Infineon-AN2010 09 Automotive IGBT Modules Explanations-An-V1.0-En

Aut o moti ve I GB T M odule
Applic atio n N ote

Explanation of Technical Information
AN 201 0 -0 9
Revison 1.0
Elect ric D rive T rain
Edition Revison 1.0

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2010 Infineon Technologies AG
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Automotive IGBT Module

Document Change History

Date
12-08-2010
Version
1.0
Changed By
T. Reiter
Change Description
Initial Version
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Application Note
AN2010-09, 2010

Table of Contents
Page
Abstract .......................................................................................................................................... 5
2
2.1
2.2
Introduction ................................................................................................................................... 5
Status of datasheets ....................................................................................................................... 5
Type Designations .......................................................................................................................... 6
3
3.1
3.2
3.3
3.4
3.5
3.6
3.6.1
3.6.2
3.7
3.7.1
3.7.2
3.7.3
3.8
3.9
3.10
3.11
Datasheet parameters IGBT ......................................................................................................... 7

Collector-emitter voltage VCES ......................................................................................................... 7
Total power dissipation Ptot ............................................................................................................. 7
Collector current IC .......................................................................................................................... 7
Repetitive peak collector current ICRM ............................................................................................. 8
Reverse bias safe operating area RBSOA ..................................................................................... 8
Typical output and transfer characteristics ..................................................................................... 9
IGBT device structure and difference in output characteristic of power MOSFETs and IGBTs. .... 9
Transfer and output characteristics (IGBT datasheet) ..................................................................10
Parasitic capacitances ..................................................................................................................12
Measurement circuits ....................................................................................................................13
Gate charge Qg and gate current .................................................................................................14
Parasitic turn-on ............................................................................................................................15
Switching times .............................................................................................................................16
Short circuit ...................................................................................................................................18
Leakage currents ICES and IGES ......................................................................................................19
Thermal characteristics .................................................................................................................19
4
4.1
4.2
4.3
4.4
Datasheet parameters Diode......................................................................................................21

Forward current IF and forward characteristic ...............................................................................21
Repetetive peak forward current IFRM ............................................................................................21
Reverse recovery ..........................................................................................................................21
Thermal characteristics .................................................................................................................23
5
5.1
5.2
Datasheet parameters NTC-thermistor .....................................................................................24

NTC resistance..............................................................................................................................24
B-values ........................................................................................................................................24
6
6.1
6.2
6.3
6.4
6.5
Datasheet parameters Module ...................................................................................................25

Insulation voltage VISOL .................................................................................................................25
Stray inductance LS .......................................................................................................................25
Module resistance RCC+EE ............................................................................................................26
Cooling circuit ................................................................................................................................27
Mounting torque M ........................................................................................................................28
References ...................................................................................................................................28
Application Note
AN2010-09, 2010

Abstract
Abstract
Note:
The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
This Application Note is intended to provide an explanation of the parameters and diagrams given in the
datasheet of automotive IGBT modules. With the Application Note the designer of power electronic
components requiring an IGBT module is able to use the datasheet in the right way and will be provided with
background information.
Introduction
Each parameter mentioned in the datasheet gives values which characterizes the module as detailed as
possible.
With this information the designer should be able on the one hand side to compare devices from different
competitors with each other, on the other hand side the information should be sufficient to figure out where
the limits of the device are.
This document helps to understand the datasheet parameter and characteristics much better. It explains the
interaction between the parameters and the influence of the conditions like temperature. Datasheet values
that refer to dynamical characterization tests, e.g., switching losses, are related to a specific test setup with
defined stray inductance, gate resistance, etc. .Therefore, these values can deviate from a final user
application.
The attached diagrams, tables and explanations are referring to the datasheet of FS800R07A2E3 (rev.1.4
from 2009-04-20) as example. The shown values and characteristics are not feasible to use for design-in
activities. For the latest version of datasheets please refer to our webpage (www.infineon.com/hybrid).
2.1
Status of datasheets
Depending on the status of the product development, the relating technical information contains:
Target data
Preliminary data
Final data
Target data describes the design goal of the future product.

Preliminary data is based on components produced from series tools. The manufacturing is close to
production, but partly in laboratory. Mechanical, thermal and electrical data can change slightly during the
further development process. Reliability and lifetime partly, not finally approved for IGBT module.
Final data is based on final components. Manufacturing is done under series conditions considering
productive tooling for mass production. Mechanical, thermal and electrical data are fixed. Reliability and
lifetime is approved and released.
Application Note
AN2010-09, 2010

Introduction
2.2
Type Designations
FS800R07A2E3
Chip Type
Module Type
Blocking Voltage
Conducting Type
Current Rating
Module Topology
Module Topology
Designation
Description
FS
SixPACK / B6-bridge
FF
Halfbridge (two IGBTs and freewheeling diodes)
FZ
Single switch with IGBT and freewheeling diode
F4
H-Bridge
FD/DF
Chopper or buck or boost-converter modules
Current Rating
Designation
Description
800
Implemented collector current [A]
Conducting Type
Designation
Description
Reverse conducting
Bidirectional blocking switch
Blocking Voltage
Designation
Description
07
Collector-emitter breakdown voltage in 100V. Value is rounded. Please refer

to breakdown voltage in datasheet for real value.
Module Type
Designation
Description
Ax
A: Automotive qualified package

x=1: HybridPACK1
x=2: HybridPACK2
Wx
W: Easy package
x=1 EASY 1B
x=2 EASY 2B
Note: A as last character of the designation indicates an EASY Automotive power
module
Chip Type
Designation
Description
EX
Trench IGBT, fast switching and low Vce,sat

x=1..n Internal reference Number
Application Note
AN2010-09, 2010

Datasheet parameters IGBT
3.1
Collector-emitter voltage VCES
The permissible peak collector emitter voltage is specified at a junction temperature of 25C (see Figure 1).
This value decreases for lower temperatures with a factor of approximately:
.
Figure 1 Collector-emitter voltage of the IGBT (datasheet)
3.2
Total power dissipation Ptot
This parameter describes the maximum feasible power dissipation over:
the cooling fluid temperature (Figure 2), in case of power modules with a PinFin structure (RthJF).
the module case temperature, in case of power modules with a flat base plate or without baseplate
(RthJC).
Therefore, the total power dissipation can be calculated in general with:

(1)
The considered HybridPACK2 is a power module with a PinFin structure. The power dissipation is related
to T of junction and cooling fluid as well as thermal resistance between junction and cooling fluid (eq. (2)).
Up to a cooling fluid temperature of 25C, the power dissipation is specified at its maximum value (eq. (3)).
With increasing cooling fluid temperature the power dissipation is decreasing.
(2)
(3)
Figure 2 Maximum ratings for Ptot (datasheet)

The feasible power dissipation of the diode chips can be calculated, respectively. However, thermal
resistance of junction to cooling fluid of the diode has to be used for eq. (2), eq.
(3).
Please take note that the case temperature is higher than 25C, if the fluid temperatue has a temperature of
25C. Therefore, the current rating of a power module with PinFin structure seems to be lower in comparison
to a module with a flat base plate. But since thermal resistance of case to heatsink is taken into account, the
advantage of a PinFin structure becomes obvious. In chapter 3.11 you can find more detailed information
about the thermal characteristic of a power module.
3.3
Collector current IC
Based on total power dissipation the maximum permissible collector current rating of a module can be
calculated with eq. (4). Thus, in order to give a current rating of a module, the corresponding junction and
cooling fluid temperature has to be specified, as shown for example in Figure 3. Please note that current
ratings without defined temperature conditions have no technical meaning at all.
Application Note
AN2010-09, 2010

(4)
Since IC is not known in eq. (4), VCE sat @ IC is also not known, but can be found within few iterations [5]. The
ratings of continous DC-collector current are calculated with maximum values for VCE sat to ensure the
specified current rating, taken into account component tolerances.
Figure 3 DC-collector current (datasheet)
3.4
Repetitive peak collector current ICRM
The nominal current rating can be exceeded in an application for a short time. This is defined as repetitive
peak collector current in the datasheet (see Figure 4) for the specified pulse duration. In theory, this value
can be derived from the feasible power dissipation and the thermal impedance Zth, if the duration of the
overcurrent condition is defined. However, this theoretical value is not taken into account any limitations of
bond wires, bus-bars, power connectors, etc. Therefore, the datasheet value is quite low compared to a
theoretical calculated value, but it specifies a safe operation considering all practical limitations of the power
module.
Figure 4 Repetitive peak collector current (datasheet)
3.5
Reverse bias safe operating area RBSOA
The reverse bias safe operating area describes safe operating conditions at turn-off for the IGBT of the
power module. The chip can be driven within its specified blocking voltage up to twice its nominal current
rating, since the maximal junction temperature defined for switching operation is not exceeded. The safe
operating area of the power module is limited due to stray inductances. With increasing switching currents,
the allowed collector-emitter voltage is decreased. Furthermore, this degradation strongly depends on
system related parameters, like stray inductance of the DC-Link capacitor and the current commutation slope
during the switing transitions. The DC-Link capacitor is assumed to be ideal for this operating area. The
current commutation slope is defined via a specified gate resistance and gate driving voltage, as noted within
the testparametes in the diagram of Figure 5.
Application Note
AN2010-09, 2010

Figure 5 Reverse bias safe operating area (datasheet)
3.6
Typical output and transfer characteristics
The data of typical output and transfer characteristics can be used to calculate conduction losses of the
IGBT. In order to contribute to a much better understanding of these parameters, the IGBT device structure
as well as difference in output characteristic to a power MOSFET is discussed briefly. After this, the
datasheet parameters of the IGBT module are explained.
3.6.1
IGBT device structure and difference in output characteristic of power

MOSFETs and IGBTs.
Figure 6 Structure of Trench-Field-Stop IGBT and two-transistor equivalent circuit (a). Comparative output
characteristics of a power MOSFET and IGBT (b).Figure 6a shows the structure of a trench-field-stop IGBT
with a simplified two-transistor equivalent circuit. The pn-junction of the pnp bipolar transistor, which is
located on the collector side of the IGBT, leads to a diode voltage drop, when IGBT is in conducting mode.
The intrinsic bipolar transistor of the IGBT is driven by a MOSFET. Therefore, the gate driving characteristic
is quite similar to a power MOSFET. But the output characteristic is different, which is illustrated in Figure 6b
schematically. It shows the characteristic of turned-on devices at two two different junction temperatures.
As shown in Figure 6b, the MOSFET is reverse conducting for negative drain-to-source voltages due to its
intrinsic body diode. The IGBT has no body diode and thus an anti-parallel diode has to be used, when this
operating mode is required. The advantage is that the external diode can be optimized separately to the
IGBT.
In conducting state (i.e. positive drain-to-source or collector-emitter voltage), the main difference of these
devices is, that the MOSFET is an unipolar device and leads to an output characteristics, which can be
modelled as an ohmic resistance (Rds(on)). In contrast to the MOSFET, the IGBT has a diode voltage drop. As
a result, at very light load conditions (indicated with 1 in Figure 6b) the MOSFET always has lower
conduction losses than an IGBT.
Both output characteristics depend on the junction temperature. The Rds(on) of a MOSFET typically
increases of a factor of about two, when the junction temperature increases from 25C to 150C. In contrast
to this, the temperature coefficients of an IGBT are much lower. At light load conditions, the conduction
losses even decreases with increasing temperature, due to the lower voltage drop of the pn-junction (see
curves at currents below the indicated operating point with 2 in Figure 6b). At higher currents, the increase of
Application Note
AN2010-09, 2010

the ohmic resistance is dominant. Due to this, a parallel connection of several IGBTs is possible and is
commonly required for high current IGBT power modules.
a)
b)
Emitter
IGBT
Gate
ICE
IDS
IC
Tj1
Tj2
VCE
+
+
nn
p+ p+
MOSFET
ID
VDS
n-
Collector
Tj2
Tj1
1
(substrate)
Tj1
(fieldstop)
Tj2
Tj1 < Tj2
VCE
VDS
p+
Figure 6 Structure of Trench-Field-Stop IGBT and two-transistor equivalent circuit (a). Comparative
output characteristics of a power MOSFET and IGBT (b).
3.6.2
Transfer and output characteristics (IGBT datasheet)
The transfer characteristic shows, that the turn-on threshold voltage decreases with the junction temperature
Figure 7. Since the turn-on threshold voltage is far from zero, high junction temperature will not self turn-on
the IGBT even if zero gate drive voltage is used.
Application Note
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AN2010-09, 2010

Figure 7 Typical tansfer characteristic (datasheet).

As discussed in chapter 3.6.1, the output characteristic of the IGBT depends on the temperature of the
junction. Figure 8a shows the collector current in conducting state characterized over the collector-emitter
voltage at different junction temperatures. For currents lower than about 300 A, the conduction losses
decrease with inceasing temperature. For higher currents, the conduction losses increase slightly. In the
considered case an increase in conduction losses of about 15% at nominal current rating (800 A) and a
temperature increase from 25C to 150C can be oberserved.
Application Note
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AN2010-09, 2010

a)
b)
Linear mode
Figure 8 Typical output characteristics over temperature (a) and gate-emitter voltage variation (b)
(datasheet)
Figure 8b shows the typical output characteristic for different gate-emitter voltages. The IGBT should not be
operated in linear mode, as this causes excessive conduction losses. If the power dissipation is not limited in
value and time, the device might be failing. Using 15 V as typical gate drive voltage, such a linear mode only
occurs for short periods at the switching transitions, which is a normal operating condition for the IGBT.
3.7
Parasitic capacitances
The dynamical characteristics of an IGBT is influenced by parasitic capacitances. A common behavioural

model with three capacitances is shown in Figure 9. The shown input capacitance Cies and the reverse
transfer capacitance Cres are useful for an adequate dimensioning of the gate driving circuit. The output
capacitance Coss limits the dV/dt at switching transistions, whereby Coss related power losses can be usually
neglected in applications using IGBTs.
CGC=
Cres
CCE=
Coss-Cres
CGE=
Cies-Cres
Figure 9 Parasitic capacitances of an IGBT.
Application Note
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AN2010-09, 2010

3.7.1
Measurement circuits
The values of the parasitic capacitances strongly depend on the operating point of the IGBT (i.e. voltage
dependent). In order to measure these capacitances at biased gate or collector-emitter voltages, following
measurement circuits are applied (see Figure 10).
Input capacitance Cies (Figure 10a):
The input capacitance Cies is measured at a biased collector-emitter voltage of typically 25V. The gateemitter voltage is typically set to zero. An inductor is used to keep AC-currents from the gate-emitter voltage
source away from the capacitance bridge.
Output capacitance Coss (Figure 10b):
The output capacitance Coss is measured at biased collector-emitter voltages. An inductor is used to keep
AC-currents from the collector-emitter voltage source away from the capacitance bridge.
Reverse transfer capacitance Cres (Figure 10c):
The reverse transfer capacitance Cres is measured at a biased collector-emitter voltage of typically 25V. The
gate-emitter voltage is typically set to zero. Inductors are used to keep AC-currents from the gate-emitter and
collector-emitter voltage source away from the capacitance bridge.
Application Note
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AN2010-09, 2010

a)
DUT
C1
Capacitance
bridge
E.g. HP4280A
VCE
L
C2
VGE
b)
DUT
C3
L
VGE
C1
C2
c)
Capacitance
bridge
E.g. HP4280A
VCE
DUT
R1
L2
ID
R2
L1
C2
VGE
C1
VCE
Capacitance
bridge
E.g. HP4280A
Figure 10 Basic circuit diagram for measuring the input capacitance C ies (a), output capacitance Coss
(b), and reverse transfer capacitance Cres (c).
3.7.2
Gate charge Qg and gate current
The value of the gate charge is useful to design the gate driving circuit. The average output power that the
gate driving circuit has to deliver can be calculated with data of the gate charge, gate drive voltages and
switching frequency (eq.(5)).
(5)
Using for example 10 kHz and 15 V positive and negative gate driving voltages, the required output power of
the gate driving circuit can be calculated with eq.(6) (Figure 11).
(6)
Application Note
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AN2010-09, 2010

Figure 11 Gate charge and internal gate resistor (datasheet).

The theoretical gate drive peak current can be calculated with data of the gate drive voltages and gate
resistances, which is the sum of external and internal gate drive resistance (eq. (7), Figure 11):
(7)
In practice this peak current will not be achieved, because it is limited by stray inductances and non-ideal
switching transitions of a real gate driving circuit.
3.7.3
Parasitic turn-on
With the parasitic capacitances of the IGBT, characterized in the datasheet, dV/dt induced parasitic turn-on
phenomena can be discussed. The cause of a possible parasitic turn-on is based on the intrinsic capacitive
voltage divider between collector-gate and gate-emitter (see Figure 9).
In consideration of high voltage transients across collector-emitter, this intrinsic capacitive voltage divider is
much faster than an external gate driving circuit, which is limited by parasitic inductances. Therefore, even if
the gate driver switches the IGBT off, i.e., zero gate-emitter voltage, transients of collector-emitter voltage
lead to gate-emitter voltages, which are unequal to the driving voltage. Neglecting the influence of the gate
driving cicuit, the gate-emitter voltage can be calculated with:
(8)
As a result, the quotient Cres/Cies should be as low as possible in order to avoid a parasitic dV/dt induced
turn-on (quotient is about 35, see Figure 12). Furthermore, the input capacitance should be as low as
possible to avoid gate driving losses.
Figure 12 Parasitic capacitances of the IGBT (datasheet).

The parasitic capacitances are characterized at a constant collector-emitter voltage of 25 V (see Figure 12).
The gate-emitter capacitance can be approximated as constant over the collector-emitter voltage (eq. (9)).
The reverse transfer capacitance strongly depends on the collector-emitter voltage and can be estimated
with eq. (10) (see Figure 13):
(9)
(10)
Application Note
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AN2010-09, 2010

102
CGE
C [nF]
101
100
10-1
0 25
CGE
100
200
300
400
VCE [V]
500
600
700
Figure 13 Approximation of input and reverse transfer capacitance over collector-emitter voltage
according to eq. (9) and (10).
Consequently, the robustness against dV/dt induced parasitic turn-on increases with the collector-emitter
voltage (see eq. (8)). A low impedance (i.e. low stray inductance) gate driving circuit also minimizes the risk
of parasitic turn-on events.
3.8
Switching times
The switching times in the datasheet provides useful information in order to determine an appropriate dead
time between turn-on and turn-off of the complementary devices in a half bridge configuration. Please refer
to [1] for further information about setting appropriate dead times. The switching times in the datasheet are
defined as follows and are shown in Figure 14, schematically:
Turn-on delay time (td on): 10% of gate-emitter voltage to 10% of collector current
Rise time (tr): 10% to 90% of collector current
Turn-off delay time (td off): 90% of gate-emitter voltage to 90% of collector current
Fall time (tf): 90% to 10% of collector current
The switching times wil not give reliable information about switching losses, because voltage rise and fall
times as well as current tail is not characterized. Therefore, energy losses per pulse are characterized
separately.
Application Note
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AN2010-09, 2010

VGE
90% VGE
10% VGE
IC
90% IC
90% IC
10% IC
10% IC
2% IC
VCE
10% VCE
2% VCE
td on
tr
td off
tf
P
Eoff
Eon
Figure 14 Schematic switching waveforms with definion of switching times and energy losses.
The characterized switching losses per pulse are defined for the datasheet as the integral:
(11)
The integration limits t1 and t2 are:

Turn-on energy loss per pulse (Eon): 10% of collector current to 2% of collector-emitter voltage
Turn-off energy loss per pulse (Eoff): 10% of collector-emitter voltage to 2% of collector current
Switching times and thus energy losses per pulse strongly depend on a variety of application specific
operating conditions, like gate driving circuit, layout, gate resistance, switching voltages and currents as well
as junction temperature. Therefore, datasheet values can only give an indication for the switching
performance of the power module. For more accurate values detailed simulations, taken into account
application specific parameters or experimental investigations are necessary.
Typically, switching times and energy losses per pulse are characterized at nominal operating conditions for
different temperatures (Figure 15). The characterization of energy losses per pulse over the collector current
and over the gate resistance (Figure 16) gives an indication of the switching performace under typical
operating conditions.
Application Note
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AN2010-09, 2010

Figure 15 Switching times and energy losses (datasheet)
a)
b)
Figure 16 Energy losses per pulse over the collector current and the gate resistance (datasheet)
3.9
Short circuit
The short circuit characteristic strongly depends on application specific parameters, like temperature, stray
inductances, gate driving circuits and the resisance of the short circuit. For device characterization a test
setup as shown in Figure 17a is used. One IGBT is short circuited while the other IGBT is driven with a
single pulse. The corresponding typical voltage and current waveforms are illustrated in Figure 17b. The
current in the conducting IGBT increases rapidly with a current slope, that is dependent on parasitic
inductances and the DC-Link voltage. Due to desaturation of the IGBT, the current is limited to about 5 times
the nominal current (in case of IGBT3) and the collector-emitter voltage remains on the high level. The chip
temperature increases during this short circuit due to high currents and thus power losses. Because of the
Application Note
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AN2010-09, 2010

increasing chip temperature the current decreases slightly while operating in short circuit condition. At a
defined time tp the IGBT is switched off, to avoid a device failure.
a)
b)
V, I
VCE
IC
ISC
VGE
VCE
10% IC
10% IC
VGE
IC
tp
Figure 17 Short circuit test setup (a) and typical voltage/current waveforms during short circuit test
(b).
The data of the measured short circuit test and the applied parameters are noted in the datasheet (see
Figure 18).
Figure 18 Short circuit data (datasheet)
3.10
Leakage currents ICES and IGES
Two major types of leakage currents have to be considered. The value of collector-emitter cut-off current
garantees the upper limit of leakage current, when IGBT is in blocking mode. The gate-emitter leakage
current is measured at maximum gate-emitter voltage. If this value is exceeded, the gate oxide has failures
and the device will fail.
Figure 19 Leakage currents (datasheet)
3.11
Thermal characteristics
The values of power dissipation and current ratings as discussed in chapter 3.2 and 3.3 have no meaning
without specification of temperatures as well as thermal resistance. Therefore, in order to compare different
devices it is also necessary to compare thermal characteristics. Information about the definition of junction
temperatures can be found in [3] and the thermal modeling is discussed in [2]. In following selected aspects
are discussed in order to give a good understanding of the meaning of the datasheet parameters.
When power modules with a flat baseplate or discrete devices are characterized, junction, case, and
heatsink temperatures are noted. In this case, the power module has a baseplate with PinFin structure and is
cooled via cooling fluid. Therefore, the cooling fluid temperature is the equivalent value to the common
Application Note
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AN2010-09, 2010

defined heatsink temperature. As a consequence, the thermal resistance of junction to cooling fluid is
specified in the datasheet (Figure 20), whereby this value is dependend on cooling mixture and flow rate
(Figure 21a).
Figure 20 Thermal resistance IGBT, junction to cooling fluid (datasheet)

Please take note that the resistance of junction to cooling fluid or junction to heatsink have to be considered,
when performance of different power modules are compared.
b)
a)
Figure 21 Thermal resistance (a) and transient thermal impedance junction to cooling fluid (b)
(datasheet).
The power module consists of different materials, which have a specific thermal capacitance and resistance.
As a result, the resistance at higher frequency is lower than the statical resistance. The thermal impedance
can be modelled as shown in Figure 22. The coefficients for this thermal model are characterized in the
datasheet (Figure 21b), whereby the values of the capacitances can be calculated with:
(12)
r1
r2
r3
r4
r5
c1
c2
c3
c4
c5
Tvj
TF
Figure 22 Transient thermal model.
Application Note
20
AN2010-09, 2010

Datasheet parameters Diode
4.1
Forward current IF and forward characteristic
The diode forward current can be calculated similar to IGBT current rating (see chapter 3.3), whereby RthJF of
the diode has to be used:
(13)
Figure 23 shows the typical forward characteristic of the implemented diode at different junction
temperatures. A negative temperature coefficient of the diode forward voltage drop can be observed, which
is characteristic for minority-carrier devices. Therefore, the conduction losses of the diode decrease with
increasing temperatures.
Figure 23 Forward characteristic of diode (datasheet).
4.2
Repetetive peak forward current IFRM
The repetitive peak forward current of the diode is specified accordingly to the IGBT. Please refer to chapter
3.4 for more information.
4.3
Reverse recovery
-
When diode is in conducting state the p-n junction is forward-biased (Figure 24). Holes are injected in the nregion and become minority carriers, which finally recombine with electrons from the n region. Before the
diode can turn into blocking mode, the stored minority charge in n- region has to be reduced by active means
or by passive means, via recombination. Both mechanisms occur simultaneously. The actively removed
minority charge is called recovered charge (Q r). This charge causes a current overshoot at turn-on transition
of the complementary switch in the half-bridge and causes power losses.
Application Note
21
AN2010-09, 2010

IF
+ -
n-
Minority carrier injection
Recombination
Figure 24 Power diode under forward-bias condition.

A schematic current and voltage waveform of a soft-recovery (Emitter Controlled) diode during turn-off
transition is shown in Figure 25. The characterized peak reverse recovery current IRM in datasheet (Figure
26), is defined as difference between the absolute negative current peak and zero current. The recovered
charge Qr as characterized in datasheet (Figure 26), is the integral:
(14)
The integration limits are between zero current of diode and 2% of reverse recovery current peak as shown
in Figure 25.
IF
VR
IF
10% VR
Qr
IF = 0
2% IRM
t
IRM
VR
Prec
Erec
Figure 25 Schematic voltage and current waveform of a soft-recovery diode during turn-off transition.
The losses due to reverse recovery can be calculated with the recovered energy per pulse. The energy is
defined as the integral:
(15)
The integration limits are between 10% of diode reverse voltage and 2% of reverse recovery current peak.
Application Note
22
AN2010-09, 2010

Figure 26 Reverse recovery current, charge, and energy (datasheet)

The recovered charge and thus energy losses caused by the reverse recovery of the diode strongly depend
on junction temperature as well as commutation slope. In order to give an indication of application specific
energy losses, the losses per diode turn-off pulse are characterized in the datasheet as a function of diode
forward currents as well as gate resistance of the switching IGBT. The variation in gate resistance is an
equivalent to a variation in current commutation slopes.
Figure 27 Reverse recovery energy loss per pulse over diode conducting currents and gate
resistance (datasheet)
4.4
Thermal characteristics
The thermal characteristic of the diode is characterized similar to the IGBT. Please refer to chapter 3.11 for
more information.
Application Note
23
AN2010-09, 2010

Datasheet parameters NTC-thermistor
Datasheet parameters NTC-thermistor
5.1
NTC resistance
One of the most important parameters in power electronic devices is the chip temperature. In most cases,
the chip temperature is measured indirectly via a NTC-thermistor. The temperature of the chips can be
calculated using a thermal model and measuring the temperature at the NTC. Please refer to [4] for
information about thermal model and temperature measurement.
The resistance of the NTC can be calculated as a function of the NTC temperature T2:
(16)
The resistance ( ) at temperature
measurement of the actual NTC-resistance (
is specified in the datasheet (Figure 28). With

), the actual temperature can be calculated with:
(17)
The maximum relative deviation of the resistance is defined at a temperature of 100C (see
in Figure
28). In order to avoid self heating of the NTC, the power dissipation has to be limited. The power dissipation,
which heat up the NTC of 1 K is specified in the datasheet (see
in Figure 28). With this value the Rth of
the NTC (NTC to cooling fluid) can be calculated with:
(18)
In order to achieve a self heating of the NTC of lower than 1K, the current through the NTC has to be limited
to the value:
(19)
Figure 28 Characteristic values of NTC-thermistor (datasheet).
5.2
B-values
In order to calculate the actual NTC resistance as well as temperature of the NTC, B-values are required.
The B-value dependends on the considered temperature range. Typically a range of 25 to 100 degree
Celsius is of interest and thus B25/100 has to be used. In case a lower temperature range is in focus, the Bvalues B25/80 or B25/50 can be used, which leads to more accurate calculation of the resistance.
Figure 29 B-values of the NTC-thermistor (datasheet).
Application Note
24
AN2010-09, 2010

Datasheet parameters Module
6.1
Insulation voltage VISOL
The insulation of all terminals together to the baseplate is designed to achieve at least the basic isolation
according to IEC61140 (see Figure 30).
Figure 30 Insulation test voltage (datasheet).

The rated test voltage in the datasheet is tested before and after reliability tests of the power module and is
furthermore part of failure criteria of such stress tests.
The insulation between NTC and other connectors is designed only for a functional isolation (typically with
1.5kV). In case of failures (e.g. the gate driving circuit) a conducting path can be formed by moving bond
wires that change their position during the failure event or by a plasma path forming as a consequence of
arcing during failure. Therefore, if isolation requirements higher than a functional isolation have to be
achieved, additional isolating barriers have to be added externally. Please refer to [4] for more information
about using the NTC inside a power module.
6.2
Stray inductance LS
Stray inductances lead to transient voltages at the switching transients and are a major source of EMI noise.
Furthermore, in combination with parasitic capacitances of the components, they can lead to resonant
circuits, which can cause voltage and current ringing at switching transients.
The transient voltage due to stray inductances can be calculated with:
(20)
As a result, the stray inductances have to be minimized in order to reduce voltage overshoot at turn-off
transitions. A simplified equivalent circuit of the module stray inductances is shown in Figure 31. The stray
inductance of the module is the sum of stray inductances of one phase-leg between the power terminals (see
eq. (21).
(21)
Since a real power module is not ideal symmetric, the stray inductance of each phase-leg is measured and
the maximum value is noted in datasheet (see Figure 32).
Application Note
25
AN2010-09, 2010

P3
P2
L31
L32 L35
L33
P1
L21
L22 L25
L34
N3
L11
L12 L15
L23
L13
L24
L14
N1
N2
Figure 31 Equivalent circuit of a Six-Pack configuration with parasitic inductances. The stray
inductances between power terminals as well as diode and IGBT are simplified.
Figure 32 Stray inductance of module (datasheet).
6.3
Module resistance RCC+EE
The lead resistance of the module is a further contributor to voltage drop and power losses. The specified
value in the datasheet characterizes the lead resistance beween the power terminals of one switch (Figure
33). According to the equivalent circuit shown in Figure 34, the module lead resistance is defined as:
(22)
Figure 33 Module lead resistance (datasheet)
Application Note
26
AN2010-09, 2010

P3
P2
P1
RCC
C
REE REE
1
E
N3
N1
N2
Figure 34 Equivalent circuit of module lead resistance.
6.4
Cooling circuit
The specified value of the preasure drop in the cooling circuit is an important parameter for the design of the
cooling system (see Figure 35). This preasure drop is given for typical cooling conditions, since a cooler as
specified in the datasheet is applied (see Figure 36).
The specified maximum pressure in the cooling circuit, as shown in Figure 35, must never been exceeded,
even for test procedures! Exceeding the maxium pressure may bend the baseplate and the risk is a leakage
of the cooling circuit.
Figure 35 Pressure drop in and maximum pressure in cooling circuit (datasheet)
Application Note
27
AN2010-09, 2010

References
Figure 36 Cooler for characterization of thermal performance and pressure drop in cooling circuit
(datasheet).
6.5
Mounting torque M
The torque for the mechanical mouning and electrical connection of the module is specified in the
datasheet (see Figure 37). These values are important to ensure the right clamping force of the
module to the heatsink and to ensure a reliable electrical connection of bus-bars to the module.
Detailed information and recommendations about the mounting processes are discussed in [6].
Figure 37 Mounting torque requirements (datasheet)
References
The referenced application notes can be found at http://www.infineon.com

[1]
Infineon Application Note AP99007, Deadtime calculation for IGBT Modules.
[2]
Infineon Application Note, Thermal Modeling of Power-electronic Systems
[3]
Infineon Application Note AN2008-1, Definition of junction temperature
[4]
Infineon Application Note AN2009-10, Using the NTC inside a power electronic module
[5]
Infineon Application Note ANIP9931E, Calculation of major IGBT operating parameters
[6]
Infineon Application Note AN2009-11, Mounting Instructions for HybridPACK2 Module
Application Note
28
AN2010-09, 2010
w w w . i n f i n e o n . c o m
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Aut o moti ve I GB T M odule

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Elect ric D rive T rain

Edition Revison 1.0

Automotive IGBT Module

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Automotive IGBT Module

Datasheet parameters IGBT ......................................................................................................... 7

Datasheet parameters Diode......................................................................................................21

Datasheet parameters NTC-thermistor .....................................................................................24

Datasheet parameters Module ...................................................................................................25

Automotive IGBT Module

Target data describes the design goal of the future product.

Automotive IGBT Module

Halfbridge (two IGBTs and freewheeling diodes)

Single switch with IGBT and freewheeling diode

Chopper or buck or boost-converter modules

Implemented collector current [A]

Bidirectional blocking switch

Collector-emitter breakdown voltage in 100V. Value is rounded. Please refer

A: Automotive qualified package

Trench IGBT, fast switching and low Vce,sat

Automotive IGBT Module

Datasheet parameters IGBT

Collector-emitter voltage VCES

Figure 1 Collector-emitter voltage of the IGBT (datasheet)

Total power dissipation Ptot

This parameter describes the maximum feasible power dissipation over:

Therefore, the total power dissipation can be calculated in general with:

Figure 2 Maximum ratings for Ptot (datasheet)

Automotive IGBT Module

Figure 3 DC-collector current (datasheet)

Repetitive peak collector current ICRM

Figure 4 Repetitive peak collector current (datasheet)

Reverse bias safe operating area RBSOA

Automotive IGBT Module

Figure 5 Reverse bias safe operating area (datasheet)

Typical output and transfer characteristics

IGBT device structure and difference in output characteristic of power

Automotive IGBT Module

Tj1 < Tj2

Transfer and output characteristics (IGBT datasheet)

Automotive IGBT Module

Figure 7 Typical tansfer characteristic (datasheet).

Automotive IGBT Module

The dynamical characteristics of an IGBT is influenced by parasitic capacitances. A common behavioural

Figure 9 Parasitic capacitances of an IGBT.

Automotive IGBT Module

Automotive IGBT Module

Gate charge Qg and gate current

Automotive IGBT Module

Figure 11 Gate charge and internal gate resistor (datasheet).

Figure 12 Parasitic capacitances of the IGBT (datasheet).

Automotive IGBT Module

Automotive IGBT Module

The integration limits t1 and t2 are:

Automotive IGBT Module

Figure 15 Switching times and energy losses (datasheet)

Automotive IGBT Module

Figure 18 Short circuit data (datasheet)

Leakage currents ICES and IGES