AO4456

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4456 uses advanced trench technology with a

monolithically integrated Schottky diode to provide
excellent RDS(ON),and low gate charge. This device is
suitable for use as a low side FET in SMPS, load
switching and general purpose applications. Standard
Product AO4456 is Pb-free (meets ROHS & Sony
259 specifications). AO4456 is a Green Product
ordering option. AO4456 and AO4456 are electrically
identical.

VDS (V) = 30V

ID =20A (VGS = 10V)
RDS(ON) < 4.6m (VGS = 10V)
RDS(ON) < 5.6m (VGS = 4.5V)

D
S
S
S
G

D
D
D
D

G
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A

Units
V

12

TA=25C

20

TA=70C

16

IDSM
IDM

Pulsed Drain Current B

TA=25C
Power Dissipation

Maximum
30

Junction and Storage Temperature Range

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead

120
3.1

PDSM

TA=70C

-55 to 150

Symbol

Alpha & Omega Semiconductor, Ltd.

2.0

TJ, TSTG

t 10s
Steady-State
Steady-State

RJA
RJL

Typ
31
59
16

Max
40
75
24

Units
C/W
C/W
C/W

AO4456

Electrical Characteristics (T J=25C unless otherwise noted)

Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=1mA, VGS=0V
VDS=24V, V GS=0V

30

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

VDS=0V, VGS= 12V

VGS(th)
ID(ON)

Gate Threshold Voltage

On state drain current

VDS=VGS ID=250A

1.4

VGS=10V, V DS=5V

120

TJ=125C

4.5

5.6

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Reverse Transfer Capacitance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

0.37

6430
VGS=0V, VDS=15V, f=1MHz

VGS=10V, VDS=15V, ID=20A

m
m
S

0.5

7716

pF

756

pF

352
VGS=0V, VDS=0V, f=1MHz

A
A

112

TJ=125C

mA

2.4

VDS=5V, ID=20A

IS=1A,V GS=0V
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current

Gate resistance

1.8

VGS=4.5V, ID=20A
VSD

Rg

20

7.4

Forward Transconductance

Crss

0.1

5.9

gFS

Output Capacitance

0.008

4.6

Static Drain-Source On-Resistance

Units
V

3.8

RDS(ON)

Coss

Max

0.1

VGS=10V, ID=20A

IS

Typ

pF

0.9

1.4

96

115

44

53

nC

17

nC

Qgd

Gate Drain Charge

13

nC

tD(on)

Turn-On DelayTime

17.5

ns

tr

Turn-On Rise Time

10

ns

tD(off)

Turn-Off DelayTime

56

ns

tf

Turn-Off Fall Time

10.5

ns

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=300A/s

20

Qrr

Body Diode Reverse Recovery Charge

IF=20A, dI/dt=300A/s

26

VGS=10V, V DS=15V, R L=0.75,

RGEN=3

25

ns
nC

A: The value of RJA is measured with the device in a still air environment with TA =25C. The power dissipation PDSM and current rating IDSM are
based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C.
C. The R JA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating.
Rev1: June 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

AO4456

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150

30
6V

4.5V

20
ID(A)

90

ID (A)

VDS=5V

25

10V

120

VGS=3.5V

60

125

15
10

25C

30

0
0

1.5

VDS (Volts)
Fig 1: On-Region Characteristics

3.5

Normalized On-Resistance

1.8
VGS=4.5V

5
RDS(ON) (m)

2.5

VGS(Volts)
Figure 2: Transfer Characteristics

VGS=10V

VGS=10V

ID=20A

1.6

VGS=4.5V

1.4
1.2
1
0.8

10

15

20

25

30

ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

30

60

90

120

150

180

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature

1.0E+02

10
ID=20A
8

1.0E+01

125C

1.0E+00

125C
IS (A)

RDS(ON) (m)

25C

1.0E-01
1.0E-02
1.0E-03

4
25C

1.0E-04
1.0E-05

2
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

VSD (Volts)
Figure 6: Body-Diode Characteristics

1.0

AO4456

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

12000

10

10000
VDS=15V
ID=20A

Capacitance (pF)

VGS (Volts)

4
2

6000
4000
Crss
2000

0
0

20

40

60

80

Coss

100

Qg (nC)
Figure 7: Gate-Charge Characteristics

1000.0

10

15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics

30

100
90

10s

100.0

10ms

1.0

70

1ms

0.1s

Power (W)

RDS(ON)
limited

10.0

DC

TJ(Max)=150C
TA=25C

0.1

TJ(Max)=150C
TA=25C

80

100
ID (Amps)

Ciss

8000

60
50
40
30
20
10

0.0
0.1

10

100

VDS (Volts)

0
0.0001

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

ZJA Normalized Transient

Thermal Resistance

10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1

0.1

Single Pulse
0.001
0.00001

0.0001

PD

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=40C/W

0.01

0.001

0.01

0.1

Ton

10

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

Alpha & Omega Semiconductor, Ltd.

100

1000

AO4456

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.0E-01

0.9
0.8

1.0E-02

10A

0.6
VDS=12V

VSD(V)

IR (A)

VDS=24V
1.0E-03

20A

0.7

1.0E-04

0.5
5A

0.4
0.3
0.2

1.0E-05

IS=1A

0.1
1.0E-06

0
50

100
150
200
Temperature (C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
70

8
di/dt=800A/us

60

Irm

trr (ns)

Irm (A)

125C

30

25C

2.5

125C

trr

15

25C
1.5

10

125C

10

0.5

25C
0

4
0

10

15

20

25

0
0

30

8
25C
125C

40

25C
30

5
4

Qrr

20

3
2

10

Irm

0
0

200

400

600

800

0
1000

di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt

Alpha & Omega Semiconductor, Ltd.

20

25

30

3
Is=20A

30

25
trr (ns)

Is=20A

50

15

35

Irm (A)

125C

10

Is (A)
Figure 15: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current

Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
60

125C

25C

20

25C

trr

15
10

Qrr (nC)

di/dt=800A/us

20

25C
Qrr

20

100
150
200
Temperature (C)
Figure 13: Diode Forward voltage vs. Junction
Temperature

25

40

50

125C

50
Qrr (nC)

125C

5
0
0

200

400

600

800

0
1000

di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt