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CHAPTER 2 :
SEMICONDUCTOR
DEVICES

phyrdows@yahoo.com
Describe in details on P-Type and N-Type
semiconductor.

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1.0

INTRODUCTION

After we discuss whether and how the semiconductor material type N and
P produced, we also discuss electronic components made of semiconductor
materials. Among the electronic components is a popular diodes and transistors.

1.1

DIODE
1.1.1 CONSTRUCTION AND DIODE SYMBOL
Construction of the diode structure is similar to the listing PN. (Unit 2)
diode is an electronic component consisting of two pin anode and
cathode.
The anode is a P-type material and the cathode material of the type
N.
The direction of the arrow (the anode) on the symbol shows the
direction of flow of conventional diodes.
Figure 3.1 shows the structure and the schematic symbol diodes.

Figure 3.1: Construction structure and schematic symbol of a diode.

Anod

Anod

1.1.2 BIAS VOLTAGE

P

N
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Katod

Katod

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The voltage is imposed across the diode called Bias Voltage

With reference to Figure 3.2, when the anode gets more positive than
the cathode voltage or cathode voltage gets more negative than the
anode, the diode is said to be in forward bias.
When the anode voltage gets more negative than the cathode or
cathodes get more positive voltage than the anode, the diode is said to
be in reverse bias.

Figure 3.2: Forward bias and reverse bias diode schematic circuit.
Example:
State whether the diode is in forward bias or reverse bias.

Answer :
a) diode forward bias voltage for the anode gets more positive than the
cathode.
b) because the diode reverse bias voltage gets more negative anode
from the cathode.

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QUESTION
Determine whether state diode forward bias or reverse bias.

g.

Sketch diode (underlined in the box broken) so he was limping forward.

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ANSWER
a.
b.
c.
d.
e.
f.
g.

Forward bias
Forward bias
Reverse bias
Forward bias
Reverse bias
Reverse bias

1.1.3 IV CURVE CHARACTERISTICS FOR A DIODE

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When a diode is forward biased and reverse biased, in which each

value of the bias voltage is recorded, and for every value of the bias
voltage also note the values of current flowing through the diode, then
a graph Mark IV curve of the diode will be produced as shown in Figure
3.3.

Figure 3.3: IV curve characteristics of a diode.

Home Current (Id) is the current flowing through the diode forward
bias current. Id usually measured in mA.
Reverse Current (Is) is a very small current of leakage current flowing
through the diode during reverse bias. Is usually measured in A.
The knee voltage is the voltage at the point where the force of the
current rise suddenly. Knee voltage equal to the voltage barrier. (Si =
0.7 V, Ge = 0.3 V)
breakdown voltage is the voltage level at which the occurrence of a
reverse current increases suddenly. Large current beyond the point of
breakdown can cause burns and damaged PN listings.

1.1.4 IDEAL DIODE CONCEPT

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When diodes operate, the diode characteristics would complicate the

work of analyzing electronic circuits. Such features include: a. voltage Barrier
b. flow Home
c. Reverse current (leakage current)
The concept of an ideal diode, the diode voltage is considered to
have no barriers, no leakage, no front resistivity (rd) and no point of
breakdown.
Figure 3.4 shows the characteristic curve of the diode to be superior
when some things are ignored.

Figure 3.4: IV curve characteristics for ideal diode.

The concept of an ideal diode, the current forward bias diode
switches closed (ON) due to resistance is empty and there is no
voltage drop.

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During reverse bias, the diode switches diumpama open the infinity
resistance and no any leakage.

Figure 3.5: Forward bias and reverse bias ideal diode.

Example:
Calculate the output voltage for the circuit below:

Answer:
Diode is in forward bias (resistance = 0)

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QUESTION
1. Calculate the output voltage for the circuit:

2. When a large current flow through a diode, therefore the diode is in

a. Forward bias
b. Reverse bias
c. Weak
d. Inverted
3. A diode which do not let current flow is said to be in
a. Forward bias
b. Moving forward
c. Weak
d. Reverse bias
4. Barrier potential in a diode is equal to
a. Supply voltage
b. Voltage drop
c. Breakdown voltage
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d. Front voltage
5. If forward resistance (Rd) is ignored, the IV curve after barrier potential will be
a. Horizontal
b. Vertical
c. Angle at 45o
d. Other than a, b and c

ANSWER
1. a. -10V
b. 0V
c. 10V

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2.
3.
4.
5.

1.2

a
d
b
a

ZENER DIODE
Zener diode is very important in power supply circuit. It is used as the voltage

stabilizer.
The symbol for a Zener diode is shown in Figure 3.6.

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Figure 3.6: Schematic symbol for Zener diode.

1.2.1 ZENER DIODE IV CURVE
Figure 3.7 shows the IV curve for a Zener diode.

Figure 3.7: IV curve for a Zener diode.

During a forward bias, not much different from the characteristic
curves with ordinary diodes.
During reverse bias, the curve at the point of breakdown current rise
is sharper and steeper.
zener diodes difference compared with ordinary diode is zener diode
operation during reverse bias.
During the lame, the zener diode operates like a normal diode.
Among the highlights of the zener diode is: i.

It is made to be able to conduct the inverse of the highest

value without damaging the diodes.

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ii.

On Takada zener voltage across the diode and its aftermath

iii.

will continue and equal to the zener voltage.

zener diode can be made so that the zener voltage is
measured at a chosen value (2.4V - 200V).

1.2.2 IDEAL ZENER DIODE

During the zener diode zener operating in the area, the voltage
across the diode is equal to the zener voltage (Vd = Vz). Any change of
the external voltage will only change the current through it.
Therefore, the zener diode is considered as a valuable battery Vz.
(Figure 3.8)

Figure 3.8: Ideal Zener diode.

Example:
If the Zener diode in Figure 3.9 has a breakdown potential of 10V,
calculate the output voltage.

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Figure 3.9: Zener diode.

Answer
As the Zener diode is in forward bias, we assume the Zener diode as a
battery which the potential is equal to the breakdown potential (ideal
Zener diode).

1.3

LED
LED is a special type of diode that emits light when connected in a circuit. It
is commonly used as an indicator light to determine whether the electrical
equipment is turned "ON" and "OFF".

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Figure 3.10 shows the schematic symbol for the LED. LED symbol is similar
to the diode symbol. An arrow pointing out of the PN listings show light out of
the LED.

Figure 3.10: Schematic symbol of LED.

As the diode, LED will operate when given the bias voltage. The electrons
from the N-type material will be merged with hol on material type P. If the
semiconductor material is silicon and germanium merger will generate heat.
But if the semiconductor material is gallium arsenide (GaAs), gallium
phosphide (GaP) and gallium-phosphide-ardenide (GaAsP) The merger will
produce light. The color of light depends on the type of material used
GaAs

infrared radiation

GaP

red or green

GaAsP

red or yellow

Led operate at a low voltage of between 1 and 4 V and a current of between

10 and 40 mA. LEDs also have a low breakdown voltage of about 3 and 5 V.
The voltage and current that exceeds the limit will damage the LED chip. LED
brightness depending on the tide.

1.4

DWIPOLAR TRANSISTOR
As diodes, transistors are made of grafting material type N and P but
contains three layers. The layers were either NPN or PNP.

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Figure 3.11: Construction structure and symbol of NPN and PNP transistor.
The direction of the arrowheads of the transistor symbol indicates the
direction of conventional current flow when the transistor operates.
The type NPN or PNP transistor, the base layer is very thin and is done in
order to contain only a small majority current carriers.
The manufacturer acts as supplier of charges or the majority current carriers
in a transistor.
Collector is responsible for collecting charges for operation of the circuit.
The site also serves as a junction that will control the current flow.

1.4.1 BIAS VOLTAGE

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To enable a transistor is operating properly, they must be given bias

voltage.
There are two types of bias voltage to be supplied to the transistor as
a condition to enable it to operate, regardless of the type NPN or PNP
transistor. With the help of diagrams 3:12 two conditions are:
i. a listing E - B must obtain the bias voltage.
ii. Listing C - B must obtain reverse bias voltage.

Figure 3.12: Transistor bias voltage.

1.4.2 TRANSISTOR OPERATIONAL

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Figure 3.13 : Current flow in a transistor.

Refer to the diagram above 3.13, since the listing E - B was limping
forward by V1, the circuit E - B that will flow because the electrons on
the manufacturer (type N) will be rejected by the inability negative
supply V1. These electrons try to go to the V1 through its inability
positive (P type). But because the site is just a very thin layer of the hol
and have very little, not all the electrons can flow. Only a few electron
current flowing in the base circuit, known as the base current (IB).
remaining electrons accumulated in abundance in the base. Because
the collector has been linked to the positive terminal of V2 will, it will
attract the positive potential of electrons collected on site before flowing
through the collector circuit as collector current (IC).

Figure 3.14: Direction of current flow in a transistor.

The arrows in the diagram above illustrates 3:14 electron current flow
resulting in transistor. IC is shown that a large fraction of IE and IE
small fraction flows as IB. From here comes the formula:

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Chapter 2 : semiconductor DEVICES | DJM2032 Electronic System