2N4401 / MMBT4401

2N4401

MMBT4401
C

E
C

TO-92

SOT-23

Mark: 2X

NPN General Pupose Amplifier

This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA.

Absolute Maximum Ratings*

Symbol

TA = 25C unless otherwise noted

Parameter

Value

Units

VCEO

Collector-Emitter Voltage

40

VCBO

Collector-Base Voltage

60

VEBO

Emitter-Base Voltage

6.0

IC

Collector Current - Continuous

600

mA

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD

TA = 25C unless otherwise noted

Characteristic

RJC

Total Device Dissipation

Derate above 25C
Thermal Resistance, Junction to Case

RJA

Thermal Resistance, Junction to Ambient

Max

Units

2N4401
625
5.0
83.3

*MMBT4401
350
2.8

200

357

mW
mW/C
C/W
C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation

2N4401/MMBT4401, Rev A

(continued)

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage*

IC = 1.0 mA, IB = 0

40

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 0.1 mA, IE = 0

60

V
V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 0.1 mA, IC = 0

6.0

IBL

Base Cutoff Current

VCE = 35 V, VEB = 0.4 V

0.1

ICEX

Collector Cutoff Current

VCE = 35 V, VEB = 0.4 V

0.1

2N4401 / MMBT4401

NPN General Purpose Amplifier

ON CHARACTERISTICS*
hFE

DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

Base-Emitter Saturation Voltage

IC = 0.1 mA, VCE = 1.0 V

IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 150 mA, VCE = 1.0 V
IC = 500 mA, VCE = 2.0 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA

20
40
80
100
40

0.75

300
0.4
0.75
0.95
1.2

V
V
V
V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

Ccb

Collector-Base Capacitance

Ceb

Emitter-Base Capacitance

hie

Input Impedance

hre

Voltage Feedback Ratio

hfe

Small-Signal Current Gain

hoe

Output Admittance

IC = 20 mA, VCE = 10 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 140 kHz
VBE = 0.5 V, IC = 0,
f = 140 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz

250

MHz
6.5

pF

30

pF

1.0

15

0.1

8.0

x 10

40

500

1.0

30

mhos

15

ns
ns

-4

SWITCHING CHARACTERISTICS
td

Delay Time

VCC = 30 V, VEB = 2 V,

tr

Rise Time

IC = 150 mA, IB1 = 15 mA

20

ts

Storage Time

VCC = 30 V, IC = 150 mA

225

ns

tf

Fall Time

IB1 = IB2 = 15 mA

30

ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

(continued)

V CE = 5V

400
125 C

300
200

25 C

100
- 40 C

0
0.1

0.3

1
3
10
30
100
I C - COLLECTOR CURRENT (mA)

300

Base-Emitter Saturation
Voltage vs Collector Current
= 10

- 40 C

0.8

25 C
125 C

0.6

0.4
1
I

10
100
- COLLECTOR CURRENT (mA)

500

V CESAT - COLLECTOR-EMITTER VOLTAGE (V)

500

V BE(ON) - BASE-EMITTER ON VOLTAGE (V)

Typical Pulsed Current Gain

vs Collector Current

V BESAT - BASE-EMITTER VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Typical Characteristics

0.4
= 10
0.3

125 C

0.2
25 C

0.1
- 40 C

10
100
I C - COLLECTOR CURRENT (mA)

500

Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8

- 40 C
25 C

0.6
125 C

0.4

0.2
0.1

1
10
I C - COLLECTOR CURRENT (mA)

25

Emitter Transition and Output

Capacitance vs Reverse Bias Voltage

Collector-Cutoff Current
vs Ambient Temperature
500
100

CB

20

= 40V

CAPACITANCE (pF)

I CBO - COLLECTOR CURRENT (nA)

Collector-Emitter Saturation
Voltage vs Collector Current

10
1
0.1

f = 1 MHz

16
12
C
te

8
C ob

4
25

50
75
100
125
T A - AMBIENT TEMPERATURE ( C)

150

0.1

1
10
REVERSE BIAS VOLTAGE (V)

100

2N4401 / MMBT4401

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Turn On and Turn Off Times

vs Collector Current
400
I B1 = I B2 =

Switching Times
vs Collector Current
400

Ic

320
TIME (nS)

V cc = 25 V

240
160

240
ts

160

tr

t off

80

tf

80

t on

td

100
I C - COLLECTOR CURRENT (mA)

0
10

1000

100
I C - COLLECTOR CURRENT (mA)

Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)

TIME (nS)

10

320
V cc = 25 V

0
10

Ic

I B1 = I B2 =

10

SOT-223

0.75

TO-92

0.5
SOT-23

0.25

25

50
75
100
o
TEMPERATURE ( C)

125

150

1000

2N4401 / MMBT4401

NPN General Purpose Amplifier

(continued)

V CE = 10 V
T A = 25oC

6
hoe
4
h re
2
h fe
h ie
0

10

20
30
40
50
I C - COLLECTOR CURRENT (mA)

60

CHAR. RELATIVE TO VALUES AT TA = 25oC

Common Emitter Characteristics

8

CHAR. RELATIVE TO VALUES AT VCE = 10V

CHAR. RELATIVE TO VALUES AT I C= 10mA

Typical Common Emitter Characteristics

(f = 1.0kHz)

Common Emitter Characteristics

2.4

V CE = 10 V
I C = 10 mA

h re

h fe

1.6

hoe

1.2
0.8
0.4
0

20
40
60
80
T A - AMBIENT TEMPERATURE ( o C)

Common Emitter Characteristics

1.3

I C = 10 mA
T A = 25oC

1.25

h fe

1.2
1.15
h ie

1.1
1.05
1

h re

0.95
0.9
0.85

hoe

0.8
0.75

h ie

10
15
20
25
30
VCE - COLLECTOR VOLTAGE (V)

35

100

2N4401 / MMBT4401

NPN General Purpose Amplifier

(continued)

Test Circuits
30 V

200

16 V

1.0 K
0
200ns

500

FIGURE 1: Saturated Turn-On Switching Timer

6.0 V

- 1.5 V

NOTE: BV EBO = 5.0 V

1k

30 V

1.0 K
0
200ns

50

FIGURE 2: Saturated Turn-Off Switching Time

37

2N4401 / MMBT4401

NPN General Purpose Amplifier

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G