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Fig. 1.
Fig. 2.
Fig. 3.
Index TermsClass E, efficiency, high efficiency, power amplifier, transistor peak voltage.
I. INTRODUCTION
HE class-E amplifier [1][3] is one of the most important
switching-mode power amplifiers used in power electronics [4][6] and radio-frequency applications [7]. In principle,
the amplifier efficiency can approach 100%, with actual values
of efficiency usually in the range of 7093% [3].
Fig. 1 shows the most common class-E topology, namely the
low-order class E. The topology consists of a power transistor
acting as a switch to obtain high efficiency, a load resonant
circuit (C1 , C2 , L2 ), a choke L1 which acts as a dc current
source, and a load resistance Rload , to which the output power
is delivered.
High efficiency is obtained because the output circuit is designed to ensure that the voltage across the switch is already at
or near zero at the instant of turn ON and the current through
the switch is at or nearly zero at turn ON.
Fig. 2 shows typical normalized voltage and current waveforms in a low-order class-E amplifier.
In the classical class-E amplifier [1][3], namely nominal in
this paper, the ratio Vsw pk /Vdd is 3.562, Pout /(Vsw pk Isw pk ) is
0.098, and Isw pk /Idd is 2.862, where Isw pk is the peak device
Manuscript received September 28, 2012; revised November 26, 2012 and
January 14, 2013; accepted January 14, 2013. Date of current version May 3,
2013. This work was supported in part by Projects TEC2010-19207 (Spanish
MICINN), DGA-FSE, and OTRI 2008/0460. Recommended for publication by
Associate Editor J. M. Alonso.
A. Mediano is with the Aragon Institute for Engineering Research, University
of Zaragoza, Zaragoza 50018, Spain (e-mail: amediano@unizar.es).
N. O. Sokal is with Design Automation, Auburndale, MA 02466-2660 USA
(e-mail: nathansokal@gmail.com).
Digital Object Identifier 10.1109/TPEL.2013.2242097
current Id (t), and Vsw pk is the peak device voltage Vd (t), which
is a limitation in some applications [8].
Previous research tried to reduce the peak voltage with zener
diodes [9], [10], with a transformer and a diode [11], or with
a transmission line transformer [12]. A similar waveform is
obtained from class EF 2 and EF 3 amplifiers but those inverters
are more complex in design [13].
In this paper, the output resonant circuit is modified, as shown
in Fig. 3, by adding a resonant parallel LC circuit (C3 , L3 ),
which is tuned to the second harmonic of the switching frequency (2fo ), in series with the load. The second harmonic
yields a flat-top shape of the voltage waveform as presented
in [14] by the authors. A complete analysis of the topology is
included in this paper.
Previous publications by other authors analyze a similar topology with harmonic manipulation mainly for broadband or efficiency purposes [15][18], resonant circuits are
added to the class-E output network to obtain class-F amplification [17][19], broadband [20], [21], second-harmonic
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Fig. 4.
IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 11, NOVEMBER 2013
Fig. 5.
The basic strategy was to design for nominal class-E waveforms with a quasi-ideal switch and to optimize that design to
deliver the specified output power from a transistor being driven
to a specified peak flat-top voltage and operating at the highest
possible efficiency. To optimize the nominal class-E design, the
software adjusts the parameters C1 , C2 , L2 , C3 , L3 , and Rload .
Minimum and maximum limit values for each of the parameters are set with ranges from 50% to 200% of the nominal
values. L3 and C3 values must resonate at 2fo , as explained
earlier. The goal for the optimizer was set to provide the desired
output power, while making the efficiency as high as possible.
The normalized values (see Fig. 4) are shown in (1)(4), and the
HEPA screen is shown in Fig. 5
n = 1 rad/s
n
= 0.159 Hz
fn =
2
Rload(n ) = 0.9
Vdd(n ) = 1 V.
(1)
(2)
(3)
(4)
The normalized results for the class-E components are included in (5)(13). Note that inductor values are given in
Henries (H) and capacitor values are given in Farads (F)
(Vsw
L1(n) = 1 106 H
(5)
L2(n ) = 0.49 H
(6)
L3(n ) = 0.523 H
(7)
C1(n ) = 0.225 F
(8)
C2(n ) = 50.516 F
(9)
C3(n ) = 0.478 F
(10)
Vsw pk
= 2.9765
Vdd
(11)
Isw pk
= 2.8350
Idd
(12)
Pout
pk Isw
pk )
= 0.11832.
(13)
MEDIANO AND SOKAL: CLASS-E RF POWER AMPLIFIER WITH A FLAT-TOP TRANSISTOR-VOLTAGE WAVEFORM
Fig. 6.
Equations (14) and (15) can be used by designers to denormalize a design as shown in the example of Section IV
Lj = Lj (n )
n
Rload
Cj = Cj (n )
Rload(n )
n
Fig. 7.
TABLE I
SUMMARY OF TYPICAL SETTINGS
NOM
= 1 106 H
(16)
L2(n )
NOM
= 1.6239 H
(17)
C1(n )
NOM
= 0.2418 F
(18)
C2(n )
NOM
= 55.492 F.
(19)
Fig. 8.
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Fig. 9.
IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 11, NOVEMBER 2013
Fig. 10. Normalized device peak voltage and device peak current spectrum:
flat-top version (upper plots) and nominal version (lower plots).
flat-top solution at the expense of using two transistors. The flattop topology is clearly better than nominal class E and similar to
the class F (second harmonic). The best result is obtained from
class F (third harmonic) in addition to the second harmonic at
the expense of an additional resonant circuit in the output. That
circuit is more complex to design.
The ratio of output power versus transistor peak voltage times
peak current (output power capability) is 0.118 versus 0.098 in a
nominal class E, so more output is possible for a given amount
of stress on the transistor (see Fig. 9).
From the output power capability behavior, the best topologies are classes D and B. Those topologies have two devices,
including two gate drivers for the class D, which results in
more component cost and volume. The result for class F third
harmonic is at the cost of an additional resonator in the output versus the flat top and class F second harmonic solutions.
Class F second harmonic and flat-top class-E design are similar
in the result with some advantage for the class-F solution.
As shown in Fig. 7, the output voltage and current are not
purely sinusoidal in wave shape. In Fig. 10, the harmonic content
of drain voltage and output load current (normalized) is plotted
for both the flat top and nominal class-E amplifier.
(20)
(21)
MEDIANO AND SOKAL: CLASS-E RF POWER AMPLIFIER WITH A FLAT-TOP TRANSISTOR-VOLTAGE WAVEFORM
TABLE II
THEORETICAL AND EXPERIMENTAL VALUES OF COMPONENTS
Fig. 11.
Fig. 12.
Fig. 13.
Fig. 14.
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IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 11, NOVEMBER 2013
TABLE III
MAIN RESULTS IN THE PROTOTYPE (V d d = 12.2 V)
V. CONCLUSION
A new class-E circuit with a flat-top voltage waveform on
the transistor whose peak value is 81% of the peak value of
the voltage of a nominal class-E amplifier using the same dc
supply voltage has been presented. In this amplifier, the peak
voltage across the transistor is 3.0 times the dc supply voltage
Vdd , instead of the 3.6 times associated with nominal class-E
amplifiers. To obtain that response, a parallel LC resonator is
added to the load network, tuned to the second harmonic of the
switching frequency.
A normalized design is presented, and the behavior of the
circuit is shown with simulation showing that the ratio of output
power versus transistor peak voltage times peak current is 0.118,
versus 0.098 in a nominal class E.
The usefulness of the class-E circuits can be assessed as
the ratio of output power versus transistor peak voltage times
peak current. The improvement over the nominal class E (value
0.098), made by the flat-top circuit (value 0.118), was 20.4%
at a cost of one inductor and one capacitor.
The amplifier is compared in waveforms and output spectrum with a nominal class-E topology. A prototype was built
to validate the theory and the simulation. The advantage of a
flat-top voltage waveform is that the transistor peak voltage and
peak current for a given output power are reduced; then stress is
reduced, or more output power can be obtained with the same
amount of stress. The simulation is verified by laboratory measurements.
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MEDIANO AND SOKAL: CLASS-E RF POWER AMPLIFIER WITH A FLAT-TOP TRANSISTOR-VOLTAGE WAVEFORM
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Nathan O. Sokal (M56SM56F89LF94) received the Bachelors and Masters degrees in electrical engineering in 1950 from the Massachusetts
Institute of Technology, Cambridge, MA, USA.
From 1950 to 1965, he held engineering and supervisory positions with Holmes and Narver, Inc.,
M.I.T. Lincoln Laboratory, Mack Electronics Division of Mack Trucks, Inc., Di/An Controls, Inc.,
and Sylvania Electronic Systems Division. He was
involved with design, manufacturing, and field installation and operation of a wide variety of analog
and digital equipment for instrumentation, control, communications, computation, and signal and data processing. In 1965, he founded Design Automation,
Auburndale, MA, USA, an electronics consulting company doing product design, design review and needed redesign, and technology development for
equipment manufacturers and government agencies, and technical consulting on
legal matters for attorneys. Much of that work was focused on high-efficiency
switching-mode power conversion and power amplification, at frequencies from
dc to 3 GHz. He contributed to the technology of high-efficiency power conversion and RF power amplification.
Mr. Sokal received the Microwave Pioneer Award of the IEEE Microwave
Theory and Techniques Society, in recognition of a major, lasting contribution,
for development of the class-E RF power amplifier in 2007. In 2011, he received the Doctoral Degree Doctor Honoris Causa by the Polytechnic University of Madrid, Spain, for inventing and developing the class-E high-efficiency
switching-mode RF power amplifier. He is a Technical Adviser to the American
Radio Relay League, on RF power amplification and dc power conversion. He is
a member of the honorary professional societies Eta Kappa Nu, The Electromagnetics Academy, and Sigma Xi. He reviews technical manuscripts submitted for
publications and conferences: IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE
TRANSACTIONS ON CIRCUITS AND SYSTEMS, IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS, IEEE TRANSACTIONS ON POWER ELECTRONICS, IEEE TRANSACTIONS ON
INDUSTRIAL ELECTRONICS, IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS,
Power Electronics Specialists Conference, International Symposium on Circuits
and Systems, Applied Power Electronics Conference, International Conference
on Power Electronics, Drives, and Energy Systems for Industrial Growth, and
Design Automation Conference; and Transactions on South African Institute
of Electrical Engineers, European Power Electronics (EPE) Journal, and EPE
Conference.