SET-1

ST. MARTINS ENGINNERING COLLEGE

MID II Question Paper

PROGRAMME: B.Tech
YEAR/ BRANCH: II B.TECH E.C.E-B- I SEM
Time: 60Minutes

SUBJECT: EEE
MAX. MARKS: 10
DATE:-10 -2015

Answer any TWO Questions

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1(a) Sketch the V-I characteristics of p-n junction diode for forward bias voltages. Distinguish between the
Incremental resistance and the apparent resistance of the diode?
(b) At room temperature under the forward bias of 0.15 V the current through a p-n junction is 1.66 mA. What
will be the current through the junction under reverse bias?
2(a) Explain Zener and avalanche breakdown mechanisms in detail?
(b) How does the reverse current of a Si p-n junction change if the temperature raises from 20
to 50 C? The same for
a Ge p-n junction. Band gaps of Si and Ge are 1.12 and 0.66 eV, respectively.

3(a) Draw the circuit of a half-wave-rectifier and find out the ripple factor, % regulation? Efficiency and PIV?
(b) What is the equivalent resistances between A and B of the following circuit

(a) 36 if VA>VB (b) 18 if VA<VB

(c)zero if VA<VB 54 of VA<VB (d) zero if VA<VB 54 of VA>VB
4. Define Early-effect; explain why it is called as base-width modulation? Discuss its consequences in
Transistors in detail? How transistor acts as an amplifier?

SET-2
ST. MARTINS ENGINNERING COLLEGE

MID II Question Paper

PROGRAMME: B.Tech
YEAR/ BRANCH: II B.TECH E.C.E-B- I Sem
Time: 60Minutes

SUBJECT: EEE
MAX. MARKS: 10
DATE: -10-2015

Answer any TWO Questions

*****************

1(a) Define Fermi level? By indicating the position of Fermi level in intrinsic, n-type and p- type
semiconductor, explain its significance in semiconductors?
(b) when a reverse bias is applied to a germanium PN junction diode ,the reverse saturation current at room
temperature is 0.3A .Determine the current flowing in the diode when 0.15V forward bias is applied at
room temperature.
2(a) Explain the relative merits and demerits of all the rectifiers?
(b) A half wave rectifier is used to supply 24V dc to a resistive load of 500 and the diode has a forward
resistance of 50 .calculate the maximum value of the ac voltage required at the input .
3(a) Explain in detail about the current measurement in CRO.
(b) What is the current passing through 100 resister in the circuit? here the resistance of the diode in forward
bias is 50

4. Define deflection in a CRT? List the applications of CRO.

SET-3
ST. MARTINS ENGINNERING COLLEGE

MID II Question Paper

PROGRAMME: B.Tech
DIGITAL IMAGE PROCESSING
YEAR/ BRANCH: IV B.TECH E.C.E-A&C- I Sem
Time: 60Minutes
2015

SUBJECT:
MAX. MARKS: 10
DATE: 31- 10-

Answer any TWO Questions

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1(a) Draw the input and output characteristics of a transistor in common base configurations?
(b) The reverse saturation current of a silicon PN junction diode is 10A.calculate the diode current for the
forward bias voltage of 0.6V at25 0C.
2(a) Explain the constructional details of Bipolar Junction Transistor? Derive the relation among , and ?
(b) show that maximum DC output power Pdc=Vdc*Idc in a half wave single phase circuit occur when the load
resistance equals diode resistance rf.
3(a) Explain about electrostatic and magnetic deflection in CRO.
(b) a half wave rectifier having a resistive load of 1000 ,rectifies an alternating voltage of 325V peak value
And the diode has a forward resistance of 100 .calculate (a) peak, average, and rms value of current
(b)DC power output (c) AC input power (d) efficiency of the rectifier.
4. How can the phase difference between two AC voltages be measured by CRO?