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I.
INTRODUCTION
407
0-7803-5054-5.0407$10.00 01998 IEEE
A
P
A
WAVE VECTOR
centralvalley
satellite valley
Ebs
= 0. I MV/m
0.6
wave vector k
0.5
Satellite
valley
@ 0.4
0.3
0.2
0.1
E =-h 2 k 2
1:
2m
100
200
300
Electron samples
400
E hu = 0.4 MV/m
0.6
2 0.5
Satelliie
- _
i3 0.4
g 0.3
5 0.2
;0.1
(1)
mtral
100
200
300
Electron samples
400
5Ml
E h = l.OMV/m
0.6
SateHie
. - antral
valley
r-
100
200
300
Electron mmples
400
500
408
&2
Becbicfield
416 4n 4e
before being
409
15
t=QOps
t=QOps
10
I
2
-3
-4
5
10
- 0
c
-c
i i
.5
>
7 J
(I,
.+
-l
.-U
;U=
w L
"
~!
2
t=l30 s
.5
0
t=150ps
15
10
0
5
0
(ptii)
G U N N - E ~ COSCILLATOR
T
A typical application of a Gunn-diode in a cavity will now
be discussed. A high frequency oscillator (70 GHz) has
been chosen since it reveals an important aspect in the
understanding of the high frequency limit inherent to
Gunn-oscillators.
The doping profile of the Gunn-diode is shown in Figure 9.
An active region is sandwiched between highly doped
anode and cathode regions. These highly doped regions
ensure good ohmic contact with the external circuit. A
50% notch in the doping is included to provide an initial
high electric field near the cathode. The reason for the
notch will be explained later. The cavity is modeled as a
parallel resonant circuit shown in Figure 10.
The simulated voltage and current waveforms are given in
Figure 11. From these graphs it is evident that the
oscillator generates in the order of 140mW at 7OGHz with
an efficiency of 2.4%. These values are typical of Gunn-
(pili)
410
7 ,
. . . . . . . . . . . . . . . . .
. . . . . . . . : . . . . . . . . .
. . . . . . .
w
0104
........
:
0.5
1.5
U 5x10" cm-'
1x10" cm-'
0 1.2Sx10"cmJ
'
'
'
0.5
1.5
0.5
1.5
1.5
-lo!
0
'
0.5
:
1
10
15
20
25
30
Time [ps]
Fig. 11. The simulated voltage v(t) and currenti(t) waveforms for
the Gunn-oscillator desribed in the text. v(t) and i(t) are defined
in Figure 10.
411
followed by a 0 . 6 buffer
~
layer (n=1.4~10'*~ m - ~a) ,
0 . 3 undoped
~
injection layer ( n = l . l ~ l Ocm-3
' ~ ) which
serves as doping-notch, a l o p undoped active region
layer (n=2.5x101'~ m -and
~ )a 0 . 6 Si-doped
~
contact layer
(n=1.4x101*~ m - ~ ) .
+rem
byr
M(r b y r
-c----d
C. Packaging
D. Experimental results
Experimental results will be presented at the conference.
V. CONCLUSIONS
c.thcdE
412