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Philips Semiconductors

Product specification

Rectifier diodes
fast, soft-recovery
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diodes in a full pack plastic
envelope featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic. The
devices are intended for use in TV
receivers, monitors and switched
mode power supplies.

BY329X series

QUICK REFERENCE DATA


SYMBOL
VRRM
IF(AV)
IFSM
trr

PINNING - SOD113
PIN

PARAMETER

MAX. MAX. MAX.

BY329X
Repetitive peak reverse
voltage
Average forward current
Non-repetitive peak
forward current
Reverse recovery time

-800
800

PIN CONFIGURATION

-1000 -1200
1000 1200

UNIT
V

8
65

8
65

8
65

A
A

145

145

145

ns

SYMBOL

DESCRIPTION
case

cathode

anode

k
1

a
2

case isolated
1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

VRSM
VRRM
VRWM

Non-repetitive peak reverse


voltage
Repetitive peak reverse voltage
Crest working reverse voltage

IF(AV)

Average forward current1

IF(RMS)
IFRM
IFSM

I2t
Tstg
Tj

CONDITIONS

square wave; = 0.5;


Ths 83 C
sinusoidal; a = 1.57;
Ths 90 C

RMS forward current


Repetitive peak forward current t = 25 s; = 0.5;
Ths 83 C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; Tj = 150 C prior
to surge; with reapplied
VRWM(max)
I2t for fusing
t = 10 ms
Storage temperature
Operating junction temperature

MIN.

MAX.

UNIT

-800
800

-1000 -1200
1000 1200

800
600

1000
800

V
V

1200
1000

11
16

A
A

65
71

A
A

-40
-

28
150
150

A2s
C
C

1 Neglecting switching and reverse current losses.


May 1995

Rev 1.000

Philips Semiconductors

Product specification

Rectifier diodes
fast, soft-recovery

BY329X series

ISOLATION LIMITING VALUE & CHARACTERISTIC


Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

R.M.S. isolation voltage from


both terminals to external
heatsink

f = 50-60 Hz; sinusoidal


waveform;
R.H. 65% ; clean and dustfree

Cisol

Capacitance from both terminals f = 1 MHz


to external heatsink

MIN.

TYP.

MAX.

UNIT

2500

10

pF

MIN.

TYP.

MAX.

UNIT

55

4.8
5.9
-

K/W
K/W
K/W

MIN.

TYP.

MAX.

UNIT

1.5
0.1

1.85
1.0

V
mA

MIN.

TYP.

MAX.

UNIT

125
0.5
50

145
0.7
60

ns
C
A/s

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Thermal resistance junction to


heatsink
Thermal resistance junction to
ambient

with heatsink compound


without heatsink compound
in free air.

Rth j-a

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

VF
IR

Forward voltage
Reverse current

IF = 20 A
VR = VRWM; Tj = 125 C

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

trr
Qs
dIR/dt

Reverse recovery time


Reverse recovery charge
Maximum slope of the reverse
recovery current

IF = 1 A; VR > 30 V; -dIF/dt = 50 A/s


IF = 2 A; VR > 30 V; -dIF/dt = 20 A/s
IF = 2 A; -dIF/dt = 20 A/s

May 1995

Rev 1.000

Philips Semiconductors

Product specification

Rectifier diodes
fast, soft-recovery

dI
F

BY329X series

100

IFS (RMS) / A

BY329

90

dt

80
IFSM

70

trr

60

time

50
40

Qs

30

100%

25%

20
10

0
1ms

rrm

Fig.1. Definition of trr, Qs and Irrm

20

30

54

15

10s

BY229F

Tj = 150 C
Tj = 25 C

78

0.5

20

0.2

10

1s

IF / A

D = 1.0

Vo = 1.25 V
Rs = 0.03 Ohms

0.1s
tp / s

Fig.4. Maximum non-repetitive rms forward current.


IF = f(tp); sinusoidal current waveform; Tj = 150C prior
to surge with reapplied VRWM.

Ths(max) / C

BY329

PF / W

10ms

102

0.1
tp

D=

tp
T

6
IF(AV) / A

typ

10

150
12

0
0

Fig.2. Maximum forward dissipation, PF = f(IF(AV));


square wave current waveform; parameter D = duty
cycle = tp/T.

15

Ths(max) / C

BY329

PF / W
Vo = 1.25 V

0.5

1
VF / V

10

78

2.2

BY329

Qs / uC
Tj = 150 C
Tj = 25 C

IF = 10 A

1.9
10

1.5

Fig.5. Typical and maximum forward characteristic;


IF = f(VF); parameter Tj

a = 1.57

Rs = 0.03 Ohms

max

0
0

10

126

10 A

102

2A

2.8
4

1A
2A

1A

126

0
0

4
IF(AV) / A

0.1

150
8

Fig.3. Maximum forward dissipation, PF = f(IF(AV));


sinusoidal current waveform; parameter a = form
factor = IF(RMS)/IF(AV).

May 1995

10
-dIF/dt (A/us)

100

Fig.6. Maximum Qs at Tj = 25C and 150C

Rev 1.000

Philips Semiconductors

Product specification

Rectifier diodes
fast, soft-recovery

BY329X series

BY329

trr / ns

1000

10

Zth j-hs / (K/W)

IF = 10 A
10A
1

1A
1A
100

0.1

PD

tp

Tj = 150 C
Tj = 25 C

10
1

10
-dIF/dt (A/us)

0.01
10us

100

Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25C


and 150C

100

100us

1ms

10ms
tp / s

0.1s

1s

10s

Fig.9. Transient thermal impedance Zth = f(tp)

BY329

Cd / pF

10

1
1

10

VR / V 100

1000

Fig.8. Typical junction capacitance Cd at f = 1 MHz;


Tj = 25C

May 1995

Rev 1.000

Philips Semiconductors

Product specification

Rectifier diodes
fast, soft-recovery

BY329X series

MECHANICAL DATA
Dimensions in mm

10.3
max

4.6
max

Net Mass: 2 g
3.2
3.0

2.9 max

2.8

Recesses (2x)
2.5
0.8 max. depth

6.4
15.8
19
max. max.

15.8
max

seating
plane

3 max.
not tinned
3
2.5
13.5
min.
1
0.4

1.0 (2x)
0.6
2.54

0.9
0.7

0.5
2.5

5.08

Fig.10. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

May 1995

Rev 1.000

Philips Semiconductors

Product specification

Rectifier diodes
fast, soft-recovery

BY329X series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS


These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

May 1995

Rev 1.000

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www.datasheetcatalog.com
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