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I. INTRODUCTION
The solution to the spectral versus power efficiency tradeoff
in multilevel or multicarrier wireless transmission is one of
todays major concerns for the RF/microwave communities.
Different linearization techniques, as predistortion or
feedforward, have been developed along the last decades for
traditional Cartesian (IQ) transmitters. More recently, special
efforts are being directed to alternative topologies and, in
particular, to polar architectures, where a theoretical 100%
efficient operation would be possible thanks to the application
of old high level AM strategies.
Device-level actions for linearity and efficiency
optimization have become fundamental in modern PA
conception, either in Cartesian or polar transmitters. Searching
for linearity figures typical of small-signal operation at higher
power levels and, consequently, improved associated
efficiency values, class AB PA designers have been using selflinearization techniques, such as large-signal IMD sweet-spots
[1]. On the other hand, actions at the transistor level may help
understanding and controlling the nonlinearities that appear in
drain modulated class E or F PAs [2].
Copyright 2010 IEEE. Reprinted from 2010 IEEE MTT-S International Microwave Symposium, Anaheim, CA, USA, pp. 1680-1683.
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3
Qgs (Vgs ) = QGS (VGS ) + C gs1 v gs + C gs 2 v gs2 + C gs 3 v gs
+ ...
3
gs
(1a)
(1b)
(1c)
a)
1681
b)
Fig. 1. Test set-up for a) output and b) input harmonic content
measurements under isodynamic conditions.
nd
Fig. 2.
2 I (2 ) Den2
Re ds 2
1 + Gm1 Rs
Vgen
+
=
Den1
Gm2
2 I (2 ) Den2
Re gs 2
Gm1 (Rgen + Rg + Rs )
Vgen
Den1
(2a)
IMS 2010
Ggs2
2 I (2 ) Den2
Re gs 2
1 + Gg1 (Rgen + Rg + Rs )
Vgen
=
+ (2b)
Den1
1000
2 I (2 ) Den2
Re ds 2
Ggs1 Rs
Vgen
Den1
C gs2 =
1 2 I gs (2 ) Den2
Im
+
2
2
V gen
(2c)
-500
-1000
-1500
-2000
-1
Vgs [V]
-1
Vgs [V]
a)
50
(3a)
2
3
PM (Vdd ) = PM 0 (VDD ) + p1 vdd + p2 vdd
+ p3 vdd
+ ...
(3b)
-50
-100
-150
-3
-2
b)
40
35
Cgs2 [pF/V]
30
Cgs3 [pF/V ]
25
20
15
10
0
-5
Ggs3 [mS/V ]
-10
-3
Fig. 3. Extracted
derivatives.
-2
GaN HEMT
second
and
third
c)
order
-1
Vgs [V]
Ggs2 [mS/V]
-2
100
gs1
-3
(2d)
2
Den2 = 1 + (G gs1 + jC gs1 )(Rgen + Rg + Rs ) + Gm1 Rs (2e)
[1 + (C
Gm3 [mS/V ]
500
2 I (2 )
Rs
Im ds 2
V gen (R gen + R g + Rs )
with
Den1 = 1 + Gm1 Rs + Ggs1 (Rgen + Rg + RS )
Gm2 [mS/V]
1682
IMS 2010
1.5
1
m1
m2
m3
0.5
0
1.5
-0.5
0
-1
-1
0
-1.5
0
10
15
VDD [V]
20
25
30
a)
80
p1
p2
p3
1683
Fig. 4.
60
40
20
0
-20
80
-40
40
0
-60
-40
-80
-80
-100
-120
-120
0
10
15
V D D [V]
20
25
30
b)
REFERENCES
[1] N. Carvalho and J. Pedro, Large and Small Signal IMD
Behavior of Microwave Power Amplifiers, IEEE Trans.
Microwave Theory and Tech., vol. MTT-47, pp. 2364-2374,
Dec. 1999.
[2] J. C. Pedro, J. A. Garca and P. M. Cabral, Nonlinear
Distortion Analysis of Polar Transmitters, IEEE Trans.
Microwave Theory and Tech., vol. 55, no. 12, part 2, pp. 27572765, Dec. 2007.
[3] P. M. Cabral, J. C. Pedro and N. B. Carvalho, Nonlinear
Device Model of Microwave Power GaN HEMTs for HighPower Amplifier Design", IEEE Trans. Microwave Theory and
Tech., vol. 52, no. 11, pp. 2585-2592, Nov. 2004.
[4] P. Aflaki, R. Negra and F. Ghannouchi,.Dedicated LargeSignal GaN HEMT Model for Switching-Mode Circuit Analysis
and Design, IEEE Microwave and Wireless Components
Letters, vol. 19, no. 11, pp. 740-742, Nov. 2009.
[5] J. C. Pedro, and J. Perez, "Accurate Simulation of GaAs
MESFET's Intermodulation Distortion Using a New DrainSource Current Model," IEEE Trans. Microwave Theory Tech.,
vol. 42, no.1, pp. 25-33, Jan. 1994.
[6] J. A. Garca, A. Mediavilla, J. C. Pedro, N. B. Carvalho, A.
Tazn, and J. L. Garca, "Characterizing the Gate-to-Source
Nonlinear Capacitor Role on GaAs Fet IMD Performance", in
IEEE Trans. Microwave Theory and Tech., vol. 46, no. 12, pp.
2344-2355, Dec. 1998.
[7] J. A. Garca, B. Bedia, R. Merln, P. M. Cabral and J. C. Pedro,
Characterizing the Vdd-to-AM and Vdd-to-PM Nonlinearities
in a GaN HEMT Class E Power Amplifier", Proc. International
Symp. on Microwave and Optical Technology - ISMOT, Rome,
Italy, pp. 375 - 378, December, 2007.
IMS 2010