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MAHALAKSHMI
ENGINEERING COLLEGE
TIRUCHIRAPALLI-621213.
QUESTION BANK
DEPARTMENT: EEE
SEMESTER - III
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6.
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8.
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13. How do the transition region width and contact potential across a PN junction vary
with the applied bias voltage?
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14. Define peak inverse voltage in a diode.
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2. (i) With neat diagram explain the construction and working of LED.
(ii) Explain the working of LCD seven segment displays using square wave supply.
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3. With a neat diagram explain the working of a PN junction diode in forward bias and
reverse bias and show the effect of temperature on its V-I characteristics.
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4. Explain V-I characteristics of Zener diode.
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5. Draw the circuit diagram and explain the working of full wave bridge rectifier and
derive the expression for average output current and rectification efficiency.
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6. Explain the operation of FWR with centre tap transformer. Also derive the Following
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Explain the operation of a Full wave Rectifier and derive its Ripple factor.
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10. Draw and explain the circuit diagram of full wave rectifier with inductor filter.
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11. Derive the expression for ripple factor for full wave rectifier with L section filter
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12. Draw the output voltage waveform of a half wave rectifier and then show the effect on
this waveform by connecting a capacitor across the load resistance.
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13. Derive the expression for the ripple factor of a full wave rectifier with capacitor input
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filter.
14. Draw and explain the bridge rectifier circuits with waveforms.
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(ii) Discuss the working principle, characteristics and applications of LED in detail.
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16. (i)Distinguish between avalanche and zener mechanisms.
(ii)Explain how barrier potential is developed at the PN junction.
17. Discuss the following: (i) Transition capacitance (ii) Diffusion capacitance.
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18. Explain the VI characteristics of PN diode and the current components of it
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UNIT 2
BJT AND ITS APPLICATIONS
PART A (2 Marks)
1. Draw the h-parameter equivalent circuit of a CE BJT configuration.
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6. In a BJT, the emitter current is 12 mA and the emitter current is 1.02 times the
collector current. Find the base current.
7. Why is collector region wider than emitter region in BJT?
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8. In a BJT, the emitter current is 12 mA and the emitter current is 1.02 times
the collector current. Find the base current.
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11. Draw the input and output characteristics and in CE configuration and mark active
saturation cut off region.
12. State the advantages of optocoupler.
13. Which of the BJT configuration is suitable for impedance matching applications?
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Why?
14. What is meant by thermal run away?
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17. Draw and explain input and output characteristics of a transistor CB configuration
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18. List the comparison between CB, CE, CC amplifiers.
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19. State the biasing conditions required for the three regions of operation of a BJT.
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PART B(16 Marks)
1. Draw the circuit for determining the transistor common base characteristics and
explain how the characteristics are measured and draw the graphs.
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2. For a common emitter circuit draw the h-parameter equivalent circuit and write the
expressions for input impedance, output impedance and voltage gain.
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3. For a common emitter circuit draw the h-parameter equivalent circuit and write the
expressions for input impedance, output impedance and voltage gain
4. Draw the h-parameter equivalent circuit of a transistor in CE configuration
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5. Describe the methods of determination of h-parameters from its static Input and
output characteristics.
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6. Explain the important characteristics of optocoupler.
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8. Describe the static input and output characteristics of a CB transistor with neat circuit
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diagram.
9.
Derive the expression for current gain, input impedance and voltage gain of a CE
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Transistor Amplifier.
10. (i)Draw and explain the input and Output characteristics of a BJT in CE
configuration.
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(ii) Write a note on optocouplers.
9.
(i) Draw the Hybrid model of CE configuration and also derive the expressions for its
Input and Output Impedances, current and voltage gain.
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UNIT 3
FET AND ITS APPLICATIONS
PART A (2 Marks)
1. What is pinch off voltage?
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8.
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Define:
(a) Pinch off voltage and
(b) Amplification factor in JFET.
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11. What do you understand by pinch off voltages and cutoff voltages?
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2. Explain the construction and working of enhanced MOSFET and depletion MOSFET.
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3. i) Explain how the transconductance of a JFET varies with drain current and gate
voltage characteristics and transfer characteristics.
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4. A JFET has the following parameters IDDS = 32 mA, VGS(off) = -8 Volts, VGS = -4.5
Volts. Find the values of drain current.
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5. i) Explain the working of n-channel enhancement type MOSFET. Sketch its typical
characteristics.
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6. Explain the construction of N channel JFET. Also explain the drain and transfer
characteristics of the same.
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7. i) Describe the operation of common drain FET amplifier and derive the equation for
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voltage gain.
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8. Explain in detail the construction and working principle of Depletion MOSFET. Also
explain how Depletion MOSFET acts both in enhancement and depletion mode.
9. i) With a neat circuit diagram explain the operation of a common source amplifier.
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ii) From the low frequency model, determine the input and output impedances and
the voltage gain of a JFET.
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2. 1. With a neat diagram explain the construction of BJT RC phase shift oscillator.
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3. (i)Draw the block diagram of a voltage series feedback amplifier and derive the
equation for input impedance, output impedance and the voltage gain.
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(ii) Calculate the voltage gain, input and output resistances of a voltage series
feedback amplifier having AV = 300, Ri = 1.5 k, Ro = 50 k and = 1/15.
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4. Differentiate oscillator with amplifier.
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5. Draw the circuit of a Hartley oscillator and derive the condition for the frequency of
oscillation.
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6. Derive the equation for differential mode gain and common mode gain of a
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differential amplifier.
7. Draw and explain the operation of a Hartley oscillator.
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9.
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8. What is a multivibrator?
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9. Sketch the idealized characteristics for low pass, high pass, band pass, band reject
filter.
10. Define intrinsic standoff ratio of UJT and draw its equivalent circuit.
11. What is the difference between sinusoidal and non sinusoidal waveforms?
12. What is high pass RC circuit? Explain its features and use.
13. Compare the transistors used in multivibrator circuits with those that are used in
conventional amplifiers
PART B(16 Marks)
1. 1. Explain the construction, equivalent circuit and operation of UJT. Draw the
characteristics of UJT.
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(ii) Describe the working of a Schmitt trigger circuit with the help of necessary
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waveforms.
3. i) Sketch the response of RC high pass filter for the following inputs and explain.
(1)Ramp
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(2) Pulse.
(ii) Explain the operation of a bistable multi-vibrator circuit with neat sketch.
4. i) Explain the working of UJT as a relaxation oscillator with necessary wave forms
and equations.
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6. What are a clipper and clamper? Explain the concept of a positive clipper and a
clamper.
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