IPD640N06L G

OptiMOS Power-Transistor

Product Summary

Features
For fast switching converters and sync. rectification
N-channel enhancement - logic level

V DS

60

R DS(on),max

64

ID

18

175 C operating temperature

Avalanche rated
Pb-free lead plating, RoHS compliant

Type

IPD640N06L G

Type
Package

PG-TO252-3

IPD640N06L
G
Marking

640N06L
PG-TO252-3

Maximum ratings, at T j=25 C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

ID

Value

T C=25 C

18

T C=100 C

12

Unit
A

Pulsed drain current

I D,pulse

T C=25 C1)

72

Avalanche energy, single pulse

E AS

I D=18 A, R GS=25

43

mJ

Reverse diode dv /dt

dv /dt

I D=18 A, V DS=20 V,
di /dt =200 A/s,
T j,max=175 C

kV/s

Gate source voltage

V GS

Power dissipation

P tot

Operating and storage temperature

T j, T stg

T C=25 C

IEC climatic category; DIN IEC 68-1

1)

Rev. 1.2

20

47

-55 ... 175

55/175/56

See figure 3

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IPD640N06L G
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

3.2

minimal footprint

75

6 cm2 cooling area2)

50

60

Thermal characteristics
Thermal resistance, junction - case

R thJC

SMD version, device on PCB

R thJA

K/W

Electrical characteristics, at T j=25 C, unless otherwise specified

Static characteristics
Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

Gate threshold voltage

V GS(th)

V DS=V GS, I D=16 A

1.2

1.6

Zero gate voltage drain current

I DSS

V DS=60 V, V GS=0 V,
T j=25 C

0.01

V DS=60 V, V GS=0 V,
T j=125 C

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

10

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=18 A

47

64

V GS=4.5 V, I D=12 A

64

85

1.2

9.5

19

Gate resistance

RG

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=18 A

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.

Rev. 1.2

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IPD640N06L G
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

350

470

94

130

Dynamic characteristics
Input capacitance

C iss

Output capacitance

C oss

Reverse transfer capacitance

C rss

35

53

Turn-on delay time

t d(on)

Rise time

tr

25

38

Turn-off delay time

t d(off)

32

48

Fall time

tf

32

48

Gate to source charge

Q gs

1.4

1.9

Gate charge at threshold

Q g(th)

0.5

0.7

Gate to drain charge

Q gd

3.6

5.4

Switching charge

Q sw

4.5

6.5

Gate charge total

Qg

10

13

Gate plateau voltage

V plateau

4.2

Output charge

Q oss

18

72

0.99

1.3

30

45

ns

20

30

nC

V GS=0 V, V DS=30 V,
f =1 MHz

V DD=30 V, V GS=10 V,
I D=15 A, R G=22

pF

ns

Gate Charge Characteristics 3)

V DD=30 V, I D=18 A,
V GS=0 to 10 V

V DD=30 V, V GS=0 V

nC

Reverse Diode
Diode continous forward current

IS

Diode pulse current

I S,pulse

Diode forward voltage

V SD

Reverse recovery time

t rr

T C=25 C
V GS=0 V, I F=18 A,
T j=25 C

V R=30 V, I F=I S,
di F/dt =100 A/s
Reverse recovery charge

3)

Rev. 1.2

Q rr

See figure 16 for gate charge parameter definition

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IPD640N06L G
1 Power dissipation

2 Drain current

P tot=f(T C); V GS6 V

I D=f(T C); V GS10 V

50

20

40
15

I D [A]

P tot [W]

30
10

20

5
10

0
0

50

100

150

200

50

100

T C [C]

150

200

T C [C]

3 Safe operating area

4 Max. transient thermal impedance

I D=f(V DS); T C=25 C; D =0

Z thJC=f(t p)

parameter: t p

parameter: D =t p/T

102

101

1 s

10 s

limited by on-state
resistance

100 s
0.5

100

1 ms

I D [A]

DC

Z thJC [K/W]

101

10 ms

0.2

0.1
0.05
0.02

100

10-1
0.01
single pulse

10-1
10

10-2
-1

10

10

10

V DS [V]

Rev. 1.2

10-6

10-5

10-4

10-3

10-2

10-1

100

t p [s]

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IPD640N06L G
5 Typ. output characteristics

6 Typ. drain-source on resistance

I D=f(V DS); T j=25 C

R DS(on)=f(I D); T j=25 C

parameter: V GS

parameter: V GS
120

30

4V

3.5 V

5V

10 V

5.5 V

100
4.5 V

4.5 V

80

R DS(on) [m]

I D [A]

20

4V

5V

60

5.5 V
10 V

40

10
3.5 V

20
3V

0
0

10

V DS [V]

20

30

I D [A]

7 Typ. transfer characteristics

8 Typ. forward transconductance

I D=f(V GS); |V DS|>2|I D|R DS(on)max

g fs=f(I D); T j=25 C

parameter: T j
30

25

25
20
25 C

20

g fs [S]

I D [A]

15
175 C

15

10
10

0
0

Rev. 1.2

10

15

20

I D [A]

V GS [V]

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IPD640N06L G
9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=18 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS

parameter: I D

160

2.5

140
2
120

80

V GS(th) [V]

R DS(on) [m]

160 A

100

98 %

60

1.5
16 A

typ

40
0.5
20

0
-60

-20

20

60

100

140

180

-60

-20

20

60

100

140

180

T j [C]

T j [C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)
parameter: T j
102

1000

25 C 98%
175 C 98%
25 C

Ciss
175 C

I F [A]

C [pF]

10

Coss

100

100
Crss

10-1

10
0

10

15

20

25

30

Rev. 1.2

V SD [V]

V DS [V]

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IPD640N06L G
13 Avalanche characteristics

14 Typ. gate charge

I AS=f(t AV); R GS=25

V GS=f(Q gate); I D=18 A pulsed

parameter: T j(start)

parameter: V DD

100

12
30 V

10

12V

48 V

10

V GS [V]

I AV [A]

25 C

100 C

4
150 C

0
1

10

100

1000

10

12

Q gate [nC]

t AV [s]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

75

V GS
Qg

V BR(DSS) [V]

70

65

V g s(th)

60

55

Q g(th)

Q sw
Q gs

50
-60

-20

20

60

100

140

Q g ate

Q gd

180

T j [C]

Rev. 1.2

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IPD640N06L G
PG-TO252-3: Outline

packaging:

Rev. 1.2

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IPD640N06L G

Published by
Infineon Technologies AG
81726 Mnchen, Germany
Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (Beschaffenheitsgarantie). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.

Rev. 1.2

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2006-03-27