FDS6982AS

tmM

Dual Notebook Power Supply N-Channel PowerTrench SyncFET

General Description

Features

The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous
DC:DC power supplies that provide various peripheral
voltages for notebook computers and other battery
powered electronic devices. FDS6982AS contains two
unique 30V, N-channel, logic level, PowerTrench
MOSFETs designed to maximize power conversion
efficiency. The high-side switch (Q1) is designed with
specific emphasis on reducing switching losses while
the low-side switch (Q2) is optimized to reduce
conduction losses. Q2 also includes an integrated
Schottky diode using Fairchilds monolithic SyncFET
technology.

Applications

Q2:

Optimized to minimize conduction losses

Includes SyncFET Schottky body diode

8.6A, 30V

RDS(on) max= 13.5m @ VGS = 10V

RDS(on) max= 16.5m @ VGS = 4.5V

Low gate charge (21nC typical)

Q1:

Optimized for low switching losses

6.3A, 30V

RDS(on) max= 28.0m @ VGS = 10V

RDS(on) max= 35.0m @ VGS = 4.5V

Low gate charge (11nC typical)

Notebook

D1
D1

D2

Q1

D2

3
2

SO-8
S2

G2

S1

G1

Absolute Maximum Ratings

Symbol

Drain-Source Voltage
Gate-Source Voltage

ID

Drain Current

PD

- Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation

Q2

(Note 1a)

(Note 1a)
(Note 1b)
(Note 1c)

TJ, TSTG

TA = 25C unless otherwise noted

Parameter

VDSS
VGSS

Q2

Operating and Storage Junction Temperature Range

Q1

Units

30

30

20
8.6
30

20
6.3
20

V
V

2
1.6

A
W

1
0.9
55 to +150

78
40

C/W
C/W

Thermal Characteristics
RJA
RJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

Package Marking and Ordering Information

Device Marking
FDS6982AS

2008 Fairchild Semiconductor Corporation

Device
FDS6982AS

Reel Size
13

Tape width
12mm

Quantity
2500 units

FDS6982AS Rev B1

FDS6982AS

May 2008

TA = 25C unless otherwise noted

Symbol

Test Conditions

Parameter

Type Min Typ Max Units

Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS

Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage

On Characteristics

VGS = 0 V,
ID = 1 mA
ID = 250 uA
VGS = 0 V,
ID = 1 mA, Referenced to 25C
ID = 250 A, Referenced to 25C
VDS = 24 V,
VGS = 0 V
VGS = 20 V,

VDS = 0 V

VDS = VGS,
VDS = VGS,

ID = 1 mA
ID = 250 A

Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1

30
30

Q2
Q1

1
1

V
28
24

mV/C
500
1
100

3
3

nA

(Note 2)

VGS(th)

Gate Threshold Voltage

VGS(th)
TJ

Gate Threshold Voltage

Temperature Coefficient

RDS(on)

Static Drain-Source
On-Resistance

Q2

3.1

ID = 250 uA, Referenced to 25C

Q1

4.3

VGS = 10 V, ID = 8.6 A
VGS = 10 V, ID = 8.6 A, TJ = 125C
VGS = 4.5 V, ID = 7.5 A
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 6.3 A, TJ = 125C
VGS = 4.5 V, ID = 5.6 A
VGS = 10 V,
VDS = 5 V

Q2

11
16
13
20
26
25

ID = 1 mA, Referenced to 25C

ID(on)

On-State Drain Current

gFS

Forward Transconductance

1.4
1.9

VDS = 5 V,
VDS = 5 V,

ID = 8.6 A
ID = 6.3 A

VDS = 10 V,
f = 1.0 MHz

VGS = 0 V,

Q1
Q2
Q1
Q2
Q1

30
20

mV/C
13.5
20.0
16.5
28
33
35

32
19

Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1

1250
610
410
180
130
85
1.4
2.2

pF

Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1

9
10
6
7
27
24
11
3
12
12
13
14
19
15
10
5

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

VGS = 15mV,

f = 1.0 MHz

pF
pF

(Note 2)

VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6

VDD = 15 V, ID = 1 A,
VGS = 4.5V, RGEN = 6

18
20
12
14
44
39
20
6
22
22
23
25
34
27
20
10

ns
ns
ns
ns
ns
ns
ns
ns

FDS6982AS Rev B1

FDS6982AS

Electrical Characteristics

Symbol

Parameter

Switching Characteristics
Qg(TOT)
Qg
Qgs
Qgd

TA = 25C unless otherwise noted

(continued)

Test Conditions

Type Min

Typ Max Units

(Note 2)

Total Gate Charge at Vgs=10V

Total Gate Charge at Vgs=5V

Q2:
VDS = 15 V, ID = 11.5A
Q1:
VDS = 15 V, ID = 6.3A

Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1

GateSource Charge
GateDrain Charge

21
11
12
6
3.1
1.8
3.6
2.4

30
15
16
9

nC
nC
nC
nC

DrainSource Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

Trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VSD

Drain-Source Diode Forward

Voltage

IF = 11.5 A,
diF/dt = 300 A/s

Q2
Q1
Q2

(Note 3)

IF = 6.3 A,
diF/dt = 100 A/s

(Note 2)
(Note 2)
(Note 2)

19

ns

12

nC
ns

Q1

20

Q2
Q2
Q1

9
0.5
0.6
0.8

(Note 3)

VGS = 0 V, IS = 3 A
VGS = 0 V, IS = 6 A
VGS = 0 V, IS = 1.3 A

3.0
1.3

nC
0.7
1.0
1.2

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a)

78C/W when
mounted on a
2
0.5in pad of 2
oz copper

b)

125C/W when
mounted on a
0.02 in2 pad of
2 oz copper

c)

135C/W when
mounted on a
minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
3. See SyncFET Schottky body diode characteristics below.
4
5

FDS6982AS Rev B1

FDS6982AS

Electrical Characteristics

FDS6982AS

Typical Characteristics: Q2

30

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

2.6

3.0V

VGS = 10V

3.5V

4.5V

20

10

2.5V

2.2
2
1.8
1.6

3.5V

4.0V

1.2

4.5V

0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

6.0V

10V

10
20
ID, DRAIN CURRENT (A)

30

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

0.05
ID = 8.6A
VGS = 10V

ID = 4.3 A
RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

3.0V

1.4

0.8

1.2

0.8

0.6
-50

-25

0
25
50
75
o
TJ, JUNCTION TEMPERATURE ( C)

100

0.04

0.03
o

TA = 125 C
0.02

TA = 25 C

0.01

125

Figure 3. On-Resistance Variation with

Temperature.

4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.
10

30

VGS = 0V

IS, REVERSE DRAIN CURRENT (A)

VDS = 5V
25
ID, DRAIN CURRENT (A)

VGS = 2.5V

2.4

20
15

TA = 125 C
-55oC

10
5

25oC

0
1

1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

3.5

TA = 125 C
o

25 C
-55oC

0.1

0.01
0

0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)

0.8

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6982AS Rev B1

FDS6982AS

Typical Characteristics: Q2

2000

1600

VDS = 10V
20V

6
15V

1200

Ciss

800
Coss

400

Crss
0

10
15
Qg, GATE CHARGE (nC)

20

25

Figure 7. Gate Charge Characteristics.

10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)

30

Figure 8. Capacitance Characteristics.

100
P(pk), PEAK TRANSIENT POWER (W)

50
RDS(ON) LIMIT

100s
1ms
10ms

10

100ms
1s
10s

1
DC
VGS = 10V
SINGLE PULSE
RJA = 135oC/W

0.1

TA = 25 C

0.1

1
10
VDS, DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE
RJA = 135C/W
TA = 25C

40

30

20

10

0
0.001

0.01
100

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

ID, DRAIN CURRENT (A)

f = 1MHz
VGS = 0 V

ID = 8.6A

CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

10

0.01

0.1

1
t1, TIME (sec)

10

100

1000

Figure 10. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) * RJA

RJA = 135C/W

0.2

0.1

0.1
0.05

P(pk)

0.02

0.01

t1

0.01
SINGLE PULSE

0.001
0.0001

0.001

t2

TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6982AS Rev B1

FDS6982AS

Typical Characteristics Q1

VGS = 10V

4.0V

2.6

3.5V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

ID, DRAIN CURRENT (A)

20

16
6.0V

12

4.5V

8
3.0V

1
VDS, DRAIN-SOURCE VOLTAGE (V)

1.8
3.5V

1.4

4.0V
4.5V
6.0V

Figure 12. On-Region Characteristics.

1.6

10V

10
ID, DRAIN CURRENT (A)

15

20

Figure 13. On-Resistance Variation with

Drain Current and Gate Voltage.
0.1

ID = 6.3A
VGS = 10V

ID = 3.15 A
RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

2.2

0.6

1.4

1.2

0.8

0.08

0.06
o

TA = 125 C

0.04

0.02

TA = 25oC

0.6
-50

-25

0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)

125

150

Figure 14. On-Resistance Variation with

Temperature.

4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 15. On-Resistance Variation with

Gate-to-Source Voltage.
100

20

IS, REVERSE DRAIN CURRENT (A)

VDS = 5V

ID, DRAIN CURRENT (A)

VGS = 3.0V

15

10

TA = 125 C
o

-55 C

5
25oC

VGS = 0V

10
o

TA = 125 C

25oC

0.1

-55 C

0.01
0.001

0.0001

0
1

1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)

Figure 16. Transfer Characteristics.

3.5

0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)

1.4

Figure 17. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS6982AS Rev B1

FDS6982AS

Typical Characteristics Q1

800
f = 1MHz
VGS = 0 V

ID = 6.3A
8
CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

10

VDS = 10V
6

20V
15V

600
Ciss
400
Coss
200

2
Crss
0

0
0

6
Qg, GATE CHARGE (nC)

12

Figure 18. Gate Charge Characteristics.

10

15

20

Figure 19. Capacitance Characteristics.

100
P(pk), PEAK TRANSIENT POWER (W)

50
RDS(ON) LIMIT

100s

10

1ms
10ms
100ms
1s
10s

1
DC

VGS = 10V
SINGLE PULSE
o
RJA = 135 C/W

0.1

TA = 25oC

0.01
0.1

10

100

SINGLE PULSE
RJA = 135C/W
TA = 25C

40

30

20

10

0
0.001

0.01

0.1

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 20. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

1
t1, TIME (sec)

10

100

1000

Figure 21. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) * RJA

RJA = 135C/W

0.2

0.1

0.1
0.05

P(pk)

0.02

0.01

0.001
0.0001

t1

0.01
SINGLE PULSE

0.001

t2

TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 22. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6982AS Rev B1

FDS6982AS

Typical Characteristics (continued)

SyncFET Schottky Body Diode

Characteristics
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
IDSS, REVERSE LEAKAGE CURRENT (A)

Current: 1.6A/DIV

Fairchilds SyncFET process embeds a Schottky diode

in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 23
shows the reverse recovery characteristic of the
FDS6982AS.

TA = 125oC

0.01

0.001
TA = 100oC

0.0001

0.00001

TA = 25oC

0.000001
0

10
15
20
VDS, REVERSE VOLTAGE (V)

25

30

Figure 25. SyncFET body diode reverse

leakage versus drain-source voltage and
temperature
Time: 10nS/DIV

Figure 23. FDS6982AS SyncFET body

diode reverse recovery characteristic.

Current: 1.6A/DIV

For comparison purposes, Figure 24 shows the reverse

recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6982).

Time: 10nS/DIV

Figure 24. Non-SyncFET (FDS6982) body

diode reverse recovery characteristic.

FDS6982AS Rev B1

FDS6982AS

Typical Characteristics

VDS

tP

VGS

RGE

DUT

VGS

0V
tp

vary tP to obtain
required peak IAS

BVDSS
VDS

IAS

VDD

VDD

IAS
0.01
tAV

Figure 26. Unclamped Inductive Load Test

Circuit

Figure 27. Unclamped Inductive

Waveforms

Drain Current
Same type as

50k

10V

10F

1F

+
VDD

VGS

QG(TOT)
10V

DUT

QGD

QGS

VGS

Ig(REF
Charge, (nC)
Figure 28. Gate Charge Test Circuit

Figure 29. Gate Charge Waveform

tON

VDS
VGS
RGEN

td(ON)

RL

VDS
+
VDD

DUT

VGSPulse Width 1s

Duty Cycle 0.1%

Figure 30. Switching Time Test

Circuit

10%

0V

90%

10%
90%

VGS
0V

tr

90%

tOFF
td(OFF
tf
)

50%
10%

50%

Pulse Width

Figure 31. Switching Time Waveforms

FDS6982AS Rev B1

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
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* EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.

Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.

2.

A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve the design.

Obsolete

Not In Production

This datasheet contains specifications on a product that is discontinued by

Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34

FDS6982AS Rev.B1