2015 SEMI MEMS Forum-07-CMOS-MEMS Technology for Signal Processing, Sensing, And Actuation-清大-20150902

CMOS-MEMS Technology for Signal
Processing, Sensing, and Actuation

Sheng-Shian Li
Professor, NEMS & PME, National Tsing Hua University, Taiwan
Outline
NATIONAL TSING HUA UNIVERSITY
Enabling Technology: CMOS-MEMS

CMOS-MEMS Resonators and Fabrication
Resonator Performance Enhancement
Implementations
Resonant/Acoustic Hub
Motion Hub
Environment Hub
Bio Hub
CMOS-MEMS Extension and Future Directions

Conclusions
2
CMOS Fabrication Platforms

Available CMOS foundries: TSMC, UMC, etc
Mature CMOS processes: 2P4M, 1P6M, etc

0.35m 2P4M CMOS process
0.18m 1P6M CMOS process
Si substrate
Si substrate
Ex: 0.35m CMOS-MEMS Platform

Via-supported Free-Free beam
Pure Al Free-Free beam

B
B
B
Electrode
Electrode
Electrode
Passivation
Etching with
buffer HF
silicon substrate
BB Cross Section View
Fabrication Results
Via-Supported
Free-Free Beam
Free-Free Beam
Pure-Al
Free-Free Beam
Via-Supported
Free-Free Beam
I/O Electrode
Clamped-Clamped
Beam
Nodal
Support
Simply-Supported
Beam
Via-Support
Circuits
Stacked
Comb Drive
Pinned-Pinned
Beam
CMOS-MEMS Advantage
Comparison among air and vacuum, direct

measurement and circuit assistance.
0
-10
Transmission [dB]
-20
Performance
Performance
Vacuum
Air
fo = 1.171MHz
VP = 70V
Q = 2470
fo = 1.174MHz
VP = 60V
Q = 141
Double-Ended Tuning
Fork (DETF) Resonator
-30
-40
-50
-60
-70
MEMS + Amplifier
Stand-alone MEMS
Performance
fo = 1.166MHz
VP = 75V
Q = 2726
Rm = 375k
-80
-90
-100
-110
1.14
1.15
1.16
1.17
1.18
1.19
1.2
1.21
Frequency [MHz]
Integration Scheme for Smart IoX

+ CMOS-MEMS enables Wearable and IoT MEMS components for IoX

MEMS Sensor-SoC (S-SOC)
Signal Processing /
Communication
Multi-Sensors
toward System on Chip
Power
TX/RX
MCU
+
Interface
Circuit
CMOS
G
N
S
CMOS-MEMS
More-Moore & More-than-Moore

Small, Integration, and Smart

Add value to the existing CMOS technology
Passive
Sensor/Actuator
Diversification
Compact
Form Factor
More Moore
90
nm
0.13
m
0.18
m
0.35
m
Analog / RF
Biochip
More than Moore
Interacting with people and environment
Information
Processing
Digital content
System-on-chip
(SoC)
Non-digital content
System-in-package (SiP)
CMOS-MEMS:
Combining the SiP, SoC
High value system
8
Modified from ITRS Roadmap 2005, www.itrs.net
NTHU Focus: CMOS-MEMS Tech

CMOS-MEMS as Building Blocks

Motion Hub
Motion Hub
Resonant / Acoustic Hub

N
S
Environment Hub
Environment Hub
Bio Hub
Bio Hub
CMOS-MEMS
10
LNA
BPF
A/D
Sensor - 2
LNA
BPF
A/D
LNA
BPF
A/D
RX
MCU
Sensor - 1
Sensor - N
Global Timing Module

(Sens. / ADC / MCU / RF PLL)
Resonant Sensor
MEMS
Resonator
Bandpass Filter
Pull-in Frame
Coupler
TX
RTC
CMOS-MEMS
Wireless
Sensor SoC
Ref. Oscillator
Meander Spring
Interface
MEMS
CMOS Amplifier
Driving
Electrode
Beam-Array
Resonator
Sensing
Electrode
Single Chip
To RF switch & Antenna
Resonator Enhancement
Power
Handling
Po
Quality
Thermal
Factor
Stability
Q
TCf
CMOS-MEMS Resonators
Motional
Frequency
Impedance
Tuning
Rm
f/fo
Parasitic
Feedthrough
Cparasitic
12
Power
Handling
Po
Quality
Factor
Q
Thermal
Stability
TCf
Motional
Impedance
Rm
Frequency
Tuning
f/fo
Parasitic
Feedthrough
Cparasitic
13
Scaling with Advanced IC Tech.

TSMC 0.35 m Process
Motional Impedance:
do=0.5m
mk d o4
Rm =
Q o2VP2 A2
Rm=6.38 M
TSMC 0.18 m Process

do=0.28m
do
Rm=627 k
TSMC 0.13 m Process

do=0.21m
Rm=199 k
TSMC 90 nm Process
do= 0.14m
Rm=39k
14
Comparison of Various Platforms

0.18m platform
0.18m platform
Pinned-Pinned Beam
Tuning Fork
Free-Free Beam
Performance
Performance
Performance
fo=1.45MHz
VP=25V
Q=179
Rm=7.16M
fo=4.91MHz
VP=20V
Q=100
Rm=1.17M
fo=15MHz
VP=24V
Q=857
Rm=4.88M
Transmission [dB]
0.35m platform
1.40
1.45
1.50
4.70
4.90
5.10
Frequency [MHz]
Li & Li, EDL 2012.
14.90
15.10
15
Mechanically-Coupled Arraying
imN
Motional
Impedance
io
vo
Rm
Lm Cm
Rm
Lm Cm im1
Rm, resonator
vi
vi
= =
=
io N i m
N
im2
vi
RL
Output
Current
Rm, array
Lm Cm imN
im2
im1
vi
Rm
io
RL
Freq.
16
CMOS-MEMS Resonator Arrays

5-Resonator Array
Single Resonator
9-Resonator Array
Li & Li, T-UFFC 2012.
17
Multi-Beam Array Test

Transmission [dB]
VP=30V, measured @ 100Torr

9-Res. Array
fo=10.50MHz
-65 Q=1,377
Rm=220k
5-Res. Array
fo=10.62MHz
Q=1,220
Rm=600k
Single Res.
fo=10.86MHz
Q=1,919
Rm=2.23M
-78
-91
-104
-117
10.35
10.5
10.65
10.8
Frequency [MHz]
10.95
11.1
Li & Li, T-UFFC 2012. 18
Power
Handling
Po
Quality
Factor
Q
Thermal
Stability
TCf
Rm
+ Advanced
CMOS
+ Array
Frequency
Tuning
f/fo
Parasitic
Feedthrough
Cparasitic
19
High-Q Nodal Supports

Clamped-Clamped Beam
Free-Free Beam
Q~50
Q~1500
Performance
do=58nm
fo=4.37MHz
Q=39
RX=87k
Transmission [dB]
-65
Measurement
P=-15dBm
VP=110V
-65
-75
-85
Performance
do=275nm
fo=4.46MHz
Q=59
RX=524k
Performance
do=217nm
fo=4.08MHz
Q=36
RX=262k
-95
-105
3.5
4.0
4.5
Frequency [MHz]
Transmission [dB]
-55
9-Res. Array
fo=10.50MHz
Q=1,377
VP=30V
Rm=220k
5-Res. Array
fo=10.62MHz
Q=1,220
VP=30V
Rm=600k
Single Res.
fo=10.86MHz
Q=1,919
VP=30V
Rm=2.23M
-78
-91
-104
-117
10.35
10.5
10.65
10.8
Frequency [MHz]
10.95
11.1
20
High-Q Material and Bulk Mode

Lam Bulk Mode
Q>4,800
Q>10,000
0
45
90
135
180
10.32
10.37 10.42 10.47

Frequency [MHz]
Chen & Li, EDL 2012.
225
10.52
Performance
dair=380nm
VP1=70V
VP2=70V
P=-5dBm
fo=47.9MHz
Q=10,696
Rm=250k
Transmission [dB]
Transmission [dB]
dair=530nm
Co=10.6fF
VP, M6=120V
VP, Poly=-90V
P=3dBm
fo=10.42MHz
Q=4,805
45
Phase [Degree]
Performance
90
45
0
45
90
47.92
47.94
47.96
47.98
Frequency [MHz]
Chen & Li, IFCS12.
Phase [degree]
DETF Flexural Mode
135
48.00
21
Progress on Quality Factor

16,000
14,000
Oxide-Rich
12,000
Oxide
Composite
10,000
Oxide
8,000
6,000
Composite
4,000
Oxide
2,000
0
2010
2011
2012
Year
2013
22
Power
Handling
Po
+ Nodal
Support
+ Oxide Rich
+ Bulk Mode
Rm
+ Advanced
CMOS
+ Pull-in
+ Array
Thermal
Stability
TCf
Frequency
Tuning
f/fo
Parasitic
Feedthrough
Cparasitic
23
Array Power Handling Enhance

Fe
im1
io
vi
RL
Fe /N
Freq.
Power
Handling
im2
im1
io
vo
RL
Output
Current
Fe /N
Fe
imN
Fe /N
vi
vo
Output
Current
Fe
Freq.
Po, array = vi io = vi ( N im ) = N Po, resonator

24
Enhancement of Power Handling

-65
Transmission [dB]
-70
Conditions
Rm=200k
PNA=+5 dBm
Single-Res.
-75
9-Res. Array
-80
-85
-90
-95
-100
-105
0.99
0.995
1.005
1.01
Normalized Frequency [MHz/MHz]

Li & Li, T-UFFC 2012.
25
Po
+ Array
+ Bulk Mode
+ Nodal
Support
+ Oxide Rich
+ Bulk Mode
Rm
+ Advanced
CMOS
+ Pull-in
+ Array
Thermal
Stability
TCf
Frequency
Tuning
f/fo
Parasitic
Feedthrough
Cparasitic
26
Passive Temperature Compensation

TCE of metal is negative, TCE,Al ~-716 ppm/ (Meas.)

TCE of oxide is positive, TCE ~ +185 ppm/ (Ref.)
SiO2 1st-order temperature compensation!

Mere-Metal Resonator
Beam
Metal-Rich Resonator
VIA2
M3
Oxide: 0%
M4
M2
M4
Support
Oxide-Rich Resonator
VIA1
Oxide~39.6%
M2
M1
Oxide> 76%
27
Passive Temp. Compensation

Adjustment by SiO2 Ratio
Oxide-Rich
LAME
81 ppm/K
5000
Oxide-Rich
DETF
63 ppm/K
f/fo [ppm]
Oxide: 97%
-5000
Oxide: 78.3%
Metal-Rich
FF beam
-10000
-59.7 ppm/K
-15000
Metal-Rich
FF beam
-20000
-97.8 ppm/K
-25000
290 300 310 320 330 340 350
Temperature [K]
Oxide: 38%
Oxide: 48%
Mere metal
FF beam
-358 ppm/K
Oxide: 0%
28
Po
+ Array
+ Bulk Mode
+ Nodal
Support
+ Oxide Rich
+ Bulk Mode
TCf
+ Passive
Oxide/Metal
f/fo
Rm
+ Advanced
CMOS
+ Pull-in
+ Array
+ ke
+ Thermal
Cparasitic
+ Mech. Diff.
+ Elec. Diff.
29
Oscillator Implementation
Oscillation Conditions
Loop Gain > 1
Loop Phase = 0
Sustaining Amplifier
RF
Rin
Rout
-A1
Rm
Cin
-A2
+1
Lm Cm
Cout
CMOS-MEMS Resonator
30
Fabrication Results (1/2)

IEDM 2013, Washington DC, USA
31
Fabrication Results (2/2)

Thermal-Isolation
Trench
M4-Bridge
M3
VIA
M2
600nm
DETF
Resonator
PolySi-1
M1
PolySi-2
32
Resonator Characterization
10
Transmission [dB]
0
-10
+0.5 dB
Resonator + TIA
-20
+72 dB
-30
fo = 1.168 MHz
VP = 75 V
VC = 1.3V
Q = 2405
Pdrive = -45dBm
-40
-50
-60
-70
Stand-alone
resonator
-71.5 dB
-80
fo = 1.166 MHz
VP = 75 V
Q = 1985
Pdrive = -14dBm
-90
-100
-110
-120
1.12
1.14
1.16
1.18
1.2
1.22
Frequency [MHz]
33
Oscillator Measurement
-30
Amplitude [V]
Output Power [dBm]
-10
VP = 45V
-50
-70
960 mV
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
0
Time [S]
-90
-110
-130
-150
1.1805
1.181
1.1815
1.182
1.1825
1.183
Frequency [MHz]
34
Phase Noise (f o = 1.18 MHz)
Measured by Agilent E4440a

Phase Noise [dBc/Hz]
-50
Measurement (VP=45V)
Model Fitting Curve
-60
-70
-80
1/f3
-112 dBc/Hz @1-kHz
-90
-120 dBc/Hz @ 1-MHz
-100
-110
-120
-130
0.01
0.1
10
100
1000
Offset Frequency [kHz]

Li & Li, IEDM13.
35
Phase Noise Improvement

Nonlinear manipulation and feedback phase control
Phase Noise [dBc/Hz]
-30
VP = 71V
-40
VP = 70.6V
-50
-60
366k
-70
-80
52.81H
12fF
-90
0.379fF
12fF
-100
-110
-120
Simulation
(Cadence Spectre)
-130
0.01
0.1
10
100
1000
Offset Frequency, fm [kHz]

Li & Li, IEDM14.
36
Oscillator Roadmap
0.35m CMOS-MEMS
TCF Magnitude [ppm /C]
1000
0.18m CMOS-MEMS
Uncompensated
Silicon Resonators
100
10
This work
This work
(Ovenized)
0.1
100
1000
10000
100000
Quality Factor
37
Filter Implementation
+ Rm Improvement
Coupler
Pull-in Frame
1. Gap Reduction
2. Arraying Design
RQ
vo
RQ
vi
Optional
Tuning
Electrode
1st Mode
Resonator 1
Coupler
2nd Mode
Vpull-in
Transmission
5-Array Filter
io
Terminated
Unterminated
Resonator 2
f
38
Fabrication Results
+ Array Filter with Oxide Etching

Pull-in Frame
Driving
Electrode
Coupler
Beam-Array
Resonator
Meander Spring
Sensing
Electrode
Chen & Li, S&A:A 2014.
39
Filter Termination
0
Terminated
Transmission
[dB]
-20
Performance
f0 = 8.69 MHz
BW = 37.8 kHz
%BW = 0.43%
RQ = 33 k
I.L. = 12.75 dB
-40
-60
Performance
-80
f0 = 8.69 MHz
BW = 36.7 kHz
%BW = 0.42%
RQ = 50
I.L. = 60.6 dB
-100
Extracted
-120
8.6
8.65
8.7
8.75
Frequency [MHz]
8.8
40
Resonant Sensor Implementation

ID
Bias-Tee
Port-1
Vs
IS
Bias-Tee
VD
VD = 0.5V
VS = 1.0V
Po = -15dBm
Port-3
im1
id
im2
ID
Bias-Tee
id
Bias-Tee
Port-2
Port-4
IS
: =
41
Fabrication Results
100 m
A
A
L=60 m
50 m
Poly2
Poly1
Oxide
42
Potential Mass/Aerosol Sensors

100 m
A
A
L=60 m
50 m
Power
Frequency
43
CMOS-MEMS Motion Hub
44
CMOS-MEMS Motion Hub

Si
Poly-Si
W-via
Metal
Polymer
SiO2
Standard TSMC CMOS process

Developed by Prof. Fangs group
45
Integration: G/M/P Sensors

3-axis M sensor
3-axis G sensor
P sensor
Monolithic sensors integration
Sensor
3-axis
G-sensor
3-axis
M-sensor
P-sensor
T-sensor
H-sensor
Sensitivity
4.94 / 5.39 /2.96

X/Y/Z (mV/G)
0.21 / 0.20 /0.90

X/Y/Z (V/T)
19.6V/KPa
0.72*10-3/C
0.037%/%RH
Sensing range
0.01~5G
50~1200T
30~200KPa
30~120C
30~90%RH
Non-linearity
< 6.5%
< 3.27%
9.5%
46
CMOS-MEMS Environment Hub
47
CMOS-MEMS Environment Hub

Si
Poly-Si
W-via
Metal
SiO2
Parylene
RF-aerogel
np-AAO
Standard TSMC CMOS process

Developed by Prof. Fangs group
48
Integration: H/P/T Sensors

H sensor
P sensor
T sensor
Monolithic sensors integration

Sensor
3-axis
G-sensor
3-axis
M-sensor
P-sensor
T-sensor
H-sensor
Sensitivity
4.94 / 5.39 /2.96

X/Y/Z (mV/G)
0.21 / 0.20 /0.90

X/Y/Z (V/T)
19.6V/KPa
0.72*10-3/C
0.037%/%RH
Sensing range
0.01~5G
50~1200T
30~200KPa
30~120C
30~90%RH
Non-linearity
< 6.5%
< 3.27%
9.5%
49
CMOS-MEMS Bio Hub
50
CMOS ISFET for Dopamine Detection

H2SO4/H2O2 etch
Michael S.-C. Lu, NTHU
51
fM-Level Dopamine Detection

-4
Current (A)
x 10
Simulation
MES buffer
1 fM
100 fM
10 pM
3
2
W/L = 3
0.5
1.5
2
Vsg (V)
2.5
-3
Current (A)
4
3
2
x 10
Simulation
MES buffer
1 fM
100 fM
10 pM
W/L = 30
0
0.5
1.5
2
Vsg (V)
2.5
52
fM-Level Cap. Dopamine Sensors

Produced negative
charges reduce the
sense capacitance
dopamine
53
Dopamine Sensors by CMOS-MEMS

microelectrodes
SiO2
54
CMOS Magnetic-bead Biosensor Array

55
Detection of a Single Microbead

microbead with functionalized

anti-streptavidin antibody
Output frequency (MHz)
5
4
3
Due to C change (5.3 fF

In average)
2
1
0
before manipulation
with bead after manipulation
1000
2000
3000
4000
Time (sec)
anti-streptavidin antibody
on sensor surface
Output frequency (MHz)
5
4
No C change
3
2
1
0
0
before manipulation
w/o bead after manipulation
1000
2000
Time (sec)
3000
4000
56
Sensor/Actuator System Extension

Circuit IPs provide by CIC or Third Party
Motion Hub
Environment Hub
Bio Hub
57
MEMS Industry Supports

Micro Sensors and Actuators

Technologies Consortium (SAT)
58
SAT Members
System
Fabless/
Fab-light
Material
Equipment
Fab
Packaging/
Testing
59
SAT Professors
60
Acknowledgments
Funding Supports MOST, NTHU, TSMC, ITE, TXC

Chip Manufacturing CIC, TSMC, UMC, NDL
Prof. Weileun Fang, Prof. Michael S.-C. Lu, and all my
graduate students
Thanks for your attention!!

2015 SEMI MEMS Forum-07-CMOS-MEMS Technology for Signal Processing, Sensing, And Actuation-清大-20150902

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2015 SEMI MEMS Forum-07-CMOS-MEMS Technology for Signal Processing, Sensing, And Actuation-清大-20150902

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CMOS-MEMS Technology for Signal

Processing, Sensing, and Actuation

Enabling Technology: CMOS-MEMS

CMOS-MEMS Extension and Future Directions

CMOS Fabrication Platforms

Available CMOS foundries: TSMC, UMC, etc

Mature CMOS processes: 2P4M, 1P6M, etc

0.18m 1P6M CMOS process

Ex: 0.35m CMOS-MEMS Platform

Via-supported Free-Free beam

Pure Al Free-Free beam

BB Cross Section View

Comparison among air and vacuum, direct

Integration Scheme for Smart IoX

+ CMOS-MEMS enables Wearable and IoT MEMS components for IoX

More-Moore & More-than-Moore

Small, Integration, and Smart

More than Moore

Interacting with people and environment

NTHU Focus: CMOS-MEMS Tech

CMOS-MEMS as Building Blocks

Resonant / Acoustic Hub

NATIONAL TSING HUA UNIVERSITY

Global Timing Module

To RF switch & Antenna

NATIONAL TSING HUA UNIVERSITY

Scaling with Advanced IC Tech.

TSMC 0.35 m Process

TSMC 0.18 m Process

TSMC 0.13 m Process

Comparison of Various Platforms

CMOS-MEMS Resonator Arrays

Li & Li, T-UFFC 2012.

Multi-Beam Array Test

VP=30V, measured @ 100Torr

Li & Li, T-UFFC 2012. 18

High-Q Nodal Supports

High-Q Material and Bulk Mode

Lam Bulk Mode

10.37 10.42 10.47

Chen & Li, EDL 2012.

Chen & Li, IFCS12.

DETF Flexural Mode

Progress on Quality Factor

Array Power Handling Enhance

NATIONAL TSING HUA UNIVERSITY

Po, array = vi io = vi ( N im ) = N Po, resonator

Enhancement of Power Handling

Normalized Frequency [MHz/MHz]

Passive Temperature Compensation

TCE of metal is negative, TCE,Al ~-716 ppm/ (Meas.)

SiO2 1st-order temperature compensation!

Passive Temp. Compensation

Adjustment by SiO2 Ratio

Fabrication Results (1/2)

IEDM 2013, Washington DC, USA

Fabrication Results (2/2)

IEDM 2013, Washington DC, USA

Output Power [dBm]

IEDM 2013, Washington DC, USA

Phase Noise (f o = 1.18 MHz)

NATIONAL TSING HUA UNIVERSITY

Measured by Agilent E4440a

-112 dBc/Hz @1-kHz