PBYR2545CT/CTB/CTE

Schottky barrier rectifier diodes

Rev. 05 20 January 2003

Product data

1. Product profile
1.1 Description
Dual, common cathode schottky rectifier diodes in two conventional leaded plastic
packages and one surface mount plastic package.
Product availability:
PBYR2545CT in SOT78 (TO-220AB)
PBYR2545CTB in SOT404 (D2-PAK)
PBYR2545CTE in SOT226 (I2-PAK).

1.2 Features
Low forward volt drop
Reverse surge capability

Fast switching
High thermal cycling performance

1.3 Applications
Switched mode power supplies

Low loss rectification

1.4 Quick reference data

VRRM 45 V
IF(AV) 30 A

VF 0.62 V
Tj(max) 150 C

2. Pinning information
Table 1:

Pinning - SOT78, SOT404, SOT226 simplified outline and symbol

Pin

Description

anode 1

cathode

anode 2

mb

cathode

Simplified outline
[1]

Symbol

mb
mb

mb

2
MBK106

MBK116

1 2 3

SOT78 (TO-220AB)
[1]

SOT404 (D2-PAK)

It is not possible to make connection to pin 2 of the SOT404 package.

1 2 3

MBK112

SOT226 (I2-PAK)

MBL871

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse voltage

45

VRWM

working peak reverse voltage

45

45

30

VR

continuous reverse voltage

Tmb 113 C

IF(AV)

average rectified forward current

both diodes conducting;

square wave; = 0.5; Tmb 126 C

Tstg

storage temperature

65

+175

Tj

junction temperature

150

[1]

Per diode

IFRM

repetitive peak forward current

square wave; = 0.5; Tmb 126 C

30

IFSM

non-repetitive peak forward current

tp = 10 ms
tp = 8.3 ms;
sinusoidal; Tj = 125 C prior to surge;
with reapplied VRRM(max)

180

200

pulse width and repetition rate

limited by Tj(max)

IRRM

[1]

repetitive peak reverse surge current

For output currents greater than 20A, the cathode connection should be made to the metal mounting tab.

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

2 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

003aaa210

15
PF
(W)

127.5

=1

Vo = 0.34 V
Rs = 0.014

Tmb (C)
(max)

0.5

PF
(W)

135

142.5

150

132

a = 1.57

Vo = 0.34 V
Rs = 0.014

1.9

Tmb (C)

2.2

(max)

2.8

0.2

10

003aaa211

12

4
138

0.1

P
5

tp
T

tp

144

t
T

0
0

10

20

IF(AV) (A)

30

Square current waveform

150
0

IF(AV) (A)

15

Sinusoidal current waveform

I F ( RMS )
a = -----------------I F ( AV )

I F ( AV ) = I F ( RMS )
Fig 1. Maximum forward power dissipation (square
current waveform) as a function of average
forward current (per diode).

Fig 2. Maximum forward power dissipation

(sinusoidal current waveform) as a function of
average forward current (per diode).

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

10

Rev. 05 20 January 2003

3 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

4. Thermal characteristics
Table 3:

Thermal characteristics

Symbol Parameter
Rth(j-mb)

Rth(j-a)

Conditions

Min Typ Max Unit

per diode; Figure 3

1.5

K/W

both diodes

K/W

SOT78 and SOT226

vertical in still air

60

K/W

SOT404

minimum footprint; mounted on an

FR4 printed-circuit board

50

K/W

thermal resistance from junction to mounting base

thermal resistance from junction to ambient

4.1 Transient thermal impedance

003aaa215

10
Zth(j-mb)
(K/W)

10-1

10-2
10-6

10-5

10-4

10-3

10-2

10-1

10
tp (s)

Fig 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse duration.

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

4 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

5. Characteristics
Table 4: Characteristics
Tj = 25 C unless otherwise specified.
Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 30 A; Tj = 125 C; Figure 4

0.72

0.76

Static characteristics per diode

VF

IR
Cd

forward voltage

reverse current
diode capacitance

IF = 20 A; Tj = 125 C

0.58

0.62

IF = 30 A

0.72

0.82

VR = VRRM; Figure 5

0.3

mA

VR = VRRM; Tj = 100 C

30

40

mA

f = 1 MHz; VR = 5 V; Figure 6
Tj = 25 C to 125 C

530

pF

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

5 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

003aaa212

50

Tj = 25 C
Tj = 125 C

IF
(A)

003aaa213

102

Tj =

IR
(mA)

40

125 C

10
100 C
30

75 C
1
typ

20

50 C
10-1

max
10

25 C
10-2
0

0.4

0.8

1.2

10

20

VF (V)

Fig 4. Forward current as a function of forward

voltage; typical values.

30

40
50
VR (V)

Fig 5. Reverse current as a function of reverse

voltage per diode; typical values.

003aaa214

104
Cd
(pF)

103

102

10

VR (V)

102

f = 1MHz

Fig 6. Diode capacitance as a function of reverse voltage per diode; typical values.

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

6 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

A
A1

mounting
base

D1

L2

L1(1)

Q
b1

3
b

10 mm

scale
DIMENSIONS (mm are the original dimensions)
UNIT

A1

b1

D1

L1(1)

L2
max.

mm

4.5
4.1

1.39
1.27

0.9
0.7

1.3
1.0

0.7
0.4

15.8
15.2

6.4
5.9

10.3
9.7

2.54

15.0
13.5

3.30
2.79

3.0

3.8
3.6

3.0
2.7

2.6
2.2

Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION

REFERENCES
IEC

SOT78

JEDEC

EIAJ

3-lead TO-220AB

SC-46

EUROPEAN
PROJECTION

ISSUE DATE
00-09-07
01-02-16

Fig 7. SOT78 (TO-220AB).

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

7 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads

(one lead cropped)

SOT404

A
A1

mounting
base

D1

HD

2
Lp

3
c

b
e

2.5

5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A1

D
max.

D1

Lp

HD

mm

4.50
4.10

1.40
1.27

0.85
0.60

0.64
0.46

11

1.60
1.20

10.30
9.70

2.54

2.90
2.10

15.80
14.80

2.60
2.20

OUTLINE
VERSION

REFERENCES
IEC

JEDEC

EIAJ

EUROPEAN
PROJECTION

ISSUE DATE
99-06-25
01-02-12

SOT404

Fig 8. SOT404 (D2-PAK).

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

8 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

Plastic single-ended package; low-profile 3 lead TO-220AB

SOT226

A
A1

D1

mounting
base
D

L1

L2

Q
b1

3
b

10 mm

scale
DIMENSIONS (mm are the original dimensions)
(1)

UNIT

A1

b1

D1

L1

L2
max

mm

4.5
4.1

1.40
1.27

0.9
0.7

1.3
1.0

0.7
0.4

9.65
8.65

1.5
1.1

10.3
9.7

2.54

15.0
13.5

3.30
2.79

3.0

2.6
2.2

Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT226

REFERENCES
IEC

JEDEC

EIAJ

low-profile
3-lead TO-220AB

EUROPEAN
PROJECTION

ISSUE DATE
99-05-27
99-09-13

Fig 9. SOT226 (I2-PAK).

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

9 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

7. Soldering
10.85
10.60
10.50

handbook, full pagewidth

1.50
7.50
7.40
1.70

2.25 2.15

8.15

8.275

8.35

1.50

4.60

0.30
4.85

5.40

7.95

8.075

3.00

0.20

1.20
1.30
1.55

solder lands
solder resist

5.08

MSD057

occupied area
solder paste

Dimensions in mm.

Fig 10. Reflow soldering footprint for SOT404.

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

10 of 13

Philips Semiconductors

PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes

8. Revision history
Table 5:

Revision history

Rev Date
05

20030120

CPCN

Description

Product data (9397 750 10926) supersedes Product specification

PBYR2545CT_CTB_SERIES revision 04 of 1998 Oct 01

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Product data

Rev. 05 20 January 2003

11 of 13

PBYR2545CT/CTB/CTE

Philips Semiconductors

Schottky barrier rectifier diodes

9. Data sheet status

Level

Data sheet status[1]

Product status[2][3]

Definition

Objective data

Development

This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.

II

Preliminary data

Qualification

This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

[1]

Please consult the most recently issued data sheet before initiating or completing a design.

[2]

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

10. Definitions

11. Disclaimers

Short-form specification The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Life support These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Limiting values definition Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

Right to make changes Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status Production),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.

Product data

Fax: +31 40 27 24825

Koninklijke Philips Electronics N.V. 2003. All rights reserved.

9397 750 10926

Rev. 05 20 January 2003

12 of 13

Philips Semiconductors

PBYR2545CT/CTB/CTE
Schottky barrier rectifier diodes

Contents
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
11

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Koninklijke Philips Electronics N.V. 2003.

Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 20 January 2003

Document order number: 9397 750 10926

This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.