NCV8403, NCV8403A

Self-Protected Low Side

Driver with Temperature
and Current Limit
42 V, 14 A, Single NChannel, SOT223
NCV8403/A is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.

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VDSS
(Clamped)

RDS(on) TYP

ID MAX
(Limited)

42 V

53 mW @ 10 V

15 A
Drain

Features

Short Circuit Protection

Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
AECQ101 Qualified and PPAP Capable
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are PbFree and are RoHS Compliant

Overvoltage
Protection

Gate
Input

ESD Protection
Temperature
Limit

Current
Sense

Source

Typical Applications

Switch a Variety of Resistive, Inductive and Capacitive Loads

Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial

Current
Limit

4
1

DRAIN
4

SOT223
CASE 318E
STYLE 3
4
1 2

MARKING
DIAGRAM

DPAK
CASE 369C

AYW
xxxxxG
G
1
2
3
SOURCE
GATE
DRAIN
YWW
xxxxxG

A
= Assembly Location
Y
= Year
W, WW = Work Week
xxxxx = V8403 or 8403A
G or G = PbFree Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.

Semiconductor Components Industries, LLC, 2011

November, 2011 Rev. 5

Publication Order Number:

NCV8403/D

NCV8403, NCV8403A
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating

Symbol

Value

Unit

DraintoSource Voltage Internally Clamped

VDSS

42

Vdc

GatetoSource Voltage

VGS

"14

Vdc

Drain Current

Continuous

ID

Total Power Dissipation

@ TA = 25C (Note 1)
@ TA = 25C (Note 2)

PD

Thermal Resistance SOT223 Version

JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Thermal Resistance DPAK Version
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)

Internally Limited
1.13
1.56

C/W

RqJC
RqJA
RqJA

12
110
80

RqJC
RqJA
RqJA

2.5
95
50

Single Pulse Inductive Load Switching Energy

(VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W)

EAS

470

mJ

Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms)

VLD

55

Operating Junction Temperature

TJ

40 to 150

Storage Temperature

Tstg

55 to 150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface mounted onto minimum pad size (0.412 square) FR4 PCB, 1 oz cu.
2. Mounted onto 1 square pad size (1.127 square) FR4 PCB, 1 oz cu.
+
ID

DRAIN
IG
+

VDS

GATE

SOURCE

VGS

Figure 1. Voltage and Current Convention

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2

NCV8403, NCV8403A
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic

Symbol

Min

Typ

Max

Unit

42
40

46
45

51
51

Vdc
Vdc

0.6
2.5

5.0

50

125

mAdc

1.0

1.7
5.0

2.2

Vdc
mV/C

53
95

68
123

63
105

76
135

0.95

1.1

OFF CHARACTERISTICS
DraintoSource Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = 40C to 150C) (Note 3)

V(BR)DSS

Zero Gate Voltage Drain Current

(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150C) (Note 3)

IDSS

Gate Input Current

(VGS = 5.0 Vdc, VDS = 0 Vdc)

IGSS

mAdc

ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)

VGS(th)

Static DraintoSource OnResistance (Note 4)

(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150C) (Note 3)

RDS(on)

Static DraintoSource OnResistance (Note 4)

(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150C) (Note 3)

RDS(on)

SourceDrain Forward On Voltage

(IS = 7.0 A, VGS = 0 V)

VSD

mW

mW

SWITCHING CHARACTERISTICS (Note 3)

TurnON Time (10% VIN to 90% ID)
TurnOFF Time (90% VIN to 10% ID)
TurnON Time (10% VIN to 90% ID)
TurnOFF Time (90% VIN to 10% ID)
SlewRate ON (20% VDS to 50% VDS)

VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W

tON

44

tOFF

84

VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W

tON

15

tOFF

116

dVDS/dtON

2.43

dVDS/dtOFF

0.83

Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W

SlewRate OFF (80% VDS to 50% VDS)

ms

V/ms

SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 5)

Current Limit

VGS = 5.0 V, VDS = 10 V

VGS = 5.0 V, TJ = 150C (Note 3)

ILIM

10
5.0

15
10

20
15

Adc

Current Limit

VGS = 10 V, VDS = 10 V
VGS = 10 V, TJ = 150C (Note 3)

ILIM

12
8.0

17
13

22
18

Adc

VGS = 5.0 Vdc (Note 3)

TLIM(off)

150

175

200

VGS = 5.0 Vdc

DTLIM(on)

15

VGS = 10 Vdc (Note 3)

TLIM(off)

150

165

185

VGS = 10 Vdc

DTLIM(on)

15

VGS = 5 V ID = 1.0 A

IGON

Temperature Limit (Turnoff)

Thermal Hysteresis
Temperature Limit (Turnoff)
Thermal Hysteresis
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current

400

VGS = 10 V ID = 1.0 A
Current Limit Gate Input Current

VGS = 5 V, VDS = 10 V

IGCL

VGS = 5 V, VDS = 10 V

mA

0.1
0.6

VGS = 10 V, VDS = 10 V
Thermal Limit Fault Gate Input Current

mA

50

IGTL

mA

0.45
1.5

VGS = 10 V, VDS = 10 V
ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 3)
ElectroStatic Discharge Capability

Human Body Model (HBM)

ESD

4000

ElectroStatic Discharge Capability

Machine Model (MM)

ESD

400

3. Not subject to production testing.

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.

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3

NCV8403, NCV8403A
TYPICAL PERFORMANCE CURVES
1000

10

TJstart = 25C
Emax (mJ)

ILmax (A)

TJstart = 25C

TJstart = 150C

10

100

100

10

100

L (mH)

L (mH)

Figure 2. Single Pulse Maximum Switchoff

Current vs. Load Inductance

Figure 3. SinglePulse Maximum Switching

Energy vs. Load Inductance

100

1000

TJstart = 25C

Emax (mJ)

ILmax (A)

TJstart = 150C

10
TJstart = 25C

TJstart = 150C

TJstart = 150C
1

10
TIME IN CLAMP (ms)

Figure 4. Single Pulse Maximum Inductive

Switchoff Current vs. Time in Clamp

Figure 5. SinglePulse Maximum Inductive

Switching Energy vs. Time in Clamp

6V

7V

8V

20

9V

40C

VDS = 10 V
10 V

20

ID (A)

TIME IN CLAMP (ms)

25

25C

15
5V
4V

15
Ta = 25C

10

100C

10

150C

3V
5

5
0

100

10

ID (A)

VGS = 2.5 V
0

1.0

1.5

2.0

2.5

3.0

3.5

VDS (V)

VGS (V)

Figure 6. Onstate Output Characteristics

Figure 7. Transfer Characteristics

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4

4.0

NCV8403, NCV8403A
TYPICAL PERFORMANCE CURVES
100

150
150C

125

80

100
100C
75
25C

70

100C, VGS = 5 V
100C, VGS = 10 V

60
25C, VGS = 5 V

50

25C, VGS = 10 V
40C, VGS = 5 V

30

40C
3

150C, VGS = 10 V

40

50
25

150C, VGS = 5 V

90

RDS(on) (mW)

RDS(on) (mW)

ID = 3 A

20

10

40C, VGS = 10 V
7
9
8
10

VGS (V)

ID (A)

Figure 8. RDS(on) vs. GateSource Voltage

Figure 9. RDS(on) vs. Drain Current

25

2.00

40C

ID = 5 A
20

1.25

VGS = 5 V

15

100C

1.00

150C
10

VGS = 10 V

0.75
0.50
40 20

VDS = 10 V
0

20

60

40

80

100

120

140

T (C)

VGS (V)

Figure 10. Normalized RDS(on) vs. Temperature

Figure 11. Current Limit vs. GateSource

Voltage

25

100
VDS = 10 V

VGS = 10 V

150C

1
IDSS (mA)

VGS = 5 V
15

0.1

100C

0.01

25C

0.001

10

10

VGS = 0 V

10

20
ILIM (A)

25C

1.50
ILIM (A)

NORMALIZED RDS(on)

1.75

40C

0.0001
5
40 20

20

40

60

80

100

120

0.00001

140

10

15

20

25

30

35

TJ (C)

VDS (V)

Figure 12. Current Limit vs. Junction

Temperature

Figure 13. DraintoSource Leakage Current

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5

40

NCV8403, NCV8403A
TYPICAL PERFORMANCE CURVES
1.0
ID = 1.2 mA
VDS = VGS

1.1

VSD (V)

1.0
0.9

0.7

0.8

25C

0.7

100C

0.6

150C

20

40

80

60

100

0.5

120 140

DRAINSOURCE VOLTAGE SLOPE (V/ms)

100

td(off)

50

tf
tr

td(on)
4

10

10

3.0
VDD = 25 V
ID = 5 A
RG = 0 W

2.5

dVDS/dt(on)

2.0
1.5
1.0

dVDS/dt(off)

0.5
0

10

Figure 16. Resistive Load Switching Time vs.

GateSource Voltage

Figure 17. Resistive Load Switching

DrainSource Voltage Slope vs. GateSource
Voltage

75
VDD = 25 V
ID = 5 A

td(off), VGS = 5 V

tf, VGS = 5 V

tf, VGS = 10 V
tr, VGS = 5 V

td(on), VGS = 5 V td(on), VGS = 10 V

VGS (V)

td(off), VGS = 10 V

VGS (V)

100

25

Figure 15. SourceDrain Diode Forward

Characteristics

150

50

Figure 14. Normalized Threshold Voltage vs.

Temperature

VDD = 25 V
ID = 5 A
RG = 0 W

IS (A)

200

T (C)

250

TIME (ms)

40C

VGS = 0 V

0.6
40 20

TIME (ms)

0.9

0.8

500

1000

tr, VGS = 10 V

1500

2000

DRAINSOURCE VOLTAGE SLOPE (V/ms)

NORMALIZED VGS(th) (V)

1.2

2.50
dVDS/dt(on), VGS = 10 V

2.25
2.00
VDD = 25 V
ID = 5 A

1.75
1.50
1.25

dVDS/dt(off), VGS = 5 V

1.00

dVDS/dt(off), VGS = 10 V

0.75
0.50

dVDS/dt(on), VGS = 5 V
0

500

1000

1500

2000

RG (W)

RG (W)

Figure 18. Resistive Load Switching Time vs.

Gate Resistance

Figure 19. DrainSource Voltage Slope during

Turn On and Turn Off vs. Gate Resistance

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6

NCV8403, NCV8403A

150

150

125

125
RqJA (C/W)

RqJA (C/W)

TYPICAL PERFORMANCE CURVES

100
PCB Cu thickness, 1.0 oz
75

100
75

PCB Cu thickness, 2.0 oz

PCB Cu thickness, 1.0 oz

50

50

25

25

PCB Cu thickness, 2.0 oz

0

100

200

300

400

500

600

700

800

100

200

300

400

500

600

700

COPPER HEAT SPREADER AREA (mm2)

COPPER HEAT SPREADER AREA (mm2)

Figure 20. RqJA vs. Copper Area SOT223

Figure 21. RqJA vs. Copper Area DPAK

800

1000

R(t) C/W

100
10
1

50% Duty Cycle

20%
10%
5%
2%
1%

0.1
0.01

Single Pulse
0.000001 0.00001

0.0001

0.001

0.01

0.1

10

100

1000

10

100

1000

PULSE TIME (sec)

Figure 22. Transient Thermal Resistance SOT223 Version

100
50% Duty Cycle

R(t) C/W

10

20%
10%
5%

2%
1%

0.1

0.01

Single Pulse
0.000001 0.00001

0.0001

0.001

0.01

0.1

PULSE TIME (sec)

Figure 23. Transient Thermal Resistance DPAK Version

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7

NCV8403, NCV8403A
TEST CIRCUITS AND WAVEFORMS

RL

VIN
+

RG

VDD

G DUT

IDS

Figure 24. Resistive Load Switching Test Circuit

90%

VIN

10%
td(ON)

tr

td(OFF)
tf

90%

10%

IDS

Figure 25. Resistive Load Switching Waveforms

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8

NCV8403, NCV8403A
TEST CIRCUITS AND WAVEFORMS

VDS
VIN
D

RG

+
VDD

G DUT

tp

IDS

Figure 26. Inductive Load Switching Test Circuit

5V

VIN

0V
Tav
Tp
V(BR)DSS
Ipk

VDD

VDS

VDS(on)
IDS

Figure 27. Inductive Load Switching Waveforms

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9

NCV8403, NCV8403A
ORDERING INFORMATION
Package

Shipping

NCV8403STT1G

SOT223
(PbFree)

1000 / Tape & Reel

NCV8403STT3G

SOT223
(PbFree)

4000 / Tape & Reel

NCV8403DTRKG

DPAK
(PbFree)

2500 / Tape & Reel

NCV8403ASTT1G

SOT223
(PbFree)

1000 / Tape & Reel

NCV8403ASTT3G

SOT223
(PbFree)

4000 / Tape & Reel

NCV8403ADTRKG

DPAK
(PbFree)

2500 / Tape & Reel

Device

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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10

NCV8403, NCV8403A
PACKAGE DIMENSIONS
SOT223 (TO261)
CASE 318E04
ISSUE N
D
b1

NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.

HE

e1

A1

A
0.08 (0003)

DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE

STYLE 3:
PIN 1.
2.
3.
4.

L1

MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0

GATE
DRAIN
SOURCE
DRAIN

SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079

2.3
0.091

2.3
0.091

6.3
0.248

2.0
0.079
1.5
0.059

SCALE 6:1

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11

MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05

1.75
2.00
7.00
7.30
10

mm
inches

MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0

INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037

0.069
0.276

MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041

0.078
0.287
10

NCV8403, NCV8403A
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE D

E
b3

c2

D
1

L4

L3

b2
e

NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.

DETAIL A

b
0.005 (0.13)

C
L2

GAUGE
PLANE

C
L

SEATING
PLANE

A1

L1
DETAIL A

ROTATED 905 CW

DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z

INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
0.040
0.155

MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27

1.01
3.93

SOLDERING FOOTPRINT*
6.20
0.244

2.58
0.102

5.80
0.228

3.00
0.118

1.60
0.063

6.17
0.243

SCALE 3:1

mm
inches

*For additional information on our PbFree strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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For additional information, please contact your local
Sales Representative

NCV8403/D