Unit II

1. Transistor is a _________ terminal device.
b) majority carriers
c) both minority and majority carriers
a) Two
d) all of the above
b) Three
c) Four
Ans: b
d) both (a) and (b)

6. In bipolar trasistor, the current is due to _____ .
Ans: b
a) holes
2. The three terminals of transistor are:
b) electrons
c) both holes and electrons
a) Gate, collector and emitter
d) all of the above
b) Collector, base and source

c) Base, collector and emitter
Ans: c
d) Base, gate and collector

7. BJT IS __________ controlled device.
Ans: c
a) field
3. The transistor means ______ .
b) voltage
c) resistor
a) trasnfer resistor
d) current
b) trans resistor
c) tri resistor
Ans: d
d) none of the above

8. The types of bipolar junction transistors are
Ans: a
a) ppn,npn
4. BJT is a ______ device.
b) pnp, npn
c) npp, ppn
a) unipolar
d) nnp, pnp
b) bipolar
c) multipolar
Ans: b
d) both b and c
9. The middle region of a transistor is called ______.
Ans: b
a) base
5. In Unipolar transistor, the current conduction is due to
_________ .
b) collector
c) emitter
a) minority carriers
Ans: a
14. Doping concentration is highest in ________ of a BJT.
10. The process by which impurities are added to a pure

semiconductor is
a) emitter region
b) collector region
c) base region
a) Diffusing
b) drift
d) all of the above
c) doping
d) mixing
Ans: a
Ans: c
15. The ______ region has highest thickness than all other
regions in a BJT.
11. Base of the transistor is always ___ and ____ doped.
a) base
b) collector
a) thick, lightly
c) emitter
b) thin, lightly
d) all of the above
c) thin, heavily
Ans: b
Ans: b
16. Thea arrow in the transistor symbol indicates the

direction of ____.
12. The collector of a transistor is ______ doped.
a) conventional emitter current

b) electron current in emitter
a) heavily
c) supply current
b) moderately
d) both a and b
c) lightly
Ans: a
Ans: a
17. The arrow in the transistor symbol indicates _______
terminal.
13. In transistors the collector region is larger than the
emitter region for ______.
a) base
b) collector
a) better heat dissipation
c) emitter
b) higher value of
c) better amplification
d) all of the above
Ans: c
Ans: a
18. Transistor has _______ pn junctions.
b) Recombinations
a) one
c) Thermal agitation
b) two
d) None of the above
c) three
Ans: b
Ans: b
23. ________ constitute the dominant current in a npn

transistor.
19. The depletion region at emitter junction in an unbiased

transistor extends more into the _____ region.
a) Holes
b) Electrons
a) collector
c) Both holes and electrons
b) base
c) emitter
Ans: c
Ans: b
24. _______ is the highest current in any bipolar transistor.
20. The depletion region at collector junction in an

unbiased transistor extends more into the base region
because it is _______ doped.
a) IB
b) IC
c) IE
a) heavily
b) moderately
c) lightly
Ans: c
Ans: c
21. Barrier voltage is _____ on the N side.
25. The _____ current of a transistor is neither the largest

nor the smallest.
a) Base
b) Collector
a) positive
c) emitter
b) negative
c) zero
Ans: b
Ans: a
22. _______ of electrons and holes in the base region

constites the base current.
26. Which of the following currents are nearly equal to each

other?
a) IB and IC
b) IE and IC
a) Ionization
c) IB and IE
d) Ib,IC and IE
c) zero
Ans: b
Ans: a
27. For a properly biased transistor, let IC=10mA and
Ie=10.2mA. What is the level of IB?
31. In which region are both the collector-base adn baseemitter junctions forward
a) 0.2A
biased for BJT?
b) 200mA
c) 200A
d) 20.2mA
a) active
b) cut-off
Ans: c
c) saturation
d) all of the above
28. Holes flow constitutes the dominant current in a _______

transistor.
Ans: c
a) npn
b) pnp
c) a and b
32. For the BJT to operate in the saturation region, the

base-emitter juntion must be ______ biased
and the base-collector junction must be ________.

a) forward, forward
Ans: b
b) forward, reverse
c) reverse, reverse
29. For operating in the active region, the emitter junction

should be _____ biased and collector
d) reverse, forward
junction should be ____ biased in BJT.

Ans: a
a) forward, forward
b) reverse, reverse
33. At what region of operation is the base-emitter junction

forward biased and
the base-collector junction reverse biased for BJT?
c) forward, reverse
d) reverse, forward
a) saturation
b) linear or active
Ans: c
c) cut-off
30. The emitter junction is ____ biased for operating BJT in

saturation region.
Ans: b
a) forward
b) reverse
34. Which of the following configurations can a transistor

set up?
a) common base
d) flows when base junction is forward biased
b) common emitter
c) common collector
Ans: b
d) all of the above

39. With rise in temperature ICBO ____.
Ans: d
a) increases linearly
35. In CB configuration a reverse biased collector junction
IC=_____ when the emitter is left open.
b) doubles at every 10 degree celcius

c) decreases linearly
a) 0
b) IE
Ans: b
c) ICBO
40. The a dc is always ________ .
Ans: c
a) unity
36. ICBO flows from ______ to ______ when emitter is open.
b) less than unity

c) greater than unity
a) collector, base
b) base, collector
c) collector, emitter
Ans: b

41. a=_______ .
Ans: a
a) IB/IE
b) IC/IE
37. The ______ carriers constitute current ICBO.
c) IC/IB
a) both minority and majority
b) minority
Ans: b
c) majority
42. smaller the thickness of base, _______ is the value of a
dc.
Ans: b
a) smaller
38. ICBO current is _____.
b) larger
c) constant
a) greater than IC
b) increases with termperature

c) less than ICO
Ans: b
43. The a is the current gain of _______ configuration.
a) IB
b) IC
a) CB
c) IE
b) CC
c) CE
Ans: c
Ans: a
48. In CB configuration dynamic output restance is ______.
44. In CB configuration input resistance is _______ .
a) low
b) medium
a) change in VEB/change in IE
c) high
b) change in VCB/change in IE
c) change in VCB/change in IC
Ans: c
Ans: a
49. alpha ac is the slope of ______ characteristic of transistor

in CB configuration.
45. The input resistance of CB configuration is measured at

constant ______.
a) input
b) output
a) IB
c) transfer
b) IC
c) VCB
d) VCE
Ans: c
Ans: c
50. The transfer characteristics of CB show the relation

between _________.
46. The dynamic output resistance of transistor in CB

configuration is ______ at constant IE.
a) IC and IE
b) IC and IB
a) change in VEB/change in IE
c) IB and IE
b) change in VEB/change in Ic
d) all of the above
c) change in VcB/change in Ic
Ans: a
Ans: c
51. The transfer characteristics of a CB configuration is a

graph of _____.
47. The dynamic output resistance of CB configuration is

measured at constant _____
a) VCB, IC
b) IE, IC
c) VEB, IE
Ans: b
Ans: b
56. The ICEO in terms of ICBO is given by ______.
52. In saturation region the collector current _____.
a) ICEO=(1+)ICBO
b) ICEO=*ICBO+1
a) is independent of IB
c) ICEO=ICBO/(1+)
b) is proportional to IB
c) is equal to IB
Ans: a
Ans: a
57. The current gain of CE configuration is _____.
53. Shape of the transfer characteristics of CB

configuration is ____.
a) dc
b) alpha dc
c) gamma dc
a) non-linear
b) linear
c) parabolic
Ans: b
54. The reverse saturation current of CE configuration with

base open is _______.
Ans: a
58. dc=____.
a) IB/IE
b) IC/IE
c) IC/IB
a) ICEO
b) ICBO
c) ICO
Ans: c

59. The ratio of which two currents is represented by ?
Ans: a
a) IC and IE
55. For CE configuration, in the cut-off region, IC=______.
b) IC and IB
c) IE and IB
a) ICBO
b) ICEO
c) 0
Ans: b
60. The in terms of is given by ______.
a) change in VBE/change in IC
b) change in VBE/change in IB
a) =alpha/(1+alpha)
c) change in VBE/change in IE
b) =alpha/(1-alpha)
c) =(1+alpha)/alpha
Ans: b
Ans: b
65. The value of Ri the CE configuration is _____ that in CB

configuration.
61. in a transistor when IB=105A, IC=2.05mA is ______.
a) lower than
b) higher than
a) 11.5
c) same as
b) 17.5
c) 13.5
d) 19.5
Ans: b
Ans: d
66. The typical value of VBE(sat) in CE configuration for a Si
transistor is _____.
62. Determine the value of a when =100.
a) 0.8V
a) 1.01
b) 0.2V
b) 101
c) 0.9V
c) 0.99
d) cannot be solved with the information provided

Ans: a
Ans: c
67. The value of VBE(active) for a Ge transistor is _____.
63. The input resistance of CE configuration is change in
VBE/change in IB at constant ________.
a) 0.2
b) 0.6
a) VCE
c) 0.7
b) VCB
c) IC
Ans: a
64. The input resistance in CE configuration is ______ at

constant VCE.
Ans: a
68. The value of VBE(cut-off) for Si transistor is _______.
a) 0.7V
b) 0V
d) greater than or equal to
c) 0.3V
Ans: c
Ans: b
73. In _______ region the collector current is proportional to

the base current.
69. The output characteristics of a CE configuration is the

graph of ________.
a) saturation
b) cut-off
a) VCE, VEC
c) active
b) IC, VEC
c) VCE, IC
Ans: c
Ans: c
74. The cut-off region is defined by IB _____ 0A.
70. The value of dynamic output resistance in the CE

configuration is ______ than in CB configuration.
a) >
b) <
a) lower
c) less than or equal to

d) greater than or equal to
b) higher
c) moderate
Ans: c
Ans: a
75. When a transistor is operated with the emitter diode

forward biased and the collector
diode reverse biased, the collector current will be ______.
71. Which of the following region is (are) part of the output

characteristics of a transistor?
a) almost zero
a) Active
b) almost equal to the emitter current

c) infinitely high
b) cut-off
c) saturation
d) many times more than the emitter current
d) all of the above

Ans: b
Ans: d
76. For a BJT, under the saturation condition ________.
72. The saturation region is defined by VCE _____VCE(sat).
a) IC=*IB
b) IC > IB
a) >
b) <
c) IC is idnependent of all other parameters

d) IC < IB
c) less than or equal to
c) 0.6V
Ans: d
77. Which of the statement(s) for the Base-Emitter (B-E)

and the collector-base (C-B)
Ans: b
junctions is/are true?

81. The slope of the transfer characteristics in CE
configuration is indicated by ______.
a) IC is indepent of VCE in the Active region. IC=0 and
VCE=VCC in the cut-off region.
IC=IC(sat) and VCE=0 in the saturation region.
a) dc
b) ac
b) the B-E should be forward biased and the C-B should be

reverse biased in the active
region
c) alphadc
d) alphaac
c) the base current IB controls the collector current IC in

the active, cut-off and
saturation regions
Ans: b
d) all of the above

82. The transfer characteristic in CE configuration is _____.
Ans: b
a) linear
78. A transistor is in saturation if
b) nonlinear
c) parabolic
a) IB>IC/
b) IC/>/IB
c) IC=IB
Ans: a

83. gamma=_____.
Ans: a
a) IC/IB
79. A transistor is in active region if
b) IE/IC
c) IE/IB
a) VCE > VCE(sat)
b) VCE = VCE(sat)
c) VCE < VCE(sat)
Ans: c

84. gamma =______.
Ans: a
a) 1/(1+alpha)
80. Typical value of VCE(sat) is _____.
b) 1/(1-alpha)
c) 1/(1+)
a) 0.7V
b) 0.2V
Ans: b
85. The ____ configuration is the most widely used.
89. Transistor has lowest output impedance in ________

configuration.
a) CB
b) CE
a) CB
c) CC
b) CE
c) CC
Ans: c
Ans: b
90. Current gain of transistor is lowest in ____________
Configuration.
86. The ____ configuration is used as an input stage.
a) CB
a) CB
b) CE
b) CE
c) CC
c) CC

Ans: a
Ans: a
91. The output resistance of CC configuration is _____________
87. The input resistance of CC configuration is ____.
a) Very Low
b) Low
a) CB
c) High
b) CE
d) None of these
c) CC
Ans: a
Ans: c
92. The ___________ of CC configuration is less than unity.
88. The value of input resistance in the CE configuration is

_______ that in CB configuration.
a) Input resistance
b) Current gain
c) Voltage Gain
a) lower than
b) higher than
c) same as
Ans: c
Ans: b
93. Identify which configuration has following

characteristics. Voltage gain is less than one,
Input impedence high and output impedence very low.
a) CB
b) CE
c) CC
Ans: b
d) None of these
98. ________________ transistor configuration provides the
highest input impedence.
Ans: c
a) CB
94. _________ amplifier configuration provides both high
current and voltage gain.
b) CE
a) CB
c) CC
b) CE
d) None of these
c) CC
d) None of these
Ans: c
Ans: b
99. The ___________ configuration is used as an output stage.

a) CB
95. The ___________ configuration is used for impedence

matching.
b) CE
c) CC
d) None of these
a) CB
b) CE
Ans: c
c) CC
d) None of these
100. The Q point is also known as ______________.
Ans: c
a) open point
b) operating point
96. As compared to a CB amplifier, a CE amplifier has

__________
a) Lower current amplification
c) DC point
d) Breakdown point
Ans: b
b) Higher current amplification

c) Lower input resistance
101. The slope of a Dc load line represents_____________.
d) higher input resistance

a) Collector resistance
Ans: b
b) reciprocal of DC load resistance

c) reciprocal of AC load resistance
97. In ______________ configuration there is phase shift of 180

degree between input and output.
a) CB
Ans: b
b) CE
c) CC
d) None of these
102. The position of Q point on the DC load line should be

______________.
a) Stable
a) Voltage
b) unstable
b) change in beta
c) bistable
c) Current
d) tristable
Ans: a
Ans: b
103. In CE configuration, co-ordinates of Q point

are____________.
107. Which of the following factor affects the Q point

stability?
a) Vce, Ib
a) Temperature
b) Vcb,Ic
b) Bypass Capacitor
c) Vce,Ic
c) Cuopling Capacitor
d) Vce,Ie
Ans: c
Ans: a
104. If the operating point of an npn transistor amplifier is

selected in saturation region,
108. The transistor acts as an amplifier in the ______ region.
it is likely to result in________________.

a) thermal runway of transistor
a) Cut off
b) Active
b) clipping of output in the positive half of the input signal

c) need for high DC collector supply
c) Saturation
d) clipping of output in the negative half of the input signal

Ans: b
Ans: b
105.In CE configuration, the upper end of DC load line is

called the ____________points and the
109. The transistor is operatde as a open switch in ______

region.
a) Cut off
lower end is the ____________ point.

b) Active
c) Saturation
a) Q, base
b) base, Q
c) Saturation, Q
Ans: a
d) cut-off, Q
Ans: c
110. The transistor may be used as a switch so that when it

is in the
saturated state its on resistance is very _______ and in
the cut-off state
106. _____ has an important effect on shifting of the

operating point.
its off resistance is very ________.
a) high, high
b) has three connections called the base, emitter and

collector
b) low, low
c) low, high
c) is like a switch in that it is used to turn a circuit on and

off
d) high, low
d) all of the above
Ans: c
Ans: d
111. We can not operate the transistor in ______ region for

the switching applications.
115. The output voltage of an ampifier is 5V when an input

voltage is 50mV.
Its voltage gain is _______.
a) cut-off
b) active
a) 100
c) saturation
b) 250
d) all of the above
c) 1000
Ans: b
Ans: a
112. The transistor is operated as a close switch in ______
region.
116. The ideal voltage amplifier must have ______ input

resistance.
a) cut-off
b) active
a) low
c) saturation
b) high
d) all of the above
c) infinite
Ans: b
Ans: c
113. Transistor is used as a switch in ______.
117. The ideal value of Ro is ______.
a) an amplifier
b) logic gate
a) zero
c) linear DC power supply
b) infinite
c) very low
Ans: b
Ans: a
114. A transistor __________.
118. Ideally the bandwidth of an amplififer should be _____.
a) is similar to a relay in that it uses a small amount of
current to
a) infinite
control a larger amount of current flow.
b) low
c) as high as possible
Ans: c
Ans: a
123. The voltage gain of an emitter follower is ______.
119. The frequency of Vo of an amplifier is _______.
a) 1
b) less than 1
a) less than that of Vin
c) greater than 1
b) same as that of Vin
c) greater than that of Vin

Ans: b
Ans: b
124. The _______ amplifier can be used as buffer.
120. Ideallly voltage gain of an ampllifier should be _______.
a) CB
b) CE
a) zero
c) CC
b) high
c) infinite
Ans: c
Ans: c
125. In ________ configuration/s there is phase shift of 0

degree
between input and output.
121. The current gain of ______ amplifier is always less than

unity.
a) CB
a) CB
b) CE
b) CE
c) CC
c) CC
d) CB and CC

Ans: d
Ans: a
126. The output of ______ amplifier follows the input. Hence
it is
122. The voltage gain of _____ amplifier is always less than
unity.
also called emitter follower.
a) CB
a) CB
b) CE
b) CE
c) CC
c) CC
Ans: c
Ans: c
127. For an CC amplifier, the input is applied to _____ and

the output
131. Which of the follwing applies to MOSFETs?
is obtained at _______.
a) No direct electrical connection between the gate
terminal and the channel
a) emitter, base
b) Desirable high input impedance
b) collector, base
c) Uses metal for the gate, drain and source connections
c) base, emitter
d) All of the above

Ans: d
Ans: c
132. How many terminals a MOSFET has?
128. For the CE amplifier the ac input is applied to _________.
a) 2
a) emitter
b) 3
b) base
c) 4
c) collector
d) 3 or 4

Ans:
Ans: b
133. Which of the following transistor(s) has(have)
depletion and enhancement types?
129. MOSFET is a _____ controlled device.
a) BJT
a) current
b) JFET
b) voltage
c) MOSFET
c) field
d) all of the above
Ans: d
Ans: b
134. VLSI technology relies on _______.
130. It is the insulating layer of ______ in the MOSFET
construction that
accounts for the very desirable high input impedance of
the device.
a) MOSFET
b) BJT
a) SiO
c) diode
d) none
b) GaAs
c) SiO2
Ans: c
d) HCI
135. For making n-channel enhancement MOSFET the

substrate taken will be of type
a) INFET
b) IGFET
c) IMOSFET
a) p
b) n
d) IGMOSFET
c) either p or n
d) none of these
Ans: a
136. The input resistance of MOSFET is ____ that of BJT.
Ans: b
140. In a enhacement mode MOSFET, the channel is ______.
a) always present
b) always absent
a) lower than
c) initially absent
b) higher than
c) same as
Ans: c
141. For an n-channel EMOSFET VT is ____.
Ans: b
a) negative
137. A MOSFET has a high input _____.
b) zero
c) positive
a) current
b) resistance
c) inductance
Ans: b
138. The packaging density of MOSFETs is ______ as

compared to BJT.
Ans: c
142. For an EMOSFET ID=0 for ________.
a) VGS > VT
b) VGS < VT
c) VDS < VT
a) less
b) high
c) same
Ans: b
Ans: b
143. In order to operate EMOSFET as an amplifier we have

to operate
it in ___ region.
139. Because of insulated gate, MOSFET is also called

_______.
a) ohmic
b) saturation
c) cut-off
Ans: c
Ans: b
148. In n-channel EMOSFET, the conduction begins when

_____.
144. The EMOSFET acts as a ____ for VGS < VT.
a) VGS=VT
b) VDS=VP
a) open switch
c) VDS=VDD
b) closed switch
c) resistor
Ans: a
Ans: a
149. In enhancement type MOSFET, channel is present
initially.
145. For an n-channel EMOSFET,ID _____ for VGS=0.
a) The statement is false since channel is enhaced by
applyuing gate voltage
a) zero
b) IDSS
c) infinite
b) The statement is true

c) No concept of channel is there
d) All the above are false

Ans: a
Ans: a
146. In n-channel EMOSFET channel is ______ when VGS >

VT.
150. For an EMOSFET, the relation between ID and VGS is

______.
a) ID=k(VGS-VT)
a) disappeared
b) induced
c) none of these
b) ID=k2(VGS-VT)
c) ID=k(VGS-VT)2
d) all of the above

Ans: c
Ans: b
147. By connecting drain and gate terminals together

EMOSFET can be used as ______.
a) amplifier
b) open switch
c) resistor
151. The current gain of a transistor is defined as the ratio

of the collector
current to the _____.
a) base current
b) emitter current
c) supply current
d) collector current
Ans: c
Ans: a
156. Ignoring the bulk resistance of the collector diode, the

collector-emitter
saturation voltage is _____.
152. The graph of current gain versus collector current

indicates that the current gain _______.
a) 0V
a) is constant
b) a few tenths of a volt
b) varies slightly
c) 1V
c) varies significantly
d) supply voltage
d) equals the collector current divided by the base current

Ans: a
Ans: b
157. Three different Q points are shown on a load line. The
upper Q point represents the ____.
153. When the collector current increases, what does the
current gain do?
a) minimum current gain
a) decreases
b) intermediate current gain
b) stays the same
c) maximum current gain
c) increases
d) cut-off point
d) any of the above

Ans: c
Ans: d
158. If a transistor operates at the middle of the load line,
a decrease in the base
154. When the base resistor increases, the collector
voltage will probably ________.
resistance will move the Q point ____.
a) decrease
a) down
b) stays the same
b) up
c) increase
c) no where
d) do all of the above
d) off the load line
Ans: c
Ans: b
155. If the base resistor is very small, the transistor will

operate in the _______.
159. If the base supply voltage increases, the Q point

moves ________.
a) cut off region
a) down
b) active region
b) up
c) saturation region
c) no where
d) all of the above
Ans: b
160. Suppose the base restor is open. The Q point will be

______.
164. The collector current is 1.5mA. If the current gain is

50, the base current is ______.
a) 3 A
b) 30 A
a) in the middle of the load line
c) 150 A
b) at the upper end of the load line
d) 3 mA
c) at the lower end of the load line

Ans: b
Ans: c
165. The base current is 50A. If the current gain is 100,

the collector current is closest in value to ______.
161. If the base supply voltage is disconnected, the

collector-emitter voltage will equal _______.
a) 50A
b) 500A
a) 0V
c) 2mA
b) 6V
d) 5mA
c) 10.5V
d) collector supply voltage
Ans: d
Ans: d
166. When the Q point moves along the load line, VCE
decreases when the collector current ________.
162. If the base resistor has zero resistance, teh transistor

will probably be _______.
a) decreases
b) stays the same
a) saturated
c) increases
b) in cut-off
c) destroyed
Ans: c
Ans: c
167. When there is no base current in a transistor switch,

teh output voltage from the transistor is ____.
163. If the collector resistor opens in a base-biased circuit,

the load line will become ______.
a) low
b) high
a) horizontal
c) unchanged
b) vertical
d) unknown
c) useless
d) flat
Ans: b
Ans: a
168. A circuit with a fixed emitter current is called ______.
a) base bias
c) unchanged
b) emitter bias
d) unknown
c) transistor bias
d) two supply bias
Ans: a
Ans: b
173. When the current gain increases from 50 to 300 in an

emitter-biased circuit,
the collector current ________.
169. The first step in analyzing emitter-based circuits is to

find the ________.
a) remains almost the same
a) base current
b) decreases by a factor of 6
b) emitter current
c) increases by a factor of 6
c) supply current
d) is zero
d) collector current
Ans: a
Ans: b
174. If the emitter resistance increases, the collector
voltage ______.
170. If the current gain is unknown in an emitter-biased
circuit, you cannot calculate the _____.
a) decreases
a) emitte voltage
b) stays the same
b) emitter current
c) increases
c) collector current
d) breaks down the transistor
d) base current
Ans: c
Ans: d
175. If the emitter resistance decreases, the _____.
171. If the emitter resistor is open, teh collector voltage is
________.
a) Q point moves up
b) collector current decreases
a) low
b) high
c) Q point stays where it is

d) current gain increases
c) unchanged
d) unknown
Ans: a
Ans: b
176. When using a DMM (Digital multimeter) to test a
transistor, an approximate reading
172. If the collector resistor is open, the collector voltage is
_______.
of 0.7V will be found with how many polarity

connections?
a) low
a) One
b) high
b) Two
c) Three
b) least for emitter region
d) None
c) largest for emitter region

d) largest for collector region
Ans: b
Ans: c
177. What DMM polarity connection is needed on an npn
transistor's base to get a
0.7V reading?
a) positive
181. When NPN transistor is used as amplifier
a) electrons move from base to emitter

b) electrons move from emitter to base
b) negative
c) either positive or negative
c) electrons move from collector to base

d) holes move from base to emitter
d) unknown
Ans: b
Ans: a
182. The base is made thin and lightly doped because
178. When testing an npn transistor using an ohmmeter,
the collector-emitter resistance
will be low when ________.
a) about 95% of the charge carriers may cross

b) about 100% of the charge carriers may cross
a) The collector is positive in respect to the emitter
c) the transistors can be saved from large currents
b) The emitterr is positive in respect to the collector
d) none of these
c) The transistor is normal

d) The transistor is defective
Ans: a
Ans: d
183. The current gain of common base npn transistor is

0.96. What is the current
179. If a transistor operates at the middle of the load line,

a decrease in the
current gain will move the Q point ________.
gain if it is used as common emitter emplifier?
a) 16
b) 24
a) down
c) 20
b) up
d) 32
c) no where
Ans: b
Ans: a
184. In a common emitter circuit, the collector current is

0.9 mA, base current is 100A.
The value of current gain and emitter current is ______.
180. The concentration of impurities in a transistor:

a) 49 and 2mA
a) equal for emitter, base and collector
b) 9 and 1mA
and input resistance is 500 ohm, the voltage gain in

amplifier is _____.
c) 0.9 and 0.1 mA

d) none of these
a) 160
b) 200
Ans: b
c) 300
d) 400
185. In common base mode of transistor, the collector

current is 5.488mA and the emitter
current is 5.6 mA and the emitter current is ____.
a) 48
Ans: d
189. A common emitter amplifier is designed with npn

transistor with alpha=0.99, the input impedance
b) 49
c) 50
is 1 Kohm and load is 10Kohm. The voltage gain will be

_______.
d) 51
a) 9.9
Ans: b
b) 99
c) 990
186. In NPN transistor, the collector current is 24mA. If 80%

of the electrons reach
d) 9900
collector, the base current in mA is

Ans: c
a) 36
b) 26
190. For common base transistor teh numerical value is

least for _______.
c) 16
d) 6
a) voltage gain
b) power gain
Ans: d
c) resistance gain
d) current gain
187. In a transistor circuit base current is increased by

50A, the collector current increases
Ans: d
by 1mA. The current gain of teh transistor is
a) 20
b) 40
c) 60
191. In a common emitter amplifier output resistance is

5000 ohm and input
resistance is 2000 ohm. If the peak value of signal
voltage is 10mV and
B=50, the peak value of voltage output is _____.
d) 80
a) 5 X 10^-6 V
Ans: a
b) 2.5 X 10^-4 V
c) 1.25V
188. A common emitter transistor amplifier has a current

gain of 50. If the load resistance is 4Kohm
d) 125V
Ans: c
196. In a transistor as an amplifier, the reverse saturation
current:
192. If R1 is the input resistance and R2 is the output
resistance of the voltage
gain A in the common emitter configuration is ________.
a) Doubles for every degree C rise in temperature

b) Doubles for ever 10 degree C rise in temperature
a) alpha(R2/R1)
c) Decreases linearly with temperature
b) (R2/R1)
d) Increase linearly with temperature
c) alpha
d)
Ans: b
Ans: b
197. Base to emitter voltage in forward biased transistor

decreases with the increase of
temperature at the following rate:
193. Which terminal represents the control input of a

bipolar transistor?
a) 2.5 mV/degree C
a) emitter
b) 25 mV/degree C
b) collector
c) 0.25 mV/degree C
c) gate
d) 0.6 mV/degree C
d) base
Ans: a
Ans: d
198. The number of depletion layers in a transistor are
________.
194. Which of the following expressions represents the DC
current gain of a bipolar transistor?
a) two
a) IC/IB
b) three
b) dIC/dIB
c) four
c) IC/VBE
d) dIC/dVBE
Ans: a
Ans: a
199. The emitter of a transistor is _____ doped.
195. Which of the following expressions represents the
transconductance of a bipolar transistor?
a) moderately
b) heavily
a) dIC/dIB
b) IC/IB
c) lightly
c) dIC/dVBE
d) IC/VBE
Ans: b
Ans: c
200. The input impedance of a transistor is ____ as

compared to MOSFET.
b) 1
c) less than 1
a) low
d) 0
b) high
c) very high
Ans: a
d) none of above
205. Transistor biasing represents ____ condition.
Ans: a
a) ac
b) dc
201. In an NPN tranistor, ______ are the minority carrier.
c) both ac and dc
a) electron
b) holes
Ans: b
c) donor ions
d) acceptor ions
206. Transistor biasing is generally provided by a ________.
Ans: b
a) biasing circuit
202. In a transistor _____.
b) biasing battery
c) diode
a) IB=IC+IB
b) IC=IE+IB
c) IE=IC+IB
Ans: a
d) IE=IC-IB
207. The point of intersection of DC and AC load lines
represents _______.
Ans: c
a) current point
203. The value of alpha of a transistor is ________.
b) operating point
c) voltage gain
a) 0
b) 1
c) more than 1
Ans: b
d) less than 1
208. The phase difference between the input and output
voltage in a common
Ans: d
base arrangement is ________.
204. The value of of a transistor is ________.
a) 90
b) 180
a) between 20 and 500
c) 0
c) multipolar
Ans: c
Ans: a

voltage in a common
213. In bipolar transistor, the current flows due to _____.
emitter arrangement is ________.

a) 0
c) both, majority and minority carriers
b) 180
c) 90
d) 270
Ans: c
Ans: b
214. In MOSFET, the current flows due to _____.
voltage in a common
collector arrangement is ________.
c) both, majority and minority carriers
a) 0
b) 90
c) 180
Ans: b
d) 270
Ans: a
211. The early effect in a bipolar transistor is caused by:
215. Transistor device is used in the application such as

________.
a) switch
b) amplifier
a) Large collector-base reverse bias
c) oscillator
d) above all
b) base width modulation

c) large emitter-base forward bias
Ans: d
d) increase in junction temperature
Ans: b
216. When transistor is unbiased then due to following, two

diffrent depletion
regions form in the transistor at two respective junction
_______.
212. MOSFET is a ______ device.

a) only drift process
a) unipolar
b) drift and diffusion process
b) bipolar
c) only diffusion process
d) diffusion and then drift process

Ans: a
Ans: c
221. Input resistance for common collector configuration is
_______.
217. In common base configuration, the width of depletion
region also increases,
which reduces the electrical base width, this effect is
known as ____.
a) 5 Kohm
b) 50 Kohm
a) hall effect
c) 500 Kohm
d) 5 Mohm
b) skin effect
c) early effect
Ans: c
d) piezo-electric effect
Ans: c
218. Output characteristics of common base configuration

gives
222. Input resistance for common emitter configuration is

_______.
a) 40 Kohm
b) 400 Kohm
a) skin effect
c) 4 Mohm
d) 40 Mohm
b) early effect
c) reach through effect
Ans: a
d) hall effect
Ans: c
223. Output resistance for common collector configuration

is _______.
219. Early effect and base width modulation effect is ______.
a) 5 ohm
b) 50 ohm
a) same
c) 5 Kohm
b) different
d) 500 Kohm
c) not related to each other

d) both damages the transistor
Ans: b
Ans: a
224. Voltage gain in common base configuration is _________.
220. Input resistance for common base configuration is

_______.
a) always above unity

b) unity
c) less than unity
a) 20 ohm
b) 200 ohm
d) not any above
c) 2 Kohm
d) 2 Mohm
Ans: a
a) IC/IE
225. Voltage gain in CE configuration is _______.
b) IC/IB
c) IE/IC
a) less than unity
b) unity
c) always above unity
Ans: d
d) not any above

230. Current gain in CB configuration is _______.
Ans: c
a) unity
226. Voltage gain in CC configuration is ________.
b) less than unity

c) greater than unity
a) less than unity
d) not any above
b) unity
c) always above unity
Ans: b
d) not any above

231. Current gain in CE configuration is _______.
Ans: a
a) 25 to few hundreds
227. Current amplification factor alpha dc is given by _____.
b) less than 10
c) 10 to 15
a) IC/IE
d) unity
b) IE/IC
c) IC/IB
Ans: a
d) IE/IB
232. Current gain in CC configuration is _______.
Ans: a
a) less than unity
228. Current amplification factor dc is given by _____.
b) unity
c) 25 to few hundreds
a) IC/IE
d) less than 10
b) IE/IC
c) IC/IB
Ans: c
d) IE/IB
233. Input resistance for Common Emitter Configuration is
_______.
Ans: c
a) 100 ohm
229. Current amplification factor gamm dc is given by _____.
b) 1Kohm
c) 1 Mohm
d) 100Kohm
238. MOSFETs are also called _________.
Ans: b
a) IGFETs
234. For voltage amplifier function, suitable configuration is
_______.
b) BJTs
c) UJTs
a) CE configuration
b) CC configuration
c) CB configuration
Ans: a

239. ______ and _____ are two basic types of MOSFETs.
Ans: c
a) NPN and PNP
b) IGFET and JFET
235. The drain characteristics of MOSFET is _______.
c) DMOSFET and EMOSFET
a) VDS to ID
b) VGS to ID
Ans: c
c) both of the above
240. Output resistance for Common Base Configuration is
_______.
Ans: a
a) 1 Kohm
236. The transfer characteristics of MOSFET is _____.
b) 1 Mohm
c) 10 Kohm
a) VDS to ID
d) 100 Mohm
b) VGS to ID
c) both of the above
Ans: b
237. MOSFET is ______.
a) multilayer oxide semiconductor field effect transistor

b) most oxidised semiconductor field effect transistor
c) metal oxide semiconductor field effect transistor
d) none off the above
Ans: c
Ans: b

Unit II

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Unit II

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1. Transistor is a _________ terminal device.

d) all of the above

d) both (a) and (b)

a) Gate, collector and emitter

d) all of the above

b) Collector, base and source

d) Base, gate and collector

d) none of the above

d) none of the above

14. Doping concentration is highest in ________ of a BJT.

10. The process by which impurities are added to a pure

d) all of the above

11. Base of the transistor is always ___ and ____ doped.

d) all of the above

16. Thea arrow in the transistor symbol indicates the

12. The collector of a transistor is ______ doped.

a) conventional emitter current

a) better heat dissipation

d) None of the above

23. ________ constitute the dominant current in a npn

19. The depletion region at emitter junction in an unbiased

c) Both holes and electrons

d) none of the above

24. _______ is the highest current in any bipolar transistor.

20. The depletion region at collector junction in an

d) none of the above

d) none of the above

21. Barrier voltage is _____ on the N side.

25. The _____ current of a transistor is neither the largest

22. _______ of electrons and holes in the base region

26. Which of the following currents are nearly equal to each

biased for BJT?

28. Holes flow constitutes the dominant current in a _______

32. For the BJT to operate in the saturation region, the

d) none of the above

29. For operating in the active region, the emitter junction

junction should be ____ biased in BJT.

33. At what region of operation is the base-emitter junction

30. The emitter junction is ____ biased for operating BJT in

34. Which of the following configurations can a transistor

d) flows when base junction is forward biased

d) all of the above

b) doubles at every 10 degree celcius

b) less than unity

d) none of the above

d) none of the above

d) none of the above

b) increases with termperature

43. The a is the current gain of _______ configuration.

d) none of the above

48. In CB configuration dynamic output restance is ______.

44. In CB configuration input resistance is _______ .

d) none of the above

49. alpha ac is the slope of ______ characteristic of transistor

45. The input resistance of CB configuration is measured at

d) none of the above

50. The transfer characteristics of CB show the relation

46. The dynamic output resistance of transistor in CB

d) all of the above

51. The transfer characteristics of a CB configuration is a

47. The dynamic output resistance of CB configuration is

d) none of the above

56. The ICEO in terms of ICBO is given by ______.

11. Base of the transistor is always _ and __ doped.