HALL EFFECT EXPERIMENT

Atirah Rahman, Ikhsan Mandala Putra, Marcetrisna Metoli, Nur Fadhilah Syarif
Modern Physics Laboratory Physics Department Mathematics and Science Faculty
State University of Makassar
Abstract. Have been done experiment about "Hall Effect Experiment. Aim of this experiment are
determine the relationship between Hall Current (IH) and Hall Voltage (UH), measuring sensitivity
Hall element (KH) of GaAs semiconductor material and determine the magnetization curve silicon
steel materials with Hall elements. There are three activities performed in this experiment. First
activity, magnetization current (IM) is controlled to see the response value of UH due to changes
in the value of IH. Second activity, IH controlled to see the response value of the magnetic field (B)
due to changes in the electromagnetic IM at each increment of 50 mA. And third activity,
performed the same procedure as in the second activity, but with changes in IM at each increment
of 100 mA. Based on data from the experimental results, the first activity obtained linear
relationship between IH and UH were clearly visible on the graph plots the results of U H and IH.
From the graph can also set the value of KH. Second activity, the value of sensitivity Hall element
is determined by using the value of UH, IH, and B. The results obtained showed that KH is
inversely proportional to B. Third activity, Silicon magnetization curves determined by plotting I M
and B, with the determination of the value of B first. From the graph obtained a linear
relationship between the magnetic currents and magnetic fields.

KEYWORDS: Hall current, Hall voltage, magnetization current, sensitivity Hall element
INTRODUCTION
Edwin Hall (1855-1938), was a
physicist who first discovered the
phenomenon melintag formation of an
electric field in a solid material when the
material is carrying an electric current
and is located in a field that is
perpendicular to the flow. This
phenomenon became known as the Hall
effect [1].
Before the experiment Hall itself
to reason that if the flow is affected by
the magnetic field then there should be
"a situation electric pressure flow
towards one side of the wire conductor".
After conducting the experiment many
times and repeated failures, Hall finally
discovered that a magnetic field will
change the direction of the line
equipotential conductor deliver a stream.
This effect is observed as a voltage
(called the Hall voltage), which is
directed perpendicular to the current in
the conductor [1].
Hall effect long enough teasing
curiosity physicists. Until before the last

half of the twentieth century, the

investigation of the Hall effect is
difficult because the Hall voltage can be
generated at the time the value is very
small.
But
with
advances
in
semiconductor technology and the
development of various types of
semiconductor alloy material, ultimately
Hall voltage can be generated with the
value of the order of magnitude that is
much larger than the Hall voltage
generated in the previous materials [1].
This experiment is an experiment
that tried to repeat what has been done
by Edwin Hall. This experiment is
important to be done in order to
determine the relationship between
current and voltage VH Hall IH,
measuring sensitivity Hall element KH
of GaAs semiconductor material, and
determine the magnetization curve
silicon steel material with a Hall
element. To that end, experiments were
done with three activities. The first
activity, magnetic current is controlled
to see the response value of the Hall
voltage due to current dimanipulasinya

Hall, second activity, Hall current is

controlled to see the response value of
the magnetic field due to manipulate
electromagnetic magnetization current,
and third activities carried out together
with a second activity, but by
manipulating the magnetization current
electromagnetic.

THEORY
If an electric current passes
through a conductor in the direction
perpendicular to the external magnetic
field, there will be the potential
difference in the direction perpendicular
to the electric current and the magnetic
field. This phenomenon is known as the
Hall effect, discovered in 1879 by
American physicist Hall. Hall effect in
metals is generally small but the
semiconductor material such as N-type
germanium, InSb, and GaAs Hall effect
is quite large. GaAs elements commonly
used in the measurement of the magnetic
field due to the high sensitivity, wide
linear range, and low temperature
coefficient [1].
Figure 1 shows the electric
current (IH) past the Hall element of
type-P, charge carrier drift currents hole
of v, the magnetic field B causes the
Lorentz force F on a moving charge:

F q v B

.....(1)

In this case the electron charge q

states. Lorentz force will deflect the
charge carrier to arahhorizontal and
gathered at the edge of the sample and
generates an electric field E. The
collection continued until the electric
field (Fe = qE) and magnetic field (FB)
were deployed by the carrier cancel each
other out, in this case:

q v B qE

......(2)

For samples with a type-p carrier

concentration of p, width w and
thickness d, the current through the
sample is IH (IH=pqd) so that the
charge carrier velocity hole become
=IH/pqd. So that, from equation (2) is
obtained,

E vB

IH B
pq d

......(3)

If both sides of the press. (3)

multiplied by then obtained,
U H E I H B / pqd RH I H B / d .....(4)

with RH=1/pq and called the Hall

coefficient. In summary, the equation (4)
is generally written as:

U H I H KH B

FIGURE 1. Diagram of the formation

of the Hall voltage

...... (5)

In this case the coefficients

KH=RH/d=1/pqd and called the Hall
element sensitivity, expressed in units
mV/(mAT). In general, the bigger the
better KH. Therefore KH inversely
proportional to the concentration of the
charge carrier concentration p and is
smaller than in the metal, the
semiconductor material is better used as
a Hall element. Of the equation (5) it

appears that by knowing KH, IH and UH

value can be measured. [1]
As with NMR, Hall effect can be
used to measure AC and DC magnetic
field with a quick and simple. Figure 2
shows the DC source that produces
magnetic current IM can be set through
the barriers R1 magnitude. E2 source to
generate current Hall IH Hall element
through barriers R2. E2 source can be
either DC or AC. A voltmeter is used to
measure the Hall current IH and Hall
voltage UH. [1]

FIGURE 2. The circuit for measuring

the potential difference Hall
Semiconductors are generally
composed of type-n and type-p with
different charge carrier signs. Therefore,
if the type of material is known, the
magnetic field direction can be
determined by looking at the sign UH.
Therefore, the time used to generate an
electric field through the Hall effect is
very short (10-12 10-14 s), then the
current AC or DC can be used. If the
current Hall expressed as IH=I0sin(t), it
is obtained,

U H I H K H B I 0 K H B sin t ....(6)
Potential Hall is back and forth. In
the case of AC, the equation (6) still
valid but the value of IH and UH is an
effective value. [1]

EXPERIMENT METHOD
Tools and materials used in
experiments Hall Effect, namely: A set
of tools Hall Effect Lambda Scientific
production. The working principle of the
experiment is that when an electric
current is passed through a plate
konduktro
then
muata
negative
(electrons) in the plate will move in the
opposite direction to the direction of
electric current supplied earlier, while
the positive charge and positive charge
carrier / hole (if the plate is a
semiconductor material) will move
parallel to the current given earlier.
When a magnetic field whose direction
is given to the plate perpendicular to the
plate current / current Hall, the direction
of movement will change the charge on
the plate and deflected to the side of the
plate due to the Lorentz force acting on
the charge. The positive charge would
gather at one side of the plate and on the
other hand also will gather negative
charge, these events will lead to the
emergence of tension due to the
potential difference between the side
plate occupied by positive and negative
charges.
This experiment is done by first
checking whether the equipment
components Hall effect is connected
properly to a voltage source PLN. Then,
make measurements in accordance with
the objectives to be achieved
experimentally.
In the first activity was measured
to determine the relationship between
the current Hall (IH) and the Hall voltage
(UH). First, the Hall effect device is
connected to a voltage source of
electricity then confirm the appointment
of any measuring instrument indicates
zero. Setting the tool is done by
positioning the tool in normal
circumstances here in after set
electromagnet magnetization current
(IM) of 400 mA. Then the Hall current
(IH) which is passed to the Hall element

is set ranging from 0.5 mA to 2.5 mA

(current Hall is not allowed to cross the
line 5,0 mA to avoid damage to the
unit). Observations made by noting the
value of the Hall voltage (UH) which is
derived for each value arusHall (IH).
In the second activity was
measured sensitivity of the KH of GaAs
elements, the adjustment tool is done by
first restoring the position of the tool
back to normal by restoring Hall current
and magnetization current position to
zero. further regulate current Hall (IH)
who is used by 1.0 mA. Furthermore,
the magnetization currents manipulated
starts at 0 mA - 400 mA with an increase
of 50 mA. Observations made by noting
the value of the magnetic field strength
(B) and the value of the Hall voltage
(UH) that produced for each value of the
magnetic current (IM).
In the third activity was measured
magnetization curve determination
silicon steel material with elem Hall.
measurement is started by setting the
Hall current (IH) who is used by 1.0 mA.
Flow further manipulated magnetization
starts at 0 mA - 400 mA with an increase
of 100 mA. Observations made by
noting the value of the Hall voltage (UH)
that produced for each value of the
magnetic current (IM). The last is by
plotting a graph of B and IM. The value
of the magnetic field B is not measured
by using teslameter but calculated by
using data on the measurement of
activity three and two (KH).

EXPERIMENT RESULT AND

DATA ANALYSIS
Experiment Result
Activity 1. Determine relation between
Hall Current (IH) with
Voltage (UH)
IM = 400 mA =400 x 10-3 A

TABLE 1. Relation between Hall Current

(IH) with Hall Voltage (UH)
Nu.
1.
2
3.
4
5.`

IH (x10-3 A)
0.5
1.0
1.5
2.0
2.5

UH (x10-3 V)
3.6
5.7
7.7
9.8
11.9

B(x10-3 T)
296.0
296.2
296.3
296.4
296.5

Activity 2. Measure Sensitivity KH from

GaAs Hall Element
IH = 1.0 mA =1.0 x 10-3 A
TABLE 2. Relation between Magnetic
current (IM), Hall Current (IH), and Hall
Voltage (UH)
Nu.
1.
2
3.
4
5.`
6.
7.
8.

IM (x10-3 A)
50
100
150
200
250
300
350
400

B (x10-3 T)
35.9
71.2
107.4
143.3
181.2
219.2
257.8
295.8

UH(x10-3 V)
46.0
24.0
16.3
12.5
9.7
7.9
6.6
5.7

Activity 3. Determine Magnetization

Curve of Silicon Steel with
Hall Element
IH = 1.0 mA =1.0 x 10-3 A
TABLE 3. Relation between Magnetic
field (B), Hall Current (IH),
and Hall Voltage (UH)
Nu.
1.
2
3.
4
5.`

IH (x10-3 A)
0
100
150
200
250

UH (x10-3 V)
0
23.7
12.0
7.8
5.7

B(x10-3 T)
0
72.6
196.3
221.8
296.2

Data Analysis
Acivity 1. Determine relation between IH
with UH
Using by the equation :

RH =
where:
UH
IH
B
d
RH

UH
IH B

: Hall Voltage (V)

: Hall Current(A)
: Magnetic Field (T)
: Thick material (m)
: Hall coefficient ( m/T)

Activity 2. Measure sensitivity KH from

GaAs Hall Element

Analysis Calculation
Activity 1. Determine relation between
Hall Current (IH) with
Voltage (UH)
Known;
UH average
= 7.7 x 10-3 V
IH average
= 1.5 x 10-3 A
B average
= 296.3 x 10-3 T
d
= 0,02 x 10-6 m
So that,

Measure sensitivity KH:

Using equation:
KH =

UH
IH B

where:
UH : Hall Voltage (V)
IH : Hall Current(A)
B : Magnetic Field (T)
KH : sensitivity Hall element V/(A.T)
Calculate the charge carrier density p
Using equation:
1
=

where:
q = electron charge (1.6 x 10-19 C)
d = thick semiconductor materials (m)
0,02 x 10-6 m

7.5 103 0,02 106

1.5 103 296.3 103

0.15109 .
444.45 106

= 3,375 107

Activity 2. Measure sensitivity KH from

GaAs Hall Element
Measure sensitivity KH:
For IM = 50 mA = 50 103 A
KH =
=

Activity 3. Determine the magnetization

curves of Silicon Steel
Element Hall
Calculate the mgnetic field (B)
Using equation:
B=

UH
IH K H

where:
UH : Hall Voltage (V)
IH : Hall Current(A)
B : Magnetic Field (T)
KH : sensitivity Hall element V/(A.T)

46.0 103
1.0 103 35.9 103

46.0 103
35.9 106 .

= 1,281.33

TABLE 4. Value of sensitivity (KH)

for each value of the
magnetization current (IM)
Nu.

IM ( A)

KH (V/a T)

1
2
3
4
5

50
100
150
200
250

1,281.33
337.08
151.77
87.23
53.53

6
7
8

300
350
400

36.04
25.60
19.27

Calculate the charge carrier density p

Known:
q = 1.6 x 10-19 C
d = 0.02 x 10-6 m
For Im = 50 mA= 50 x 10-3 A
1025
1,281.33

1.6 0.02

1025 .
=
41.00
= 0,02 1025

Acivity 1. Determine relation between IH

with UH

TABLE 5. Value of the charge carrier

density p (P) for each value
of the magnetization current
(IM)
P x 1025
IM
NO.

( A)
(A T / V C m)
1
2
3
4
5
6
7
8

50
100
150
200
250
300
350
400

0.02
0.09
0.20
0.36
0.58
0.87
1.22
1.62

Activity 3. Determine the magnetization

curves of Silicon Steel
Element Hall
Calculate magnetic field (B)
For Im = 100 mA = 100 103 A
23.70 103 V
1.0 103 A 337.08 V/A T
B = 0,07 T

Graph analysis

Hall Voltage (UH) (mA)

B=

TABLE 6. Value of the magnetic field

(B) for each value of the
magnetization current (IM)
IM ( A)
NO.
B (T)
1
0
0.00
2
100
0.07
3
200
0.14
4
300
0.22
5
400
0.30

12

y = 4.14x + 1.53
R = 0.9999

10
8
6
4
2
0
0

0.5
1
1.5
2
2.5
Hall Current (IH) (mA)

Figure 3. Graph the relationship

between the current Hall
(IH) and the Hall voltage
(UH)
Determine Hall coefficient (R H )
UH t
RH =
I B
R B
UH = ( Ht ) I y = mx
From the equation = 4,14 + 1,53
obtained:
RHB
= 4,14
d
UH d
RH =
I B
R B
( Ht ) I d
=
I
B

0.02 106 m
296.3 103 T
m
= 2.79 107
T
= 2 100 %
= 0.999 100 % = 99.9 %
= 100 % 99.9 % = 0.1%
= (4.14 )

100%
2.79 107 0.1%
=
100%

= 0.002 107

|2.790
=
0.002| 107

B (mT)

Activity 3. Determine the magnetization

curves of Silicon Steel
Element Hall
35000
30000
25000
20000
15000
10000
5000
0
-5000 0

y = 75x - 400
R = 0.9988

100 200 300 400 500

Im (mA)

Figure 4. Graph the relationship between

magnetization current (IM) and
magnetic field (B)
Discussion
Hall effect experiments showed
that when an electric current through a
plate in the direction perpendicular to
the external magnetic field, there will be
the potential difference in the direction
perpendicular to the current litrikwhen
an electric current is passed through a
plate konduktro then muata negative
(electrons) in the plate will move in the
opposite direction to the direction of
electric current supplied earlier, while
the positive charge and positive charge
carrier / hole (if the plate is a

semiconductor material) will move

parallel to the current given earlier.
When a magnetic field whose direction
is given to the plate perpendicular to the
plate current / current Hall, the direction
of movement will change the charge on
the plate and deflected to the side of the
plate due to the Lorentz force acting on
the charge. The positive charge would
gather at one side of the plate and on the
other hand also will gather negative
charge, these events will lead to the
emergence of tension due to the
potential difference between the side
plate occupied by positive and negative
charges.
For first activity, based on the
experimental results obtained the linear
relationship between the Hall voltage
(UH) and Hall current (IH). it is obtained
based on the graph plots of the Hall
current and Hall voltage. This indicates
that the larger the current through the
Hall element, the greater the Hall
voltage. Hall voltage arising bearers of
accumulated charge on the plate and
give rise to a potential difference
between the two plates. The greater the
current, the more charge is deflected to
the sides of the plate, so that the
potential difference between the two
plates are also getting bigger. This
suggests that the greater the current
through the Hall element, the greater the
Hall voltage. From the graph plots of
Hall currents and Hall voltages obtained
the value of Hall coefficient is |2.790

0.002| 107
For the second activity was done
by manipulating the magnetic currents
so that the magnetic field arising will
also change. From the data stream Hall
and Hall voltage obtained is determined
the value of the sensitivity of Hall
elements at each value of the magnetic
current (IM). From the experimental
results signify that the sensitivity is
influenced by the magnetic field of the
material, where the greater the flow of a
given magnetic (magnetic field), the

Hall element sensitivity value will be

smaller. Hall showed that the value of
the Hall element sensitivity is inversely
proportional to the magnitude of the
magnetic field.
For the third activity, also be
measured by manipulating the value of
the magnetic current IM but with an
increase of 100 mA. Based on the data
obtained and by using sensitivity values
that have been obtained in the second
kegitn determined magnetic field values.
The comparison of the values obtained
by teslameter with magnetic field values
based on calculations there is no
significant difference. While, for Silicon
magnetization curves determined by plotting
IM and B, with the determination of the
value of B first. From the graph obtained a
linear relationship between the magnetic
currents and magnetic fields.

CONCLUSION
Based on the experimental results
it can be concluded that there is a linear
relationship between the Hall current
with the Hall voltage. From the plots of
the Hall voltage and Hall current
obtainable Hall coefficient. While, for
the value of sensitivity Hall element is

proportional to the magnetic field and

inversely
proportional
to
the
concentration of charge carriers.
magnetic field is proportional to the
magnetization current and sensitivity
value Hall element.
REFERENCES
[1]Subaer, dkk. 2014. Penuntun
Praktikum Eksperimen Fisika I Unit
Laboratorium Fisika Modern Jurusan
Fisika FMIPA UNM.