TLP5211,TLP5212,TLP5214

TOSHIBA Photocoupler

GaAs Ired & PhotoTransistor

TLP5211,TLP5212,TLP5214
Programmable Controllers
AC/DCInput Module
Solid State Relay

Unit in mm

The TOSHIBA TLP5211, 2 and 4 consist of a phototransistor

optically coupled to a gallium arsenide infrared emitting diode.
The TLP5212 offers two isolated channels in an eight lead plastic DIP
package, while the TLP5214 provides four isolated channels in a
sixteen plastic DIP package.

Collectoremitter voltage: 55 V (min)

Current transfer ratio: 50% (min)

TOSHIBA

115B2

Weight: 0.26 g

Rank GB: 100% (min)

Isolation voltage: 2500 Vrms (min)

UL recognized
made in Japan: UL1577, file No. E67349
made in Thailand: UL1577, file No. E152349

Pin Configurations (top view)

TLP521-2

TLP521-1

TLP521-4

16

15

14

13

12

11

10

TOSHIBA

1110C4

Weight: 0.54 g
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector

1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector

: Anode
1, 3, 5, 7
: Cathode
2, 4, 6, 8
9, 11, 13, 15 : Emitter
10, 12, 14, 16 : Collector

TOSHIBA

1120A3

Weight: 1.1 g

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TLP5211,TLP5212,TLP5214
Absolute Maximum Ratings (Ta = 25C)
Rating
Characteristic
Forward current

Detector

LED

Forward current derating

Symbol

TLP5211

TLP5212
TLP5214

Unit

IF

70

50

mA

IF /C

0.93 (Ta 50C)

0.5 (Ta 25C)

mA /C

Pulse forward current

IFP

1 (100 pulse, 100pps)

Reverse voltage

VR

Junction temperature

Tj

125

Collectoremitter voltage

VCEO

55

Emittercollector voltage

VECO

Collector current

IC

50

mA

Collector power dissipation

(1 circuit)

PC

150

100

mW

PC /C

1.5

1.0

mW /C

Collector power dissipation

derating (1 circuit Ta 25C)
Junction temperature

Tj

125

Storage temperature range

Tstg

55~125

Operating temperature range

Topr

55~100

Lead soldering temperature

Tsol

260 (10 s)

Total package power dissipation

PT

250

150

mW

Total package power dissipation

derating (Ta 25C)

PT /C

2.5

1.5

mW /C

Isolation voltage

BVS

2500 (AC, 1min., R.H. 60%)

(Note 1)

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.

Recommended Operating Conditions

Characteristic

Symbol

Min

Supply voltage

VCC

Forward current

IF

Collector current
Operating temperature

Typ.

Max

Unit

24

16

25

mA

IC

10

mA

Topr

25

85

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

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TLP5211,TLP5212,TLP5214

Type

TLP521

TLP5212
TLP5214

Classi
fication (*1)

Current Transfer Ratio (%)

(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25C

Marking Of
Classification

Min

Max

50

600

Blank, Y, Y , G, G , B, B , GB

Rank Y

50

150

Y, Y

Rank GR

100

300

G, G

Rank BL

200

600

B, B

Rank GB

100

600

G, G , B, B , GB

50

600

Blank, GR, BL, GB

Rank GB

100

600

GR, BL, GB

*1: Ex. rank GB: TLP5211 (GB)

(Note): Application type name for certification test, please use standard product type name, i.e.
TLP5211 (GB): TLP5211, TLP5212 (GB): TLP5212

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TLP5211,TLP5212,TLP5214
Individual Electrical Characteristics (Ta = 25C)

Detector

LED

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Forward voltage

VF

IF = 10 mA

1.0

1.15

1.3

Reverse current

IR

VR = 5 V

10

Capacitance

CT

V = 0, f = 1 MHz

30

pF

Collectoremitter
breakdown voltage

V(BR) CEO

IC = 0.5 mA

55

Emittercollector
breakdown voltage

V(BR) ECO

IE = 0.1 mA

VCE = 24 V

10

100

nA

VCE = 24 V, Ta = 85C

50

V = 0, f = 1 MHz

10

pF

MIn

Typ.

Max

Unit

50

600

100

600

Collector dark current

ICEO

Capacitance
(collector to emitter)

CCE

Coupled Electrical Characteristics (Ta = 25C)

Characteristic
Current transfer ratio

Saturated CTR

Collectoremitter
saturation voltage

Symbol
IC / IF

IC / IF (sat)

VCE (sat)

Test Condition
IF = 5 mA, VCE = 5 V
Rank GB

IF = 1 mA, VCE = 0.4 V

Rank GB

60

30

IC = 2.4 mA, IF = 8 mA

0.4

IC = 0.2 mA, IF = 1 mA
Rank GB

0.2

0.4

Min

Typ.

Max

Unit

pF

Isolation Characteristics (Ta = 25C)

Characteristic

Symbol

Test Condition

Capacitance
(input to output)

CS

VS = 0, f = 1 MHz

0.8

Isolation resistance

RS

VS = 500 V, R.H. 60%

10

AC, 1 minute
Isolation voltage

BVS

11

2500

AC, 1 second, in oil

5000

DC, 1 minute, in oil

5000

Vrms
Vdc

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Switching Characteristics (Ta = 25C)
Characteristic

Symbol

Rise time

Test Condition

Min

Typ.

Max

tr

Fall time

tf

Turnon time

ton

VCC = 10 V
IC = 2 mA
RL = 100

Turnoff time

toff

Turnon time

tON

15

25

Storage time

ts

Turnoff time

tOFF

Fig.1 : SWITCHING
IF

RL = 1.9 k (Fig.1)
VCC = 5 V, IF = 16 mA

Unit

TIME TEST CIRCUIT

IF
RL

VCC

tS

VCE

VCE

4.5V
0.5V

tON

tOFF

VCC

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IF Ta
100

80

80

Allowable forward current

IF (mA)

Allowable forward current

IF (mA)

TLP521-1
100

60

40

20

0
-20

20

40

60

40

20

Ambient temperature Ta (C)

240

120

Allowable collector power

dissipation PC (mW)

160

120

80

60

80

100

TLP521-2
TLP521-4

80

100

PC Ta

80

60

40

20

40

0
-20

20

40

60

80

0
-20

100

IFP DR

TLP521-1
3000

20

3000

Pulse width 100s

TLP521-2
TLP521-4

Pulse width 100s

Ta = 25C

Allowable pulse forward

current IFP (mA)

1000
500
300

100
50
30

10-3

10-2

Duty cycle ratio

60

IFP DR

Ta = 25C

10
3

40

Ambient temperature Ta (C)

Ambient temperature Ta (C)

Allowable pulse forward

current IFP (mA)

40

100

200

Allowable collector power

dissipation PC (mW)

20

Ambient temperature Ta (C)

PC Ta

TLP521-1

IF Ta

60

0
-20

100

80

TLP521-2
TLP521-4

10-1

1000
500
300

100
50
30

10
3

100

DR

10-3

10-2

Duty cycle ratio

10-1

100

DR

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100

VF/Ta

IF VF
Ta=25C

Forward voltage temperature

coefficient VF/Ta (mV/C)

Forward current IF

(mA)

30

10
5
3

1
0.5

0.1
0.4

0.8

0.6

1.0

1.4

1.2

Forward voltage VF

-2.0

-1.6

-1.2

-0.4
0.1

1.6

0.3

(V)

10

Collector dark current ICEO

(A)

500 Repetitive frequency =100Hz

300 Ta = 25C

100
50
30

10
5
3

10

10

10

10

10
0.8

1.2

1.6

Pulse forward voltage

2.0

-1

-2

-3

-4

2.4

80

40

VFP (V)

(mA)
50mA

Collector current IC

(mA)
Collector current IC

()

IC VCE

60

30mA
20mA
15mA
PC(MAX.)

10mA
20

IF=5mA

160

120

Ambient temperature Ta

50mA

25

10V
5V

VCE=24V

Ta=25C

(mA)

IF

IC VCE
80

40

30

10

ICEO Ta

Pulse width 10s

0.4

Forward current

IFP VFP

1000

Pulse forward current IFP (mA)

-2.4

-0.8

0.3

IF

-2.8

50

1
0

Collector-emitter voltage

20

20mA

15

10mA

10

5mA

0
0

10

VCE (V)

40mA
30mA

IF=2mA

0.2

0.4

0.6

0.8

Collector-emitter voltage

Ta=25C

1.0

1.2

1.4

VCE (V)

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IC IF

100

300

Current transfer ratio

IC /IF (%)

Collector current IC (mA)

30

10
Sample

IC/IF IF

500

Ta = 25C
VCE=5V
50
VCE=0.4V

5
3
Sample

Sample

100
Sample

50
30

Ta = 25C
VCE=5V
VCE=0.4V

10
5
0.3

10

30

Forward current IF

0.5

100

(mA)

0.3

VCE(sat) Ta
0.20

Collector-emitter saturation
voltage VCE(sat) (V)

0.1
0.05
0.03
0.3

10

Forward current IF

30

100

(mA)

IF = 5mA
IC = 1mA

0.16

0.12

0.08

0.04

-20

IC Ta
1000
500

10mA

5
3

1mA

IF = 0.5mA

100

tS

50
30

10
5

0.3

0.1

-20

20

100

tOFF

10

Switching time (s)

Collector current IC (mA)

300

80

Ta = 25C
IF = 16mA
VCC= 5V

5mA

0.5

60

Ta ()

RL Switching Time

VCE = 5V

25mA
50

40

Ambient temperature

100

30

20

40

Ambient temperature

60

80

1
1

100

tON

10

30

100

300

Load resistance RL (k)

Ta ()

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TLP5211,TLP5212,TLP5214

RESTRICTIONS ON PRODUCT USE

20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

2007-10-01