You are on page 1of 10

IRF1324S-7PPbF

HEXFET Power MOSFET

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits

VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)

G
S

Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free

24V
0.8m
1.0m
429A
240A

S
G

D 2Pak 7 Pin

Base part number

Package Type

IRF1324S-7PPbF

D Pak-7Pin

Gate

Drain

Source

Standard Pack
Form

Orderable Part Number

Quantity

Tube

50

IRF1324S-7PPbF

Tape and Reel Left

800

IRF1324STRL-7PP

Absolute Maximum Ratings


Symbol
ID @ TC = 25C
ID @ TC = 100C
ID @ TC = 25C
IDM
PD @TC = 25C
VGS

Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)

Pulsed Drain Current


Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds

dv/dt
TJ
TSTG

Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR

Single Pulse Avalanche Energy


Avalanche Current
Repetitive Avalanche Energy

c

Max.

Units

429
303
240
1640
300
2.0
20
1.6
-55 to + 175

c
c

Continuous Drain Current, VGS @ 10V (Silicon Limited)

W
W/C
V
V/ns
C

300 (1.6mm from case)

230
See Fig. 14, 15, 22a, 22b,

mJ
A
mJ

Thermal Resistance
Symbol
RJC
RJA

Parameter

Junction-to-Case

Junction-to-Ambient (PCB Mount) , D Pak

www.irf.com 2014 International Rectifier

Typ.

Max.

Units

0.50
40

C/W

Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF
Static @ TJ = 25C (unless otherwise specified)
Symbol

Parameter

V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
IDSS

Drain-to-Source Breakdown Voltage


Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage


Gate-to-Source Reverse Leakage
Internal Gate Resistance

RG

Min. Typ. Max. Units


24

2.0


0.023
0.80 1.0

4.0

20
250
200
-200
3.0

Conditions

V VGS = 0V, ID = 250A


V/C Reference to 25C, ID = 5mA
m VGS = 10V, ID = 160A
V VDS = VGS, ID = 250A
A VDS = 24V, VGS = 0V
VDS = 19V, VGS = 0V, TJ = 125C
nA VGS = 20V
VGS = -20V

Dynamic @ TJ = 25C (unless otherwise specified)


Symbol

Parameter

gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)

Min. Typ. Max. Units

Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

270

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

180
47
58
122
19
240
86
93
7700
3380
1930
4780
4970

252

S
nC

Conditions
VDS = 50V, ID = 160A
ID = 75A
VDS =12V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 16V
ID = 160A
RG =2.7
VGS = 10V
VGS = 0V
VDS = 19V
= 1.0MHz, See Fig.5
VGS = 0V, VDS = 0V to 19V , See Fig.11
VGS = 0V, VDS = 0V to 19V

ns

pF

i
h

Diode Characteristics
Symbol
IS

Parameter
Continuous Source Current

VSD
trr

(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time

Qrr

Reverse Recovery Charge

IRRM
ton

Reverse Recovery Current


Forward Turn-On Time

ISM

d

Min. Typ. Max. Units

Conditions

MOSFET symbol

1636

showing the
integral reverse

429

p-n junction diode.


TJ = 25C, IS = 160A, VGS = 0V
TJ = 25C
VR = 20V,
TJ = 125C
IF = 160A
di/dt = 100A/s
TJ = 25C


1.3
V

71
107
ns

74
110

83
120
nC
TJ = 125C

92
140

2.0

A TJ = 25C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Calculated continuous current based on maximum allowable junction ISD 160A, di/dt 600A/s, VDD V(BR)DSS, TJ 175C.
Pulse width 400s; duty cycle 2%.
temperature. Package limitation current is 240A. Note that current
Coss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as Coss while VDS is rising from 0 to 80% VDSS.
some lead mounting arrangements.(Refer to AN-1140

C
oss eff. (ER) is a fixed capacitance that gives the same energy as
http://www.irf.com/technical-info/appnotes/an-1140.pdf
C
oss while V DS is rising from 0 to 80% VDSS .
Repetitive rating; pulse width limited by max. junction
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
temperature.
mended footprint and soldering techniques refer to application note #AN-994.
Limited by TJmax, starting TJ = 25C, L = 0.018mH
R is measured at TJ approximately 90C
RG = 25, IAS = 160A, VGS =10V. Part not recommended for use
above this value.

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF
1000

1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V

BOTTOM

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

100

BOTTOM

100

4.5V
10
0.1

60s PULSE WIDTH


Tj = 175C

60s PULSE WIDTH


Tj = 25C

10

4.5V

10
100

0.1

V DS, Drain-to-Source Voltage (V)

100

1.8

100

RDS(on) , Drain-to-Source On Resistance


(Normalized)

ID, Drain-to-Source Current (A)

10

Fig 2. Typical Output Characteristics

1000

T J = 175C

10
TJ = 25C
1
VDS = 15V
60s PULSE WIDTH

0.1
2

1.4
1.2
1.0
0.8

-60 -40 -20 0 20 40 60 80 100120140160180


T J , Junction Temperature (C)

Fig 4. Normalized On-Resistance vs. Temperature


12.0

VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd

VGS, Gate-to-Source Voltage (V)

ID= 75A

C oss = C ds + C gd

Ciss
Coss

10000

VGS = 10V

1.6

0.6

Fig 3. Typical Transfer Characteristics


100000

ID = 160A

VGS, Gate-to-Source Voltage (V)

C, Capacitance (pF)

V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Crss

1000

10.0

VDS= 19V
VDS= 12V

8.0
6.0
4.0
2.0
0.0

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage


3

VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V

www.irf.com 2014 International Rectifier

50

100

150

200

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage


Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF
10000

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

1000

T J = 175C

OPERATION IN THIS AREA


LIMITED BY R DS(on)

1000

100

1msec

100

T J = 25C
10

10msec

10
Tc = 25C
Tj = 175C
Single Pulse

VGS = 0V
1.0
0.5

1.0

1.5

2.0

2.5

VSD, Source-to-Drain Voltage (V)

ID, Drain Current (A)

300
250
200
150
100
50
0
50

75

100

125

150

175

V(BR)DSS , Drain-to-Source Breakdown Voltage (V)

Limited By Package

350

25

10

100

Fig 8. Maximum Safe Operating Area

450
400

VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode


Forward Voltage
32

Id = 5mA
31
30
29
28
27
26
25
24
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( C )

T C , Case Temperature (C)

Fig 10. Drain-to-Source Breakdown Voltage

Fig 9. Maximum Drain Current vs.


Case Temperature
1.4

EAS , Single Pulse Avalanche Energy (mJ)

1000

1.2
1.0
0.8
0.6
0.4
0.2
0.0

ID
TOP
45A
80A
BOTTOM 160A

900
800
700
600
500
400
300
200
100
0

-5

10

15

20

25

VDS, Drain-to-Source Voltage (V)

Fig 11. Typical COSS Stored Energy


4

DC

1
0.0

Energy (J)

100sec

www.irf.com 2014 International Rectifier

25

50

75

100

125

150

175

Starting T J , Junction Temperature (C)

Fig 12. Maximum Avalanche Energy vs. DrainCurrent


Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF

Thermal Response ( Z thJC ) C/W

D = 0.50
0.1

0.20
0.10
0.05

0.02
0.01

0.01

R1
R1
J
1

R2
R2

R3
R3

Ci= i/Ri
Ci i/Ri

1E-005

i (sec)

0.02070

0.000010

0.08624

0.000070

0.24491

0.001406

0.15005

0.009080

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )

0.001
1E-006

Ri (C/W)

R4
R4

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Avalanche Current (A)

Duty Cycle = Single Pulse

Allowed avalanche Current vs avalanche


pulsewidth, tav, assuming Tj = 150C and
Tstart =25C (Single Pulse)

0.01

100
0.05
0.10
10

Allowed avalanche Current vs avalanche


pulsewidth, tav, assuming j = 25C and
Tstart = 150C.
1
1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF

EAR , Avalanche Energy (mJ)

250

Notes on Repetitive Avalanche Curves , Figures 14, 15:


(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav ) = Transient thermal resistance, see Figures 13)

TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 160A

200

150

100

50

0
25

50

75

100

125

150

PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC


Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav

175

Starting T J , Junction Temperature (C)

Fig 15. Maximum Avalanche Energy vs. Temperature

VGS(th) , Gate threshold Voltage (V)

4.5
4.0
3.5
3.0
2.5

ID = 250A
ID = 1.0mA
ID = 1.0A

2.0
1.5
1.0
-75 -50 -25 0

25 50 75 100 125 150 175 200

T J , Temperature ( C )

Fig 16. Threshold Voltage Vs. Temperature

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF
Driver Gate Drive

D.U.T

D.U.T. ISD Waveform


Reverse
Recovery
Current

RG

dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test

VDD

P.W.
Period
VGS=10V

Circuit Layout Considerations


Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

D=

Period

P.W.

+
-

Body Diode Forward


Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor
Current
Inductor Curent
ISD

Ripple 5%

* VGS = 5V for Logic Level Devices


Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
V(BR)DSS
tp

15V

DRIVER

VDS

D.U.T

RG

+
V
- DD

IAS
20V

0.01

tp

I AS

Fig 22a. Unclamped Inductive Test Circuit


LD

Fig 22b. Unclamped Inductive Waveforms

VDS

VDS

90%

+
VDD D.U.T

10%

VGS

VGS

Second Pulse Width < 1s


Duty Factor < 0.1%

td(on)

Fig 23a. Switching Time Test Circuit

td(off)

tr

tf

Fig 23b. Switching Time Waveforms


Id
Vds
Vgs

L
DUT

1K
20K

VCC
Vgs(th)

Qgodr

Fig 24a. Gate Charge Test Circuit


7

www.irf.com 2014 International Rectifier

Qgd

Qgs2 Qgs1

Fig 24b. Gate Charge Waveform


Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF

D2Pak - 7 Pin Package Outline


Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF
D2Pak - 7 Pin Part Marking Information

PART NUMBER
INTERNATIONAL
RECTIFIER LOGO

F1324S-7P
YWWP
17

ASSEMBLY
LOT CODE

89

DATE CODE
Y = YEAR
W = WEEK
P = LEADFREE

D2Pak - 7 Pin Tape and Reel

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

April 08, 2014

IRF1324S-7PPbF

Qualification information

Industrial
Qualification level

(per JEDEC JESD47F

guidelines)
MS L1

Moisture Sensitivity Level

D Pak-7PIN

RoHS compliant

(per JEDE C J-S T D-020D )


Yes

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/


Applicable version of JEDEC standard at the time of product release.

Revision History
Date

4/8/2014

Comments

Added Odering information table on page 1


Updated package outline on page 8
Updated part marking on page 9
Added Qualification table on page 10.
Updated data sheet with new IR corporate template

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA


To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10

www.irf.com 2014 International Rectifier

Submit Datasheet Feedback

April 08, 2014

You might also like