Professional Documents
Culture Documents
V CE =V CEQV ( p )=12 V 6V =6 V
MIN
Resulting in
%=50
I L ( p )=
18 V 6 V
18V + 6 V
) =12.5
V L ( p) 20 V
=
=1.25 A
RL
16
I DC =
2
2
I L ( p )= ( 1.25 A )=0.796 A
Pi ( dc ) =V CC I dc =( 30 V ) ( 0.796 A )=23.9 W
2
20 V
V 2L
Po ( ac )=
=
2 RL
For resulting efficiency of
dc
Pi
P ( ac)
%= o
2cc
Maximum
2(30 V )
2V
Pi ( dc ) =
=
=35.81 W
RL
(16)
16
L
dissipation
( ) [
%=78.54
D 2=
V L ( P)
22V
=78.54
=72
V CC
24 V
( )
|A 2|
0.25 V
100 =
100 =10
2.5V
|A 1|
D 3=
| A 3|
0.1 V
100 =
100 =4
2.5 V
| A 1|
D 4=
|A 4|
0.05 V
100 =
100 =2
2.5 V
| A1|
=10.95%
Determine what maximum
dissipation will be allowed for
an 80-W silicon transistor (rated
at 25 ) if the reading is
required above
25
by a
derating factor of 0.5W/ at
case temperature of 125 .
A silicon power transistor is
operated with a heat sink
( SA=1.5 /W ) . the transistor,
rated at150 W
( 25 ) , has CS =0.5 /W , and
the mounting insulation has
CS =0.6 /W
. What maximum
power can be dissipated if the
ambient temperature is
PD =
T J T A
200 40
=
61.5 W
JC + CS + SA 0.5 /W +0.6 /W +1.5 /W
V . R .=
V NLV FL
60 V 56 V
100 =
100 =7.1
V FL
56 V
V r ( rms )=
2.4 ( 50 )
=1.2 V
100
V dc =V m
r=
4.17 I dc
4.17 ( 50 )
=30
=27.9 V
C
100
2.41 I dc
2.4 ( 50 )
100 =
100 =4.3
CV dc
100 ( 27.9 )
| | | || | |
dA f
1 dA
1
=
Af
A A
0.1 (1000 )
0.2%
=10mA/40uA=50
PD=10V(20mA)=200mW
R=
R=
=410
( 156.8
20 mA )
(20%) =
(75-25)C*2.5mV/C = 0.125V
New Vknee = 0.7-0.125 = 0.575V
100 C / 20C = 5
IF=(10-0.7)/(10+1k)=9.21mA
VF=0.7+10(9.21mA=0.79V
=hc/Eg =(6.626x10-34Js*3x108m/s) /
(1.43eV*1.6x10-19J/eV)
= 869nm
PD = VD x ID = 0.7V x 40 mA = 28 mW
Kn = 1 + Rf / Ri = 1 + 4kohms/2 k ohms =
3
Ans: 3
F = xy + xz = (xy + x)(xy+z)
F = (x+x)(y+x)(x+z)(y+z)
F= (x + y)( x + z) ( y + z)
1
f=
2 6 RC
C=
1
9
=6.497 x 10 F=6.5 nF
2 6 ( 10 k )( 1k )
A 1 + A 2 + A3=120
A 2=2 A1
A 3=2.7 A 1
A 1 +2 A 1+ 2.7 A 1=120
A 1=21.052 dB
A 3=56.842 dB 57 dB( nearest answer )