High Power Factor Soft Switched

98
IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 21, NO. 1, JANUARY 2006
High-Power-Factor Soft-Switched Boost Converter

Yungtaek Jang, Senior Member, IEEE, Milan M. Jovanovic, Fellow, IEEE, Kung-Hui Fang, and Yu-Ming Chang
AbstractA novel implementation of the high-power-factor

(HPF) boost converter with active snubber is described. The
snubber circuit reduces the reverse-recovery-related losses of the
rectifier and also provides zero-voltage switching for the boost
switch and zero-current switching for the auxiliary switch. The
performance of the proposed approach was evaluated on an
80-kHz, 1.5-kW, universal-line range, HPF boost converter. The
proposed technique improves the efficiency by approximately 2%
at full load and low line.
Index TermsAuxiliary switch, boost converter, constant-frequency, power-factor correction (PFC), zero-current switching
(ZCS), zero-voltage switching (ZVS).
I. INTRODUCTION
HE boost converter topology has been extensively used in

various ac/dc and dc/dc applications. In fact, the front end
of todays ac/dc power supplies with power-factor correction
(PFC) is almost exclusively implemented with boost topology.
Also, the boost topology is used in numerous applications with
battery-powered input to generate a high output voltage from a
relatively low battery voltage.
At higher power levels, the continuous-conduction-mode
(CCM) boost converter is the preferred mode of operation for
the implementation of a front end with PFC. As a result, in
recent years, significant effort has been made to improve the
performance of high-power boost converters. The majority
of these development efforts have been focused on reducing
the adverse effects of the reverse-recovery characteristic of
the boost rectifier, especially for the conversion efficiency and
electromagnetic compatibility (EMC).
Generally, the reduction of reverse-recovery-related losses
and EMC problems require that the boost rectifier is softly
switched off, which is achieved by controlling the turn-off
rate of its current [1]. So far, a number of soft-switched boost
converters and their variations have been proposed [2][16].
All of them use additional components to form passive snubber
or active snubber circuits that control the turn-off di/dt rate of
the boost rectifier. The passive snubber approaches in [2][4]
use only passive components such as resistors, capacitors,
inductors, and rectifiers, whereas active snubber approaches
employ one or more active switches.
Although passive lossless snubbers can marginally improve
efficiency, their performance is not good enough to make them
Manuscript received November 8, 2004; revised June 3, 2005. This work
was presented at INTELEC04, Chicago, IL, September 1923, 2004. Recommended by Associate Editor H. S. H. Chung.
Y. Jang and M. M. Jovanovic are with the Power Electronics Laboratory,
Delta Products Corporation, Research Triangle Park, NC 27709 USA (e-mail:
ytjang@deltartp.com).
K.-H. Fang and Y.-M. Chang are with Delta Electronics, Inc., Taoyuan,
Taiwan, R.O.C.
Digital Object Identifier 10.1109/TPEL.2005.861201
viable candidates for applications in high-performance PFC circuits. Generally, they suffer from increased component stresses
and are not able to operate with the soft switching of the boost
switch, which is detrimental in high-density applications that require increased switching frequencies.
The simultaneous reduction of reverse-recovery losses and
the soft switching of the boost switch can be achieved by active snubbers. So far, a large number of active snubber circuits
have been proposed [5][16]. The majority of them offer the
soft turn off of the boost rectifier, ZVS of the boost switch, and
hard switching of the active-snubber switch [5][9]. However, a number of active-snubber implementations feature softswitching of all semiconductor components, i.e., in addition to
the soft turn off of the boost rectifier, the boost switch and the
active-snubber switch operate with ZVS or ZCS [10][16].
In this paper, a novel implementation of the soft-switched
boost converter with active snubber is described. The major feature of these circuits is the soft switching of all semiconductor
components. Specifically, the boost rectifier is switched off with
a controlled turn-off di/dt rate, the boost switch is turned on with
ZVS, and the auxiliary switch in the active snubber is turned
off with ZCS. As a result, switching losses are reduced, which
has beneficial effects on the conversion efficiency and EMC
performance.
II. SOFT-SWITCHED PFC BOOST CONVERTER
Fig. 1 shows a conceptual implementation of the proposed
soft-switched boost converter with ZCS of auxiliary switch .
conAfter auxiliary switch is turned on, snubber inductor
trols the rate of change of current in the rectifier to reduce reverse-recovery-related losses in boost rectifier . In addition,
since the auxiliary-switch current cannot increase immediately
, the auxiliary switch turns on
because of snubber inductor
with ZCS. During the period when auxiliary switch is turned
on, snubber inductor
and output capacitance
of boost
switch form a resonant circuit, hence the voltage across boost
switch falls to zero by resonant ringing. As a result, boost
switch turns on when its drain-to-source voltage is zero.
To reset the snubber inductor current, it is necessary to
in the loop consisting of snubber
provide reset voltage V
inductor
and conducting switches S and , as shown in
Fig. 1(a). As can be seen from Fig. 1(b), auxiliary switch
can achieve ZCS if it is turned off after reset voltage V
reduces snubber-inductor current
to zero. Reset voltage
V
can be generated either by a resonant capacitor [12],
[16] or by the winding of a low-power auxiliary transformer
[10], [14], [15].
The proposed implementation of the soft-switched boost
circuit is shown in Fig. 2. The circuit consists of voltage source
, boost switch , boost rectifier ,
V , boost inductor
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JANG et al.: HIGH-POWER-FACTOR SOFT-SWITCHED BOOST CONVERTER
99
Fig. 2. Proposed soft-switched boost converter.
Fig. 1. Conceptual implementation of soft-switched boost converter with ZCS

of snubber switch S : (a) conceptual circuit and (b) key waveforms during
turn-on of switch S .
energy-storage capacitor
, load
, and the active snubber
circuit formed by auxiliary switch
, snubber inductor
, transformer TR, blocking diode
, and clamp circuit
.
To facilitate the explanation of the circuit operation, Fig. 3
shows a simplified circuit diagram of the circuit in Fig. 2. In
and clamp
the simplified circuit, energy-storage capacitor
capacitor
are modeled by voltage sources V and V ,
and
are
respectively, by assuming that the values of
large enough so that the voltage ripples across the capacitors are
small compared to their dc voltages. In addition, boost inductor
is modeled as constant current source
by assuming
is large enough so that during a switching
that inductance
cycle the current through it does not change significantly. Also,
and
transformer TR is modeled by magnetizing inductance
an ideal transformer with turns ratio
. Since the
leakage inductance of transformer TR is connected in series
, it is not separately shown in Fig. 3.
with snubber inductor
Finally, it is assumed that in the on state, semiconductors
exhibit zero resistance, i.e., they are short circuits. However,
the output capacitance of the switches, as well as the junction
capacitance and the reverse-recovery charge of the rectifier are
not neglected in this analysis.
To further facilitate the analysis of operation, Fig. 4 shows
the topological stages of the circuit in Fig. 3 during a switching
cycle, whereas Fig. 5 shows its key waveforms. The reference
directions of currents and voltages plotted in Fig. 5 are shown
in Fig. 3.
Fig. 3. Simplified circuit diagram of the proposed converter shown in Fig. 2

along with reference directions of key currents and voltages.
As can be seen from the timing diagram of the drive signals

for switches and S shown in Fig. 5(a) and (b), in the proposed
is turned on prior to the turn on of
circuit, auxiliary switch
is turned off before boost switch
switch . However, switch
is turned off, i.e., the proposed circuit operates with overlapping drive signals for the switches.
Prior to turn on of switch
at
, switches S and
are
flows through boost rectifier
open and entire input current
into load
. After switch
is turned on at
, current
starts flowing through winding
of transformer TR, inducing
the flow of current in winding , as shown in Fig. 4(a). Because, during this stage, output voltage V is impressed across
, transformer winding voltages v and v are given
winding
by
v
and
V
(1)
nV
(2)
1 for proper operation

where it is required that
of the circuit.
Since v is constant, voltage applied across snubber inductor
is also constant so that current increases linearly with a
slope of
V
nV
(3)
100
Fig. 4.
(g) [T
Topological stages during a switching period of the proposed circuit: (a) [T

], (h) [T
T ], (i) [T T ], (j) [T T ], and (k) [T
T ].
0T
At the same time, magnetizing current

a slope given by
V
so that auxiliary switch current
also increases with
(4)
is
(5)
because
.
linAs current linearly increases, boost rectifier current
early decreases at the same rate since the sum of and
is
, i.e.,
. Thereequal to constant input current
fore, in the proposed circuit, the turn-off rate of the boost rectifier
V
(6)
0T
, (b) [T
0T
, (c) [T
0T
, (d) [T
0T
, (e) [T
0T
, (f) [T
0T
can be controlled by proper design of turns ratio n of trans. Typically, for todays
former TR and snubber inductor
fast-recovery rectifiers, the turn-off
rate should be kept
around 100 A S.
when boost
The topological stage in Fig. 4(a) ends at
falls to zero. Due to a stored charge in the
rectifier current
rectifier, the rectifier current continues to flow in the negative direction, as shown in Figs. 4(b) and 5(j). Generally, for a properly
and turns ratio n, this reverse-reselected snubber inductor
covery current is substantially reduced compared to the corresponding current in a circuit without the boost rectifier turn-off
rate control. After the stored charge is removed from the
in Fig. 5, the rectifier regains its
rectifier, which occurs at
voltage blocking capability and the circuit enters the topological
stage shown in Fig. 4(c). During this stage, junction capacitance
of boost rectifier is charged and output capacitance
of boost switch discharged through a resonance between parand
with snubber inductor . The
allel connection of
101
condition needed for the zero-voltage turn on of switch , it is

necessary that at the end of the resonance at
v
(11)
of transformer TR to
which limits maximum turns ratio
(12)
0.5 is selected, output capacitance
If a turns ratio of
of boost switch can be always discharged to zero regardless
of the load and line conditions. Once the capacitance is fully
, current continues to flow through the
discharge at
antiparallel diode of boost switch , as shown in Fig. 4(d). Because during this topological stage voltage v is impressed in the
, current starts
negative direction across snubber inductor
linearly decreasing at the rate given by
nV
Fig. 5. Key waveforms of the proposed converter.
expressions for boost-switch voltage v and snubber-inductor

current during this resonance are
V
(7)
and
v
where characteristic impedance

are defined as
quency
(8)
and resonant angular fre-
and
(9)
as illustrated in Fig. 5(e). As a result, auxiliary-switch current

also starts linearly decreasing, whereas boot-switch current
starts linearly increasing from a negative peak, as shown in
Fig. 5(f) and (g). To achieve ZVS of boost switch , it is necessary to turn on boost switch before its current becomes pos, i.e., while current
is flowing through the
itive at
antiparallel diode of switch .
, boost-switch
With boost switch turned on before
continues to flow through closed switch after it
current
, as shown in Figs. 4(e) and 5(g).
becomes positive at
In this topological stage, current continues to decrease lincontinues to
early toward zero, while boost-switch current
linearly increase at the same rate. When current becomes zero
, boost-switch current
reaches
so that the enat
tire input current
flows through boost switch , as shown in
only carries a
Fig. 4(f). At the same time, auxiliary switch
magnetizing current. If the magnetizing inductance of the transformer is made high, the magnetizing current can be minimized,
so that
i.e., it can be made much smaller than input current
auxiliary switch can be turned off with virtually zero current.
is turned off with near ZCS at
When auxiliary switch
, magnetizing current
begins charging output capacitance
of auxiliary switch , as shown in Fig. 4(g). When
reaches clamp voltage
voltage v across auxiliary switch
V , where V is the voltage across clamp capacitor
,
V
is commutated into voltage source V
magnetizing current
through clamping diode
, which models the clamp circuit.
The switching and conduction losses of clamping diode
are negligible because magnetizing current
is designed to
be very small. As shown in Fig. 4(h), during this stage, negative
voltage V resets the magnetizing current with a rate
(10)
From (8) it can be seen that to completely discharge output
capacitance
of boost switch and, therefore, create the
(13)
until magnetizing current
becomes zero at
(14)
.
102
After transformer TR is reset at

, the circuit stays in
the topological stage shown in Fig. 4(i) until boost switch is
and the input current is commutated from
opened at
switch to its output capacitance
, as shown in Fig. 4(j).
charging with constant current
, voltage v is
Due to
and input
increasing linearly until it reaches V at
is instantaneously commutated to boost rectifier, as
current
shown in Fig. 4(k). The circuit stays in the topological stage in
when auxiliary switch
is turned on
Fig. 4(k) until
again.
stress in the conventional boost converter without a snubber.

However, the voltage stress of the auxiliary switch is
It should be noted that in the previous analysis the junction cawas neglected since it has no significant
pacitance of diode
effect on the operation of the circuit. In fact, this capacitance
plays a role only during a brief interval after current reaches
. Specifically, after
, the junction capaczero at
itance of diode
and snubber inductor
resonate creating
a small negative current that makes auxiliary-switch current
flow in the negative direction through the antiparallel diode
of switch . Due to the conduction of its antiparallel diode,
auxiliary switch voltage v does not immediately start to inis turned off at
, i.e., shortly after
crease after switch
falls to zero. Instead, the rise of v is briefly delayed until
the current through the antiparallel diode resonates back to zero.
This delay has no tangible effect on the operation or the performance of the circuit.
as illustrated in Fig. 5(c) and (f).

According to (15), the voltage stress of auxiliary switch
can be controlled by the selection of clamp voltage V . Generally, this voltage is determined by the energy stored in magneduring the conduction period of auxiliary
tizing inductance
. If capacitor
is
switch and the value of clamp resistor
selected large enough so the ripple of voltage across it is much
smaller than the average value, voltage V can be calculated
from
In summary, the major feature of the proposed circuit is the

soft-switching of all semiconductor devices. Specifically, boost
is turned
switch is turned on with ZVS, auxiliary switch
off with ZCS, and boost diode D is turned off with a controlled
rate. As a result, the turn-on switching loss of
turn-off
the boost switch, the turn-off switching loss of the auxiliary
switch, and reverse-recovery-related losses of the boost rectifier are greatly reduced, which minimizes the overall switching
losses and, therefore, maximizes the conversion efficiency. In
addition, soft-switching has a beneficial effect on EMI that may
result in a smaller volume input filter.
Due to ZVS of the boost switch, the most suitable implementation of the circuit in Fig. 2 is with the boost switch consisting of a metal oxide semiconductor field effect transistor
(MOSFET) device or a parallel combination of MOSFETs. Similarly, due to the zero-current turn off of the auxiliary switch,
the circuit in Fig. 2 is suitable for an insulated gate bipolar transistor (IGBT) auxiliary switch. Auxiliary switch is turned on
while voltage across it is equal to output voltage V . Despite
this hard turn on of auxiliary switch , there is no significant
performance penalty, since the output capacitance of IGBTs is
much smaller than that of MOSFETs. In fact, since the overall
switching loss of IGBTs is dominated by its turn-off loss due
to the current tailing effect, the optimum switching strategy of
IGBT is soft turn off, rather than soft turn on. Moreover, even
an implementation with an IGBT boost switch is possible provided that a turn-off snubber capacitor is connected across the
IGBT boost switch to reduce the turn-off loss due to the IGBTs
current-tail effect. In this case, an IGBT with a co-packaged antiparallel diode or an external diode must be used.
In the proposed circuit, the voltage and current stress on boost
switch and boost rectifier are identical to the corresponding
(15)
while the current stress, neglecting residual reverse-recovery

and magnetizing current , is
current
nV
(16)
(17)
where
is the duty cycle of auxiliary switch ,
is the
1
is the switching frequency.
switching period, and
Since, from (17)
V
(18)
the best way to minimize V is to maximize magnetizing inso that the power loss of the clamp circuit, i.e.,
ductance
, is also minimized. Typically, for
the power dissipation of
a properly designed transformer TR, the clamp-circuit loss is
negligible compared to the output power so it virtually does not
affect the conversion efficiency.
is determined from the desired
The snubber inductor
turn-off rate of the boost rectifier current defined in (6), i.e.,
nV
(19)
As can be seen from (19), to minimize the value of snubber

inductor , it is desirable to maximize turns ratio n of the transformer. Since
0.5, the turns ratio of the transformer
should not be much less than 0.5. Typically, the values of n that
400 V,
are in the 0.30.5 range are optimal. Assuming that V
0.5, and
100 A S, the inductance value of
snubber inductor
is 2 H. It should be noted that the peak
is reduced by the selection
current stress of auxiliary switch
of the maximum turns ratio of the transformer, as seen in (16).
III. EXPERIMENTAL RESULTS
The performance of the proposed boost converter with active
snubber was evaluated on a 1.5 kW (375 V/3.95 A), 80 kHz,
PFC circuit operating at universal-line range (85264 V ).
Since the drain voltage of boost switch is clamped to bulk
, the peak voltage stress on boost switch is apcapacitor
proximately 380 V. The peak current stress on switch , which
occurs at full load and low line, is approximately 27.7 A. There500 V, 25

fore, three IRFP460LC MOSFETs (V
20 A, R
0.27 ) from IRF were used for boost switch . A
high speed HGTG12N60A4 IGBT (V
600 V,
23 A)
since its maxfrom Fairchild was used as auxiliary switch
380 60
imum drain voltage is
440 V, as described in (15). To clamp the voltage across switch
, clamp diode dc (BYM26C), clamp capacitor
(0.1 F,
(5.1 k , 2 W) were used as
100 V), and clamp resistor
shown in Fig. 2. The calculated maximum power dissipation of
is approximately 0.7 W.
clamp resistor
Since boost diode D should block the bulk voltage and
conduct the peak input current, an RHRP3060 diode (
600 V,
30 A) from Fairchild was used. Two
600 V,
15 A) were
RHRP1560 diodes (
and diode
.
used as diode
, the
To obtain the desired inductance of boost inductor
boost inductor was built using two glued toroidal powder cores
60) from Magnetics and 72 turns of magnet wire
(77071,
(AWG #18).
An external snubber inductor was connected in series with
of transformer TR, as shown in Fig. 2. To obtain
winding
required snubber inductance that is approximately 1.7 H at full
load, the external snubber inductor was built using a toroidal
60) from Arnold and six turns of
powder core (MS90060,
magnet wire (AWG #16).
Transformer TR was built using a toroidal ferrite core (A07
25 15 13 ), ten turns of magnet wire (AWG# 18) for
, and 40 turns of magnet wire (AWG# 21) for
winding
. Magnetizing inductance
measured across
winding
of transformer TR is approximately 12 mH. The
winding
leakage inductance measured across winding
of transformer
TR is approximately 0.3 H.
Two high voltage aluminum capacitors (470 F, 450 V )
to meet the hold-up time
were used for bulk capacitor
requirement.
Fig. 6 shows the oscillograms of key waveforms of the experimental converter when it delivers full power from the low line.
As can be seen from the corresponding waveforms in Fig. 5,
there is good agreement between the experimental and theoretical waveforms.
Fig. 7 shows the measured efficiencies of the experimental
converter with and without the active snubber at the minimum
and the maximum line voltages as functions of the output power.
The active snubber improves the conversion efficiency for both
line voltages. Nevertheless, the efficiency improvement is more
pronounced at the minimum line and higher power levels where
the reverse-recovery losses are greater. Specifically, at the maximum line (265 V ), the efficiency improvement at 1.5 kW
1.5 kW, the
is 0.5%. However, at the minimum line and
active snubber improves the efficiency by approximately 2%,
which translates into approximately 20% reduction of all losses.
Furthermore, at the same power levels, the temperatures of the
semiconductor components in the implementation with the active snubber are significantly lower than those in the implementation without the snubber.
Finally, since the boost switch and auxiliary switch operate
with soft switching, the rectifier reduces switching losses and
103
Fig. 6. Measured key waveforms of experimental converter at P

85 V . Time base: 2 s/div.
and V
= 1500 W
Fig. 7. Measured efficiencies of the 80-kHz, 1.5-kW experimental converter

with (dashed lines) hard switching and (solid lines) soft switching at V
85 V
and 265 V
as functions of the output power.
thereby improves the spectral performance of the rectifier for

less EMI.
104
IV. CONCLUSION
A novel implementation of the PFC boost converter with an
active snubber that can achieve soft-switching of all semiconductor devices in the power stage has been introduced. By using
an active snubber that consists of an auxiliary switch, a snubber
inductor, and a reset circuit, boost switch is turned on with
is turned off with ZCS, and boost
ZVS, auxiliary switch
diode is turned off softly using a controlled
rate. As
a result, the turn-on switching losses in the boost switch, the
turn-off switching loss in the auxiliary switch, and reverse-recovery-related losses in the boost diode are greatly reduced,
which maximizes the conversion efficiency. The performance
of the proposed converter was verified on an 80-kHz, 1.5-kW
prototype circuit that was designed to operate from a universal
ac-line input. The proposed technique improves the efficiency
by approximately 2% at full load and low line.
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Yungtaek Jang (S92M95SM01) was born in

Seoul, Korea. He received the B.S. degree from
Yonsei University, Seoul, Korea, in 1982, and the
M.S. and Ph.D. degrees from the University of
Colorado, Boulder, in 1991 and 1995, respectively,
all in electrical engineering.
From 1982 to 1988, he was a Design Engineer at
Hyundai Engineering Co., Korea. Since 1996, he has
been a Senior Member of R&D Staff at the Power
Electronics Laboratory, Delta Products Corporation,
Research Triangle Park, NC (the U.S. subsidiary of
Delta Electronics, Inc., Taiwan, R.O.C.). He holds 14 U.S. patents. His research
interests include resonant power conversion, converter modeling, control techniques, and low harmonic rectification.
Dr. Jang received the IEEE TRANSACTIONS ON POWER ELECTRONICS Prize
Paper Award for best paper published in 1996
Milan M. Jovanovic (F01) was born in Belgrade,

Serbia. He received the Dipl.Ing. degree in electrical
engineering from the University of Belgrade.
Presently, he is the Chief Technology Officer of the
Power Systems Business Group of Delta Electronics,
Inc., Taipei, Taiwan, R.O.C.
Kung-Hui Fang was born in Taiwan, R.O.C., on

Feb. 15, 1969. He received the M.A. degree from
National Cheng Kung University, Tainan, Taiwan, in
1994.
Since 1994, he has been a Power Supply Design Engineer at Delta Electronics Inc., Taoyuan,
Taiwan. His interests include power electronic circuit
topology and control theory.
Yu-Ming Chang was born in Taiwan, R.O.C., on

Dec. 15, 1964. He received the M.A. and Ph.D.
degrees from National Cheng Kung University,
Tainan, Taiwan, in 1991 and 1998, respectively.
He is a Business Director of the Telecom Power
Business Unit, Delta Electronics Inc., Taoyuan,
Taiwan. His interests include circuit topology innovation of power converters, control methodology,
and packaging technologies.

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IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 21, NO. 1, JANUARY 2006