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Q1
If Ar + ion and electron have 5eV kinetic energy- what is their velocity?
1 2
mv
2
Argon ion mass = 6.63*10^-26 kg
velocity of Argon ion is 4.912 km/s.
Electron mass is 9.10938*10^-31 kg
velocity of electron is 1325.3 km/s
Kinetic energy =
Q2
What is the algorithm to calculate the number of electrons above E=5eV when electron
temperature is T=1000K. Obtain an analytical expression (you may make simplifying
assumptions). Dissociation requires 5eV energy. If the rate of dissociation is R at electron
temperature of 1000K, how much temperature is required to increase the rate by 10x?
1. The density of states which electrons occupy are of parabolic in nature. The distribution
of density of states has to be known.
2. Multiply the probability function of density of states with density of states function.
3. Integrating the total function with above the 5eV.
Density of states function
N (E)=
8 (2) m3/n 2
(EEC)
h3
1
1+ exp
E E F
kT
approximation it taken.
N ( E) f ( E)dE
E C +5 eV
2 m n kT
h
3 /2
] exp
ECE F
kT
ercf (
5 eV
)
kT
`
R1=R0 exp(E / KT )
a
R2=R 0 exp(E / KT )
applying R2 to 10R1 , T1 = 1000K, we get T2=1017.5 K
a
Q3
Why do we need a matching network to power a plasma? What is the impedance model of
a plasma? Which element absorbs the power applied in a plasma?
The matching network is needed to reduce the reflection losses from the plasma. To provide
more power to the plasma.
Impedance model of plasma
Resistor of plasma
The sheath region at electrodes absorbs more power. Sheath meas it is like a capacitor.
Plasma absorbs very less power.
Q4
Write down 5 or more points where the semiconductor analogy of plasma is reasonable.
1.
2.
3.
4.
5.
Q5
Explain why sustaining a plasma requires pressure control. What is needed to sustain a
plasma at high pressure?
At low pressures ions have a longer mean free path. Therefore they are accelerated for longer
times, allowing them to gain more kinetic energy before reaching the substrate. The low
pressure, high ion energy enables physical etching to dominate. At higher pressures, the ions
will collide with more gas molecules giving large concentrations of etchant molecules and
enabling chemical plasma etching. So pressure control is required to whether etch physically or
chemically.
At high high pressure electrons don't gain much energy in shorter mean free path. Supply of gas
molecules has to be low.
Q6
Using an energy vs. configuration space plot, show a non-spontaneous reaction. Annotate
activation energy of 7eV and energy for reaction of 3eV for CF 4 (g) + H 2 (g) + c Si
CH 4 (g) + SiF 4 (g) . Can a plasma convert it to a spontaneous reaction assuming
dissociation energy for CF 4 (g) CF 3 (g) + F is 5eV? What is the acceleration factor of
forward reaction rate at 200C?
DUE TO PLASMA
7eV
energy
3eV
WITHOUT PLASMA
Reaction Coordinate
Here plasma boosts the reaction and gives energy to the reactants. Here the activation energy
decreases. The reaction becomes spontaneous because of plasma boost.
Q7
Why are inert atoms like Ar needed for plasma etching? Alternatively, why is there no
etching when only of the reactants Ar or XeF2 is present? Can the plasma accelerate a
negative ion e.g. F- ? In that case, what species is causing etching in a CF 4 plasma?
In physical etching anisotropy is good where as selectivity is not good because it does not
differentiate between different materials. In chemical etching selectivity is good but isotropic.
So to get good anisotropy and selectivity the ions hitting the surface have to be of low energy to
enhance the reactivity of that surface. And inert atoms like Ar have low energy. When only Ar
atoms are present then the surface they are hitting experience low energy and etching will not
happen(even if it happens it is almost zero). When only XeF2 is present the F radicals are not
released in large number and etching is so small(almost zero). Plasma will not accelerate the
negative ions and they get trapped in plasma itself. In CF4 CF3+ ions hit the surface and make
it more reactive and F radicals go there and react with material and etch it.
Q8
Why is an ac frequency needed to add higher bias to the ions? What will happen if it is dc?
Draw a circuit diagram to explain. Assume that your substrate is SiO2 on metal.
Below explanation when there is no Sio2 on metal plate:
Vrf
matching network
block capacitor
plasma
Below explanation when there is Sio2 on metal plate:
But if it is Sio2 the large number of positive ions are accumulated at the cathode plate and
there won't be potential difference between the two electrodes and plasma won't sustain.
In RF-generated plasma, a radio frequency voltage applied between the two electrodes causes
free electrons to oscillate and collide with gas molecules leading to a sustainable plasma.
RF-excited discharges can be sustained without relying on the emission of secondary
electrons from the cathode.
Q9
Draw the band diagram to show that RF bias adds high V for ions to be accelerated while
ICP will only cause the acceleration due to plasma potential.
BAND DIAGRAM IN RF BIAS
Va
Eg
Va
Eg
grounded plate
voltage
At the grounded electrode potential difference is of plasma and grounded plate is less where as
at the other electrode difference is more and ions hit substrate surface with more energy.
ICP plasma voltage variation
voltage
At the both plates the potential difference with respect to plasma is same. That is why ICP will
cause the acceleration only due to plasma potential.
Q11
Why do charged species have higher collision cross-section for oppositely charged species
compared to than neutral species. For charged species, should the cross-section depend
upon the sign and magnitude of the two charged species colliding? Describe the
dependence.
For charged species the oppositely charged particles are get attracted and hit it. Where as neutral
atom will be hit by other particles which are coming straight in its way. If charged species have
same charge then they repel each other and collision will not happen(if it has more energy only
then it will hit).
Q10
Design the Bosch process steps to get any angle of the sidewall e.g 45, 90, or 135 from
the surface?
During this process first we put mask every where except at etching portions.
By chemical reaction etchant removes silicon.
For 135 degrees the etching time has to be more where vertical etching is equal to
horizontal etching.
Q12
Download SRIM, implant B at 500eV. Measure the range, standard deviation. What would
be the energy required to implant B at 1m depth. Write down an algorithm for a noniterative process of identifying the energy.
Energy = 500eV
Boron ion distribution
Number of ion =999