AP4435GM

Pb Free Plating Product

Advanced Power
Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Simple Drive Requirement

D
D

Low On-resistance

D
D

Fast Switching

BVDSS

-30V

RDS(ON)

20m

ID

-8A

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

G
S

The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.

Absolute Maximum Ratings

Parameter

Symbol
VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID@TA=25
ID@TA=70

Rating

Units

- 30

20

Continuous Drain Current

-8

Continuous Drain Current

-6

-50

1,2

IDM

Pulsed Drain Current

PD@TA=25

Total Power Dissipation

2.5

Linear Derating Factor

0.02

W/

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol
Rthj-a

Parameter
Thermal Resistance Junction-ambient

Data and specifications subject to change without notice

Max.

Value

Unit

50

/W

201124043

AP4435GM
o

Electrical Characteristics@Tj=25 C(unless otherwise specified)

Symbol

Parameter

Test Conditions

Typ.

Max. Units

-30

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA

-0.04

V/

RDS(ON)

Static Drain-Source On-Resistance

VGS=-10V, ID=-8A

15

20

VGS=-4.5V, ID=-5A

26

32

VDS=VGS, ID=-250uA

-1

-3

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

VDS=-15V, ID=-8A

20

VDS=-30V, VGS=0V

-1

uA

Drain-Source Leakage Current (Tj=70 C)

VDS=-24V, VGS=0V

-25

uA

Gate-Source Leakage

VGS=20V

100

nA

ID=-4.6A

36

nC

Drain-Source Leakage Current (Tj=25 C)

IGSS

VGS=0V, ID=-250uA

Min.

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=-15V

5.5

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-10V

3.5

nC

td(on)

Turn-on Delay Time

VDS=-15V

12

ns

tr

Rise Time

ID=-1A

ns

td(off)

Turn-off Delay Time

RG=6,VGS=-10V

75

ns

tf

Fall Time

RD=15

40

ns

Ciss

Input Capacitance

VGS=0V

1530

pF

Coss

Output Capacitance

VDS=-15V

900

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

280

pF

Rg

Gate Resistance

f=1.0MHz

Min.

Typ.

IS=-2.1A, VGS=0V

-1.2

Source-Drain Diode
Symbol
VSD

Parameter
Forward On Voltage

2
2

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=-5A, VGS=0V,

55

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

83

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2

3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad.

AP4435GM
50

50

40

T A =150 C
-ID , Drain Current (A)

-ID , Drain Current (A)

-10V
-8.0V
-6.0V

T A =25 C

30

V G =-4.0V
20

10

30

V G =-4.0V
20

10

0
0

10

10

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1.6

50

I D =-8A

I D =-8A
V G =-10V

1.4

o
T A =25 C

Normalized R DS(ON)

40

RDS(ON) (m )

-10V
-8.0V
-6.0V

40

30

1.2

1.0

20

0.8

0.6

10

-50

10

-V GS , Gate-to-Source Voltage (V)

50

100

150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature
3

100.00

10.00

T j =25 o C

-VGS(th) (V)

-IS(A)

T j =150 o C
1.00

0.10

0.01

0.1

0.3

0.5

0.7

0.9

1.1

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.3

-50

50

100

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

150

AP4435GM
f=1.0MHz

-VGS , Gate to Source Voltage (V)

14

10000

I D =-4.6A
V DS =-15V

12

10

C (pF)

C iss
1000

C oss

C rss

100
0

10

20

30

40

50

Q G , Total Gate Charge (nC)

13

17

21

25

29

-V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Normalized Thermal Response (Rthja)

100.00

100us
10.00

1ms

-ID (A)

10ms
100ms
1.00

T A =25 C
Single Pulse

1s

Duty factor=0.5

0.2

0.1

0.1

0.05

0.02
0.01

PDM
0.01

Single Pulse

T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125
/W

0.10

0.001

0.1

10

100

0.0001

0.001

0.01

-V DS , Drain-to-Source Voltage (V)

0.1

10

100

1000

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

50

V DS =-5V

-ID , Drain Current (A)

40

VG
T j =25 o C

T j =150 o C

QG
-10V
30

QGS

QGD

20

10

Charge
0

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Circuit

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