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temational Conference on Microwave and Millimeter Wave Technology Proceedings

S-BAND HIGH-POWER VOLTAGE CONTROLLED OSCILLATOR

Chen Lei

Sun Yi

Nanjing Electronic Device Institute of the Information industry Ministry

(

Nanjing210016

Abstract
This paper reports the theory, architecture, features and design of S-Band High-Power Voltage controlled Oscillator. The

components consists of Si-Bi-Polar Transistor,

common-Ease integrated oscillating circuits and tuning varactor. The

fringe experience results is given.

Key words: oscillator, low phase noise, high reliability

1.Introduction
In many national defense engineering aspect
such as radar, navigation, electronic confront,
microwave communication, space technology
and other application field, microwave solid
oscillator developing and applying is needed,
and the improving in this field impels the
developing and renovating of microwave solid
oscillator.
In this years, military microwave technology
developing fast, and much high requirement in
power, efficiency and reliability are bring
forward

to

the

important

components

microwave solid oscillator. The characteristic

of the development of the new generation of
microwave solid oscillator is high power, low
phase noise, high efficiency, high reliability
and long life span.
2.Design
.

One of the difficulties is the requirement of

low phase noise. Since the user will connect it

with phase-lock circuit, the oscillator is

required to have certain bandwidth, so we cant
adopt dielectric resonance frequency steady
oscillator, though the DRO has low phase noise,
but it usually works in spot frequency, even if
the varacator-tuned DRO is short of the
required
bandwidth
.If
high-Q-value
mental-resonance frequency steady oscillator is
selected
its volume is much large in
S-bandwidth, it cant fit the small voltage
needed by put-on-star components. So, we
select Si-Bi-Polar transistor oscillator.
In the microwave Si-Bi-Polar transistor
oscillator, the popular used circuit is
single-port oscillator constituted a length of
transmission line ended with varacator.
It can be regard as two port network when
microwave Bi-polar transistor in a certain
circuit configuration, it will constitute an
oscillator when linked properly. Since the
oscillating principle lies in the identity of
non-linearity negative impedance, so it is
usually called two port negative impedance

oscillator. The negative impedance of the two

controlled oscillator, following here:

port oscillator can be formed through positive

(1)Noise feature of oscillating device itself

feedback of capacitance among polar inside the

Generally the needed working band can select

device, or positive feedback of outside circuits,

the best noise feature device.

or feedback network combined inside and

(2)The having-load Q-Value of the oscillating

outside circuits. Only the proper feedback

loop

phase and amplitude can create stable

It will directly affect noise feature of

oscillating. So two port negative impedance

oscillating signal.

oscillator is also called feedback oscillator.

(3)Tuning component : varactor

Two port

Varactor is the tuning component composed

negative impedance oscillator

should:

oscillating loop; its feature decides Q-value of

I SI1 I >1
I s 2 2 I >1

the whole oscillating loop.

So, when we design the circuits, we should

Stabilize coefficient:

stressfully concede the above factors. Besides,

1 - I SII l 2- I S22 l 2+ I D l 2
k ='
<1
2 I SI2S21 I
In the formulation: D = SllS22 - S12S21

precondition satisfying the tuning bandwidth,

varactor and oscillating circuits, is an important

The design of oscillator, needs using and

method to improve the phase noise of the

transforming sufficiently of the circuits latency

voltage control oscillator.

un-stability,

According to the above analyzing, Si-Bi-polar

and

to

make

it

trying to weaken coupling between the,tuning

creates

self-oscillation.

transistor standing out regnantly in S-band.

The S-band high-power voltage controlled

Bi-polar

oscillator selects

High-power Si-Bi-Polar

frequency fc , using as microwave power

Transistor. The whole oscillating circuits using

oscillator device, it has the feature of low phase

mixed integrated circuits pattern, oscillating

noise, high feature frequency

transistor connected as common-Base, output

power and high efficiency.

in Collect, oscillating loop joining between E By

The high-power Si-Bi-polar transistor which

tuning through varactor.

we selected has the following properties:

Varactor adopting

weak coupling.
3.Main

working

transistor

has

low

turn-corner

high output

Output power: P329.2dBm

content

and

efficiency: rl3 15%

fringe

experimental result

This high-power Si-Bi-polar transistor is

The factors affecting the phase noise of voltage

developed by Nanjing electronic device

22 '

institute, it has been used a great lot in missile

4*S-band
diagram

loading microwave components.

oscillator

electric

schematic

R
+24V

detecting port

detecting diode

PO1

1
:1
1

CR3

FL5

atmosphere press, seal airtight technology had

been used.
Outside electric-magnetic field interaction may
cause microwave resonance-circuits harass,
and change equivalent L C. In circuits structure,
logical structure overall arrangement was
adopted, and oscillating antrum was shield to
of
outside
reduce
the
influence
electric-magnetic field.
The changing of Load impedance will reflect to
the oscillating circuits directly, not only
influence the resonance frequency of the
circuits, but also change the value Qo;they all

In order to reduce the influence of the

environment factors to the oscillators stability,
we designed elaborately to the oscillators
circuits fixing techniques, mechanism
installing
techniques
and
chemistry
encapsulation technology. To satisfy the high
requirement of the mechanics environment test.
All components of the DC circuit board of the
oscillator had been made chemistry
encapsulation, made the components and lead
wire circuits could endure quite strong
vibrating test.
To reduce the influence of humidity and

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change the oscillating frequency. Signal output

from the low impedance point of the oscillating
circuits could reduce the laden influence, but
the most effective method is adding an isolator
between the load and oscillator.
In the microwave oscillating circuits, to reduce
the influence of the outside environment the
binding between the components and
oscillating circuits, or the lead weir connecting
biasing circuit, should best to be short and have
adequate mechanic intention, the link and
installation of every lead wires should much
reliable.
Careful design and manufacturing results in
satisfying features:
+24V
Working voltage:
Working electric current: 0.21A
1OOMHz
Frequency range:
Tuning voltage:
0-9V
Main output power:
3 ldBm
Auxiliary output power:
16dBm
Harmonic wave suppress: <-30dB
Spurious wave suppress: <-60dB
Pol detecting voltage:
2.2v
Phase noise:
-9OdBdHdl OkHz
The module will be applied in engineering.

5.conclusion
S-band power voltage control oscillator
has taken the advanced microwave integrated
circuits installing techniques, the devices
selected has been strictly filtrated, it has high
reliability.
Reference
1 microwave solid state frequency source

theory

design application

Fei Yuanchun ect.

2 microwave components and circuits
Wang Yunyi ect.

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