X-ray Diffraction Measurement of Residual Stress in Epitaxial ZnO - α-Al2O3 Thin Film

10/08/2015
XraydiffractionmeasurementofresidualstressinepitaxialZnO/Al2O3thinfilm
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MechanicsResearchCommunications
Volume38,Issue3,April2011,Pages186191
Xraydiffractionmeasurementofresidualstressinepitaxial
ZnO/Al2O3thinfilm
FaridTakalia,AnouarNjehb,
,HartmutFuessc,MohamedHdiBenGhozlena
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doi:10.1016/j.mechrescom.2011.02.008
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Abstract
Piezoelectricthinfilmsonhighacousticvelocitynonpiezoelectricsubstrates,suchas
ZnOandAlN,depositedondiamondorsapphiresubstrates,areattractiveforhigh
frequencyandlowlosssurfaceacousticwavedevices.
Inthiswork,ZnOfilmswereepitaxialygrownonRAl2O3andCAl2O3substratesusing
plasmaassistedmolecularbeamepitaxy(MBE).ThesurfaceroughnessoftheZnO
layersisabout0.2nmfora2m2mAFMscanarea.Theabsoluteepitaxial
relationshipsbetweenZnOfilmsandplanesapphireareinvestigatedbyXray
diffractiontechniques.TheresultingrelationshipsforZnOfilmsonRAl2O3andCAl2O3
substratesarefoundtobe
and
,respectively.Ananalyticaltechniqueto
determineresidualstraininepitaxialZnOfilmsbyXraydiffraction(XRD)wasstudied.
BasedonpiezoelectricconstitutiveequationsandBragglaw,weappliedanextended
model,inwhichtheelastic,piezoelectricanddielectricconstantsareintroduced,to
evaluatetheresidualstressinthesefilms.
Keywords
MBEEpitaxialthinfilmXraydiffractionResidualStressZnO
1.Introduction
Highfrequencysurfaceacousticwave(SAW)devicesusinghighorderwavemodesin
layeredstructureshaveimportantapplicationsintelecommunicationssystems.High
frequency,attenuationortransmissionlossSAWdevicescanbeachievedbydepositing
piezoelectricfilmsonhighacousticvelocitysubstrates.
ZnO,asmultifunctionalmaterialhasbeenintensivelyinvestigatedformanyyearsin
applicationssuchassurfaceacousticwave(SAW)andbulkacousticwave(BAW)
devicesand,astransparentelectrodesinsolarcellsanddisplays.Recently,therehas
beenincreasedresearchinterestinhighqualityZnOfilms.Ithasbeenreportedthatthe
performanceofZnOacoustoelectricdevicesandthepropagationofguidedoptical
wavesinZnOcriticallydependonthemicrostructureofthefilms(Hickernell,1985).Low
losshighfrequencySAWdeviceshavebeenfabricatedusingepitaxialZnOthinfilms
(Emanetogluetal.,1997).ZnOhasbeendepositedonvarioussubstratestructures,such
asSiorSiO2/Si(Wangetal.,1983),GaAs(Shojietal.,2001),InP(Changetal.,1995),
sapphiresubstrates(Koikeetal.,1995andEmanetogluetal.,2001),diamondthinfilms
onSiC(Didenkoetal.,2000).Amongthem,Al2O3hasalowacousticattenuationloss
andahighacousticvelocity.Al2O3isalsoattractiveforintegrationwithSielectronics,as
itiscommonlyusedasasubstrateforsemiconductoroninsulator(SOI)technologies.
Manydepositionandgrowthtechniques,suchas,radiofrequency(rf)sputtering(Jiaet
al.,2005),laserablation(Hayamizuetal.,1996),MBE(ElShaeretal.,2005)andmetal
organicchemicalvapourdeposition(MOCVD)(Kobayashietal.,1996andSbrockeyand
Ganesan,2004)hasbeenemployedforZnOfilmdeposition.MBEoffersthegreatest
http://www.sciencedirect.com/science/article/pii/S0093641311000346
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potentialforproducinghighqualityepitaxialorpolycrystallineZnOfilmsonlargearea
substratesinaproductionscale.OurworkhasbeenfocusedontheMBEgrowthofhigh
qualityepitaxialZnOfilmsonorientedsapphiresubstrates(RAl2O3andCAl2O3).
Residualstresseswillbeproducedinevitablyinthinfilmduetothestructuralandthermal
misfitofthethinfilms/substrateandtheprocessfromhightemperaturetolow
temperatureduringthedepositionofthinfilms(Njehetal.,2000).Previousworkhas
shownthattheresidualcompressivestressmaycausethedelaminationofthefilmfrom
thesubstrateandtheresidualtensilestressmaycausesurfacecrackinfilms(Evansand
Hutchinson,1995).
Asinglecrystallinemateriallikeanepitaxiallayerrequiresforasuitablediffraction
methodinordertodeterminetheresidualstrainwithinthematerial.Asaconsequence
fromtheBraggequation,twomainroutesareavailable.Eitheroneappliesa
polychromatic(white)Xraybeamonafixedsampleoronechangesthesample
orientationincaseofamonochromaticbeam.Thefirstmethodistheapplicationofthe
wellknownLauetechniquetothinepitaxialfilmsandhasseveraladvantageslikehigh
speeddatacollection(thecombinationofLauediffractionwithamicrosizedXraybeam
(microdiffraction)evenallowstodeterminestrainsofsinglecrystalsinapolycrystalline
film).Thesecondmethodisnothingbuttheapplicationoftheusualsinglecrystal
diffractionbyrotatingthesampleintothereflectionorientations.Thismethodwas
availabletousinhouseusingtheSeifertdiffractometer.Sinceboththesample
orientationandtheorientationofthediffractingplaneswithinthesinglecrystallinelayer
areknown,wecanadapttheXraycrystallographicequationwhichrelatesreflection
positionstodspacingstotheparticulardiffractiongeometry.Thisadaptationisoutlined
inSection2.
Severaltechniquessuchasnanoindentationfracturemethod,Xraydiffraction,and
Ramanspectroscopywereusedtomeasureresidualstressinthinfilms.However,aswe
know,itispossiblyincorrecttoevaluatetheresidualstressesinpiezoelectricthinfilmsby
conventionalXRDmeasurement(Zhengetal.,2003),wherethinfilmsareassumedas
isotropicandthepiezoelectriccouplingeffectsareneglected.Inthismethod(called
sin2method),strains()ofaspecificlatticeplane(hkl)aremeasuredatsomeoffset
angle(),andthentheresidualstressofthinfilmwascalculatedfromtherelationshipof
sin2.Themethodsin2wasmainlyusedforpolycrystallinethinfilmwithrandom
orientation.Zhengetal.(2004)haveemployedthismethodtoevaluateresidualstressin
PZTthinfilm,inwhichthepiezoelectriccouplingfactorhasbeenintroduced.Thismethod
cannotbeappliedtothestressdeterminationinthinfilmswithpreferredorientation
becauseXraydiffractionisobtainedonlyatadefiniteangle(whereistheangle
betweenthediffractingplanenormalandthespecimensurfacenormal).Therefore,this
methodwasmodifiedtoutilizetohighlyorientedthinfilmsseverallatticeplanes,
(h1,k1,l1),(h2,k2,l2),(h3,k3,l3),wereusedinsteadofaspecificlatticeplane.This
methodwasalsoappliedtoepitaxialthinfilmsofmetalsandsemiconductors(Eiperet
al.,2005).
Inthepresentwork,weproposedanextendmodeltoevaluateresidualstressesin
epitaxialpiezoelectricZnOfilmswithXraydiffraction.
2.Theoreticalanalysis
Xraydiffractiontechniqueisoneofthenondestructivemethodstoevaluateresidual
stressinthinfilms.(WhenabeamofXrayswiththewavelengthisincidentuponthe
surfaceofthesamples,diffractionoccursandmeetsBragg'sdiffractionequation).
Whenresidualstressexistsinthesamples,thecrystalplanespacingdisdifferentfrom
d0ofthesamplesfreeofresidualstress.Thestrain ,inthearbitraryorientation
definedbyanglesand,canbeshownbytherelativechangesofthediffractionplane
spacingandisassociatedwiththediffractionpeakdisplacement,thatis,
(1)
Turn
on
whereand0aretheBragganglesforthesampleswithandwithoutresidual
stress,respectively.Theevaluationofthestraintensorijorstresstensorijfromthe
strain
measuredbyXraydiffractionrequiresatransformationfromthesample
systemStothelaboratorysystemL.Usually,S3ischosenperpendiculartothe
samplesurface,asindicatedinFig.1.Themeasuredstrain,giveninL,isalongtheL3
axis,whichisdefinedbythescatteringvector .
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Fig.1.
Xraydiffraction:2scansofZnOthinfilmsgrownonRAl2O3andCAl2O3.
Figureoptions
Sinceweobtainthediffractiondatainthelaboratorysystem,onehastotransform
intothestraintensor giveninS,accordingto
(2)
whereAisthematrixwhichtransformsfromStoLwhichisdefinedbyEiperetal.
(2005)
(3)
Eqs.(2)and(3)arecombinedtogive
(4)
Itiswellknownthatelasticandelectricexcitationsinapiezoelectricmediaare
interconnectedandaredescribedinaquasistaticapproximationbythefollowing
equations:
(5)
(6)
where and arestressandstraintensors, and aretheelectric
displacementandelectricfieldintensity,and
, and aretheelastic,
piezoelectricanddielectricconstantsdefinedinthesamplesystem.Ifthepiezoelectric
materialispolarizedinzaxisdirection,Eqs.(5)and(6)give:
(7)
(8)
Atastressfreesurfaceofthethinfilm,thestressandelectricboundaryconditionsare
givenas
(9)
SubstitutingintoEqs.(7)and(8)andconsidering13=23=0,weobtain
(10)
and
(11)
ThesolutionofEqs.(10)and(11)gives
(12)
where
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Wenotethatif
theexpressionof
canbeobtaineddirectlyfromEq.(11).
SothatEqs.(4)and(12)canbeexpressedas
(13)
Theideaistoincludeatleasttwoaccessiblereflectionsintotheevaluation.Foreach
azimuthalorientation=fixed(whereistheangleofrotationaboutthesample
normal),wemeasureallavailablereflections(h1k1l1),(h2k2l2),(h3k3l3),etc.Thenwe
changetothenext(hkl)group.Theinterceptof
vs.sin2isequalto atall
2
tilts.Similarly,theslopeof
vs.sin (fordifferentazimuthalorientations)yields
theunknownstraintensorcomponents and .Thevalueof and canbe
obtainedfromEqs.(12).
Forresidualstressevaluationbysin2methodoneshouldusetheXrayelastic
constants(XECs) and
definedforaspecificlatticeplane(hkl).Inthiswork,
whereseverallatticeplanesaretakenintoaccountinsteadofaspecificlatticeplane
(hkl),wehaveusedtheelasticconstantsCijkl.
Tocalculatethecorrespondingresidualstresscomponents,definedinthesample
systemS,wedevelopEqs.(7)andwetakeintoaccountthat13=23=0.Theobtained
systemis:
(14)
3.Experimentalprocedures
3.1.Samplepreparation
Al2O3substratesweredegreasedinboilingacetone,andisopropanolfor10minand
thendriedwithanitrogenjet.Afterthiscleaningprocedurethesubstrateswereloaded
intothebufferchamber.Thesubstrateswerethenthermallycleanedat800Cinthe
bufferchamberandtransferredintothegrowthchamber.Afterthethermaltreatmentthe
sapphiresubstratesshowasharpstreakyRHEEDpatternindicatingacleanandflat
surface.
Thereafter,alowtemperature(LT)ZnObufferlayerwasgrownat450Catagrowthrate
ofabout0.02nm/s.Afterthegrowthofabout6nmLTZnObuffer,theRHEEDpatterns
graduallychangedfromstreakytospotty.Thisindicatesarougheningofthegrowth
surface.Thegrowthisstoppedandannealingstartedat550Cforabout5min.Thena
sharpstreakyRHEEDpatternofZnOappearsagain.ThemainZnOlayerwasgrownat
differenttemperaturesrangingfrom450to550CandemployingvariousZnOratiosto
optimizethegrowthconditions.ZnOlayerswiththicknessofabout160nmwere
obtained.
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ThesurfacemorphologyoftheZnOlayerswascharacterizedbyatomicforce
microscopy(AFM).ThesurfaceroughnessoftheZnOlayersisabout0.2nmfora
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2m2mAFMscanarea.
3.2.Xraydiffractionmeasurement
XRDmeasurementswereperformedbyemployingahighresolutionSeifertPTS3003
diffractometerwithCuKradiation,operatedatavoltageof40kVandacurrentof
40mA.Theentireconfigurationconsistsofaprimarydivergenceslit(1mm),adouble
monochromatorontheprimary(tube)sideandalongsollerslit(0.4)onthedetectorside
withitsplatesperpendiculartothediffractionplane.Aflatgraphitemonochromatorwas
placedinfrontofthescintillationcounter.TheradiusRdwas360mmwhichisfairlylarge
foraconventionaldiffractometerandprovidesgoodangularresolution.
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TheepitaxialrelationshipbetweentheZnOfilmandthesubstratewasdeterminedusing
acombinationofXray:2andscansdiffraction.Thescanninganglewasintheregion
of3080withadegreeincrementof0.02.
Table 2
Table 3
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Residualstressofpolycrystallinethinfilmwasalsodeterminedbysin2method.The
filmstresswascalculatedfromtherelationshipbetweenthelatticestrain andtilt
angle.Inthecaseofepitaxialthinfilm,thefilmstresscannotbedeterminedbysin2
methodbecauseXraydiffractionofaspecific(hkl)planedoesnotoccuratanyangle.
Therefore,weappliedthemodifiedsin2methodtodeterminethefilmstressofepitaxial
thinfilm.
Latticestrainsofthe(hkl)planesweremeasuredalongparticularanglesbyXray
diffraction.Thelatticeplanes,usedtodetermineresidualstress,existonthesame
crystalzoneinthestereographicprojection.
TodeterminenecessaryparametersforXraymeasurementofresidualstressinZnO
thinfilms,weusedtheelastic,piezoelectricanddielectricconstantsfrom(ElHakikietal.,
2005)(Table1).Inthesemeasurements,tensilestressesareshownaspositivevalues
and,ontheotherhand,compressivestressesarerepresentedasnegativevalues.
Table1.
MaterialsparametersofZnOthinfilmfordifferentorientations.
Materialsparameters
ZnO(1120)/RAl2O3
ZnO(0001)/CAl2O3
Elasticconstants(GPa)
Piezoelectricconstants
(C/m2)
Dielectricconstants
(1011F/m)
Tableoptions
4.Resultsanddiscussions
4.1.Structuralproperties
ZnOhasawurtzitestructurewithlatticeparametersa=3.249andc=5.206.Fig.1
showstheXray:2scansfromaZnOfilmdepositedonRplaneandCplane
substrates.Only(0001)peaksareobservedinZnOfilmsonCAl2O3substrate.Incase
ofRsapphireweobservedtheZnOgrowswitha
orientation.
Xrayscanswereusedtoidentifytheepitaxialrelationships.Fig.2showsthescans
of
familyofZnO/RAl2O3structure.InsinglecrystallineZnO,thereareonlytwo
planesforthisfamilythatmakeanangleof16.3withthe
plane.Thesearethe
twopeaksthatweseeinFig.2.Thezoneaxiscorrespondingto
and
reflectionsofZnOis[0001].
Fig.2.
Xrayscansofthe
Al2O3.
familyplanesfrom
ZnOand
familyofplanesfrom
Figureoptions
Inasinglecrystalofsapphire,twoplanesofthe
with
plane.Thezoneaxiscorrespondingto
familymakeanangleof16.3
and
reflectionsof
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Al2O3is
.scansshowthatthepositionofthe
peaksfromZnOcoincide
withthe
peaksfromAl2O3.The
orientedgrowthofZnOthinfilmonR
Al2O3substratehasepitaxialrelationshipof
.
ThescansfromZnOgrownonCAl2O3arealsopresentedinFig.3.The
family
ofplanesfrom(0001)ZnOandthe
familyofplanesfrom(0001)Al2O3are
shown.Aswecansee,thereisa30rotationofaZnObasalplanewithrespecttothe
Al2O3substrate.TheepitaxialrelationshipforZnOis
.
Fig.3.
Xrayscansofthe
(0001)Al2O3.
familyplanesfrom(0001)ZnOand
familyofplanesfrom
Figureoptions
4.2.StressmeasurementbyXraydiffractionmethod
AftercharacterizingtheorientationoftheZnOfilms,weselectedthecrystallographic
planesforresidualstrainmeasurementofepitaxialthinfilms.TheselectedplanesofZnO
onRAl2O3are
,
,
and
.ThoseforZnOonCAl2O3are
,
and
.Therelative
orientationoftheZnOcrystallographicplanes(Fig.4aandb)canbedescribedbyangles
and.representstheazimuthalorientationofthepoleswithrespecttotheZnO
[0001]directionforZnO/RAl2O3andZnO
forZnO/CAl2O3.representsthe
anglebetweenthespecificcrystallographicplaneandZnO
forZnO/RAl2O3and
ZnO(0001)forZnO/CAl2O3.
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Fig.4.
StandartstereographicprojectionofZnOsinglecrystal.Theanisotropicstraininthefilmwas
characterizedbymeasuringthelatticespacingofthecrystallographicplanesmarkedbyfilledcircles:(a)
ZnOsinglecrystalin
orientationand(b)ZnOsinglecrystalin(0001)orientation.
Figureoptions
Inanyscientificexperiment,theerrorassociatedwiththemeasuredquantityisjustas
importantasthemeasuredvalueitselfandmustbeknownforthecorrectinterpretationof
theresults.
ThemainproblemsforresidualstressevaluationwithXraydiffractionmeasurements
aretheinstrumentalerrorsarisingfromdiffractometermisalignmentanderrorsproviding
fromthepositionofthesamplewithrespecttothefocusingcircle.Anydeviationrfrom
thecorrectpositiontangentialatthefocusingcirclewillcauseareflectionshift2.In
ordertoextractthepeakpositionofthementionedselectedplanes,:2scanswere
leastsquarefittedwiththreeVoigtfunctions.ThegoniometererrorfunctionG(,,)for
:2modehasbeenmeasuredusingpolycrystallinestandardZnOpowdersamples.All
measuredreflectionpositionswerecorrectedusingG(,,).
Taking
andb.
andsin2asordinateandabscissaaxis,theXRDdataareplottedinFig.5a
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Fig.5.
Dependencyofresidualstrain
(0001)onCAl2O3.
asafunctionofsin2:(a)ZnO
onRAl2O3and(b)ZnO
Figureoptions
Nosplittingwasobservedformeasurementsperformedforpositiveandnegative
tilts,whichmeanstheshearstresscomponentsarezero.Forallsamples,alinear
behaviorofthesin2plotisobserved.Theslopeof
straightlineisobtained
byleastsquareapproximation.Therelationshipbetweensin2andthecorresponding
islinearlyinterpolatedusingORIGINstandardsoftware.
AccordingtothematerialsparametersgiveninTable1,theextendedmodeldescribed
byEqs.(13)wasusedtoevaluatetheresidualstraininZnOthinfilmswithdifferent
orientations.TheresultsarelistedinTable2.
Table2.
ResidualstraintensorofdifferentZnOthinfilms
Structure
ZnO
(1120)/R
Al2O3
(2.660.03)103
(0.730.02)103
(3.340.04)103
(9.950.17)104
ZnO
(0001)/C
Al2O3
(2.010.024)103
(1.770.047)103
(2.550.06)103
(1.280.08)10
Tableoptions
Sincethediffractionmeasurementsindicatedapresenceofanisotropicinplanestress,
thecomponentsofthestresstensoralong[0001]and[1100]forZnO/RAl2O3,and
along[1010]and[1210]forZnO/CAl2O3(Fig.5aandb),calledfurtheras and
respectively,werecalculatedfromEqs.(14).Negativeslopesindicatethepresence
ofcompressiveanisotropicinplanestressesintwoperpendicularcrystallographic
directions.Ontheotherhand,thepositiveslopesindicatepresenceoftensileinplane
stresses.ThecorrespondingresultsarepresentedinTable3.
Table3.
AnisotropicinplanestresscomponentsofdifferentZnOthinfilms.
Structure
(MPa)
(MPa)
(MPa)
ZnO(1120)/RAl2O3
4018
187
2533
ZnO(0001)/CAl2O3
3855
37010
1734
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Tableoptions
AllresultsshowedthattensilestresswasappliedinepitaxialZnOdepositedonCAl2O3
substrate,whilethatcompressivestresswasappliedinZnOfilmonRAl2O3.
Thepositivesignof and indicatesthatthelatticeconstantalong[0001]axisis
constrictedascomparedtounstressedpowdertherefore,thefilmisinastateof
compression.Thestressesinbothcrystallographicdirectionsof(0001)planeare
385MPaand370MPa,whichareingoodagreementwiththevaluesreportedbyHwang
onsimilarsystem(Hwangetal.,2010).UsingEq.(12),thevalueof
iscloseto
20MPa.Onecanconcludethatpiezoelectriccouplingfactorplaysanimportantrolein
thedeterminationofresidualstressinpiezoelectricthinfilm.Thecontributionofthe
electromechanicalcouplingfactoron and valueswasaboutof5.4%.Itindicates
thattheconventionalXRDmeasurementofresidualstressmaybeinappropriateforthe
designandanalysisofpiezoelectricthinsystem,becausethecontributionof
piezoelectriccouplingontheresidualstresshasbeenneglectedintheconventional
model.
AcompressivestresshasbeenfoundforZnO/RAl2O3system.Similarresultshave
beenpresentedbyConchonetal.(2010),inwhichacompressivestresswasappliedin
ZnOonSiandonSi3N4/Sisubstrates.Thestressesinbothcrystallographicdirections
ZnO[0001]andZnO[1100]are401MPaand18MPa,respectively.The
differencebetweenthestresscomponents and showsthepresenceofstrong
anisotropyofstressontheRaluminasubstrate.Thisresultwasexpectedbecausethe
anisotropicratioof(1120)planeofZnOiscloseto1.838.ThewurtziteZnOcrystalis
acousticallyanisotropic.ThecalculatedRayleighwavevelocitypropagatingalongthe
[0001]and[1100]directionsare2506m/sand2666m/s,respectively.Similar
phenomenahavebeenfoundforepitaxialwurtziticGaNthinfilmonLiAlO2substrate
(Eiperetal.,2005).Forthisstructure(ZnO/RAl2O3)thepiezoelectricfactoriscloseto
zero
.Itindicatesthatthecontributionofpiezoelectriccouplingontheresidual
stressevaluationwasneglected.
Thepresentresultswillbeusedtostudytheeffectofresidualstressonsurfaceacoustic
wavepropagatingonZnO/CAl2O3andZnO/RAl2O3(Acoustoelasticeffect).
Particularly,theeffectofresidualstressonacoustoelasticfactorbehaviorofZnOthin
films.
5.Conclusion
HeteroepitaxialZnOthinfilmsweregrownonRAl2O3andCAl2O3substratesby
plasmaassistedmolecularbeamepitaxy(MBE).ZnOfilmsweregrownwith(0001)and
(1120)outofplaneorientationonCAl2O3andRAl2O3respectively.Theepitaxial
relationshipwasdeterminedbyacombinationofXray2scansandscans.The
resultingrelationshipsarefoundtobe
and
,respectively.Analyticaltechniqueofresidualstressin
epitaxialthinfilmbyXraydiffractionwasstudied.Basedonpiezoelectricconstitutive
relationshipandBraggdiffractionequation,theresidualstresseswererelatedtothe
slopeof
straightlineandthecouplingfactorintermsoftheelastic,dielectric
andpiezoelectricconstants.Themodifiedsin2methodwasapplied.Many
crystallographicplanes(hkl)wereemployedinthemeasurements.Theexperimental
resultsshowcompressiveinplanecomponentsofstresstensorforZnO/RAl2O3and
tensileinplanecomponentsofstresstensorforZnO/CAl2O3.Astronganisotropyof
stressontheRaluminasubstratehasbeenfound.Theeffectofthepiezoelectric
couplingfactoronresidualstressevaluationwasobservedonlyforZnO/CAl2O3system.
Thecontributionofthisfactorwasofabout5.4%onthemeasuredinplanecomponents
ofstress.
Acknowledgements
A.NjehisgratefultotheGermanForeignExchangeService(DAAD).M.H.BenGhozlen
isgratefultotheAlexandervonHumboldtFoundationforfinancialsupport.Manythanks
toDr.ThomasWiederforhelpfuldiscussionsonthemanuscript.
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Copyright2011ElsevierLtd.Allrightsreserved.
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X-ray Diffraction Measurement of Residual Stress in Epitaxial ZnO - α-Al2O3 Thin Film

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X-ray Diffraction Measurement of Residual Stress in Epitaxial ZnO - α-Al2O3 Thin Film

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10/08/2015

X-ray diffraction measurement of residual stress in

X-ray diffraction measurement of residual stress in

X-ray diffraction spectroscopy and X-ray photoelect

View more articles

Citing articles (6)

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