You are on page 1of 6

TIC126 SERIES

SILICON CONTROLLED RECTIFIERS


Copyright 2000, Power Innovations Limited, UK

12 A Continuous On-State Current

100 A Surge-Current

Glass Passivated Wafer

400 V to 800 V Off-State Voltage

Max IGT of 20 mA

APRIL 1971 - REVISED JUNE 2000

TO-220 PACKAGE
(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.


MDC1ACA

absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING

SYMBOL
TIC126D

Repetitive peak off-state voltage

Repetitive peak reverse voltage

TIC126M
TIC126S

VALUE

VDRM

600
700

TIC126N

800

TIC126D

400

TIC126M
TIC126S

UNIT

400

VRRM

600
700

800

TIC126N
IT(RMS)

12

IT(AV)

7.5

Surge on-state current at (or below) 25C case temperature (see Note 3)

ITM

100

Peak positive gate current (pulse width 300 s)

IGM

A
W

Continuous on-state current at (or below) 70C case temperature (see Note 1)
Average on-state current (180 conduction angle) at (or below) 70C case temperature
(see Note 2)

Peak gate power dissipation (pulse width 300 s)

PGM

PG(AV)

Operating case temperature range

TC

-40 to +110

Storage temperature range

Tstg

-40 to +125

TL

230

Average gate power dissipation (see Note 4)

Lead temperature 1.6 mm from case for 10 seconds

NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70C derate linearly to zero at 110C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70C derate
linearly to zero at 110C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.

PRODUCT

INFORMATION

Information is current as of publication date. Products conform to specifications in accordance


with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

electrical characteristics at 25C case temperature (unless otherwise noted)


PARAMETER
IDRM
IRRM
IGT

TEST CONDITIONS

Repetitive peak

MAX

UNIT

TC = 110C

mA

IG = 0

TC = 110C

mA

VAA = 12 V

RL = 100

tp(g) 20 s

20

mA

VAA = 12 V

RL = 100

TC = - 40C

VD = rated VDRM

off-state current
Repetitive peak

VR = rated VRRM

reverse current
Gate trigger current

MIN

TYP

2.5

tp(g) 20 s
VGT

Gate trigger voltage

VAA = 12 V

RL = 100

0.8

tp(g) 20 s
VAA = 12 V

RL = 100

TC = 110C

tp(g) 20 s
VAA = 12 V
IH

TC = - 40C

100
mA

VAA = 12 V

40

Initiating IT = 100 mA
VT
dv/dt
NOTE

On-state voltage
Critical rate of rise of
off-state voltage

0.2

Initiating IT = 100 mA

Holding current

1.5

IT = 12 A

(see Note 5)

VD = rated VD

IG = 0

1.4
TC = 110C

400

V
V/s

5: This parameter must be measured using pulse techniques, tp = 300 s, duty cycle 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.

thermal characteristics
MAX

UNIT

RJC

Junction to case thermal resistance

PARAMETER

2.4

C/W

RJA

Junction to free air thermal resistance

62.5

C/W

PRODUCT
2

INFORMATION

MIN

TYP

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

THERMAL INFORMATION
MAX ANODE POWER LOSS
vs
ON-STATE CURRENT

AVERAGE ON-STATE CURRENT


DERATING CURVE
TI03AE

PA - Max Continuous Anode Power Dissipated - W

IT(AV) - Maximum Average On-State Current - A

16
14
Continuous DC
12
10
= 180

8
6
4
0

180

Conduction

Angle
0
30

40

50

60

70

80

90

100

110

TI03AF

100
TJ = 110C

10

01
01

TC - Case Temperature - C

100

IT - Continuous On-State Current - A

Figure 2.

SURGE ON-STATE CURRENT


vs
CYCLES OF CURRENT DURATION

TRANSIENT THERMAL RESISTANCE


vs
CYCLES OF CURRENT DURATION

TI03AG

10

TC 70C
No Prior Device Conduction
Gate Control Guaranteed
1

10

100

Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 3.

PRODUCT

TI03AH

10
R JC(t) - Transient Thermal Resistance - C/W

ITM - Peak Half-Sine-Wave Current - A

10

Figure 1.

100

0.1

10

100

Consecutive 50 Hz Half-Sine-Wave Cycles

Figure 4.

INFORMATION
3

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs

GATE TRIGGER CURRENT


vs
CASE TEMPERATURE

CASE TEMPERATURE

TC03AA

TC03AB

RL = 100
tp(g) 20 s

VGT - Gate Trigger Voltage - V

IGT - Gate Trigger Current - mA

VAA = 12 V

10

08

06

04
VAA =12 V
02

1
-50

-25

25

50

75

100

0
-50

125

RL = 100
tp(g) 20 s

-25

25

75

100

125

TC - Case Temperature - C

TC - Case Temperature - C

Figure 5.

Figure 6.

PEAK ON-STATE VOLTAGE


vs
PEAK ON-STATE CURRENT

HOLDING CURRENT
vs
CASE TEMPERATURE
100

TC03AD

10

TC03AH

25

VTM - Peak On-State Voltage - V

VAA = 12 V
Initiating IT = 100 mA
IH - Holding Current - mA

50

TC = 25 C
tp = 300 s
2

Duty Cycle 2 %

15

05

1
-50

-25

25

50

75

100

125

TC - Case Temperature - C

Figure 7.

PRODUCT
4

INFORMATION

0
01

10

ITM - Peak On-State Current - A

Figure 8.

100

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220

4,70
4,20

10,4
10,0

3,96
3,71

1,32
1,23

2,95
2,54
6,6
6,0
15,32
14,55

18,0 TYP.

6,1
5,6

1,47
1,07

0,97
0,66
1

14,1
12,7

3
2,74
2,34
5,28
4,68

0,64
0,41
2,90
2,40

ALL LINEAR DIMENSIONS IN MILLIMETERS


NOTE

A: The centre pin is in electrical contact with the mounting tab.

PRODUCT

INFORMATION
5

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000

IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 2000, Power Innovations Limited

PRODUCT
6

INFORMATION

You might also like