Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4508AX

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current

VBE = 0 V

tf

Fall time

5.0
4.0
0.35
0.17

1500
800
8
15
45
3.0
0.48
-

V
V
A
A
W
V
A
A
s
s

PINNING - SOT399
PIN

PIN CONFIGURATION

DESCRIPTION

base

collector

emitter

Ths 25 C
IC = 5.0 A; IB = 1.25 A
f = 16kHz
f = 64kHz
ICsat = 5A; f = 16kHz
ICsat = 4A; f = 64kHz

case isolated

SYMBOL

case

b
e

1 2 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL

PARAMETER

CONDITIONS

VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj

Collector-emitter voltage peak value

Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature

VBE = 0 V

Ths 25 C

MIN.

MAX.

UNIT

-55
-

1500
800
8
15
4
6
5
45
150
150

V
V
A
A
A
A
A
W
C
C

TYP.

MAX.

UNIT

2.8

K/W

35

K/W

THERMAL RESISTANCES
SYMBOL

PARAMETER

CONDITIONS

Rth j-hs

Junction to heatsink

with heatsink compound

Rth j-a

Junction to ambient

in free air

1 Turn-off current.

May 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4508AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Visol

Repetitive peak voltage from all

three terminals to external
heatsink

R.H. 65 % ; clean and dustfree

Cisol

Capacitance from T2 to external f = 1 MHz

heatsink

MIN.

TYP.

MAX.

UNIT

2500

22

pF

MIN.

TYP.

MAX.

UNIT

1.0
2.0

mA
mA

7.5
800

13.5
-

100
-

A
V
V

0.85
4.2

0.94
12
5.7

3.0
1.03
7.3

V
V

TYP.

MAX.

UNIT

80

pF

3.2
0.35

4.3
0.48

s
s

1.9
0.17

s
s

STATIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL
ICES
ICES
IEBO
BVEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE

PARAMETER
Collector cut-off current

CONDITIONS
2

VBE = 0 V; VCE = VCESMmax

VBE = 0 V; VCE = VCESMmax;
Tj = 125 C
Emitter cut-off current
VEB = 6.0 V; IC = 0 A
Emitter-base breakdown voltage
IB = 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA;
L = 25 mH
Collector-emitter saturation voltages IC = 5.0 A; IB = 1.25 A
Base-emitter saturation voltage
IC = 5.0 A; IB = 1.25 A
DC current gain
IC = 100 mA; VCE = 5 V
IC = 5.0 A; VCE = 5 V

DYNAMIC CHARACTERISTICS
Ths = 25 C unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

Cc

Collector capacitance

IE = 0 A; VCB = 10 V; f = 1 MHz

Switching times (16 kHz line

deflection circuit)

ICsat = 5.0 A;IB1 = 1.0 A

(IB2 = -2.5 A)

ts
tf

Turn-off storage time

Turn-off fall time
Switching times (64 kHz line
deflection circuit)

ts
tf

ICsat = 4.0 A;IB1 = 0.8 A

(IB2 = -2.0 A)

Turn-off storage time

Turn-off fall time

2 Measured with half sine-wave voltage (curve tracer).

May 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4508AX

ICsat

+ 50v

90 %

100-200R
IC

10 %

Horizontal
tf

Oscilloscope

ts
IB
IB1

Vertical

1R

100R
6V
30-60 Hz

- IB2

Fig.1. Test circuit for VCEOsust.

Fig.4. Switching times definitions.

IC / mA

+ 150 v nominal
adjust for ICsat

Lc
250
200

LB

IBend

100

0
VCE / V

T.U.T.
Cfb

-VBB

min
VCEOsust

Fig.2. Oscilloscope display for VCEOsust.

TRANSISTOR
IC

Fig.5. Switching times test circuit.

ICsat

100

hFE

DIODE

Ths = 25 C
Ths = 85 C

VCE = 1V

IB1

IB

10

t
20us

26us

IB2

64us
VCE
1
0.001

Fig.3. Switching times waveforms (16 kHz).

May 1998

0.01

0.1

IC / A

10

Fig.6. High and low DC current gain.

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4508AX

hFE

100

10

ts/tf / us

ICsat = 5 A
Ths = 85 C
Freq = 16 kHz

Ths = 25 C
Ths = 85 C

VCE = 5V

ts

6
10

2
tf
1
0.001

0.01

0.1

10

IC / A

Fig.7. High and low DC current gain.

BU4508AF/X/Z

VCEsat / V

10

0.5

1.5

2.5 IB / A 3

Fig.10. Typical collector storage and fall time.

IC =5 A; Tj = 85C; f = 16kHz

120

Normalised Power Derating

PD%

with heatsink compound

110
Ths = 25 C
Ths = 85 C

100
90
80
70

60
50
40

IC/IB = 5

0.1

30
20
10
0
0

0.01
0.1

10

IC / A

Fig.8. Typical collector-emitter saturation voltage.

1.2

40

60

80
Ths / C

100

120

140

Fig.11. Normalised power dissipation.

PD% = 100PD/PD 25C
Zth K/W

BU4508AF/X/Z

VBEsat / V

20

100

BU4508AF

10

Ths = 25 C
Ths = 85 C

1.1

0.5
1
0.2

IC = 5 A

0.1
0.05
0.1

0.9

0.02

0.8

IC = 4 A

PD

0.01

tp

D=

tp
T

0.7
0

0.6

0.001
1.0E-07

0.5

1.5

2.5 IB / A 3

1.0E-03

1.0E-01

t
1.0E+01

t/s

Fig.9. Typical base-emitter saturation voltage.

May 1998

T
1.0E-05

Fig.12. Transient thermal impedance.

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

10

BU4508AX

Ic(sat) (A)

20

40
60
Frequency (kHz)

80

100

Fig.13. ICsat during normal running vs. frequency of

operation for optimum performance

May 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4508AX

MECHANICAL DATA
Dimensions in mm

5.8 max

16.0 max

Net Mass: 5.88 g

3.0

0.7
4.5
3.3

10.0
27
max

25
25.1
25.7

22.5
max
5.1
2.2 max
18.1
min

4.5
1.1
0.4 M
2
5.45

0.9 max

5.45

3.3

Fig.14. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

May 1998

Rev 1.000

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4508AX

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

May 1998

Rev 1.000