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Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
G
S
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
24V
0.8m
1.0m
429A
240A
S
G
D 2Pak 7 Pin
Package Type
IRF1324S-7PPbF
D Pak-7Pin
Gate
Drain
Source
Standard Pack
Form
Quantity
Tube
50
IRF1324S-7PPbF
800
IRF1324STRL-7PP
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dv/dt
TJ
TSTG
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
c
Max.
Units
429
303
240
1640
300
2.0
20
1.6
-55 to + 175
c
c
W
W/C
V
V/ns
C
230
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Thermal Resistance
Symbol
RJC
RJA
Parameter
Junction-to-Case
Typ.
Max.
Units
0.50
40
C/W
IRF1324S-7PPbF
Static @ TJ = 25C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS
IGSS
RG
2.0
0.023
0.80 1.0
4.0
20
250
200
-200
3.0
Conditions
Parameter
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
270
180
47
58
122
19
240
86
93
7700
3380
1930
4780
4970
252
S
nC
Conditions
VDS = 50V, ID = 160A
ID = 75A
VDS =12V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 16V
ID = 160A
RG =2.7
VGS = 10V
VGS = 0V
VDS = 19V
= 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 19V , See Fig.11
VGS = 0V, VDS = 0V to 19V
ns
pF
i
h
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
IRRM
ton
ISM
d
Conditions
MOSFET symbol
1636
showing the
integral reverse
429
1.3
V
71
107
ns
74
110
83
120
nC
TJ = 125C
92
140
2.0
A TJ = 25C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction ISD 160A, di/dt 600A/s, VDD V(BR)DSS, TJ 175C.
Pulse width 400s; duty cycle 2%.
temperature. Package limitation current is 240A. Note that current
Coss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as Coss while VDS is rising from 0 to 80% VDSS.
some lead mounting arrangements.(Refer to AN-1140
C
oss eff. (ER) is a fixed capacitance that gives the same energy as
http://www.irf.com/technical-info/appnotes/an-1140.pdf
C
oss while V DS is rising from 0 to 80% VDSS .
Repetitive rating; pulse width limited by max. junction
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
temperature.
mended footprint and soldering techniques refer to application note #AN-994.
Limited by TJmax, starting TJ = 25C, L = 0.018mH
R is measured at TJ approximately 90C
RG = 25, IAS = 160A, VGS =10V. Part not recommended for use
above this value.
IRF1324S-7PPbF
1000
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
BOTTOM
TOP
TOP
100
BOTTOM
100
4.5V
10
0.1
10
4.5V
10
100
0.1
100
1.8
100
10
1000
T J = 175C
10
TJ = 25C
1
VDS = 15V
60s PULSE WIDTH
0.1
2
1.4
1.2
1.0
0.8
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
ID= 75A
C oss = C ds + C gd
Ciss
Coss
10000
VGS = 10V
1.6
0.6
ID = 160A
C, Capacitance (pF)
Crss
1000
10.0
VDS= 19V
VDS= 12V
8.0
6.0
4.0
2.0
0.0
10
100
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
50
100
150
200
IRF1324S-7PPbF
10000
1000
T J = 175C
1000
100
1msec
100
T J = 25C
10
10msec
10
Tc = 25C
Tj = 175C
Single Pulse
VGS = 0V
1.0
0.5
1.0
1.5
2.0
2.5
300
250
200
150
100
50
0
50
75
100
125
150
175
Limited By Package
350
25
10
100
450
400
Id = 5mA
31
30
29
28
27
26
25
24
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( C )
1000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ID
TOP
45A
80A
BOTTOM 160A
900
800
700
600
500
400
300
200
100
0
-5
10
15
20
25
DC
1
0.0
Energy (J)
100sec
25
50
75
100
125
150
175
IRF1324S-7PPbF
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
Ci= i/Ri
Ci i/Ri
1E-005
i (sec)
0.02070
0.000010
0.08624
0.000070
0.24491
0.001406
0.15005
0.009080
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (C/W)
R4
R4
0.0001
0.001
0.01
0.1
1000
0.01
100
0.05
0.10
10
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
IRF1324S-7PPbF
250
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 160A
200
150
100
50
0
25
50
75
100
125
150
175
4.5
4.0
3.5
3.0
2.5
ID = 250A
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
-75 -50 -25 0
T J , Temperature ( C )
IRF1324S-7PPbF
Driver Gate Drive
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
D=
Period
P.W.
+
-
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple 5%
15V
DRIVER
VDS
D.U.T
RG
+
V
- DD
IAS
20V
0.01
tp
I AS
VDS
VDS
90%
+
VDD D.U.T
10%
VGS
VGS
td(on)
td(off)
tr
tf
L
DUT
1K
20K
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
IRF1324S-7PPbF
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF1324S-7PPbF
D2Pak - 7 Pin Part Marking Information
PART NUMBER
INTERNATIONAL
RECTIFIER LOGO
F1324S-7P
YWWP
17
ASSEMBLY
LOT CODE
89
DATE CODE
Y = YEAR
W = WEEK
P = LEADFREE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
IRF1324S-7PPbF
Qualification information
Industrial
Qualification level
guidelines)
MS L1
D Pak-7PIN
RoHS compliant
Revision History
Date
4/8/2014
Comments