Professional Documents
Culture Documents
100 A Surge-Current
Max IGT of 20 mA
TO-220 PACKAGE
(TOP VIEW)
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
TIC126D
TIC126M
TIC126S
VALUE
VDRM
600
700
TIC126N
800
TIC126D
400
TIC126M
TIC126S
UNIT
400
VRRM
600
700
800
TIC126N
IT(RMS)
12
IT(AV)
7.5
Surge on-state current at (or below) 25C case temperature (see Note 3)
ITM
100
IGM
A
W
Continuous on-state current at (or below) 70C case temperature (see Note 1)
Average on-state current (180 conduction angle) at (or below) 70C case temperature
(see Note 2)
PGM
PG(AV)
TC
-40 to +110
Tstg
-40 to +125
TL
230
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate
linearly to zero at 110C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
PRODUCT
INFORMATION
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
TEST CONDITIONS
Repetitive peak
MAX
UNIT
TC = 110C
mA
IG = 0
TC = 110C
mA
VAA = 12 V
RL = 100
tp(g) 20 s
20
mA
VAA = 12 V
RL = 100
TC = - 40C
VD = rated VDRM
off-state current
Repetitive peak
VR = rated VRRM
reverse current
Gate trigger current
MIN
TYP
2.5
tp(g) 20 s
VGT
VAA = 12 V
RL = 100
0.8
tp(g) 20 s
VAA = 12 V
RL = 100
TC = 110C
tp(g) 20 s
VAA = 12 V
IH
TC = - 40C
100
mA
VAA = 12 V
40
Initiating IT = 100 mA
VT
dv/dt
NOTE
On-state voltage
Critical rate of rise of
off-state voltage
0.2
Initiating IT = 100 mA
Holding current
1.5
IT = 12 A
(see Note 5)
VD = rated VD
IG = 0
1.4
TC = 110C
400
V
V/s
5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
MAX
UNIT
RJC
PARAMETER
2.4
C/W
RJA
62.5
C/W
PRODUCT
2
INFORMATION
MIN
TYP
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
THERMAL INFORMATION
MAX ANODE POWER LOSS
vs
ON-STATE CURRENT
16
14
Continuous DC
12
10
= 180
8
6
4
0
180
Conduction
Angle
0
30
40
50
60
70
80
90
100
110
TI03AF
100
TJ = 110C
10
01
01
TC - Case Temperature - C
100
Figure 2.
TI03AG
10
TC 70C
No Prior Device Conduction
Gate Control Guaranteed
1
10
100
Figure 3.
PRODUCT
TI03AH
10
R JC(t) - Transient Thermal Resistance - C/W
10
Figure 1.
100
0.1
10
100
Figure 4.
INFORMATION
3
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC03AA
TC03AB
RL = 100
tp(g) 20 s
VAA = 12 V
10
08
06
04
VAA =12 V
02
1
-50
-25
25
50
75
100
0
-50
125
RL = 100
tp(g) 20 s
-25
25
75
100
125
TC - Case Temperature - C
TC - Case Temperature - C
Figure 5.
Figure 6.
HOLDING CURRENT
vs
CASE TEMPERATURE
100
TC03AD
10
TC03AH
25
VAA = 12 V
Initiating IT = 100 mA
IH - Holding Current - mA
50
TC = 25 C
tp = 300 s
2
Duty Cycle 2 %
15
05
1
-50
-25
25
50
75
100
125
TC - Case Temperature - C
Figure 7.
PRODUCT
4
INFORMATION
0
01
10
Figure 8.
100
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
6,6
6,0
15,32
14,55
18,0 TYP.
6,1
5,6
1,47
1,07
0,97
0,66
1
14,1
12,7
3
2,74
2,34
5,28
4,68
0,64
0,41
2,90
2,40
PRODUCT
INFORMATION
5
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
PRODUCT
6
INFORMATION