Professional Documents
Culture Documents
Introduction
to Ceramics
Richard A. ,swalin
Second Edition
GLASS SCIENCE
Robert H. Doremlls
THE SUPERALLOYS
L. E. Alexallder
PHYSICAL PROPERTIES OF MOLECULAR CRYSTALS, LiQUIDS, ANO. GLASSES
A. Bondi
FRACTURE OF STRUCTURAL MATERIALS
J. H. Westbrook, editor
THE PHYSICAL PRINCIPLES OF MAGNETISM
AI/an H. Morrish
..
VV. D. Kingery
PHYSICS OF MAGNETISM
Soshin Chikazumi
PROFF.SSOR OF CERAMICS
Bruce Chalmers
H~'K.
A. H. Cottrell
Bowen
]. ]. Gilman, editor
SELECTEO V ALUES OF THERMOOYNAMIC PROPERTIES OF METALS ANO ALLOYS
D. R.. Ublmann
A. J. Kellllcdy
BC - UFSCar
Gare/h TllOmas
PLASTICITY ANO CREEP OF METALS
1111111111 '1111
Bruce Chalmers
ZONE MELTING, SECONO EDlTION
Wi/liam G. Pfann
M0019010
i--Tnterscience Publication
.Jo'
I
Preface to the
Second Edition
ft.9.
Tombo:
...\.5.':?J.~
__
__
oc
~-J
1
ons, ne.
~.~
.;
'.
DlIring the fifteen years which have passed since the first edition was
plIblished, the approach described has been widely accepted and practiced. However, the advances made in understanding and controlling and
developing new ceramic processes and products have required substantial
moc.lifications in the text and the introduction of a considerable amount of
new material.
Ir: particular, new and deeper understanding of the structure of
noncrystalline solids and the characteristics of structural imperfections,
new insight into the nature of surfaces ami interfaces, recognition of
~,pillodal decomposition as a viable aIternative to classical nucleation,
rccognition of the widespread occurrence of pha~e separation, development of glass-ceramics, c1earer understanding of :'Pme of the nuances of
sintering phenomena, development of scanning electron microscope and
Iransmission electron microscope techniques for the observation of
rnicrostructure, a better understanding of fracture and thermal stresses,
and a myriad. of developments relative to electrical, dielectric, and
magnctic ceramics have been included. The bre'adth and importance of
l)-cse advances has made a single author te;xt beyond any individual's
cornpetence.
The necessary expansion of material related to physical ceramics, and
[hc recent availability of excellent texts aimed at processing and manufacturing methods [F. N. Norton, Fine Ceramics, McGraw-Hill, New York
(1970); F. H. Norton, Refractories, McGraw-Hill, New York (1961); F. H.
Norton, Elements of Ceramics, second ed., Addison Wesley Publ. Co.
(1974); F. V. Tooley, ed., Handbook of Glass Manufacture, 2 Vols.,
h \)1. CG. (1':J61); A. ibvidson, ed., Handbook of Precsion
v
vi
Contents
INTRODUCTION
11
21
Structure of Crystals
25
Atomic Structure
25
Interatomic Bonds
36
n .Atomic Bonding in Solids 41
, ~'.4! Crystal Structures 46
2:1~, Grouping of long and Pauling's Rules
2.6 Oxide Structures
61
2.7 Silicate Structures
70
2.8 The Clay Minerals
77
2.9 ',Other St,ructures
80
2.10 Polymorphism
81
2.1
2.2
9]
Structure of Glass
56
95
,"'JU
CONTENTS
3.3
3.4
3.5
3.6
III
.~
I
!
4
4.1
Solld SolutIOns
131
Frenkel Disorder
139
Schottky Disorder
143
4.4
4.5
4.6
4.7
4:8
4.9
4.10
Structural Imperfections
4.2
4.3
Order~D!sorder Transformations
ASSOcIatlOn of Defects
148
Electronic Structure
152
Nonstoichiometric Solids
157
Dislocations
162
125
126
129
7
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
145
7.9
7.10
.4
'.'65
.7
8
.
6
,1
,2
4
5
6
7
Atom Mobility
177'
8.1
8.2
8.3
190
8.4
8.5
8.6
8.7
8.8
8.9
217
l:) \
232
234
269
276
381
9.1
9.2
265
~i
DEVELOPMENT OF MICROSTRUCTURE
IN CERAMICS
5.1
5.2
.3
ix
CONTENTS
385
10
10.1
10.2
10.3
10.4
10.5
10.6
10.7
13
448
14
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
11.10
11.11
11.12
Microstrueture of Ceramies
Characteristics of Microstructure
Quantitative Analysis
523
Triaxial Whiteware Compositions
Refractories
540
Structural Clay Products
549
Glazes and Enamels
549
Glasses
552
Glass-Ceramics
555
Electrical and Magnetic Ceramics
Abrasives
566
Cement and Concrete
569
Some Special Compositions
573
516
516
532
560
IV
PROPERTIES OF CERAl\lICS
581
12
Thermal Properties
583
15.1
15.2
15.3
15.4
15.5
15.6
15.7
15.8
70'
7M
791
17
17.1
17.2
Introduction
768
Elastic Moduli
773
Anelasticity
778
Brittle Fracture and Crack Propagation
783
Strength and Fracture Surface Work Experience
Static Fatigue
797
Creep Fracture
807
Effects of Microstructure
808
16
16.1
16.2
16.3
16.4
16.5
16.6
664
Introduction
704
Plastic Deformation of Rock Salt Structure Crystals
710
727 .
Plastic Deformation of Fluorite Structure Crystals
728
Plastic Deformation of Ah03 Crystals
Creep of Single-Crystal and Polycrystalline Ceramics
734
Creep of Refractories
747
Viscous Flow in Liquids and Glasses
755
15
Introduction
583
Reat Capacity
586
Dens"ity and Thermal Expansion of Crystals
589
Density and Thermal Expansion of Glasses
595
Thermal Expansion of Composite Bodies
603
Thermal Conduction Processes
612
Phonon Conductivity of Single-Phase Crystalline
Ceramics
615
12.8 Phonon Conductivity of Single-Phase Glasses
624
12.9 Photon Conductivity
627 .
12.10 Conductivity of Multiphase Ceramics
634
12.1
12.2
12.3
12.4
12.5
12.6
12.7
14.1
14.2
14.3
14.4
14.5
14.6
14.7
646
Optical Properties
646
13.1 Introduction
13.2 Refractive Index and Dispersion
658
13.3 Boundary Reflectance and Surface Gloss
13.4 Opacity and Translucency
666
677
13.5 Absorption and Color
689
13.6 Applications
11
xi
CONTENTS
CONTENTS
Electrical Conductivity
Electrical-Conduction Phenomena
847
Ionic Conduction in Crystals
852
81ti
822
84,
xii
17.3
17.4
17.5
17.6
17.7
17.8
17.9
CONTENTS
18
18.1
18.2
8.3
8.4
8.5
8.6
8.7
Introduction
to Ceramics
Dielectric Properties
913
914
Eleetrieal Phenomena
Dieleetrie Constants of Crystals and Glasses
931
Dieleetrie Loss Factor for Crystals and Glasses
937
Dieleetrie Conduetivity
945
PolyerystaIline and Polyphase Ceramies
947
960
Dieleetrie Strength
Ferroeleetrie Ceramies
964
19
Magnetic Properties
975
1017
part I
INTRODUCTION
CeramlC
Processes
and Products
rt and science of making and using sol~d
We define ceramlcs as the a .
t and are composed m
h
th ir essenttal componen,
articles whlch ave as enmetalhc matena 1s. This definition includes not
l
refractories, structural clay
large part of, morgamc no
only materials such as potte.r y , porcelam,
ents and glass but also
o elam ename s, cem
,
p
rc
.
1
f
l
ctrlOcs
products, . abraslves,
f matena s erroe e
, manufactured single crys.
.'
nonmetalhc magne ICand a vanety
o f o th e r products which were not m
tals, glass-ceramlcs,
d
y which do not exist today.
'1 f
years ago an man
.
h
t d science of making and usmgi
existence untl a ew
Our definition is broader than.t e a; ~1.:t on earthy raw materials, an
. solid articles formed by the actlOn o e
d is much broader than al
.
f h G ek word keramos, an
"
d i
cxtenslon o t e re o.
as" ottery" or "earthenware. Mo-[
common dictionary defimtlOn SUCh . PtO
the use of materials to close,.
thods of fa b nca Ion,
l'
.
cm developments dm th'
me new an d
'
properties
make tradltlOna,1
umque
speclficatlOns, an
elr
The origination of nove
definitions too restrictive for :u; p~r~~~e:iacture requires us to take a
and a broad view of the field.
ceramic material s and new met o s o .
fundamental approach to the art and sClence
o
1.1
The ceramic industry is one of the large ib~dll~stri.es 109f7t4he Umted States.
.
f
Iy $20 I IOn m .
i
with an annual produchon o near
dustry is that it is basic to.
t . fc of the ceramlc m
One important charac ens I
h ' d str'les For example, refracf
of many ot er m u .
.
the successful opera IOn
h
t 11 gical industry. Abraslves ar9
.
onent of t e me a ur
d t
bOl industries. Glass pro uc ~
taries are a baSlc comp
h'
tool and automo I e
l'
. . d t as well as to the archltectura 1
essential to the mac me.
th
utomobtle m us ry
. l .
.
U
.
oxide fuels are essentta tq
are essentlal to e a
.
l t' l industnes. ranlUm
d'
electromc, and e ec nca
ntl'al to the architectural an .
. d us t ry. Cements are esse
the nuclear-power In
,
o
'.
INTRODUCTION TO CERAMICS
Table 1.1. Ideal Chemical Formulas of the Clay Minerals
P~O;I th~
high-tonnag~
Kaolinite
Halloysite
Pyrophyllite
Montmorillonite
Mica
Illite
Alz(ShOo) (OH) 4
AheShO)(OH)4 2HzO
Ah(SizOMOH)z
Ah.'67N
M3o.33) (ShO)z(OHh
(
gO,33
AlzK(Sil,5Alo.O)z(OH)z
Ah_xMg,Kl_,_iSil,-uAlo.-t1JO)z(OH) 2
INTRODUCTION TO CERAMICS
CERAMIC PROCESSES AND PRODUCTS
toward the increasing use of mechanical, physical, and chemical purification and upgrading of raw materials together with special contr?1 of
particle size and particle-size distribution and away from the sole rehance
on materials in the form found in nature.
~ Forming and Firing. The most critical factors affecting forming and
firing processes are the raw materials and their preparati?n. v.:e ~av~ to be
concerned with both the particle size and the particle-slze dlstnbutlOn of
the raw materials. Typical c1ay materials have a particle-size distribution
which ranges from 0.1 to 50 microns for the individual particles. ~or the
preparation of porcelain compositions the flint and feldspar constItuents
have a substantially larger particle size ranging between lO and 200
microns. The 'fine-particle constituents, which for special ceramics ~ay
be less than 1 micron, are essential for the forming process, since col.IOIdal
suspensions, plastic mixes with a liquid-phase binder, and dry pr~s.sll1~ all
depend on very small particles flowing over one ,another or rem.aml~g m a
stable suspension. For suspensions, the settlll1g tende~cy IS ~Irectly
proportional to the density and particle size. Fo~ plastlc forml~g t.he
coherence of the mass and its yield point are determll1ed by th~ capIllanty
of the liquid between particles; this force is inversely. proportlOnal to .the
particle size. However, if all the material were of a umforml.y fine part~c1e
size it would not be feasible to form a high concentratlOn of sohds.
Mixing in a coarser material allows the fines to fill the inter~tices bet:vee.n
the coarse particles such that a maximum particle-packJ~g denslty IS
achieved at a ratio of about 70% coarse and 30% fine matenal wh~n two
particle sizes are used. In addition, during the drying process, shnnkage
results from the removal of water films between particles. Since the
number of films increases as the particle size decreases, bodies prepared
with a liquid binder and al! fine-particle materials have a high shrinkag~
during drying and the resultant problems of warpi.ng a~d dis.tor~ion:
In addition to a desired particle size and partIcle-slze dlstnbutl~n,
intimate mixing of material is necessary for unif?rmity of pro?ertIes
within a body and for the reaction of individual constit~ents dU~II1.g the
fi.ring process. For preparing slurries or a fine-grain. plastIc mass, It IS t~e
usual practice to use wet mixing, with the raw maten.als plac:d,together 111
ball milis or a blunger. Shearing stresses developed 111 the ':lIXll1 g ~ro~ess
improve the properties of a plastic mix and ens~re the umfor~ dlstn~u
tion of the fine-grain constituent. For dewatenng the wet-mIlle~ ml~,
either a filter press may be used, or more commonly spray-drYIl1~, m
which droplets of the slurry are dried with a cou~tercurrent of ~arm mr to
maintain their uniform composition during drymg. The resultll1g aggregates, normally 1 mm or so in size, flow and deform readily in subsequent
forming.
INTRODUCTlON TO CERAMICS
Since the firing process also depends on the capillary forces resulting
from surface ener.gy to consolidate and densify the material and since
these forces are mve~sely proportional to particle size, a substantial
percen~age of fine-p~rtIcI~ material is necessary for successful firing. The
clay ~I.nerals are umque m that their fine particle size provides both the
capablhty for pl~stic forming and also sufficientIy large capillary force s
for s~~ce~sful finng. ~t~er r.aw material s have to be prepared by chemical
preclpltatlOn or b~ mlllmg mto the micron particle range for equivalent
results to be obtamed.
Pe~haps the sim~lest method of compacting a ceramic shape consists of
formmg a.dry or shg~tly damp powder, usually with an organic binder, in
a ~etal dIe a~ sufficlently high pressures to form a dense strong piece
~:~s ::thOd.IS used e~tensively for refractories, tiles, sp~cial electricai
. gnetIc ceramlCS, spark-plug insulators and other technical
ceramlCS, nuc.lear-fuel pellets, and a variety of products for which large
numbers of sImple shapes are required. It is relatively inexpensive and
~~~~rm .shapes to close tolerances. Pressures in the range of 3000 to
, . pSI are commonly used, the higher pressures for the harder
~atenals such as pure oxides and carbides. Automatic dry pressing at
Igh ~at~s ~f s~eed has been developed to a high state of effectiveness
~~e .hmltatlOn IS that for a shape with a high length-to-diameter ratio th~
nctlOnal forc.es of the powder, particularly against the die wall, lead to
pres.sure g.radlents and a resulting variation of density within the piece
Du~mg fi.nng. thes~ density variations are eliminated by material flo~
dur.mg smtenng; It necessarily follows that there is a variation in
shnnkage. and a los s of theorigina1" tolerances. One modification of the
~~y-pressm~ method which leads to-a more uniform density is to enclose
.e sample m a rub?er mol~ inserted in a hydrostatic chamber to make
Ple~~s by hY.dr?stat~c moldmg, in which the pressure is more uniformly
:~fele~h~anatIons ~n sa.mple density and shrinkage are less objection.
.
s method IS wldely used for the manufacture of spark-plug
ms.ulato~s and foro special electrical components in which a high degree of
umfor~lty ~nd hlgh level of product quality are required.
th: q~te d~ffere.nt method of forming is to extrude a stiff plastic mix
oug .a dIe onfice, a method commonly used for brick sewer .
tIle, t.echnical ceramics, electrical insulators, and other
avmg a.n aXIs normal to a fixed cross section. The most widely practiced
~ethod IS t~ use a vacuum auger to eliminate air bubbles, thoroughly mix
t e ~ody :"'Ith 12 to 20% water, and force it through a hardened steel or
carblde dl~. Hydraulic piston extruders are also widely used.
The earhest method of forming clay ware, one still widely used is to
add enough water so that the ware can readily be formed at low pres~ures.
~oll~W
11
mat~li~~~
This may be done under hand pressure such as building ware with coils,
free-forming ware, or hand throwing on a potter's wheel. The process can
be mechanized by soft-plastic pressing between porous plaster molds and
also by automatic jiggering, which consists of placing a lump of soft
plastic clay on the surface of a plaster-of-paris mold and rotating it at
about 400 rpm while pulling a profile tool down on the surface to spread
the clay and form the uppe r surface.
When a larger amount of water is added, the clay remains sticky plastic
until a substantial amount has been added. Under a microscope it is seen
that individual clay particles are gathered in aggregates or f1ocs. However,
if a small quantity of sodium silicate is added to the system, there is a
remarkable change, with a substantial increase in f1uidity resulting from
the individual particles being separated or deflocculated. With proper
controls a fluid suspension can be formed with as little as 20% liquid, and
a small change in the liquid content markedly affects the f1uidity. When a
suspension such as this is cast into a porous plaster-of-paris mold, the
mold sucks liquid from the contact area, and a hard layer is built on the
surface. This process can be continued until the entire interior of the mold
is filled (solid casting) or the mold can be inverted and the excess liquid
poured out after a suitable wall thickness is built up (drain casting).
In each of the processes which require the addition of some water
content, the drying step in which the liquid is removed must be carefully
controlled for satisfactory results, more so for the methods using a higher
liquid content. During drying, the initial drying rate is independent of the
water content, since in this period there is a continuous film of water at
the surface. As the liquid evaporates, the particles become pressed more
closely together and shrinkage occur.s until they are in contact in a solid
structure free from water film. During the shrinkage period, stresses,
warping, and possibly cracks may develop because of local variations in
the liquid content; during this period rates must be carefully controIled.
Once the particles are in contact, drying can be continued at a more rapid
rate without difficulty. For the dry-pressing or hydrostatic molding
process, the difficulties associated with drying are avoided, an advantage
for these methods.
After drying, ceramic ware is normally fired to temperatures rangirig
from 700 to 1800C, depending on the composition and properties desired.
Ware which is to be glazed or decorated may be fired in different ways.
The most common procedure is to fire the ware without a glaze to a
sufficiently high temperature to mature thebody; then a glaze is applied
and fired at a low temperature. Another method is to fire the ware initially
to a low temperature, a bisque fire; then apply the glaze and mature the
body and glaze together at a higher temperature. A third method is to
12
INTRODUCTION TO CERAMICS
apply the glaze to the unfired ware and heat them together in a one-fire
process.
During the firing process, either a viscous liquid or suffici~nt atom!c
mobility in the solid is developed to permit chemical reactIons, gram
growth, and sintering; the last consists of allowing the force s of surface
tension to consolidate the ware and reduce the porosity. The volume
shrinkage which occurs is just equal to the porosity decrease and varies
from a few to 30 or 40 vol%, depending on the forming process and the
ultimate density of the fired ware. For sorne special applications, complete density and freedom from all porosity are required, but for other
applications sorne residual porosity is desirable. If shrinkage proceeds at
an uneven rate during firing or if part of the ware is restrained from
shrinking by friction with the material on which it is set, stresses, warping,
and cracking can develop. ConsequentIy, care is required in setting the
ware to avoid friction. The rate of temperature rise and the temperature
uniformity must be controlled to avoid variations in porosity. and s~ri~
kage. The nature of the processes taking place is discussed m detaIl m
Chapters 11 and 12.
.
.
Several different types of kilns are used for firing ware. The slmplest IS
a skove kiln in which a bench~ork of brick is set up inside. a surface
coating with combustion chambers under the material to. be fired.
Chamber kilns of either the up-draft or down-draft type are wldely used
for batch firing in which temperature control and uniformity need not be
too precise. In order to achieve uniform temperatures and maximum use
of fuel chamber kilns in which the air for combustion is preheated by the
coolin~ ware in an adjacent chamber, the method used in ancient China, is
employed. The general availability of more precise temperature ~ontr~ls
for gas, oil, and electric heating and the demands for ware umformlty
have led to the increased use of tunnel kilns in which a tempe(ature profile
is maintained constant and the ware is pushed through the kiln to provide
a precise firing schedule under conditions such that effective control can
be obtained.
Melting and Solidification. For most ceramic materials the high. ~ol
ume change occurring during solidification, the low thermal condw::tI.vlty,
and the brittle nature of the solid phase have made melting and sohdlfication processes comparable with metal casting and foundry p~a~tice
inappropriate. Recently, techniques have been developed for umdl.rectional solidification in which many of these difficulties can be substantIally
avoided. This process has mainly been applied to fOfl:ln g contro~led
structures of metal alloys which are particularly attractlve for apphcations such as turbine blades for high-temperature gas turbines. So far as
we are aware, there is no large scale manufacture of ceramics in this way,
13
but we anticipate that the development of techniques for the unidirectional solidification of ceramics wiII be an area of active research during
the next decade.
. Another case in which these limitations do not apply is that of
glass-forming materials in which the viscosity increases over a broad
temperature range so that there is no sharp volume discontinuity during
solidification and the forming processes can be adjusted to the fluidity of
the glass. Glass products are formed in a high-temperature viscous state
by five general methods: (1) blowing, (2) pressing, (3) drawing, (4) rolling,
and (5) casting. The ability to use these processes depends to a large
extent on the viscous flow characteristics of the glass and its dependence
on temperature. 'Often surface chilling permits the formation of a stable
shape while the interior remains sufficiently fluid to avoid the buildup of
dangerous stresses. Stresses generated during cooling are reIieved by
annealing at temperatures at which the force of gravity is insufficient to
cause deformation. This is usually done in an annealing oven or lehr
which, for many silicate glasses, operates at temperatures in the range of
400 to 500e.
The characteristics most impressive about commercial glass-forming
operations are the rapidity of forming and the wide extent of automation.
Indeed, this development is typical of the way in which technical progress
affects an industry. Before the advent of glass-forming machinery, a
majar part of the container industry was based on ceramic stoneware.
Large numbers of relatively small stoneware potters existed solely for the
manufacture of containers. The development of automatic glass-forming
machinery allowing the rapid and effective production of containers on a
continuous basis has eliminated stoneware containers from common use.
Special Processes. In addition to the broadly applicable and widely
used processes discussed thus far, there is a variety of special processes
which augment, modify, extnd, or replace these forming methods. These
inelude the application of glazes, enamels, and coatings, hot-pressing
materials with the combined application of pressure and temperature,
methods of joining metals to ceramics, glass crystallization, finishing and
machining operations, preparation of single crystals, and vapordeposition processes.
Much ceramic ware is coated with a glaze, and porcelain enamels are
commonly applied on a base of sheet steeI or cast iron as well as for
special jewelry applications. Glazes and enamels are normally prepared in
a wet process by milling together the ingredients and then applying the
coating by brushing, spraying, or dipping. For continuous operation,
spray coating is most frequentIy used, but for sorne applications more
satisfactory coverage can be obtained by dipping or painting. For
14
INTRODUCTION TO CERAMICS
15
16
1.3
INTRODUCTION TO CERAMICS
Ceramic Products
17
18
INTRODUCTION TO CERAMICS
either to replace natural crystals which are unavailable or for their own
unique properties. Ruby and garnet laser crystals and sapphire tubes and
substrates are grown from a melt; large quartz crystals are grown by a
hydrothermal process.
Ceramic nitrides with unusually good properties for special applications have been developed. These include aluminum nitride, a laboratory
refractory for melting aluminum; silicon nitrides and SiAION, commercially important new refractories and potential gas turbine components;
and boron nitride, which is useful as a refractory.
Enamels for aluminum have been developed and have become an
important part of the architecturalindustry.
Metal-ceramc '-composites have been developed 'and are now an
important part of the machine-tool industry and have important uses as
refractories. The most important members of this group are various
carbides bonded with metals and mixtures of a chromium alloy with
aluminum oxide.
, Ceramic carbides with unique properties have been developed. Silicon
carbide and boron carbide in particular are important as abrasive
materials.
Ceramic borides have been developed which have unique properties of
high-temperature strength and oxidation resistance.
Ferroelectric ceramics such as barium titan ate have been developed
which have extremely high dielectric constants and are particularly
important as electronic components.
Nonsilicate glasses have been developed and are particularly useful for
infrared transmission, special optical properties, and semiconducting
devices.
Molecular sieves which are similar to, but are more controlled than,
natural zeolite compositions are being made with controlled structures so
that the lattice spacing, which is quite large in these compounds, can be t'
used as a means of separating compounds of different molecular sizes. ~.
Glass-ceramics are a whole new family of materials based on fabricat- t
ing ceramics by forming as a glass and then nucleating and crystallizing to
r"
form a highly crystalline ceramic material. Since the original introduction~'
of Pyroceram by the Corning Glass Works the concept has been extended i
to dozens ofcompositions and applications.
~
Porefree polycrysta/line oxides have been made based on alu mina, ~
yttria, spinel, magnesia, ferrites, and other compositions.
Literally dozens of other new ceramic materials unknown lOor 20
years ago are now being manufactured and used. From this point of view
the ceramic industry is one of our most rapidly changing industries, with
new products having new and useful properties constantly being de-
i
t
19
veloped. These ceramics are being developed because there is a real need
for new materials to transform presently available designs into practical,
serviceable products. By far the major hindrance to the development of
many new technologically feasible structures and systems is the lack of
satisfactory materials. New ceramics are constantly filling this need.
New Uses for Ceramics. In the same way that the demand for new and
better properties has led to the development of new material s, the
availability of new material s had led to new uses based on their unique
properties. This cycle of new ceramics-new uses-new ceramics has
accelerated with the attainment of a better understanding of ceramics and
their properties.
One example of the development of new uses for ceramics has
occurred in the field of magnetic ceramic materials. These materials have
hysteresis loops which are typical for ferromagnetic materials. Sorne have
very nearly the square loop that is most desirable for electronic computer
memory circuits. This new use for ceramics has led to extensive studies
and development of material s and processes.
Another example'is the development of nuclear power, which requires
uranium-containing fuels having large fractions of uranium (or sometimes
thorium), stability against corrosion, and the ability to withstand the
fissioning of a large part of the uranium atoms without deterioration. For
many applications U0 2 is an outstanding material for this fuel. Urania
ceramics have become an important part of reactor technology.
In rocketry and missile development two critical parts which must
withstand extreme temperatures and have good erosion resistance are the
nose cone and the rocket throat. Ceramic materials are used for both.
For machining metals at high speeds it has long been known that oxide
ceramics are superior in many respects as cutting tools. However, their
relatively low and irregular strength makes their regular use impossible.
The development of alumina ceramics with high and uniform strength
levels has made them practicable for machining metals and has opened up
a new field for ceramics.
In 1946 it was discovered that barium titanate had a dielectric constant
100 times larger than that of other insulators. A whole new group of these
ferroelectric material s has since been discovered. They allow the manufacture of capacitors which are smaller in size but have a larger capacity
than other constructions, thus improving electronic circuitry and developing a new use for ceramic materials.
In jet aircraft and other applications metal parts have had to be formed
from expensive, and in wartime unobtainable, alloys to withstand the
moderately high temperatures encountered. When a protective ceramic
coating is applied, the temperature limit is increased, and either higher
20
INTRODUCTION TO CERAMICS
temperatures can be reached or less expensive and less critical alloys can
be substituted.
Many further applications of ceramics which did not even exist a few
years ago can be cited, and we may expect new uses to develop that we
cannot now anticipate.
Suggested Reading
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
part 11
CHARACTERISTICS
OF CERAMIC
SOLIDS
21
22
INTRODUCTlON TO CERAMICS
(I)
23
reaction:
/),,0
/),.
S ice lO wuler
I
1
I
,
i
/)"Hrusion
(3)
Te (273 0 K)
(2)
= O = /),.H - T. /),.S
+ V dP +
Li
dX;
(4)
where we define the chemical potential Li as the change in the free energy
of the system with respect to a change in the concentration of the ith
component at constant temperature and pressure:
Li =
JO)
(JX
(5)
--
T,P,X"
Structure
of Crystals
In this chapter we examine the structure of crystalline solids, solids
characterized by im orderly periodic array of atoms. The three states of
matter-gaseous, liquid, solid-can be represented as in Fig. 2.1. In the
gaseous state, atoms or molecules are widely ~~ITf(~?ftFand are in rapid
motion. The large average separation between atoms and nearly elastic
interactions allow the application of the well-known ideal gas laws as a
good approximation at low and moderate pressures. In contrast, the liquid
and solid states are characterized by the close association of atoms, which
to a first approximation can befggt~ai(fas spherical balls in contact with
springs between them representing interatomic forces. In liquids there is
sufficient thermal energy to keep the atoms in random motion, and there is
no long-ra,l1ge order. In crystals, the attractive forces of interatomic
bonding d~ercome the disaggregating thermal effects, and an ordered
arrangement of atoms occurs. (In glasses, considered in Chapter 3, a
disordered arrangement persists even at low temperatures.) This chapter
is concerned with the structure of the orderly periodic atomic arrangements in crystals. What we consider here are ideal crystal structures.
Later, in Chapters 4 and S, we consider sorne of the important departures
from ideality.
In order to understand the nature and formation of crystal structures, it
is essential to have sorne understanding of atomic strl!~ture. We present
sorne results of quantum theory relating to atomic structure in the first
section. Sorne additional aspects of quantum theory are brought in later as
needed (particularly in connection with electrical and magnetic properties). However, we strongly urge students who have not don'e so to learn
as much as possible about modern atomic physics as a basis for a better
understanding of ceramics.
2.1
Atomic Structure
The basis for our present understanding of the structure of the atom lies
in the development of quantum theory and wave mechanics. By about
25
STRUC1'URE OF CRYSTALS
00
o o
(a)
(b)
(e)
Fig. 2.1. Structures of (a) gas with widely separated molecules, (b) liquid with no
long-range order, and (e) crystal with atoms or molecules having an ordered pattern.
27
35
Fig.2.2.
Table 2.1.
Periodic Classificat'
Grallp 1
III
1I
lhe Elements
IV
VI
VII
II
He
10
Ne
~
~
- -Elenlenla
- - - - - i '~
, , - - - -- - - " '
Tronailion
~
ID
20
21
22
23
21
I(
Cn.
~c
Ti
Cr
25
1\.1 n .
26
27
Fe
Co
---;&\
Si
2D
30
Cl!
Zn
31
32
33
31
305
36
Gn
Ge
A,
Se
Br
Kr
50
51
52
53
In
Sn
Sb
Te
TTTTTffTT:T TTTT1111
37
38
39
.,10
41
42
.,13
41
4S:
Ub
Sr
Zr
Nb
!\ola
Te
Rn
',,'0,,,,';,''';''''"'''''''''',.
Rnre
55
.S6
57
58
50
fin.
J.n
Ce
ipr.O.,
51,6(j.,2 i')J)6id6.,2
.lpG.1 2
(lO
4/30,,2
N(l
4/ 40,,2
61
62
61
Pln
Sm
EII
./SO.,2
.lrO.,2
Enrth~
G'I
Gd
'I7Gs 2 '1/7Sd,,2
(jS
GG
07
08
00
Tb
Dy
!lo
Er
Tm
'I/ A;1d6 s :Z
'J' 00:"J2
4/ 11 fJ.'I 2
.1/ 12 G.,2
TTTTTTTTTTTT
87
88
8D
no
!H
!l2
03
D\
95
96
07
08
Fr
na
Ac
Th
Pn.
Np
JIu
Arn
Cm
Bk
cr
'1,27.'1
61,27.,2
Od7.,2
;,/57,,2
;r7.~2
5/7 7[12
11)
48
Pd
Cd
;.~.
n
'1/ 13 GII 2 4(
Lo
W"'!-Mt 1
Ilf
5d26.~2
Ta
5d J GII 2
75
76
77
78
70
80
81
82
83
84
805
86
Ro
Oa
Ir
Pt
AI1
II.
TI
Pb
Di
6,, 261,3
Po
At
Rn
611 26 p 4
6,,261'5
6.,26p
5d 46s 2
5d 56s 2
5d6G.~2
5d 9
t>d 9Gs
29
28
1.
051
Xc
5d IO G,
!id 1O O.,2
(t, 2Gp
G,,26 p 2
32
STRUCTURE OF CRYSTALS
INTRODUCTION TO CERAMICS
33
---'i---y
...j=--y
Fig. 2.5.
the case for hydrogen (se~ Table 2.2 for the ionization energies of the
elements). Since there are no vacant sites in the n = 1 shell, adding an
electron would put it in the 2s orbital far from a neutral core-not a stable
configuration. ConsequentIy, helium is one of the most inert elements.
Similar considerations apply to the other rare gases.
The group I elementsare characterized by an outer s 1 orbital such as
that illustrated in Fig. 2.6. In lithium (1 s >, 2s 1) the outer electron is at an
average radius of about 3 and can be easily removed from the inner
core of the nucleus and l s 2 electrons (ionization potential = 5.39 eV) to
form the Lt ion. The ease of ionization makes lithium highly reactive and
electropositive in chemical reactions. Removal of a second electron
requires a much higher energy so that lithium is always monovalent, as
are other group I elements.
In group 11 elements there is an outer s 2 shell from which two electrons
are lost with an approximately equal expenditure of energy. These
elements are electropositive and divalent. Similarly in the group III and
IV elements there are three and four outer electrons; these elements are
less electropositive with typical valencies of + 3 and + 4. The group V
elements are characterized by an outer configuration of s 2 plus three
Fig.2.6.
othel' outel' electrons (p3 or d3) and typically exhibit either a +3 ol' +5
valence. In sorne cases nitrogen and phosphorus gain additional electrons
to fill completely the p orbital to form negative ions.
The fol'mation of negative ions is chal'actel'istic of the group VII
elements, which contain five electl'ons in the outel' p orbital. The addition
of one electron forms a stable F- ion, for example. The binding energy fol'
this. additional electron in fiuorine is 4.2 eV, called the electroll affinity.
This binding energy arises because in the 2p orbital the additional
electron is not completely scl'eened fl'om the nucleus by othel' electrons,
JO
il'l i KUuUCTiUi'l i ()
C~KAJVHCS
STRUCTURE OF CRYSTALS
31
Electron Orbits. Although the Bohr model of the atom was successful
in quantitatively explaining many spectral data, the stabilization of certain
electro n orbits and the fine structure of spectral lines remained unexplained. De Broglie (1924) postulated that the dualism of observed Iight
phenomena, which can be discussed either as wave phenomena or from
the standpoint of the energy and momentum of photons, is quite general.
According to the Planck and de Broglie equations,
Energy:
E= hv
h
Momentum:
mv
=I
(2.1)
~(a2t/J+a2t/J+a2t/J)_
_~at/J
87T 2m ax 2 ay2 az 2 Pt/J - 27Ti at
(2.2)
I
~
,rf
Fig. 2.3. Stationary states in allowed electron orbits and destructive interference in
nonallowed orbit. From A. R. von Hippel, Dielectrics alld Waves, John Wiley & Sons, New
York,1954.
,
r
its absolute value It/J 12 represents the probability of finding the electron in
the enclosed volume element dv. For a number of relatively simple cases
the distribution of electrons in space has been demonstrated. In its
representation as a standing wave it must be viewed as smeared out over a
probability pattern.
The simplest atom is hydrogen, which has a nucteus composed of one
proton and, in the ground state, one l s electron. This electron has
spherical symmetry with a maximum probability distribution at a radial
distance of about 0.5 . (Fig. 2.4), which corresponds closely with the
radius of the first Bohr orbit. For higher atomic numbers, the l s electron
distribution is similar except that the higher nuclear charge Ze makes
them more tightly bound and closer to the nucleus. The 2s electrons also
have spherical symmetry but are higher energy states and are farther from
the central core of the positive nucleus and 1s electrons. In lithium, for
example, the average radius of the 2s electrons is about 3 ., whereas the
average radius of the core is only about 0.5 .. In contrast, the p orbitals
are dumbbelI-shaped (Fig. 2.5) with the three orbitals extending along
orthogonal axes.
The fact that alI but the outer few electrons form with the nucleus a
compact stable core means that the few highest-energy electrons determine in large extent many properties of the elements. This can be seen
from the periodic arrangement in Table 2.1.
The group Oelements (He, Ne, Ar, Kr, Xe, and Rn) are characterized by
a completed outer shelI of electrons (the rare gas configuration). In
helium, for example, the n = 1 shelI is completely filIed. Because of the
increased nuclear charge it is much more difficult to remove an electron
(energy required = 24.6 eV compared with 13.6 eV for hydrogen*) than is
*A unit of energy frequently used in discussing properties of atoms and molecules is the
electron volt. This is an energy unit equa1 to the energy of an electro n accelerated through a
potential of 1 volt. As an energy unit is eql}al to 1.6 x 10- 19 joule, since the charge on an
electron is equal to 1.6 x lO-l' coulomb and 1 eV = (l volt) (1.6 x 10- 19 coulomb) =
1.6 x lO-l' joule. One electron volt per molecule equals 23.05 kcal/mole.
Table 2.2.
Reaction b
Z
t..l
,J:o
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Element
H
He
Li
Be
B
C
N
O
F
Ne
Na
Mg
Al
Si
P
S
CI
Ar
K
Ca
~~""'""'""~"'1""''''''''''C~''''''_'''''''''U'''''''_~_'''"""""",,,
t..l
01
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
Sc
Ti
V
Cr
Mn
Fe
Co
Ni
Cu
Zn
Ga
Ge
As
Se
Br
Kr
Rb
Sr
11
13.595
24.581
5.390
9.320
8.296
11.256
14.53
13.614
17.418
21.559
5.138
7.644
5.984
8.149
10.484
10.357
13.01
15.755
4.339
6.111
54.403
75.619
18.206
25.149
24.376
29.593
35.108
34.98
41.07
47.29
15.031
18.823
16.34
19.72
23.4
23.80
27.62
31.81
11.868
, .. '1... $
6.54
6.82
6.74
6.764
7.432
7.87
7.86
7.633
7.724
9.391
6.00
7.88
9.81
9.75
11.84
/3.996
4.176
5.692
l>
III
122.419
153.850
37.920
47.871
47.426
54.886
62.646
63.5
71.65
80.12
28.44
33.46
30.156
35.0
39.90
40.90
46
51.21
'~-,"""""-f~"""""_~'=""t,,,,,,,,,,,,,,./,,,,,,,,,,,,,,,,,,,,,,,,,,,,,_.
12.80
/3.57
14.65
16.49
15.636
16.18
17.05
18.15
20.29
17.96
20.51
15.93
18.63
21.5
21.6
24.56
27.5
11.027
24.75
27.47
29.31
30.95
33.69
30.643
33.49
35.16
36.83
39.70
30.70
34.21
28.34
32
35.9
36.9
40
...
Reaction b
IV
217.657
259.298
64.476
77.450
77.394
87.14
97.02
98.88
109.29
1/9.96
45.13
51.354
47.29
53.5
59.79
60.90
67
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
72
Element
Y
Zr
Nb
Mo
Tc
Ru
Rh
Pd
Ag
Cd
In
Sn
Sb
Te
I
Xe
Cs
Ba
La
Hf
11
III
IV
6.38
6.84
6.88
7.10
7.28
7.364
7.46
8.33
7.574
8.991
5.785
7.342
8.639
9.01
10.454
12.127
3.893
5.210
5.61
7
12.23
/3./3
14.32
16.15
15.26
16.76
18.07
19.42
21.48
16.904
18.86
14.628
16.5
18.6
19.09
21.2
25.1
10.001
11.43
14.9
20.5
22.98
25.04
27./3
34.33
38.3
46.4
28.46
31.05
32.92
34.82
37.47
28.03
30.49
25.3
31
54.4
40.72
44.1
38
32.1
19.17
__,,.,,.,,_,,,,,...,,,,.,,.._ _ _.
73.9
.43.24
48
50
64.2
45.7
50.1
43
47.3
,.m",,~
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
Ta
W
Re
Os
Ir
Pt
Au
Hg
TI
Pb
Bi
Po
At
Rn
Fr
Ra
Ac
7.88
7.98
7.87
8.7
9
9.0
9.22
10.43
6.106
7.415
7.287
8.43
__
.~.
__
16.2
17.7
16.6
17
18.56
20.5
18.751
20.42
15.028
16.68
34.2
29.8
31.93
25.56
10.144
12.1
20?
50.7
42.31
45.3
10.746
5.277
6.9
57
a Values in electron volts. The values are obtained from the ionization potentials in Charlotte E. Moore, Atomic Energy Levels as
Derived fram the Analyses of Optical Spectra (Circular of the N ational Bureau of Standards 467, Government Printing Oflice,
Washington, D.C., 1949-1958, vol. I1I). Multiply by 23.053 to convert from electron volts to kilocalories per mole.
b For reactions:
1. m O(g) = m +(g ) + e -.
11. m +(g) = m 2+(g) + e-o
m.
m2+(g)=m3+(g)+e~.
IV. m 3+ (g) =
In 4+(g )
+ e -.
36
INTRODUCTION TO CERAMICS
and the nuclear attractive force predominates over the repulsion forces of
its companion electrons. In contrast, a second electron, which must enter
the 3s orbital, is not stable; this electron finds an electrostatic repulsion
force from the ,negative F- coreo In much the same way, an electron
affinity occurs for the group VI elements, which tend to form divalent
negative ions.
As the atomic number and number of electrons increase, the relative
stability of energy levels of different orbitals becomes nearly the same.
Orbitals fill in the order 1s, 2s, 2p, 3 s, and 3p, but then the 4s orbital
beco mes more stable and fills before the 3d. However, they are nearly at
the same energy level, and chromium has a 3d s4s configuration, in which
both are incomplete. Elements with an incomplete d shell are called the
transition e/ements. They have similar chemical properties, since the
filling of the inner 3d shell has little effect on the ionization potential and
properties of the 4s electrons. They also characteristically form colored
ions and have special magnetic properties as a result of their electronic
structure. Other series of transition elements occur with incomplete 4d
and 5d shells. A similar and even more pronounced effect occurs for the
rare eartll e/ements in which the inner 4f shell is incompletely filled.
STRUCTURE OF CRYSTALS
37
~ Repulsion energy E r ,
R in A--o.-
ki -2
I+----cr-R O = 2.79 A
-4
-6
2.2
Interatome Bonds
cr
when interpenetration of electron shells begins but makes little contribution at large ion separations. The assumption that this energy term varies
as l/R'\-w-here n is a number typically of the order of 10, results in a
satisfactory description of this behavior. The total energy of the KCI pair
is
(2.3)
38
INTRODUCTION TO CERAMICS
(b)
(e)
Fig. 2.8. (a) Potential energy and (b) and (e) electro n density along a line between protons
in the hydrogen molecule.
STRUCTURE OF CRYSTALS
2.3
Li
Be
Sn Sb
Te
Cs Ba
Electronegativity
Fig.2.9.
41
1.0,----------------,---------,
(1)
0.8
u
~
ro
~ 004
.~
uro
c::
0.2
O.O'":""''''''--
0.0
---l
-.J.
-,l..,.-
1.0
2.0
Difference in electronegativity, I X A
3.0
-
X BI
Fig. 2.10. Fraction of ionic character of bond A-B related to the difference in electronegativity X A - X/J of the atoms (reference 3).
40
where Rij is. the distance between the ion under consideration and its jth
neighbor of charge Ze. Subscripts have been added to the empirical
constant B to take into account that its value may be different for
interactions between the different species of ions. For simplicity we have
neglected adding in the constant difference between' the ionization
potential and electron affinity (this, in effect, defines zero energy as when
the set of ions rather than neutral atoms is at infinite separation). The total
energy of the crystal may be obtained by adding the contributions (Eq.
2.4) of every ion in the crystal, but the result must be multiplied by 1/2:
the interaction of an ion pair ij represents the same contribution as ji, and
simply summing Eq. 2.4 over the entire crystal would include each
interaction twice.
We would expect the energy of each ion in the NaCl structure to be the
same, so that the summation of Eq. 2.4 over the 2N ions or N
"molecules" of NaCl may be accomplished by the multiplication of Eq.
42
STRUCTURE OF CRYSTALS
INTRODUCTlON TO CERAMICS
43
=
i
(2.7)
Xij
(2.8)
and
The quantity a is caIled the Madelul1g COl1stal1t. From the way in which it
is defined, its value depends only on the geometry of the structure and
may be evaluated once and for aIl for a particular structure type. For the
NaCI structure type, a = 1.748; for the CsCI structure, 1.763; for the zinc
blende structure, 1.638; and for wurtzite, 1.641. PhysicaIly, the Madelung
constant represents the coulomb energy of an ion pair in a crystal relative
to the coulomb energy of an isolated ion pair; a is larger than unity but
not very much so. It may also be noted that the Madelung constant for the
NaCI structure type (six nearest neighbors) is less than 1% smaIler than
that for the CsCI structure type (eight nearest neighbors). The Madelung
constants for the wurtzite and zinc bIen de structures (4 nearest neighbors), which differ only in second-nearest-neighbor arrangements are
even more similar. The coulomb energies of different arrangements of
ions in a crystal may therefore be seento differ only by relatively minor
amounts.
The series which provides the value of e in Eq. 2.8 might be expected
to converge rapidly because the repulsive interaction between ions is
short-range. Unfortunately, it depends not only on structure type but also
on the particular chemical compound in question, since Bj is different for
different species of ions. The value of e, however, may be evaluated by
noting that the energy of the crystal is a minimum when the ions are
separated by Ro. Differentiating Eq. 2.6 with respect to Ro, setting the
result equal to zero, and solving for e provides.
(a)
(b)
Fig.2.11.
(2.9)
2.4 by 2N
1/2:
E= l E.
1 (2NE.) = N
2 ,2
47TE o
(2.5)
The nature of the summation depends on the ion separation as welI as the
atomic arrangement. If we let R, = Rox;;, where Ro is sorne characteristic
E=
(2.10)
._44
... __
_---------
._--------_-.............
INTRODUCTION TO CERAMICS
that the repulsive interaction between ions increases the total energy of
the crystal by only 10% or so of the coulomb energy.
Ionic crystals are characterized by strong infrared absorption, transparency in the visible wavelengths, and low electrical conductivity at low
temperatures but good ionic conductivity at high temperatures. Compounds of metal ions with group VII anions are strongly ionic (NaCl, LiF,
etc.). Compounds of metals with oxygen ions are largely ionic (MgO,
AhO], Zr02, etc.). Compounds with the higher-atomic-weight elements of
group VI (S, Se, Te), which have lower electronegativity (see Figs. 2.9 and
2.10), are increasingly less ionic in character. The strength of ionic bonds
increases as the valence increases (Eq. 2.6). The electro n distribution in
ions is nearly spherical, and the interatomic bond, since it arises from
coulombic forces, is nondirectional in nature. The stable structure assumed by an ionic compound thus tends to be one in which an ion obtains
the maximum number of neighbors (or coordination number) of opposite
charge. Such structures therefore depend on obtaining maximum packing
density of the ions.
Covalent Crystals. Each single bond in a covalent crystal is similar to
the bond between hydrogen atoms discussed in the previous section. A
pair of electrons is concentrated in the space between the atoms.
Covalent crystals form when a repetitious structure can be built up
consistent with the strong directional nature of the covalent bond. For
example, carbon forms four tetrahedral bonds. In methane CH. these are
used up 'in forming the molecule so that no electrons are available for
forming additional covalent bonds and no covalent crystal can be built up.
In contrast, carbon itself forms a covalent crystal, diamond, with bonds
arrayed periodicaHy. In the diamond structure each carbon atom is
surrounded by four other carbon atoms (Fig. 2.12). This structure, with
Fig.2.12.
STRUCTURE OF CRYSTALS
45
46
47
STRUCTURE OF CRYSTALS
~1f--
~l>----3p
First layer
Second layer
~----3s
Interstitialsite
surrounded by
eight atoms
>,
Q)
e
w
~--l------2p
'~_--l------2s
;w~-+-------- ls
r--;>-
Fig.2.14.
Fig.2.13. Energy levels in magnesium broaden and beco me bands as the atoms are brought
closer together (schematic).
together leaves the total number of quantum states with a given quantum
number unchanged, but as atoms are brought together, interaction between orbitals is increasing the number of electrons with the same
quantum number. Energy levels broaden and become alIowed bands in
which the spacing between individual electron energy levels is so cl~se
that they can be considered continuous bans of allowed energy (Fig.
2.13). In inetals the higher-energy allowed bands, or permitted energy
levels, overlap and are incompletely filled with electrons. This allows
relatively free movement of the electrons from atom to atom without the
large energies which are required for dielectrics, in which electrons must
be raised in energy to a new band level before conduction is possible.
2.4
Crystal Structures
I
.
'.
I
i
is best to do actual experiments with spheres such as ping pong bal\s, cork
bal\s, and other models which allow study in three dimensions.
Simple Cubic Structure. One way in which spheres can be packed
together is in a simple cubic array (Fig. 2.14). Each sphere has four
adjacent spheres in the plane of the paper, one aboye, and one below for a
total of six nearest neighbors. In addition, there are interstices surrounded
by eight spheres. These interstices are also in a cubic array , with one hole
for each sphere. This kind of packing is not very dense, having a total of
48% void space.
Close-Packed Cubic Structure. Another arrangement of spheres has
cubic layers with the second layer placed aboye the spaces in the bottom
layer, as iIIustrated in Fig. 2.15a. When a third layer is put on aboye the
first, we have the basis for a dense-packed structure in which each sphere
has twelve nearest neighbors, four in the plane of the paper, four aboye,
and four below. This kind of packing is more dense than the simple cubic
structure; it has a void volume of only 26%. The same structure can be
built up from hexagonallayers of spheres having six c10sest neighbors in
the plane of the paper, three aboye, and three below to give a total of
twelve, as shown in Fig. 2.15b. Other views of this arrangement which
show the cubic symmetry are given in Fig. 2.15c and d. The simplest unit
cell which gives this structure when periodically repeated is the facecentered cubic one illustrated in Fig. 2: 15 f
STRUCTURE OF CRYSTALS
Second layer
Third layer
49
First layer
Tetrahedral
interstices
Oetahedral
interstices
(e)
(a)
Third layer
begins here
Second
layer
(d)
Fig.2.15
Tetrahedral
interstices
Octahedral
interstices
Third
layer
(b)
Fig. 2.15. Various aspects of face-centered cubic packing of spheres. See text for
discussion.
48
(Colllilllled)
50
INTRODUCTION TO CERAMICS
Tetrahedral
Octahedral
(e)
(f)
Fig.2.15
(COtltitllled)
b~t ~ig .. 2.15a,. b, and f should be compared so that the nature and
dstnbutlOn of mterstitial sites is clear.
. Close-Packed Hexagonal Structure. In the close-packed cubic structure, the plane of ?ensest atomic packing is a plane in which each atom .
surrounde~ by sx. others in hexagonal symmetry, as shown' in t~;
cut~way vew of Fg. 2.l5d. If we start with a layer of atoms closely
pac ed and then add a second laye"" we can go on to add a third layer in
STRUCTURE OF CRYSTALS
51
two ways. If the third layer is not directly aboye previous layers, we end
up with a face-centered cubic lattice (Fig. 2.15f). Howeyer, if the third
layer is directly aboye the first (Fig. 2.l6a), the packing is equally dense
but has a different structure, called hexagonal close packing. From a side
view the face-centered cubic lattice corresponds to stacking layers of
displacement a, b, e, a, b, , whereas the hexagonal close-packing
structure corresponds to stacking of layers a, b, a, & (Fig. 2.16&).
Although the two packing rrangements haye the same density, there is a
difference in the arrangement of the atoms and interstices. It is very
instructiye to work out the structural features of the hexagonal cfosepacked lattice, such as those that are illustrated in Fig. 2.15, for the
face-centered cubic structure.
Space Lattices. As implied preYiously, only certain geometric forms
can be repeated periodically to fill space. By systematically considering
the yarious symmetry operations needed to deyelop a periodic structure
that fills space, it can be shown that there are 32 permissible arrangements
of points around a central point. These require 14 different Bravais or
space lattices, as illustrated in Fig. 2.17. The conventional unit cells
derived from these space lattices are described in terms of unit-cell axes
and angles (Fig. 2.18). The lattices are grouped into six systems-triclinic,
monoclinic, orthorhombic, tetragonal, hexagonal and cubic-in order of
increasing symmetry.
Geometrical featmes in a lattice, sllch as directions and planes, are most
conveniently described relative to the lInit-cell edges. Directions are
specified with the three indices which give the multiples of the cell edges
necessary as components to achieve a given bearing. A negative component is indicated by a bar over the indexo The three indices are enclosed in
square brackets to distinguish a direction from other geometrical featmes
such as points or planes. Several directions are indicated in Fig. 2.19. In
symmetrical lattices several different directions are eqllivalent. A whole
set of equiyalent directions is indicated by the symbol ( ) about the indices
of one representative direction. For example, (100) in a cubic crystal
stands for the set of six equivalent directions along the cell edges: [100],
[010], [001], [TOO], [010], [001].
Crystallographic planes are defined in terms of their intercepts on the
cell edges. The intercepts themselves are not used, since this would
necessitate use of the symbol 00 if aplane happened to be parallel to one of
the cell edges. Instead, the integers used, called Mil/er indices, are the
reciprocals of the intercepts multiplied by the factor necessary to convert
them to integers. Indices of planes are placed within parentheses to
distinguish them from directions. For the plane in Fig. 2.19b, for example,
the intercepts are 1, 00, oo. Their reciprocals are 1, O, O, and the Miller
indices assigned are (lOO). In Fig. 2.19d the intercepts are 00, 2, 4, their
Tetrahedral
interstices
First
layer
Second
layer
,./
Third
layer
Octahedral
i nterstices
Cubic F
Cubic 1
Cubic P
,/'
./
./
./
Tetragonal 1
Tetragonal P
./
a
V
./
Orlhorhombic P
Orlhorhombic
Orlhorhombic 1
Orlhorhombic F
b
a
Monoclinic
Monoclinic P
Hexagonal close
packing
.....-
(b)
Developmcnt of hexagonal close packing.
S2
Triclinic P
Fig. 2.16.
Hexagonal
Fig.2.17.
Hexagonal P
53
54
INTRODUCTlON TO CERAMICS
55
STRUCTURE OF CRYSTALS
z
Nature of
Unit-Cell
Axes and
Angles
Number of
Lattices in
System
System
Triclinic
Monoclinic
arbrc
arf3 r 'Y
a, b, e
arbrc
a, b, e
IX
Orthorhombic
Tetragonal
= 'Y = 90 r
IX,
13
arbrc
IX
IX
'Y
13
(111) Plane
(100) Plane
( b)
(a)
b, e
= 13 = 'Y = 90
a, e
= 'Y = 90
a=brc
13,
13
(1,
a=brc
IX
Hexagonal
Lengths and
Angles to Be
Specified
10141 Direction
(1,
= 13 = 90
'Y = 120
Cubic
a=b=c
IX
13
= 'Y = 90
y
(a)
x
,Z
Fig.2.19.
{3/'
/
a
(021) Plane
~)
\IX
'\
b
(110) Plane
y
(b)
Fig. 2.18. (a) The six systems containing fourteen Bravais or space lattices and conventional unit cells of crystals. (b) The lengths and angles to be specitied.
reciprocals O, 1/2, 1/4, and the MilIer indices (O 2 1). An entire set of
equivalent planes is denoted by braces about the MilIer indices of one
representative plane. Thus {lOO} in a cubic crystal represents the set of six
cube faces (100), (010), (00l), (100), (010), and (001). In cubic crystals the
direction [hkl] is always perpendicular to the plane having the same
indices. This is not generally true in any other crystal system.
If
56
INTRODUCTION TO CERAMICS
C1lordinalion
Number
Disposilion 01 lons
aboul
Cenlral Ion
Corners 0\
cube
<: 0.732
Corners al
octahedron
Carners al
tetrahedron
Stable
Fig.2.20.
Stable
Unstable
Corners 01
triangle
linear
0.414
0.225
0.155
~o
Fig. 2.21. Critical radius ratios for various coor?ina.tion numbers. The most stable
structure is usually the one with the maximum coordmatlOn number allowed by the radlUs
ratio.
57
58
Al'+
INTRODUCTlON TO CERAMICS
STRUCTURE OF CRYSTALS
BaH Be'+
As"
Bi'+
Br
1.96
Ca H Cd H Ce'+
1.36
0.35
0.74
1.00
0.95
Cr'+
Cs'+
Cu'+ Cu H Dy'+
Er h
Eu'+
0.62
0.55
1.70
0.96
0.73
0.91
0.88
0.95
In'+
K'+
LaJ+
Li'+
0.79
1.38
1.06
0.74
0.53
0.50
CI 1 -
Co'+
Co'+
Cr'+
1.81
0.74
0.61
0.73
0.71' 1.02
Cr'+
0.16
0.80
Fe'+
GaJ+
Gd'+
Ge'+
0.65
0.62
0.94
0.54
0.89
1'2.20
Mg'+
Mn'+
Mn'+
Ni'+
0'-
p"
Pb2+
Pb'+
0.72
0.67
0.54
0.67
0.65
1.02
1.00
0.69
1.40
0.35
1.18
0.78
0.64
Rb'+
S'-
S+
Sb'+
SeJ+
Se'- . Se+
Si'+
Sol'+ Sn'+
Sn+.
Sr'+
Ta"
1.49
1.84
0.30
0.61
0.73
1.98
0.42
0.40
0.96
0.93
0.69
1.16
0.64
Te'-
Te+
Th'+
Ti'+
Ti'+
TI'+
TI'+
U"
U"
y'+
y"
W'+
W+
2.21
0.56
1.00
0.86
0.61
1.50
0.88
0.97
0.76
0.79
0.54
0.65
0.58
yJ+
Yb'+
Zn'+
Zr
0.89
0.86
0.75
0.72
59
Table 2.5.
generally larger than cations, as shown in Tables 2.3 and 2.4, the critical
r~dius rat~o for a structure is almost always determined by the coordina~lOn of amo~s about the cations. This is why Pauling's first rule emphaslze~ the c~tlOn coordination polyhedron. For a given pair of ions, the
rad.lUs ratIo places an upper limit on the coordination number of the
catlOn. In general, geometry would permit the structure to form with any
Ion
AIJ+
0.39
As l +
0.34
BJ+
0.12
Be'+
0.27
C4+
0.15
Cd'+
0.84
Cr 4 +
0.44
Cu'+
0.63
F'1.31
Fe'+
0.63 .
FeJ+
0.49
GaJ+
0.47
Ge4+
0.40
Hg2+
0.96
Mg"
0.49
Na'+
0.99
Se6+
Nb l +
0.32
0 2-
Li'+
0.59
pl +
N"
0.13
S6+
1.38
Si4+
0.26
Vl +
0.36
0.29
0.33
W6+
0.41
Pb'+
0.94
Zn2+
0.60
0.12
I1
B'+
Be'+
Lr
Si4+
AI'+
Ge 4 +
Mg2+
Na+
Ti4+
SeJ+
Ar4+
Ca'+
Ce4+
K+
Cs+
Radius
(CN = 6)
0.16
0.25
0.53
0.29
0.38
0.39
0.51
0.73
0.44
0.52
0.51
0.71
0.57
0.99
1.21
Source. Referenee 3.
Predieted
Coordination
Number
3
4
6
4
4
4
6
6
6
6
6
6,8
6
8, 12
12
Observed
Coordination
Number
3,4
4
4
4,6
4,5,6
4, 6
6
4,6,8
6
6
6, 8
6,7,8,9
8
6,7,8,9, lO, 12
12
Strength of
Eleetrostatie
Bond
1 or 3/4
1/2
1/4
1
3/4 or 1/2
1 or 2/3
1/3
1/6
2/3
1/2
2/3 or 1/2
1/4
1/2
1/9
1/12
60
61
INTRODUCTION TO CERAMICS
STRUCTURE OF CRYSTALS
gcometrical. The separation of the cations within the polyhedron decreases as the polyhedra successively share corners, edges, and faces and
the repulsive interaction between cations accordingly increases. Pauling's
fourth rule states that polyhedra formed about cations of low coordination number and high charge tend especially to be linked by corner
sharing. That this is true may be appreciated by recognizing that the
repulsive interaction between a pair of cations increases as the sguare of
their charge and that the separation of cations within a coordination
polyhedron decreases as the coordination number becomes smaller. A
fifth rule states that the number of different constituents in a structure
tends to be small. This follows from the difficulty encountered in
cfficiently packing into a single structure ions and coordination polyhedra
of different sizes.
(a)
(e)
Fig.2.22. Tetrahedra and octahedra Iinked by sharing (a) comer, (b) edge, and (e) face
(reference 3).
2.6
Oxide Structures
Most of the simple metal oxide structures can be built up on the basi~ of
nearly c1ose-packed oxygen ions, with cations placed in available interstices; this similarity isillustrated for a large number of structures in
Table 2.6 and is emphasized in the discussion of common structures.
Rock Salt Structure. Many halides and oxides crystallize in the cubic
rock salt structure which has aIready been iIIustrated in Fig. 2.11. In this
structure the large anions are arranged in cubic close packing and all the
octahedral interstitial positions are filled with cations. Oxides having this
structure are MgO, CaO, SrO, BaO, CdO, MnO, FeO, CoO, and NiO. The
coordination number is 6 for both cation and anion. For stability the
radius ratio should be between 0.732 and 0.414, and the anion and cation
valences must be the same. AII the alkali halides except CsCI, CsBr, and
esI crystallize with this structure, as do the alkaline earth sulfides.
Wurtzite Structure. In beryllium oxide the r~dius ratio is 0.25, reguiring tetrahedral coordination of four oxygen about each beryllium ion. The
bond strength is then egual to one-half so that each oxygen must be
coordinated with four cations. These reguirements can be met with
hexagonal packing of the large oxygen ions, with half the tetrahedral
interstices filled with beryllium ions so as to achieve maximum cation
separation (Fig. 2.23). This structure also occurs for wurtzite, ZnS, and is
commonly known as the wurtzite structure.
Zinc B1ende Structure. Another structure having tetrahedral coordination is the zinc blende structure iIIustrated in Fig. 2.24. This structure is
based on cubic c10se packing of the anions. A BeO polymorph with this
structure has been observed at high temperatures.
Table 2.6.
Anion Packing
o-
Coordination
Number
of M and
Sites
by Cations
Examples
Structure N ame
Cubic close-packed
6:6MO
AH ocl.
Rock salt
Cubic close-packed
Cubic close-packed
Distorted cubic
close-packed
Cubic close-packed
4:4MO
4: 8 M,O
6: 3 MO,
1/2 tel.
AH tet.
1/2 oct.
Zinc bIen de
Antifluorite
Rutile
12:6:6ABO,
Perovskite
Cubic c1ose-packed
4:6:4AB,O,
Spinel
Cubic close-packed
4:6:4 B(AB)O,
Hexagonal closepacked
Hexagonal closepacked
Hexagonalclosepacked
Hexagonal closepacked
Hexagonal closepacked
Simple cubic
Simple cubic
4:4MO
1/8
1/2
1/8
1/2
1/2
6:6MO
tel. (A)
ocl. (B)
tel. (B)
ocl. (A, B)
tel.
Spinel
(inverse)
Wurtzite
AH ocl.
Nickel arsenide
6:4 M,O,
2/3 ocl.
Corundum
6:6:4 ABO,
Ilmenite
6:4:4 A,BO,
1/2
1/8
AH
1/2
Olivine
Mg,SiO" Fe,SiO,
CsCl
Fluorite
8:8MO
8~4 MO,
ocl. (A)
tel. (B)
cubic
cubic
,,,,~~,~,:,,;i~~.\!i!m:~
.>,:f,;.~)t:0 .:)~tLf:,.;~J!f
4: 2 MO,.
;-l,;~:J!R,_.it.t;
->
__ t>,-_~-"; __<i'~Mmt
,; n. W34
1!ide...
SiO,~
Silica Iyrcs
b)\!jo4"_~
!<!
'Tl
rf.i'
'"
'"
~
---------
:::1
---------------~
I \
lQ
'"
'f'o"
:;'
(")
rj
r>
'"
"
'"
!!3
o
O'
'"
,.- N
p..
ot..l
n
;:;
l'
..,c::
'(
!__
H.
(b
------~-------~
-
I
I
I
I
I
'"
!!3
:?;
c::
(")
.,"
::>
;;
O'
(b
I
I
I
O
Ol
'"
p ..
O
[f]
><
'<
a:>
(b
'o"
V'
'O
----- ----~L'
V
~.
o'
'"
'":;'
::r::
__" J
'-
\',
......
\~
GeO,
:;:;,nw_>->.A:".c__ ",~
64
INTRODUCTION TO CERAMICS
l.
.1
.1
;-
11.
I
..-.,
/1
Octahedral interstice
(32 per unlt cell)
Tetrahedral Interstice
(64 per unit cell)
Ooxygen
J,
Oxygen
- " /.J
J. O
()
Octahedral catian
Tetrahedral cation
(a)
Fig. 2.25(a). Spinel structure. From A. R. von Hippel. Dielectrics and Waves. John Wiley
& Sonso New York, 1954.
(b)
Fig. 2.25(b).
65
I . 1/
I(,~
o"'
C\
+/(
66
STKUCTUKE UF Un:::-.IAL::-'
INTRODUCTlON TO CERAMICS
Fig.2.26.
ul
Antiftuorite Structure. An oxide structure consisting of a cubic .c1osepacked array of oxygen atoms with cations arrangea in the te~rahed~al
sites has cations and anions just reversed from the normal f1uonte lattlce
(Fig. 2.27). This structure is observed for LhO, Na 20, and K 20.
Perovskite Structure. Previous oxide structures have been based on
c10se packing of anions. A somewhat different structure occurs where
large cations are present which can form a close-packed structure along
with the oxygen ions. This is the case for perovskite, CaTi0 3 , in which the
Ca2+ and 0 2- ions combine to form a c1ose-packed cubic structure with
the smaller, more highly charged Ti 4+ ion s in octahedral interstices. The
2
2
structure is iIIustrated in Fig. 2.28. Each 0 - is surrounded by four Ca +
2
and eight 0 2-; each Ca 2+ is surrounded by twelve 0 -. In the center of the
face-centered cubic unit cell the small, highly charged Ti" is octaheclrally
2
coordinated to six 0 -.
We can apply Pauling's rules for bond strength and coordination
number. The strength of the Ti-O bond is two-thirds; each Ca-O 2bond is
4
one-sixth. Each oxygen is coordinated with two Ti + and four Ca + for a
total bond strength of 4/3 + 4/6 = 2, which is equal to the oxygen valency.
The perovskite structure is observed for CaTiO" BaTiO" SrTi0 3 ,
SrSnO" CaZrO" SrZrO" KNBO" NaNBO" LaAIO" YAIO" and KMgF"
among others. Similar structures (c1ose-packed large cations and anion.s
along with smaller cations and interstitial sites) occur for other composltions such as K 2SiF6 (KSi,/2F,).
STRUCTURE OF CRYSTALS
Fig.2.27.
Fluorite structure.
/(il)---a---::~-=:~
c:v:----t----- ---~/
I
I
I
I
~I
:
I
I
,
I
I
I
I
I
I
I
KJI
r------=-----+----
68
'\:
I
I
I
I
Fig.2.28.
I
I
I
I
I
69
*J.
70
INTRODUCTION TO CERAMICS
STRUCTURE OF CRYSTALS
71
Silicatc Structures
Fig. 2.29. Sorne siJicate ion s and chain structures. Planar configurations are considered in
the next section.
72
STRUCTURE OF CRYSTALS
INTRODUCTION TO CERAMICS
--l_p t
<'\
Fig.2.31.
Fig.2.30.
.'
73
-L
--:L
74
INTRODUCTION TO CERAMICS
the large positive ions form feldspars; smaller ones that enjoy octahedral
coordination form chains or layer silicates.
Much more open alumina-silica frameworks occur in the zeolites and
ultramarines. In these compounds the framework is sufficiently open for
there to be relatively large channels in the structure. The alkali and
alkaline earth ions present can be exchanged in aqueous solutions, leading
to their use as water softeners. In addition, these channels can be used as
molecular sieves for filtering mixtures on the basis of molecular size. The
size of the channels in the network depends on the composition.
Derivative Structures. Defining a derivative structure as one derived
fram a simpler bsic structure, there are many. of these which are closely
related to the structures of silica. One way that this can occur is by
distorting the bask structure. This is the case of quartz, tridymite, and
cristobalite, all of which have low-temperature forms that are distorted
fram the more symmetrical high-temperature forms. This distortion
occurs by the shifting of ions, schematically illustrated in Fig. 2.32.
(a)
(a)
(b)
Fig. 2.32. Schematic iIIustration of relationship between (a) high-temperature and (b)
low-temperature forms of quartz.
Another way of forming derivative structures is by substituting different chemical species. When this is accompanied by a change in valence,
additional ions must be substituted. This leads to a wide variety of stuffed
silica structures* in which AI3+ replace Si 4 +, and other atoms are stuffed
into interstices in the structure in order to maintain a charge balance. The
interstices in the quartz structure are relatively small, suitable only for Li+
or Be2 + ions. Eucryptite, LiAISi0 4 , is a stuffed derivative of quartz.
*M; J. Buerger, Am. Miner., 39, 600 (1954).
(e)
o Oxygen
Silicon
Fig. 2.33. Atomic arrangements of Si,O, and AIO(OH), layers. Patterns (a) and (1)) are
idealized, and (e) and (d) are the distorted arrangements found to occur in kaolinite and
dickite by R. E. Newnham and G. W. Brindley, Acta Cryst., 9, 759 (1956); 10, 89 (1957).
From G. W. Brindley, in Ceramie Fabrieation Proeesses, W. D. Kingery, Ed., Technology
Press, Cambridge, Mass., and John Wiley & Sons, New York, 1958.
75
STRUCTURE F CRYSTALS
77
The interstices in tridymite and cristobalite are larger, and there are
many structures derived fram these basic ones. Stuffed derivatives of
tridymite are the most common and include nepheline, KNa3A14Si4016'
several forms of KAISi04, and many others. Stuffed derivatives of
cristobalite include carnegeite, N aAISi0 4.
2.8
(b)
Aluminum
Fig.2.33
o Oxygen
(Colltillued)
76
Hydroxyl
Fig. 2.34. Perspective drawing of kaolinite with Si-O tetrahedrons on the bottom half of
(he layer and Al-O, OH octahedrons on the top halL From G. W. Brinkley, in Ceramic
Fabricatioll Processes, W. D. Kingery, Ed., Technology Press. Cambridge, Mass., and John
Wiley & Sons, New York, 1958.
78
INTRODUCTION TO CERAMICS
STRUCTURE OF CRYSTALS
Water
layers
~
~
Water layer
~
~
Water
layers
Water fayer
10.1
7.2
Kaolinite
o Oxygen.
Halloysite
(Hydrated)
(OH).
Silicon.
79
10.0
Montmorillonite
(Hydrated)
1
Mica
(Muscovite)
() Si-Al.
Fig.2.35. Layer structure oi clays and similar materials. From G. W. 8rindley, in Ceramic
Fabrication Processes, W. D. Kingery, Ed., Technology Press, Cambridge, Mass., and John
Wiley & Sons, New York, 1958.
Aluminum.
Fig. 2.35
Chlorite
J'f\
<i.J
AI-Mg.
O Potassium.
(Conlilllled)
natural clay containing absorbed Ca2+ can react with sodium silicate to
form insoluble calcium silicate and the sodium clay:
2
Na+
Clay(
+ CaSiO]
'Na+
(2.11)
INTRODUCTlON TO CERAMICS
STRUCTURE OF CRYSTALS
Carbides. Carbide structures are fixed mainly by the small size of the
carbon atom, which can readily fit into interstitial positions. Consequently, most of the transition metal carbides tend to have close-packed
metal atoms with carbon atoms in the interstices. The metal-carbon
bonding in these structures is intermediate between covalent and metallic.
Compounds of carbon with atoms of similar electronegativity, as in SiC,
are completely covalent. One common form of SiC has a structure similar
to wurtzite (Fig. 2.24).
Nitrides. Nitride structures are similar to carbides; the metal-nitrogen
bonding is usually less metallic in nature than the metal-carbon bonds.
80
2.9
Other Structures
Fig.2.36.
Graphite structure.
2.10
81
Polyrnorphisrn
Polymorphs are different crystalline modifications of the sam chemical substance, and the word polymorphism is used to describe the general
relations among the several phases of the same substance without regard
to the number of phases being considered. The crystallographic aspects of
polymorphism have been considered in somedetail by Buerger (reference
5). Many materials exist in more than one crystallographic formo For
zirconia, Zr02, the stable form at room temperature is monoclinic, but
there is a transition at about 1000C to a tetragonal formo This transition is
accompanied by a large volume change, and a disruption of ceramic
bodies made with pure zirconia results. Although hexagonal a-alumina is
the thermodynamically stable form of AbO) at all temperatures, a cubic
form, ')'-'alumina, can also be formed under sorne circumstances. Many
other materials important to ceramics exist in different polymorphic
forms (C, BN, Si0 2, Ti0 2, As 20), ZnS, FeS2, CaTiO), AbSiO" etc.). A
ceramic material which is particularly rich in polymorphic forms is silica.
Polytypisrn. Polytypism is used to denote a special type of polymorphism in which the different structures assumed by a compound differ only
in the order in which a two-dimensionallayer is stacked. Tli'e wurtzite and
sphalerite forms of ZnS, for example, are polytypes, since they differ only
in the order in which sheets of tetrahedra are arranged. Other polytypes
are known for ZnS. The effect is common in layer structures (e.g., MoS 2,
CdIz, graphite, and layer si}icates such as the c1ay mineral s). Silicon
carbide, a ceramic material of considerable importance, holds the honor
of being the material which display s the richest collection of polytypic
forms. The basic unit of these structures is the tetrahedrallayer as in ZnS.
At least 74 distinct stacking sequences have been found in crystals of SiC,
some of which require lattice constants of up to 1500 to define the
distance over which the stacking sequence repeats.
Therrnodynarnic Relations. Which of a group of polymorphs is stable
82
83
INTRODUCTlON TO CERAMICS
STRUCTURE OF CRYSTALS
= E +PV -
TS
(2.12)
Eg
Ez
El
I
;"
Q)
e
w
Gl
Temperature ~
Fig. 2.37. Relationship between internal energy E and free energy G of polymorphic
forms; E) > E, > E, and S) > S, > S,.
STRUCTURE OF CRYSTALS
(a)
~ lr~iSPlaCiVe
~Sformation
(b)
(e)
(d)
~jg. 2.38. Open form of stru~ture a showing displacive transformations nto colla sed
5~~ms b and e and reconstrucllve transformation into basically different form d (refer~nce
84
85
A particular type of displacive transformation which has been extensively studied in metals is called the martellsite transformation. Because
il is diffusionless and requires only a shear of the parent structure to
oblain the new phase, the rate of transformation at any temperature
occurs nearly instantly. It is welI documented for the austenite
(cubic)-martensite (tetragonal) transformation in steels, and in ceramics
by the cubic BaTi0 3-tetragonal (ferroelectric) BaTi0 3 transition and the
lelragonal-monoclinic inversion in Zr02. In Fig. 2.39, the zirconia inversion is shown. There are two internalIy twinned martensitic lathes in a
Iwinned matrix (Fig. 2.39a). N o thermally activated diffusion is required,
and the shear at the coherent interface between the monoclinic and
tetragonal phases is thought to be accommodated by a series of dislocatons. The large hysteresis in the transformation temperature is 'attributed
lo Ihe large difference in specific volume of the phases. Figure 2.39b
shows another type of martensite plate viewed edge-on; in this case
neilher the matrix nor the pI ates are twinned.
Reconstructive Transformation. Another way of changing the secondary coordination is by completely altering the structural relationships, as
in Ihe transformation from Fig. 2.38a to d. Here the change in structure
cannot be arrived at simply by displacing atoms, but interatomic bonds
must be broken. The energy required for this breaking up of the structure
is rccovered when the new structure is formed. In contrast, there is no
activation energy barrier to a displacive transformation. Consequently,
transformations of this structural type are frequently sluggish. Highlemperature forms can often be cooled below the transformation temperalure without reverting to the thermodynamic stable formo This kind of
lransformation has been called a reconstructive transformation.
A reconstructive transformation can take place in several ways. One
way is the nucleation of a new phase and growth in the solid state. In
addition, if there is an appreciable vapor pressure, the unstable modificalion can vaporize and condense as the more stable lower-yapor-pressure
formo Similarly, many transformations are speeded up by the presence of
a iquid in which the greater solubility of the unstable form allows it to go
into solution and then precipitate as the more stable formo (This method is
uscd in the manufacture of refractory silica brick in which the addition of
a small percentage of lime acts as a flux at the firing temperature,
dissolving the quartz and precipitating silica as tridymite. Tridymite is
dcsirable because the high-Iow inversion involves a much smalIer volume
change than the high-low quartz transformation.) Reconstructive transformations can al so be speeded by the addition of mechanical energy. As
is clear from the structural changes, reconstructive transformations
require a high activation energy and frequently do not take place at alI
87
STRUCTURE OF CRYSTALS
004
m .. ~
Table 2.7,
ReCOIlBt.ruetvc
High
quartz
867C
High
DWPla:~~:jYrmte
147oC
High
cristobalite
16o~C
Mddle
DWPlat:~:Yjmrite
Displacive
200-270 oC
105C
Fi~. 2.3~ . . Martensitic transformation in ZrO,. (a) Monoclinic plates (A and B) with fine
tWInS wlth~n the plates. ~h.e regions bet.ween the plates are also twinned (T, and T,j. (b)
Edge-on vlew of monochnIC plates (whlch are nat twinned) in a tetragonal matrix. From
Bansal and Heuer, Acta Met., 20, 1281 (1972);'
86
Low'
Low
Low
quartz
t.ridymite
cristobalite
88
STRUCTURE OF CRYSTALS
INTRODUCTION TO CERAMICS
Suggcstcd Reading
C. Kittel, Introducton to Salid State Physics, 4th ed., John Wiley & Sons,
lnc., New York, 1971.
~.4.
2.
R. Sproull, Modern Physics: A Textbook for Engineers, John Wiley & Sons,
lnc., New York, 1956.
~.5.
3.
4.
5.
6.
2.6.
9.
lO.
11.
12.
2.7.
2.8.
2.9.
~.IO.
Problems
In sixfold eoordination the radius of K+ is 1.38 and of oxygen is 1.40 . Sorne
reeent measurements have suggested the possibility that the K - O radius sum in a
potassium silieate glass is 2.4 A. Can you propose a eonjeeture that might aeeount for
this? Explain how your eonjeeture would or would not eomply with Pauling's rules
for ionie struetures.
2.2. Graphite, mica, and kaolinite have similar struetures. Explain the differenees in their
struetures and resultant differenees in properties.
2.3. The strueture of lithiurri oxide has anions in eubic close paeking with Li+ ions
oeeupying all tetrahedral positions.
(a) Compute the value of the lattiee eonstant..
(b) Caleulate the densty of Li,O.
2.1.
1.
2.11.
2.12.
89
90
Silicates have structures in which SiO:- tetr,~hedra share vertice;_ to. f~rm
chains, rings, sheets, etc. In phosphates (P04 ) and sulfates (S04 ) s[mllar
tetrahedra are found, but they are always isolated. Yet AIP0 4 has a structure
which corresponds to that of quartz, SiO,.
(d) The alkaline earth oxides, MgO, SrO, BaO, all have the rock salt structure. The
hardness and melting points of the compounds decreases in the order given.
(e) MgO (rock salt structure) and Li,O (antifluorit~ st~uctur~) bo.th are based on
cubic c1ose-packed oxygen, with cations occupymg mterslIces [.n th~ ar~ay. Yet
predominant point defect in MgO is of the Schottky type; that m LI,O IS of the
Frenkel type.
The
garnets
Mg,AI,(Si0 4), and Fe,Ah(Si0 4), are iso~orphous in.a manner si~i\ar t.o
2.13.
Fe,Si0 4 and Mg,Si0 4. They are not isomorphous wlth Ca,AI,(S~04)" an~ nelther [S
Mg,Si0 4 or Fe,Si0 4 isomorphous with Ca,Si0 4. Give an explanalIon for t.hls bas~d on
ionic size and coordination numbers. On the basis of your theory predlct a mmeral
not mentiolid in this question that will be isomorphous with Mg,Si0 4, one for
Ca,Si0 4, one for Mg,AI,(Si0 4)" and one for Ca,AI,(Si0 4),.
2.14. A certain engineer was asked to identify sorne plate-shaped crystals that had
crystallized from a glass melt. The X-ray diffraction pattern showed they were a
single phase (only one kind of crystal structure), but the chemical an~l~sis ind~cated a
complicated formula KFA1FBaOMgOAI,O,5MgSiO, on an :mplT~ca~ bas[s. If he
called you in as a consultant, would you be able to show hlm th[s IS related.w
m~QYjte (potassium mica) and to the talc or pyrophillite crystals? .Show what
substitutions in talc or pyrophillite that have been made to produce th[s crystal.
(e)
Structure
o
Glasses
INTRODUCTION TO CERAMICS
92
3.1
Glass Formation
Q)
E
:J
>
TI'
Temperature
(a)
Q)
~o
Vz
>
VI
'1'0
'1'1'1
'lez
Temperature
(b)
TI';
STRUCTURE OF GLASSES
93
slructure does not relax at the cooling rate used. The expansion coefficient for the glassy state is usually about the same as that for the
crystalline solid. If slower cpoling rates are used so that the time available
for the structure to relax is increased, the supercooled liquid persists to a
lower temperature, and a higher-density glass results. Similarly, by
heating the glassy material in the annealing range, in which slow relaxation can occur, the glass structure in time approaches an equilibrium
den~ity corresponding to the supercooled liquid at this temperature.
A concept useful in discussing the properties of glasses is the glass
transition temperature Tg , which corresponds to the temperature of the
inlersection between the curve for the glassy state and that for the
supercooled liquid (Fig. 3.1). Different cooling ratt::s, corresponding to
different relaxation times, give rise to a different configuration in the
glassy state equivalent to different points along the curve for the
supercooled liquid. In the transition range the time for structural rearrangements is similar in magnitude to that of experimental observations. Consequently the configuration of the glass in this temperature
range changes slowly with time toward the equilibrium structure. At
somewhat higher temperatures the structure corresponding tO'equilibrium
al any temperature is achieved very rapidly. At substantially lower
lemperatures the configuration of the glass remains sensibly stable over
long periods of time.
In discussing the structural characteristics of glasses, reference is often
made to the structure of a particular glassy material. It should be noted,
however, that any determination of glass structure is only meaningful
wilhin Iimits seen from the volume-temperature relations shown in Fig.
3.1. As the liquid is cooled from a high temperature without crystallizing,
a region of temperature is reached in which a bend appears in the
volume-temperature relation. In this region, the viscosity of the material
has increased to a sufficiently high value, typically about 10'2 to 10 13 P, so
lhat the sample exhibits solidlike behavior. As shown in--Fig. 3.1 b, the
glass transition temperature increases with increasing cooling rate, as do
lhe specific volumes of the glasses which are formed. In the case shown,
lhe specific volume of the glass at temperature T o can be VI or V 2 0r V),
depending on which of the three cooling rates was used in forming the
glass. The maximum difference in specific volume obtainable with varialions in the cooling rate is typically in the range of a few percent; only
within this range can one spcak of the structure of a glass without
carefully specifying its mode of formation.
Noncrystalline solids can be formed in other ways besides cooling from
lhe liquid state, and their structure may differ significantly from glasses
formed by the cooling of liquids. Among these alternative methods, the
94
INTRODUCTION TO CERAMICS
most widely used and most effective method for materials which are
difficult to form as noncrystalline solids is condensation from the vapor
onto a cold substrate. When a vapor stream formed by electron-beam
evaporation, sputtering, or thermal evaporation impinges on the cold
substrate, thermal energy is extracted from the atoms before they can
migrate to their lowest free-energy configuration (the crystalline state).
Another method of forming glasses is by electrodeposition; Tazas, Oe,
and certain Ni-P alloys are among the materials which have been
prepared in this way. N oncrystalline solids can also be formed by
chemical reactions. Silica gel, for example, can be manufactured from
ethyl silicate by the reaction
H,o
-H
STRUCTURE OF GLASSES
95
25
20
:s:
Q.
1: 15
1,
..;-
10
(3.1)
6
In this reaction the SiOz resuIting from the condensation of the silicic acid
is noncrystalline. A similar silica gel can be formed by the reaction of
sodium silicate with acid. These reactions are particularly effective in the
case of hydrogen-bonded structures in aqueous media. For example, the
reaction
(3.2)
r,
Fig.3.2. Radial distribution function for glassy selenium. From R. Kaplow, T. A. Rowe,
and B. L. Averbach, Plzys. Rev., 168, 1068 (1968).
3.2
96
STRUCTURE OF GLASSES
INTRODUCTION TO CERAMICS
97
Cristobalite
Silica gel
Silica glass
(a)
(b)
Fig.3.4.
Schematic representation of (a) ordered crystalline form and (b) randomnctwork Iassy form of the same composition.
0.28
Fig.3.3. X-ray diffraction patterns of cristobalite. silica gel, and vitreous silica. From B. E.
Warren and J. Biscal, J. AIIJ. CerallJ. Soc., 21, 49 (1938).
98
INTRODUCTION TO CERAMICS
Table 3.1.
M in
MO,
Valenee
Dissoeiation
Energy
per MO,
(keal/g-atom)
G1ass formers
B
Si
Ge
Al
B
P
V
As
Sb
Zr
3
4
4
3
3
5
5
5
5
4
356
424
431
402-317
356
442
449
349
339
485
3
4
4
4
4
4
4
4
4
6
lntermediates
Ti
Zn
Pb
Al
Th
Be
Zr
Cd
4
2
2
3
4
2
4
2
435
144
145
317--402
516
250
485
119
6
2
2
6
8
4
8
2
53-67
64
63
61
60
Se
La
Y
Sn
Ga
In
Th
Pb
Mg
Li
Pb
Zn
Ba
Ca
Sr
Cd
Na
Cd
K
Rb
Hg
Cs
3
3
3
4
3
3
4
4
2
1
2
2
2
2
2
2
362
406
399
278
267
259
516
232
222
144
145
144
260
257
256
119
120
119
115
115
68
114
6
7
8
6
6
6
12
6
6
4
4
4
8
8
8
4
6
6
9
10
6
12
60
58
50
46
45
43
43
39
37
36
36
36
33
32
32
30
20
20
13
12
11
10
Modifiers
~Na+
Fig. 3.5.
2
1
1
2
1
99
Coordination
Number
Single-Bond
Strength
(keal/g-atom)
119
106
108
101-79
89
111-88
112-90
87-70
85-68
81
73
72
73
100
rings of SiO. tetrahedra. From a given tetrahedron, the rings extend in six
directions to include the six edges and form twelve-sided dodecahedral
cavities. Because of their fivefold symmetry, these dodecahedral cages
cannot be extended in three dimensions without an accompanying strain
which ultimately prevents maintenance of the silicon-oxygen bonds.
Although pentagonal rings of SiO. tetrahedra: may indeed exist in the
structure of glasses such as fused silica, there is littIe reason to believe
that the structure is composed entirely of such elements.
According to another model, glasses are composed of micelles or
paracrystals characterized by a degree of order intermediate between that
of a perfect crystal and that of a random array. These paracrystalline
grains may themselves be arranged in arrays with differing degrees of
order. The degreeof order in the grains should be large enough to discern
their mutual misorientation in an electron microscope and smallenough to
avoid sharp Bragg reflections in X-ray diffraction patterns. Although such
models seem plausible, the evidence for the existence of such structures,
at least in oxide glasses, is marginal.
3.3
101
STRUCTURE OF GLASSES
INTRODUCTION TO CERAMICS
(a)
1.0
,
I
0.8
\
\
\
P(8)
0.4 -
Crystal \
I
I
0.2
\
\
0.6
\
\
120
130
140
150
160
170
180
190
O
(b)
Fig.3.6. (a) Sehematie representation of adjaeent SiO, tetrahedra showing Si-O-Si bond
angle. Closed cirelcs = Si; open eircles = O. (b) Distribution of Si-O-Si bond angles in fu sed
siliea and erystalline erystoba1ite. From R. L. Mozzi, Se.D. thesis~MIT, 1967.
102
INTRODUCTION TO CERAMICS
STRUCTURE OF GLASSES
1
f
o
Si
Structure .
2-2.5
Network,
2.5
Network.
2.5-3.0
3.0
3.0-3.5
3.5
103
3.5 - 4.0
4.0
Fig.3.8.
Orthosilicate ions,
STRUCTURE OF GLASSES
INTRODUCTION TO CERAMICS
104
For silicate glasses, when the oxygen polyhedra are Si0 4 tetrahedra,
SiliconOxygen
Groups
2
2.5
2.75
3
SiOl
Si4 0 lO
Si 4 0 l1
SiO J
3.5
X = 2R-4
Structural Units
Three-dimensional network
Sheets
Chains
Chains
Rings
Tetrahedra sharing one
oxygcn ion
1solatcd orthosilicate
tetrahedra
Examples
Table 3.3.
Orthosilicates
Composition
Fol1owing Stevels,:!: for glasses containing only one type of networkforming cation surrounded by Z oxygens (Z = 3 or 4), with X nonbridging
(Le., singly bonded) and Y bridging oxygens per polyhedron, one may
write
(3.3)
X +0.5Y = R
and
X+Y=Z
*Op. cil.
y = 8-2R
and
In the case of silicate glasses containing more alkali and alkaline earth
oxides than Ab03, the AI3+ is believed to occupy the centers of AI0 4
tetrahedra. Hence the addition of Ab03 in such cases introduces only 1.5
oxygens per network-forming cation, and nonbridging oxygens of the
structure are used up and converted to bridging oxygens. This is shown in
Table 3.3, in which the values of X, Y, and R are given for a number of
glass compositions.
Quartz
Tale
Amphiboles
Pyroxenes
Beryl
Pyrosilicates
for each cation; for univalent alkali ions, only one such oxygen is
required.
An X-ray diffraction study of a number of K 20-Si02 glasses by G. G.
Wicks* indicates systematic changes in the structure as the alkali oxides
are added to Si0 2. The data seem to indicate a random-network structure
in which the alkali ions are distributed in pairs at random through the
structure but located adjacent to singly bonded oxygens. In the case of a
TbO-Si0 2 glass containing 29.4 mole% TI 20, Blair and Mil~ergt suggest
clustering of the modifying cations, with an average cluster diameter of
about 20 .
It is sometimes convenient to describe the network character of silicate
glasses in terms.of the average number R of oxygen ions per networkforming ion, usually the oxygen-silicon ratio. For example, R = 2 for
Si0 2; for a glass containing 12 g-atom% Na 20, 10 g-atom% CaO, and
78 g-atom% Si0 2
105
SiO,
Na lO2SiO l
NalO' I!2AI,OJ2SiO l
Na lOA1OJ2SiO l
NalO'SiOl
P 10 5
2
2.5
1
0.5
2.25
2
3
3.5
4
3
2.5
2
1
Firing
Temperature
Description
Leadless raw
porcelain glaze,
glossy
Leadless raw
porcelain glaze,
mat
High-temperature
glaze, glossy
Bristol glaze,
glossy
Aventurine glaze
(crystals
precipitate)
Lead-containing
fri tted glaze,
glossy
Lead-containing
fritted glaze,
glossy
Lead-containing
fritted glaze,
glossy
....
Q
CI\
~...-r-
14'
(oC)
[~aJp [~:Jo
Al,03
PbO
Other
SiO,
B,03
Ratio
Oxygen to
Network
Former"
1250
0.3
0.7
0.4
4.0
2.46
1250
0.3
0.7
0.6
3.0
2.75
1465
0.3
0.7
1.1
14.7
2.25
1200
0.35
0.35
0.55
1125
1.0
1080
0.33
0.33
930
0.17
1210
0.05
ll," HT'j'iiilMJc.HJli,tljilji.;tlfflAfl!W
\1.-, -"
3.30
0.3ZnO
2.65
0.75Fe,03
2.56
0.15
1.25
7.0
0.33
0.13
0.53
1.73
2.61
0.22
0.65
0.12
0.13
1.84
2.25
0.50
0.45
0.27
0.32
2.70
2.30
'
'%
-'m
'N$
$-:
ii:i:'!f:i6rt4iir,.,
....o
-..l
glossy
Raw lead glaze,
mat
Raw lead glaze,
opaque
J ewelry enamel
for copper
Sheet-iron groundcoat enamel
1100
0.1
0.3
0.6
0.2
1.6
2.30
1100
0.1
0.35
0.55
0.35
1.5
2.50
1100
0.1
0.2
0.7
0.2
2.0
950
0.5
0.5
0.1
0.1
1.5
850
1.0
0.3
1.0
3.6
0.3CaF,
0.06CoO + NiO
0.08MnO,
2.28
820
0.73
1.4
0.18SnO,
2.72
800
0.76
3.3
0.24Na,SF 6
1.05TiO,
2.46
0.27
1.05
O.33SnO,
2.68
2.40
o:J
INTRODUCTION TO CERAMICS
108
Ir)
in Table 3.4. Usually soda lime silica glasses have an oxygen-to-networkformer ratio of about 2.4. The compositions of these and other commercial glasses are shown in Table 3.5.
Borate Glasses. It has been established* that the addition of alkali or
alkaline earth oxides to B2 03 results in the formation of BO. tetrahedra.
The variation of the fraction of four-coordinated borons with the concentration of alkali oxide is shown in Fig. 3.9. The smooth curve shown in the
0.60 ..--------.1---.-1------.1---,.-----.---.,..-----,
"O
U
(1)
C/J
'"<lJ
'"'"o:
G
-;
'2
ro
'C:;
'2
E
E
e
...
.c::: 0.50-
<lJ
o
o
6
rii
t-
1r)000\D\DNIr)
MONOOOOO
-
1""""1
.n
:l,
c::
N
.'
*.
N o
'<!' ....,
'<!'1r)0...
--
0000
<lJ
VJ
.c::: 0.30-
'"o
E
ro
g
o
..o
-;(J
'c;.,..
0.20-
"'"
~
c:
e
:.:::
1
Mole
30
40
% alkali
rnodifier
50
60
70
Fig. 3.9. 'l'he fraction of boron atolllS in UO. conflgurations in alkali borate glasses plotted
againsllhe molar percent of alkali oxide. From P. J. Bray, in IlIteractioll o[ Radiatioll witiJ
triangular arrangements.
*P. J. Bray in A. Bishay, Ed., [lIteractiolt o[ Radiatioll with Solids, Plenum Press,
Publishing Corporation, New York, 1967.
0900000
C/J
:02'
O
(ci'
Z
O
Q.
:Q
O\t-,<!,Ir)f<)
r.,.)
o:
ro
01l
...eQ.
<
'(
Q.
figure represents the assumption that each of the oxygens added with the
alkali ions converts two triangles to tetrahedra. Up to alkali oxide
concentrations of about 30 mole%, nearly all the modifier oxides have the
effect of converting B0 3 triangles to BO. tetrahedra. Beyond this composition range, the experimentally determined fractions of four-coordinated
borons depart significantly from the indicated curve, and this suggests
that singly bonded oxygens are produced in appreciable numbers. These
singly bonded oxygens are presumably associated with B0 3 triangles
rather than with BO. tetrahedra, since the requirements for local charge
compensation by the modifying cations is simpler in the case of the
MC?("'f")N~MN
'Vi
6C/J
tri
l"
<lJ
:co:
"'"
ro
'
f.I..
q
~
ii
r-i ...
r.,.)
...
'<l:"!"':oc!~"!oc!oc!~~OOOO\
::2~\D20\ooO\~~-o\od
\D
Ir) \D
o - o
0-
00000
f<) '<!'
00
00
......
110
INTRODUCTION TO CERAMICS
STRUCTURE OF GLASSES
JG=_s
JT
For several decades after the pioneering work of Warren, glasses were
regarded as homogeneous materials, and the conceptual picture of the
random network was widely accepted as the best structural model for
glasses. Despite this wide acceptance, however, it was known that several
glass systems, such as the alkaline earth silicates, exhibited miscibility
gaps in their phase diagrams, and it was also known that heterogeneities
provided the structural basis for the commercial Vycor process. In this
process, a glass containing about 75 wt% Si0 2, 20 wt% B20], and 5 wt%
*0. O. Wicks, op. cit.
tAo E. R. Westman in J. D. Mackenzie, Ed., Modem Aspects of the VitreoLls State, Vol. 1,
Pergamon Press, New York, 1961.
111
(3.4)
f
1
For composition Co at temperature T 2 , the lowest free-energy configuration consists of a mixture of two phases of compositions ca and C f3 , in
STRUCTURE OF GLASSES
INTRODUCTION TO CERAMICS
112
2400 ~--.,---,----r----'
113
1600
TI --------------TI
Cristobalite
2200
+ liq.
1400
~
~ 2000
Liquid
<1J
"-
1200
~ lS00
Tridymite
1000
1600 4--.J----+--JL.l----,L~
Ca 10 Ca 20 C IJ 30
Si02
High quartz
MgO
+ liq.
+ liq.
SOO
Composition (wgt. %)
(a)
600
/
/
400
,.,
!
Low quartz
I
I
+ Na2Bg013
I
I
l:"
<1J
<1J
<1J
<1J
200
W::
ca
10
MgO
Si02
Composition (wgt. %)
(b)
4e
6e
se
0'--::--'-_-'-----'-_L---.L_L.---.L_.l.----L-lJ
Na2Bg013
20
CL
Ca
Ca
C{3
Composition (wgt. %)
Fig.3.11. Metastable liquid-liquid immiscibility in the system Na,B.O lJ -Si0 2 From T. J.
Rockctt and W. R. Foster, J. Am. Ceram. Soc., 49,31 (1966).
proportions Xa.1' given by the familiar lever rule (see Chapter 7):
Xa
XI'
(CI' - Co)
(3.5)
(Co- Ca)
II
Liquidus
1600
/ - - - - . ..........
E1400
/'
/
/
l"
.aro
Q;
a.
Liquid-liquid
miscibility gap
1000
/
/
\
\
~ 1200
O.Ip.
"-
......
L-....J
\
I
I
I
I
(a) .
800 L-L-l.-l.--L--L--L--L-...L....L.....L......L-L.......L-....J
28
24
20
16
12
8
4
O
Composition (mole % BaO)
L----.J
O.Ip.
Fig. 3.12. (a) Liquidus curve and miscibility gap in the system BaO-SiO,. (b) Direct
transmission electro n micrograph of 0.04 BaO-O.96 SiO, glass.
Fig. 3.12 (con Id.) (e) Direct-transmission electron micrograph of 0.10 BaO-0.90 SiO, glass.
Id) Direct-transmission electron micrograph of 0.24 BaO-0.76 SiO, glass. From T. P. Seward,
D. R. Uhlmann, and D. Turnbull, J. Am. Ceram. Soc., 51, 278 (1968).
114
115
116
For composltIons near the center of the miscibility gap, such as the
10 g-atom% BaO composition shown in Fig. 3.12c, the submicrostructure
is frequently observed to consist of two phases, each of which is
three-dimensionaIly interconnected. In aIl the electro n micrographs
shown, both phases are amorphous, as determined from electron diffrac
tion.
In many respects, the most interesting characteristics on this scale of
structure relate to interconnected submicrostructures such as that shown
in Fig. 3.12c. Similar submicrostructures have been reported for many
glasses and seem generaIly to be characteristic o conditions in which
there is a large volume fraction of both phases present. On subsequent
Fig. 3.13. Fracture surface of 11 PbO89 B,O) sample, showing B,O)-rich discrete parliclo
in a PbO-rich matrix. Simultaneous platinum/carbon-shadowed replica. Bar indicalo
1 micron. From R. R. Shaw and D. R. Uhlmann, J. NOII-CrYst. Solids, 1,474 (1969).
117
STRUCTURE OF GLASSES
INTRODUCTION TO CERAMICS
System
Consolute
Temp. eC)
Consolute
Composition
(mole% alkali
oxide)
LizO-B,O,
Na,O-B,03
K,O-B,O,
Rb,O-B,O,
Cs,O-B,03
660
590
590
590
570
10
16
10
10
10
Approximate
. Extent of
Immiscibility
(mole% alkali
oxide)
2-18
7-24
2-22
2-16
2-20
(1968).
118
INTRODUCTION TO CERAMICS
1700
1000 , - - - - - - , - = - - - - - r - - - - , - - - - ,
900
1600
E800
:::>
.3
.E 1500
E
'"
>-
'"D.
~
~
'"
>-
_~20
"-
700
"\ \
\
Ea
.........
--,
/
I
Liquid -Iiquid /
miscibility gap /
.
/
1400
Hypothetical \
600
\
\
\
/
/
10
I
I
60
70
80
8i02 (mole %)
90
Fig.3.15. Metastable miscibility gaps in the Li,O-Si0 2 and Na 2 0-Si0 2 systems and
hypothecated gap in the K 2 0-Si0 2 system. From Y. Moriya. D. H. Warrington. and R. W.
Douglas, Phys. Chem. Glasses, 1, 19 (1967).
100
Fig. 3.\4. Miscibility gaps in various divalent oxide-silica systems. For the BaO-SiO,
system. in which the gap is metastable. both the liquidus curve and the miscibility gap are
shown.
1830
Two liquids
Ti02 + liquid \
\
Rutile
+ liquid
Fig.3.16. Miscibility gap and its metastable extension in the system Ti0 2-SiO,. From R. C.
DeVries, R. Roy, and E. F. Osborn, Trans. Bril. Ceram. Soc., 53, 53\ (1954).
119
120
INTRODUCTION TO CERAMICS
1600,------,--------,--------,
10
:'0-'i>'/;
750 1//
700 \ ,\~. __%,
20
600
~?I=.~:; !
90
650 55011 1
30
__ --;;;
111
11'
11 :
1200
//'
t-<
80
11 ,
lit.
1/ '13
11 1
11'
!
,I
70
1/
1000
,1
"
1/
60
I
I
1
-<-BaO mole %
20
10
SiOz
*J.
50
40
30
20
70
500
-550 ,
80
- ,\
nv
10
\
90
B2 0 3
Fig.3.18. Three regions of liquid-Jiquid immiscibility in the Na,O-B,O,-SiO, system (wt%). From
W. HalIer, D. H. Blackburn, F. E. Wagstaff, and R.
1. Charles, J. Am. Ceram. Soc., 53, 34 (1970).
121
INTRODUCTION TO CERAMICS
122
CUO-Si02
40
30
20
,
10
Pri ma ry-phase-?>-[
boundary
Consolute
line
........:......:...~:.:
...! :::
Na20Si02
40
30
20
SiOz
Composition (mol %)
123
Suggested Reading
1.
2.
3.
4.
5.
6.
7.
General Discussion
Sorne 15 years ago, when the first edition of this text was prepared, l
was only possible to warn that the detailed structure of glass was complex
STRUCTURE OF GLASSES
8.
t
R. H. Doremus, G/ass Science, John Wiley & Sons, Inc., New York, 1973.
R. W. Douglas and B. ElIis, Eds., Amorpltolls Materia/s, John Wiley & Sons,
Inc., New York, 1972.
M. B. Volf, Tecltnica/ G/asses, Pitman, London, 1961.
H. Rawson, Inorganic G/ass-Forming Systems, Academic Press, Inc., New
York, 1967.
G. M. Bartenev, Tite Structllre and Mecltanica/ Properties of Inorganic
G/asses, Walters-Noordhoff, Groningen, 1970.
G. O. Jones, G/ass, 2d ed., Chapman & Hall, Ud., London, 197 I.
L. D. Pye, H. J. Stevens, and W. C. LaCourse, Eds., Introduction to G/ass
Science, Plenum Press, New York, 1972.
J. E. Stanworth, Pltysica/ Properties of G/ass, Oxford U niversity Press,
Oxford, 1953.
124
INTRODUCTION TO CERAMICS
Problems
3.1/ Lead orthosilicate forms a glass of density 7.36 g/cc. What is the oxygen density or lhj~
glass? How does this compare with fused silica (density 2.2 g/cc)? Where would you
predict the lead ions are going?
3.2.
The structure of many multicomponent oxide glasses has been found to be heterogeocous on a scale of 50 to 500 .
(a) How might such heterogeneities be detected and observed?
(b) Discuss the relation between such heterogeneities and the random-networl
model of glass structure.
(e) How might such heterogeneous structures be explained in terms of liquid-liqud
immiscibility? Include a hypothetical temperature-composition diagram, as wc~
as free energy-composition diagrams for several temperatures.
3.3.
Explain how you can experimentally distinguish among crystalline SiO" SiO, glm.
silica gel, and liquid silica. Explain in terms of the structures of these different form~
of the same composition.
3.4.
A certain glass found in recent geological formations is high in Si 0, (70+%) and AI,O.
(11.5+%). The alkalis (Na,O and K,O) are minor constituents (5%), as are the alkalinc
earths (MgO + CaO = 2%). There is almost a 10% weight los s on heating aboye aboUl
900C, and the volatile constituent associated with the weight loss is water. This gla~1
has the unusual and irreversable property of softening at 850C, becoming hard at 950
to 1100C, and then softening at about 1150C. On cooling the glass has only one ficti\'c
temperature range at 1150C similar to but higher than most commercial glasses..
Explain the irreversible softening at about 850C. For your reference, a soda-lime gla~\
has 72% SiO" 1% Al,O" 9% CaO, 4% MgO, 13% Na,O, 1% K,O.
(a) What is the fictive temperature of a glass?
(b) Why do glasses have coefficients of expansion more like liquids aboye the ficli\'c
temperature and more like crystalline solids below the fictive temperature.
(e) What would you predict would happen to the fictive temperature of a silica ir a
function of Na,O content, NaF content?
3.5.
3.6.
1(a)
(b)
3.7.
(a)
(b)
(e)
If you were asked to obtain a glass (Iiquid) at 800C with the highest mole percenl
silicon dioxide and you were restricted to only one other oxide in addition lo
silica, what additional material wouId you choose? Give an explanation.
Why does quartz melt at a temperature below the melting point of crystobalite?
Sketch a possible bond arrangement in B,O, which follows Pauling's rules and
has CN" = 3.
Enumerate Zachariasen's rules for glass formation. Does the structure you ha\'c
sketched fulfill these requirements?
Mention two distinctly different ways that structure could adapt to addition or
alkali oxide, say, Na,O.
3.8.
3.9.
Structural
Imperfections
In the previous two chapters we have considered structures of ideal
crystals and also structures of sorne noncrystalline glasses. There are
many properties that are markedly dependent on small deviations from
ideal structures, and we can best approach these structure-sensitive
properties on the basis of departures from the ideal structures.
.
If we consider a perfect crystal as one with a completely ordered
structure having its atoms at rest (except for zero-point oscillation at the
absolute zero temperature) and with the electrons distributed in the
Iowest-energy states, there are several types of deviations or imperfections which may occur. The first is increased amplitude of vibration of the
atoms about their equilibrium rest positions as the temperature is increased. (These elastic vibrations are nearly harmonic, since the forces
between atoms nearly obey Hooke's law; wavelike solutions for the
motions of the atoms can be quantized and amounts of energy hv, called
phonons, associated with unit quantum excitation of the elastic vibration.
The relationship between phonons and the vibrational frequency is the
same as that between light photons and the vibrationaI frequency of Iight
waves.) Imperfections also occur in the electronic energy Ievels; electrons
may be excited into higher energy Ievels, leaving vacant positions in the
normally filled electronic energy-Ievel bands, called electro n holes. If the
excited electron remains closely associated with the electron hole, the
electron-electron-hole pair is called an exciton, which also may be Iooked
on as an excited state of an atom or ion. Finally there are a number of
atomic defects, including substitution of a wrong atom or a foreign atom
for a normal one, inierstitial atoms, vacant atom sites, and line imperfections called dislocations. Finally we might also consider the crystal
surfaces or boundaries between crystals as imperfections, but these a~e
discussed separately in the next chapter.
At the outset we must admit that there are a large number of
combinations, permutations, and interactions among solutes, atomic
defects, electronic defects, disIocations, and surfaces. In the present
125
126
INTRODUCTION TO CERAMICS
_._.
._._._e
80_e
8_0e
_._._._.
_._._._.
STRUCTURAL IMPERFECTIONS
127
._08.8 0 8
lb)
(a)
Fig. 4.1. (a) Frenkel disorder. Ion leaving normal site forms interstitial ion and leaves a
vacancy.
C~em.,
(e)
(d)
Fg. 4.1. (eDil/d.) (b) Schottky disorder. Equal numbers of anion and caton vacances
lXCUr. le) Substitutional and (d) interstitial solid solutions.
128
STRUCTURAL IMPERFECTIONS
INTRODUCTION TO CERAMICS
129
is loealized at the vacant site, as would normally be the case for NaCl, we
lftTite V ~I. In sorne materials less strongly ionic than NaCI these excess or
missing electrons, e' or h', may not remain localized at the vacant site
he separation being represented by the reactions
'
V(..a
V~I =
V Na + e'
(4.1)
V C1 + h'
(4.2)
By scparating the notation for atoms from the notation for electric charge,
we avoid the prospect of unintentionally making a priori assumptions
bout the nature of the defects.
With each of the other defect symbols- V M, V x, Mi, Mx, (VM V x )-an
ctfcetive charge relative to the host lattice is also possible. Thus Zn'
would. indicate a Zn2+ ion at an interstitial site which is normally
unoeeupied and without an effective change. Substituting a divalent Ca 2 +
ion for monovalent Na+ on a sodium site gives a local electronic structiue
augmented by one extra positive charge and is represented as Car:,u. Note
Ihat the superscripts + and - are used to indicate real charged ions,
whereas the superscripts . and indicate effective positive and negative
iCharges with respect to the host lattice. Other possibilities arise from
nonstoichiometry. In Fea, for example, it is possible to have Fe3 + ion s in
addition to the normal Fe2+ ions. In this case, the Fe 3 + ions are indicated
as Fei,c.
I
.4,2
M~N::O::~::Nx:~:x~::~::s
CaCb(s)~ CaK+
V K+2Cb
(4.3)
For a strongly ionic material such as CaCb, we may further as sume that
the substitutions are fully ionized, which gives us an alternate and more
realistic solution process:
CaCb(s) ~ Ca( + V ~ + 2CI CI
(4.4)
which also conserves electrical neutrality, mass balance, and site relation.
So also a third possibility, the formation of charged Ca2 + interstitials,
chlorine ions on chlorine sites, and potassium ion vacancies, for which we
write
CaCb(s)~Ca;' +2V~+2Cb
(4.5)
which also conserves electrical neutrality, mass balance, and site relation.. '
Deciding among these and other possibilities is a matter for defect
chemistry and is the main subject of the following sections.
STRUCTURAL IMPERFECTIONS
131
(4.6)
INTRODUCTION TO CERAMICS
132
133
STRUCTURAL IMPERFECTIONS
3000,---,----.,.----,-----,-----,
3000,--,----,----;----...-----.
G
~
(a)
.3
~ 2000
E
Q)
(a)
.3
~
Q)
n.
/-
Q)
/-
1500
Periclase SS
and
spinel
1500
1.0
MgO
NO
Mole (radian NO
Spinel
and
corundum
1000 ~-~~-~~-~.l---.l--.-.....J
O
0.2
0.4
0.6
0.8
1.0
MgO
AI203
Mole (raction AI203
Liquid
(!J)
Liquid
>.
Q)
(!J)
Salid solution
Q)
Q)
Q)
MgO
a
e
NO
Mole (radian NO
Fig.4.2. (a) Phase diagram of MgO-NiO. (h) Schematic representation of free-energycompositioll diagrall1 of MgO-NiO systcm for T < 2000C.
0.2
0.6
0.8
MgO
Mole (raction AI 20 3
~quilibrium
.L =
Fig.4.3. (a) Phase diagram of the MgO-Al,O, system. (b) Sche~~tic representalions of
hcc-cncrgy-coll1position diagrall1 of MgO-AI 2 0, for T = 1750C.
shown in Figs. 4.2 and 4.3 represent this kind of substitution. For
cxample, crystals of magnesium oxide frequentIy contain appreciable
2
amounts of NiO or FeO with a random distribution of NZ+ or Fe + ions
rcplacing Mg2+ in the crystals so that the final composition of the crystal
can be read Mg,_. Ni. O, as shown in the phase diagram in Fig. 4.2. A
similar series of solid solutions exists in the system AhOJ-Cr20J (rubies
are 0.5 to 2% CrzOJ in AlzO J), ThO:-U02, albite-anorthite, and many of
the spinels. In sorne systems there is a complete series of solid solutions
STRUCTURAL IMPERFECTIONS
134
135
INTRODUCTION TO CERAMICS
formed between end members (Fig. 4.2). However, in most systems only a
limited number of foreign atoms can be added to the substitutional solid
solution (Fig. 4.3); an excess aboye the solubility limit at a given
temperature resuIts in the formation of a second phase.. .
There are several factors determining the extent of substltutIOn that can
take place in solid solutions, and a number of rules expressing these
factors have been devised. These rules reflect variations in the free
energy, which is made up of several terms. Since the free energy is a
function of temperature, a series of free-energy vs. composition curves
for each temperature can be drawn similar to the ones shown in Figs. 4.2
and 4.3. Loweringof the free energy resulting from an increase in entropy
requires that the"re be at least a smaIl solubility of foreign atoms in any
structure. Factors which aIlow extensive substitution are as foIlows.
1. SIZE FACTOR. If the sizes of two ions differ by less than about 15%
conditions are favorable for the formation of substitutional solid solutions. If the relative ion sizes differ by more than 15%, substitution is
generaIly limited and is usuaIly less than a fraction of 1%. This factor is by
far the most important for ionic compounds.
2. VALENCY FACTOR. If the added ion has a valence different from
that of the host ion, substitution is limited. It can occur, as indicated
. below, but other structural changes are also required to maintain overalI
electrical neutrality.
3. CHEMICAL AFFINITY. The greater the chemical reactivity of the
two crystaIline materials, the more restricted is solid solubility, since a
new phase is usuaIly more stable. For oxides this restriction is usuaIly
.
implicit in ractors of ion valency and size.
4. STRUCTURE TYPE. For complete solid solubility the two end
members must have the same type of crystal structure. For example, Tia,
could obviously not form a complete series of solid solutions with SiO,
(see Chapter 2 for descriptions of these structures). This does not,
however, restrict limited solid solution.
'
On the basis of these factors, an estimate of the extent of substitutional
solid solution to be expected can usuaIly be obtained. For oxides, the
major factor s are the relative ion sizes and valencies. AIthough different
ion sizes definitely preclude extensive solid-solution formation, valence
differences can frequently be made up in other ways. For example,
2
extensive solid solution among Mg2+, Af+, and Fe + ions is common in
cIay mineral s having the montmorilIonite structure. The charge deficiency
2
due to replacing trivalent Af+ with divalent Mg2+ or Fe + is made ~p by
exchangeable ions adsorbed on the surface of the smaIl clay partIcIes.
SimilarIy, substitution of the Si4+ ioos by Af+ ions in tetrahedral coordination in kaolinite leads to a charge difference which is' made up by
CaO(s) --'---;
Ca~,
+ 0 0 + Vo
(4.7)
136
INTRODUCTION TO CERAMICS
6.0
5.8
-1"/0
U"
u
::! 5.6
"'"
Q'c
Q'.,
0"Jo.
~/
1600C isotherm in
cubic field (Zr02-CaO)
5.4
5.2
5
10
15
Mole
20
25
% CaO
30
(a)
6.2
6.0
Catio n .
mterstit"
lal f7Jodel
u
u
--- 5.6
Q
DD
5.4
1800C isotherm in
cubic field (ZrOz-CaO)
5.2
15
Mole
20
% CaO
25
30
(b)
Fig.4.4. Change in density on the addition of CaD to ZrD 2 in solid solution quenched from
(a) 1600C and (b) 18aoC. At 16aoC each Ca'" addition is accompanied by the formation of
3 vacant lat~ice site. At 1800C there is apparently a change in defect type with composition.
From A. Dmess and R. Roy, Salid State Cammunicatian, 3, 123 (1%5).
137
139
STRUCTURAL IMPERFECTIONS
INTRODUCTION TO CERAMICS
138
+0.0001.------.-----.----.,------,.-----,
5.10 ,.--,---,---..,.--..,..----,----.
4.20 -
Calculated
additive
Interstitial
model
4.00
'"E
u
-..
5.08
~3.80
gJ,
~5.06
u
u
-..
?:
OJ)
ro
~ 3.60
~
-0.0001
e
.<=
u
z:: 5.04
<J
3.20
_0.00021.O
...1-
~ 5.02 - o
3.40
Calculated for
CaClz ~CaK + V K+ 2CI C1
4l
'ji
Vacancy model
-'-
--'------'--------'
0.0001
Number CaZ+jNumber K+
0.0002
3.00
"
O
CaFz
Anion vacancies
Calculated
Measured
20
40
Mole % YF3
(a)
50
4.98
60
O
YZ0 3
10
12
(a)
3.60 , . - - - - , - - - - - , - - - - - - . - - - - . . , . - - - - ,
:ig.4.?, Ad?itions of (al YF, to CaF2 and (b) ZrO, to Y,O, give rise to the formation of
Inlcrstltlal amons.
3.58
~e 3.56
__
Calculated for
Alz03---2AIMg + V,g + 300
--
--o-
--_..-ti::./
---
main~ain the proper site relation and electrical neutrality. The measured
denslty data are given in Fig. 4.6b and favor Eq. 4.8 (oxygen interstitials)
rather than Eq. 4.9 (yttrium vacancies).
<lJ
4i(
3.54
MgO
2
3
Mole % Alz03
(b)
Fig.4.5. When (a) CaC\, is added to KCl from H. Pick and H. Weber, Z. Physik, 128,
(1950) and (b) AI,O] is added to MgO, vacant cation lattice sites are created. From V.
Stubican and R. Roy, J. Phys. Chem. Solids, 26, 1293 (1965).
solutions to be zeolite > ThO, > TiO, > MgO, and this is found to be the
case.
The addition of ions on interstitial sites requires sorne associated
charge balance to maintain electrical neutrality. This can be' accomplished
by vacancy formation, substitutional solid solution, or changes in the
electronic structure. All occur. For example, when YF 3 or ThF 4 is added
4
to CaF" a solid solution is formed in which Th + or y3+ substitute for Cal<
and at the same time F- ions are placed on the interstitial sites so
electrical neutrality is maintained (see Fig. 4.6a).
Likewise, the addition of ZrO, fo' Y,03 creates oxygen interstitials
-l
Y'O~2
Density increase:
(4.8)
Density decrease:
3ZrO,(s) ~ 3Zry + 60 0 + V~
(4.9)
Frenkel Disorder
140
INTRODUCTION TO CERAMICS
STRUCTURAL IMPERFECTIONS
= ~Go+ Il~g
T~Sc
(4.10)
k In W
(4.11)
For a perfect crystal, the N atoms which are indistinguishable can only be
placed in one manner on the N lattice sites which are distinguishable. The
configurational entropy is
~Sc =
N!
k In N!
~Sc = k
In [
,J [(N _N!,
,J
Il ).ll
N!,
(N-lli).lli.
(4.13)
= 2k[N In N
(4.14)
~G = ~Go+ Il~g -
2kT[ N In (N ~
,J
~= exp (_ ~h)
(4.17)
2kT
The added entropy ~s results mainIy from lattice strains and accompanying changes in vibrational frequencies resulting from the introduction of
Ihe defect. There is less than full agreement on theoretical estimates, and
experimental observations indicate that although values of exp (~s /2k)
4
between 10 and 100 are most common, values as small as 10- and as large
4
as 10 have been reported. That is, estimates of the absolute values of
defect concentrations are subject to much uncertainty. In contrast, the
relative change in defect concentration with temperature, and therefore
u.h, is much more amenable to measurement.
.
Silver bromide has been well studied and forms Frenkel defects on the
cation sublattice at moderate temperatures:
(4.18)
+ 11 In
(N,~ 11) J
(4.15)
(a~G)
or since [V ~gJ
~;)
(4.19)
. = exp (~g)
- 2kT
(4.20)
[Ag,J
(4.12)
k In 1 = O
141
(interstitial ion)
AgAg + Vi = Ag;
+ V ~g
(4.21)
= [Ag;][ V ~g]
(4.22)
[Vi ][AgAg]
[Agi][ V ~.] = K F
or
[Ag] =
v'K
(4.23)
STRUCTURAL IMPERFECTIONS
INTRODUCTION TO CERAMICS
142
0 0 + Vi
Table 4.1.
[!:1SJ
n/N
n/N
n/N
n/N
n/N
n/N
n/N
n/N
at
at
at
at
at
at
at
at
100 e
500 e
800 e
1000 e
1200 e
1500 e
1800 e
2000 e
0
0
0
0
0
0
0
I eVo
2x
6x
4x
1x
2x
4x
6x
8x
2eY
10-7
10-4
10- 3
10-2
10-2
10- 2
10- 2
10-2
3X
3X
2X
1X
4X
1X
4X
6X
10- 14
10-7
IO- l
10-4
10-4
10-4
10- 3
10- 3
4eY
(!:1/ )
10- 27
1 X 10- 13
4 X 10-10
1 x 10-"
1 X 10-7
2 X 10-6
1 X IO- l
4 X IO- l
I
6eY
3X
3X
8X
1X
5X
3X
5X
2X
10- 41
10- 20
IO- Il
10- 12
10- 11
10-9
lO-K
10-7
8eY
1X
8X
2X
1X
2X
4X
2X
1x
IO- l'
10-27
10- 19
10- 16
10- 19
10- 12
lO-ID
10-'
4.5
(4.24)
Schottky Disorder
o1 eY = 23.05 kcal/mole.
Although the configurational entropy change for forming Frenkel
defects can be ca1culated fram statistical mechanics, the energy change in
putting an atom into an interstitial position depends to a great extent on
the structure and ion characteristics, as discussed in the last section.
Ca1culation of this energy is difficult because there is a large correction
term required for the ion polarizabilities, making ca1culations for alkali
halides difficult aQd for oxides nearly impossible. An example of such a
ca1culation is discussed in the next section.
For alkali halide crystals with a sodium chloride structure the energy
required to form an interstitial ion plus a vacancy is of the order of 7 to
8 e V, so that they do not occur in measurable numbers. For crystals with
the f1uorite structure there is a large interstitial position in the structure,
the amount of energy necessary for forming interstitials is lower, !lh =
(~:)
= O;' + V~
Nn = e~~ [!lg
- 2kT = exp 2k exp [!:1h
- 2kT =exp - 2kT
Defect
eoncentration
143
;; = exp ( -
(4.25)
!lh e le = 2.12 eV
!lh obs
= 2.02 -2.19 eV
1
.......
.
144
INTRODUCTION TO CERAMICS
STRUCTURAL IMPERFECTIONS
145
V!:tg +
V~'
+ Mgsur! + Osur!
(4.26)
Since magnesium ions and oxygen ions on the surface form a layer over
other ions previously located at the surface, this equation is equivalent to
the usual form of the Schottky equation:
(4.27)
and affects only the kinetics, not the equilibrium state.
As is true for Frenkel defects, it is the product of the vacancy
concentrations that is fixed by the Schottky equilibrium. From Eq. 4.27,
(4.28)
Cornpound
AgBr
BeO
MgO
NaCl
LiF
CaO
CaF,
UO,
Reaction
AgAg --:>
nulI?
null?
nulI?
nulI?
null?
Fe?
Cae" ?
null?
Oo?
Uu ?
null?
Ag; + V~g
V;;,+ V~
V Mg + V '
V;',,+ V el
VL+ Vi,
vg" + V~
Vi,+ F'
Vi!" + Ca;'
vg" + 2 Vi,
Energy of
Forrnation,
ilh (eV)
1.1
~6
V"+U;'"
-6
2.2-2.4
2.4-2.7
-6
2.3-2.8
-7
-5.5
3.0
-9.5
V"+2V~'
~6.4
V~'+O';
Preexponential Terrn =
exp (ils /2k)
30-1500
?
?
5-50
\00-500
?
4
10
?
?
?
?
?
146
INTRODUCTION TO CERAMICS
STRUCTURAL IMPERFECTIONS
Ro
-2: 2:-
Wo
S=--=--
1
1--
1
1--
(4.29)
W"
Wf3
(ED)
(4.30)
(4.31)
*Rev.
147
148
INTRODUCTION TO CERAMICS
STRUCTURAL IMPERFECTIONS
149
0.0.0.0.
.0.0.0.0
0.0.0.0.
.0.0.0.0
000.0.0.
.0.0.0.0
(-t:.gvp)_z
kT
. 0 0.0
0.0.0 0
.00.0.0.
' ][V']
[V Na
CI = exp
and
~Tc:__~
.Temperature
(t:.svp)
k
exp
(-:-t:.hvp)
kT
(4.33)
0.0.0.00
.0.0.00.
_ _ _ _~--?- 0 00.0.
OL-
exp
Association of Defects
,.
[(V Na V CI)]
Z exp
(t:.S
T s) exp (-t:.h.,)
kT
(t:.s.,)
T exp (t:.SVr
k
exp
(t:.hs kT
+ t:.h"r
(4.34)
(4.35)
= qqj
- Ah
L1
vI'
(4.36)
KR
where qqj are the effective charges (electronic charge x valence), K is the
static dielectric constant, and R is the separation between defects. This
relationship is clearly very approximate, but it gives about the right values
and leads to useful insights. For sodium chloride the cation-anion
separation is 2.82 , the dielectric constant is 5.62 such that the energy
required to separate a vacancy pair is
= (4.8 x
_ Ah
L1
VI'
where 4.8 x 10-10 esu is the electronic charge. A more precise calculation*
gives a somewhat lower value than this, 0.6 eVo For the combination of
two vacant sites to form a vacancy pair it is a reasonable assumption,
supported by some experimental data, that' the preexponential term,
exp (t:.svr> /k) is near unity.
For oxide materials, in which vacancies have larger effective charges,
the energy gained by the formation of vacancy pairs is larger, as
illustrated in Table 4.3. Hcnce vacancy pairs in ceramic oxides should be
more important than for the better-studied alkali halides. In Fig. 4.8 we
have calculated on a speculative basis the expected concentrations of
*Fumi and Tasi, op. cit.
INTRODUCTION TO CERAMICS
150
Table 4.3.
STRUCTURAL IMPERFECTIONS
151
-4
-6
E -8
[':
NaCI
V~.-
VCI
Caa - V N
CaF,
F'- Vio
Yc- V~ .YCa - V~a - Y Ca
8.43
MgO
9.8
V~.-
Vo'
Fe",. - V~.
Fe~t. - V ~;. - Fe.,.
(l)
2.82
3.99
0.9
0.6
2.74
3.86
3.86
0.6
0.9
0.4
2.11
2.98
2.98
2.8
2.8
1.0
0.5
2.09
2.95
2.95
2.95
2.3
0.8
0.4
0.4
2.09
0.5
::!o
V~-
V~-
NiLi~-
Vo'
Ni
V~-Ni
Ni
DO,
~
-12
u
ro
>
Ql\
..ce -14
-16
-18
(4.38)
[V ~.][Ca;'.]
=Z
exp
_'__
1.0
1000/1' ("K)
_'__
__'__
1.4
___'_=_
1.8
0.6
Fig. 4.8. Calculated (for NaCI) and estimated (for MgO) individual and associated defect
concentrations for samples containing 1 ppm aliovalent solute.
CaCh(s)
L.--:.-..l-_-L_---l---l~'-_
0.2
-15
Vo'
-10
12.0
NiO
o'r-
5.62
(Ilga)
= Z exp (Ilsa) exp (-Illla) = Z exp (- Ilh a)
kTk
kT
kT
(4.40)
V~.
+ 2CIe,
CaCh(ppt)
( Ilg pp, )
kT
[V ~.][Ca.][Clor= exp -
or
ex
, ex exp ( + Ilh
[v NU]
2kT
(Ilh pp, )
exp - kT
pp , )
(4.41)
(4.42)
(4.43)
152
INTRODUCTION TO CERAMICS
STRUCTURAL IMPERFECTIONS
Similarly, from Fig. 4.3 we see that the solubility of aluminum oxide in
MgO decreases from almost 10% at 2000C to less than 0.1 % at 1500C,
corresponding to a heat of solution of about 3 eVo For the precipitation
reaction we can write
MgMg + 2AIMg + V ~g + 40 0 :;;:=: MgAh04(Ppt)
[V ~g][AIMg]2 c>: exp ( +
since
[V"]Mg
[AI~g]
t:.:.t)
= 2[ V r:;g]
kT
(4.44)
(4.45)
(1)"3
4: exp (t:.h
+ 3kT
,)
(4.47)
such that the defect concentration in the crystal is approximately determined by the heat of precipitation as defined by these reactions. Since the
total solubility also includes defect associates, t:.h pPI given in Eqs. 4.43 and
4.47 is not equal to the negative of the heat of solution..
4.8
~:f'~~
~onductlon band m
(4.46)
pp
c>:
153
Electronic Structure
In our ideal crystal, in addition to aIl atoms being on the right sites with
all sites filled, the electrons should be in the lowest-energy configuration.
Because of the Pauli exclusion principie, the electron energy leveis are
limited to a number of energy bands up to sorne maxirnurn cutoff energy at
OOK which is known as the Fermi energy E(O). At higher temperatures
thermal excitation gives an equilibrium distribution in sorne higher energy
states so that there is a distribution about the Ferrni level E(T) which is
the energy for which the probability of finding an electron is equal to
one-halL Only a small fraction of the total electron energy states are
affected by this thermal energy, depending on the electron energy band
scheme.
The different temperature effects observed for metals, semiconductors,
and insulators are related to the electronic energy band levels (Fig. 4.9). In
metals, these bands overlap so that there is no barrier to excite electrons
to higher energy states. In semiconductors and insulators a completely
fiIled energy band is separated from a completely empty conduction band
of higher electron energy states by a band gap of forbidden energy levels.
'In intrinsic semiconductors the energy difference between the fiIled and
empty bands is not Iarge compared with the thermal energy, so that a few
electrons are thermaIly excited into the conduction band, Ieaving empty
electron positions (electron holes) in the normaIly fiIled bando In perfect
insulators the gap between bands is so large that thermal excitation is
insufficient to change the electron energy states"and at aIl temperatures
Metal
Intrinsic semiconductor
Insulator
Fig.4.9. Elcctron cncrgy band Icvcls for mctals with partly fillcd conduction band
'
inlrinsic scmiconduclors wilh a narrow band gap, and insulalors wilh a high valuc for E..
lhe conduction band is completely devoid of electrons and the next lower
band of energy is completely fuIl, with no vacant states.
In an intrinsic semiconductor, each electron whose energy is increased
so that it goes into the conduction band leaves behind an electron hole so
that the number of holes equals the number of electrons, p = n. The
nomenclature usuaIly employed is to indicate the positive electron-hole
concentration by p, t.hat is, p = [h .], and the negative excess electron
concentration by n, that is, n = [e']. In this case the Fermi level E is
ha1fway between the upper limit of the fiIled band and the lower level of
the conduction bando
The concentrations of the intrinsic electronic defects can be calculated
in a manner analogous to that described for Frenkel and Schottky defect
concentrations. In this calculation the thermal randomization of electrons
is related to the probability of a valence electron in the fuIl band having
enough energy to jump across the energy gap Eg iJlto the conduction
bando Because of the Pauli exclusion principie, Fermi statistics are
required to calculate the distribution. The concentration of free electrons
IS
1
_
1 + exp [(Be - E )/kT]
Nc
27rm *kTJ3/2
h;
=
1Q19/ cm 3
at T = 300 0K
(4.48)
L
is the
(4.49)
Ee is the energy level at the bottom of the conduction band, and E is the
154
INTRODUCTION TO CERAMICS
Fermi energy, as illustrated in Fig. 4.9. The Fermi energy represents the
chemical potential of the electron and at OOK is at the center of the band
gap.
A similar relationship holds for electron holes in the valence band, and
when the concentration of electrons and electron holes is small, these
expressions reduce to
n = [e'] =
)J
(4.50)
[(E Ev)]
(4.51)
~ = exp [- (Ee
Ne
np
P = [h '] =-=exp-
Nv
- Ef
kT
f -
kT
I1
(4.52)
The product of the electron concentration per cubic centimeter times the
hole concentration per cubic centimeter is given by
l.
p -
,8
-6
(4.53)
by a",um;og lhal lhe eleelmo i, bouod to lhe defeet io a way ,imila' to the
Table 4.4.
155
STRUCTURAL IMPERFECTIONS
Crystal
E. (eV)
KCl
NaCI
CaF,
UO,
NO
Ab03
MgO
SiO,
AgBr
CdS*
CdO*
ZnO*
Ga,03
LiF
Fe,03*
Si
7
7.3
10
5.2
4.2
7.4
8
8
2.8
2.8
2.1
3.2
4.6
12
3.1
1.1
Room Temp
10- 40
10- 43
10-66
10-"
lO-l.
1010- 49
10-49
44
10-5
10-5
20
10-'
10-'0
1000 K
0
20
4
10-
106
10'
2.0
0.01
0.01
10'2
10"
10 13
150
70
la"
10 14
101l
10-'
10 7
10-"
10-7
10'0
Melting
Point
la'
la"
10 13
la"
10"
10'
la
la"
la'
la"
la"
10'6
10"
Temp ("K)
1049
1074
1633
3150
1980
2302
3173
1943
705
1773
1750
1750
2000
1143
1733
1693
'Most of the data are based on the optical band gap, which may be larger than the
electronic band gap.
Sublimes or decomposes.
13.6(:~)(;r eV
(4.54)
where z is the ionization state of the defect. For the alkali halides m ~ is
about l/2m and the dielectric constant is about 5, so that the energy
required to ionize a sodium or chlorine atom vacancy in N aCI or to excite
an electron from a neutral calcium solute atom is estimated as about
0.3 eVo If we as sume that the excess electron is located at the nearestneighbor distance, we can calculate that the energy of ionizatiori as
calculated for ion associates (Eq. 4.36) is
E
= {J,{J2
KR
STRUCTURAL IMPERFECTIONS
INTRODUCTION TO CERAMICS
156
. [6.G.,.n]
(E. ----y =exp [6.G.,.i
- kT +
[V,,;][VCI]=exp
~
ED~2eV
.i.
~8eV
V.O
, 45''1 :~ -
En-E,
EA
R;:
+Mg
.-L- K
0.5 eV Mg
1.5 eV
Filled band (O 2p 6)
(b) MgO
Fig.4.10.
M.
EA - ED)] (4.55)
kT
6.4eV]
=exp [ ----zy
and
G,. i]
rV ' ][ V . ] = exp [6.kT
K
el
2.2eV]
=exp [ ----zy
That is, for the pure material the ratio of unionized to ionized vacancies is
given by
(4.56)
157
Nonstoichiometric Solids
INTRODUCTION TO CERAMICS
158
Table 4.5.
Composition Atom% Fe
Feo. 91 O
Feo.92O
Feo.93 O
Feo.94s O
STRUCTURAL IMPERFECTIONS
47.68
47.85
48.23
48.65
Density
(g/cm')
4.290
4.293
4.301
4.310
5.613
5.624
5.658
5.728
2FeFe + ~02(g)
= 2Fe~c + 0 0 + V~c
~02(g) = 0
(4.58)
V;~c + 2h'
(4.59)
(4.60)
~ 02(g) = 0 + V ~o + 2h .
0
(4.61)
Po, 1/2
(4.62)
2Th + 0 0
159
Zn(g)
= Zni + e'
K = [Zni][e']
P Zn
(4.57)
is equivalent to
(4.64)
(4.65)
(4.66)
.......-------160
INTRODUCTION TO CERAMICS
(4.67)
(4,.68)
P zn (g)1/3 ex P O,-1/6
ex [e'] ex
(4.69)
The correct model choice requires experimental data. Since the electrical
conductivity is proportional to the concentration of free electrons and
therefore to the concentration of charged zinc interstitials, the electrical.
conductivity data in Fig. 4.11 support ou~ choice of singly charged zinc
interstitials (Eqs. 4.64 to 4.67) as the actual defect mechanism.
- 2 . l l - - ' -_ _~_ _~_ _,---_ _- ,_ _--,
~02(g) + V~
-2.3
x~
.!2
-2.5
x~~
........... x
'~x
- 2.7 ,7----;:';;-----::":-----::7---f:----:l-:----=:~
0.6
1.0
lA
1.8
2.2
2.6
3.0
log Po, (mm)
So far we have only considered the major species present over a limitcd
range of stoichiometry. For a more complete description of the defect
structure it is necessary to write down all the equilibria expressions
involving interactions among vacancies, interstitials, electron energy
levels, and chemical composition, including the influence of solutes and
impurities, and solve this set of equations together with relations expressing electrical-charge balance, site balance, and mass balance. In an
approximate method proposed by Brouwer* we can write the mass-action
*Philips
(4.70)
+ 2e'
K,
(4.71)
[e'][I1'] = K
(4.72)
[V~'][e']2Po,'/2=
null=e'+I1'
[Oml1']2
P
O,
1/2
=K2
(4.73)
Actually only three of these four equations are required, since the two
representations of the oxygen addition are equivalent; that is, K K2 =
K;2K~. The neutrality equation is
x~
OD
K',
[OmV~'] =
V~
~02(g) = 0';+211'
b
161
STRUCTURAL IMPERFECTIONS
2[0';) + [e']
= 2[V~']
+ [11 '] .
(4.74)
but if the energy gap is such that the concentration of electronic defects at
the stoichiometric composition is substantially greater than that of
Frenkel defects, we can replace this representation with the simpler
requirement that n = p. When the concentration of electrons is fixed, the
oxygen vacancy concentration is proportional to P O ,-1/2 according to Eq.
4.71. Similarly with the electron-hole concentration nxed, the oxygen
interstitial concentration is proportional to P O ,+1/2; at the stoichiometric
composition the oxygen interstitial and oxygen vacancy concentrations
are equa!.
At a sufficiently high oxygen pressure the concentration of oxygen
interstitials increases to a point at which the neutrality conditi~n can be
approximated by [O';) = 1/2p. At a sufficiently low oxygen pressure the
concentration of oxygen vacancies with a positive effective charge
increases to a point at which the neutrality condition can be approximated
by [V~'] = 1/2n.
An alternate possibility occurs when the concentration of Frenkel
defects is substantially greater than the concentration of intrinsic elec-
162
INTRODUCTION TO CERAMICS
STRUCTURAL IMPERFECTIONS
NeU!fality condilion
(Va'j
= in
Neulralily condition
n=p
~np-1/6
.~'
1V,,'j
"
n
~
~
~7/
/'
""
Va'/=i n
IVa' = Ion
l0i! = ip
~nC(p-ll'
...
l
n=p
""
lVa'l~
"
'o
~
""o
""o
pcepI/6_///
IVo'j=IO1
l0i!
"'"
'
/'~/
-Ion
IV~)'I
/,1~=p
//
'~
-;:::-P P021/~
163
~,,
Ion-
logPol
Neutrality condition
->-
la)
2[V
O = [e']
[V O] =
[V;;]
[he] = 2[V;;1
Fig.4.12.
Schematic representation of concentration of oxygen point defects and electronic defects as a function of oxygen pressure in an oxide which, depending on the partial
pressure of oxygen, may have an excess or deficit of oxygen. In (a) K > K; in (h) K'; > K
(reference 9).
K'"
s
tronic defects; that is, f1g ~ < E. The relative defect concentrations as a
function of oxygen pressure are illustrated in Fig. 4.12.
Relative to the actual situation existing in real ceramic materials, Fig.
4.12 has been simplified by ignoring the presence of associates and the
infiuence of impurities, which are often decisive. For an oxide MO in
which Schottky equilibrium is predominant for the pure material, we have
shown in Fig. 4.13 a schematic representation of the substantial changes
which resuit from the introduction of impurities. It will be well worth
whi1e for the reader to apply our earlier discussion to the careful
interpretation of Figs. 4.12 and 4.13. Aithough these Brouwer diagrams
clearly indicate the strong infiuence of nonstoichiometry and the expected
oxygen pressure dependence of the defect structure, we should warn
again that they are largely schematic; precise values for all the necessary
equilibrium constants are not available for any oxide system.
[VOO]
[VM1, [h 0J oc Po"",
4.10 - DisIocations
AII the imperfections we have considered thus far are point defects.
Another kind of imperfection present in real crystals is the line defect
called a dislocation. These are unique in that they are never present as
equilibrium imperfections for which the concentration can be calculated
Ifi\&. ~.J3.
~n~,urc for (a) a pure oxide which forms predominantly Schottky ddccts at the
'lI.Khiometric composition.
164
INTRODUCTION TO CERAMICS
1\
K~
s f - -__-f-r--.~_t_---~-_7''----_t_----
c::: y
O 0\0 O
\\
O O O
O O O/ O 10 O O
O /0
O' O
O O
,O
O O
\
Electrical neutrality conditions
O O
(a)
lag
Po; ------
Fig. 4.13 (conld.) (h) An oxide which forms Schottky defects but contains cation impuritic5
> K,'" [modified from (reference 8)].
[F.~]
region. The boundary between the slip and unslipped parts of a crystal is
caBed the dislocation line. The dislocation line can be perpendicular to the
direction of slip, an edge dislocation, orparallel to the direction of slip, a
screw dislocation. The structure of an edge dislocation is equivalent to
the insertion of an extra plane of atoms into the crystal. This can be
iIIustrated by means of a soap-bubble raft (Fig. 4.15).
A characteristic of the dislocation is the Burgers vector b, which is a
unit slip distance for the dislocation and is always parallel to the direction
of slip. The Burgers vector can be determined by carrying out a circuil
count of atoms on latticepositions around the dislocation, as iIIustrated
for the two dislocations in Fig. 4.16. If we start at a point A and count a
given number of lattice distances in one direction and then another
number of lattice distances in another direction, continuing to make a
complete circuit, we end up at the starting point for a perfect lattice. If
there is a dislocation present, we end up at a different site. The vector
between the starting point and the end point of this kind of circuit is the
Burgers vector. For an edge dislocation the Burgers vector is always
(b)
(h)
165
166
INTRODUCTION TO CERAMICS
STRUCTURAL IMPERFECTIONS
167
Fig. 4.16. Combinaton edge and screw dislocation. Burgers vector b shown for pure screw
and for pure edge. Dislocaton line connectng .these is shown.
Fig. 4.15.
INTRODUCTlON TO CERAMICS
STRUCTURAL IMPERFECTlONS
169
Final
Fig. 4.17. X-ray topographs of sapphire samples representing (a) a nade formed by three
basal dislocations. The directions of Burgers vectors are denoted by arrows. (b) Severa!
single helical turns indicated by the arrows. (e) A single spiral turn shown around the Ietter
s. This type of turn is usually larger than single helical turns shown in (b). (d) A dislocation
loop and cusp dislocation formed by closing a single helical turno 2TlO reflection; CuKa
radiation; traces of (2110) planes are vertical; thickness of sample: (a), (b), and (d) 185 Ji m;
(e) 125 JLm. From J. L. Caslavsky and C. P. Gazzara, Philos. Mag., 26,961 (1972).
may contain 10 dislocation lines per square centimeter, and sorne bulk
crystals and crystal whiskers have been prepared nearly free of al!
dislocations; after plastic deformation the concentration of dislocations
increases tremendously, to 10 10 to 10 11 per square centimeter for sorne
heavily deformed metals.
STRUCTURAL IMPERFECTIONS
INTRODUCTION TO CERAMICS
170
[1011
171
Hooke's law do es not hold, and the shear stress cannot be calculated. The
~train energy associated with the strained region is equal to 1/20yz. That
s, the strain energy per unit volume is given by E = 1/20 (b/271"r f If the
distorted cylindrical shell has a thickness dr and a length 1, its volume is
2rrr dr 1, and
dE'
1
and
Fig.4.19. Cross slip in a face-centered cubic crystal. The [101] direction is common to(lJlI
and (1 T1) close-packed planes. A screw dislocation at z is free to glide in either of these plane1>.
Cross slip produces a nonplanar slip surface. In (e) cross slip has caused a dislocatiOOl
generation source at C-D. (Compare with Fig. 4.18.)
1 O (~)2 X 271"rdr =
2
E=
271"r
f.
Ohz dr
r, dE'
ro
Oh 2
r,
-=-In-
471"
ro
471" r
(4.75)
(4.76)
Fig.4.20.
172
INTRODUCTION TO CERAMICS
...-,.......
t--t--
Ir-r--
--r-
..L
:--
r-..L
Metal
'-
Sodium chloride
(a)
1-
\
\
I I 1
--- --Metal
Sodium chloride
(b)
173
In
STRUCTURAL IMPERFECTIONS
175
Suggested Reading
1. F. A. Kroger and V. J. Vink, "Relations between the Coneentrations of
lmperfeetions in Crystalline Solids," So lid State Physics, Vol. 3, F. Seitz and
D. Turnbull, Eds., Aeademie Press, lne., New York, 1956, pp. 307-435.
174
INTRODUCTlON TO CERAMICS
176
Problems
4.1.
4.2.
1
I
Assuming no lattice relaxation around vacancics, what would you predict as the p(~
and T dependence of the density of (a) Fc,_.O, (b) UO,.", and (e) Zn,+xO.
Estimate the conccntration of associates at 1000C in ZrO, doped with 12 mio CaD
(K - 30).
4.3.
4.4.
4.5.
4.6.
4.7.
4.8.
4.9.
4.10.
4.11.
AI,O, will form a limited solid solution in MgO. At the eutcctic tcmperature (l995"C),
approximately 18 wt% of AI,O, s soluble in MgO. The unit-cell dimensions of MgO
decrease. Predict the change in density on the basis of (a) interstitial AIJ+ ions and (b)
substitutional Al'+ ons.
Make atable listing the structural imperfections that occur in crystalline solids. D<J
not consider secondary imperfections that result from the interaction of two or more
basic mperfections such as F centers. In your table make a one-sentence definition ID
that the instructor can evaluate your understanding of thc imperfection. In a third
column designate whether or not the mperfecton s thermodynamcally stablc.
(a) lf two parallel edge dislocations of the same sgn lie on the same slip plane, that
is, their half planes of atoms are parallel and termnate on the same plane
perpendicular to the half planes, would there be a force of attraction or
repulsion between them?
(b) Would this be the result of compressive, tensile, or shear forces?
(e)
If the distance between them increased 10 times, how much would the forceof
interaction decrcase or increase?
(11) If one of the edge dislocations were replaccd by a screw dislocation, describe
the interaction between the two line defects.
Estimate the number of free vacancies, interstitials, and associates in I cm' at SOO'(
of (a) pure AgBr and (b) AgBr + lO-A mio CdBr.
Construct a diagram similar to Fg. 4.8 for the AgBr data in Problem 4.6.
Estimate the electron binding energy for the reaction TT, + e' = Ti+, in rutile, TiO:
(K - 100).
To thc schematic data in Fig. 4.13b add thc curvc for the nonneutral associale
(V ;,P':'). Assuming that cation interstitials form, will (V ;:'P':') associates be largcr in
number than (V;:'M;)?
The common edge dislocation in rock sal! structures is shown in Fig. 4.21. Sketch the
edge dislocation in CaF,.
Dislocations are observed in most simple oxides, and in fact crystals are difficult to
prepare without large concentrations, > IOAlcm'. In more complex oxides, such al
garnets (e.g., yttrium aluminum garnet, Y,AI,OI2' gadolinium gallium gamelo
Gd,Ga,O,,) single crystals are easily grown dislocationfree. Why?
Surfaces,
Interfaces,
and Grain
Boundaries
The surfaces and interfaces between different grains and phases are
mportant in determining many properties and processes. From one point
oC view these may be regarded as two-dimensional imperfections or
departures from the ideal crystal lattice structure. Or the surfaces of a
crystal may equally well be included in defining the ideal crystal structure
for any particular environment. In either case it is desirable to understand
he structure, composition, and properties of the boundaries of a solid or
quid and the interfaces between phases, for they have a strong infiuence
on many mechanical properties, chemical phenomena, and electrical
properties.
5.1 Surface Tension and Surface Energy
(5.1)
177
178
INTRODUCTION TO CERAMICS
Fig.5.1.
dE = T dS - P dV + l' dA + 2:
.Li
dO = - S dT + V dP + l' dA + 2:
dn;
.L;
dn;
(aE)
1'- - aA
(ao)
-aA
(5.2)
(5.31
179
(5Al
(5.5)
s.
V.n, -
P. T.n,
:::tead of lhe
181
(S.IS)
dE = T dS + y dA - P dV + !'J.L dn
(S:6)
where dV is the volume of the interface layer (thickness x dA),. dS. t~e
excess entropy due to the interface, and dn the excess moles of I wlthm
the boundary.
Integrating, without change of composition, we have
E
(S.8)
and
Thus the surface tension of a ftat interface is the exce~s Gi~bs free energy
per unit area. By differentiating Eq. S.7 and companng wlth Eq. S.6, we
have
= - S dT + V dP - !.n dJ.L;
(S.9)
+ v dP -
(S.IO)
!.f; dJ.L
where f; is the excess moles of i per unit area of t?e interface layer and s
and vare the excess entropy and volume per umt area. For changes al
constant temperature and pressure
(S.lla)
dI' = -!.f; dJ.L;
For two components, this becomes
dI'
f 2(1) = -
(S.7)
= TS + yA - PV + !.J.Ln
A dI'
= - f, dJ.Lt - f 2 dJ.L2
(S.11b)
dI'
dI'
dI'
dJ.L2 = - RT d In a2 = - RT d In
C2
(S.16)
The terms dJ.L t and dJ.L2 are not independent but are related through the
Gibbs-Duhem equation
x t dJ.L t + X2 dJ.L2 = O
(S. 12)
where x, and X2 arethe mole fractions of the two components in the phase
being considered. Hence
-dI' =
t
e
';
[f2-~:fIJ dJ.L2
(S.13)
"u
Ul
where f
2(1)
is defined as
2(1)
dJ.L2 = f 2(1)RT d In
C2
(S.14)
B
A
Composition
182
0.0.000.0000
o o o o o o o o
183
INTRODUCTION TO CERAMICS
Table 5.1.
Surface Energy
(oC)
(ergs/cm')
Material
Water (1iquid)
Lead (1iquid)
Copper (1iquid)
Copper (solid)
Silver (1iquid)
Silver (solid)
Platinum (1iquid)
Sodium chloride (1iquid)
N aCI crystal (100)
Sodium sulfate (1iquid)
Sodium phosphate, NaPO, (1iquid)
Sodium silicate (1iquid)
B,O, (1iquid)
FeO (1iquid)
AbO, (1iquid)
AI,O, (solid)
0.20 Na,O-0.80 SiO,
0.13 Na,O-0.13 CaO-0.74 SiO~ (Iiquid)
-. MgO (solid)
TiC (solid)
CaF, crystal (111)
CaCO, crystal (1010)
LiF crystal (100)
72
442
1270
1430
920
1140
1865
114
300
196
209
250
80
585
700
905
380
350
1000
1190
450
230
340
25
350
1120
1080
1000
750
1770
801
25
884
620
1000
900
1420
2080
1850
1350
1350
25
1100
25
25
25
0.000000
0.000.000000
o o o o oo o o o
o o o o o o o o o o
o o o o o o o
ttttt
I
e><
r-i
"" ""
r-i
'-++-'
+ +
"" ""
.S'
Vl
D.
conceptual model for the excess energy at the diffuse interface E,. This is
similar to a regular solution model but applied to the interface. For a
syslem containing components A and B, if the bond energy for A-A
bonds is EAA, for B-B bondsis Eaa, and for A-B bonds is EAa, then the pure
phases are stable if 2EAa > EAA + Eaa. If we define atomic planes parallel to
lhe interface having a composition (atom fraction of A) X p , X,,+I, and so on,
we can first ca\culate the energy of one atomic plane bounded by
neighboring planes of the same composition, that is,
E xp
Xp
)Eaa
+ 2xp (1
- x" )EAa]
Distance, y
(5.17a)
* Ann.
In
is the
184
INTRODUCTION TO CERAMICS
atom density per unit interface area. A similar expression holds for the
Xp+1 planeo The summation of bond energy between the planes of differing
composition Xp and Xp+1 is
E xv-x v + = Z
I
e;)
{XpXp+IEAA + (1 - x p
)(
1 - X/>+I)Eoo
(5.17b)
and the extra energy resulting fram the compositional gradient relative lo
the average homogeneous composition is given by
Es
2Exv-xv+1 -
(Exv + E xv +')
dv
:~
(2EAO - EAA - Eoo) is the interaction energy, the excess surface energy is
ay
(2m) ao v (aC)2
t.P
and v =
given as
= 'Y dA
2
dA = 87Tr dI'
47Tr dI'
t.P dv
(5.18)
Xp~I)2
185
dA
87Tr dI'
(2)
-;:
(5.21)
(5.22)
(5.23)
For the more general shape, when the surface is not spherical, similar
reasoning leads to the result
(5.19)
(5.24)
Es
2)'
P=/f
(5.20)
-----
---------
~=-=-_-i====-=___=-=~-=-=-==_=_-=_:
187
INTRODUCTION TO CERAMICS
186
(S.29)
po
Since the change in volume is dv = 4TTr 2 dr, the radius change for a
ane-mole transfer is dr = V /4TTr 2 , and
In-E-= VI'
po
b.P = y
(~) =
c~s 8) =
pgh
_ Rpgh
Y - 2 cos 8
(S.30)
(5.25)
(S.26)
and the surface energy can be determined from the capillary rise if the
contact angle 8 is known. As will be seen in Chapters 11 and 12, this same
pressure difference leads to expressions for the rate of sinteringand
vitrification during the heat treatment of ceramic bodies and is important
in connection with grain growth phenomena.
Vapor Pressure of a Curved Surface. An important aspect of the
pressure difference across a curved surface is the increase in vapor
pressure or solubility at a point of high surface curvature. The increase in
vapor pressure due to an applied pressure b.P is
Material
Silica glass
(1700C)
'Y = 300 ergs/cm 2
Liquid cobalt
(1450C)
'Y = 1700 el'gs/cm 2
, (S.27)
Liquid water
(25C)
where V is the molar volume, p is the vapor pressure over the curved
surface, and po is the vapor pressure over a tlat surface. Then
P - -VI'
1) - MI'
1)
In
- (1
-+- (1-+po - RT rl r2 - pRT rl r2
(~)
capillary radius is R,
RT
(5.28)
'Y = 72 ergs/cm 2
Salid Ah03
(l850C)
'Y = 905 cl'gs/cm 2
Surface
Diameter
(microns)
Pressure
Difference
(psi)
Helative
Vapor
Pressure
(p/Po)
0.1
1.0
10.0
0.1
1.0
10.0
0.1
1.0
10.0
0.1
1.0
10.0
1750
175
17.5
9750
975
97.5
418
41.8
4.18
5250
525
52.5
1.02
1.002
1.0002
1.02
1.002
1.0002
1.02
1.002
1.0002
1.02
1.002
1.0002
._. __ ._-~_._._---------_
188
_---
----------
...............
........
---------
--
189
INTRODUCTION TO CERAMICS
cation during the firing process. Nonclay materials which are not naturally
fine-grained must be ground or otherwise treated to give them the particle
sizes in the micron range that are necessary for satisfactory firing.
5.3
Grain Boundaries
sin
e e
for small
Gb 2
R
EcJ"c = 47T(l- v) In b + B
(5.32)
where EcJ"c is the energy per unit length. Since R is the distance the
elastic field extends away from the core, it is equal to the dislocation
spacing D. Thus the elastic term of apure tilt boundary is the energy per
unit area E/D
E
Gb 2
+D
Low-angle tilt boundary. From W. T. Read, Dislocatiolls ill Crystals, McGrawHill Book Company, New York, 1953.
Fig.5.?
where D is the dislocation spacing, bthe Burgers vector, and e the angle
of disregistry. The strain energy of a dislocation is the SUffi of the elastic
energy and the core energy (E = E el + E co). In Chapter 4 we calc.ulated
the elastic term, and we add a term for the core energy B
D = E = D47T(l- v) In b
(b)
(a)
(5.31)
Gbe
= 47T(l- v)
In
Be
e+ b
= Eo[A
-In
eje
(5.33)
Gb
Eo=-~---::-
47T(l-V)
47T(l- v)B
Gb2
(5.34>-
A _ 27TB
-Gb2
(5.35)
190
INTRODUCTION TO CERAMICS
,~
0.8
,/
'-
./
./
./
10
~ 0.7
1115
1125
./
1/5
./
,/
>,
::'" 0.6
./
<U
./
./
./
<U
2:- 0.5
ro
e
Ll
::o
0.4
ro
ti,
0.3
o
-o
C::
Q)
>
:;:;
T = 1535 o e
o
0.2
x
;;:;
ro
Qj
o::
S
5
0.1
10
20
30
50
Fig.5.8. Relative grain-boundary energy versus tilt angle for symmetrical (001) tih
boundaries in NiO. From D. W. Readey and R. E. Jech,J. Am. Ceram. Soc., 51, 201 (1968).
Oo ' - _ l - - L . L L . . . L
20
J25ll...Jll..llI..L-........1.l~'---.lL.ll-.L.-LU
O (Oeg)
Fig.5.9. Histogram of fU)), the fraction of twist boundaries at angle O, against O, for MgO
smoke particles collected abo ve hot and rapidly burning magnesium rods. Twist boundaries
corresponding to I! = O are not included. The histogram s drawn for 1/20 ntervals. From P.
Chandhari and 1. W. Matthews, J. Appl. PI1YS., 42, 3063 (1971).
-j
36 o 52'
Fig.5.10.
191
193
+ V ("a
(5.36)
(5.37)
Fig. 5.11. Representation of (a) perfect 36.8 tilt boundary (310) twin in a simple cubic
crystal and grain-boundary dislocations at (b) slightly rotate.d interface and (e) boundary
ledge.
192
194
INTRODUCTION TO CERAMICS
(gv M' gvx) and by the effective charge z and electrostatic potential
- zecP )]
[ V M'] -_ exp [(gV "kT
(5.38)
[_(gV., kT
+zecP )]
(5.39)
[VX'] -- exp
Far from a surface electrical neutrality requires that [V ;t]x = [V ~]x, and
the concentration is given by the total energy of formation
- exp [_l(gv,\,+gV,)]
[V M'] x -[V']
X
2
kT
00
~e
n+
(5040)
19
- - - - - - -'"'-"'--------1
- - - - - - --~-~------_f
~+
<ll
[V M'] - exp
cPx )]
[_(gv,,-ze
kT
(5 Al)
[VX'] - exp
[_(gV' kT
+zecPoo)]
(5042)
00
00
/1
In
es = In [V '] = M
00
gv"
zecPoo
kT + kT
(5.44)
(5043)
with a space charge extending a depth that depends on the dielectric
constant, typicaIly 20 to 100 from the boundary. An estimate for NaCI,
taking gv;., = 0.65 eV and gvx = 1.21 eV gives cPoo = - 0.28 V; parallel (probably incorrect) assumptions for MgO would give cPoo - - 0.7 V. Thus, the
electrostatic potentials being discussed are not trivial. PhysicaIly, this
corresponds (for NaCI, where gv" < gvx) to an excess of cations located
at the boundary giving it a positive charge, together with a space-charge
,region containing an excess of cation vacancies and a de/kit of anion
vacancies, such as illustrated in Fig. 5.12a. As a result, equilibrium
boundaries, even in the purest materials, require vacancy or interstitial
ion equilibration within the crystal.
If a concentration es of aliotropic solute is present, such as CaCI 2 in
NaCI or Ab03 in MgO, additional cation vacancies are formed; for
additions which are large relative to the thermally generated vacancies,
Eq. 5.41 still holds, and
~
.L:---------.
1M
Fig.5.12. Boundary space charge and associated charged defectconcentrations for (a)
pure NaCI and (h) NaCI containing aliovalent solute with a positive effective charge. From
K. L. Kliewer and J. S. Koehler, Phys. Rev., 140, 4A, 1226 (1965).
(5.45)
f
+0.40
+0.30
::::
+0.20
ro
o'"ocero
+0.10
0.00
"O
::J
o
en
-0.10
-0.20
-0.30
197
1200
Fig.5.13. (a) Temperature dependence of boundary charge for NaCI containing .various
concentrations of aliovalent solute; (/ temperature dependen ce of space-c~arge wldth for
NaCl containing various concentrations of aliovalent solute. From K. L. Khewer and 1. S.
Koehler, Phys. Rev., 140, 4A, 1226 (1965).
196
198
INTRODUCTION TO CERAMICS
El)
VI
+ 0"2'!2= O
+ (~) (E 1-.L2
(S.47)
E2)
Lia liT =
and
0"1
(~)
1-.L
These stresses are calculated by setting the total force (equal to the
summation of stress in each phase times the cross-sectional area of each
phase) equal to zero, since the positive and negative force s in the
respective components are in balance. The force might be transferred
through the grain boundary; the force transferred to a single layer through
the grain boundary is given by O",A 1= - 0"2A 2. The total force O",A 1+ 0"2A 2
produces an average boundary shear stress (T uv ), given by
T llV
(S.49)
El - E2
V 2Lia liT
(S.SO)
(u,A,Lv
= :;---:-:'--::-----
(S.S1)
~ \1=J7; ~
EIVI)+(E2V2)
( 1-.L,
1-.L2
(S.48)
V2 = O
199
Lia liTE
1
(S.S2)
(a", - a" ) Li T
(l
(S.S3a)
where m refers to the matrix and p to the particle. The stresses in the
matrix are
(S.S3b)
O"q,q, = 0"00 =
lI/2
(a)
(b)
(e)
Fig. 5.14. Development of boundary stresses in a lamina te (a) at high temperature, (bl
cooled stressfree, and (e) cooled with layers bonded together.
, YjJ~)~J
iiR 3
2r
---3
(S.S3c)
where R is the particle radius and r the distance from the center. For
single phase materials with anisotropic thermal expansions the stresses
near grain boundaries are more complicated and tend to drop rapidly with
distance from the boundary; the maximum stresses are similar in magnitude to those given by Eqs. 5.50 and 5.53 where Lia is the difference
Ibetween the extreme values of the thermal expansiono
These boundary stresses are important in determining many properties
INTRODUCTION TO CERAMICS
200
201
Fig: 5.16, Prec!pitate particles (a) at dislocations in a subboundary in MgO and (b) along
uam boundary In ZrO, + Y,O,. From N. J. Tighe and 1. R. Kreglo, Bull. Am. Ceram. Soco
~9. 188 (1970).
. ,
Fig. 5.15. Photomicrograph of large-grain AbO, showing refiections from separated graio
boundaries (30x, transmittcd light). Courtesy R. L. Coble.
of polycrystalline ceramics. It is commonly found that in samples having
components with difIerent thermal expansion coefficients, such as porcelains, or with a single phase with an anisotropic expansion, such as
aluminum oxide, the stresses are high enough in large-grained samples lo
cause cracking and separation between individual grains. This is illustrated in the photograph of a large-grain sample of aluminum oxide in Fig.
5.15; the reflections from separated grain boundaries show up clearly.
Altl10ugh the stresses are independent of grain size as indicated in Eq.
5.53, spontaneous cracking occurs predominately in large-grain sized
'samples'because the reduction in the internal strain energy is proportional
to the cube of the particle size whereasthe increased surface energy
caused by the fracture is proportional to the square of, the particlt? size.
These separations mean that large-grain corrpositions areweak and in
general have poor physical properties because of the substantial grainboundary stresses.
_,).",
5.6
' , .._.. J ,
Temperature
SOOC
400C
300C
2S0C
10- 3
10- 3
10-3
10-3
7.1
10-'
1.2
lO'
1.3 X lO'
202
INTRODUCTION TO CERAMICS
already distorted sites for which the added strain energy of inserting a
salute atom and accompanying vacancy or interstitial is small, then the
overall free energy of the sample is minimized by preferentially filling
Ihese low-energy sites. If the fractional filling of these special sites is
defined as the grain-boundary concentration el> and the energy difference
of a solute atom at these special sites and in the lattice is E - e, then for
small solute concentrations e
el> =
(l
YP 3
0.06 mole
203
(5.54)
~~
Quenched
2400 r----,---,----,--,-,---,------,_-,-.,.--,
2200
Q = 30 kcal/mole
Mg O 0.12 mole
Quenched
0.0 5 -
=---
~~
t="'"---- -
0'2 1400
~
::J
1 1200
Q)
Cl.
r-
Q)
1-
oO
I
25
50
~o, elchmg 00
1-
I1
25
50
~o elchmg
600
Fig.5.17. Chemical analysis of calcium, yttrium, and magnesium In a solution obtained b\'
successive chemical etchings on ferrites ground down to a fineness comparable with the
average grain size. The ion contentis plotted as a function of the etching percentage of lhe
ferrite powder. From M. Paulus, Materia/s Scence Research, Vol. 3, Plenum Press, N.Y.
p. 31.
In addition to the electrostatic potential there are stress fields associated with boundaries that affect the solute distribution. The heat oC
solution of many solutes in oxide systems is high, partly because of strain
energy and partly because of the energy to form the accompanying
vacancies or interstitials necessary for electrical neutrality, as discussed
in Chapter 4. If some unknown fra.ction of the grain boundary consists oC
400
200
(%)
Fig.5.18. Fraction of low-energy houndary sites occupied by solute shown for different
\<llute concentrations and heats of solution according to Eqn. 5.54.
'Reference 5.
and
5.7
20S
-0-0-0-00-0-0-0-0
-0-0-0-0Fig.5.19.
206
INTRODUCTION TO CERAMICS
that this kind of low-energy surface configuration always results, and this
surface configuration is what is normally measured. Even systems
without a strong oxygen affinity adsorb oxygen on the surface, as shown
for silver in Fig. 5.20. In an atmosphere containing oxygen the surface
energy of solid silver is substantially lowered, corresponding to absorption of a monolayer of oxygen. Similar but more pronounced effects occur
for higher-surface energy-liquid iron, as illustrated in Fig. 5.21. In liquid
iron the addition of oxygen or sulfur forms a monolayer which results in a
strongly reduced surface energy. For the smaller ions, such as carbon and
nitrogen, the effect is small or absent altogether.
Fused silica has a surface energy of about 300 ergs/cm 2 , and the surface
is already dominated by oxygen ions in a way similar to that illustrated in
Fig. 5.19. Consequently the effect of surface additions on the surface
energy of silica is not so strong as that observed for metals. A larger effect
occurs with the addition of silica to liquid oxides having a higher surface
energy, such as iron oxide and calcium oxide. Surface-energy relationships in sorne of these two-component systems are illustrated in Fig. 5.22.
Interfaces in Two-Phase Systems. In the same way that free surfaces
and the boundaries between two grains of the same material haye an
associated energy, interfaces between two phases-solid-solid, liquidliquid, solid-liquid, solid-vapor, liquid-vapor-are characterized by an
interface energy corresponding to the energy necessary to form a unit
area of new interface in the system. This interfacial energy is always less
than the surn of the separate surface energies of the two phases, since
207
1800 .----,....------,~-_,__---,
--'>----'--0-
0-
1600
~ 1400
Q)
>,
~
e
o
1200
.~ 1000 2
Fe-O
Q)
800
Fe-8
::J
Cfl
600
400
0.0005;-~~---;:::-';;-;---____;:'_:__---L----l5
Weight per cent addition
Fig.5.21. Effect of various additions on the surface tension of liquid iron. Frorn F. H.
Halden and W. D. Kingery, J. PIys. Chem., 59, 557 (1955).
700 - - - - - - - - - - - - r - - r - - , - - - - ,
E 500
.!:!.
Vl
Q)
400
e
'Vi
1200,----,----,----,---,.-----,
2 300
Q)
1000
932C
Q)
~ 800
100
'Vi
1; 200
Cfl
.!:!.
Vl
u
ro
600
Q)
ro
't
::J
Cfl
400 -
200
100
10 -1
I
10- 2
10- 3
Oxygen pressure (atm)
Fig. 5.22.
10- 1
10- 5
Fig.5.20. Effect of oxygen pressure on surface energy of solid silver. From F. H. Bullner,
E. R. Funk, and H. Udin, J. Phys. Chem., 56, 657 (1952).
209
INTRODUCTION TO CERAMICS
208
2200
(;' 2000
E
1800
~ 1600
'"e
'"~
ro
1400
1:.
e'"
1200
1000
Table 5.4.
10
0.001
lnterfacial Energies
(OC)
Interface Energy
(ergs/cm')
1000
400
1000
1570
1000
1120
900
900
1131
1200
1300
1725
<700
1440
1770
2300
<25
1370
1040
1500
90
1225
850
1600
Temperature
System
AhOJ( s )-silicate glaze( 1)
AhOJ( s )-Pb(l)
AI,OJ(s)-Ag(l)
AhOJ(s )-Fe(l)
SiO,(glass)-sodium silicate(l)
SiO,(glass)-Cu(l)
Ag(s )-N a,SiOJ(l)
Cu(s)-Na,SiOJ(l)
Cu(s )-Cu,S(l)
TiC(s )-Cu(l)
MgO(s )-Ag(l)
MgO(s )-Fc(l)
Fig.5.23.
1475C.
vacuo the surface oxide layer vaporizes at about 1200 0 e, and the meta11ic
nature of the material becomes apparent.
5.8
INTRODUCTlON TO CERAMICS
210
(b)
(a)
(e)
0
),
Test Temp
(OC)
(100)
(110)
(111 )
1300
1300
1600
1600
1400
106
136
114
59
9
159
141
153
110
17
149
147
144
90
32
l.
211
212
213
INTRODUCTlON TO CERAMICS
J
~~GlaZe
Fig.5.25.
Stoneware
(a)
.body
(b)
Fig. 5.26. (a) Angle of thermal etching and (b) dihedral angle for solid-solid-1iquid
cquilibrium.
4>
brCJ.Y2.e.c
of metal brazes for use with oxides. In one method, active metals such as
titanium or zirconium are added to the metal; these efectively reduce the
interfacial energy by their strong chemical attraction to the oxide and
enhance wetting behavior. In the other method, the use of molybdenum
manganese combinations, a reaction occurs, forming a fluid liquid oxide al
the interface which wets both the solid metal layer and the underlying
oxide ceramic. This gives satisfactory adhesion and allows the formation
of sound metalized coatings which are subsequently wet by metallic
brazes.
Grain-Boundary Configuration. In the same way that a solid-liqud
system reaches an equilibrium configuration determined by the surface
energies, the interface between two solid grains reaches equilibrium afler
a sufficient time at elevated temperatures for atomic mobility or vaporphase material transfer to occur. The equilibrium between the grainboundary energy and the surface energy is as shown in Fig. 5.26a. Al
equilibrium
I'ss = 21'sv cos ~
(5.57)
(5.58)
where 4> is the dihedral angle. For two-phase systems the dihedral angle 4>
depends on the relationship between the interfacial and grain-boundary
energies according to the relation
4> 1 I'ss
cos-=-2
21'SL
(5.59)
If the interfacial energy I'SL is greater than the grain-boundary energy, 4>
is greater than 120 0 and the second phase forms isolated pockets of
material at grain intersections. If the ratio I'sS!I'SL is between 1 and V3, 4>
is between 60 and 1200 , and the second phase partially penetrates along
lhe grain intersections at corners of three grains. If the ratio between I'ss
and I'SL is greater than V3, 4> is less than 60 0 , and the second phase is
slable along any length of grain edge forming triangular prisms at the
inlersections of three grains. When I'SS/I'SL is equal or greater than 2, 4>
equals zero, and at equilibrium the faces of aH the grains are completely
separated by the second phase. These structures are illustrated in Fig.
5.27.
These relationships are important in processes that take place during
firing of powder compacts. If a liquid phase is present, it can be efective
in speeding the densification process only if 4> equals zero so that the
solid grains are separated by a liquid film. This occurs, tor example, with
the addition of a small amount of kaolin or tale to magnesium oxide.
These relationships are also important in determining properties of
resultant compositions. The efect of phase distribution on properties is
almost self-evident. The electrical and thermal conductivity, deformation
214
INTRODUCTlON TO CERAMICS
6. H. Gleiter and B. Chalmers, Progress ill Materials Sciellce, Vol. 16, Pergamon
Press, New York, 1972.
7. H. Hu, Ed., The Natllre alld Behavior of Graill BOlllldaries, Plenum Press,
New York, 1972.
8. P. Chaudhari and J. W. Matthews, Eds., Graill BOlllldaries and Illterfaces
(SlIrface Sciellce, Vol. 31), North-Holland Publishing Company, Amsterdam,
1972.
9. Metal SlIrfaces: Structllre, Ellergetics alld Killetics, ASM, Metals Park, Ohio,
1963.
</>=0
</> = 45
(polished section)
(a)
215
(b)
Problems
_ 5.1.
</> = 90
(e)
</> = 135
(d)
A liquid silicate with surface tension of 500 erg/cm' makes contact with a polycrystalline oxide with an angle 8 = 45 on the surface of the oxide. If mixed with the oxide, it
forms liquid globules at three grain intersections. The average dihedral angle </> is 90.
If we assume the interfacial tension of the oxide-oxide interface, without the silicate
liquid is 1000 dyn, compute the surface tension of the oxide.
</> = 135
(polished section)
(e)
Fig. 5.27.
The surface tension of AI,O, is estimated to be 900 erg/cm", for liquid iron it is
1720 erg/cm" in a vacuum. U nder the same conditions, the interfacial tension (Iiquid
iron-alumina) is about 2300 erg/cm". What is the contact angle? Wil\ liquid iron wet
alu mina? What can be done to lower the contact angle?
The following data are available for the surface tension of iron as a function of
composition:
under stress, and chemical reactivity o a complex mixture all depend no!
only on the properties o the individual phases but also 00 the relative
distribution o the phases.
Suggested Reading
1.
2.
3.
4.
5.
Surface tension
(erg/cm')
Addition
(ppm)
Surface tension
(erg/cm')
1670
1210
795
100 sulfur
1000 sulfur
10,000 sulfur
1710
1710
1710
1710
Addition
(ppm)
10
lOO
1000
10,000
carbon
carbon
carbon
carbon
What informaton can be derived from these data concerning surface excess
quantities? Describe the composition of the surface withregard to these two systems
(Fe-S and Fe-C).
5.4.. Dislocation etch pits measured on the average of 6.87 microns apart on a low-angle
grain boundary. The angle between grains amount to 30 sec of arc by X-ray
diffraction techniques. What is the length of the Burgers vector? Note: 1 sec =
0.00028.
5.5.
216
INTRODUCTION TO CERAMICS
Following polygonization, polishing, and etching, etch pits are observed to be spaced
at 10-micron distances along a line in a crystal of lithium fluoride. The low-angle grain
boundary is observed to move normal to the plane of the boundary under an applied
shear stress. How can this happen? If the Burgers vector is 2.83 A, what is the tilt
angle across the boundary?
5.7. A metal is melted on an AI,O, plate at high temperatures.
(a) If the surface energy of Al,O, is estimated to be 1000 erg/cm', that of the molten
metal is similar and the interfacial energy is estimated to be about 300 ergs/cm',
what wili the contact angle be?
(b) If the liquid had only half the surface energy of AI,O) but the interfacial energy
were twicc the surface tension of AI,O" estimate the contact angle.
(e)
Under conditions described in (a), a cermet is formed by mixing 30% metal
powder with AI,O, and heated aboye the melting point of the metal. Describe
and show with a drawing the type of microstructure expected between the metal
.
and Aba,.
5.6.
Atom
Mobility
In order for microstructure changes or chemical reactions to take place
n condensed phases it is essential that atoms be able to move about in the
crystalline or noncrystalline solid. There are a number of possible
mechanisms by which an atom can move from one position to another in a
crystalline structure. One of these is by the direct exchange of positions
between two atoms, or more probably by a ring mechanism in which a
c10sed circle of atoms rotates. (Direct exchange of only two atoms is not
energetically probable because of the high strain energy necessary to
squeeze the two atoms past one another. This is particularly true in ionic
solids, in which we would never expect the exchange of cations and
anions.) The ring mechanism ilIustrated in Fig. 6.1 b is possible, but it has
not been demonstrated to occur in any actual system. Another process
which is energetically more favorable is the motion of atoms from a
normal position into an adjacent vacant site. As seen in Chapter 4, there
are vacant sites in every crystalline solid at temperatures aboye the
absolute zero. The rate at which atom diffusion can occur by this process
depends on the ease of moving an atom from a normal site to a vacant site
and on the concentrati.on of the vacant sites. Mobility by means of this
vacancy mechanism is probably the most common process giving rise to
atom motion. It is equivalent to the mobility of the va.cancies in the
opposite direction, and occasionally we talk of vacancy diffusion. A third
process that can occur is the motion of atoms on interstitial sites. If atoms
can move from a regular site to an interstitial position, as in the formation
of Frenkel defects, the easy movement of these interstitial atoms through
the lattice is a mechanism o atom movement. High mobility is also a.- _/
characteristic of second-component atoms which are in interstitial solid
solution. A variant of this process is the interstitialcy mechanism in which
an interstitial ion moves from its interstitial site onto a lattice site,
bumping another atom off the lattice site into a new interstitial position.
This kind of process can take place, even though the direct movement
from one interstitial site to anothcr is encrgetically unfavorable. These
217
ATOM MOBILITY
INTRODUCTION TO CERAMICS
218
-0-0-0-0-0-0
0-0-0- -0-0-0-0-0-0-0 O
O~("O - O - O - O - O - O- O - O O - O - O
O-- O O - O - O _-~(c)
_ ~-. .O - O - O - O - O
(b) ~ O __ O
O- - O . - 0--:;0 - ~- O - O - O
(a)
0-0-0-0-0-0(d)
0000000
.00 0000
000000
0000 00
O 00000
0000 00
.0000000
A
AS
S
~~~
. ..0.
0.0
0.0.0.0 00
.00000
0 0.0.0 00
. 0 . .00000
. . 0 . 0 . .0000
000 O
0.0.0.0000
"..--A---.. /
0.0 0.0.0.0.0.
.0.0.0. .0 0.0
0.0.0 0.0.0.
. 0 . .0.0.0 0.0
0.0.0 O. . 0 . 0 .
0.0.0.0.0.0.0
0.0.0. .0.0 00
6.1
ax
Solution
A
"
S
,r-'--.....
Solution
,
final state depends on the rate of diffusion 'of the individual atoms.
Similarly, if a new compound is formed between A and B, continuation of
the reaction requires that material diffuse through the intermediate layer.
The speed of this diffusion process limits the rate of the reaction. In
addition to the rate at which uniformity of composition is attained and
solid-state reactions proceed, many other processes such as refractory
corrosion, sintering, oxidation, and gas permeability are influenced by
diffusion properties.
l=-D~
..0.0.00000
0.0.0.0 00
00000
0.0.0.0. 00
0 00000
00
0.0 00
0.000000
AS
/
219
.0 .00.0 . 0 . 0 .
0 0 0.0. .0
0 00.. 000.
0.00
.000.0.0
0.0 0. .0.0.
.0 00.0.0.00
.0000 00.0.0.0
Fig.6.2. Diffusion processes to fmm a new compound AB m a random solid solution froro
pure starting materials A and B.
1 = -D ac
ax
(6.2)
al dx = - Dac- - a (Dac)
+ax
ax ax
ax
dx
(6.3)
V" 'p
220
INTRODUCTlON TO CERAMICS
ATOM MOBlLITY
r-
d.L, = RT d In c,
I
I
I
I
I
J - _D..E.r:..
[-
ax
I
I
~~
B.
1, = _RTdc.
Ndx'
= J + ~~ dx =
_D~_.I(Dac)dx
Fig. 6.3.
Jz
ax
D, = kTB,
di
al =
ax
_~
ax
(D axaC)
ac _ a
at ax
ac I at
Table 6.1.
so that we arrive at
(6.5)
ac_ D a c
at - ax
(6.6)
v,
force = 1 d.L
N dx
I d.L,
l,= - N dx B,c,
(6.11)
(6.4)
(D axac)
_ B = velocity
(6.10)
and by subtraction
(6.9)
Substituting this expression in Eq. 6.7 and comparing with Eq. 6.1, we find
that the diffusion coefficient is directly proportional to the atomic
mobility:
I
I
I
221
(6.7)
B=
cm/sec =
cm/sec
cm/sec
cm/sec
dynes dyne cm/cm = erg/cm = 10 7 l/cm
B.=
V,
, (1/N)(a.L, fax)
=
B"=~- mole cm
, a.L,/ax 1 sec
= chemical mobility
B'!-~-~
, - afJ / ax - V . sec
=
cm
erg' sec
absolute mobility
electrical mobility
V, = cm/sec
7
.L, = ergs/mole = 10- l/mole
N = Avogadro's number = atoms/mole
x=cm
V,= cm/sec
= l/mole
x=cm
.L,
V, = cm/sec
fJ = V
x=cm
B,=NB',
z, = valence = equiv/mole
F = Faraday const
= 96,500 1IV . equiv
B';= z,FB',
(6.8)
where .L, is the partial molal free energy or che mical potential of i and N
.,is Avogadro's number. If we assume unit activity coefficient for species i,
the change in chemical potential is given by
a.t, = z,pafJ
ax
ax
11=
222
INTRODUCTION TO CERAMICS
ATOM MOBILITY
J --
.!(n,-nz )f -2
_n_u_m_b_e_r_o_f_a-,-,t_o-,-,m.:..::.s
(area)(time)
223
(6.12)
The quantity (nI - nz) can be related to the concentration or a number per
unit volume by noting that nI/A = CI, and nz/A = Cz, and that (CI - cz)/A =
- Be / Bz. Thus the flux is
(6n)
DI = yAZf
D v = yAZf
(6.16)
.2
Fig. 6.4.
(6.17)
One-dimensionaI diffusion.
INTRODUCTION TO CERAMICS
ATOM MOBILITY
224
= - D~ = -Db
ax
Vp; - vp;;
(6.18)
t!.x
C(x,t)
= e [1 - erf
(2Jm)]
e
225
(6.21)
erf (z);
(2Jm)
(6.22)
Let us now consider the long-time solution to Fick's second law, that is,
the case when homogenization tends to completion. This could occur for
diffusion out of a slab of thickness L, with solute being lost from both
faces. If the initial composition is C o and the surface composition is
maintained at es for t > 0, the solution can be reliably approximated to
give the mean concentration within the specimen, Cm:
(6.23)
1.00
C(x,t) - C o = 1- 2_
e - Co
V7T
j,/2VDt e-"
01 uo
(6.19)
dA
I I 0.50
u~
The expression on the right is one minus the error function, l - erf z,
where z = x /2VDt:
C(x,t) - C o =
0.75
e - C o [1 -
erf
0.25
0.5
(2Jm)]
(6.20)
The aboye integral (the error function) often occurs in diffusion and
heat-flow problems. It varies from Oto l for x /2VDtvalues of to about
~
1~
1.5
r-- 1---
~O
2.5
3.0
3.5
4.0
.jj
Fig. 6.5. Penetration curve for unidimensional diffusion into a semi-infinite medium of
uniform initial concentration C o and constant surface concentration c, ; c is the concentration
at x and t.
INTRODUCTION TO CERAMICS
226
~:~~s < 0.8, that is, long times. The change in the mean
concentration with time is shown in Fig. 6.6 for a slab and for other
geometries. The dimensionless parameter VDi/l is used where 1 is the
sphere radius, cylinder radius, or half the slab thickness. For order o
magnitude calculations, we note that exchange or homogenization is
nearly complete (more than 98%) when VDi ~ 1.51 for a slab, VDi = 1.01
for a cylinder, and VDi = 0.751 for a sphere. These approximations allow
a rapid estimate of the extent to which a diffusion-controlled process will
occur under given conditions.
The experimental technique by which most diffusion coefficients are
measured involves the application of a thin film of radioactive material on
the host material. If the quantity el: of a radioactive tracer is diffused into a
semi-infinite rod for a time t, the thin-film solution of Fick's law is
e -- 2Vel:7TDt ex P (-~)
4Dt
Intercept
Sphere
(radlus L) y
/
0.8 0.7
/ ~,
'11 /
0.6
/
/1
0.4
0.3
//
0.2
---
i/
e
Q)
Cylinder
(infinite length,
radius L)
Slab
(infinite width
and length,
thickness 2L)
j/ /
lf7
1.0
0.5
1.5
-vJ5t
L
Fig. 6.6. Fractional saturation of sheet, cylinder, and sphere of uniform initial concentra
tion Ca and constant surface concentration c" with Cm the mean concentration at time t.
-..Fil5i
"
(6.24)
:--
.~
/
/
I I
O. 1
V f-V ~ /V
/
./
0.9
227
ATOM MOBILITY
229
ATOM MOBILITY
228
o o
(e)
(b)
(a)
reaction rate k is thus the product of the frequency term and the
concentration of activated complexes.
For an individual reaction step to form an activated complex, such as
A + B = ABt, assuming unit activity coefficients, K t equals CAB'/CAC B,
and the reaction rate or number of activated complexes which decompose
per unit time is given by
.~. "le,
ReactlOn rate
= VC
AB '
= (vK
)CACB
(6.25)
>-
:o
Q)
(6.26)
eQ)
Q)
Q)
..t
(b)
t
t:J.Ht)
t:J.S
k= vexp ( - RT eXPT
(e)
(d)
Fig.6.8. (a), (b), and (e) are schematic drawings showing the sequence of configurations
i
involved when an atom jumps from one normal site to a neighboring one. (d) shows how the
l
free energy of the entire lattice would vary as the diffusing atom is reversibly moved from:._ - I
configuration (a) lo (b) lo (e).
'
(6.27)
dG = _ 1.- d.t
N dx
N dx
= _ 1
(6.28)
. ;, r,
(6.29)
(6.30)
230
INTRODUCTION TO CERAMICS
231
ATOM MOBILITY
[_
A d.t /dX]
2NkT
= _~
-lJoG'lkT
NkT e
d.t
dx
(6.34)
= velocity
Q)
Q)
and
Q)
Q)
..;:
(6.35)
Distance
Fig. 6.9. Diffusion in a potential gradient tJ..t; tJ.G' is the activation energy and
distance.
de __ D de
J flux -- - It\ 2 ve -!JoG'lkT dx
dx
height:
where
(6.31)
= NkTdde, we have
e
(6.36)
(6.37)
by comparison with Fick's first law. This does not include the geometrical
factor or the probability that the adjacent site is vacant; however,
comparison with Eq. 6.16
(6.38)
_
k nel - k - k b
.t = .to+
the jump
t:..G T
= v
[ (1) (1)]
~T
2: XA
kT
-XA
- exp
= 2 v exp ( - t:..G
kT
XA]
smh [12: kT
).
(6.32)
(~j ~ 1)
nel
XA ]
2kT
(6.33)
232
ATOM MOBILITY
INTRODUCTION TO CERAMICS
Table 6.2.
233
(6.39)
where the preexponential value Do can be separated into more fundamental terms from comparison with Eq. 6.38. The term Q in Eq. 6.39 is
sometimes caIled the experimental activation energy.
The tracer or self diffusion coefficient represents only the random -walk diffusion
process, i.e., no chemical potential gradients:
The lattice diffusion coefficient refers to any diffusion process within the bulk or
lattice of the crystal:
6.3
D,
D=---
Db
The chemical, effective, or interdiffusion coefficient refers to diffusion in a
chemical-potential gradient:
(6.40)
Intrinsic diffusion refers to a process when only native point defects (thermally
created) are the vehiele for transport.
Extrinsic diffusion refers to diffusion via defects not created from thermal energy,
e.g., impurities.
dc/dx
= [XzD, T + D zT Xd ( 1 + ddln1'l)
In XI
(6.41)
The apparent diffusion coefficient ineludes the contributions from several diffusion paths into one net diffusion coefficient:
.
Da
The defect diffusion coefficient refers to the diffusivity of a particular point defect
and usually implies more than just the random motion but also the effects of the
biasing concentration gradient. U sually the vacancy diffusion -coefficient is the
defect diffusivity of interest:
where XI and X z are the mole fractions of the diffusing species (e.g., Ni and
Mg) and 1'1 is the activity coefficient of component 1. For ideal or dilute
.
In XI
1'1 ~ O, and the mter
.
d'ff'
ffi'"
h
solutlOns
the ter m dd In
1 uSlOn coe clent IS Just t e
235
INTRODUCTION TO CERAMICS
ATOM MOBILITY
coefficients, usually written as D = Doe-O'kT. For the purpose of discussion we choose potassium chloride, for which careful measurements have
been made. The analogy of this system to many important ceramic
materials is appropriate, since many oxides also have a close-packed
anion lattice.
'~:::J
Diffusion of potassium ions in potassium chloride occurs by interchange of the potassium ion with cation vacancies. From Chapter 4 we
know that the concentration of vacancies in apure crystal is given by the
Schottky formation energy
[V id = e -!>.G,/2kT
(6.44)
234
15 = (l + Z)D v
(6.43)
Combining the concentration of defects with the motion term (Eq. 6.38),
= 'Y"
ve
(6.45)
(-t1H'-(t1H 12Jl/kT
'
12) = 10 - -o
10+ 1
1
3
.
. . 1) = 'YA. 2 v exp (As
Do(mterstItIa
-k- ) = 10- - 10+
(A: + ~~s).
t
------------------------IIiiilIIo..--IIIIIII-..._..IIII
. . . __
~'_"__......,~~~,;. . . .
ATOM MOBILITY
Table 6.3. Enthalpy and Entropy
Values for Diffusion in KCI
Schottky defect formation:
Enthalpy l::.H,(eV)
Entropy l::.S,/k
Potassium ion migration:
Enthalpy l::.H,+(eV)
Entropy l::.St/k
Chlorine ion migration:
Enthalpy l::.H 2+(eV)
Entropy l::.S2+/k
10- 1
\
\
10
10
2.6
9.6
\
1
10- 2
\
.>:
\
\
Ol)
10- 1
0.7
10-
2.7
10-:1
10-;'
0;--'
E 10-
Ol)
52
10-
10-"
Mi ~ _ O.4eV
2k k
\
\
10- 7 L -
-'
1.0
\
2.0
1000/1'
~ 10- 7
Cl
lV<] = lF~]
10-"
t:.H, _ 1.3eV
-k-
'2k-
52
10-.1
1.0
4.1
10-:1
237
t:.H T
6H
. - - + -s
10- 9
10-10
10- 11
10- 12
10- 13
Substance
l::.H,
(eV)
l::.H'
(eV)
10- 1.1
0.0
2.0
1.0
3.0
100011' (OK)
LiF
LiCl
LiBr
Lil
NaCI
NaBr
KCl
KBr
KI
CsCI
CsBr
Csl
TICl
PbCh
PbBr2
2.34
2.12
1.8
1.34, 1.06
2.30
1.68
2.6
2.37
1.60
1.86
2.0
1.9
1.3
1.56
lA
236
0.70
0.40
0.39
0.38,0.43
0.68
0.80
0.71
0.67
0.72
0.60
0.58
0.58
0.5
Fig. 6.10. Diffusion-temperature plot for KCl with 10- 4 and 10-' ato m fraction divalent
cation impurities. Insert plot shows the variation of the [V~] with temperature.
coefficient is given by
(6.46)
= [Ca{]
From Fig. 6.10, we note that Dol< <;g Do'n, consistent with these relationships.
') {"."(;.~
The brid in the curve in Fig. 6.10 occurs in the region where the
intrinsic defect concentration is comparable with the extrinsic defect
ATOM MOBILITY
INTRODUCTION TO CERAMICS
238
1/2
= [CaCh],Q!ubnity
limil exp
t. gp )
2kT
(-
(6.47a)
t
t.Hp Oh
for diffusion of magnesium IOns would be Q = t.H + -2-' t er more
complex situations may arise in real materials.
*W.1. Minford and V. S. Stubican, J.'Am. Ceram. Soc., 57, 363, 1974.
6.5
239
241
ATOM MOBlLITY
Temperalure "el
Co in CoO
(ilirlj
!'
N in UN
/
~
'
~
lO-lO
'"o
182.4
45'6~1.2
c:
o
.;;;
31.9
:E
21.7
13.7
kcai/mole
Zn; + e'
(6048a)
e = [Zri] = P ~~ .
(6048b)
Zn',
o in
UO~()J
The diffusion of zinc ions occurs by the interstitial mechanism; thus the
diffusion coefficient increases with P Zn (Fig. 6.12). A similar type of
Q)
""E 10- 11
.8-
ZnO
Q)
'u
:E
~ 10- 12
e
o
'Vi
Fig. 6.11. Diffusion coefficients in sorne common ceramics. The activation energy Q can be
estimated ,from the slope and the insert, for example, for O in Cao.ZrO.860I.86 the
Q = 29 kcalfmole.
.
0.\
10
Pressure Zn(atm)
Fig. 6.12.
240
0.01
242
INTRODUCTION TO CERAMICS
ATOM MOBILITY
243
'1'
logD M
logD M
const '1'
const. P0 2
11'1'
(6.49a)
where
'1'
M~
ClGo:
4[ V:a
Po,
1/2
J
_
-
Ko -_ e
-AG.,JkT
(6A9b)
[ ClG']
(1)I/J
[ ClG']
4 Po, exp [ClGo].
- 3kT exp - kT
= -yv 2[V!:t]
= -yv 2
const P0 2
exp - kT
1/6
lIT
Fig. 6: 13. Schematic representaton oI the variaton oI diffusvity D... delect concentration
rV~l, and mobility B" with temperature and oxygen pressure.
(6.50)
Thus the oxygen diffusion coefficient is
const P0 2
11'1'
(6.51)
(6.52)
~~'J
[_ClGo]
[_ClG']
3kT exp
kT
(6.53)
244
INTRODUCTlON TO CERAMICS
1
1100C defect model lor CoO
-2 -
="
~fl' M]
" .I
W;J = 400,:pm
= 2 [VM )--;;.,<----- P = 2 [VM] ---~
10-(;
'---I------,-----.----.
-3
-4
=-
-4
-6
-3
-2
log Po, (atm)
-1
lO-s
ul1J
-7
"'
~';'-
- - Predicted curve
:::
l1J
Vl
o?E
!o!
tlIl
-'2
10-'"
-6
-5
-4
-3
-2
log Po, (atm)
-1
Fig. 6.14. Elfect of the oxygen partial pressure on the defect concentration and cobali
tracer dilfusivity in CoO. From W. B. Crow, Aerospace Res, Labs,
*J.
245
ATOM MOBILITY
INTRODUCTION TO CERAMICS
246
247
O,----,----.----.,----~
-5
eB
-10
--------- - - - __
t::
no
S!.
Qj
-151=------
-20
-25
vaco interst.
oxygen metal -----
1.90
2.00
2.05
2.10
ratio O/M
Fig.6,17, Predicted defect concentrations in VO, at 1600C for different deviations from
~toichiometry. The set of formation energies tJ.O po = 3.0 eV, tJ.O s = 6.4 eV a;d "tJ.'Opu =
9.5 eV was used for the calculations. From H. Matzke.
logPo ,
t::
no
S!.
const Po,
111'
1/1'
Fig. 6.16.
DOi
n.ull
= 2 Ve; + V'(J
0 0 = 0'[+
Ve;
U u = Ui'" + V'(J
OzCg) = 20 0
i"-------I
const T
no
S!.
'{
/1
"O
+ V;:; +4h'
-6.4
Ks=exPkT
(6.541
-3.0
K Fo = exp kT
(6.551
-9.5
(6.561
KFu= eXPkT
Ko, = Po,
t/4
exp
tlHo,
4kT
(6.57!
= Do exp
- tlH6.i
kT
(6.58)
lo the oxygen-deficient range U02-" oxygen vacancies are more prevalent, and
- tlH6.v
(6.59)
D O.v = D oexp
kT
Because the uranium defect concentrations are coupled through the
Schollky equation to the oxygen defect concentrations, the diffusion of
IIIraoium in U02+' is given by
D
- D
U,v -
oexp
- D
U.v -
(6.60)
- tlO s + tlHL.v
kT
(6.61 )
oexp
249
ATOM MOBILITY
INTRODUCTION TO CERAMICS
248
10- ,--,-----,---.,---------,----,-------,
-21 (~GFo kT
(6.62)
-(~Gs -~GFo+~H0.v)
kT
(6.63)
Do.; = Doexp
- D
U.v -
oexp
~Ho.;)
10-10
'"
v>
-;"';-
-6 -71-
:::
10- 11
Oxygen
-81-
-9-
-101-
-11,-
1500C
1f
-12-13 -
Uranium
t/.~.
......
-14 -
-15-
+IF
..
0.7
Fig. 6.19.
+' .._6X
+I
I
/-<-0
/..,r,
-17-
I
i
2.1
22
ratio O/M
Experimental data for O and U diffusion in U0 2 +,. From H. Matzke.
I
2~
Fig.6.18.
_--~~
-16,-
1O-1~ L--_ _
250
"
6.6
INTRODUCTION TO CERAMICS
ATOM MOBILITY
251
r
A
Bulk
Of----
- - - - - Boundary- - - -
{j _
I
J
I
i
>y
(a)
Limil 01 penelralion
al time t
Fig. 6.20.
~ Boundaries normal
Model
for grain-
lo surlace
(b)
(a)
In c(y , t) = (TTD,t)I/'(oDb/DI)'/Z'
-V2
y + const
(6.65)
(6.66)
252
Time
3 x lO\ec
4
1.8 x 10
3
7.2 X 10
3
3.6 X 10
10"
253
ATOM MOBILITY
INTRODUCTION TO CERAMICS
l!1
bJ)
:
<ro
e='
o
!:! 10.1
r--
(Y)
'"
=>
o
Penetration depth
Fig. 6.21.
(p.)
Q 6
'"
E
'"
u
ro
~
w
4
x
lLJ.
11/-
300
200 150
100
80
254
INTRODUCTION TO CERAMICS
ATOM MOBILITY
255
.2
~
u
ro
.2
~
(IJ
200
150
100
50
50
100
150
200
fg. 6.23. PIOI of Ni" concenlration as a funclon of penetration normal lo the gran
~oundary al varous distances from specmen surface. Sandwich type of couple, prepared
..ith a natural bcryslal of MgO. Microbeam probe data. NiK o fluorescent radalon. From
B. J. Wuensch and T. Vasilos, J. Am. Ceram. Soc., 49,433 (1966).
SrTiO) and looked for but not found in BeO, U0 2, CU20, (ZrCa)02' and
rnrium aluminum garnet. Enhanced cation diffusion in oxides has been
reported for U02, SrTiO), (ZrCa)02' and looked for but not found in
AhO), Fe203, NiO, and BeO. In many cases the reports are discordant and
e\"en contradictory, as might be expected from the difficu1ty of the
measurements and a strong expected infiuence of impurities and non~loichiometry.
For "wet" alkali halides and for nonequilibrium measurements on other
malerials with observed phase separation and wide regions of segregation
11 Ihe grain boundary, interpretation requires a detailed description of the
;rrecipitate or segregate distribution, which has yet to be provided. For pure
d!)' samples of alkali halides and for measurements where concentration
prefiles have been determined in the regime of constant sample compositi<ln, lhe activation energy for boundary diffusion is smaller than that for
257
ATOM MOBILITY
INTRODUCTION TO CERAMICS
256
19501850 1750
lO-lO
10-
12
10-1\
10- 13
o
(IJ
Vl
~~
10- 12
E
!::'
Vl
c:
(IJ
0';'-
10-].1
E
.!:!
c: 10- 1:)
~\ ..... ..........
o
Spheres
~ Grain
~
80115 mesh
170200 mesh
o
~- .....
-.
6065 mesh
o
Annealed
1000/T(oK'I)
Fig. 6.24. Comparison of aluminum ion self-diffusion coefficients with oxygen ion self
diffusion coefficients in aluminum oxide. From Y. Oishi and W. D. Kingery, J. Cllem. PIIYS.,
33, 905 (1960).
bulk diffusion. This behavior is found with metal systems and is expected
from considerations of grain-boundary structure. These data can be
adequately interpreted in terms o a boundary diffusion width of a few
3
6
atom distances and a boundary diffusion coefficient 10 to 10 greater than
the bulk diffusion coefficient.
For at least sorne materials which have a substantial preference for
grain-boundary diffusion of only one ion-O in Ah03 and MgO, U in V0 2,
Ca and Zr in (ZrCa)02-the ion with high grain-boundary mobility has the
same sign as the anticipated grain-boundary charge for the composition
rather than diffusion coefficient, where the two are related by the relation
(6.68)
K=DS
Here K is the permeability (the volume of gas at s.t.p. passing per second
through a unit area of glass, 1 cm in thickness, with a l-atm pressure
difference of the gas across the glass), and S is the solubility (the volume
of gas at s.t.p. dissolved in a unit volume of glass per atmosphere of
external gas pressure).
The solubility increases with temperature, as
[S] = [So] exp ( - .Hs)
RT
(6.69)
K= Koexp ( - .H.)
RT
.H. = .Hs + .H
where
259
ATOM MOBILITY
INTRODUCTION TO CERAMICS
, 258
(6.70)
-8
-9
'
o
-10
Qi
>
:5
'';:
-11
~7740
'\~
comb~stion~J)
tublng
'In
no. 1720
'"
Q.l
Q.l
Cl.
-12
X'''Y ,h;eld
"~ID\~
bO~
~
~~
" ID
"
-13
Phosphate
-14
-15
l"d
"
~~~'
o~
"'-o
ro
70520
,,~.
'-o:~,.
"'~~"
~
Vycor
+.
\l,.
1O-!1
ID,
Soda lime
no. 008
"
Boro-silicate
",.650
"-
o'
l'.-7720
7040
0....
7050
07056
e
o
~ 10-10
Q.l
E
a;
"-
10- 11
Chemic~1
OY'"
no, 7740
Si0 2 + B 2 0:+ P2 0 5 <mole %)
Fig. 6.26. The permeation velocity of helium through various glasses, as measured bl'
Norton. From J. Am. Ceram. Soc., 36, 90 (1953).
Fig. 6.27. Variation of the permeation rate withthe concentration of network formers
ISiO" B,O), P,O,) in the glass. From V. O. Altemose, in Seventh Symposillm on the Art of
G/assblowing, American Scientific Glassblowers Society, Wilmington, 1962.
For diffusion of rare gases (He, Ne, etc.) in glass, there seems to be
little change in behavior in the vicinity of the glass transition (for sorne of
the glasses shown in Fig. 6.26, the data bridge the region of the glass
transition). In contrast to this, pronounced changes are generally observed in the diffusion of modifying cations. An example of such behavior
is shown in Fig. 6.29 for Na+ ' diffusion in soda-lime-silica glasses of
various compositions. The breaks seen in the data correspond to the
region of the glass transition and somewhat aboye in temperature. The
activation energies for transport in the liquids are in the range of 23 to
27kcal/g-atom; those for the corresponding glasses range fr.om 15 to
20 kcal/g-atom. Similar changes in the activation energy for cation
diffusion on passing through the glass transition have been observed for
other systems as well, but the origin of such changes remains to be
elucidated satisfactorily.
As the amounts of modifying cations in silicate glasses are increased,
the activation energy for their diffusive transport decreases, and the
diffusion coefficient increases. These changes presumably reflect the
breaking up of the network and a decrease in the average interionic
separation. Divalent cations diffuse much more slowly at a given tempera-
25
Qj
20
"u
'"
c:s
>,
DO
Q
e
<l!
e
o
..::;
'"
>
ti
261
ATOM MOBILITY
INTRODUCTION TO CERAMICS
260
shown in Fig. 6.28. These activation energies should reflect largely the
strain energy required to dilate cavities in the glass structure sufficiently
to permit transport. Useful information about structural features of fused
silica can be obtained from the data in Fig. 6.28, using an expression for
the elastic energy required to dilate an ellipsoidal cavity from radius rd
to r
(6.71)
E" = 87TG(r - rSE(~)
10- 7 I=----"'x~rr---------_==l
<l!
--,--;::-,..,--
---:::::1
o~
~
10
.~~~
9
6
~~ Na20-~~ CaO-------I."'---'-"~~
6
16
21
21
12
9
8
262
INTRODUCTION TO CERAMICS
ATOM MOBILITY
ture than monovalent cations, and their activation energies are general!y
much larger. In al! cases, there seems to be no direct relation between
transport of the modifying cations and the fiow properties of the
materials. For example, the activation energies for viscous fiow in sodalime-silica compositions similar to those shown in Fig. 6.29 are in the range
of 100 kcal/g-atom; the activation energy for Na ion diffusion is much
smaller, in the range of 25 kcal/g-atom. Such differences are not unexpected in light of the significantly different atomic processes involved in
viscous fiow and modifying cation diffusion. The viscous-fiow data may
correlate much better with the diffusion of the network-forming cations
(e.g., Si in this case; a comparison of the diffusion of Na, Ca, and Si in glass
is given in Fig. 6.30).
Diffusion coefficients of modifying cations in glasses cooled rapidly
through the glass transition region are gene rally higher than those in
well-annealed glasses of the same' composition. This difference can be as
large as an order of magnitude or more and very likely reflects differences
in the specific volumes of the glasses, with the larger-volume, more open
structure being characterized by the larger diffusivity.
Many of the univalent cations can be substituted for one another in
various glass structures. This is exemplified by Ag ions, which can be
substituted completely for N a ions even at temperatu res below the glass
transition region. Li and K ions can be at least partial!y substituted for N a
ions under similar conditions, but in these cases if the exchange is carried
too far, stresses can build up in the glass which are large enough to result
in its fracture. The substitution of one ion for another is widely used in the
technique of ion-exchange strengthening of glasses and is discussed in
Chapter 15.
263
Suggested Reading
1.
Problems
6.1. (a)
10- 10 l--.L-.L-..l-...l-J---L~-l...-l...-,-L-,-L-'--L--l.--'
0.5
1.0
1000IT(oK)
Fig.6.30. Diffusion of Na+ in a sodium silicate glass, from J. R. Johnson, R. H. Brstow, and
H. H. Blau, J. Am. Ceram. Soc., 34,165 (1951), and Ca2 +and Si 4 +in a 40CaO-20AJ,O,-40SiO,
slag, from H. Towers and J. Chipman, Trans. A.I.M.E., 209, 709 (1957).
(b)
Describe and discuss fully the experiments you would conduct and the nature of
the results you would hope to obtain if, for a given ceramic oxide. you wished to
ascertain:
(1) Whether diffusion rates in a gven temperture range occurred by an intrinsic
or extrinsic mechanism.
(2) Diffusion in a given polycrystalline ceramic was predominantly along grain
boundaries or through the lattice.
(3) Whether diffusion Occurred va a vacancy mechanism or a ring type of
interchange.
What concentration of trivalent impurity is required to make the cation diffusivity
of Mg++ in MgO extrinsic to its melting_Boint. Explain fully all estimates of
property values made in your calculation.
..:", .....,.,.:..
._.,
"
,!.J..
INTRODUCTION TO CERAMICS
264
6.2. The application of pressure (not necessarily hydrostatic) has been observed to affce!
several processes which are presumed to be diffusion-controHed. Give several ways in
which pressure can affect self-diffusion coefficients and the expected direction of
change in D with increasing pressure for (a) vacancy diffusion and (b) interstitial
diffusion.
6.3. If diffusion anneal times are doubled, at a given temperature, average penetration
depths for the diffusing species will increase by a factor of
_
6.4. Discuss the infiuence of zinc chloride addition (10-' mole%) to the diffusivity of aH ions
(Zn, Na, and Cl) in a single-crystal NaCI from room temperature to the melting
temperature.
6.5. From the sintering data on ZnS, diffusion coefficients were measured. At 563C, a
diffusion coefficient of 3 x 10-' cm'fsec was measured; at 450C 1.0 x 10-' cm'fsec. (al
Determine the activation energy and Do. (b) From your knowledge of the structurc.
predict the nature of the activation energy from the point of view of movement and
creation of defects. (e) On the basis of similarity with ZnO predict the change in D with
partial pressure of sulfur.
6.6. Figure 6.30 shows diffusion coefficients for ions in an annealed sodium-calcium silicatc
glass. (a) Why do es Na+ diffuse fas ter than Ca++ and Si+'? (b) What is the non linear
part of the Na+ diffusion curve due to? (e) How would quenching the glass change the
plot? (d) What is the activation energy (experimental) for Na+ diffusion in the liquid
state of the glass.
6.7. (a) What is the predicted oxygen partial pressure dependence of iron ion diffusion in
iron deficient Fe,O,? (b) What is the predicted oxygen partial pressure dependence of
oxygen diffusion in iron excess Fe,O,?
6.8. A student decides to study Ca diffusion in NaCI. It is known that Ca diffuses via a
vacancy mechanism on the Na sublattice and that over the range of experimentation
[Ca;',,] = [V ~,,]. Show that De" is a function of [Ca;',,]; thus ae fal '" Da'clax'.
.,.:;
': !
part 111
DEVELOPMENT OF
MICROSTRUCTURES
IN CERAMICS
266
INTRODUCTION TO CERAMICS
MICROSTRUCTURES IN CERAMICS
~~~~citl~
267
t
1
7
-------------------,---------
Ceramic PhaseEquilibrium
Diagrams
At equilibrium a system is in its lowest free energy state for the
composition, temperature, pressure, and other imposed conditions. When
a given set of system parameters is fixed, there is only one mixture of
phases that can be present, and the composition of each of these phases is
determined. Phase-equilibrium diagrams provide a clear and concise
method of graphically representing this equilibrium situation and are an
invaluable tool for characterizing ceramic systems. They record the
composition of each phase present, the number of phases present, and the
amounts of each phase present at equilibrium.
The time that it takes to reach this equilibrium state from any arbitrary
slarting point is highly variable and depends on factors other than the final
equilibrium state. Particularly for systems rich in silica the high viscosity
of the liquid phase leads to slow reaction rates and very long times before
equilibrium is established; equilibrium is rarely achieved. For these
systems and for others, metastable equilibrium, in which the system tends
lo a lower but not the lowest free energy state, becomes particularly
important.
It is obvious that the phases present and their composition are an
essential element in analysing, controlling, improving, and developing
ceramic materials. Phase diagrams are used for determining phase and
composition change occurring when the partial pressure of oxygen or
olher gases is changed, for evaluating the effects of heat treatments on
crystallization and precipitation processes, for planning new composilions, and for many other purposes. We have aiready seen the importance
of thermodynamic equilibrium in our discussions of single-phase systems:
crystalline solid solutions (Chapter 2), crystalline imperfections (Chapter
4), structure of glasses (Chapter 3), and surfaces and interfaces (Chapter
5). In this chapter we concentrate our attention on equilibria involving
lwo or more phases.
269
270
7.1
INTRODUCTION TO CERAMICS
}.L2
+ V ==
+2
(7.1)
is satisfied. This is known as the phase rule, with P being the number of
phases present at equilibrium, V the variance or number of degrees ~f
freedom, and C the number of components. This relationship is the basls
for preparing and using phase-equilibrium diagrams.
A phase is defined as any part of the system which is physically
homogeneous and bounded by a surface so that it is n:echanically
separable from other parts of the system. It need not be contmuous; that
is two ice cubes in a drink are one phase. The number of degrees of
fr~edom or the variance is the number of intensive variables (pressure.
temperature, composition) that can be altered independently and arbitrarily without bringing about the disappearance of a phase or the appearanee
of a new phase. The number of components is the smal1est num?er of
independently variable chemical constituents necessary and .sufficIent to
express the composition of each phase present. The. meanmg of .these
terms wil1 become clearer as they are applied to specIfic systems m lhe
following sections.
Deduction of the phase rule fol1ows directly from the requirem,ent lhat
the chemical potential }.L; of each constituent i be the same in every phase
present at equilibrium. The chemical potential is equal to the partial molar
free energy Gio
==}.L2
==}.L2
== == }.L2
271
(7.3)
etc.
== P (C
- 1) + 2
== P (C
V == C - P
+2
== C(P -1)
- 1) + 2 - C (P - 1)
(7.4)
(7.5)
(7.6)
(7.7)
INTRODUCTION TO CERAMICS
272
::;'"
Ul
273
1.0
----
c..
Ice 1
Vapor
0.001 L.c:::c...-L--l_..L---:'---'-~L-...l.---:":-----..l.--:::'::--J-~::--'--:-:
-20
O
40
60
120
Temperature (OC)
Fig. 7.1.
e + 2, I + V = 1 + 2, V =
2,
and both pressure and temperature can be arbitrarily changed without the
appearance of a new phase.
At l atm pressure, as shown in Fig. 7.1, equilibrium between the solid
and (iquid occurs at OC, the freezing point. Equilibrium coexistence of
liquid and vapor occurs at !OOC, the boiling point. The slope of these
phase-boundary curves is at any point determined by the ClausiusClapeyron equation
0.1
0.01 -
+V
(7.8)
where !1H is the molar heat of fusion, vaporization, or transformation,
is the molar volume change, and T is the temperature. Since !1H is
always positive and !1 V is usually positive on going from a lowlemperature to a high-temperature form, the slopes of these curves are
usually positive~ Since !1 V is usually small for condensed-phase transformations, lines between solid phases are often almost vertical.
There are a number of applications of one-component phase diagrams
in ceramics. Perhaps the most spectacular of these is the development of
Ihe commercial production of synthetic diamonds from graphite. High
lemperatures and high pressures are necessary, as shown in Fig. 7.3. In
addition, the presence of a liquid metal catalyst or mineralizer such as
nickel is required for the reaction to proceed at a useful rateo Another
system which has been extensively studied at high pressure and temperalure is Si0 2. At pressures aboye 30 to 40 kilobars a new'phase, coesite,
appears which has been found to occur in nature as a result of meteorite
impacts. At even higher pressures, aboye 100 kilobars, another new
phase, stishovite, has been found.
Of greater interest for ceramic applications are the low-pressure,phases
of silica, still subject to sorne dispute as to the role of minor impurities,
but illustrated schematically in Fig. 7.4. There are five condensed phases
which occur at equilibrium-a -quartz, f3 -quartz, f32-tridymite, f3cristobalite, and liquid silica. At 1 atm pressure the transition temperatures are as shown. As discussed in Section 2.10, the a -quartz-f3 -quartz
lransition at 573 0 is rapid and reversible. The other transformations shown
are sluggish, so that long periods of time are required to reach equilib~V
(a)
(b)
(e)
(d)
Fig. 7.2. Experimental conditions for a single-component system with (a) one phase,
(b) two phases, (e) three phases, and (d) common conditions, wth the condensed phase
exposed to a gas atmosphere.
1000,..------.-------r---,--.,----.,.------,
~
ro
.o
600
::J
V1
V1
Q)
Diamond
el:
200
1000
3000
5000
T ("K)
Fig. 7.3. High-press_ure, high-temperature phase equilibrium diagram for carbono From C.
G. Suits, Am. Sci., 52, 395 (1964).
573
870
1470 0 1713 0
1 atm
~
Liquid
Liquid
ro
::J
O'
a-Quartz
ca.
"'-{3z-Tridymite
Vapor
Temperature
Fig. 7.4.
274
275
Fig. 7.5.
276
INTRODUCTION TO CERAMICS
7.3
277
aliase ehanges but give no information about the exact reactions takng
gfuce. In addition to the measurements of temperature changes then,
p&ase identification before and after any phase change is required. This
, INTRODUCTION TO CERAMICS
diagram should only be accepted with caution. They represent the resulls
of difficult experimental techniques and analysis.
These cautions are particularly applicable to regions of limited cryslal
line solution at high temperatures, since for many systems exsolution
occurs rapidly on cooling and for many systems this was not a feature oC
the experimenters' interes1. Similarly, phase separation at moderate and
low temperatures often results in submicroscopic phases which are nol
recognized without the use of electron microscopy and electron diffrac
tion, which have not as yet been widely applied to crystalline solid
solutions.
278
7.4
Two-Component Systems
P +V =
e + 2, P + 1 = 2 + 2, P
,-------
I
1
1
::l
roQ
~ t----~:.--r-c-----~
f-t-
-----B
__
= 3.
When three phases are present, the composition of each phase and the
lemperature are fixed, as indicated by the solid horizontal line at C.
Systems in Which a Gas Phase Is Not Important. Systems containing
only stable oxides in which the valence of the cations is fixed comprise a
large fraction of the systems of interest for ceramics and can adequately
be represented at a constant total pressure of 1 atm. At equilibrium the
chemical potential of each constituent must be equal in each phase
presento As a result the variation of chemical potential with composition
is the underlying thermodynamic consideration which determines phase
~Iability. If we consider a simple mechanical mixture of two pure
components, the free energy of the mixture OM is
(7.9)
For lhe simplest case, an ideal solution in which the heat of mixing and
changes in vibrational entropy terms are zero, random mixing gives rise to
a configurational entropy of mixing f!"S", which has been derived in Eq.
-4.14; the free energy of the solution is
O/d.S = OM - T f!"S",
I
I
279
(7.10)
and under all conditions the free energy of the solution is less than that of
a mechanical mixture; the free energy curves for the solid and liquid
~olutions and the resulting phase-equilibrium diagram are similar to those
already illustrated in Fig. 4.2. Since very dilute solutions approach ideal
bchavior, Eq. 7.10 requires that there is always at least sorne minute
~olubility on the addition of any solute to any pure substance.
Most concentrated solutions are not ideal, but many can be well
rcpresented as regular solutions in which the excess entropy of the
~olulion is negligible, but the excess enthalpy or heat of mixing f!"H" is
'lignificant. In this case the free energy of the regular solution is
Composition
Fig. 7.6.
(7.11 )
280
INTRODUCTION TO CERAMICS
1
H 2+ 202 = H 20.
-l'CiS m
>,
ID
e
w
eS
A
Composition
Composition
(a)
(b)
>,
-T4S m
ID
o:
{3
{3
IX
Composition
Composition
Fig. 7.7. Free-energy--eomposition diagrams for (a) ideal solution. (b) and (e) regular
solutions. and (d) incomplete solid solution.
281.
(7.13)
T2
'"
""Q
'"
""Q
c-
Q)
Q)
Q)
Q)
Q)
Q)
"-lquid
1600
"quid oxide
'"
e!'
Q)
'"
""
Q
Q)
Q)
O'd'
---10
I
le
+
wstite
I
I
1200
'-lron
--
-1'
-'-,10--=_
~ 1000
wstite
Q
o-
'"
""Q
Q)
Q)
'"
wuslle
Q)
l'
hematite
-,
'--10--
magnetite
-1>
-10--
600
-]ij
_"lO
---TIO--
1 -ltI
'--'-'--IO-_
Liquid
Q)
--10---=-,
-magei~-
~/ 10--' .--....
a-Iron
800
---------------------
--+IO~-
-lO
-+-10--
u
~
XII
-air---
I
I
'-lO'~-
:
-H
-',10-_
P:
I
I
T.,
hematite
"'..'"
w~tite + liquid"'..
'. ~=~!~f=l
I
Q)
Q)
"-<'o,
I
I
Q)
Q)
'.!.
T,
T,
:~=~~-
10--:':"
...ll~=:~ .
I
10=-"-;_.
'--'-'-'-'--'_'_IO~S_'_
'-'--'-'-'-'-'-10-=-""-_
400
Ci-
iron
magnetile
. - _10---'."_
. - -10---"- . -10---'-'-=
'--IO-~;
-'-10---"'--IO---='!_
+f3
O- - - - - - - - - - - - - - - --p
A
- - TI
XB
Fig. 7.8. Free-energy-composition curves and the temperature-compostion equilibrium
diagram for a eutectic system. From P. Gordon, Principies of Phase Diagrams in Materiah
Systems, McGraw-HiII Book Company, New York, 1968.
282
f.7.9. (a) Phase relations in the FeO-Fe,O, system. Dash-dot lines are oxygen isobars.
:\lternate solidification paths for composition A are discussed in text. From A. Muan and E.
f. Osborn, Phase Equilibria among Oxides in Steelmaking, Addison-Wesley Publishing
(ompany, Inc., Reading, Mass., 1965.
283
INTRODUCTION TO CERAMICS
284
285
2600 -,-----.---,------r---,---,----r----,
5.0
1700
Liquid iron
5.51--
_-_--11600
-
liquid oxide
1500
"""'"
2400
"
-Iron
'
....
....
....
1400
,,
,,
Liquid
" ,,
Lic
IleO
1200
1100
-2
2000 t-
,,
,,
,,
98:..;O'-o-------~''>...L
--=1c:.
BeO3 Alza,
Alza,
1800
o ---------c--------&0
---t--BeAlzO,
BeAl 60
7.5
oA
lag poz(atml
Fig. 7.9 (continued). (b) Temperature-oxygen pressure diagram for the Fe-FezO, syslem.
From J. B. Wagner, Bul/. Am. Cero Soc., 53, 224 (1974).
"
3:1
Weighl % AlzO,
lO
80
1:1
1:3 Alza,
lo be of limited extent, although this is uncertain, and are not shown in the
diagram. The system can be divided into three simpler two-component
systems (BeO-BeAbO., BeAlzO.-BeAI60 IO , and BeA160,o-Al203) in each
oC which the freezing point of the pure material is lowered by addition of
Ihe second component. The BeO-BeAbO. subsystem contains a compound, Be3Ah06, which melts incongruentIy, as discussed - in the next
section.. ~n t~e sin~le-phase regions there is only one phase present, its
composltlOn IS obvlOusly that of the entire system, and it comprises 100%
oC the syste.m ~point .A in F~g. 7.10). In two-phase regions the phases
~resent are lOdlcated m the dJagram (point B in Fig. 7.10); the composilJon of each phase is ~epresented by the intersection of a constant
lemperature tie line and the phase-boundary lines. The amounts of each
phase can also be determined fram the fact that the sum of the
composition times the amount of each phase present must equal the
composition of the entire system. For example, at point e in Fig. 7.10 the
entire ~~stem is composed of 29% Alz03 and consists of two phases, BeO
(contalOlOg no Ab03) and 3BeOAlz0 3 (which contains 58% Ab03). There
286
must be 50% of each phase present for a mass balance to give the correel
overall composition. This can be represented graphicalIy in the diagram
by the lever principie, in which the distance from one phase boundary lo
the overall system composition, divided by the distance from thal
boundary to the second phase boundary, is the fraction of the second
phase present. That is, in Fig. 7.10,
OC
OD (lOO) = Per cent 3BeOAh03
A little consideration indicates that the ratio of phases is given as
DC
BeO
OC = 3BeOAb03
This same method can be used for determining the amounts of phases
present at any point in the diagram.
Consider the changes that occur in the phases present on heating a
composition such as E, which is a mixture of BeAh04 and BeAI 6 0,o.
These phases remain the only ones present until a temperature of 1850C
is reached; at this eutectic temperature there is a reaction, BeAhO, +
BeAl 60 lO = Liquid (85% AhO,), which continues at constant temperalure
to form the eutectic liquid until alI the BeAI6 0 lO is consumed. On furlher
heating more of the BeAh04 dissolves in the liquid, so that the liquid
composition changes along GF until at about 1875C alI the BeAh04 has
disappeared and the system is entirely liquido On cooling this liquido
exactly the reverse occurs during equilibrium solidification.
As an exercise students should calculate the fraction of each phase
present for different temperatures and different system compositions.
One of the main features of eutectic systems is the lowering of lhe
temperature at which liquid is formed. In the BeO-AhO, system, for
example, the pure end members melt at temperatures of 2500C and
2040C, respectively. In contrast, in the two-component system a liquid is
formed at temperatures as low as 1835C. This may be an advantage or
disadvantage for different applications. For maximum temperature use as
a refractory we want no liquid to be formed. Addition of even a small
amount of BeO to AlzO, results in the formation of a substantial amount
of a fluid liquid at 1890C and makes it useless as a refractory aboye lhis
temperature. However, if high-temperature applications are not of majar
importance, it may be desirable to form the liquid as an aid to firing al
lower temperatures, since liquid increases the ease of densification. Ihis
is true, for example, in the system Ti0 2-U02, in which addition of It;t
Ti0 2 forms a euteetic liquid, which is a great aid in obtaining higID
densities at low temperatures. The structure of this system, shown in Fig.
287
o
le eomposl-
hon.
C-"J. ,. .
C~~,
ir:;'YI
Fg.7.11. Structure of 99% VO,-I% TiO, ceramic (228X HNO etch) v'o :Sth
.
"!tase bond d b
.
,
Jo, I
e pnmary
,
e
y eutectlc composition. Courtesy G. Ploetz.
289
Cristobalite
+ liquid
1500
1400
Liquid
1300
1200
Tridymite
50
60
70
+ liquid
IS00 r - - - - - - r - - - - - , - - - - - - - - - - , - - - - - - - - ,
SO
Weight
hree phases present (two solids and a liquid), so that the temperature
aemains fixed until the reaction is completed. Potash feldspar (Fig. 7.14)
also meIts in this way.
Phase Separation. When a liquid or crystalline solution is cooled, it
i<eparates into two separate phases at the consolute temperature as long as
~ excess enthalpy is positive (see Fig. 7.7). This phenomenon is particullMly important relative to the development of substructure in glasses, as
dis.cussed in Chapter 3 (Figs. 3.11, 3.12,3.14 to 3.19). AIthough it has been
~ss fulIy investigated for crystalline oxide solid solutions, it is probably
tqualIy important for these systems when they are exposed to moderate
!emperatures for long periods of time. The system CoO-NiO is shown in
fig. 7.15.
:lTe
~~ 8iO~
1713:!:5
Fig.7.12. The binary system Na 2 SiO,-Si0 2 The dashed line shows metastable liquid-liquid
phase separation.
Cristobalite
1600
Liquid
. 2900 r---,--,-----,---,---,----------,-----,,----,.-----,
9 1400
Liquid B
MgO+
Iiquid
/'
....
Liquid A
.... \
---
\\
1000
IS50
o
Leucite
'K20A12 03' 48i0 2
,
I
20
40
60
Potash
feldspar
K20'A1203'6SiOz
Weight per cent 8i02
so
100
Fg. 7.14. The binary system K 2 0AI,O,4Si0 2 (leucite)-Si0 2 From J. F. Schairer and N. L.
8owen, Bull. Soco Geol. Fin/., 20, 74 (1947). Two-phase regions are shown shaded in this
diagram.
288
Liquid
2000
-=---==-===.=..-------------.::::::::::-~-
1800
1600
_1400
f-?
h
1200
1000
800
.4
Mole fraction
0.2
Fig. 7.15.
CoO
3000 r - r - r - - r - - , - - , - - , - - , - - , - - - - ,
2800
2800
2600
2400
MgO ss
MgO s.s.
liquid
MgO ss
E2200
23700
~ 2000
Q)
Q)
Q.
2200
1800
E
Q)
f-
MgO ss
2000
+ CuO ss
1600
MgO s.s.
+ MgCr204 s.s.
1400
1800
1600
1200
MgO
Fig.7.16.
1000 ~---J~____:::':_-L.--':--L.-_____:':--.L----'
20
Weight % CaO
290
291
MgO
Fig. 7.. 17.
292
INTRODUCTION TO CERAMICS
with CaO in MgO requires that excess CaO be added to prevent the
formation of low-melting intergranular silicates.
In the MgO-Ah03 system (Fig. 4.3) there is extensive solubility of MgO
and of Ah03 in spinel. As spinel in this composition range is cooled, the
solubility decreases, and corundum precipitates as a separate solid phase
(Fig.7.18).
This same sort of limited solid solution is observed in the CaO-Zr02
system (Fig. 7.19); in this system there are three different fields of solid
solution, the tetragonal form, the cubic form, and the monoclinic formo
Pure Zr02 exhibits a monoclinic tetragonal phase transition at lOOOC,
which involves a large volume change and makes the use of pure zirconia
impossible as a ceramic material. Addition of lime to form the cubic solid
solution, which has no phase transition, is one basis for stabilized
zirconia, a valuable refractory.
Complex Diagrams. All the basic parts of binary phase-equilibrium
diagrams have been illustrated; readers should be able to identify the
number of phases, composition of phases, and amounts of phases present
at any composition and temperature from any of these diagrams with ease
and confidence. If they cannot, they should consult one of the more
extensive treatments listed in the references.
293
2500
2000 -
Tetragonal
mconia
E1500 ~
.3
~
'"
Q.
~ 1000 ~'-'-__
500
Fig.7.19. The binary system CaO-Zr02' From P. Duwez, F. Odell, and F. H. Brown, Ir.,
J. Am. Ceram. Soc., 35, 109 (1952). Two-phase regions are shown shaded in this figure.
Fig.7.18. Precipitation of AI 2 0, from spinel solid solution on cooling (400x H 2SO. etch).
Courtesy R. L. Coble.
,..../\ V>
294/
:\i.
.'::;
. INTRODUCTION TO CERAMICS
1900,--------,-----,---,.----,----,..------,
295
~
~
ro
(;
E1500
<1l
1-
CoO
33.3
Ba2TiO.j
80
40
90
Fig.7.20. The binary system Ba,TiO,-TiO,. From D. E. Rase and R. Roy. J. Am. Ceram.
Soco 38. 111 (1955). Two-phase regions are shown shaded in this figure.
l' = 16DD K
PO o = cons!
-7
= 1.5 x 10
Co
-6.6
(Co,Ni) O,,,
o,
-7.0
c';
Di)
-7.4
-7.8
(1)
(a)
(3)
Fig.7.21. (a) Co-Ni-O system. (1) Composition of condensed phases as a function of Po,;
(2) oxygen isobars for equilibrium between the oxide solid solution and the alloy solution; (3)
oickel activity as a function of Po,.
296
INTRODUCTION TO CERAMICS
297
(2)
Fe20;m7J7r:::::=;:::::=-::::I7:::::::::O:::P::::::::::l~?~CrZ03
Spinel---h:~~~8~:;:;~~B::e;;::::~
Wstite-o
::J
::J
Q)
Q)
"-
"-
E
Q)
E
Q)
1-
1-
- 2 f=-::--=::::::::::::-__
Fe:O 4/
Fe2 0 :1
-4
(a)
T = 1573"K
rE
Fig.7.22.
OJ)
y
(b)
Space diagram of (a) ternary eutectic and (b) complete series of solid solutions.
-6
FeO/Fe,,04
-8 -
-10 Fe/FeO
Spinel
(Fe, Cr):O.
Wstite
spinel
p~-'-----~
c~-\
Alloy
spinel
-14 Alloy
-16
Fe
sesquioxlde
AIIO';Y:,"--------
-'
Cr
0.4
Xc,'
.->
(b)
Fig. 7.21 (continued). (b) Fe-Cr-O system. (1) Composition-Po, diagram and (2) oxygen
isobars for cquilibrium bctwccn two phascs. From A. Pelton and H. Schmalzried, Met. Trts.,
4, 1395 (1973).
299
x
Composition
Many ternary systems are of interest in ceramic science and technology. Two of these, the K 20-AbOJ-Si0 2 system and the Na20-CaO-SiO~
system, are ilIustrated in Figs. 7.24 and 7.25. Another important system,
the MgO-AbOJ-Si0 2 system, is discussed in Section 7.8. The
K 20-AbO,-Si0 2 system is important as the basis for many porcelain
compositions. The eutectic in 'the subsystem potash-feldsparsilica-mullite determines the firing behavior in many compositions. As
discussed in Chapter 10, porcelain compositions are adjusted mainly on
the basis of (a) ease in forming and (h) firing behavior. Although real
systems are usually somewhat more complex, this ternary diagram
provides a good description of the compositions used. The N a20-CaOSi02 system forms the basis for much glass technology. Most compositians fall along the border between the primary phase of devitrite,
Na203CaO6Si02, and silica; the liquidus temperature is 900 to 1050C.
Fig. 7.23. (a) Crystallization path illustraled in Fig. 7.22a and (b) applicalion of cenler of
gravity principie lo a lernary syslem.
To CaO
Na202CaO<JSi02 ~
Na20'3CaO'6SiOz
(devitrite)
"",::_-:.-+---;..---7'1'-.
Two liquids
Mullile
3A1 2 0 3' 2Si0 2
2Na20CaO3Si02
80
20
10_
To NazO ~---'5"-O---'---'40L.L--<:>--3)LO-Q)J.ula.ll.-.rtzL...1.~2LO--'----'-lll.O---'---'OSi02
Na2Si03
K 2 0 d-_.-:cL_---..::.L-_.:cL_---..::.L-_.:LL_--"':.-_~/--~-..::,--"b A1 2 0 3
10
20
30
40
50
60
Weighl per cenl
70
80
90
Fig.7.24. The ternary syslem K,O-AI,O,-SiO,. From J. F. Schairer and N. L. Bowen, Am. J.
Sci., 245, 199 ( 1 9 4 7 ) . '
298
Na 2Si 20 S
(
...
301
INTRODUCTION TO CERAMICS
300
+ Tridymite
Liquid L
MuJlite
Leucte
Al z0 3
AI 2 0 3
+ Leucite +
KAS z
To K 20 ~--"----::L.----:"-_-:>'---4:>
40
Al z0 3
CJ Single-phase region
!~=c'l Two-phase regions
Three-phase regions
Fig. 7.26.
," . ,_
f'_() -
4'S~ f~
(;' ....
, '""
I~.:I:\"
\" ' \
\"
",\.
INTRODUCTION TO CERAMICS
302
1900
t 1800
~ 1800
] 1700
~ 1700
!il
! 1600
! 1600
1500
L....-L_J---::-~<;;---;;
20
40
60
80
100
Weighl per cent 01 eaeh phase present
(a) 40% Si02
1500 L....--.l--""--'------:-:O
20
40
60
80
100
Weight per ceni 01 each phase present
(b) 45% Si02
1900
E1800
E1800
~ 1700
1700
! 1600
! 1600
1500 O
20
40
60
80 100
Weight per ceni 01 each phase presenl
(e) 55% Si0 2
1900
1800
~ 1700
1600
1900~~~~~
~~~~~~~~~
t
~11"//~//;~
1800
'"
~ 1700
~~
1600
1500
Fig. 7.27.
lt is necessary to forro a
sufficient amount of liquid for vitrification, but not s~ much tha~ ware
slumps or warps during firing. The limits of liquid reqUIred vary wlth the
rO erties of the liquid but are in the range of 20 to 50 wt~. ~o have a
~u;cient range of fi.ring temperature, it is desirable that t~~ IIqUld conte~t
not change much with temperature. Forsterite. ~Om?OsltlOnS cannot. e
fired until very high temperatures if the composltl?~ IS e~actIy 42% Sl~:,
.
l"d 's formed below 1850C. ComposltIOns In the forstente
smce no IqUI 1
.'
1557C
d
enstatite field which are mainly forsterite form a hqUId at
, an
3\
since the liquidus curve is steep, the amount of liquid present changes bl
slightly with temperature, as shown in Fig. 7.27. Consequently, thes
compositions have a good firing range and are easy to vitrify. In contras
compositions that are mostly enstatite (55, 60, 65% SiOo) form larg
amounts of liquid at low temperature, and the amount of iquid prl(ser
changes rapidly with temperature. These materials have a limited firin
range and pose difficuIt control problems for economic production.
For systems in which the gas phase is important the way in whic
condensed phases appear and their compositional changes on coolin
depend on the conditions imposed. Referring back to the Fe-O syster
illustrated in Fig. 7.9, if the total condensed-phase composition remain
constant, as occurs in a c10sed nonreactive container with only
negligible amount of gas phase present, the composition A solidifies alon,
the dotted line with a corresponding decrease in the system oxygel
pressure. In contrast, if the system is cooled at constant oxygen pressure
the solidification path is along the dashed lineo In one case the resultin
product at room temperature is a mixture of iron and magnetite; in th\
second case the resulting product is hematite. Obviously in such system:
the control of oxygen pressure during cooling is essential for the contro
of the products formed.
For detailed discussions of crystaIlization paths in ternary systems the
references should be consulted. The foIlowing summary* can serve as <
review.
304
INTRODUCTION TO CERAMICS
tions of the two solid phases. Two things can occur. If this tangent line
runs between the compositions of the two solid phases, the amount of
each of these phases present increases. If the tangent line intersects an
extension of the line between solid compositions, the first phase decreases in amount (is resorbed; Reaction A + Liquid = B) as crystalJization proceeds. In sorne systems the crystallization curve leaves the
boundary curve if the first phase is completely resorbed, leaving only the
second phase. Systems in which this occurs may be inferred from a study
of the mean composition of the solid separating between successive
points on the crystallization path.
5. The crystallization curve always ends at the invariant point which
represents equilibrium of liquid with the three solid phases of the three
components within whose composition triangle the original liquid composition was found.
6. The mean composition of the solid which is crystallizing at any point
on a boundary line is shown by the intersection at that point of the tangent
with a line joining. the composition of the two solid phases which are
crystallizing.
7. The mean composition of the total solid that has crystallized up to
any point on the crystallization curve is found by extending the line
connecting the given point with the originalliquid composition to the line
connecting the compositions of the phases that have been separating.
8. The mean composition of the solid that has separated between two
points on a boundary is found at the intersection of a line passing through
these two points with a line connecting the compositions of the two solid
phases separating along this boundary.
7.8
305
100
- - Stable equilibrium diagram
2200
Metastable extension of
liquidus and sol idus lines
2100
2054 :': 6
ZOOO
Liquid
~'
Alumina
i900
:r
liquid
-189O
10
1828
10
-------/------- -- ----1---i
1700
Mullite (ss)
liquid
i
j
i
i
158r
10
1600 rrr----------.::...;:,,:--.:::.....::..:.--l
Ui
.!!!
Cristobalite
liquid
1500
Alumina +
mullite (ss)
i
i
60
70
80
Al z0 3 (mole %)
Fig.7.28. The binary system AI,O,-SiO,. From Aksay and Pask, Science, 183, 69 (1974).
306
. INTRODUCTION TO CERAMICS
Refractory properties of brick can be substantially improved if sufficient alumina is added to increase the fraction of mullite present until at
greater than 72 wt% alumina the brick is entirely mullite or a mixture of
mullite plus alumina. Under these conditions no liquid is present until
ternperatures aboye 1828C are reached: For sorne applications fused
mullite brick is used; it has superior ability to resist corrosion and
deformation at high ternperatures. The highest refractoriness is obtained
with pure alumina. Sintered Ab03 is used for laboratory ware, and
fusion-cast Ab03 is used as a glass tank refractory.
Fig.7.29. Mullite crystals in silica matrix formed by heating kaolinite (37,000x). Courtes!'
J. J. Comer.
307
MgO
2MgO Si0
2800
(lorslerHe)
189il40'
Fg. 7.30. The ternary system MgO-AI,OJ-Si0 2 From M. L. Keith and J. F. Schairer, J.
Geot., 60, 182 (1952). Regions of solid solution are not shown; see Figs. 4.3 and 7.13.
308
INTRODUCTION TO CERAMICS
309
SO
60
a.>
'"a.>
ti
"O
':;
cr-
Magnesia
refraclories
40
:.:;
20
Forsterile ceramics
Fig. 7.31. Common compositions in the ternary system MgO-AI,O,-SiO,. See text
other additives.
OL-_.L,-J-L...l:-:--=:--~::--:;-:;;~~.
1200
1400
1500
lS00
Temperature ("C)
310
INTRODUCTION TO CERAMICS
Fig. 7.33.
311
Nonequilibrium Phases
INTRODUCTION TO CERAMICS
/:;'!I/T mp
Tmp(OC) (cal/mole/al()
(1/1/) m"
(Ml/T mp ) X
(poise- 1)
(1/1/)",,,
Comments
Goocl glass
forme)'
Goocl glaso
former
Good glass
former
POOl' glass
former
Very dilE
cult to
form as
glass
Nota glalis
former
TI 2O.
450
7.3
2 X 1O-[
1.5XlO- ol
Si0 2
1713
1.1
1 X 10- 6
1.1 X 10- 6
Nu 2Si 2OG
874
7.4
5 X 10- 4
3.7 X 10- 3
I\u 2Si0 3
1088
9.2
5 X 10- 3
1.5 X 10- 2
CaSiO.
1514
7.4
10- 1
NuCl
800.5
6.9
50
0.74
3'15
tnergies required for their conversion into more stable phases cause a low
tale of transition. The energy relationships among three phases of the'
sarne composition might be represented as given in Fig. 7.34. Once any
one of these phases is formed, its rate of transformation into another
more stable phase is slow. In particular, the rate of transition to the lowest
tnergy state is specially slow for this system.
The kinetics of transformation in systems such as those iIlustrated in
Fig. 7.34 are discussed in Chapter 9 in terms of the driving force and
tnergy barrier. Structural aspects of transformations of this kind ha~e
been discussed in Chapter 2. In general, there are two common ways 10
which metastable crystals are formed. First, if a stable crystal is brought
inlo a new temperature or pressure range in which it does not transform
inlo the more stable form, metastablecrystals are formed. Second, a
precipitate or transformation may form a new meta~table phas.e: For
example, if phase lin Fig. 7.34 is cooled into the reglOn of stablhty of
phase 3, it may transform into the intermediate phase 2, which remains
present as a metastable crystaI.
The most commonly observed metastble crystalline phases not undergoing transformation are the various forms of silica (Fig. 7.5). When a
porcelain body containing quartz as an ingredient is fired at a temperature
of 1200 to 1400C, tridymite is the stable form but it never is observed; the
quartz always remains as such. In refractory silica brick, quartz used as a
raw material must have about 2% calcium oxide added to it in order to be
lransformed into the tridymite and cristobalite forms which are desirable.
The lime provides a solution-precipitation mechanism which essentially
eliminates the activation energy barrier shown in Fig. 7.34, and allows
[--~3
1-~2--~3
: : ~ 4Jt-
,.--)---,----
State 3
313
' ....L
----''-L_ _
Fig. 7.34.
314
INTRODUCTION TO CERAMICS
the stable phase to be formed. This is, in general, the effect of mineralizers such as f1uorides, water, and alkalies in silicate systems. They provide
a fluid phase through which reactions can proceed without the activation
energy barrier present for the solid-state process.
Frequently, when high-temperature crystalline forms develop during
firing of a ceramic body, they do not revert to the more stable forms on
cooling. This is particularly true for tridymite and cristobalite, which
never revert to the more stable quartz formo Similarly, in steatite bodies
the main crystalline phase at the firing temperature is the protoenstatite
form of MgSi0 3. In fine-grained samples this phase remains as a metastable phase dispersed in a glassy matrix after cooling. In large-grain samples
or on grinding -at low temperature, protoenstatite reverts to the equilib
rium form, ciinoenstatite.
A common type of nonequilibrium behavior is the formation of a
metastable phase which has a lower energy than the mother phase but is
not the lowest-energy equilibrium phase. This corresponds to the situa
tion illustrated in Fig. 7.34 in which the transition from the highest-energy
phase to an intermediate energy state occurs with a much lower activation
energy than the transition to the most stable state. It is exemplified by the
devitrification of silica glass, which occurs in the temperature range of
1200 to 1400C, to form cristobalite as the crystalline product instead of
the more stable form, tridymite. The reasons for this are usually found in
the structural relationships between the starting material and the final
product. In general, high-temperature forms have a more open structure
than low-temperature crystalline forms and consequently are more nearly
like the structure of a glassy starting material. These factors tend to favor
crystallization of the high-temperature form from a supercooled liquid or
glass, even in the temperature range of stability of a lower-temperature
modification.
This phenomenon has been observed in a number of systems. For
example, J. B. Ferguson and H. E. Merwin* observed that when calciumsilicate glasses are cooled to temperatures below 1125C, at which
wollastonite (CaSi0 3) is the stable crystalline form, the high-temperature
modificaton, pseudowollastonite, is found to crystallize first and then
slowly transform into the more stable wollastonite. Similarly, on cooling
compositions corresponding to Na 2 0' Ab032Si0 2 , the high-temperature
crystalline form (carnegieite) is observed to form as the reaction product,
even in the range in which nephelite is the stable phase; transformation of
carnegieite into nephelite occurs slowly.
In Order for any new phase to form, it must be lower in free energy than
the starting material but need not be the lowest of all possible new phases.
* Am.
315
This requirement means that when a phase does not form as indicated on
the phase equilibrium diagram, the liquidus curves of other phases on the
diagram must be extended to determine the conditions under which sorne
other phase becomes more stable than the starting solution and a possible
precipitate. This is illustrated for the potassium disilicate-silica system in
Fig. 7.35. Here, the compound K 2 04Si0 2 crystallizes only with great
difficulty so that the eutectic corresponding to this precipitation is
frequently not observed. Instead, the liquidus curves for silica and for
potassium disilicate intersect at a temperature about 200 below the true
eutectic temperature. This nonequilibrium eutectic is the temperature at
which both potassium disilicate and silica have a lower free energy than
the liquid composition corresponding to the false eutectic. Actually, for
this system the situation is complicated somewhat more by the fact that
cristobalite commonly crystallizes from the melt in place of the equilibrium quartz phase. This gives additional possible behaviors, as indicated
by the dotted line in Fig. 7.35.
Extension of equilibrium curves on phase diagrams, such as has been
1400,---,-----,------------.,---------,
1300
1200
Liquid
__ Cristobalte
1100
.2
1000
Liquid
+ Tridymite
E
Ql
900
1-
800
700 600
500 L_----I
56
60
K zO2SiO z
Fig.7.35.
wstem.
Liquid
"',
+ Quartz
..
~:
I :
I :
I :
I :
I :
Quartz + KS 4
--l-....L.._ _...-L
70
80
K zO'4SiO z
Weight per cent SiO z
.L..-_ _----I
90
100
SiO z
316
INTRODUCTION TO CERAMICS
shown in Fig. 7.35 and also in Fig. 7.5, provides a general method of using
equilibrium data to determine possible nonequilibrium behavior. It pro
vides a highly useful guide to experimental observations. The actual
behavior in any system may follow any one of several possible courscs,
so that an analysis of the kinetics of these processes (or more commonly
experimental observations) is also required.
Incomplete Reactions. Probably the most common source of non
equilibrium phases in ceramic systems are reactions that are not como
pleted in the time available during firing or heat treatment. Reaction rates
in condensed phases are discussed in Chapter 9. The main kinds of
incomplete reactions observed are incomplete solution, incomplete solido
state reactions, and incomplete resorption or solid-liquid reactions. AII of
these arise from the presence of reaction products which act as barrier
layers and prevent further reaction. Perhaps the most striking example of
incomplete reactions is the entire metallurgical industry, since almost al!
metals are thermodynamically unstable in the atmosphere but oxidize and
corrode only slowly.
A particular example of incomplete solution is the existence of quartz
grains which are undissolved in a porcelain body, even after firing at
temperatures of 1200 to 1400C. For the highly siliceous liquid in contact
with the quartz grain, the diffusion coefficient is low, and there is no fluid
flow to remove the boundary layer mechanically. The situation is similar
to diffusion into an infinite medium, illustrated in Fig. 6.5. To a first
approximation, the diffusion coefficient for SiO z at the highly siliceous
boundary may be of the order of 10- 8 to lO-o cmz/sec at 1400C. With these
data it is left as an exercise to estimate the thickness of the diffusion layer
after 1 hr of firing at this temperature.
The way in which incomplete solid reactions can lead to residual
starting material being present as nonequilibrium phases will be clear
from the discussion in Chapter 9. However, new products that are not the
final equilibrium composition can also be formed. For example, in heating
equimolar mixtures of CaC0 3 and SiO z to form CaSi0 3 , the first product
formed and the one that remains the major phase through most of the
reaction is the orthosilicate, CazSiO. Similarly, when BaC0 3 and TiO z are
reacted to form BaTi0 3 , substantial amounts of BazTiO., BaTi 3 0 7 , and
BaTi.O o are formed during the reaction process, as might be expected
from the phase-equilibrium diagram (Fig. 7.20). When a series of intermediate compounds is formed in a solid reaction, the rate at which each
grows depends on the effective diffusion coefficient through it. Those
layers for which the diffusion rate is high form most rapidly. For the
CaO-SiOz system this is the orthosilicate. For the BaO-TiOz system the
most rapidly forming compound is again the orthotitanflte, BazTiO.
317
Fig.7.36. Nonequilibrium crystallization path with (1) Liquid -> A, (2) A + iquid -> AB, (3)
Liquid->AB, (4) Liquid->AB+B, (5) Liquid->AB+B+C.
Suggested Reading
\. E. M. Levin, C. R. Robbins, and H. F. McMurdie, Phase Diagrams for
Ceramists, American Ceramic Society, Columbus, Ohio, 1964.
2. E. M. Levin, C. R. Robbins, H. F. McMurdie, Phase Diagrams for Ceramists,
1969 Supplement, American Ceramic Society, Columbus, Ohio, 1969.
3. A. M. Alper, Ed., Phase Diagrams: Materials Scence and Technology, Vol. 1,
"Theory, PrincipIes, and Techniques of Phase Diagrams," Academic Press,
lnc., New York, 1970; Vol. Il, "The Use of Phase Diagrams in Metal,
Refractory, Ceramic, and Cement Technology," Academic Press, lnc., New
318
York, 1970; Vol. III, "The Use of Phase Diagrams in Eleetronie Materials and
Glass Teehnology," Aeademie Press, Ine., New York, 1970.
4. A. Muan and E. F. Osborn, Phase Eqllilibria among Oxides ill Steelmakillg,
Addison-Wesley, Publishing Company, Ine., Reading, Mass., 1965.
5. A. Reisman, Phase Eqllilibria, Aeademie Press, Ine., New York, 1970.
6. P. Gordon, Principies of Phase Diagrams ill Materials Systems, MeGraw Hill
Book Company, New York, 1968.
7. A. M. Alper, Ed., High Temperature Oxides, Part 1, "Magnesia, Lime and
Chrome Refraetories," Aeademie Press, Ine., New York, 1970; Part n,
"Oxides of Rare Earth, Titanium, Zireonium, Hafnium, Niobium, and Tantalum," Aeademie Press, Ine., New York, 1970; Part 111, "Magnesia, Alumina,
and Beryllia Ceramies: Fabrieation, Charaeterization and Properties,"
Aeademie'""Press, Ine., N ew York; Part IV, "Refraetory Glasses, GlassCeramies, Ceramies," Aeademie Press, New York, Ine., 1971.
8. J. E. Rieei, The Phase Rule and Heterogeneolls Eqllilibrillm, Dover Books,
New York, 1966.
7.4.
7.S.
7.2.
A power failure allowed a furnace used by a graduate student working in the K,OCaO-SiO, system to cool down over night. For the fun of it, the student analyzed the
composition he was studying by X-ray diffraction. To his horror, he found ,B-CaSiO"
2K,OCaO3SiO" 2K,OCaO6SiO" K,O3CaO6SiO" and K,O2CaO6SiO, in his
sample.
(a) How could he get more than three phases?
(b) Can you tell him in which composition triangle his original composition was?
(e) Can you predict the minimum temperature aboye which his furnace was
operating before power failure?
(d) He thought at first he also had sorne questionable X-ray diffraction evidence for
K,O'CaO'SiO" but after thinking it over he decided K,OCaOSiO, should nol
crystallize out of his sample. Why did he reach this conclusion?
7.6.
(a)
Cooled rapidly
(b)
You have been assigned to study the electrical properties of calcium metasilicate
by the director of the laboratory in which you work. If you were to make lhe
material synthetically, give a batch composition of materials commonly obtainable in
high purity. From a production standpoint, 10% liquid would increase the rate of
sintering and reaction. Adjust your composition accordingly. What would be [he
expected firing temperature? Should the boss ask you to explore the possibility of
lowering the firing temperature and maintain a white body, suggest the direction lo
procede. What polymorphic transformations would you be conscious of in working
with the aboye systems?
Are all these observations self consistent? How do you explain them?
Triaxial porcelains (flint-feldspar-clay) in which the equilibrium phases at the firing
temperature are mullite and a silicate liquid have a long firing range; steatite porcelains
(mixtures of talc plus kaolin) in which the equilibrium phases at the firing temperature
are enstiatite and a siJicate liquid have a short firing range. Give plausible explanations
for this difference in terms of phases present, properties of phases, and changes in
phase composition and properties with temperature.
7.7.
7.8.
According to Alper, McNally, Ribbe, and Doman,* the maximum solubility of AI,O, in
MgO is 18 wt% at 1995oC and of MgO in MgAI,O. is 39% MgO, SI% AI,O,. Assuming
the NiO-AI,O, binary is similar to the MgO-AI,O, binary,- construct ternary. Make
isothermal plots of this ternary at 2200C, 1900C, and l700C.
Observations
(d)
7.3.
Condition
(e)
Problems
7.1.
319
7.9. The clay mineral kaolinite, AI,Si,O,(OH)., when heated aboye 600C decomposes to
AI,S,07 and water vapor. If this composition is heated to 1600C and left at that
temperature until equilibrium is established, what phase(s) will be present. If more
than one is present, what will be their weight percentages. Make the same calculations
for IS8SoC.
321
PHASE TRANSFORMATIONS
C'
k
;;
e: ~.. ,-
""Ca_
~
QJ
L; ~ I?c),dv~
-;(It:( ('rll-Vnt,
,,-~yv
320
Later
r
Final
C~ f--____,,..,--------.-----,~-----____,r_____.
o
u
Phase Transformations,
Glass Formation,
and Glass-Ceramics
Phase-equilibrium diagrams graphically represent the ranges of temperature, pressure, and composition in which different phases are stable.
When pressure, temperature, or composition is changed, new equilibrium
states are fixed, as indcated in the phase-equlbrium dagrams, but a long
time may be requred to reach the new lower-energy condtions. Ths is
particularly true in solid and liquid systems n whch atomic mobility is
limited; indeed, n many important systems equilbrum is never attained.
In general, the rate at which equilibrum s reached is just as mportant as
knowledge of the equilibrium state.
As discussed by J. W. Gibbs a century ago,* there are two general types
of processes by which one phase can transform into another: (a) changes
which are nitially small n degree but large in spatial extent and in the
early stages of transformation resemble the growth of compositional
waves . as illustrated scherrtatically in Fig. 8.1 a; and (b) changes initially
large i~ degree but small in spatial extent, as illustrated schematically in
Fig. 8.1 b. The first type of phase transformation is called spinodal
decomposition; the latter is termed nucleation and growth.
The kinetics of either type of process may be rapid or slow, depending
on factors such as the thermodynamc driving force, the atomic moblty,
and heterogeneities in the sample.
During transformation by a nucleaton and growth process, either the
nucleation or growth step may limit the rate of the overall process to such
an extent that equilibrium is not easily attained. For example, to induce
precpitation from supersaturated cloud formations, nucleation is the
stumbling block and seeding of clouds leads to precipitation in the form of
rai~-otsnow. In contrast,' on cooling a gold-ruby glass, nuclei are formed
Early
(a)
lb)
Ca f----''---''------------.1.-----'''--Early
Later
----''---------'L-
Final
Distance
------,..
Fig.8.1. Schematic evaluation of concentration profiles for (a) spinodal decomposition and
(b) nucleation and growth. From J. W. Cahn, Trans. Met. SOCo AIME, 242, 166 (1968).
during coolng but do not grow until the glass s reheated, formng the
beautful ruby color.
In the present chapter, both types of phase transformaton are discussed and applied to phase separation in glass-forming materials, unidirectional soldification, glass formation, the development of desired microstructures in glass-ceramic materials, photosensitve glasses, opacified
enamels, and photochromc glasses.
8.1
where Iv s the nucleaton rate, that s, the number of new particles which
form per unit volume per unit time. If the growth rate per unit area of the
interface, u, is assumed isotropic (independent of orientation), the transformed regions are spherical in shape. If u is then taken to be independent
of time, the volume at time t of the transformed material which originated
INTRODUCTION TO CERAMICS
322
'
t
PHASE TRANSFORMATIONS
"
at
is
(8.2)
During the initial stages of the transformation, when the nuclei are widely
spaced, there should be no significant interference between neighboring
nuclei, and ya = Y, the volume of the sample. Hence the transformed
volume at time t resulting from regions nucleated between 7 and 7 + dt is
dy f3
= N, y! = 4 7T Ylvu 3 (t
3
7)3
dt
(8.3)
f3
47T ('
-V =""3 Jo
1 u 3(
v
t-
)3 d
(8.4)
7."
~ = 1Ivu3t4
8.2
Spinodal Decomposition
(8.5)
(a)
Ibl
~=
1 - exp [ - 4 7T u 3
3
Iv(t -
7)3
d7]
(8.6)
f3
y
p [-V=1-ex
7T 1 ut
3 4]
3v
(8.7 a)
These reduce to Eqs. (8.4) and (8.5) for small fractions transformed,
where interference between growth centers isnot expected. Other
variations with time of the nucleation frequency and growth rate have
also been analyzedt and lead to expressions of the form
yf3
- = l-exp(-at") \
(di
le)
Spinodal
G
C
(8.7b)
CC'
Cc Cb Ca Ca,Cb'Cc'
C
Composition
.
C
Flg.8.2. Two-liquid immiscibility. (a) to (e) show a sequence of O'lbb f
d'
h
'
s ree energy curves
eorrespon mg to te phase dlagram shown in ({). (a) T= T,; (b) T= T,' ( ) T= T' J
T=T'(e)T-TF
TPS
d'
,.C
,.(e)
4,
,.
rom . . ewar, m Phase Diagrams Vol. 1 Academic Press [
New York, 1970.
" , ne.,
324
INTRODUCTION TO CERAMICS
PHASE TRANSFORMATIONS
= Nv
[g(C)+
(Y'C?J dV
(8.8)
rG(:~~to
o?+ K(Y'C)2] dV
(C - C
(8.9)
From Eq. 8.9, it is apparent that t.G is positive if (a 2 g/ac 2 )c >0, that
is, if C o lies outside the spinodal. In this case, the sy.stem is stable against
all infinitesimal fluctuations in composition, since the formation of such
fluctuations would result in an increase in the free energy of the systern
(t.G >0). In contrast, if (a 2g/ac 2)c.<0,corresponding to the region
inside the spinodal, t.G is negative when
(8.10)
The formation of fluctuations can be accompanied by a decrease in the
325
free energy of the system within the spinodal provided the scale of the
fiuctuations is large enough so that the gradients are sufficiently small so
Ihat Eq. 8.10 is satisfied. Hence the system is always unstable against
sorne fluctuations within the spinodal region.
In proceeding further, consider a composition fluctuation of the form
C - C o = A cos {3x
(8.11)
Substituting this in Eq. 8.9, one obtains for the change in free energy on
forrning fluctuations
t.G = A 2 [(~)
+ 2 {32]
2
ac
Co
(8.12)
The solution is then unstable (t.G < O) for all fluctuations of wave number
f3 smaller than a critical wave number {3c:
{3c
= [__
1 (~') ]1/2
2
ac
2K
(8.13a)
Co
= [ (:~)
2
]1/2
(8.13b)
From these expressions, as from Eq. 8.10, it is seen that the incipient
surface energy, reflected in the gradient energy term, prevents the
solution from decomposing on too small a scale. The m'ore negative the
factor (a 2 g/ac 2 )co' the more gradient energy can be accommodated and
stil\ have a negative t.G, and hence the smaller the scale of the continuous
decomposition which can take place. For decomposition on a scale finer
than An t.G is positive, and the solution is stable against the fluctuations.
In this case, the system might still separate into two phases, but not by the
spinodal decomposition mechanism by which the free energy of the
system continuously decreases (separation would have to take place by a
nucleation and growth process).
In summary, for compositions which lie at a given temperature within
the miscibility gap but outside the spinodal, phase separation can take
place only by a nucleation and growth process, since the formation of
infinitesimal compositional fluctuations of all wavelengths are accompanied by an increase in the free energy of the system. Such a system is
described as being metastable. Within the spinodal, the system is unstable
against compositional fluctuations on sorne sufficiently large scale, since
such fluctuations can decrease the free energy of the system. For
326
INTRODUCTlON TO CERAMICS
PHASE TRANSFORMATlONS
(8.14)
R({3)=_!VI{32[(a2~)
No
aC
+2K{32]
(8.15)
Co
32~
and
Rn - -
= V2A o
a2f )
2.1 M~ ( ac2
Co
(8.16
(8.17
Rm
t
u +
I
I
I
I
I
I
e
o
:;o
fU
o.
E
I
-----------"'1----
I
I
I
I
13m
Wave number {3
Fig. 8.3.
*See J. W. Cahn, Acta Met., 9, 795 (19'61); Trans. Met. Soco AlME, 242, 166 (1968).
Fig.8.4. A succession of computed sections lhrollgh the 50: 50 two-phase strllctllre for IDO
random sine waves. Note that aH particles are interconnected. The spacing between sections
is 1.25/{3",. From J. W. Cahn, J. Chem. Phys., 42,93 (1965).
PHASE TRANSFORMATlONS
INTRODUCTlON TO CERAMICS
328
Nucleation
(8.18)
329
I-l
w~ere
i, ~\'"
(8.19)
'Y is the interface energy and !.lG v is the free-energy change per
umt volume for the phase transition, neglecting interface energy.
For very small partieles the first term in Eq. 8.19 predominates; as the
size of an embryo (a partiele smaller than a stable nueleus) increases, the
free energy required to form it al so increases. On further growth,
however, the second term tends to predominate, so that once embryos
reach sorne critical size (Fig. 8.5), the second term predominates and
further growth leads to an increasingly lower free energy and a stabler
330
PHASE TRANSFORMATIONS
INTRODUCTION TO CERAMICS
Regions of the new phase f3 having a radius less than r* are calle,
subcritical embryos; those of radius r* and larger are called critical an,
supercritical nuclei. Nuclei generally grow larger, but those of the critic
size may grow indefinitely large or shrink back and disappear. Eithe
process decreases the free energy of the critical nucleus.
The number of molecules in a nucleus of critical size is generally in th
range of 100 molecules. This size of nucleus is much too Jarge to resul
from a single fluctuation, and the nucleation process is assumed to consis
of the addition of molecules one by one to an embryo. If it is assumed tha
the concentration of critical-size nuclei is that characteristic of equilib
rium and that all nuclei which become just supercritical grow to a larg,
size, the equilibrium rate of nucleation per unit volume (Iv)Cq may b,
written
oIL-----\---+-------j
(Iv)Cq
~
Fig.8.5.
Nucleus radius r
Free energy of nucleus as a function of size. Sorne critical size must be exceedcd
~: = exp ( - ~~r)
(8.20)
no
(8.21)
kT
-2y
r* =-I::!.G u
= vnsn *
(8.24
=
I1A
33
acp
(271"MkT) 1/2
(8.25
(8.22)
(8.27)
(8.23
332
PHASE TRANSFORMATIONS
= Vol1,110 exp
I1Hv == T o I1S v
(8.28)
Iv =
110Vo
*)
(8.30)
I1G v == - kT In 12Vil
po
(8.31)
where p .is the actual vapor pressure, po is the equilibrium vapor pressure,
and Vil IS the molecular volume of the {3 phase. Substituting this value
~nto Eq. 8.23 and substituting this in turn into Eq. 8.29, the nucleation rate
IS
Iv == lo exp [ -
333
3kT(k}f6~'Y13n p fpo)2]
(8.32)
(8.33b)
Al ternperatures not too far from T o, where I1Hv and I1S v are c10se to their
\'alues at T o, Eq. 8.33a beco mes
I1G =I1Hv (To- T)
v
To
(8.33c)
2
-16 7T'Y 3To
( I1Gm)
I == lo exp 3kT I1H}(To_ T? exp - kT
(8.34)
Since the logarithm of the supersaturation ratio (p fpo) enters into the
exponential term of Eq. 8.32 as a factor determining I1G *, the rate oC
nucleation is sensitive to the degree of supersaturation. In fact, the rate oC
nucleation is very small except as the supersaturation approaches sorne
critical value; then I changes by many orders of magnitude for srnall
changes about the critical value of the supersaturation ratio.
For nucleation in condensed phases, the free-energy change per unit
volume, I1G v , on transforming ex phase to (3 phase material can be
estimated as follows: From the definition of the Gibbs free energy
(8.33a)
where I1Hv and I1S v are respectively the differences between phases oC
the enthalpy and entropy per unit volume. At the equilibrium transforma-
where 'YSL and I1H are respectively the crystal-liquid surface energy per
atom and the heat of fusion per atom, and {3 = 1/2 for metals and = 1/3 for
nonmetals.
Heterogeneous Nucleation. The nucleation of most phase transformations takes place heterogeneously on container walls, impurity particles,
or structural imperfections. The general action of such nucleating substrates is to reduce the barrier to nucleation represented by the surface
energy. When a nucleus forms on a substrate, in addition to the creation
oC the nucleus-matrix interface, sorne high-energy substrate-matrix surface is replaced by a lower-energy substrate-nucleus surface, thereby
resulting in a smaller overall surface-energy contribution.
When a nucleus of phase {3 forms on a ~at substrate characterized by
PHASE TRANSFORMATIONS
INTRODUCTION TO CERAMICS
334
Table 8.1.
To(K)
Mercury
Tin
Lead
Aluminum
Germanium
Silver
Gold
Copper
[ronPlatinum
Boron trif!uoride
Sulfur dioxide
CCI.
H 20
C,H,
Naphthalene
LiF
NaF
NaCI
KCI
KBr
KI
RbCI
CsCI
234.3
505.7
600.7
931.7
1231.7
1233.7
1336
1356
1803
2043
144.5
197.6
250.2
273.2
278.4
353.1
1121
1265
1074
1045
1013
958
988
918
T* (K)
Matrix
flT*ITo
176.3
400.7
520.7
801.7
1004.7
1006.7
1106
1120
1508
1673
126.7
164.6
200.2::!: 2
232.7::!: 1
208.2 ::!:2
258.7::!: 1
889
984
905
874
845
799
832
766
0.247
0.208
0.133
0.140
0.184
0.184
0.172
0.174
0.164
0.181
0.123
0.167
0.202
0.148
0.252
0.267
0.21
0.22
0.16
0.16
0.17
0.15
0.16
0.17
Substrate
where
(8) =
-6.G~)
,.=K,exp ~
(8.38)
(8.39)
More generally, it should be noted that little can be said a priori about
lhe number or potency of nucleating heterogeneities associated with a
given sample of a given material. Experience wilh glass-forming liquids
has indicated that crystal nucleation almost invariably takes place at
external surfaces and sometimes but not always at interior bubble
surfaces, Nucleation at the external surfaces has been associated with
superficial condensed-phase impurities, and the nucleation sometimes
observed at interior bubble surfaces may well have a similar origino In
oxide glasses to which a nucleating agent has not been added, internal
nucleation is seldom observed, and most of the reported cases of such
nucleation have in volved heat treatment at relatively low temperatures.
The resulting crystallization is often observed in the form of rosettes and
contact angle e (Fig. 8.6), the free energy of forming a critical-size cluster
having the shape of a spherical cap is given by
6.G~ = 6.G*f(8)
where
33!
(S36)
(S3?)
elongated striae and may often be associated with nonuniform concentrations of impurities in the melt.
When many glass-forming materials are cooled into the glassy state and
then reheated to a temperature T between the glass transition and the
melting point, copious crystallization is frequently observed. In contrast,
when a sample of the same material is cooled directly to T from a
temperature aboye the melting point, the sample may remain free of
visible crystallization for an extended periodo The origin of this difference
in behavior can be associated with nuc1ei which form during cooling and
reheating in the first type of heat treatment. In no case has it been
established whether such nuc1eation is homogeneous or heterogeneous.
The ability to produce large densities of internal nuc1ei in glass-forming
liquids by the addition of selected nuc1eating agents to the melt has
important applications in forming glass-ceramic materials, as well in
producing glazes and enamels having desired degrees of crystallinity. This
is discussed in Sections 8.6 and8.8.
8.4
Crystal Growth
1967.
337
PHASE TRANSFORMATIONS
INTRODUCTION TO CERAMICS
336
..
(10) tace
Low
entropy
change
High
entropy
change
Fig. 8.7. Calculated interface profiles for (10) and (11) faces of a two-dimensional crystal,
showing the effects of cntropy change on interface structurc. From K. A. Jackson, prvate
communication.
PHASE TRANSFORMATIONS
INTRODUCTION TO CERAMICS
338
339
expressed
(8.40)
where u is the growth rate per unit area of the interface, v is the
frequency factor for transport at the crystal-liquid interface, ao is the
distance advanced by the interface in a unit kinetic process, approximately a molecular diameter, and !1G is the free-energy change accompanying crystallization. As indicated by Eq. 8.33, !1G may be taken as
proportional to the undercooling. The frequency factor v may be expressed by Eq. 8.27 or by the alternative form
v
where
1)
kT
(8.41)
= 37Tao3 1)
is the viscosity.
Crack in glass
-20;._-&-Nonfaceted interface
Original polished surface
(6)
For small departures from equilibrium (!1G ; kT), this model predicts
a linear relation between growth rate and driving force or undercooling.
For large departures from equilibrium (!1G ~ kT), the model predicts
a limiting growth rate
U -?
lt~
vao
(8.42)
This limiting growth rate for fluid materials is calculated to be in the range
cf 101 cm/seco
For the normal growth model to correspond to reality, the interface
must be rough on an atomic scale and be characterized by a large fraction
()f step sites where atoms can preferential1y be added and removed.
340
INTRODUCTION TO CERAMICS
2. .SCREW l?ISLOCATION
G~OWTH.
PHASE TRANSFORMATIONS
a~ded
u
(8.43)
u = vao [ 1 - exp ( -
~?) ]
(8.441
(e)
(d)
(e)
Fig: 8.~. (a) Step attached lo Ihe emergence poinl P of a dislocation with a Burgers veclor
whlch IS not parallel to the surface. The step height h = 6 . lJ, where lJ is the unit normal on lhe
surface. (h) to (e) Under the intluence of supersaturation the step in Ca) winds up into a spiral
centered on P.
341
Av exp ( __B_)
TT
(8.45)
The exponential constant B depends on the model used in the analysis but
in all cases is proportional to the square of the edge surface energy of the
Iwodimensional nucleus.
The growth rate predicted by Eq. 8.45 should vary exponentially with
driving force and for a small driving force should be unobservably low.
For the model to correspond to reality, the interface must be smooth on
an atomic scale and must also be perfect (free of intersecting screw
dislocations).
CrystaJ Growth froro Vapor or DJute Solution. When atoms are
3dsorbed from the vapor on a crystal-vapor interface, they diffuse a
considerable distance across the surface before they reevaporate. If a
diffusing atom reaches a step, it is relatively tightly held, and the step
moves across the surface; as growth proceeds, the step finally reaches the
edge of the crystal. When this happens, the step is eliminated, and in a
perfect crystal it is necessary to nucleate an additionallayer for growth to
proceed. The growth kinetics expected for this case are given by Eq. 8.45.
Experimentally it is found that the growth of crystals from the vapor
phase often occurs at measurable rates, even at low values of supersaturation. This has been associated with growth taking _place at steps
provided by screw dislocations intersecting the interface.
A variety of spiral growth forms, suggestive of screw dislocation
growth, has been observed. An example is shown in Fig. 8.10. Growth
spiraJs frequently have the same symmetry as the face on which they are
growing. Double growth spirals, similar in appearance to Frank-Read
sources, are often observed. The step heights in many studies in which
spiral growth forms are observed are estimated to be of the order of
mierons 01' larger. The origin of such large step heights remains to be
satisfactorily explained.
The rate of growth of crystals from dilute solutions 01' the vapor phase
isdetermined by the rate of forming steps on the surface and by therate
PHASE TRANSFORMATIONS
343
u
R
Fig. 8.10. Growth spiral on cadmium iodide crystals growing from water solution.
Interference contrast micrograph at 1025 x. Courtesy Dr. K. A. Jackson. Bell Telephonc
Laboratories.
. 342
==
ll~
-[l-exp(-..O/kT)]
(8.46)
Provided only that the transport process at the interface varies with
temperature in the same way as the viscosity (v rx l/~), the UR versus .. T
relation should represent the temperature dependence of the interface site
factor. For normal (rough surface) growth, this relation would be a
horizontal line (see Eqs. 8.40 and 8,41); for screw dislocation growth, a
line of positive slope (see Eqs. 8,43, 8,44, and 8,41); and for surface
nucleation growth, a concave upward curve (see Eqs. 8,45 and 8.41). In
the last case a plot of log (u~) versus l/T..T should be a straight line of
negative slope (see Eqs. 8,45 and 8,41) .
344
-<i-
INTRODUCTION TO CERAMICS
1100
300 I
__ Temperature
1100
1000
900
(OC)
Temperature (
Cl
800
900
I
1000
700
800
Q)
700
V>
E
u
Q)
V>
-5.0 -
8.
200
o
o
1-
s=
~
o
100 1-
"O
U' -6.0
Q)
Q)
:::J
"O
V>
Q)
a:
-S
O I
:::J
016
-'
116
216
316
Undercooling
(a)
416
(oCl
-7.0
2
- 8.0 '---!..--'-_.....L_...L-_-L-_.L.....---''-----'_--'
Undercooling, t:.1' (OCI
Fig.8.11. Growth ratc versus undercooling relatioll for GcO,. From P. J. Vergano and D. R.
Uhlmann, Phys. Chelll. Glasses, 11,30 (1970).
Q)
V>
'-
:;:
Materials with small entropies of fusion such as Ge02 grow and melt
with nonfaceted interface morphologies (see Fig. 8.8b); their growth rate
anisotropy is smal\. As shown in Fig. 8.12a, the forms of their .crystallization and melting kinetics are those predicted by the normal growth model
(Eq. 8,40), and their rates of crystallization and melting, corrected for the
variation of viscosity with temperature, are equal at equal small departures from equilibrium (Fig. 8.12b). In contrast, material s with large
entropies of fusion such as Na202Si02 have faceted interface morphologies in growth (see Fig. 8.8a) and nonfaceted morphologies in
melting; their growth rate anisotropy is large. The forms of their crystallization kinetics are not well described by Eq. 8,44 or 8,45 (see Fig. 8.13a),
and pronounced asymmetry is observed in their rates of crystallization
and melting in the vicinity of the melting point, with melting taking place
more rapidly than growth at equal small departures from equilibrium (Fig.
8.13b ).
ol-...:--------~""_:_---------__i
'0
o.
-1
Reducton state
X = 2 X 10- 5
X =' 4 x 10- 7
1),
-2
1095
(b)
1100 1105
1110
1115 1120
Temperature
1125
1130
1135
(oC)
Fig.8.12. (a) Reduced growth rate versus undercooling relation for GeO,. From. P. J. V er~ano
and D. R. Uhlmann, Phys. Chem. Glasses, 11, 30 (1970). (b) Growth and meltlOg rate tl~es
viscosity versus temperature relation for GeO, glasses having different states of reductlOn,
represented by x in GeO,_,. From P. J. Vergano and D. R. U hlmann, Phys. Chem. Glasses, 11,39
(1970).
20 ...---------,---.,-----,-----,---,----,-----,
~
u
5: 16
-..
E
<D
12
::lO:
~
..c:
6:0
-a
a.>
u
:J
-a
a.>
o::
40
80
120
160
200
240
Undercoating ("C)
(al
30
PHASE TRANSFORMATIONS
8.5
Glass Formation
13
7r
v=}
lb)
Fig.8.13. (a) Reduced growth rate versus undercooling relation for Na202Si02. (b) Melting
rate and crystallization rate of Na202Si02 in the vicinity of the melting point. From G. S.
Meiling and D. R. Uhlmann, Phys. Chem. Glasses, 8, 62 (1967).
"ti
346
347
348
INTRODUCTION TO CERAMICS
PHASE TRANSFORMATIONS
100 ,--.,--,--,---.----,---_,..-_--,_-,
,;:: 200
O()
.'0
"'6
o
~
Q)
"O
e
::::>
300
Time (sec)
Fig.8.14. Calculated T - T- T curve for Na,O2SiO, for volume fraction crystallized of lO-6.
Curve constructed from calculated nucleation rates and the growth rate and viscosity data of
G. S. Meiling and D. R. Uhlmann, Phys. Chem. Glasses, 8, 62 (1967).
The nose in a T-T-T curve, corresponding to the least time for the
given volume fraction crystallized, results from a competition between
the driving force for crystallization, which increases with decreasing
temperature, and the atomic mobility, which decreases with decreasing
temperature. The cooling rate required to avoid a given fraction crystallized may be roughly estimated from the relation
(8.47)
where !1 T., = T o - TN , TN is the temperature at the nose of the T -T - T
curve, and T n is the time at the nose of the T -T -T curve. More accurate
estimates of the critical cooling rate for glass formation may be obtained
by constructing continuous cooling curves from the T -T -T curves,
following the approach outlined by Grange and Kiefer. *
From the form of Eq. 8.5 it is apparent that the critical cooling rate for
glass formation is insensitive to the assumed volume fraction crystallized,
since the time at any temperature on the T -T -T curve varies only as
(Vil / V)114.
349
is almost never available, and for only a few cases of interest are adequate
data available on the variation of growth rate with temperature. In nearly
all cases, therefore, it is necessary to estimate the nueleation frequency.
In estimating nueleation frequencies, !1G * is generally taken as 50 to
60 kT at a relative u ndercooling !1 T / T o of 0.2, in accordance with
experimental results on a wide variety of materials. In estimating the
growth rate when data are not available, a normal growth model (rough
surface) (Eq. 8.40) can be assumed for materials having smaIl entropies of
fusion, and a screw dislocation growth model (Eq. 8.44) for materials
characterized by large entropies of fusiono
The analysis can readily be extended to inelude time-dependent growth
rates such as those characteristic of diffusion-controIled growth, as weIl
as h~terogeneous nucleation in bulk liquid or at external surfaces. Such
nueleation is ineluded by replacing Iut in the various relations with N v , the
number of effective heterogeneous nuelei per unit volume. This la~t
quantity has in general a significant temperature dependence, as nueleating particles of different potency become active in different ranges of
temperature. In cases in which the nuclei are primarily associated with the
external surfaces or with the center line of a glass body, a criterion of
minimum observable crystal size may be preferable in sorne applications
to the present criterion of minimum detectable fraction crystallinity.
The effects of nueleating heterogeneities can be explored with the
model of a spherical-cap nueleus (Fig. 8.6). The number of nueleating
heterogeneities per unit volume characterized by a given contact angle e
can be estimated as foIlows: Experiments on a variety of materials,
discussed in Section 8.3, indicate that division of a sample into droplets
having sizes in the range of 10 microns in diameter is sufficient to ensure
that most droplets, perhaps 99%, do not contain a nucIeating heterogeneity. These results indicate a density of nueleating particles in the range
of 10' per cubic centimeter. Using this value together with an assumed
heterogeneity size (e.g. 500 A), one can obtain the total areaof nueleating
surface per unit volume.
The nueleation rate associated with heterogeneities is then obtained .
with Eqs. 8.36 to 8.39. The effect of the contact angle of nueleating
heterogeneities on glass formation may be evaluated by calculating
T-T-T curves for different e's. Typical resuIts, for Na2 02Si0 2 , are
shown in Fig. 8.15, in which !1G' has been taken as 50 kT at !1 T / T o = 0.2.
As seen there, heterogeneities characterized by modest contact angles
(e:5 80) can have a pronounced effect on glass-forming ability;
heterogeneities characterized by large contact angles (e 2 120) have a
negligible eifect.
Similar calculations have been carried out for a variety of materials,
INTRODUCTION TO CERAMICS
350
PHASE TRANSFORMATIONS
10GOr----,---,-----,---,----,
990
.....
o
.....
I
I
....
.. ..
'
.. '
.. ' ..' ..'
'
Q)
::J
Q)
g-
"
... ...
920
\
\
\:.
850 '--_-'--...lL
-2
-'-_ _---'
14
10
18
inc1uding oxides, metals, organics and water, which indicate that nuc1ealing heterageneities with () > 90 to 100 quite generally have a negligible
effect on glass-forming ability. Table 8.2 compares the critical cooling
rates estimated, assuming only homogeneous nucleation, and those
estimated with 109 heterageneities per cubic centimeter, SOO in size, all
characterized by a contact angle of 80. The results shown in the table for
water and particularly the metal are subject to considerable uncertainl}'
because the viscosity data had to be extrapolated over a wide range lo
carry out the calculations. The results indicate that it is highly unlikely,
with or without heterageneities, that apure metal can be formed as a glass
by cooling fram the liquid state.
The effects on glass formation of changes in the barrier to nuc1ealion
are also shown in Table 8.2, in which critical cooling rates are compared
Material
Na2 02Si0 2
Ge02
Si0 2
Salol
Metal
H 20
for t:J.O = SO kT and t:J.O = 60 kT at t:J. TITo = 0.2. As seen there, these
efTects can also be substantial. When the calculated rates for various
oxides are compared with experience in the laboratory, the difficulty of
forming glasses is generally overestimated by assuming t:J.O = 50 kT at
j. TITo = 0.2. That is, the calculated cooling rates, even neglecting nuc1eating heterageneities, are consistently too high. Reasonable agreement
between calculated rates and laboratory experience can be obtained by
laking somewhat larger values for t:J.O (in the range of 60 to 65 kT at
j.TITo=0.2).
-'--_ _-'-
loglo, time
Fig. 8.15. T- T- T eurves for Na2 0'2SiO, showing effeets of nucleating heterogeneities.
Volume fraetion erystallized = 10--<>. - - , eontaet angle = 40; -----, eontaet angle = 80';
......... , homogeneous nucleation or eontaet angle = 120 and 160. From P. Onorato and D. R.
Uhlmann.
Table 8.2.
351
dT/dl (OK/see)
Homogeneous nucleus
tlO" = 50kT T, = 0.2
dT/dl (OK/see)
Heterogeneous nucleus
0=80
tlO' = 50kT T, = 0.2
dT /dl (OK/sec)
Homogeneous nucleus
tlO" = 60kT T, = 0.2
4.8
1.2
7 x 10. 4
14
1 x 10'0
1 X 107
46
4.3
6 x 10"
220
2 x 10'0
3 X 107
0.6
0.2
9 x lO"
1.7
2 x 109
2 x 106
353
PHASE TRANSFORMATIONS
INTRODUCTION TO CERAMICS
352
Liquid
'"'~
Q)
Q)
Q)
Q)
k - C
a-
ce<
Ca
C~
Most solutes in most systems are less soluble in the crystal than in liquid,
and for these ka is less than unity (see the solidus and liquidus curves in
Composition
Fi~ .. 8.16. Free energy .ver:us composition relation for solutions (schematic), showing
dnvlng force for crystal1Jzatlon (.6.G o) and driving force for nucleation (.6.G o ).
(8.49)
CL
(8.48)
Hence, the driving force for nucleation is given by the difference between
the tangent line drawn.t? Ca a~d the free-energy curve of the phase being
fo.rmed at th~ ~omp~sltlOn of mterest. If the nucleus is assumed to form
wlth composltlon C , the formalism of Section 8.3 may be used directly
with A.G v given now by Eq. 8.48 and na replaced by the number
clustenng molecules per unit volume.
~or m?~t ~aterials other than the familiar oxide glasses, the presence
of lmpun.tl~s IS expected to decrease the rate of crystallization, since part
of the ~rlV1.ng forc~ must be used in the diffusional process required for
cr~stalhzatlOn or smce the preferred growth sites onthe interface can be
pOlsoned by the impurities. High-entropy-of-fusion materials should be
more sensitive to impurity effects than low-entropy-of-fusion materials.
In cont.ras.t, impurities, including atmospheric impurities and departures
from stOlchlOmetry, can appreciably inerease the grwth rate in many
oi
Fig. 8.17).
For cases in which convection in the liquid can be neglected, the
impurity distributions in the crystal and liquid can be estimated for
different stages of growth. This is shown schematically in Fig. 8.18 for the
ease of constant growth rate in which ka is less than unity and Eq. 8.49
pertains, that is, in which the interface is at the solidus temperatu~e for
the local compositions CL and C. For an initial impurity concentratlOn of
Ca in the liquid, the crystals first formed shou1d have a concentration of
kaC . Under conditions of steady-state growth, the concentration in the
o
liquid at the interface should be Col ko and that in the crystal Co.
Liquid
Solid
el
.3ro
.3
lj
a.
Q)
1-
a.
Q)
Q)
1-
o
Solute concentration
(a)
Distance
(b)
8 17 (a) Solidus and liquidus curves and (b) tendency for constitutional supercooting.
F Ig. .
PHASE TRANSFORMATIONS
INTRODUCTION TO CERAMICS
354
e
.~
ro
.t-
:\
1 \
I \
ca
c-
~ ko
:\
Concentration
:\~profile in liquid
: \ ahead of interface
\ Ca
koco'~~2--.l.
-ot
I
:
"
-i
---l
---L~
L
- - Olstance-----"'"
355
INTRODUCTION TO CERAMICS
356
PHASE TRANSFORMATIONS
357
1050
1000
950
~
ID
.aro
ID
o.
900
ID
f-
850
800
750
-1.5
-0.5
+0.5
+ 1.0
+ 1.5
2.5,---------,------..,.------------,,--------,---
2.0
E
,5. 1.5
..c
Qo
e
ro
1.0-
0.5 -
O
0~~~2~~~4===6C=:J8===110==:l==~==::-J18
Time (hr)
Fig.8.19. (a) Growth of devitrite erystals in a glass of eomposition 17Na,O-12CaO-2AI,O,69SiO, showing the etIeets of time and tempera tu re.
Fig. 8.19 (continued) (b) Rate of growth of devitrite erysta1s in the same glass as shown in
Fig. 8.19a. From H. R. Swift, J. Am. Ceram. Soc., 30, 165 (1947).
INTRODUCTION TO CERAMICS
358
1700
-3
..
~
._._
//iM~
.~5%
-4
/'
Q)
'? -5
. .
/
I;-~
1500
15%
Liquid
....-
1400
./ . . ..;O~( "--''
!::!
30%
1/
/..
/! ,.,
/300
..... ,,'
'. ,
/.'
.. \
r'
1200
(j' . . . ,
-7
Crislobalile
liquid
1600
/'
"/
\ 2 Na~O SiO~
NazO \
+ liquid \
liquid
Tridymite
+ liquid
1100
1000
Sodium siJicales
- 8 l...--"_-'-_-'-_...l-_.L.-_.L-_'---"_-'-_--'
5
6
7
8
9
10
11
12
13
14
15
900
867'
800
Fig. 8.20. Cryslallizalion rale versus lemperature for various Na20-Si02 eompositions.
Compositions indieated in mole pereent Na20. From G. W. Seherer, Se.D. thesis, MIT, 1974.
700
*J.
80
90
100
SiO z
Fig. 8.21. Phase diagram for the system Si0 2-2Na 20Si0 2. From F. C. Kraeek, J. P/zys.
Chem., 34, 1588 (1930), and J. Am. C/zem. Soc., 61, 2869 (1939).
.
28.0
24.0
o
20.0
"'"
16.0
12.0
8.0
20
40
60
Fig. 8.22. Redueed growth rate versus undereooling relation for the erystallization of
Na,O3Si02from a melt of the same eompostion. From G. Seherer, Se.D. thesis, MIT, 1974.
359
360
INTRODUCTION TO CERAMICS
PHASE TRANSFORMATIONS
_D(Co-C,)
I-C..
-B
(8.50)
-5
Q)
Vl
......
E
!:! -6
00
.9.
-7
..
........
-8
70;:;;O~-'--~;;;--l---;:;;;--;;-----L----;1-;!OO;::O:--L.-~11:L:O-:-O-l-l--:-2LOO_L----l1300
Temperature oCI
Fig: 8.23. Variatio~ of growth rate with temperature for O.lOK,O-O.90SiO, composition.
Solid curve ~ experImental data; dotted curve = predictions of Eq. 8.50. From O. Scherer
Sc.D. thesis, MIT, 1974.
'
to.
II
361
with results which agree well with experimental data under conditions in
which the growing dendrites are in fact isolated. An approximate analysis
by G. Scherer* provides improved agreement with experimental results
for the more common case in which the dendrites are growing in the
presence of neighbors. In this case, the effects of overlapping diffusion
fields from neighboring dendrites must be incIuded in the analysis.
In most studies of crystallization from silicate liquids, it is found that
lhe growth rate becomes negligible at a temperature about 300 to 500C
below the liquidus. For most commercial gIasses, this temperature is
aboye the annealing range, and when the glasses are heId at temperatures
aboye the transi.tion range for long periods of time, crystallization
(devitrification) takes place.
Crystalline Glazes. Glassy silicates are often used as glazes for
ceramie bodies and as porcelain enamels on iron and aluminum. The
compositions of sorne of these have been given in Table 3.4. They are
usually prepared from presmelted frit plus sorne cIay and other constituents as null additions that assist in forming a stable suspension and
give good properties for smooth application. Lead glasses are particularly
low-melting; additions of calcium fluoride also contribute to low-melting
systems. In art ceramics it is sometimes desirable to prepare glazes having
a controlled crystalline conten!.
Mat glazes are those in which crystals are formed during heat treatmen!. The crystalline products are usually anorthite, CaOAIzO J 2SiOz, or
wollastonite, CaOSiO z. These glazes characteristically have a higher
oxygen-silicon ratio than the cIear glazes which do not crystallize on
cooling. Many can be formed as cIear glazes without the precipitation of a
crystal phase by overfiring and nipid cooling. For a fixed alkali and
alkaline earth content, the ratio of AIzO J to SiOz determines whether a
porcelain glaze is clear (Fig. 8.24).
The liquid phase which forms at the firing temperature during vitrification of cIay and triaxial porcelain compositions (cIay-flint-feldspar) has a
sufficiently high oxygen-silicon ratio to form a glassy phase on cooling. In
contrast, steatite compositions, particularly those with barium carbonate
as an added flux, form a more fluid Iiquid phase at the firing temperature
and frequently precipitate at least sorne crystalline phases on cooling.
There is usually a residual glassy matrix, however. Similarly, the liquid
phase present during the firing of basic refractories also normally
crystallizes on cooling or during the firing process.
For mat glazes the crystals should be uniform in size and relatively
smal\. For other effects large crystals are desirable. One of the systems
*Op. cit.
INTRODUCTION TO CERAMICS
362
PHASE TRANSFORMATIONS
363
1300,----,---,-----,----,-----'--...,...-........,----r---,
.~
O.S
E1100
00.6 -
'"
Growth rate
::'
~ 1000
Vl
;;
'"
~ 0.4
o.
'"
1--
900
Nucleation rate
0.2
SOO
o L...L~-l_L--L.-L-:--L-~-L--;-I;:;--.L--:
o
2.4
3.6
4.S
6.2
7.0
Moles SiO z
Fig. 8.24. Porcelain glaze field for constant RO (O.3K,O-O.7CaO) and variable SiO, and
AI,O] fired at cone 11, 1285C. From R. T. Stull and W. L. Howat, Trans. Am. Ceralll. Soc., 16,
454 (1914).
700
I
I
20
30
40
50
60
70
SO
Nucieation rate (nr/hr/mm Z )
Crystal growth rate (mm / hr)
Fig. 8.25. Nucleation rate and growth rate of crystals in a glazc composition suilable for
growing largedecorative crystals. From F. H. Norton,J. Am. Ceram. Soc., 20,217 (1937).
10
364
INTRODUCTION TO CERAMICS
The metal part is then fired at temperatures in the range of 700 to 900'C
During firing, the frit partic1es f10w together to form a coherent glass, alld
because the solubility of Ti0 2 in these glasses decreases significantly wilh
decreasing temperature, there is a high supersaturation at the firing
temperature, and much of the Ti02 crystallizes as a fine-grained precipi.
tate.
Sorne typical enamel compositions have beeh given in Table 3.01.
Because of the relative positions of the nucleation and growth curves a~
functions of temperature, it is desirable to fire the enamel at a lo\\'
temperature for which the nuc1eation rate is rapid and the growth rale ij;
low in order to obtain the fine-grained dispersion of titania particles mo..l
effective as an opacifier.
For forming opal glasses it is more common to add phosphates or
f1uorides as the opacifying agent. Like Ti0 2 , sodium f1uoride, which is
formed in f1uoride opals, has an appreciable solubility at the me1ting and
working temperatures, but this solubility decreases rapidly as the temperature is lowered. After forming as a glass, reheating into the nucleation
and growth range aIlows the formation of NaF nuc1ei at a temperalure al
which the growth rate is low so that a fine dispersion can be obtained. This
gives the maximum light scattering, resuIting in the formation of desirable
optical characteristics. The high degree of supersaturation at the nuc1eation and growth temperature frequently produces dendritic snowflake
crystals.
8.7
PHASE TRANSFORMATIONS
365
Pholosensitive Glasses. Photosensitive glasses can be made by sub:lJIilUling an optical sensitizer (cerium ions) for the reducing ion s present in
Ill(lrmal ruby glasses. These glasses are colorless and transparent when
Ilbey are first made and cooled to room temperature. Exposure to
Iil!lraviolet light or X-rays results in the absorption of photons by the
4
j.ensitizing cerium ions converting the Ce3+ to Ce +:
Ce3+ + hv ~ Ce 4 + + e-
(8.51)
INTRODUCTlON TO CERAMICS
PHASE TRANSFORMATIONS
normal state the molecules have one color (or perhaps are colorless); 00
exposure to light or other radiation of the appropriate wavelength range,
they switch to a second state in which they exhibit a second color; and 00
removal of the light they revert to the original state.
Although photochromic materials have a variety of applications, particularly in the opthalmic area, most suffer from fatigue when subject to
repeated light-and-dark cycling. This fatigue usualIy results from ao
irreversible chemical reaction between theactive species produced in the
photochemical process and water or oxygen or other chemicals present in
the material.
Problems associated with such fatigue can be avoided with photochromic glasses. Their photochromic properties result from smalI, dispersed crystals of sil ver halides which form during the initial cooling oC
the glass or on subsequent heat treatment at temperatures between the
strain and softening points of the host glass. These sil ver halide particIes
may contain s'izable concentrations of impurities such as alkali ions which
are present in the glass, and the photochromic behavior is affected
significant!y by both the composition and thermal history of the glass.
The base glasses are usualIy alkali borosilicates; the concentration oC
sil ver is between 0.2 and 0.7 wt% for the commercialIy important transparent glasses and between 0.8 and 1.5% for opaque glasses. The halogen
may be Cl, Br, or 1 or combinations thereof and is usualIy added in
concentrations of a few tenths of a weight percent. Also added to the
batch are smalI concentrations, of the order of 0.01 wt%, of a sensitizer,
most notably CuO, which significantly enhances the sensitivity and
increases the photochromic darkening. The Cu ions serve as hole traps
and prevent the recombination of holes and electrons produced on
exposure to the light. In typical cases, the sil ver halide particles may have
an average diameter in the range of 100 and are formed with an average
spacing between particles of about 500 to 800 , corresponding to a bulk
concentration of particles between 10 15 and 10 16 per cubic centimetcr.
The wavelengths which cause darkening depend primarily on the halide
particles present. Glasses containing AgCl particles are sensitive to the
violet and ultraviolet; that is, they darken when exposed to such radiatioo.
Additions of Br or I generally shift the sensitivity toward longer
wavelengths. In addition to the darkening process which occurs on
exposure to sensitizing radiation, bleaching processes, both optical and
thermal, also occur. The steady-state degree of coloration achiev'ed for a
given temperature and light intensity results from a competition between
the darkening and bleaching processes.
The kinetics of both darkening and clearing of a given glass are
generalIy slower than those needea for the establishment of steady-state
366
367
6 r-----,..----~---~
_
Light off
~~
.g 4
oc;
>-
ro 2
'"
C.
o 1
o'-o
L -_ _-'==-:.:-:...:-=:-=-:...:-=.
10
0.5
1.5
Min
(al
8 r-----,----,-----,---,
I
I
,;'."
~~
/
(
/
I
1-
/}
1\
I
"-
"-
",,49C
"
....................
I
1
--..
-
I
I
I
I
OL -_ _- - 'I
O
0,5
--.l
1.0
Min
lb)
--.l--l
1.5
368
the emulsion, the glass prevents loss of halogen from the silver halidc
particles).
8.8
PHASE TRANSFORMATIONS
INTRODUCTION TO CERAMICS
Glass-Ceramic Materials
369
fforce for crystallization in cases in which no such driving force exists for
ae homogeneous solution. Of these possibilities, the first seems to be the
ilOOsl important and the most generally applicable.
Direct experimental evidence on the precise role of oxide nucleating
;:gents is rather meager. In one study of a Ti0 2-nucleated Li20-AbOJSiOl glass-ceramic, the nucleation stage consisted of phase separation on
a scale of about 50 followed by the formation of a crystalline Ti02-rich
'lucleating ph'.se. This phase was estimated to contain about 35 wt% Ti
and about 20 wt% Al; the starting material contained less than 5 wt%
TiO. In other similar systems, however, there is no evidence of structural
helerogeneities, detectable by either electron-microscope or light:scaltering observations, prior to the appearance of the crystals of the
major phases. This could reflect different modes of nucleation being
effective in different systems or merely indicate the difficulties of detecting small-scale heterogeneities. More generaJly, it s~ould be noted that the
important oxide nucleating agents are of great use in a number of systems
containing sizable concentrations of Si0 2 and often significant amounts of
AhOJ as well. In contrast, for many other systems-for example, many
phosphate-based systems-they are not at all effective. The differences
seem most likely associated with differences in immiscibility behavior but
might also reflect differences in lattice match of possible crystalline
phases as well.
The steps used in processing a glass-ceramic body are illustrated
schematically by the temperature-time cycle shown in Fig. 8.27. The
material is melted and formed at elevated temperatures and then often
:::J
ro
ID
Cl.
E
<lJ
1-
Fig. &.27. Schematic temperature-time cycle for the controlled crystallization of a glassceramic body.
371
INTRODUCTION TO CERAMICS
PHASE TRANSFORMATIONS
370
372
INTRODUCTION TO CERAMICS
PHASE TRANSFORMATIONS
373
Fig.8.30. Submicrostructure in Li,O-Al,O,-SiO, glass-ceramic, having identical composiIion wilh that shown in Fig. 8.29, held at 775C for 2 hr befo re heating to 975C for 2 mino From
P. E. Doherty in R. M. Fulrath and J. A. Pask, Eds., Ceramic Mierostructures, John Wiley &
$<Jns, Inc., New York, 1968, pp. 161-185.
(2) MgO-AIz03-SiOz. This system forms glass-ceramic materials having high electrical resistivity and high mechanical strength. The high
slrength has been associated with the presence in the crystalIized
materials of crystalline ,B-cordierite (2MgO2AIz035SiOz). The composilions of sorne useful glass-ceramic materials in this system cover a range
about MgO (13), AIz03 (30), SiO z (47), and TiO z (10).
(3) NazO-BaO-AIz03-SiO z. Commercial glass-ceramic materials in
Ihis system have thermal expansion coefficients in the range of 80 x 10-7
per degree centigrade and cover a range of composition about NazO (13),
BaO (9), AIz03 (29), SiO z (41), and TiO z (7). The important crystalIine
phases are nepheline (Na zOAIz032SiO z) and celsian (BaOAIz032SiO z).
In practice, the commercial products based on this system, most notably
374
INTRODUCTION TO CERAMICS
PHASE TRANSFORMATIONS
8.9
375
A~ discussed i~ Chapter 3, phase separation is a widespread phenomenon.In glass-formmg systems. Of particular interest has been the origin of
the Interconnected structures observed in many systems in which both
phases ~ccu~y large volume fractions. Before Cahn 's calculations based
?n the hneanzed theory of spinodal decomposition, which indicated an
Interconn.ected str~cture (see Fig. 8.4), phase-separation phenomena were
customanly explamed on the basis of nucleation and growth processes
For e~ample, in accounting for the two-phase leachable submicrostruc~
tures In the alkali borosilicates and other glasses, the continuous second
phase was a~sumed to arise from a high concentration of second-phase
drop.lets whlch grew rapidly and linked with one another to form a
contInUOUS network.
This vie":,, has received support from calculations in which a random
array of po~nt nuclei begin simultaneously to grow at a constant rate until
they (lhe ~mor phase) occupy a given volume fraction of the material. At
:0% occupled volume fraction, for example, it was found that each sphere
mtersects on average 5.5 other spheres and only 0.4% of the spheres are
unattac~ed. A ca.lcul~ted cross section through such an assemblage of
spheres IS shown m FIg. 8.31. A high degree of connectivity can be seen in
the.figure, and allowing for the smoothing effect of surface tension in the
reglOns of t~e necks between particles, this morphology closely resembles
lhose seen m many phase-separated gIasses.
Ov.erlappi~g diffusion fields in the regio n of contact between two
grOWIng p.artIcles should, however, reduce the diffusive flux to the regio n
and c~rtall fu~ther growth. When surface-tension effects are neglected,
such mterpartIcle interference effects can completely prevent coalescence (two spheres growing by a diffusion-controlled process should not
co.a!esce but mere.ly flatte.n in the region of their mutual approach). The
crItlcal parameter m such mterference is the ratio of particle separation to
376
INTRODUCTION TO CERAMICS
Fig. 8.32. Stages in the development of interconnected submicrostructures O.12Ba?O.88SiO, thin films beam-heated in the electro n microscope. (a) Early. stage of .separatlOn
showing isolated, discrete particles; (b) intermediate stage ~f separatlOn. s.howm g coalescence' (e) final stage of separation showing high degree of mterconnectlvlty. From T. P.
Sewa:d, D. R. Uhlmann, and D. Turnbull, J. Am. Ceram. Soe., 51, 634 (1968).
377
INTRODUCTION TO CERAMICS
PHASE TRANSFORMATIONS
Suggested Reading
378
379
1. D. Turnbull in Solid State Physics, Vol. 3, Academic Press, New York, 1956.
K. A. Jackson in Progress in Solid State Chemistry, Vol. 3, Pergamon Press,
2.
3.
4.
5.
6.
7.
8.
9.
Problems
8.1.
8.2.
8.3.
Fig. 8.33. (a) Submicrostructure in glass of composition 67 ASiO,. 25.7B,O" and 6.9 wt%
Na,O which has been cooled to ambient and heat-treated for 3 hr at 750C. Note lhe
pronounced interconnectivity. (b) Same composition cooled directly from the melt to 750'C
and heat-treated for 3 hr. Note the smaller degree of interconnectivity. From T. H. Elmer, M.
E. Nordberg, G. B. Carrier, and E. J. Korda, J. Am. Ceram. Soc., 53, l71 (1970).
8.4.
8.5.
Preferential nucleation of crystals at externa] surfaces is observed for the crystallization of most glass-forming liquids. It is also observed that melting occurs heterogeneously at free surfaces at negligible departures from equilibrium. Combine these two
pieces of informaton with your knowledge of thermodynamics to comment on the
source of crystal nucleation (e.g., is it associated with the free surfaces of the liquids
themselves?).
Discuss the effects of the phase transformations exhibited by SiO, which affect the
processing and the resulting properties or use limitations for:
(a) SiO, brick.
(b) A conventional porcelain.
Compare and contrast the two processes of phase transformation, spinodal decomposition, and homogeneous nucleation and growth. Discuss thermodynamic and kinetic
aspects and the infiuence of undercooling and time on the resulting structures. How
could they be distinguished experimentally?
Derive a relationship for the rate of homogeneous nucleation of crystals from a glassy
matrix near the liquidus temperature. How would this differ from heterogeneous
nucleation? What additional factors would have to be included to calculate the
nucleation rate from glasses at room temperature? Would this latter calculation be
appropriate to samples of glass uncovered in an archeological investigation? Explain.
The viscosity of liquid glapium oxide varies with temperature as:
TeC)
(poise)
1400
1200
1000
lO'
lO'
10'
The melting point of this matcrial is about 1300C, and its entropy of fusion is about
2 cal/moleoC. Consider that over the indicated range of undercooling the principal
380
INTRODUCTION TO CERAMICS
souree of eryslal nuelei is eond
d.
..
.
h'
ense ImpufllIes, presenl m eoneenlralions of 10'/cm'
w leh may be assumed effeelive al undereoolings grealer lhan 100C Fo h
1
eould a I cm' sa 1 b h Id f
.
r ow oo
. ~
mp e e e
or proeessing al IOOOC wilhoUl sensible bulk
eryslallJzallOn?
8.6.
Dis~u~s lh~ varialion of viseosily, densily, meIting lemperalure and lendene (or
1evIl:lfiea~lOn of sodium silieale glasses as a funelion of sodium e~nlenl Do lhe ~ame
for ~~~OSIIY and d~nsilY v~~ialions of sodium borales. (Be sure lo expl~in lhe reason
or J erenl behavlOr of slheales and borales.)
8.7.
8.8.
I?
T mp =123IoK,
8.9.
Reactions with
and between
Solids
:ead
T.urnbull, 1. Chem. Phys., 18, 768 (1950), and eommenl on his melhod (or
elermmallOn of lhe eryslal-liquid surfaee energy of mercury.
LJ
= 5.35 gm/cm'
The A.O-BO syslem has a miscibilily gap al lOoooK lhal ranges from 4 lo 98 mio BO
~hal l~ lhe free-energy change for complele precipilalion of a mole of 6% malerial;
hal IS lhe free-energy change per mole of precipilale formed? Whal is lh;
free-energy change p:r :'Tlole of preeipilate during lhe firsl slage of precipilalion? Whal
pres~u.re on lhe precl~llal~ (bUl nol on lhe malrix) is required lo prevenl lhe inilial
preclpllale from growmg If lhe molar volume is 10 ce?
i/
381
382
INTRODUCTION TO CERAMICS
(9.2)
c
In - = K(t - to)
.(9.3)
Fig.9.1. Schematic representation of (a) multpath process in which each path contains
several steps; the process is dominated by the fastest path (path 3). (b) Multistep path in which
each step has an activation energy; the overall rate along this path is determined by the slowest
step.
383
384
385
INTRODUCTION TO CERAMICS
reaction path of lowest energy between the reactant and product, there is
an energy maximum, actually a saddle point, corresponding to the
activated complex or transition state, such as discussed for diffusion in
Chapter 6. This concept of an activated complex has been generally
accepted as the basis for reaction-rate studies and, as discussed in
Chapter 6, leads to a specific reaction-rate constant given by
(9.4)
where k is the Boltzmann constant, h the Planck constant, and 6.H t and
6.S t the enthalpy and entropy of activation, respectively. Individual
reaction steps in an overall reaction process are usually simple and may
be designated as monomolecular or bimolecular. Semiempirical treat
ments of the unit steps on the basis of activated-complex theory allow a
rational theoretical approach toreaction processes.
Complex Processes. Overall processes are frequently complex and
require a series of individual separate unit steps. In such a sequence the
rate of any individual step depends on the specific reaction-rate constant
and the concentration of the reactants for this step. For a series oC
consecutive steps,
(9.5)
We can define a virtual maximum rate for each step as the rate that would
be found if equilibria were established for all previous and following
steps. Under these conditions the reaction with the lowest virtual
maximum rate controls the overall rate if it is much lower than the rates oC
other steps. Under these conditions equilibrium will have been virtually
established for all previous steps but will not necessarily be established
for the following steps. As shown schematically in Fig. 9.1, the reaction
rate for path 1 is determined by step lb of the process; it has the slowest
rate and the largest activation energy barrier and accounts for 85% of the
reaction time; steps la and le occur more rapidly. Reaction step R 1a will
be slowed to arate giving a virtual equilibrium concentration of products;
reaction R 1c will be slowed because R 1b is producing few reactants for
step R Ic
We have already noted that most condensed-phase processes of
interest in ceramics involve heterogeneous systems; changes take place at
a phase boundary. The overall process involves (1) transport of reactants
to the phase boundary, (2) reaction at the phase boundary, (3) transport of
products away from the phase boundary. This series of reaction steps has
relatively simple kinetics, provided the virtual maximum rate of one step
is much slower than that of anyof the other steps. If we assume this to be
Plas!er 01 pars
mold
Cast layer
Slip
Suspended c1ay
partcles
O~
E;;3 a o
o
0Q
o
.4-
00
'-'Q
:llzO
Capllares
[]
=o
G;)
P,
::::::J
()
c::? o
~~
=
o
Plll
-;::::::::::=-
00
CJ
Fig, 9.2. Schematic representation of the formation of a slip-cast layer formed by the
extraction of water by capillary acton of a plaster of pars mold.
386
INTRODUCTION TO CERAMICS
transport of water out of the slip and into the capillaries; the rate-limiting
step is the flow of water through the compact clay layer. As the layer
thickness increases, the overall rate of material transport decreases
because of the increased permeation distance (similar to gas permeation
through glasses, discussed in Chapter 6).
We begin by writing the flux equation for water,
J=-K
dP
dx
= (_1)
Kp
dx = _ K dP = _ K IiP == _ K 2y
dt
dx
x
rx
(9.7)
where p is the density of the cast layer and K is a factor for converting the
volume of water removed to the volume of clay particles deposited.
Integration of Eq. 9.7 gives
X =
2 )
2KpK-!
1/2
l12
0.12 r--'---r-r-'---r~r--'---r~-'--'---,
=E
~-!:!
= (K't)1I2
(9.8)
That is, the wall thickness of aplanar casting should increase with the
square root of time (Fig. 9.3).
This parabolic rate law is commonly observed for kinetic processes in
which the limiting step is mass transport through a reaction layer.
Interdiffusion between Solids. In Section 6.3, we discussed the chemi
cal diffusion coefficient and its formulation in terms of the tracer diffusion
coefficients for the case of interdiffusion. If we measure the rate at which
two ceramics interdiffuse, this too can be considered the formation of a
reaction product which is a solid solution rather than a distinct or separate
phase. Let us consider the interdiffusion between crystals of Ni and
CoO at a high temperature. The solid solution that forms is nearly ideal:
0.10
0.08
CV>
:i :il 0.06
<ve
u-'<:
~: 0.04
0.02
~6)
where we assume aplanar deposit (unidirectional flow) and that the water
flux J H20 is proportional to the pressure gradient resulting from the
capillaries ofihe plaster moldo The permeation coefficient K depends on
the clay particle size, particle packing, and the viscosity of water and is
temperature-sensitive. The water pressure in the slip, P" is 1 atm; in the
mold, P m, it is determined by capillarity, IiP = P s - P m = 2y / r (Chapter
5). The surface tension is a function of the deflocculating agents used.
Until the capillaries become filled with water, IiP is approximately
constant, and the flux can be related to the change of the layer thickness
dx/dt,
387
Time 2 (min)2
Fig.9.3.
mold.
15 = [D/X2 + D 2TX.] (1 + : l~
lJ
r..
6
Z
~
E
-!(
E
Q)
;;S
bJl
<f)
u:i
Q)
r..
.!o!
IQ
lO
bJl
q,
;;---
"
U
ID
~~
:.
u:i
ca
..n
:s
..n
""
10-10 I---L......l.._I-..L-L----l_l..--L---l.--l
O
0.5
1.0
o
..n
cin(Co,Ni1_,JO
(a)
lO
o-
'"I
'"I
S
-<i
10- 8
u
ID
C'>
""
LD
E
!:!
10-il
r<1
o
N
1.0
e in (Co,Ni,_.,) O
lb)
\
o.
Fig. 9.4. (o) Comparison o the calculated interdiffusion coefficients j and experimental
values at 1445 and 1300C in airo (b) Tracer diffusion coefficients o "Co and "Ni in
(Co c Ni,_c)O crystals al 1445 and 1300C in airo Plotted as log D versus c. From W. K. Che n
and N. L. Petersen, J. Phys. Chem. Soc., 34, 1093 (1973).
388
.....
389
Z
~~
u
'E
o
AO
(
~B'O:1
B,O"
AO
f:~~J
391
B,O"
H
6e-
140
(lB" = ~lA+)'
AO
AB,O,
.B,O,
122
Vi
e
2
!:!
'0
Reactions occur at
.~
111
X
~
AO-AB,O. interface
2B J++4AO = AB,O. +3A 2 +
V>
V>
Vi
V>
100
<l)
-'"
U
.~
:.c
12)
and at
<l)
-'"
J:::C
f-
t::
AB,O.-B,OJ interface
3N+ + 4B,OJ = 3AB,O. + 2B J+
71
131
Reaction at
AB,O.-B 20 J interface
A'+ + 0 2 - + B,OJ = AB,O.
(3) BJ+ and 0 2" diffuse.
Reaction at
Time (Hrl
AO-AB,O. interface
AO + 2BJ+ + 30'- = AB,O.
11966).
Fig. 9.6. Schematic representation of several mechanisms which may control the ratet!
AB,O. (e.g., spinel) formation. From Ref. 1.
390
392
INTRODUCTION TO CERAMICS
.x:.
i1U'Cked oxides diffuse more rapidly than oxygen, as for the NiO-MgO and
~;O-CoO interdiffusion already discussed. If this begins to happen in the
ltadC in which there is a net mass flow (not for the case of diffusion
Itocffieient measurements using radioactive tracers), for example, AJ+
~s in alumina, a net electrical field results and thereby couples the
I11JOtion of AI+ 3 ions and 0- 2 ions. Several solid reactions based on Eq.
~'9.ll) are now considered.
Oxidation of a Metal. The most extensive studies of the parabolic rate
fIlw in which the process is control1ed by diffusive transport through the
reaetion product are investigations into the formation of oxide layers on
Imtals. The analysis techniques were developed by Carl Wagner which
begin with Eq. (9.11). They are described here in sorne detail because the
,esults extend to many ceramic problems. Consider the formation of a
iCoherent oxide layer on a metal where the ambient oxygen pressure is
Po,' and the effective oxygen pressure at the oxide-metal interface P02i is
determined by the temperature and the standard free energy of formation
oC the oxidation reaction (see Fig. 9.9):
'
",
disti~guishi~g
2Me + O 2 = 2MeO
= CV, = -
Z;F;;]
!::"G~ormaton
(9.12)
~=~+z~
393
(9.11)
lMe = -ZMelcMeBMe
aIJ;c = \ZMeliMe
(9.13)
1.
= -nB.
e
e
ax = I-1IJ',e
a1]e'
l h -- -pBh , ~-I
+1 ,.Jh'
ax
Ambient
atmosphere
Oxide
395
Metal
o.
JMo ~---l
11--,- - -
Fg.9.10.
x-----,,
For a given oxide layer, either electrons or holes are predominant, so that
only one of the last two equations is necessary. The constraint on the net
ftux is electrical neutrality. If we assume electrons to be the important
electronic defect, this constraint requires that ."
J o+ J., = J Me
2HJ
]';13
,IJzM, uro
10
11
10- 60
IO-J4
The net flux and therefore the rate of oxidation is the sum J ox = IJol + IJMel.
The general result can be expressed in terms of the conductivity u and the
lransference number ti (see also Chapter 17), which represents the
(raction of the total charge flux carried by a particular specie;
261)
IOU
1,
'1,
IOIJ
" ,
IOI~
'f
/,
IO-JlJ
IO-l~
Fig.9.9. Standard free energy of formation of oxides as a function of temperature. From F..
D. Richardson and J. H. E. J effes, J. Iron Steel Inst., 160,261 (1948); modified by L. S. Dari.:(lf,
and R. W. Gurry, Physical Chemistry of Meta/s, McGraw-Hill Book Company, New YO/l:..
1953.
-~( t o + t Me)!~I
-IZoIP2
8x
I
(9.15)
Although the composition varies through the layer, average values can be
for t and u to simplify the result, which yields a form of the
~umed
394
(9.14)
396
INTRODUCTION TO CERAMICS
397
Uwe assume that the defect concentration does not have a large variation
the oxide layer
(9.16)
~'er
Recalling that,
2
tU
cZ e 2F D
= eZc
/-L,. = ; RT
uelkT [1 P B 1 P /]
K = 81ZMe\e2
n 02 - n Oz
(9.17)
w. e ca? ~~e tJJpt the oxidation rate is governed by the atomic mobi[ities
(jt
lA /-LMc J
= IZMC/p2
(9.18J
whi~h for an oxide for predominant V~' defects reduces to the approxi-
matlOn
co
K = 21ZMe!
f"'o'; Do d/-Lo
(925)
()f
(9.24)
(9.[9)
(9.26)
Ir the impurity concentration and oxygen pressure are such that the
defect concentrations are in an intermediate range, an intrinsic layer may
1-1-0
slml arly;
(9.20)
-7
3c o
J/3
E
u
(9.21)
Q)
!Jo
b. If D Mc ~
and we assume sing[y charged metal vacancies V' the
rate constant IS
Me,
VI
:aro
Q)
~ -11
Q)
Cl.
bD
[Po'
kT
= 81ZMcl Jp
2;2
e2
Uel d In P 02
-9
E-lO
-8
-12
0.4
(9.23)
0.6
0.8
1.0
1.2
lIT (OK-~ 10 3 )
.ud
whe~~
is the conduction dUe to e[ectrons and holes which have
mobl[hes /-Le and /-LI" respective[y (see Table 6.1 /-Li = B't).
Fig.9.11. Oxygen permeation through calca-stabilized zirconia as a function of temperaturc. Thc oxygen transport is controlled by the concentraton and mobility of electron holes,
Eq. 9.25. From K. Kitazawa, Ph.D. thesis, MIT, 1972.
398
form on the oxygen-rich side (externa!) and an extrinsic oxide layer on the
metal-rich side (at the oxide-metal interface).
Short-Circuit Diffusion Paths. In each of the examples of metal
oxidation, lattice diffusion D, was assumed to be the rate-determining
transport process. In Section 6.6 the importance of other more rapid
diffusion paths was discussed. The effects of short-circuit paths can be
incorporated into the parabolic rate equations. For example, an apparent
diffusivity Da from Eq. 6.67 can be used in Eq. 9.16 to include the
contributions from lattice D, and boundary diffusion Db ;
Da = D, (l - f) + fDb
dx
dt
(9.27)
K'Da
X
where the diffusion coefficient has been extracted from the rate constant
to give another constant K'. Low-temperature oxidation and oxide layers
with fine grain sizes are expected to form by boundary diffusion.
Chemical Diffusion in Nonstoichiometric Oxides. The chemical diffusion coefficient for the counter diffusion of cations and anions can also be
determined from the Wagner analysis. If we assume that electrical
conduction is mainly electronic (tel = 1) that is, movement of electrical
charge is not the rate-limiting step for mass transport (ions), the chemical
diffusion coefficient D can be determined. In terms of diffusion coeffi
cients rather than transference numbers Eq. 9.15 becomes
- Co
J ox -2
Me
1 dILo
l(I2 Me IDo + I2 ID Me) kT
dx
J ox =
CMe
="2 [VMe"']
d In Po,
Me d In [VMe"']
(9.32)
+ 1)
cMeD Me = cvDv,
the
(9.33)
Thus for singly charged vacancies, J5 = 2D vMe , and for doubly charged
vacancies, fJ = DV"e'
If the oxygen pressure is changed from one value to another, a new
O/Me value is established in a nonstoichiometric oxide, and the
oxidation-reduction rate is determined by a diffusion coefficient of the
type in Eq. 9.33. This value is larger than the diffusivity of the cation or
the anion. Figure 9.12 showsthe chemical diffusion coefficient determined
in Fel-B O by step changes in the oxygen pressure which cause diffusioncontrolled changes in the composition. The value of the chemical diffu-
-5.5
u
Q)
- de
D dx
(9.29)
where e represents the excess (or deficit) of the metal or oxygen in the
nonstoichiometric compound. The chemical diffusion coefficient is !he
bracketed termo Consider, for example, the transition metal monoxides
(Fel-SO, Ni1-SO, Co I - 5 0"') for which e IX [VMe"], where ir is the
effective charge on the vacancy and where D Me pDo. The chemical
diffusion coefficient can be written from Eq. 9.29 in the form
fJ
d In Po, _
d In [VMe"'] - 2(a
-6.0
(9.28)
Co
399
INTRODUCTION TO CERAMICS
IQ
OD
.9
-6.5
O/Fe ratios
-7.0
(9.30)
.72
for which the substitution dILo = 1/2kTd In Po, has been made. From the
defect equilibrium reaction, the mass action law gives
(9Jn
1.125 to 1.050
A 1.125 to 1.075
1.125 to 1.1 00
.76
.80
Temperature, lQ:'/T
.84
1
(oK- )
400
INTRODUCTION TO CERAMICS
sion coefficient correlateswith the tracer value (Eq. 9.30) when the defeen
equilibrium relationships are known.
Ambipolar Diffusion. The formality used to derive Eqs. 9.11 and 9.13
also al10ws us to determine the effective dffusion constants when cation~
a~d a~ions are fl~w~ng in the same direction. Referred to as ambipolar
dIffusIOn, a descnptIOn o the atomistic process must again consider lhe
coupling between the oppositely charged species when the transport o!
electrons and holes is slower than ion transport. If the flux of cation~
becom.es excessive, a local internal electric field builds up to "drag" alon
the. amons. This behavior is important in processes involving reaclion$
whIch cause product formation, in processes which are in response lO 3D
applied electric field, and in processes which resultin a shape change due
to mechanical or surface tension forces such as sintering and creep.
As an example, consider a pure oxide for which t el = O. Equation 9.11
can be written for anion and cation transport as in Eq. 9.13. Since lhe
transport of each ion is in the same direction, electrical neutralily s
maintained when
JT =
~ = J Me
IZMel
(9.34)
IZol
where f T refers to the total molecular flux. Equating the anion and calion
charge flux allows for the solution of the internal electric field, a4J /ax,
+ Zo dfLMe
(9.36)
J4J
[iZoicoBo -IZMeicMeB MeJ
JfLMe
Jx - F[ZMe/ZMeICMeB Me - ZolZoicoBoJ
ax
JT =
-cMeBMeCoBo
Jp,(Mez"OzMJ
ZMe!ZMelcMeBMe - ZolZolcoBo
Jx
fT =
cBMgB o afLMgO
[B Mg + BoJ
(9.38)
(9.39)
ax
BMgBoRT dCMgO
dx
[B Mg + BoJ
(9.40)
Eq. (6.11),
JT
__
-
DMgTDoT dCMgO
[D MgT + DoTJ dx
(9.41)
Thus the total molecular transport may be governed by the slowestmoving specie if there is a large difference in diffusivities (e.~.~ ~Mg;:" Do;
Jrx Do) or by an intermediate value when they are not too dIsImIlar (e.g.,
(9.42)
b
"",here DI refers to lattice diffusion and D refers to boundaryl diffusion.
b
In many, oxides, it has been observed that A bD O ;:.. A 'Do and that
A 'DMel > A bD Me b ; thus Eq. 9.42 reduces to
(9.43)
(9.37)
~here we have assumed local equilibrium, IZMel dCMe = IZol dco. SubstitutIon of Eq. 9.37 into Eqs. 9.34 and 9.13 yields
401
49~~~Y~~!~
tD. W. Readey, J. Am. ceram'SOCtf"
,,,J
"~f\.U"-""\'
'.,
CJ
Q:-
['.'
".,
"
\" .
402
9.3
INTRODUCTION TO CERAMICS
As discussed in Section 9.1, heterogeneous reactions at high temperatures require, first, material transfer to the reaction interface, second.
reaction at the phase boundary, and in sorne cases diffusion of products
away from the reaction site. Any of these steps can have the lowest
virtual reaction rate and be rate-controlling for the overall process.
Generally, once a reaction is initiated, material-transfer phenomena
determine the overall rate in the high-temperature systems of importance
in ceramics. As discussed in the previous section, the diffusion of ions and
electrons through a stable oxide film on the surface of a metal determines
the reaction rateo If, however, the film forms with cracks and fissures, tbe
rate may be determined by gaseous diffusion through these channels. ID
this section we wish to consider several important examples of the way
ceramic materials interact with gases and liquids and to determine tbe
rate-limiting kinetic equations.
Gas-Solid Reactions: Vaporization. The simplest kind of solid-ga~
reactions are those related to vaporization or thermal decomposition ol
the solido Section 9.4 contains a discussion of the decomposition of a sol id
to a gas and another solid; in this section we are primarily concerned with
reactions in which the solid forms only gaseous products. The rate ol
decomposition is dependent on the thermodynamic driving forces, on tht
surface-reaction kinetics, on the condition of the reaction surface, and 0\tI
the ambient atmosphere; for example, at high temperatures oxidt$
volatilize much more rapidly in a vacuum than in airo
The loss of silica from glass and refractories in reducing atmospheresil:
an important factor which limits the usefulness of these ceramic prc)du,ctt.
Consider the following reaction which can cause the volatilization el
SiO z:
equation:*
dn,=
APla,
dt
V27TM,RT
where
~~I
--'
10-z5
K eq -- P~iOPO'
2
-
(9.451)
aSiO,
Assuming unit activity for the silica, it is apparent that the ambiull
oxygen partial pressure controls the pressure of SiO(g) and therefore tk
rate of vaporization. Under reducing conditions (inert atmosphere, Hzenr
CO atmosphere) of Po, = 10- 18 atm, the SiO pressure is 3 x IO~ a!mt
(0.23 torr).
The rate of evaporation near equilibrium is given by the Knudum
(9.46)
Aa,p T
-9
S(MI T)112 ~ 2.3 x 10
(9.47)
- (Po, - Po:"')ao,
o, -
(27TM o ,RT)IJZ
(9.48)
where Po, is calculated from the standard free energy of the decomposition reaction (e.g. Eq. 9.45).
For the vaporization of SiO z by reaction (9.44), Eq. 9.46 predicts a loss
5
tate of about 5 x 10- moles Si0 2 /cm 2 sec at 1320C. Figure 9.13 shows
actual SiOz loss rates from various silica-containing refractories annealed
in hydrogen. The overall decomposition reaction in this case is
(9.49)
(9.44ij
403
Tbe effect of a few mole percent water vapor in the gas stream is evident
from Fig. 9.14. As predicted from Eq. 9.49, the SiO(g) pressure is
dreased by an increase in the HzO(g) pressure.
Chemical Vapor Transport.. Next let us consider the reaction of an
IIICtive transport gas with a ceramic. The net effect is to increase the
npor-phase transport. Sorne high-temperature"ceramics and many thinIi!m electronic devices are prepared by chemi cal vapor deposition. By
i ItOntrolling the chemical potential (concentration) of reaction gases, the
mue of deposition can be controlled. Generally the rate of.deposition and
tbe temperature of deposition determine the reaction kinetics and rates at
'M. Knudsen. Ann. Phys. 47, 697 (1915),
f.
SO
95~~
8i0 2
35
70 -
30
60
25
50
'"
i:
20
b~
15
'"
.2
'"
.2
i: 40
lE
'"
405
52%
b~
la
30
se
20
10
O
O
20
:::J
S%
40
60
100
lW
1~
lW
1~
200
Time (Hrl
O
Fig.9.14.. Weight los s of brick at 1370C in 75% H2-25% N 2 atmosphere. After 32 hr water
vaporwas added for ISO hr. From M. S. Crowley, BlIl/. Am. Ceram. Soc.,46, 679 (1967).
Time (Hr)
la)
SO
95% 8i0 2
70 60
50
'"'"
.2
i: 40
b~
30
52%
20
34%
4%
10
1j//~8%
OL __ .:::::~;;;;~~~~;======~~ll-O~%_J
2000
1200
1300
Temperature
1400
(OC)
(b)
Fig.9.13. (a) Weight loss of brick at 1425C in 100% hydrogen. (b) Weight loss of brick aftcr
50 hr in 100% hydrogen. From M. S. Crowley, BlIl/. Am. Ceram. Soc., 46, 679 (1967).
404
406
INTRODUCTION TO CERAMICS
T": :CO~ld_
407
=-
AD
lRTov (Ph
Pe)
(9.53)
Distance~
(9.54)
~poWder
~Crystal
I'
-1
FeO/s)
+ 2HCHg)
TI.
~ FeCI?/g)
Te
"G O
U
H?O/g)
cm 2 /sec
PSystem
Fig.9.15.
gradient.
matter is fram the hot chamber to the cooler chamber because of the
c?ncentration gradient (the direction of transport is determined by the
sIgn of the enthalpy of the reaction).
The kinetics of mass transport as determined by the diffusion of the
rate-limiting specie-for example, diffusion of FeCb(g)-is given bv
Fick's law:
.
~; = -
AD :; = - AD
~C = _ AD (Ch ~ Ce)
= -
RT l
h
P~eClz
n (B _ 2P Fec 1z)2
(9.55)
TI.<
DIgas)" 4 x 10- 7 ~
(9.50)
408
INTRODUCTION TO CERAMICS
1550C
j = dnldt =
D(CI -
c~)
0.004
<J
e
'Vi
0.002
./
E c.
~,
Vl
Q)
.
.--30
40
50
60
1
70
S
e
1350C
.,
O
~
e
Q)
gCeo ~---~---=::::::'_----..,.-SO
90
o--J
(9.57)
14S0C
141OC
(9.56)
8(1- cN)
!:!
~
409
410
INTRODUCTION TO CERAMICS
JI /4
)
0.06
~ 0.04
e
(9.58)
0.03
,/
,/
,/
0.02
where x is the distance from the leading edge of the plate, v is the
kinematic viscosity 7} / p, g is the gravitational constant, P~ is the density
of the bulk liquid, and P, is the density of the saturated liquid (the liquid al
the interface). Thus the average dissolution rate for a plate of height h is
given by
(9.59)
Predicled / /
0.05
'
411
0.01
-/6
/.
,/ ,/
/-
/
/
Free conveclion
21 % AlzO" l550'C
/.
O~----=-=:-------:~::-:-
5,000
.L..
10,000
Time (sec)
15,000
--I
20,000
a=
D)1/3 (V)1/2
1.611 ( v
w
(9.601
where w is the angular velocity (rad/sec). The mass transfer for a rotating
disc is proportional to the square root of the angular velocity:
j = dn/dt = 0.62D2/3V-1/6W 1/2 (Cl - c~)
A
(l-c,V)
(9.61)
Q)
30
,;
'6
-"'
oS
e
:.::;
:J
"O
~
20
Q)
--..
Ul
E
'6 ~
'O
2
ro
ce
It is clear from the data in Figs. 9.16 and 9.19 that the dissoJution rate is
extremely temperature-sensitive. Since. we have assumed transportlimited kinetics, the temperature dependence is largely determined by the
exponentiaJ temperature dependence of diffusion (Eq. 6.39). The dependence of the corrosion rate of several ceramics on temperature is shown
in Fig. 9.20.
(9.621
10
20
30
~il- 9.19. (a) Dependence of rate of dissolution of face of sapphire disk on square roo! of
ilIIflUlar velocity.
0.06
E
~
413
0.2001----1-1
0.04
;;;
::
1410 C
0.150 I - - - - I + - - - - + - - - - + - / - - - + - - - - j
1340C
Q
V>
2
30.100
4,000
6,000
Time (secJ
8,000
10,000
1500 oC
x Sopphlre
(b)
.. Mulllte
2000
V.freous Si02.
3000
4000
5000
Time (second)
Fig. 9.21. Corrosion rate under forced convection conditions in the 40CaO-20Al,OJ-40SiO,
sAag of indicated specimens of sapphire, polycrystalline alu mina, mullite, and vitreous silica.
From Ref. 6.
40
20
QJ
<f)
10
'E
u
8
6
'"
2
~
~t
2
<5
Siliea
~
\
< f)
Refractory corrosion is often much more complexo Besides complexities in the hydrodynamics of a molten bath, refractories seldom have
ideal surfaces and are usually not of uniform composition. Multiphase
bodies and brick with extensive porosity provide centers for accelerated
corrosion, spalling, and penetration by the liquido In dense single-phase
ceramics, corrosion may be greatest at grain boundaries. This can be seen
from the data in Fig. 9.21, in which the corrosion of polycrystalline AlzO,
is about 40% greater than sapphire after 2500 seco
0.8
0.6
0,4
5.6
5.8
10 4 / T
60
6.2
6.4
(OK)
Fig.. 9.20. Tempera~ure depe.ndence of forced convection corrosion in the 40Ca0-20Al,O,40SI02 slag of alumma, mulhte, and fused silica. From Ref. 6.
412
Of particular interest to ceramists is the large number of transformalions which occur with granular or powdered raw materials; for example,
lhe dehydration of minerals,. decarbonization of carbonates, and
polymorphic transformations. In general, the minerals and reaction
products involved are used in large volumes; thus even though the nature
o these reactions is complex, study of a few examples is important and
414
INTRODUCTlON TO CERAMICS
415
30
26
22
18
14
~
"O
~ o 10
" "
~.c
l'.!:
~:
....
"'Q::;
The standard heat of reaction is 44.3 kcal/mole, that is, strongly endother
mic, which is typical for most decomposible salts of interest. This means
that heat must be supplied to the decomposing salt.
The standard free energy for the decomposition of CaC03, MgC03,and
Mg(OH)z is plotted in Fig. 9.22. The equilibrium partial pressure of the gas
for each of the reactions is also plotted in Fig. 9.22. Note, for example.
that when LlGo becomes zero, P eo, aboye MgC03 and CaC03 and P II;,>
aboye Mg(OHh have become 1 atm. The temperatures at which this
occurs are 1156K (CaC0 3), 672K (MgC03), and 5500 K (Mg(OH)z). The
Pea, normally in the atmosphere and the range of PH,o (humidity) in a.ir
are also shown in Fig. 9.22. From these values we can determine lhe
temperature at which the salt becomes unstllble when fired in air. For
example, CaC03 becomes unstable over 81O o K, MgC03 aboye 48<rKDepending on the relative humidity, Mg(OH)z becomes unstable abovc
445 to 465K. 'Because acetates, sulfates, oxalates, and nitrates havc
essentially zero partial pressure of product gases in the ambient atmos
phere, it is elear that they are unstable at room temperature. That Ihey
exist as salts to a decomposition temperature of about 4500 K indicale,
that their decomposition is governed by atomistic kinetic factors and ncd
by thermodynamics.
The kinetics, as noted aboye, may be Iimited by the reaction at tbe
surface, the flow of heat from the furnace to the reaction surface, or lb:
diffusion (permeation) of the product gas from the reaction surface to tbe
ambint furnace atmosphere. This is shown schematically in Fig. 9.2J.
which also ineludes the appropriate heat and mass flow equations. The
.f
t:,
~"
.e
II!
2
O
<1 -2
<:1
-6
-10
-14
--- --
-18
-22
rtt- 912. Standard free energy of reaction as a function of temperature. The dashed lines are
, libe equilibrium gas pressure aboye the oxide and carbonate (hydroxide).
416
INTRODUCTION TO CERAMICS
......---;'l
CO 2 f10w to furnace
- 4 Dco,(P, - P,)rr,
J 27T
r, - r
JI = 47Tr/
;0,
DI'
100A
(P, - PI)
P. = e -&O'IRT
ql
= h,47Tr/(TI
T,)
47Tk(T, - T,)rr,
q2 = -~~----'-'-":
r, - r
p = density
of CaCO]
0= boundary-layer thickness
M = molecular weight
h, = heat-transfer coefficient
.
f M O re ared by therma! decomposition
(5500C calcine)' (b) crystallite
Fig.9.24. Transmission electron mlcrOgr~Phs o h ~
o[ basic magnesium carbo~ate. (a) ~~~u)~:~~di;ensi:nalmoire pattern f;om overlapped
approaching cube form (900 C ca!cme '~ d' C E Warble and L. S. Williams, J. Am.
crystallites (550C calcine). From A. F. 00 le, . .
,
Cemm. Soc., 49, 676 (1966).
417
418
1800.------.---,----,-----,----,---n
(9.64)
1760
F
:;.1720
ro
:;;
E 1680
Center temperature
1640
Time (min)
9.27. As the P eo, is increased, the driving potential for the reaction
decreases, and thus the reaction rate is decreased.
Sorne of the c1ay minerals, kaolin in particular, do not decompose in the
manner shown in Fig. 9.23; that is, they do not have a heterogeneous
1.0
'"8
419
INTRODUCTION TO CERAMICS
6.0
0.5
I
8
950C
<lJ
Vl
Cl.
0.2
e
:~
Vl
:::J
e
o
0.1
Cl.
'';:;
\ o
0.5
"
.0
\0
ro
U
<lJ
374~C
362C
0
100
120
140
160
180 200
220
240
260 28')
Time (min)
Fig. 9.25. Decomposition of Mg(OHJ, showing first-order kinetics. From R. S. Gordon an;!
W. D. Kingery, J. Am. Ceram. Soc., 50, 8 (1967).
0.1
0.3
0.4
0.9
CO 2 pressure (atm)
Fg.
9.27.
Rate
of
(1- PCo,/P~o,)/(BPco,+
-_. -----------..-----1IilIIIIIIll
420
INTRODUCTION TO CERAMICS
40
1 - 2M
35
c
g 30
x
~,
-O
'"
ro
25
20
.'2 15
"-
lO
5
0
F"g 929
~oit,1.
B.
100
200
300
400
500 600
700
Time (minutes)
800
\j
Kaolinite
'"
~ +~I o
~
'"
0._
E
ro
Dickite
Cf)
V
o
100
1"
200
300
Endellite
400
500
600
700
800 900C
Furnace temperature
Fig.9.28.
Differential thermal analysis curves of kaolin c1ays. The sample temperature leads
(+) or lags (-) the furnace temperature at levels at which heat is evolved or absorbed by
chemical changes.
421
422
INTRODUCTION TO CERAMICS
(9.65)
V = - 7Tr (1 - a)
3
0.03 ,---,---,....--,---,---,------,
""
~0.02
I 001
c'
(9.66)
o0[~~20~~~40~~6~0~==S~0;=~~=J120
Time, (min)
where a, is the fraction of the volume that has already reacted. Combining
Eqs. 9.65 aria 9.66,
y = r(1-~l-a)
(a)
(9.67)
Combining this with Eq. 9.8 gives for the rate of reaction
100,-----,---,-----r---
SO
~
(9.68)
lC
60
<D
-;; 40
Note that this is for spherical geometry where Eq. 9.64 is for cylindrical
geometry. By plotting (1 - ~ 1 - a)2 against time, a reaction-rate constanl
equivalent to KD / r 2 can be obtained which is characteristic of the
reaction conditions. The constant K is determined by the chemicalpotential difference for the species diffusing across the reaction layer and
by details of the geometry.
The relationship given in Eq. 9.68 has been found to hold for many
solid-state reactions, including silicate systems, the formation of ferrites.
reactions to form titanates, and other processes of interest in ceramics.
The dependence on different variables is iIlustrated for the reaction
between silica and barium carbonate in Fig. 9.31. In Fig. 9.3la it is
observed that there is a linear dependence of the function (1 - ~)2 on
time. The dependence on particle size iIlustrated in Fig. 9.31 b shows thal
the rate of the reaction is directly proportional to 1/r 2 in agreement with Eq.
9.68: in 9.31c it is shown that the temperature dependence of lhe
reaction-rate constant fol1ows an Arrhenius equation, K' =
K { exp (- Q/ RT), as expected from its major dependence on diffusion
coefficient.
There are two oversimplifications in Eq. 9.68 which limit its applicabil.
ity and the range over which it adequately predicts reaction rates. Firsl,
Eq. 9.68 is valid only for a smal1 reaction thickness, t::.y; and second, thert
was no consideration of a change in molar volume between the reactanl~
and the product layer. The time dependence of the fraction reacted
20
1.2 , - - - - - - , - - - - - - ,
1.0
"'~
O.S
S
~ 0.6-
.2" 0.4
0.2
oL----,,-L--,.---=-:!
0.85
0.90
1000/T (OK)
0.95
(e)
Fg.9.31. Solid reaction between silica and barium carbonate showing (a) time dependence,
lb) particle-size dependence, and (e) temperature dependence of reaction rateo From W.
1ander, Z. Anorg. Allg. Chem., 163, 1 (1927).
423
424
INTRODUCTION TO CERAMICS
REACTIONS WITH AND BETWEEN SOLIOS
425
=Z
+ (I _ Z)
(KD)
r2 t
Itl!e are the most rapidly moving ions, or ions plus electrons, capable of
:urving at a phase-boundary interface. AH the constraints discussed in
5cction 9.2 must be considered.
Another difficulty in detailed quantitative calculations is the strong
~ndence of reaction rates on the structure of the reaction product. In
IIllaDY cases the reaction product is formed in such a way that it is not
"oberent with the reactants. Because of volume changes it may be formed
i1ith many defects and fissures. Consequently, there is extensive oppor~nity for surface and boundary diffusion, and the diffusion coefficient
iindicated in Eqs. 9.68 and 9.69 is not necessarily identical with diffusion
Ihrough a single-crystal or dense polycrystalline body; these values set a
oower limit for the actual diffusion coefficient and the possible reaction
rateo When new phases are formed, as by carbonate decomposition at low
aemperatures, there is a strong tendency for the initiallattice parameter to
be sorne nonequilibrium value corresponding to a coherent interface and
structure with the reactant, as discussed in connection with nucleation
and growth in Sections 8.3 and 8.4. Diffusion coefficients for this
nonequilibrium lattice are normally larger than for the final equilibrium
product. For example, an increase in solid-state reaction rate is frequentIy
observed at a polymorphic transition temperature (the Hedvall effect).
This effect is related to lattice strains and fissures formed by volume
changes at the transition point; these lattice strains and fissures occur
extensively in quartz, for example, in which the volume change is large.
Also, at the transition temperature equilibrium between two polymorphic
forms tends to occur with a coherent interface giving rise to lattice strains
which increase the diffusion coefficients and the opportunity for material
transfer. At present there are no data available for putting these effects on
a quantitative basis.
Coarsening of Particles. After a solid has precipitated, the particles
may undergo a coarsening effect because the variation in particIe size
represents a variation in the chemical activity from particle to particIe.
Generally termed Ostwald ripening, the principIes apply to precipitates
dispersed in solids or liquids. For the system of dispersed particles of
varying size in a medium in which they have sorne solubility, the smaHer
ones dissolve and the larger ones grow. The driving force is the reduction
o the interfacial free energy. The Thompson-Freundlich equation (Chapter 5) relates the increased solubility of the precipitate Ca to the curvature
a relative to that for a planar interface Cp.l.:
(9.69)
0.0
0.2
0.4
19 microns
25 microns
1.55
,.
20 4
1.51
0.60
1.47
0.80 :;
'"
+
'o
ti
ro
;:l
;:; 1.43
0.90
ro
~
+
:::.
gu
0.95
1.39-
1.35
1.0
1.6
2.4
Time (hr)
3.2
3.6
RT In ~ = 2y M
Cp.i.
a p
"R. E. Carter, J. Chem. Phys., 34, 2010 (1961); 35, 1137 (1961).'
I
I
(9.70)
INTROOUCTION TO CERAMICS
426
427
the density of the precipitate particle. This relation also assumes thal
~;~ < 1,
the increased
solubility is given by
c. = Cp.io (1
2yM )
+ RTap + ...
2 yMc poi.
Cp.io + RTap
(9.71)
(bl
(al
al >a2 > a3
(9.72)
mean radius 01
distribution increases
From Fick's law we can determine the rate of growth of these particles ir
we assume the rate is controlled by diffusion in the matrix, that is, solvenl
(see Fig. 9.33a). The rate of mass gain by al is
(9.73\
--,..
(9.74a)
da2
2 dal
= - p47Tal dt
dt
- - = p47Ta2 -
(9.74b)
the growth of al is
p
dt
RTp
(1-_1-)
al a2
(9.75)
Fg.9.33.
111 aditTusion
around the growing particle (Fig. 9.33b); thus Fick's first law of spherical
symmetry is
J
=47TD~c (~)
r - al
A
10' here
uC
2Myc p.i.
RTpal
~ al,
alr)
(9.76)
r - al
RTp
(9.77)
428
INTRODUCTlON TO CERAMICS
429
= constant = p dV = p47Ta1
dt
da
dt
= 47TDc
,;.2M-y
pRT
(9.78)
5.4
o 85 MgO:
o 85 MgO:
+ 80 MgO:
80 MgO:
15 CaZFeZ05(wt %)
15 CaMgSiO.
15 CaMgSi04: 5 FeZ03
15 CaMgSiO.: 5 CrzO)
af - al =
1550C
6DC p ,;.M-y
p2 R T
(9.79)
5.0
a(t))3 = 1 +.!
or
( a,
_ 6Dc p .i.M-y
P2RTa,3
where
(9.80)
T -
More rigorous analyses give essentially the same result for a distribution
of precipitates. * The variation in the growth rate for varying particle size
and for increases in the mean radius is illustrated in Fig. 9.33c. The
diffusion-Iimited growth of precipitates and of grains during liquid-phase
sintering have been observed to have this cubic time dependence (Figs.
9.34 and 9.35).
.~
4.6
4.2
3.8
200
lo
I~
150
a;
'"
3.4
E 100
.~
""O
'"
'">
<l:
_ 0.2
OD
0.0
0.2
0.4
0.6
lag [t - tol
1.0
2.0
3.0
1
Fig.9.35. Isothermalgrain growth in systems containing MgO and liquid (GS = grain size in
microns, t = time in hours) (GS)'at. From J. White in Materals Sci. Research, Vol. 6, Plenum
Publishing Corporation, New York, 1973, p. 81.
3.5
Fig.9.34.
Consider a size class of partieles of constant ~hape but with a surfaceto-volume ratio Sv = SI V. The surface contribution to the free energy is
The coarsening relationships discussed aboye assumed spherical partieles. The following discussion demonstrates that faceted particles and
even those with different surface energies can be included in the growth
expressions by properly defining dc, the concentration difference.
*C. Wagner, Z. Electrachem., 65, 581-591 (1961); G. W. Greenwood, Acta Met., 4, 243-248
(1956).
(9.81)
The chemical potential difference between the faceted particle (p.) and
the planar interface (p.P.;,) is
1
I,
p. - p.P';. =
in
(G - G P.;,)
= 'Y V (:~) sv
(9.82)
430
INTRODUCTION TO CERAMICS
where V is the molar volume for the particle phase. Let x be sorne linear
(9.83)
for phase separation occurs (Chapter 7); growth rates are limited by atom
mobility (Chapter 6).
For nucleation in solids, strain energy resulting from differences in
volume between precipitate and matrix must be included in evaluating the
free-energy change on forming a nucleus. In these cases, Eq. 8.19 is
replaced by
(9.84)
(9.87)
dS / S
Sy
2a
and
11.-/1
-p.i. -
431
Por spheres a
(9.71):
= (.L
3 and x
-:T,)C
.;,
= Y~i,;' (~~)
(9.85)
!.lC =
where V is the molar volume, M the molecular weight and p the density.
Por faceted interfaces with varying surface free energy the Wulff theorem
is applicable:
.L - .L,ef =
where
9.5
XI
(9.86)
where the strain energy per unit volume is given by D.G, = be , is the
strain, and b is a constant which depends on the shape of the nucleus and
can be calculated from elasticity theory. The presence of D.G, in the
expression for D.G, results in a free energy on forming the critical nucleus,
~G*, which corresponds to a definite crystal10graphic relation of the a
and {3 structures and the .boundary between them when both are
crystalline phases. Inclusion of D.G, can affect greatly the morphology of
slable nuclei and increase the tendency for nucleation at heterogeneous
sites. The strain energy typically causes the formation of paral1el platelets
when a decomposition (precipitation) reaction occurs. The configuration
of precipitates as paral1el platelets al10ws growth to take place with the
minimum increase in strain energy. In general, the formation of thick or
spherical particles produces large values of strain; since the strain energy
is proportional to e 2, precipitates with a platelike habit are preferred when
Ihe volume change on precipitation is appreciable, as is often the case.
Strain energy also effects spinodal decomposition by increasing the
energy of the inhomogeneous solution and depressing the temperature at
which phase separation occurs and by causing separation to occur as
!amellae in preferred crystal10graphic directions.
The energy for nucleation of a new phase depends on the interface
structure and orientation, as discussed in Chapter 5. We can define two
~neral kinds of precipitate. In a coherent precipitate, as in Pig. 9.36,
planes of atoms are continuous across the interface so that only the
1Ccond coordination of individual atoms is changed, similar to a twin
boundary. In contrast, a noncoherent precipitate is one in which the
planes of atoms, or sorne of them, are discontinuous across the interface,
IPving rise to dislocations or a random structure in the boundary layer, as
described in Chapter 5. The interface energy of a coherent boundary is an
crder of magnitude less than that of an incoherent boundary, so that
formation of new phases with definite structural relationships to the
lOOlher matrix is strongly preferred. In addition, the oxygen ions are
(ommonly the more slowly moving in oxide structures, so that a transformalian in which these ions must migrate to new positions is bound to be
432
INTRODUCTION TO CERAMICS
433
r-r-~
1/
>-- >--,
r-'--
-+-.I
r-< r--,
_r
r---
---t-----
l-- >--
1---0'--t--'--
(-,
71
TI
0.80
T
'1
0.60
1- f.-.-l-
-Li !
H-
0.40
J.L
0.20
(a)
0.00 LA::::::.......>d~_-L---!:---8:L:-----:';:;----;-';:;----;-':;---;-'1.
f--
Time (hr)
t}
ee.
ee /.i;Le
~llt(hnicki.
(b)
Fig.9.36. (a) Co?e.rent precipitate with continuous planes of atoms across the interface; (bl
noncoherent preclpltate with discontinuous planes of atoms across the interface.
relatively slow. Therefore, coherency of the oxygen ion lattice is favorable both for the driving force of nuc1eation and for the rate of nuc1eation
and crystal growth.
tG. P. Wirtz and M. E. Fine, J. Am. Ceram. Soc., 51, 402 (1968).
Cristobalite
growth
Kaolinite
dehydration
-y-a-Al 2 0 3
transition
Cristobalite
nucieation
0.60
Y
0.40
12
16
Time (hr)
20
24
28
434
435
---------..iIIIIiiIII.------ -
---~- -~.
-- .
(6)
2 )
Intermedlate preclpllales. Courtesy G. K. Bansal
436
1 Mm 1
,.~
437
438
INTRODUCTlON TO CERAMICS
Fig. 9.42. Equimolar TiO,-SnO, cryslal homogenized al 1600C and annealed 5 min al
IOOOC. Eleclron dilfraclion palternin lower righl; oplical dilfraclion pattern in upper leC!.
Courtesy M. Park and A. Heuer.
ily from differences in the growth rate adjacent to grain boundaries rather
than from a nucleation process. In this system the grain boundaries act as
high diffusivity paths, discussed in Chapter 6, which aIlow nuclei at the
grain boundary to grow initiaIly at a faster rate than nuclei in the bulk,
which tends to denude the area adjacent to the grain boundary of solute;
at later stages in the precipitation process (Fig. 9.45b) there is an area
adjacent to the grain boundaries which tends to be precipitate free. In this
system, as for many of those previously described, the precipitate
particles are coherent with the matrix crystal, and aIl have the same
orientation in each grain of wstite.
For samples in which solubility is smaIl, direct observation of graio
boundaries and dislocations indicates that second-phase precipitation al
these sites is very common indeed. Particularly for many systems
containing silicates as minor impurities, coherency is not to be expected;
. .
. 1 h
f
FeO-MnO solid solution.
Fig. 9.43. Low-lemperature preclplt~te of spmc pase rom
Courtesy C. A. Goodwin, Ph.D. Thesls, MIT, 1973.
439
440
INTRODUCTION TO CERAMICS
Fig.9.44. Precipitation of MgFe2 0. from MgO in basic refractory brick as (a) platelcu
parallel to (100) planes in MgO (500 x); (b) dendritic precipitate (975 x); (e) spheroidal
morphology (232 X). Courtesy F. Trojer and K. Konopicky, Radex Rdseh., 7,8,149 (1948),300
B. Tavasci, Radex Rdseh., 7, 245 (1949).
'~.',',
.~
the smaller driving force and larger energy barrier to nucleation enhances
the importance of heterogeneous nucleation and growth at dislocations
and grain boundaries, as illustrated in Fig. 9.46.
9.6
Nonisothermal Processes
We have considered diffusional processes as they occur under isothermal conditions; however, many ceramic processing procedures include
substantial nonisothermal periods. One important example of the effectof
nonisothermal kinetic processes is the segregation and precipitation of
impurities at grain boundaries while a specimen cools from a high
temperature. *
If we assume that over the temperature range of interest, the diffusion
coefficient is given by
D = Do e- Q1RT
.A:,. ",
"
. (F O) containing (a) 52.67 and (b) 53.10 atom
Fig.9.45. Precipitate of Fe,O. from wustlte ex
% oxygen (95 x). Courtesy L. Himmel.
441
443
[Q/R ]
(9.88)
D = Do exp TI _ aT
/2 = Do
/
(;I~/~) dt
exp
(T
= DoR
aQ
2
I
-Q/RT f
2
2
(9.89)
-Q/RT,)
(9.90)
/
R
T2
2
= aQ [D I I - D 2 T 2 ]
442
d(J/a)
kT
(!1S
dt
= R = 11 exp R
t
)
(!1H
exp - RT
!1H
= A exp - RT
(9.91)
444
d(w/a) _ A
(_AH
dT - a exp
RT
445
INTRODUCTION TO CERAMICS
at, \he
o
(9.9!~
Aw = ~ exp (_ AH
Wo
aAH
RT
::.::
(9.931
0E-< 10-8
The form of the eguation is similar to Eg. 9.89. A plot of the non
isothermal decomposition in vaeuum of a single erystal of CaCO, i~
given in Fig. 9.47. For this reaction and for several other endothermk
deeomposition reaetions the aetivation energy for deeomposition is
identical with the heat of reaetion (Eg. 9.63).
As a final example of nonisothermal kinetie proeesses eonsider the
sintering of glass spheres (diseussed in Chapter 10). The shrinkage rate
o)
d(AL/L
.
.
dt
' w h'le h'IS a f unetlOn
o f t h e surf aee tenslOn
y, t h
e"
vlseoslty
'TI
<l
1.06
.
f 025
glass particles (soda-limeFg.9.48. Kinetic data for nonisothermal sintenng o . 6~~m
\ilica). From I. B. Cutler, J. Am. Ceram. Soc., 52, 14 (19 .
2.4
CaC0 3 (s)
= CaOls)
+ cO 2 (g)
2
(9.94)
AL = ( yRT ) exp (- Q/RT)
Lo
2aaBQ
.
. F1g 9 48 for the sintering of
Kinetic data illustrating Eg. 9.94. are g~ven 10 t . . here of oxygen and
25-micron soda-lime-siliea parhcles 10 an a mosp
water vapor.
.al:f
<1i
tlD
~
-c
1.18
1.10
1.12
1000 I T (OK)
1.6
<.>
-c
tlD
.;
::
tlD
.2
Suggested Reading
1.2
2.
.,
' d B each New York, 1967.
Phenomena, Gordon an
r
,
" Materials Science
Ed "Sintering and Related Phenomena,
973
3 G C Kuezyns k1, .,
. .'
1 6 PI
m Press, New York, 1 .
.'
"
Research, Vo. ,enu
Ed "Kineties of Reaetion lO lome Systems,
4. T. J. Gray and V. D. Freehette,
S.,
Press New York, 1969.
Materials Science Research, Vol. 4, Plenum
,
0.8
Fig.9.47.
.L-_----:!LJ
1.05
1.10
5.
6.
7.
8.
9.
INTRODUCTION TO CERAMICS
446
,
'J.>. In the previous problem, we described a solid solutio.n of AI
Rates of solution can be controlled by (a) diffusion in the liquid, (b) diffusion through
a reaction layer, or (e) phase-boundary reaction. How would you distinguish these?
9.2.
9.3.
9.4.
9.5.
?,
in MgO. Assuming a
manufacturer of basic refractories uses MgO contamInated wlth 5 to 7% AI,O" what
microstructure differences will exist in slow-cooled r~fra~tory compare.d to fastcooled material? Would you predict sintering by. self-dlffuSIO~ (bulk), graIn? growt~,
and cation diffusion in this material would be dlfferent than In pure MgO. Why.
Suppose that the formation of mullite from alumina an? si~ica powde~ is a diffusioncontrolled process. How would you prove it? If the actIvatlOn energy IS 50 ~c~1/mo~e
and the reaction proceeds to 10% of completion at 14oo'C in I hr, how far wllllt go In
9.8.
1 hr at 15OOC? in 4 hr at 15OOC?
An amorphous SiO, film on SiC builds up, limiting further oxidation. The fraction of
complete oxidation was determined by weight gain ~eas~reme~ts and found to obey
a parabolic oxidation law. For a particular-partlcle-sl~ed. SIC and ~ure O, the
following data were obtained. Determine the apparent actIvatlO.n energy In kcal/mole.
How can it be shown that this is a diffusion-controlled reactlon?
Problems
9.1.
447
Temp ("C)
Fraction Reacted
Time (hr)
903
1135
2.55 x !O"
1.47 x 10"
4.26 X 10"
1.965 x 10"
6.22 X 10"
1.50 x 10"
4.74 X 10"
lOO
1275
1327
10
100
10
100
5
50
9.9. The slow step in the precipitation of BaSO. from aqueous solution is t~e interface
addition of the individual Ba++ and SO.-. Diffusion to the surfa.ce IS assu~ed
fficiently fast that we may neglect any concentration differences In the solutlon.
su
. b h B ++
d SO Assume that the rate of addition is first-order In ot
a an
.
(a) Derive an expression for the approach to equilibrium in terms of the rate
constants for the forward and back reaction and the surface area.
(b) What is the effect of an excess of Ba++?
(e) Why can you assume the surface area to be constant? .
..?
(d) How would you modify your approach to include a correctlOn for dlffUSlon,
9.10.
geometry.
I
. h
. I
9.11. In fired chrome ore refractories, an R,O, phase pre~ipitates,as plate ets In ~ e SPIn~
phase matrix. Write the chemical equation for thls reactlon, and explal.n why It
occurs. The precipitate is oriented so that the basal plane in the R,?, phase IS parallel
to the (111) plane in the spinel. Explain why this should occur 10 terms of crystal
structure.
10
449
Grain Growth,
Sintering,
and
V itrification
We have previously discussed phase changes, polymorphic transformations, and other processes independent of, or subsequent to, the fabrication of ceramic bodies. Phenomena that are of great importance are the
processes taking place during heat treatment before use; these are the
subject of this chapter.
During the usual processing of ceramics, crystal1ine or noncrystalline
powders are compacted and then fired at a temperature sufficient to
develop useful properties. During the firing process changes may occur
initial1y because of decomposition or phase transformations in sorne of
the phases present. On further heating of the fine-grained, porous
compact, three major changes commonly occur. There is an increase in
grain size; there is a change in pore s'hape; there is change in pore size and
number, usual1y to give a decreased porosity. In many ceramics there may
be solid-state reactions forming new phases, polymorphic transformations, decompositions of crystal1ine compounds to form new phases or
gases, and a variety of other changes which are frequently of great
importance in particular cases but are not essential to the main stream of
events.
We shal1 be mainly concerned with developing an understanding of the
major processes taking place. There are so many things which can
happen, and so many variables that are occasional1y important, that no
'mere cataloging of phenomena can provide a sound basis for further
study. In general, we shall be concerned first with recrystallization and
grain-growth phenomena, second with the densification of single-phase
systems, and final1y with more complex multiphase processes. There are
many important practical applications for each of these cases.
448
The terms recrystallization and grain growth have had a very broad and
indefinite usage in much of the ceramic literature; they have sometimes
been used to inelude phase changes, sintering, precipitation, exsolution,
and other phenomena which produce changes in the microstructure. We
are mainly concerned with three quite distinct processes. Primary recryslallization is the process by which nucleation and growth of a new
generation of strainfree grains occurs in a matrix which has been
plastical1y deformed. Grain growth is the process by which the average
grain size of strainfree or nearly strainfree material increases continuously during heat treatment without change in the grain-size distribution.
Secondary recrystallization, sometimes cal1ed abnormal or discontinuous
grain growth, is the process by which a few large grains are nucleated and
grow at the expense of a fine-grained, but essentially strain-free, matrix.
Although al1 these processes occur in ceramic materials, grain growth and
secondary recrystal1ization are the ones of major interest.
Primary Recrystallization. This process has as its driving force the
increased energy of a matrix which has been plastical1y deformed. The
energy stored in the deformed matrix is of the order of 0.5 to 1 cal/g.
Although. this is smal1 compared with the heat of fusion, for example
(which is a 1000 or more times this value), it provides a s~fficie~t e~ergy
change to effect grain-boundary movement and changes m gralO sl~e.
If the isothermal change in grain size of strainfree crystals m a
deformed matrix is measured after an initial induction period, there is a
constant rate of grain growth for the new strainfree grains. If the grain
size is d,
(l0.1)
where U is the growth rate (cm/sec), t is the time, and lo is the induction
periodo This is illustrated in Fig. 10.1 for recrystallizatioo'of a sodium
chloride crystal which had been deformed at 400C and then annealed at
4700C. The induction period corresponds to the time required for a
nucleation process, so that the overall rate of recrystallization is determined by the product of a nueleation rate and a growth rateo
The nueleation process is similar to those discussed in Chapter 8. For a
nucleus to be stable, its size must be larger than sorne critical diameter ato
which the lowered free energy of the new grain is equal to the increased
surface free energy. The induction period corresponds to the time
required for unstable embryos present to grow to the size of a sta~le
nucleus. If an unlimited number of sites is available, the rate of nueleatlOn
ncreases to sorne constant rate after an initial induction periodo In
450
INTRODUCTION TO CERAMICS
3 ,------,----,------r----,
52
O.'----::....L-_ _...L-
L -_ _-.J
10
15
20
Time (min)
279 (1935).
practice the number of favorable sites available is limited, and the rate of
nuc1eation passes through a maximum as they are used up. H. G. Mller*
observed that nuc1ei in sodium chloride tended to form first at grain
corners, for example. As the temperature is increased, the rate of
nuc1eation increases exponentially:
N
dt
No exp (_ AGN)
RT
(10.2)
where N is the number of nuc1ei and AGN is the experimental free energy
for nuc1eation. Consequently, the induction period, t o - l/(dN/dt), decreases rapidly as the temperature level is raised.
As indicated in Eq. 10.1, the growth rate remains constant until the
grains begin to impinge on one another. The constant in growth rate results
from the constant driving force (equal to the difference in energy between
the strained matrix and strainfree crystals). The final grain size is
determined by the number of nuc1ei formed, that is, the number of grains
present when they finally impinge on one another. The atomistic process
necessary for grain growth is the jumping of an atom from one side of a
boundary to the other and is similar to a diffusional jump in the boundary.
Consequently the temperature dependence is similar to that of diffusion:
451
0.16
0.14
5 0.12
~
ID
~ 0.10
ro
u
e
'ro
O.OB
(5
u=
U o exp ( -
:~ )
0.06
(10.3)
0.04
0.02
~OLO-6-L00-7~0-0-BO!-:-0----::9~00:--:1~00=0---:-:1l::::00;-:-=~;;;;--;;
*Z.
Temperature (OC)
Fig. 10.2. Effect of annealing lemperalure on grain size of CaF, foliowing compression al
BO,OOOpsi and 10hr al lemperalure. From M. J. Buerger, Am. Mineral., 32, 296 (1947).
. . . . _iIMIiIiIII_.
-----------~--
452
INTRODUCTlON TO CERAMICS
453
(4) the final grain size depends on the degree of deformation', the initia!
rl
r2
(l0.4)
where t:.G is the change in free energy on going across the curved
interface, y is the boundary energy, V is the molar volume, and r, and r
are the principal radii of curvature. (This relationship has been derived
and discussed in Chapter 5. That part of Chapter 5 should be reviewed if
its meaning is not clear.) This difference in the free energy of material on
the two sides of a grain boundary is the driving force that makes the
boundary move toward its center of curvature. The rate at which a
boundary moves is proportional to its curvature and to the rate at which
atoms can jump across the boundary.
Grain growth provides ar opportunity to apply the absolute-reactionrate theory already discussed in Chapter 6. If we consider the structure of
a boundary (Fig. 10.3), the rate of the overall process is fixed by the rate at
which atoms jump across the interface. The change, in energy with an
atom's position is shown in Fig. 10.3b, and the freque~cy of atomic jumps
[o
ID
ID
ID
ID
u:
Position
(b)
(a)
t
(t:.G )
RT
fAB=Nhexp - RT
(l0.5)
(t:.Gt+t:.G)
RT
Nh exp -
RT
(10.6)
so that the net growth process, U = Af, where A is the distance of each
jump is given by
U
Af = A(fAB - fBA) =
t:.G
t:.G
AH t
T t:.S\
U=
(RT)(A) [YVNh
(l0.7)
t
1)] exp-R
t:.st exp (t:.H
- RT )
(1.+-r2
RT rt
(l0.8)
which is equivalent in form to Eq. 10.3 given previously. That i.s, the r~te
of growth increases exponentiallY with temperature. The umt s~ep .10volved is the jump of an atom across the boundary, so.tha~ the actIvat~on
energy should correspond approximately to the actIvatlOn energy or
boundary diffusion.
454
INTRODUCTION TO CERAMICS
455
If all the grain boundaries are equal in energy, they meet to form ang1e~
of 120. If we consider a two-dimensional example for illustrative
purposes, angles of 120 between grains with straight sides can occur only
for six-sided grains. Grains with fewer sides have boundaries that are
concave when observed from the center of the grain. Shapes of grain~
having different numbers of sides are illustrated in Fig. 10.4;a sample
with uniform grain size is shown in Fig. 10.5. Since grain boundaries
migrate toward their center of curvature, grains with less than six sides
tend to grow smaller, and grains with more than six sides tend to grow'
larger. For any one grain, the radius of curvature of a side is directl)'
proportional to the graindiameter, so that the driving force, and therefolt
the rate of grain growth, is inversely proportional to grain size:
t
= d(d) =!
dt
Fig. 10.5. Polycrystalline CaF 2 Ilustrating normal grain growth. Average angle at
grain junctures is 120.
(10.9)
and integrating,
(I O.IO~
IJsually falling between 0.1 and 0.5. This may occur for several reasons,
one being that do is not a large amount smaller than d; another common
aeason is that inclusions or solute segregation or sample size inhibits grain
powth.
A somewhat different approach is to define a grain-boundary mobility
B,. such that the boundary velocity v is proportional to the applied driving
force g resulting from boundary curvature:
(lO.l1a)
3.0
~-,-------.-----,----,---,---,---.-----,
\.0 - ---- .
S
~
0.3
~--
(l)
.'2
'D
'ro
<?i
Fig. lOA. Schematic drawing of polycrystalline specimen. The sign of curvature oC t~lr
boundaries changes as the number of sides increases from less than six to more than si\.~11I11
the radius of curvature is less, the more the number of sides differs from six. Arrows illlfuanr
the directions in which boundaries migrate. From J. E. Burke.
0.03
~--I-~~""""'
.. _-.. _-+-
0.01 L-...~"-'::::::::::.L.._-L--:-.L-~-=---:-::'::-;:--=':-:-~
I
3
10
30
100
300 1000 3000 10,000
Time (min)
1n1l.10.6.
IJlld:e.
Log grain diameter versus log time for grain growth in pure a-brass. From J. E.
456
INTRODUCTION TO CERAMICS
(10.11 b)
457
lo
di
d,=-
Id,
(10.12)
where d, is the limiting grain size, di is the particIe size of the incIusion,
and Id, is the volume fraction of incIusions. Although this relationship is
only approximate, it indicates that the effectiveness of incIusions increases as their particIe size is lowered and the volume fraction increases.
For the process illustrated in Fig. 10.8, the boundary approaches, is
attachedto, and subsequentIy breaks away from a second-phase particIe.
Another possibility is tha~ the grain boundary drags along the particle
.o
'
~2
o
o
_1_-""
2
Fig. 10.7.. Variation of boundary velocity v with driving force F at 750C for a 20 tilt
boundary In NaCI. From R. C. Sun and C. L. Bauer, Acta Met., 18, 639 (1970).
* Acta
t Acta
458
INTRODUCTION TO CERAMICS
459
BpFb
Vb = - -
(10.131
The inclusion particle moves along with the boundary, gradually becom
ing concentrated at boundary intersections and agglomerating into larger
particles as grain growth proceeds. This is illustrated for the special ca~
of pore agglomeration in Figs. 10.9 and 10.10.
Thus, second-phase inclusions can either (1) move along with bouD'
daries, offering little impedance; (2) move along with boundaries, with lhe
inclusion mobility controlling the boundary velocity; or (3) be so im
mobile that the boundary pulls away from the inclusion, depending on lhe
relative values of the boundary driving force (inversely proportionall/Cl
grain size), the boundary mobility (Fig. 10.7), and the inclusion partic~
mobility, which, depending on the assumed mechanism and partic~
shape, may be proportional to r p- 2 , r p-), or r p- 4 * As grain growth proceedi"
the driving force diminishes, and any inclusions dragged along by lhe
boundary increase in size so that their mobility decreases. As a resull,lhe
exact way in which second-phase inclusions inhibit grain growth not on!:f
depends on the properties of the particular system but also can ea~
change during the grain-growth process, Sorting out these effects requIeli
a careful evaluation of the microstructure evolution in combination w1lJll
the kinetics of grain growth and a detailed knowledge of system propev-tieso Inhibition of grain growth by solid second-phase inclusions has bllI
observed for MgO additions to AhO), for CaO additions to Th0 2 , and im
other systems.
A second phase that is always present during ceramic sintering and im
almost all ceramic products prepared by sintering is residual poro~'
*P. G. Shewmon, Trans. A.I.M.E., 230,1134 (1964); M. F. Ashby and R. M. A. CenlalilIlm;,
Acta Met., 16, 1081 (1968).
.
--.......,..~:
.. ".. ;.
: '.::":'
(b)
fg. 10.9. (a) Pare shape distarted from spherical by moving boundary and (b) pore
auJomeration during grain growth.
460
INTRODUCTION TO CERAMICS
Another factor that may restrain grain growth is the presence of a liquid
If a sma.U amount ~f ,a boundary liquid is formed, it tends to slow
ralO growth, smce the dnvmg force is reduced and the diffusion path is
. ncreas~d. There are now two solid-liquid interfaces, and the driving force
IS the dIfference between them, that is, (l/rl + l/rl)A'- (l/r, + l/rl)a, which
ph~se.
461
il.1mal1er than either alone; in addition, if the liquid wets the boundary,
l!bc interface energy must be lower than the pure-grain-boundary energy.
Abo, the process of solution, diffusion through a liquid film, and
guecipitation is usual1y slower than the jump across a boundary. Howft\'cr, this case is more complex in that grain growth may be enhanced by
nbe presence of a reactive liquid phase during the densification process, as
liscussed in Section lOA, In addition, a very smaU amount o liquid may
(tIhance secondary recrystaIlization, as discussed later, whereas larger
ilIIDounts o liquid phase may give rise to the grain-growth process
ikscribed in Chapter 9. In practice, it is ound that addition o a moderate
:wount o silicate liquid phase to aluminum oxide prevents the extensive
rain growth which requently occurs with purer materials.
Secondary Recrystallization. The process o secondary recrystaUizaIlion, sometimes caUed discontinuous or exaggerated grain growth, occurs
.,.-hen sorne small raction of the grains grow to a large size, consuming the
llniform-grain-size matrix. Once a single grain grows to such a size that it
has many more sides than the neighboring grains (such as the grain with
fifly sirles illustrated in Fig. 10.4), the curvature o each side increases,
and it grows more rapidly than the smaller grains with ewer sides. The
ncreased curvature on the edge o a large grain is particularly evident in
Fig, 10.11, which shows a large alumina crystal growing at the expense o
a uniform-particle-size matrix,
Secondary crystallization is particularly likely to occur when continuous grain growth is inhibited by the presence o impurities or pores.
Under these conditions the only boundaries able to move are those with a
curvature much larger than the average; that is, the exaggerated grains
with highly curved boundaries are able to grow, whereas the matrix
material remains uniform in grain size. The rate of growth of the large
grains is initially dependent on the number o sides. However, after
growth has reached the point at which the exaggerated grain diameter is
much larger than the matrix diameter, d. ~ dm, the cux:.yature is determined by the matrix grain size and is proportional to l/dm. That is, there is
an induction period corresponding to the increased growth rate and the
formation of a grain large enough to grow at the expense o the constan.tgrain-size matrix. Therefore, the growth rate is constant as long as the
grain size o the matrix remains unchanged. ConsequentIy, the kinetics of
seconQary recrystallization is similar to that of primary recrystallization,
even though the nature o the nucleation and driving force is different.
Secondary recrystallization is common for oxide, titanate, and errite
ceramics in which grain growth is requently inhibited by minor amounts
of second phases or by porosity during the sintering process. A typical
resultant structure is illustrated or barium titanate in Fig. 10.12, and the
,1
l"
.,.
.
'
.' ,
<ll
()
o::
.,...
<ll
.....
"
.'
.,..;
E
E
'1
T
1
'-
...
<ll
,5
..:
o:i
.~
....;
;>.
'".,
t:
;:l
o
U
,.:
...~'1
'f
'C
'.,a"
4'\.
"O
o::
.@
...Cll
...
5.-
Fig. 10.11. Growth o a large AI,O, crystaI into a matrix o uniormly sized grains (495x).
Compare withFig. 10.4. Courtesy R. L. Coble.
\D
LO
'o::"
<:::
ro
...
'-
o::
..... .S
....ro
'"
~
Q)
"@
E t
::
e.,
...
()
...
;>.
ro
"O
o::
.,
()
'"
>.
.o
Cll
o::
.~
...
Cll
:<
'o
'"o::
...
Cll
'@
.,
...
Cll
ro
..-l
...;
Fig. 10.12. Large grains o barium titanate growing by secondary recrystallization rom;,
fine-grained matrix (250x). Courtesy R.' C. DeVries.
462
463
464
465
INTRODUCTION TO CERAMICS
pro.gre~siv~ g~owth
IllOC
p' surface energy. These structures all seem to occur in systems having
60
l1J
'Vi
c::
30
'm
tia
.!:
.s
ro
~
10
'O
.,g
ro
c::
3
Fig. 10.14. Relative grajn growth during
,secondary recrystallization of BcD
heated 21 hr at 2000C. From P. DUWCl.
F. Odell, and J. L. Taylor, J. Am. Ceram.
Fig.IO.l5. (a) Idiomorphic grains in a polycrystalline spjnel. The large grajn edges appear
',.:
""'gbl, w ho".' lbo ,h.po of 1'" ,m.l1 ,,,',, " ""l"no' by ,url."
,..
Courtesy R. L. Coble.
""'00 (350x l.
466
INTRODUCTION TO CERAMICS
IDaI~nenc material
467
.....
468
__ ...
__._-----'"-.....---
...........
INTRODUCTION TO CERAMICS
469
Changes in :>
pore shape
~-Lo-~
Fig. 10.17.
Change in shape
and shrinkag:
INTRODUCTION TO CERAMICS
Material
transfer
470
471
~~
p
,-.,(
_---~--It----<I
l
1\
'\
\lens between the spheres with the increase in its volume. The vapor
pressure over the small negative radius of c~rvature is decreased beca~se
!<lf the surface energy in accordance wlth the Thomson-Freundhch
C}Celvin) equation discussed in Chapter 5:
lnE..!.= yM
po dRT
(1.+1-)
p x
(10.14)
..here P, is the vapor pressure over the small radius of cur:ature, M is the
It10lecular weight of the vapor, and d is the density. In thls case the neck
ndius is much larger than the radius of curvature at the surface, p, an~ the
pressure difference po - PI is smal!. Conseq~ent1y, to a good approxlma!ion, In p ,/po equals t.p /po, and we can wnte
t. - yMpo
(10.15)
p - dpRT
..here t.p is the difference between the vapor pressure ?~ t?e sm~ll
~tive radius of curvature and the saturated vapor in eqUlhbnum wlth
che nearly flat particIe surfaces. The rate of condensation is proportion~l
lo the difference in equilibrium and atmospheric vapor pressure and IS
rjven by the Langmuir equation to a good approximation as
M
m = ex t.p ( 271'RT
)"2
g/cm /sec
(10.16)
(10.17)
From the geometry of the two spheres in contact, the radius of curvature
2
contact points is approximately equal to x /2r for x /r less than 0.3;
iU the
INTRODUCTION TO CERAMICS
472
:~e a;e~ o~
'TTX
A='TTX.
v=-
r .
2r
(10.18)
sub~titutin~ values for ~ in Eq. 10.16, A and v in Eq. 10.18 into Eq. 10.17
and mtegratmg, we.obtam a relationship for the rate of growth of the bond
area between partIcles:
_x =
(3v'";
l'M3/2 po )
V2R3/2T3/2d2
113
-2/3
.
113
(10.19)
This equation give~ the relationship between the diameter of the contact
area be.tween partIcles and the variables influencing its rate of growth.
Th~ Importan~ fa~tor from the point of view of strength and other
n:atenal .prop:rtIes IS the bond area in relation to the individual partic1e
Slze, whlch glves the fra~tion of the projected particle area which is
bonded togeth~r-the mam factor in fixing strength, conductivity, and
related prop:rtIes. As seen from Eq. 10.19, the rate at which the area
be~ween partIcle~ forms varies as the two-thirds power of time. Plotted on
a Imear. scale, t~l~ decreasing rate curve has led to characterizations of
end poznt CondItlOns. c~rresponding to a certain sintering time. Thj~
conce.pt of an end pomt IS useful, since periods of time for sintering an
not wldely ~hanged; however, the same rate law is observed for the entin
process (FIg. 10.19b ).
.
473
conditions of use.
The negligible shrinkage corresponding to vapor-phase-material transfer is perhaps best iIlustrated in Fig. 10.20, which shows the shape
.changes that occur on heating a row of initially spherical sodium chloride
particles. After long heating the interface contact area has increased; the
x 0.20
r 0.15 .10
0.075
oo::--.------:l.:---L----"
10
20
30
0.05 ;-l---;':--:--l----L-J-J
20 30
Time (min)
Flg. 10.19.
(a) Linear and (b) log log l t
- p o s o f nec k growth bet,:"een spherical particles .
sodium
chloride
at nsoc.
h~:ig.
10.20. Photomicrographs of sintering sodium chloride at 750C: (a) 1 min; (b) 90 mino
..
474
INTRODUCTION TO CERAMICS
Table 10.1.
Mechanism
Number
Transport Path
Source of Matter
Sink of Matter
1
2
3
4
5
6
Surface diffusion
Lattice diffusion
Vapor transport
Boundary diffusion
Lattice diffusion
Lattice diffusion
Surface
Surface
Surface
Grain boundary
Grain boundary
Dislocations
Neck
Neck
Neck
Neck
Neck
Neck
475
8~E='3>--Et-C--+-------+
Grain boundary
fig. 10.21. Alternate paths for matter transport during the initial stages of sintering.
iCourtesy M. A. Ashby. (See Table 10.1.)
lransfer of inatter from the particle volume or from the grain boundary
bctween particles causes shrinkage and pore elimination.
Let us consider mechanism 5, matter transport from the grain boundary
10 the neck by lattice diffusion. Calculation of the kinetics of this process
is exactly analogous to determination of the rate of sintering by a
npor-phase process. The rate at which material is discharged at the
rurface area is equated to the increase in volume of material transferred.
Tbe geometry is slighUy different:
2
7T
; :
V = 7TX
4r
00.20)
476
INTRODUCTION TO CERAMICS
0.10
0.09
0.08
0.07
0.06
'-lC
'Ya Co
(10.23))
= kTp
I:>.L 005
L .
o
0.04
] = 4D v Llc
0.03
0.02
0.01
*)
700
00
(10.2211
477
0.2
0.1
1/5
-3/5
1/5
(10.23\1
0.05
*)2/5 r-
6/5
t 2 /5
.L
L;
0.02
0.01
( 10.2~il
0.005
0.002 L-------:~----~10;;r0;-------:1100100
1
10
Time (min)
(b)
.
.
t a major or
improved properties is impracticable. Therefore, time IS no
.~ritical variable for process contro~.
.
. . g rate is
Control of particle size is very Important, slI~ce th~ smTtehrm. t face
.
h .
f the partlcle slze.
e m er
roughly proportlOnal to t ~ m~erse o
. d of 100 hr at 1600C is
articles
diameter achieved after smtenng for a pe~1O .
d' F' 10 23 as a function of partlcle Slze. For large p
.
dlustrate m Ig. .
.
..
th
f le
se long periods do not cause extenslve smtenng; as e par IC
the
even
. .
. d
size is decreased, the rate of sintenng IS ralse .
INTRODUCTION TO CERAMICS
478
0.5 r - - - . , . - - - - . . , . - - - - , - - - - - , - - - - , . . . ,
0.4
0.3
x
0.2
0.1
0.10
0.15
r -~ <micron-%)
0.20
3
= 3T"
IAI + VIIIAl +320 o
3Ti A1 + -;:02(g)
0.25
Fig. 10.23. Effect of particle size on the contact area growth in Al,O, heated lOO hr al
1600C. From R. L. Coble.
The other variable appearing in Eqs. 10.22 and 10.24 that is subject lO
analysis and sorne control is the diffusion coefficient; it is affected by
composition and by temperature; the relative effectiveness of surfaces.
boundaries, and volume as diffusion paths is affected by the microslruc
ture. A number of relationships similar to Eqs. 10.23 and 10.24 have beeo
derived, and it has been shown that surface diffusion is most importanl
during early stages of sintering (these affect the neck diameter betweeo
particles but not the shrinkage or porosity); grain-boundary diffusion and
volume diffusion subsequently become more important. In onie
ceramics, as discussed in" Chapter 9, both the anion and the cation
diffusion coefficients must be considered. In Ab03, the best studied
material, oxygen diffuses rapidly along the grain boundaries, and the more
slowly moving aluminum ion at the boundary or in the bulk controls the
overaIl sintering rate. As discussed in Chapter 5, the grain-boundary
structure, composition, and electrostatic charge are infiuenced strongly
by temperature and by impurity solutes; as discussed in Chapter 6, the
exact mechanism of grain-boundary diffusion remains controversia!.
Estimates of the grain-boundary-diffusion width from sintering data range
from SO to 600 . These complications require us to be careful not lO
overanalyze data in terms of specific numerical resl,1lts, since the time or
temperature dependence of sintering may be in accordance with severa!
plausible models. In general the ptesence of solutes which enhance either
479
[Ti~,]3[ V~)
K 1 = [TiA1npoJ3!4
rrom which
(10.25)
(10.26)
100-
1L01
1D
log atom % Ti
480
INTRODUCTION TO CERAMICS
(lo.m
(l0.28"
Since the total Ti addition (Ti A1 + Ti~,) is much greater than the impunt\'
levels, [Tihola' = [Ti A] and [V;z'] = K,[Ti]~ota'. The dependence of lattic~
defect concentrations on titania concentration is shown in Fig. 10.25 for
the proposed model. As discussed in Chapter 6, the diffusion coefficient 5
proportional to the vacancy concentration; as a result the effect of this
model is to anticipate an increase in the sintering rate proportional to the
third power of titania concentration as experimentally observed (Fig.
10.24). At higher concentrations the dependence on titania concentratioo
should become less steep, which is suggested by the sintering data.
Thus far our discussion of the variables influencing the sintering
process has been based on the initial stages of the process, in which
models are based on solid particles in contacto As the process continues.
an intermediate microstructure forms in which the pores and solid are
both continuous, followed by a later stage in which isolated pores are
separated from one another. A number of analytical expressions have
<n
.2!
(1)
v,'"
Al
"tJ
(;
e
o
".;:;
(1)
""
.!2
Fig. 10.25. Model for the dependence of defect concentrations on the Ti concentration in
AI,O,. From R. J. Brook, J. Am. Ceram. Soc., 55, 114 (1972)."
481
J = 47TD v
Ae(Rr~ r)
(10.29)
(a)
(b)
Fig. 10.26. The mean diffusion distance for material transport is smaJler when there are
more of the same size of pores in a boundary.
with a larger number of pores, aH the same size, on a boundary the mean
diffusion distance is smaller when there are more pores, and pore
e1imination is accomplished more quickly for the sample ~ith ~he h.igher
porosity. Thus, although the terms which influence the rate of SlOtenngvolume or boundary diffusion coefficient (and therefore temperatur.e and
solute concentration) surface energy and pore size-are weH estabhshed,
the geometrical relationship of grain boundaries to the pores may have a
variety of forms and is critical in determining what actually occurs.
With fine-grained materials such as oxides, it is usual to observe an
ncrease in both grain size and pore size during the early stages of heat
treatment as illustrated for Lucalox alumina in Fig. 10.27. This partiallY
results fr~m the presence o' agglomerates of the fine particles which"
sinter rapidly, leaving interagglomerate pores, and is partly du~ to t?e
rapi<i grain growth during which pores are agglom.erate? by mOvlOg w.lth
the boundaries, as illustrated in Fig. 10.9. In cases In WhlCh agglomeratln
482
F~. 10.27 (Continued) (e) Scanning electron micrographs after 21 min at 1700C (SOOOx),
ilCd (d) after 6 min at 1700C (SOOOx). Note that pores and grains increase in size, that there are
..'Uiations in packing and in pore size, and that poresremain located between dense grains.
483
484
INTRODUCTION TO CERAMICS
485
-- -- -- ::
.................
----------.... -- .....
/~
Unes of
porosity
..............
equal
.....
,...... ............. ""'--
(b)
(a)
IO
000
00
00 O
00
00
O
O
O
0000
00 0
Fjg. 10.27 ~C~!II('llI.ed) (e) The final mierostrueture is nearly porefree, with only a few pore~
loeatcd wllhm grams (500x). Counesy C. Greskovich and K. W. Lay.
(e)
(')
(d)
fg. 10.28.
6e frietion,
lians caused by die-wall friction during pressing, and from_the more rapid
elimination of porosity near surfaces caused by temperature gradients
during heating, as shown in Fig. 10.28. The importance of local variations
in pore concentration resuIts from the f:let that the part of the sample
containing pore~ tends to shrink but is restrained by other porefree parts.
That is, the effective diffusion distance is no longer from the pore to an
adjacent grain boundary but a pore-pore or pore-surface distance many
orders of magnitude larger. An example of residual pore clusters in a
sinlered oxide is shown in Fig. 10.29.
Not only the kineties of pore elimination can lead to "stable" and
residual porosity, but it is also possible in sorne cases to have a
thermodynamically metastable equilibrium pore configuration. In Fig.
486
INTRODUCTION TO CERAMICS
487
1711ue is 130, for U0 2 + 30 ppm C the value is 88, and for impure boron
carbide the value is about 60. For these materials the consequences of
oonspherical pores have to be considered.
As discussed for discontinuous grain growth and ilIustrated in Figs. lOA
IlDd 10.11, the boundary curvature between grains or phases depends both
0Il the value of the dihedral angle and on the number of surrounding
pains. If we take r as the radius of a circumscribed sphere around a
polyhedral pore surrounded by grains, the ratio of the radius of curvature
the pore surfaces p to the spherical radius depends both on the dihedral
IlDgle and on the number of surrounding grains, as shown in Fig. 10.30a.
\l/hen rlp decreases to zero, the interfaces are flat and have no tendency
1.0 r-----r---,---,---...,---,--..,..--,--------r::=--_
Q:
2
~
:J
O
~
:J
.,u 0.5
(;
c.
.s
<Il
:J
oc
~
.,~
.c
c.
<Il
"O
Fig. 10.29. Residual pore clusters resulting from improper powder proccssing in a samfllr
of 90 mole % Y 2 0,-1O mole % Th0 2 Transmitted light, 137x. Courtesy C. Greskovich iUl~
K. N. Woods.
ce
~
:J
.g
u
'O
(he
.S?
O
a::
p. = 1'gb
2
21's
20
(IOJ<4
In most cases the dihedral angle for pure oxides is about 150, and tbe
spherical pore approximation is quite good; but for Ah03 + 0.1 % MgO the
f'"~.I0.30. (a) Change in the ratio (r Ip) with dihedral angle for pores surrounded by different
Rambers of grains as indicated on individual curves.
488
INTRODUCTION TO CERAMICS
.~
:
1aO
160
'"
t
Pores
shrink
Q)
(;
~
489
140
1/
~I Q.
ao
.E
Q)
t>iJ
Pores
grow
'"
'"
U
40
Q)
.c
012--:4t-E6ial1~0-f12}ll~4-,116;:1~a;-;:2ho~22::--:214-2L6-J2a-l30
F"
(b)
B
.
'"
t
160
Q)
(;
~
120
o
1/
~ I Q.
.2
ao
Q)
t>iJ
e
'"
'"
U
40
Pores
grow
Q)
.c
o
Fig. 10.31.
0.5
1.0
1.5
Ratio 01 pore diameter to grain
Conditions for pore stability.
2O
diam~ter
2.5
powd~r viewed
grain size and pore size is not necessary for pore stability, That is, the site
and size of the porosity relative to the grain-boundary network not only
afects the necessary distance for diffusion but a1so the driving force for the
process .
The interaction of grain boundaries and porosity is, of course, a
two-way street. When many pores' are present during the initial stages of
sintering, grain growth is inhibited. However, as discussed in Section 10,1,
once the porosity has decreased to a value such that se-ondary grain
growth can occur, extensive grain growth may result at high sintering
temperatures. When grain growth occurs, many pores become isolated
froro grain boundaries, and the diffusion distance between pores and a
grain boundary becomes large, and the rate of sintering decreases. This is
illustrated in Fig, 10.16b, in which extensive secondary recrystallization
has occurred, with the isolation of pores in the interior of grains and a
reduction in the densification rateo Similarly, the samp1e of aluminum
oxide shown in Fig. 10.33 has been sintered at a high temperature at which
discontinuo us grain growth occurred. Porosity is only removed near the
grain boundaries, which act as the vacancy sink, The importance of
490
INTRODUCTION TO CERAMICS
491
..
~
boundariv~
Vitrification
To vitrify is to make glassl~ke and the vitrification processdensification with the aid of a viscous liquid phase-is the major firir.g
process for the great majority of silicate systems. (In sorne currem'l
glossaries vitrification is defined as being identical to densification C\11
firing, but the more specific usage is preferred.) A viscous liquid silicate i;
formed at the firing temperat'ure and serves as a bond for the body. F<!IT
lfl.. 10.34. Polished section of Y,O, + 10 mole % ThO, sintered to porefree state. 100x.
[wrtesy C. Greskovich and K. N. Woods.
1a1isCactory firing the amount and viscosity of the liquid phase must be
1lKh that densification occurs in a reasonable time without the ware
1l1:1.mping or warping under the force of gravity. The relative and absolute
oC these two processes (shrinkage and deformation) determine to a
lIwge extent the temperature and compositions suitable for satisfactory
lfring.
Process Kinetics. If we consider two particles initial1y in contact (Fig.
LltUl), there is a negative pressure at the smal1 negative radius of
--------------_.
492
INTRODUCTION TO CERAMICS
~=
r
(ll)
2.."p
1/2
t 1/2
0--r
Qr
V--r
p~oblem
(10.33)
'A'here p' is the relative density (the bulk densiy divided by the tru.e
density or the fraction of true density which has bee? reached) and n lS
lhe number of pores per unit volume of real ma~enal. T.he ?umber of
pores depends on the pore size and relative dens1ty and lS glven by
471'
n 3 r = Solid volume -
1/3
(10.34)
p'
)'/3
3 -1
1 - P ')113 ( _
471'
r
(10.35)
(10.36)
= ( -p-'-
2 ro.."
Fig. \0.35.
493
' lo deduce the properties of the porous material fro~ th~ poroslty .and
(l0.32)
That is, the initial rate of shrinkage is directly proportional to the surace
tension, inversely proportional to the viscosity, and inversely propor
tional to the particle size.
The situation after long periods of time can best be represented as small
spherical pores in a large body (Fig. 10.35). At the interior of each pore
G- r
(lO.3h
__.. _.~.__.
Q.
i-
Compact with isolated spherical pores near the cnd o the sintering process.
.~
0.8
0.6
'"
"O
~ 0.4
ro
Q;
ex: 0.2
oo
0.2
0.4
Fi \036 Increase in relative density of compact with reduced time for a viscous
m:;eriai. From J. K. Mackenzie and R. Shuttleworth, Proc. Phys. Soco (London), B62. 833
(1949).
494
INTRODUCTION TO CERAMICS
~ 1.5 ro 7)
"Y
(10.31)
1.0 r---,------,--,-------r---,-----,-----.
0.7
0.6
Fig. 10.37.
6
Time (hr)
10
12
495
purposes is the viscosity and its rapid change with temperature. For a
typical soda-lime-silica glass the viscosity changes by a factor of 1000
over an interval of 100C; the rate of densification changes by an equal
factor over the temperature range. This means that the temperature must
be c10sely controlled. Viscosity is also much changed by composition, as
discussed in Chapter 3. The rate of densification, then, can be increased
by changing the composition to lower the viscosity o the glassy material.
The relative values of viscosity and particle size are also important; the
riscosity must not be so low that appreciable deformation takes place
under the forces of gravity during the time required for densification. This
makes it necessary for the particle size to be in such a range that the
$tresses dUe to surface tension are substantially larger than the stresses
due to gravitational forces. Materials sintered in a fluid state must be
wpported so that deformation does not occur. The best means of
obtaining densification without excessive deformation is to use very
lne-grained materials and uniform distribution of materials. This requirelDeot is one of the reasons why successful compositions in silicate
$ystems are composed of substantial parts of tale and clays that are
I!3turaUy fine-grained and pro vide a sufficient driving force for the
.ilrification process.
Sil/cate Systems. The importance of the vitrification process lies in the
bct that most silicate systems form a viscous glass at the firing temperalure and that a major part of densification results from viscous flow under
the pressure caused by fine pores. Questions that naturally arise are how
much liquid is present and what are its properties. Let us consider Fig.
126, which shows an isothermal cut at 1200C in the K 2 0-Ab03-Si0 2
$}'stem; this is the lower range of firing temperatures used for semivitreoos porcelain bodies composed of about 50% kaolin (45% AbO), 55%
Si02), 25% potash-feldspar, and 25% silica. This and similar compositions
.l1ft io the primary field of mullite, and at 1200C there is an equilibrium
Ibttween muIlite crystals and a liquid having a composition approximately
7,SSi0 2 , 12.5K 2 0, 12.5Ab03, not much different in composition from the
Ctltectic liquid in the feldspar-silica system (Fig. 7.14). In actual practice
ocly a small part of the silica present as flint enters into the liquid phase,
llnd the composition of the liquid depends on the fineness of the grinding
lI:$ well as on the overall chemical composition. However, the amount of
:Imea which dissolves does not have a large effect on the amount and
i(OOlposition of the liquid phase present. The liquid is siliceous and has a
Ilih viscosity; the major effect of compositional changes is to alter the
eltfative amounts of mullite and liquid phases present. Since mullite is
'ff}' fine-grained, the fluid flow properties of the body correspond to
uliose of a liquid having a viscosity greater than the pure liquid phase. For
496
INTRODUCTION TO CERAMICS
sorne systems the overall flow process corresponds to plastic flow v.;tll:11
yield point rather than to true viscous flow. This changes the kinetiC:Sil~
the vitrification process by introducing an additional term in Eqs. I(}JIU
and 10.36 but does not change the relative effects of different variables.
Although phase diagrams are useful, they do not show all the effectu{f
small changes in composition. For example, a kaolinite composifulll
should show equilibrium between mullite and tridymite at 1400C with IIIU
glassy material. However, it is observed experimentally that even aflllf
24 hr about 60 vol% of the original starting material is amorphous amtl
deforms as a liquido The addition of a small amount of lithium oxide JlI
LbC0 3 has been observed to give a larger content of glass than additiOl1lJ
of the same composition as the fluoride. Similar small amounts o othlll
mineralizers can also have a profound effect in the firing properties el!
particular compositions. That fine grinding and intimate mixing reduce Iilt.
vitrification temperature follows from the analysis in Eqs. 10.31 to IOJt
S. C. Sane and R. L. Cook* found that ball milling for 100 hr reduced lt
final porosity of a c1ay-feldspar-flint composition from 17.1 to 0.3% willll
the same firing conditions. This change is caused in part by increasoll
tendencies toward fusion equilibrium and uniform mixing of constituen1~
and in part by the smaller initial partic1e and pore size. In contrast ld1
triaxial (flint-feldspar-clay) porcelains, which frequently do not reaC111
fusion equilibrium, many steatite bodies and similar compositions whia11
are prepared with fine-partic1e, intimately mixed material and form a le\i\
siliceous liquid reach phase equilibrium early in the firing process.
The time-temperature relationship and the great dependence of vitrifi.
cation processes on temperature can perhaps be seen best in the .experimental measurements iIlustrated in Fig. 10.38. As shown there, the tiro:
required for a porcelain body to reach an equivalent maturity changes by
almost an order of magnitude with 50 temperature change. There art
changes in both the amount and viscosity of the glassy phase during firin&,
so that it is difficult to elucidate a specific activation energy for the
process with which to compare the activation energy for viscous tlo\\'.
However, the temperature dependence of the vitrification rate o
composition such as this (a mixture of c1ay, feldspar, and flint) is greater
than the temperature dependence of viscosity alone. This is to be
expected from the increased liquid content at the higher firing te~pera.
tures.
In summary, the factors determining the vitrification rate are the pore
size, viscosity of the overaIl composition (which depends on amount 01
liquid phase present and its vi1cosity), and the surface tension. Equivalenl
*J.
497
0.95
0.90
Q.
i-
.~
0.85
Cl)
"O
~ 0.80
ro
o;
<r
0.75
0.70
10 min
0.65 L----~-:----:-:1:-=------;7;:;.:__--~
1000
1050
1100
1150,
1200
Temperature (C)
0.95
. 0.90
Q.
i-
.
c:
0.85
Cl)
"O
~ 0.80
ro
o;
<r
0.75
1100 C
1050 C
0.70
0.65 L -_ _l . - _ - - l_ _---'_ _-..l._ _-..l._ _:-:-'
. 0.1
10
100
1000
10,000 100,000
Time (hr)
u~
rl~
10.38. Effect of time and temperature on the vitrification of a porcelain body. Data
F. H. Norton and F. B. Hodgdon, J. Am. Ceram. Soc., 14, 177 (1931).
498
10.4
INTRODUCTION TO CERAMICS
(b)
Fig. lOAD. (a) Surface of solid!iquid composite with varying amounts of (iquid phase. (b)
Drop of liquid between two solid spheres exerts pressure to pull them together. (e) Surface
of forsterite ceramic showing liquid capillary depression between crystals.
499
_......
----~~_.
500
INTRODUCTION TO CERAMICS
develop pressures in the range of 175 to 1750 psi for silicate liquids and an
t~e ra~ge ?f 975 to 9750 psi for a metal such as liquid cobaIt (liOt
dlscusslOn m Chapter 5 and Table 5.2).
~he capillary pressure results in densification by difierent procesSotli
whlch occur coincidentally. First, on formation of a liquid phase there iSJi
rearrangement of particles to give a more effective packing. This proceRI
can l~ad to complete densification if the volume of liquid presenl i.
sufficlent to fill in t~e interstices completely. Second, at contact poilrtt
where there are bndges between particles high local stresses lead 1"
pla.stic deformation and creep, which alIow a further rearrangemell1.
Thlrd, there is during the sintering process a solution of smalIer particlc:.
and growth ~f l~rger par~icles by material transfer through the liqu6
phase. !he kme~lcs of thls solution-precipitation process have aIread]'
bee? dlscussed lO Chapter 9. Because there is a constantIy imposClll
cap.l1lar y pressure, a~ditional particle rearrangement can occur durin:
g~alO-growth and gram-shape changes and give further densification. (Al
?Iscussed for vapor transport and surface difiusion in solid-state sinletmg,. mere soJution-precipitation material transfer without the impose/!
ca~l1lar~ p~essure would not give rise to densification). Fourth, in casesin
whlch lIqu~d penetrates between particles the increased pressure at Iht
contact pomts leads to an increased soIubility such that there is material
transfer away from the contact areas so that the particle centers approac~
one another and shrinkage results; the increase in solubility resulting frOlli
~he contact pressure has been discussed in Chapter 5. Finally, unless thcrt
IS ~omplete wetting, recrystaIlization and grain growth sufficient to form ~
salId skeleton occur, and the densification process is slowed and stopped.
Perhaps even more than for the solid-state process, sintering in tht
presence of a liquid phase is a complex process in which a number of
phen~mena occur simultaneously. Each has been shown to occur, bul
expenmental systems in which a single process had been isolated and
analysed during sintering have not been convincingly demonstrated.
Clearly, the pr.ocess requires a fine-particle solid phase to develop Ihe
necessary capl1lary pressures which are proportional to the inverse
capillary diameter. Clearly, the liquid concentration relative to the solid
particle packi~g must be in a range appropriatc for developing the
necessary capl1lary pressure. Clearly, if and when a solid skeleton
develops by particIe coalescence, the. process stops.
A .critical and still controversial question is the degree of wetting
reqUlred for the process to proceed. In sorne important systems such as
tungsten carbide-cobalt and titanium carbide-nickel-molybdenum the
d.i~edral.an~le is ~e~o. In other systems such as ir0.n-copper and magnesia
sllIcate lIqUlds thls IS not the case at equilibrium; ,but the dihedral angle is
__.- .....
501
[b~', andthe solid is wetted by the liquid phase, as required to develop the
nltCessary capillary pressure. For grain growth of periclase particles in a
iillicate liquid, the dihedral angle has a large effect on the grain-growth
CU\;t:~~, as illustrated in Fig. 10,41. Although zero dihedral angle is not
il:l.')ential for liquid-phase sintering to occur, the process becomes more'
~iective as this ideal is approached.
No R 203
Cr203
L> Fe203
O Cr203 & Fe203
26
'i
e
u
: 24
2
ID
E
ro
'O
e
22
ro
00
Q)
VI
20
ro
'U
.:
ID
a.
ID
OD
18
ID
>
<{
16
10
20
30
40
'
.".f'.
(~"/'.-...
I.
/')--
:~'"
.: .;" .<:~,
.'
(\'.
'.
502
INTRODUCTION TO CERAMICS
tion does not occur. Since the mechanical properties of many ceramic
systems are maximized with high density and sma11 grain size, optimum
properties can be obtained by hot-pressing techniques. The effect of
added pressure on the densification of a beryllium oxide body is illustrated in Fig. 10.42. The main disadvantages of hot pressing for oxide
3.0 r--r-------.--~--,-----_,___-_,_______,
2.9
~
'"E
2:8
~ 2.7
~
'Vi
~ 2.6
"
503
::J
. <Il
2.5
2.4
45
Fig. 10.42.
bodies are the unavailability of inexpensive and long-lite dies for higi
temperatures and the difficulty in making the process into an automatit
one to achieve high-speed production. Both factors make the hot-pressi~
process an expensive one. For oxide materials which have to be pres~
at temperature aboye 1200 or BOOC (often at IS00.to 2000C) graphite iI,
the most satisfactory die material available; the maximum stress is limitodl
to a few thousand pounds per square inch, and the life of dies is USUal/JI
limited to seven or eight pieces. The entire die must be heated and coolodl
with the formation of each piece. Techniques for using high temperature;
in a process in which the die is maintained cool with the material heatodl
have shown sorne promise in laboratory tests but have not been doveloped for production.
For" lower-temperature materials, such as glasses or glass-bondodl
compositions which can be pressed in metal dies at temperatures belO1l'
SOO to 900C, the hot-pressing process can be developed as an automatit
and inexpensive forming method. This is similar to the normal pressingeff
504
INTRODUCTION TO CERAMICS
.
In ferrite and titania compositions contr 1 f ' .
firing is particularly important. As illustra~e~f~:lt~~I~:~.~tIon~~uring
syste~s. (Chapter 7), the phases present depend on the ox 1 2 an e-Q:
In addltIon, as discussed in Cha ter 4 th
..
ygen pressure.
COvers a substantial range of st~chio~et:yCO~p~slhon of these phases
pressure. It is common rac' .
an
epends on the oxygen
the oxygen pressure du~ng ~~i~~ns~h;h~a~ufactureo~ ~errites to control
p~esent, and the overalI phase composition ~tt~m~O~hO? of ~ac~ phase
glve the best magnetic properties.
e o y, IS ma1OtalOed lo
Decomposition Reaction
M
f
~ny o the constituents used in ceramic
bodies are in the form ~f
car onates. or hydrated compounds; these
decompose durin firin
H O) M
.
g.. g to form the OXIde plus a' gaseous product (Ca
sU~faes :~~ 1:~~:~:ss:r~:~~oi~C?rpo(rated as ~arbonates, hydrates, an~
H d
Ing nnng see Sechon 94)
Y rates decompose OVer a d t
. .
d'
. Wl e emperaturerange between 100 and
1000C d
, epen 10g on the partIcular composition. Carbonates d
ove~ a temperature range from 400 to 1000C I
d
d. ecompose
' a so . epen 10g on the
partIcular composition. For each t
emperature there IS, of course, an
SOS
506
INTRODUCTION TO CERAMICS
Fig. 10.44. Cracked quartz grain and surroundng matrx in a porcelain bDdy. DifferentiJ]
expansion due mainly 10 the ex -{3 quartz transitiDn leads to crackng Di larger grains bu!
leaves small grains intact (SOOx).
507
on lhe ultimate density that can be reached during firing ..Gases such as
water vapor, hydrogen, and oxygen (to a lesser extent) are able to escape
from closed pores by solution and diffusion. In contrast, gases such as
earbon monoxide, carbon dioxide, and particularly nitrogen have a lower
rolubility and do not normally escape from closed pores. If, for example,
spherical pores are closed at a total porosity of 10% and a partial pressure
oC 0.8 atm nitrogen, the pressure has increased to 8 atm (about 110 psi)
when they have shrunk to a total porosity of 1%, and further shrinkage is
timiled. At the same time that the gas pressure is increasing, however, the
negative radius of curvature of the pore becomes small so that the
negative pressure produced by surface tension is increased proportional
3
lO I/r; the gas pressure builds up proportional to 1/r For sintering in air
Ihis factor usually limits densification; where very high densities are
required, as for optical materials or dental porcelains requiring high
lranslucency, vacuum or hydrogen atmosphereis preferred.
NonuU:iform Mixing. Although not mentioned in most discussions of
sintering, the most important reason why densification and shrinkage stop
shorl of complete elimination of pores is that gross defects caused by
imperfect mixing and compact consolidation prior to firing are usually
present. Examination of typical production ceramics shows that they
eommonly contain upward of 10% porosity in the millimeter size range
(Ihat is, pores much larger than the particle size of the raw materials
introduced in the composition). These pores are caused by local varialions induced during forming, and there is no tendency for elimination of
Ihese pores during firing. Corrective treatment must be taken in lhe
Corming method.
Overfiring. Ware is commonly referred to as overfired if for any of a
\'ariety of reasons a higher firing temperature leads to poorer properties or
a reduced shrinkage. For solid-state sintering, such as ferrites and
litanates, a common cause is secondary recrystallization occurring at the
higher temperature before the elimination of porosity. Consequently,
Ihere is sorne maximum temperature at which the greatest density or
oplimum properties are obtained.For vitreous ceramics the most common cause of overfiring is the trapping of gases in pores or the evolution
oC gases which cause bloating or blistering.
10.7 Firing Shrinkage
As formed, green ware contains between 25 and 50 vol% porosity. The
amount depends on the particle size, particle-size distribution, and
Corming method (Chapter 1). During the firing process this porosity is
removed; the volume firing shrinkage is equal to the pore volume
508
INTRODUCTION TO CERAMICS
509
rIl~"-':"-"""-""""":'-';'VGreen
le, I Fired
li'~~, )
Green~ ~~ired
_~>-::-.;7~
(b)
r-----------,
(a)
\
\
-----~.=
I
I
....
\
\
I
I
(d)
(e)
.
.
that the bottom surface tends to
,olthe ware against the setter. ThlS 7:~nslO 45d) Ware must be designed
ihrink less than the upper s~rface . 19. . ome's out to be rectangular.
ro that the.final shape, inC~~lOg s:,~~n:~~:,~hrinkage, resulting distorti?n,
Difficul~les caused b~ .1 eren. 1 three ways: first, altering the formmg
:lIld warpmg can be ehmmated lO
' . second designing shapes in a
lll1ethod to minimize the causes o~ w.arPl~~hird usi'ng setting methods in
'il-ay that compensates or warpmg, ano
O;e obvious improvement in
fuing that minimiz~ the effe~ts of .;arp~~:-of the structure during initial
{orming methods lS to ~bt~m ~nt orml
adients, segregation, and
rorming. This requires.ehmm.atl.on o; prses~~ur:a~plesthat have long ratios
other sources .o ~oroslty vanatl~n~si~e var~ations. Extruded and pressed
oC length to dIe dameter cause e
Y.
one to large pressure
mixes that have 10w plas~icit~ are partlcUI.arl~a~t~n and extrusion both
,'ariations and green densl~y dlff~r~nce~; S~~~erence~ during fi.ring. Sorne
cause a degree o segregatlOn an .ensl y 1 ss causing structural variaccur during the castlOg proce ,
d'
seU lmg m a y o .
d'ff
es at various parts of the le or
ons During extruslOn pressure 1 erenc
. t'
.
, I tr
f the die can cause vana lOns.
an unsymmetnca. s~ m~ or.
h . ka e and difficulties from warping
Sometimes vanatlOns lO finng s nn g
Th"
t ue for example
b
ating the shapes
lS lS r ,
'
can be overc~me '! compens b I d lav;tory are designed in such a
in Fig. 10.45, lO WhlCh the closet ow an
....o
tJ1
(b)
(a)
~:--=~)
~
~,\
~ ~>
.~.
~
<~
....
"...
'.
_.i'
(O)
<
i,"--"_'::~'_--
.. . ~>
~
. '-. _.'..
r::5
h:z:??
(f)
.~
..
..
*"w'%"$\",,">\>.w5~:%\SZ\,,*,*S"
~
~J~
;~.
(~J
~.
W//fffl'/F////A/A'lA?//A/A'l//d/dW/?fl0'lh
~
!~
/"
./ .
.
)'
2??
Ce)
(g)
(h)
........
tJ1
(i)
(j)
Fig. \0.46. Setting methods for (al cups and bow\s, (b) large bowls, (e) earthenware, (d) hotel china plates, (e) bone china plates, (j)
frit porcelain plates, (g) hard porcelain plates, (h) tile, (i) brick checkerwork, (j) brick bench setting. From F. H. Norton.
._-_._-..._----------512
INTRODUCTlON TO CERAMICS
way that t~e final shape is satisfactory. In the same way, when plates are
fired in the horizontal position there is a tendency for the rims to settle;
this can be compensated for by adjusting the shape of the initial piece.
Correct setting methods are important in eliminating difficulties caused
by firing-shrinkage variations. These have been most extensively developed for porcelain compositions in which complete vitrification is
desired and high shrinkages resulto Sorne of the standard setting methods
are illustrated in Fig. 10.46. Cups and bowls are commonly boxed as
indicated in Fig. 10.46a. This keeps the rim circular, since warpage of one
restricts warpage of the other; in addition, it prevents the thin rims from
being too rapidly heated. For larger pieces, unfired setters are necessary
as a means of controlling shrinkage and maintaining circular rims. A
variety of methods is used for setting different kinds of plate composi
tions, depending on the amount of shrinkage expected. For ware fired to
complete vitrification individual setting and support are essential. For
ware fired to partial densification, plates can be stacked with no ill effects.
In general, large tiles and brick do not cause much difficulty.
513
Special shapes may require special setting methods to eliminate adverse effects of firing shrinkage. Large refractory tile can be set at an
angle of repose on a flat surface (Fig. 10.47a). This allows the tile to
shrink without much stress. In the same way rods or tubes may be set in
an inclined V gro ove or supported by a collar from the upper end (Fig.
IO.47b). Gravitational forces keep the tubes straight up to lengths of
severa! feet. Unique shapes can always be supported on special setters
designed for the particular sample. Sorne experience is necessary to
handle unique shapes efficiently. Small pieces of sculptured vitrified ware
are particularly difficult. The safest setting provides complete support
from unfired struts .(Fig. 10.47d).
Suggested Reading
1. G. C. Kuczyuski, N. A. Hooton, and C. F. Gibson, Eds., Sintering and Related
Phenomena, Gordon and Breach, New York, 1967.
(a)
(b)
Problems
(e)
(d)
Fig. 10.47. Setting methods for special shapes. (a) Large tHes set an angle of repose;
(b) slender rod supported by collar; (e) special shape; (d) sculptured piece. From F. H.
Norton.
"
10.1. Distinguish between primary recrystallization, grain growth, and secondary recrystallization as to (a) source of driving force, (b) magnitude of driving force, and (e)
importance in ceramic systems.
10.2. Explain why the activatio'n energy for grain-boundary migration corresponds
approximately with that for boundary diffusion, even though no concentration
gradient exists in the former case.
1003. Can grain growth during sintering cause compaction of ceramics? Explain. Can
grain growth affect the sintering rate? Explain.
514
10.4.
10.5.
10.6.
10.7.
10.8.
10.9.
10.10.
lNTRODUCTION TO CERAMICS
Which of the foHowing processes can contribute increased strength to sintertd
articles without causing compaction? Explain.
(a) Evaporation condensation.
(b) Volume diffusion.
(e) Viscous flow.
(d) Surface diffusion.
(e) Solution reprecipitation.
Assuming the surface energy of NiCrJO. is 600 erg/cm J and estimating diffusion dau
from CrJO, and NiO data given in Chapter 6, what would be the initial rate 00
densification for a compact of I-micron particles at 1300C? at 1400C ? at 12ooC?
lf pores of 5-micron diameter are sealed off containing nitrogen at a pressure 00
0.8 atm in a glass having a surface tension of 280 dyne/cm and a relative density 00
0.85, what will be the pore size at which the gas pressure just balances the negatiH
pressure Que to lhe surface tension? What will be the relative density at this point?
Explain the mechanism of reactive-Iiquid sintering, such as occurs for Co-WC
compositions. Identify two critical solid-liquid interaction characteristics in ~
system showing this behavior, and describe how you would quantitatively meaSUlt
them.
From data coHected during sintering of powder compacts ofnominally pure sim~c
phase materials at variable heating rates, the observed rates of density chanllC
analyzed on an Arrhenius plot frequently give activation energies higher in valLlC
than that for lattice self-diffusion. There are three sets of assumptions on which thi\
behavior can be rationalized. Give two examples of suitable assumptions, aJl~
explain the behavior on a mechanistic basis.
During the normal grain growth of MgO at 1500C, crystals were observed to grO'l"
from I micron diameter to 10 micron di ameter in 1 hr. Knowing that the grai:l.
boundary diffusion energy is 60 kcal/mole, predict the grain size after 4 hr at 1600'("
What effect would you predict impurities will have on the rate of grain growlh c~
MgO? Why?
Suppose that in order to reduce sintering shrinkage you were to mix enough fi!c
particles (about 30%), 1 micron in diameter, with coarse particles, 50 microns ltl
diameter, so that aH the interstices between the coarse particles were filled with fi!c
particles. What would be the rate of shrinkage of this compact? Make a plOI cl
log (LlL I Lo) versus log t, and place the I-micron powder and 50-micron powdm
shrinkage Iines in their relative positions; then place the shrinkage curves for Ibr
composite material in its proper position with respect to the I-micron and 50-micrlll1l
curves. Justify your answer.
515
....
---------_.~---
MICROSTRUCTURE OF CERAMICS
11
Microstructure
of
Ceramics
ane of the main principies on which this introductiop to ceramics i~
based is that the properties of ceramic products are determined not on!}'
by the composition and structure of the phases present but also by the
arrangement of the phases. The phase distribution or microstructure in
the final ware depends on the initial fabrication techniques, raw materials
used, phase-equilibrium relations, and kinetics of phase changes, grain
growth, and sintering. In this chapter the resulting structures for a number
of different systems are discussed.
11.1
Characteristics of Microstructure
517
m~.e other side to obtain a section of the required uniform thickness. The
m.ethod is advantageous in that the optical properties of each phase
liment can be determined and the phases thus identified. It suffers from
il';Q main disadvantages: first, specimens are difficult to prepare, and,
'\nd, the individual grains in many fine-grained ceramic materials .are
'1maller in size than the section thickness, which leads to confuslOn,
flrticularly for those who are not experts. In general, considerable
It.lperience is necessary to use thin-section techniqu~s to best adva.ntage:
Polished sections are usually prepared by mountmg a cut speclmen m
8akelite or Lucite plastic and then grinding and polishing one face
'1mooth using a series of abrasive papers foIlowed by abrasive powders
00 c10th wheels. Polished surfaces can be observed directly with reflect~d
Iltght in a metallurgical microscope to dis~ingu~sh pore str~c~ure and, m
.wme ceramics, to distinguish differences m rehef or reflectlvlty bet~e.en
dilferent phases. Usually, however, different phases are best dlstm'ruished after chemical etching. When the sample is subjected to a
:hemical reagent, sorne phases are more rapidly attacked th~n ot~ers;
pain boundaries are usuaIly the most rapidly dissolved. Resultmg dlff.ertnces inrelief and surface roughness allow a distinction among the p~ases
present. Polished sections are advantageous in t.hat they are rela~lvelY
tasy to prepar and are simpler to interpret, partIcularly f~r a begmner.
Phases present cannot be identified by their optical propertles but c.an. be
distinguished and sometimes identified by their etching charactenstIcs.
Suitable etchants must be developed for each c1ass o material. As
discussed in Chapter 13, the reflectivity of a transparent material depends
on its index of refraction; for a silicate with a refractive index of 1.5 only
about 4% of normal incident light is reflected. For these materials a xenon
or arc-light source is preferred; as an alternative a thin layer of highly
refiective gold may be evaporated from a tungsten filament onto the
sample s u r f a c e . .
The resolution obtainable in a microscope is limited by the waveIength
of light used, and in practice optical microscopy is Iimit~d to a magnification of about 1000x. By using an electron beam wlth a wavelength
measured in angstroms, the resolution can be improved to sorne tens of
angstroms (or less with special techniques), and magnifi~aton~ of 50,000x
canbe readily achieved. As with light microscopy, thm sectIons can be
viewed with transmitted electrons. In this mode a sample thickness of less
than 'about 10,000 (l micron) is required, preferably less th~n .1000
(0.1 micron). Samples this thin cannot usuaIly be prepared by gnndmg ?ut
require in' addition either chemical thinning or thinn.ing by argon Ion
bombardment. For survey studies it is often posslble to shatter a
specimen and then use the thin edges of the resulting particles for
518
MICROSTRUCTURE OF CERAMICS
INTRODUCTION TO CERAMICS
519
iR,
'li'nl~re kp and k s are the conductivity of the pore and solid phases and f is
!he voluine fraction for each phase. If k p is much less than k" then k,
Gearly equals k pfp. In contrast, for f10w parallel to the slabs each
520
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
521
solid phase, and samples with high porosity tend to approach a continuous
pore phase to give an S-shaped property-variation curve (Fig. 11.1).
However, this does not always happen. Although a high-fired porcelain
such as that shown in Fig. 11.3 closely approaches having isolated
Fig. 11.3.
Ftg. 1104. Pores which have formed "negative" crystals in UO,; (100) planes are parallel to
Imface (l8,OOOx). Courtesy T. R. Padden.
522
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
:-,
10:- 18 L-_-,L---:-L-........JL--_..L--..l::L.fL_........I
30
20
15
10
Porosity (%)
523
Fig. 11.5. Permeability coefficient for viscous gas f10w in beryllia ware of ditrerilll'.
porosity. Permeability drops rapidly when Ihe porosily is below 5 lo 8%. Afler J. S. O'Ncil1.
A. W. Rey, and D. T. Livey, U.K. AERE-R3007.
Quantitative Analysis
Space FiIling. Much of our understanding and interpretation of mi'ltJ(lstr'uctUlres are based on the interface energy relationships discussed in
n,,,,t.>r 5 and the rate processes discussed in Chapters 8, 9, and 10.
However, even the effects of these are limited by geometrical restrictions
~ the way in which an area or volume can be filled. If we consider aplane
for example, the only regular polygons that can fill an area are
triangles, rectangles, or hexagons. Varous irregular polygons can also fill
'P'\ce. In this case there is a definite relationship between the number of
polygons P, edges between polygons E, and corners C which is given by
law:
C-E+P=1
(11.3)
~ection and
C
2
n=2-+2--
(1104)
The most common corners are those where three edges meet (C / P =
1//3n); much less common are corners where four edges meet (C/P =
524
INTRODUCTION TO CERAMICS
l/4n). If we restrct the structure to one with the simplest corners ",il
three grains meeting, the average polygon must be a hexagon.
As discussed in Chapter 5, a balance of the grain-boundary energie,
where three grain corners come together requires that the boundariel
meet at an angle of 120. If this requirement is met, the only equilibrium
shape is a hexagon. Polygons with fewer or more than six sides, ha\'(.
curved faces and a pressure difference across these curved faces, and lbe
boundares tend to migrate. Grains with fewer than six sides shrink, and
grains with more than six sides grow (Chapter 10).
In three dimensions there are similar geometric restrctions to
space with regular polyhedra. For any system the number of comen,
edges, faces, and polyhedra must obey a relation:
C-E+F-P=l
In addition, if interface energy relationships are to be fulfi11ed, there
must be an angle of 120 between faces where three grains meet along a
common boundary and angles of 1094 where four faces meet at a poinl.
These relationships are nearly met, and space is fi11ed by the packing o.f
truncated octahedra (tetrakaidecahedra) (Fig. 11.6). This shape has Sil
square faces and eight hexahedron faces with twenty-four vertices, each
having two angles of 120 and one of 90. These can be distorted to givc a
lower total interface energy by having a11 corners meeting at 109 and all
edges at 120. This sort of ideal grain is not observed exactIy; studies of
soap foams, plant celIs, and polycrystalIine metals, using stereoscopic
microradiography, have shown that the number of faces in a threc
dimensional grain ranges from nine to eighteen. The number of edges on
MICROSTRUCTURE OF CERAMICS
525
I!'JiCh face is most commonly five and is seldom less than four or more than
1it (Fig. 11.7).
.
As illustrated in Fig. 5.27, when a sma11 amount of second phase IS
:11Med, it can either be dispersed as isolated spherical particles or
ll&omorphic inclusions (Figs. 11.3 and 11.4), completely penetrate beI!'li'ten and separate grains of the major phase (Fig. 7.11), or form betw~en
prain junctions with sorne equilibrium dihedral angl: ~obs~rve the tnanllts of boundary phase with <p approximately 60 In .FIg. 7.18). In .a
I'JraIlsparent section these angles can be measured v.: 1th ster~oscoplc
Il.......-::hniques or proper sample orientation. With plane sec~lOns, wh~ch often
alre al! that are available, the plane of the polished sectlOn may he at any
:l1Iglc to the line of the boundary. ConsequentIy, a numbe~ of app~rent
wgles is observed for any true angle present. From geometncal conslder-
50
40 -
>.
u
; 30 -
::l
CT
Q)
.::
20
lO
OOL~--J2e.:.J3~~4-~5:--~6-~7-~:::::::;;~9-~1'0
Fig. 11.7. Experimentally observed frequency distribution of the number of edges per face
in various systems (reference 7).
526
INTRODUCTION TO CERAMICS
Table 11.1. Basic Symbols Used in Microstructure Analysis and Their Definitions
Symbol
P
mm -1
-2
mm
-)
mm
8
mm
mm/mm
Vl
""~
Q.I
Vl
.o
O
'O
03 4
.o
~
74
Sv
76
78
80
82
84
86
88
Ni-AbO,.
Vv
*Trans.
90
Angle observed
Fig. 11.8.
Definition
Dimensions"
mm
Nv
L
A
S
V
~2
527
528
529
MICROSTRUCTURE OF CERAMICS
INTRODUCTION TO CERAMICS
problem.
- .
As a particle parameter, the mean intercept le~gth L ':" LL L IS a
'limpie and convenient measurement to characten~e partlcle Slze..For
ipherical particles or rods of uniform size, the mean mtercept length glVes
JI measure of the particle radius r:
Sizes and Spacing of Structure Constituents. In observing microstructures, it s frequently found that there are two or more levels of structure.
There is first a structure assocated wth the distribution of relatively large
pores, grog (prefired clay) particles, or other grains in amatrixphase.
Second, there is a structure of phase distribution within the large grains
and within the bond phase. AIso we are often concerned with the
distribution of dislocations and the separation between various structure
- 4
L=-r
sphere
(11.10)
L=2r
rod
(11.11)
(11.12)
=:
N L , the
(11.13)
4(Vv )
=L
(11.14)
Sv = 2P L = 2NL =
_L
(11.8)
(11.9)
/!"
(11.15)
11.=
(11.16)
and
= S-A
(11.17)
(11.18)
530
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
531
Thus, from relatively simple methods of point counting and linC'Jll .' 1I3s been illustrated in Chapter 4. True density can also be determined by
analysis, not only the volume fraction of phases present but a good deala\'liomparing porefree samples with a liquid having a known density. For
information about their size and spacial distribution can be determin~. .g!asses and single crystals this can be done by weighing the material in air
From a histogram of the mean intercept lengths, a calculation of thriUld then suspended in a liquid, determining the volume by Archimedes'
particle-size distribution can be made (reference 1). Special precautiO!lH i1nethod; it can be done more precisely by adjusting the composition or
are necessary in evaluating nonrandom-oriented and anisometric samplet; ~ rtmperature of a liquid column just to balance the density of the solid so
(references 1 and 2 ) . '
}tIlat it neither sinks nor rises but remains suspended in the liquido For
Porosity. A quantitative measurement of the porosity present is onea\'l romplex mixtures and porous solids the sample must be pulverized until
the characteristics of ceramics formed by compacting a powder and firilt8.Xf !bere are no residual closed pores, and the density is then determined by
The pores can OCcur in widely different sizes, shapes, and distributi01\, ~tIle pycnometer method. The sample is put in a known-volume pycnomeand quantitative characterization is not always simple. In many cases tht0 ; ltr bottle and weighed; then liquid is added to give a known volume of
best met~od is t6 use polished sections with lineal or area analysis. This,i; ,quid plus solid and another weight is taken. To ensure penetration of the
an effectlve method for glazes, enamels, porcelains, 'refractories, aDtl holid among all particles, the sample and liquid should be boiled or heated
abrasives and probably should be more widely used than it has been in tht ; \lllder vacuum. The differences in weights obtained give the liquid
pasto The main difficulties with this technique have arisen from (1))1' olume; this is subtracted from the total pycnometer volume to give the
relatively soft specimens that are difficult to polish and (2) samples in; 'rolid sample volume from whichthe density can be calculated.
which grains tend to pull out during polishing so that misleading hi!ft
The bulk density of porous bodies requires determination of the total
:values re~ult. ~olishing soft specimens can be done satisfactorily b1Hil ; ~'olume of solid plus pores. For samples such as bricks this can be done by
lmpregnatmg the sample with a resino Pullout of individual particles bil ineasuring the sample dimensions and calculating the volume. For smaller
mainly caused by differences in constituent hardness or by microfissureti'; K 131llples bulk density can be determined by measuring the weight of
or microstresses already present in the sample. Hardness differenC($ .. lIJtrcury (or of any other nonwetting liquid that does not penetrate the
ca~se high relief that encourages pullouts; this can be corrected by using;i,i ~res) displaced by the sample with a mercury volumeter, or the force
sUltably hard abrasive for polishing (diamond powder, for example) and:li'; j aequired to submerge the sample (Archimedes' method). For small
hard, flat polishing surface. Microstresses or microfissures are flat cracb'; , wnples bulk density can also be determined by coating the sample with
along grain boundaries that allow grains to pop out with very small addotl . ( :lll impermeable film such as paraffin. The weight of the film is measured
stress~s. Pullouts that occur in spite of careful polishing technique 311[
by difference so that the film volume is known. Then the volume of the
one of the best indications that microstresses and microfissures art i wnple plus film can be determjned by Archimedes' method and. the
presento
, j umple volume measured by difference. The total porosity can be
Density. The size, shape, distribution, and amount of the total porosilrf1 ~ lktermined at the same time the open-pore volume is measured by first
. can be determined from the microstructure. The total porosity can also bt . 'l'eghing a sample in air W. and then heating in boiling water for 2 hr to
me~sured by determining the bulk density Pb of a sample
lW the open pores completely with water. After cooling, the weight of the
welght/total volume, including pores) and comparing this with the
piece is determined (1) suspended in water W,u, and (2) in air
density P, (total weight/volume of solids). Then
The difference between these last two values gives the sample
~()lume and allows calculation of the bulk density. The difference
\
p = P, - Pb = 1 - Pb
(!1.1S1)
~ctween saturated and dry weights gives the open-pore volume.
PI
P,
Open Porosity. Various methods have been -devised for characterizing
SometiIpes it is convenient to measure bulk density as the fraction cl'
che open pores by regarding them as capillaries and determining their
theoretical density achieved, Pb I P, = 1 - p,
diameter from the rate of fluid flow through them or the extent
Thetrue density can be determined readily for a single-phase materill1
CID which liquid mercury can be forced into them.In the mercury method,
but not so easily for a polyphase material. For a crystalline solid tbe
!or example, the sample is placed in a container and evacuated, and then
density can be calculated from the crystal structure and lattice consiaG'\.i nxrcury is admitted and pressure applied. The pressure necessary to
since the atomic weight for each constituent is known~ This calculaticm
!wce mercury into a capillary depends on the contact angle and surface
.....
532
._-~-.
MICROSTRUCTURE OF CERAMICS
533
INTRODUCTION TO CERAMICS
= 4'1 cos (J = 14
d
--------~-~~_._-----_._----~
sitions the elays serve a dual purpose of (1) providing fine partiele
and good plasticity for forming, as discussed in Chapter 1, and ,(2)
Illrming fine pores and a more or less viscous liquid essential to the ~nng
mocess, as discussed in Chapter 10. The felds?ar .act~ a~ a fl~x, formlO~ a
lli\lCOUS liquid at the firing temperature, and alds 10 vlt~lficatI~n. The fl~nt
~ mainly an inexpensive filler material which dunng finng rem~lOs
umactive at low temperature and at high temperature forms a hlgh,. osity liquid.
CRISTOBAlITE
Hard porcelain,
semivitreous whiteware
Vtreous tile,
vtreous santary ware
Parian porcelain
Electrieal nsulators
Dental poreelain
Type Body
Cone 16 hard porcelain
Cone 14 electrical insulation ware
Cone 12 vitreous sallitary ware
Cone 12 electrical insulation
Cone 10 vitreous tile
Cone 9 semivitreous whiteware
Cone 10 bone china
. Cone 10 hotel china
Cone 10 dental porcelain
Cone 9 electrical insulation
40
27
30
23
26
23
25
31
5
28
10
14
20
25
30
30
10
10
25
26
34
34
32
25
15
22
95
35
Other
25
33
18
18
12
21
22
35
38 bone!l.'h
2CaCO
25
2 tale
Leucite
K20'A!20a'4Si02
Mullite
_.
3A1 2 0 a'2Si0 2
534
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
535
tion proceeds at a lower temperature, there is more liquid prese~t,W1 be determined from the temperature dependence of diffusion and
greater vitrification and higher translucency are obtained. As feldspar Bi!~iscosity, as discussed in Chapter 9). Also fine grinding to reduce
replaced by clay, higher temperatures are required for vitrification aeJdldilIusion paths gives equivalent resuIts in shorter firing times or at lower
the firing process becomes more difficult and expensive. Howeve; tk; l!llrolperatures.
forming processes become easier, and the mechanical and elect~' The initial mix is composed of relatively large quartz and feldspar
properties of the resulting body are improved. The amount and kinds dI pajns in a fine-grained clay matrix. During firing the feldspar grains melt
clay used are determined for the most part by requirements with regard tti! :IC about 1140C, but because of their high viscosity there is no change in
forming; as more difficult forming techniques are used, a larger c~,~pe until aboYe 1200C, Around 1250C feldspar grains smaller than
content is required.
aoout 10 microns have disappeared by reaction with the surrounding clay,
Considering the different compositions iIlustrated in Table 11.2 and r~ aod the larger grains have interacted with the clay (alkali diffuses out of
11.9, dental porcelains require higher translucency and are formed in lflt feldspar, and mullite crystals form in a glass). The clay phase initially
small s!m~le shapes so that high-feldspar-low-clay compositions 3ft ,brinks and frequently fissures appear. As illustrated in Fig. 7.29, fine
clearly mdlcated. In contrast, hard porcelain artware and tableware mlllll lI1ullite needles appear at about 1000C but cannot be resolved with an
be for~ed in~o complicated thin-wall shapes by hand throwing, jigge .
lIptical microscope until temperatures of at least 1250 are reached. With
and slIp cas~mg. For successf~1 forming it must have a substantial clar. !'urther increases of temperature mullite crystals continue to grow. After.
con.tent. ~hma clay has relahvely large particles (medium plasticit}'. lfring at temperatures aboye 1400C, mullite is present as prismatic
drymg shnnkage, and dry strength) and is white-burning; ball clay has ficle!. uystals up to about 0.01 mm in length. No change is observed in the
particles (high plasticity, drying shrinkage, dry strength) and contaim
I\Illllrtz phase until temperatures of about 1250C are reached; then
larger ~mounts. of impurities .which make it less translucent and usuaIDy; rounding of the edges can be noticed in smal1 particles. The solution rim
not whIte-burnmg. A balance IS struck by using as much china clay as "i/lI' Ilfhigh-silica glass around each quartz grain increases in amount at higher
permit successful forming. For automatic forming machines, such ~
lI:mperatures. By 1350C grains smaller than 20 microns are completely
those used for American hotel" china and semivitreous ware~ largan tissolved; aboye 1400C little quartz remains, and the porcelain consists
amounts of ball clay are used. Compositions such as low-tension e1ectri:Wnost entirely of mullite and glass.
cal porcelain are not critical as regards either forming or firing operatiom.
The heterogeneous nature of the product is illustrated in Fig. 11.10, in
A balance is desired which leads to the most economical ware. Since tht
which quartz grains surrounded by a solution rim of high-silica glass, the
largest individual manufacturing cost is labor, a body is used which isi IOUtlines of glass-mullite areas corresponding to the original feldspar
easy to !orm but at the same time can be fired without difficulty. Firingifi
pains, and the unresolved matrix corresponding to the original clay can
not carned to complete vitrification, thus avoiding problems of high ti
~ clearly distinguished. Pores are also seen to be presento Although
. temperature, high firing shrinkage, and warping.
lDullite is the crystalline phase in both the original feldspar grains and in.
Changes during Firing. The changes that occur in the structure oC ill
tfIe clay matrix, the crystal size and development are quite different (Fig.
triaxial ??rcelain duri~~ firing depend to a great extent on the particular
n1.ll). Large mullite needles grow into the feldspar relicts from the
composItlOn and condItlOns of firing. As shown in Figs. 11.9 and 7.24, lile
rorface as the composition changes by alkali diffusion. A quartz grain and
ternary eutectic temperature in the system feldspar-clay-f1int is at 99O'C,,!
che surrounding solution rim of silica-rich glass is shown in Fig. 11.12.
~h~reas the temperature at which feldspar grains themselves form illJ Mullite needles extend into the \mter edge of the solution rim, and a
l~qu~d phase is 114~oC. At higher temperatures an increasing amount ~J ttypical microstress crack is seen; the crack is caused by the greater
hqUld IS formed whlch at equilibrium would be associated with mullite~!
rontraction of the quartz grain compared with that of the surrounding
a ~olid phase. I~ act~al practice equilibrium is not reached during nonmlL!
lDatrix. Usually.the quartz forms only glass, but for sorne compositions
finng because dlffuslOn rates are low and the free-energy differences Zftl
Ifred at high temperatures there is a transformation into cristobalite which
small between the various phases present The general equilibriWll'
1tartS at the outer surface of the quartz grain (Fig. 11.13). The overall
conditions do not change at temperatures aboye about 1200C (see F'r&.'
'lnicture of quartz grains, microfissures, solution rims, feldspar'relicts of
7:2~)so that long ~ring times at this temperature give results that are vaf' !:ass and mullite, and fine mullite-glass matrices is shown with great
similar to shorter times at higher temperatures (the relative times requ~
darity in Fig. 11.14.
536
Fg. 11.11. Mullite needles growing into a feldspar re l'le t (e tched lO sec, OC, 40% HF).
.Courtesy S. T. Lundin.
537
MICROSTRUCTlJHf<; U1'
C~KA1Vl1C~
Fg. 11.12. Partly dssolved quartz grain in electrical insulator porcelain (etched 10 sc(.
OC, 4~% HF, alumnum replica, 2750x. Courtesy S. T. Lundn.
.
Fig. 11.14. Electron micrograph of electrical insulator porcelan (etched 10 sec, OC, 40%
UF, silca replica. Courtesy S. T. Lundn.
540
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
a.
11.4 Refractories
Leucite
Fig. 11.15.
1300C.
Isothermal
Mullite
3Al Z 0 3 2SiO z
al
541
MICROSTRUCTURE OF CERAMICS
N
N
Ir)
.....
"'<t
0\
0\
0\
N
N
543
<')
00
0\
0\
0\
F"rg. 11.16.. Fissures in test fire-clay brick (50 grain, 50 bond) caused by (a) shattering o
lInins because they shrink more than matrix does and (b) cracking o matrix and separation
from orm because o greater shrinkage o matrix (8x). Courtesy C. Burlon Clark.
..........
o
N
r:::
.g
'C;;
E'
00
o
O
0\
.....
o
0\
...oO
O
...
..c::
542
544
INTRODUCTION TO CERAMICS
.~
"
.
L' ht rains
Basic brick. (a) Chrome ore-magnesite brick at low magn~ficat~on. Ig g F
~~'ch;o~e ore, gray pitase is periciase, a~d da~k gray ~reas are P~~Os~?~S::~~~~~~::~m;
Trojer. (b) Different chrome ore-magneslte bnck at ~Ighe~ m~~m ca t : )"n fine.grained
ore grain and magnesite grain (rounded peri~lase partlcl~s 1~.slhc~t::r:;li~e Igrain showing
bond (lSOx) Courtesy G. R. Eusner. (e) Hlgher magm ca Ion o
lamellar (CrFe)zO, precipitate parallel to the (111) plane in spinel (I380 x ). Courtesy F.
F'
11 17
Trojer.
545
MICROSTRUCTURE OF CERAMICS
.\') ..
l"i .
, .
w~
;.".,l.;..{,j7'~
~1( v",
~_'f"..
."(1.
:~,./'>,
';
:.>~"',)'./"7;. /:~f~:.
......\A,.
.~ oo>-J
':l.-..
,~ '~~'
.::."
-!"r-~ t. 1. ,
~',
1.""'+ .J;j.. .
,;':';:-1'>:+t; ~. . ): ;.:'
'. . ,,~r.. \'1("-
~ig .. l.l.17 (Con~inued). (d) Structure of magnesite grain showing rounded periclase crystab
slhcate matnx of forsterite (Mg,SiO.) and monticeIlite (MgCaSiO.) (275x). Courtesy F.
Trojer. (e) Interior of oxidized periclase crystal showing precipitate of magnesioferrilt
(Mg.Fe,O.), the Iight phase, dicalcium silicate, the dark triangular grains (I 180x). Courtesy F.
TroJer. (j) Complex structure of chromemagnesite brick showing large chromite graos 0lIl
left, angular spinel grains, rounded periclase with magnesioferrite precipitate, and gray
forsterite-monticellite matrix; dark gray is porosity (I06x). Courtesy F. Trojer.
In
546
547
548
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
549
Struct~ral.elay pro ~ k' d of tile' their manufacture is character~, dr~mplpe, a~d vano~at~~i~s efficient material handling methods,
.
::::
:~ol:e~~:~s;;;;~:
resultant
if
ucts are to compete with other constructlOn .matenals.
e .~a~n :nd
:::ria.ls are 10calIy available
d
d' g on the partIcular oca 1 y.
.
:ltrUctures, epen m
b
d" milarIy the distribution radms
lation requires that local cIays e use ,SI
commonly glacial
lor products is usually not large. The clay~ use ~dre bl amounts of
. l l
that contam conSl era e
days, shale or alIuvl~ c ays
II mixed with quartz,
impurities. !he cIay mhme.rals p.rt~;:n~::~n~~~;fm~urities inelude dolo(eldspar, mIca, and ot er lmpun 1 .'
el~YS havlingl~tvaTrl~;h~gfhC~:~~~I~~~n~por_
d
5.25.
The details of the resultant structure depen d on the particular
. '1 composito that
.
d
d but a structure Slml ar
lion of clays ~nd the finng pr~ed u;e ~s:te~ial that is underfired the clay
in Fig. 11.18 IS normal1y reac e . n .
ow strength poor resistance
phase contains many smalI pores, leadmg t~;factory pro~erties. Material
lo frost and freezing, and gene~aIlt ~~s~ temperature is mostIy a glass.
that has been fire~ to ~n ex~e~slve y t~ but leads to faBure of the entire
The lack of porosIty glves hlg streng
r l and prevents
brick when me~hanical and thermal stre~s~it~e::r~~;s. The coloring
.
oducts varying from
obtaining a satIsfactory bond wh~n use
d TI0 . these glVe pr
. l'
constituents are mam y lron an
2, bl k depending on the particular
yellow to salmon to buff to dark gray or ac,
.
.
impurities present.
As
discuss~d
In
fo ceramic
Cha~ter 8, gl~z~:werry
metals
.
ware and porcelam
are usuaIly silicate
550
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
Fig. 11.19.
Fig. 11.18.
551
Fine crystals dispersed in a mat glaze (polished section, H,PO, etch, 78x).
552
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
553
(a)
(e)
(d)
Fig. 11.20.. Microstructure of porcelain enamel. (a) Cross section of enameI-metaI nler.
~ace showmg ~ough boundary (525 x). (b) Top view of bubble structure at metal-enamel
mterface provldes space for gas evolution from metal on cooling (38x).
Glasses
Hg. 11.20 (Continued). (e) Cross section of ground coat (192 x). (d) Cross section of ground
roal and cover coat (96x). Courtesy G. H. Spencer-Strong.
MICROSTRUCTURE
INTRODUCTION TO CERAMICS
554
OF
CERAMICS
555
(b)
Fig. 11.21.
MICROSTRUCTURE OF CERAMICS
556
557
wla;h serves as precursor for the formation of the major crystaIline phase
If pbases. The amount and characteristics of the final-phase assemblage
d\rpend both on the composition and on the heat treatment. An example of
aerences resulting from heat treatment of the same composition has been
:tlbown in Fig. 8.32. By controlled heat treatment Li20' Ah03Si0 2 glasslWaIllics can be prepared in a highly crystaIline form with a particle size as
ilIIl31l as 0.05 micron (Fig. 11.22a). Since this particle size is less than a tenth
albe wavelength of light and the phases have similar indices of refraction,
1tis material is transparent. Modifying the heat treatment of the same
material gives particle sizes in the micron range (Fig. 11.22b), and this
groduct is opaque. As discussed in Chapter 8, heat treatment at relatively
Ilow temperatures at which the ratio of nucleation rate to growth rate is
naCer leads to a smalIer-particle product. The crystaIline content of the
3lIllple illustrated in Fig. 11.22 is about 85 vol% for the fine-particle product
about 95 vol% for the larger-particle materia!.
Many glass-ceramic bodies are composed of more than one phase.
figure 11.23 shows a LhO-Ah03-Si0 2 glass-ceramic nuc!eated with Ti0 2,
1m which small rutile crystals, several hundred angstroms in diameter, are
ooserved with the ,B-spodumene grains. Figure 11.24a shows a MgOAJ:O)-Si0 2glass-ceramic nucleated with Zr02, in which Zr02 crystals are
observed in the boundary regions between the ,B-quartz grains. In this case,
!he Zr2 crystals were rejected at the advancing crystal-melt interface
during crystaIlization of the major phase. Prolonged heat treatment of this
13IJle composition results in a solid-state transformation in which spinel
(orms at the expense of the quartz grains (Fig. 11.24b). Such solid-state
tIansformations are often encountered in systems used for glass-ceramic
applications in which a metastable phase first crystallizes or in which initial
crystallization at a low temperature is followed by a higher-temperature
beat treatment.
Compositional variations in the crystalline phase are characteristic of
many glass-ceramic microstructures. As discussed in Chapter 2, eucryplile, LiAlSi04 , is a stuffed derivative of ,B-quartz, and these phases are ones
commonly occurring in glass-ceramics. Variations in the amount of
a1uminum and other ion substitution in the silica structure with accompanying changes in the alkali ion content are common.
Special properties of glass-ceramics can be developed when sheet
silicates, primarily those of the fiuorine mica family, are precipitated as the
major phase in the glass-cerainic body. Such glass-ceramics containing
more than 65 to 70 vol% mica can be machined to close tolerances if the
aspect ratios of the crystals are large enough to cause contact between
Ihem. The desirable machinability is associated with basal cleavage of the
mica crystals, because of relatively weak bonding between the layers, and
558
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
f"1.11.24.
559
560
MICROSTRUCTURE OF CERAMICS
INTRODUCTION TO CERAMICS
Fig. 11.24 (Continued). (b) Same composition held at 977C for 20 hr. Spinel forms al !he
expense of previously crystallized highquartz phase. From R. H. Redwine and M. A. Conrad
in R. M. Fulrath andJ. A. Pask, Eds., Ceramic Microstructures,John Wiley & Sons, lnc., New
York, 1%8, pp. 900-922.
11.9
561
562
INTRODUCTION TO CERAMICS
generally used. Reactions occurring during firing and the phase compotliition of these materials have been discussed in Chapter 7.
Steatite compositions are a general class of dielectrics which conla1n
steatite, or tale, as a major constituent. They are extensively used CJQ1t
high-frequency insulators because of their good strength, relatively ~
dielectric constant, and low dielectric los ses. Two main phases are prestmt
in the fired body (Fig. 11.27). The crystalline phase is enstatite, whWb
appears as small discrete prismatic crystallites in a glassy matrix. Tht
high-temperature equilibrium form is protoenstatite, which converts ~
clinoenstatite on cooling. The conversion is inhibited by the glassy pha1lt,
which isolates the individual crystals, and large crystals are converttlti
more rapidly than small ones. The presence of large crystals is harmCul ~
properties, since they tend to crack, owing to differences in expanst.'lh
coefficient between the crystals and glassy matrix, illustrated in Fig. 10.4.#.
Electrical properties of steatite ceramics are largely determined by 1!Ie
amount and composition of the glassy phase. Triaxial porcelains conUlin
considerable amounts of alkalies derived from the feldspar used as a 1111.\,
.This leads to high electrical conductivity and high dielectric loss. Steati'lt
porcelains that have feldspar added as an aid in firing also have ~
MICROSTRUCTURE OF CERAMICS
563
564
Fig. 11.28. High-alumina porcelain polished and heavily etched to remove silicate .. ~~.<;.._
phase (2300x).
565
MICROSTRUCTURE OF CERAMICS
INTRODUCTION TO CERAMICS
..
. . ."
566
INTRODUCTION TO CERAMICS
..
~
l'
..
. ;'~:-+-f:
'
~'-;::':f\
.... :
~~'
~.~'~:.....
~:
,~
,-
~ ~
-.-'::JJ. f
{;~.
~ ,.~.::.
.."'.r.::~
... .
. ,",""
~'~'
~~;
~7.
. \
.,
1 ,/j.
Abrasives
.'
.....~
'.
'--r"'.
.fu.. .~
J",,'_ . ....
flg. 11.31. Microstructure of nckel ferrite. Etch pits visible in grains result fram sulfuric
,:id-oxalic acid etchant (638x). Courtesy S. L. Blum.
7'
f1J. 11.32 . Microstructure of two-phase fcrrite ceramic. Light phase is MgFe,O" dark phase
t)lgFe)O. Cracks due to microstresses are evident (SOOx). Courtesy R. E. Carter.
567
568
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
569
ps and wear more slowly, but they are not quite so hard. Silicon carbide
ps are harder and more satisfactory for grinding hard materials but tend
u1Jff3cture in use so that the life of the abrasive is shorter. In either abrasive
i1/tfi\'duaI grains are bonded to a wheel or paper or eloth with a strength
.nding on their proposed use. It is desirable that grains break out of the
ib:md material once they become duIl. Bond materials inelude fired ceramic
ib:mds and a variety of organic resins and rubbers. Fired ceramic bonds are
!XllAlively hard, provide for a long life, can be used at high speeds
" ~factorily, and account for the major part of grinding-wheel production.
, No matter what hard grain and bond material are used, the overalI
;!~l!nIcture is similar to ,those illustrated in Fig. 11.33 in which a section of a
1ilJicon carbide wheel and an aluminum oxide wheel are shown. In both the
., aJbfasive grains are held together with a glassy bond which determines the
adative hardness of the individual wheel. The alumina product ilIustrated
!i Fig. 11.33 b has a greater strength and hardness than the silicon carbide
\lIbeel, which has a larger proportion of abrasive grain to bond. In both the
~cture of the wheel is open with a large void fraction to provide for
d1icient cooling, either by air currents or liquid coolants during the grinding
.ration. This also alIows grains to fracture and break off as they become
'lrom.
11.11 Cement and Concrete
phase holds these partieles in a more or less tight grip and a c t'
of poro 't
'd
'
er am amount
SI y proVI es channels for air or liquid flow through th t
For the hard abrasiv
'. h
.
.
.
e S ructure.
usualIy used Al . e gram .elt er ~Iummum oXIde or sIlicon carbide is
. ummum oXIde grams are tough~r than silicon carbide
MICROSTRUCTURE OF CERAMICS
571
during the firing process forms a much more fluid liquid phase which gives
rise to the name me/ted cement. The main constituents in the clinker are
rllIstab/e 5CaO3AbOJ, monocalcium aluminate, CaOAb03, and calcium
dialuminate, CaO2Ab03. The unstable 5CaO3Ab03 probably has the
1Jlproximate composition 6CaO4Ab03FeOSi0 2
On reaction with water the clinker forms a complex hydrated product
Ilihich is a cementitious material. The main cementitious product that
rorms is a noncrystalline calcium silicate gel resulting from the tricalcium
silicate and dicalcium silicate present in the clinker material. Along with the
talcium silicate hydrate, calcium hydroxide is formed as a hy-product and
occurs as small hexagonal plates. The calcium hydroxide reacts with
wbon dioxide in the air or water available to form calcium carbonate. The
nesulting structure of the gel as formed after reaction is illustrated in
simplified form in Fig. 11.35. In the gel phase itself there are pore spaces
bttween the individual gel particles; in addition, there are large residual
iC3pillary pores remaining from the excess water content required to form
!he cement and place it satisfactorily. This excess capillary porosity should
~c kept as low as possible if the optimum mechanical properties from the
Iflll- 11.35. Simplified model of portland cement paste structure showing needle or platelet
f\Iltiparticles and capillary cavities C. From T. C. Powers, J. Am. Ceram. Soc., 41,1 (1958).
570
572
INTRODUCTION TO CERAMICS
MICROSTRUCTURE OF CERAMICS
ca Clll~
Calcination:
Rehydration:
573
Ilhllter present in the original mix. As the water content is increased, the
_me fraction porosity after drying is also increased; the absorption
.city of the mold is raised, but at the same time its strength and
illlnbility are reduced.
A variety of other cementitious materials are used for various applicaliioos of ceramics. These range from tars and sugar solutions to reactions
t:lh1t form oxychlorides or acid phosphates and include the use of
Ifmegrained cIay' materials as bonding agents. In al! cases the resultant
!llnJcture obtained is similar to that illustrated in Fig. 11.33, in which the
~ooding material is distributed at the contact points between grains,
lWlding them together. More or less bonding material may be required,
l6:pending on the strength desired and the properties of the particular bond
IlIled. The general characteristic that aH these materials have is a tendency
n.o form noncrystalline products. In many cases this corresponds to the
~portunity for extensive development of hydrogen bonds, which provide
JI mechanism for adherence. However, for many applications great
itTengths are not particularly required, and as long as a liquid phase
~tributes itself in positions between solid grains and then is solidified,
!bere is sufficient adherence developed for satisfactory results. The major
(oncern with regard to adhesion is first wetting and then the possibility of
deleterio'us side effects such as gas evolution, volume changes, and
adsorption of impurities at the interface; as long as these effeets are absent,
wfficient adherence is obtained.
11.12 Sorne Special Cornpositions
Fig. 11.36.
Gourdin.
574
INTRODUCTION TO CERAMICS
ILlL Carvat.
575
576
INTRODUCTlON TO CERAMICS
MICROSTRUCTURE OF CERAMICS
;t
577
578
INTRODUCTION TO CERAMICS
I,
MICROSTRUCTURE OF CERAMICS
Suggested Reading
1.
2.
3.
4.
5.
6.
7.
8.
I
as the pore size decreases and the amount of porosity increases, materiaIs
become more effective as thermal insulators. However, for use at high
temperatures, the minimum pore size that can be present without inducing
sintering and instability of volume is limited. Consequently, materiaIs
used in brick form for high-temperature insulation have a much larger
pore size than materials used at temperatures below the sintering range.
This is the main reason why powdered carbon has been useful as an
extremely high-temperature insulation; the mobility of carbon atoms is
very low, as discussed in Chapter 8, so that sintering does not take place,
and a very fine particle size material can be used satisfactorily.
l.
t,
579
E. E. Underwood, Quantitative Stere%gy, Addison-Wesley Publishing Company, Inc., Reading, Mass., 1970.
R. M. Fulrath and J. A. Pask, Eds., Ceramic Microstrl/ctl/res, John Wiley &
Sons, Inc., New York, 1968.
H. Insley and V. D. Fiechette, Microscopy oi Ceramics and Cements,
Academic Press, Inc., New York, 1955.
American Society Testing Materials, Symposium on Light Microscopy,
A.S. T.M. Spec. Pub/o 143, 1952.
G. R. Rigby, Thin Section Mineralogy oi Ceramic Materials, 2d ed., British
Ceramic Resin Association, Stoke-on-Trent, England, 1953.
A. A. Klein, "Constitution and Microstructure o Porcelain," Natl. Bl/r. Std.,
Tech. Papo 80, 1916-1917.
C. S. Smith, "The Shape o Things," Sci. Am., 190, 58 (January, 1954).
S. T. Lundin, "E1ectron Microscopy o Whiteware Bodies," Transactions oi
the IVth Intemationa/ Ceramic Congress, Florence, Italy, 1954.
Problems
11.1.
A typicaI porcelain body has the composition 50 clay-25 feldspar-25 quartz. Sketch
an expected microstructure of such a body, indicating scale, when (a) fired to
achieve phase equilibrium (l450 e C for 6 hr) and (b) fired to 1300e C for 1 hr. Explain
how and why these two different firings would affect mechanical, optical, thermal,
and electrical properties.
11.2. Suppose that the 10% porosity existing in a sintered alumina ceramic is due to a
uniform distribution of pores trapped at the interstices of particles during the
sintering process (grain boundary or bulk diffusion). Considering the initial powder
compact to be an ideal packing of spheres l micron in radius with sixfold
coordination for pores as well as spheres, that is, one pore per particle, what is the
average size of pore in microns viewed in the microsection? How many pores per
square centimeter in a microsection? Consider the theoreticaI density to be 4.00 g/ce
and the atomic weight 102.
11.3. In a triaxial porcelain fired at 1200e C, feldspar grains (K,O'Al,O]'6SiO,) melt at the
firing temperature to form a blob of viscous liquid surrounded by the product
formed by heating clay (AI,O]2SiO,2H,O). In a microstructure of a fired porcelain,
needlelike crystals of mullite (3AI,O,'2SiO,) are observed to extend into the feldspar
pseudomorplls. Discuss the kinetics of the mullite crystal growth including (a) your
choice of the most probable rate-limiting step, (b) your reasons for that choie, and
(e) how you would experimentally or analytically confirm or negate that choice.
11.4. List the following in order of importance for control of microstructure during
sintering of a typical oxide (like VO,). Justify the order with suitable numerical
580
INTRODUCTION TO CERAMICS
approximations for the range of value for each variable over which control can be
exercised:
part IV
Surface energy
Temperature
Atmosphere
Distribution of particle size
Heating rate
Bulk density (prior to firing)
Inhomogeneity in bulk density
Time
11.5.
11.6.
11.7.
11.8.
11.9.
11.10.
11.12.
How would you go about making a large-grain cOIl/rolled -oriell/a/ioll (Le., all or
most crystals oriented parallel to one another) polycrystalline ceramic? Explain the
principie on which you base your proposed procedure.
Draw c1ear sketches of the microstructure, showing pores, solid phases, and grain
boundaries, paying particular care to c1early ilIustrate the relationship among pores,
different phases present, and grain boundaries, for:
(a) A triaxial p()rcelain sintered to maximum density in an atmosphere in which the
gas would not diffuse at an appreciable rate in the solid.
(b) A single-phase crystalline refractory material such as MgO of large initial
particle size' (1 O microns) sintered at a low temperature (l500C).
(e) A single-phase crystalline material of small initial particle size (0.5 micron)
sintered to a high temperature in high vacuum:
(1) In which discontinuous grain growth has occurred.
(2) In which the firing time is much longer than that required for discontinuous
grain growth.
(3) In which discontinuousgrain growth has been inhibited.
Describe how you would experimentally determine the fractional porosity, fractional glass content, and fractional crystal content in a steatite porcelain containing
three phases (pores, glass, and MgSiO, crystals).
From a lineal analysis, estimate the fraction of porosity present in the porcelain in
Fig. 11.3. What is the true pore radius?
How would you determine the surface profile of a fired ceramic? What governs the
surface profile at equilibrium?
On examining a polished section, what characteristics of the microstructure enable
one to decide whether it is single-phase or polyphase?
You are placed in charge of the production control of a ferrite processing line which
has been recently set up without quality control. (What you are producing is a soft
ferrite for a transformer yoke at intermediate frequencies.) The process involves the
use of copper oxide as an addition to the batch which facilitates sintering because of
the formation of a liquid phase at elevated temperatures. Draw the microstructure
that you would expect to result; then list several mirostructural features which you
expect to significantly affect magnetic properties, and indicate which properties are
most strongly affected by each. For quality control, what microstructural measurements would you have set up. Give the relations between those measurements and
the microstructural features of interest. Also indicate what magnetic and other
characteristics you would have measured for quality control.
PROPERTIES
OF
CERAMICS
U
'1
;1
...
I1
~
~
The aim of a ceramist in selecting or modifying a particular composition, fabrication method, firing process, or heat treatment is to obtain a
product having certain useful properties. This requires a good understanding of material properties per se, which is of course a very broad
subject. In this book we concentrate on the ceramic aspects of material
properties-how properties can be useful1y control1ed or improved by the
proper selection of composition, forming methods, firing techniques, and
application. To do this, and at the same time avoid an excessively long
book, we do not give quantitative derivations of diferent parameters used
to describe properties. We do not attempt to present complete tabulations
of material properties.
The properties to be considered and the methods of presentation are in
large measure arbitrary; no attempt has been made to be exhaustive or
completely consistent. In general, we consider the properties of crystals;
the properties of glasses, and the properties of mixtures of these phases.
The topies presented are' based on either their gener:al importance, the
state of current development, or their particular significance in illustrating
the ceramic parameters involved.
581
12
Thermal
Properties
'7
12.1
Introduction
The properties with which we are mainly concerned are tile heat
capacity (amount of thermal energy required to change the temperature
leve!), coefficient of thermal expansion (fractional change in volume or
linear dimension per degree of temperature change), and thermal conductivity (amount of heat conducted through the body per unit temperature
gradient). Reat capacity and thermal conductivity determine the rate of
temperature change in a ceramic during heat treatment in fabrication and
in use. They are fundamental in fixing the resistance to thermal stresses
(Chapter 16) and also determine operating temperatures and temperature
gradients. A low thermal conductivity is essential for materials used as
thermal insulators. Differential expansion of different constituents of a
ceramic body or structure wi~h temperature changes can lead to substantial stresses. Many of the most common difficulties occurring in development of ceramic compositions, development of suitable coatings, glazes,
and enamels, and using ceramics in conjunction with other materials
~result from dimensional changes with temperature.
Heat Capacity. Reat capacity is a measure of the energy required to
raise the temperature of a material; from another point of view it is the
increase in energy content per degree of temperature rise. It is normally
measured as the heat capacity at constant pressure Cp, but theoretical
calculations are frequently reported in terms of the heat capacity at
583
,.-_, ..
584
constant volume
tt '" $
-' X
tet,
Ilitt'W
eb
Cv
Application of Eq. 12.7 under steady state conditions in which the ~eat
fl ux, q = dQ /. de , and temperature at each point are. independenth of t time
fl
requires an integration for the particular shape of mterest. For ea ux
through a flat slab this is
e~)" = (~~)"
cal/mole oC
(12.1)
v= G~)v = G~)v
cal/mole oC
(12.2)
C" =
C" -
Cv
Y oT
-f3--
(12.3)
(12.8)
TI
X2 - XI
(12.9)
q = - k (2nl) In D2 -In DI
..--- dx---l
.~.-
.(12.4)
Qin_
dv
a = vdT
=-kx(dydz)
_
6.v
a=v6.T
(~~)dO
Dy
_QoUI
dT
'!I.)
d kx d
(12.5)
d
= -kA T 2
For radial heat flow out through a cylinder of length 1, inner diameter DI
and outer diameter D 2 ,
585
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
Q in
Q out
(!lx;t)
(12.6)
12..
1
F Ig.
= -kA dT
dx
(12.7)
where dQ is the amount of heat flowing normal to the area A in time de.
The heat flow is proportional to the temperature gradient, -dT/dx,
the proportionality factor being a material constant, the thermal conductivity k.
dT
de
d( k dT)
pc" dx
dx
(12.10)
The similarity between Eqs. 12.10 and 12.7 and equi:alent equations for
the diffusion of material as discussed in Chapter 8 IS apparent.
.
--\t.
12.2
Heat Capacity
i\
v= (~~)v ~~5.96cal/g-atomOc
- - - 3R--/
/]1,
3Nk
(12.12)
where hvmux/k has the dimensions of temperature and is called the Debye
temperature or characteristic temperature 80 At low,temperatures the
heat capacity is proportional to (T/8o)\ whereas at higher temperatures
t(8 o /T) approaches unity so that the heat capacity becomes independent
of temperature, as indicated in Eq. 12.1!.
The temperature at which the heat capacity becomes constant or only
slighUy varying with temperature depends on the bond strength, elastic
constants, and melting point of the material and varies widely for difIerent
materials. Sorne typical values and experimental heat capacity curves are
illustrated in Fig. 12.2. As shown there, the characteristic temperature is
of the order of one-fifth to one-half the melting point in degrees absolute.
In practice, the characteristic temperature is usually determined from
heat capacity data. More detailed ahd precise discussions of the heat
x-::~~~-
..----:::x~
~~!Y~~
-~
/"'"
--
Al 0
2
-...---,-
Mullite./
x/ / /Cf
x I
1...oOI=.-'1_-L---I_..l--l._..L--L._.L---l.----I_-L-.....-L_-l.--L._.L---l.---l
-200 -100
O 100 200 300 400 500 600 700 800 900 1000 !lOO 1200 1300 1400
Temperature. (OC)
Fig. 12.2.
~ = t(hvmux/k) = t(8o)
(/V'CJ{'--t.u~~_
;; //
(12.11)
l/./t
The energy required for raising the temperature of a material from its
minimum energy state at the absolute zero goes into (1) vibrational energy
by which atoms vibrate around their lattice positions with an amplitude
and frequency that depend on temperature, (2) rotational energy for
molecules in gases, liquids, and crystals having rotational degrees of'
freedom, (3) raising the energy level of eleetrons in the structure, and (4)
c.hanging atomic positions (such as forming Schottky or Frenkel defects;
disordering phenomena, magnetic orientation, or altering the structure of
glasses at the transformation range). All these changes correspond to an
increase in internal energy and are accompanied by an increase in
configurational entropy.
The classical kinetic theory of heat requires that each atom have an
average kinetic energy of ~kT ahd an average potential energy of ~kT for
each degree of freedom. Therefore the total energy for an atom with three
degrees of freedom is 3kT, the energy content per gram atom is 3NkT,and
587
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
586
t
11
..
40.--r--r---'---'---r---.---r-~
.
589
"
'1
35
- - - ~ ~ - - . .~
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
588
-_. -....
ti;-
40
(5
~30
~
OL-L-L-L-L-JL-J---I---I---L---L---L---L--l.--'--=
, O
100
200
300
Temperature (0 K)
Pig. 12.4. Heat capacity at order-disorder transformations of (a) hydrogen bonds in
KH 2 PO. and (b) Fe' ions in Fe,O.
00
Fig. 12.3.
200
400
600
al'-
.....
l,.,'
INTRODUCTION TO CERAMICS
590
THERMAL PROPERTIES
0.600 ,----,----.,....----,---r----.--,
591
;l.
.~\
0.500
Cristo balite
c:
o
c: 3
ro
ox
Q)
';
00400
Q)
E 2
:::J
(5
>
~ 0.300
ro
1 -
,,"
First heating
o Second heating
, 0.200
Fig. 12.6.
0.100
ol-----.JL---::-:l.:----::-:l.:----::-::-:------:::
300
400
500
600
800
Temperature (OK)
Fig. 12.5. Variation of heat capacity with temperature for O.15Na,O-O.85B,O, glass. From
D. R. Uhlmann, A. G. Kolbeck, and D. L. de Witte, J. Non-Cryst. Solids, 5, 426 (1971).
usually measured (grams per cubic centimeter), depends on this value and
on the atomic weight of the constituents. Structures with simple cubic
packing of the oxygen atoms, such as VOz, have relatively low density of
atoms per cubic centimeter; with high-atomic-weight cations, such as
uranium, the measured specific gravity is high.
In contrast to structures based on cIose packing of oxygen ions, many
silicates, such as those discussed in Section 2.7, have low densities of
atomic packing. Aluminum and silicon have similar atomic weights, but
the density of Ab03 (hexagonal cIose packing of oxygen ions) is
3.96 g/cm 3 compared with a value of 2.65 for quartz, the c0:'llmon form of
silica. This low density for silicates resuIts from the network structures
required by the low coordination number and high valence of the silicon
ion. Higher-temperature forms of silica have an even lower density
(cr'istobalite 2.32, tridymit2.26), corresponding to more open structures,
as discussed in Section 2.10. As illustrated in Fig. 12.6, this is generally the
case; that is, high-temperature polymorphic forms have a higher specific
volume (lower density) than the 10w-temperature forms. This corresponds
to a discontinuous increase in volume atthe transformation temperature.
~!
.(
593
THERMAL PROPERTIES
~Repulsion energy E r
~12
.....
x
"lO
---11~0-----::::::::=--.l.:..,,,,b~ ~
'-:::.
o lIT,.",.
I
""
e
QJ
.:;
I--R o
'0
,I
>
<lJ
;;; -2 -
el-'
I
I
e
o
.;
e
ro
c.
><
QJ
ro 4
,I
QJ
-5
-4
:E
ro
<lJ
::;
f--Attraction energy Ea
-6
Fig. 12.7.
I
I
I
200
400
600
800
1200
Temperature (OC)
Fig. 12.9. Thermal expansion coefficient versus temperature for sorne ceramic oxides.
---
I
o
12
---~ 0.2
re
1\
.g
"ji
.:;
QJ
cil'
e.
e
~
'8
QJ
oC
P,e,.
e
c.
~
ro
0.1
1 + Ll T = 1 + 3
o~-~:----:::-:-----,l
O
800
1200
ro
QJ
e
--l._ _-.JO
1600
a Ll T + 3 a
Ll T
+ aJ Ll T J
= 3 a + 3 a2 Ll T + ti' Ll T 2
::J
2000
(12.13)
Temperature (oC)
Fi.g. 12.8. Parallel changes in heat capacity and therma! expansion coefficient of AI,O, over a
""
wlde temperature range.
592
=3a
(12.14)
594
INTRODUCTION TO CERAMICS
THERMAL PROPERTIES
TableI2.1.
Normal to e-Axis
AI 20 a
AI 2Ti0 6
3A1 20 a28i0 2
Ti0 2
Zr8i0 4
CaCO a
8i0 2 (quartz)
NaAI8iaOB (albite)
C (graphite)
8.3
-2.6
4.5
6.8
3.7
-6
14
4
1
Parallel to e-Axis
/---,.
9. O {Le 'II",/,,,,,L
+11.5
5.7
8.3
6.2
25
9
13
27
Crystal
595
Materia!
(fl1e;;:>Expansion
Coefficient, 0-\ OOOcC
(in./in. cc x ) 06 )
Al,O,
BeO
MgO
8.8
9.0
13.5
Mullite
Spinel
ThO,
UO,
Zircon
SiC
5.3
7.6
9.2
\0.0
4.2
4.7
Material
ZrO, (slabilized)
Fused silica glass
Soda-lime-silica
glass
TiC
Porcelain
Fire-clay refraclory
Y,O,
TiC cermel
B,C
Linear Expansion
Coefficienl,O-IOOOcC
(in./in. cc x 106 )
10.0
0.5
9.0
7.4
6.0
5.5
9.3
9.0
4.5
ti
12.4
596
ti
st
wm-t#
ti
. "
%3'
t-
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
70
597
,---r--r--r--r--r----,,..------,-----,
60
~
.".
o
x 50
E
~
~ 40
Mole %PbO
SiOz
20
40
9.00 r--=-----~---=r--__r-_T___--=r__.::,.:__=,
..c
tiJ
~ 30
.E
~ 20~,
-10
7.00
"
OLL._L-_'---'-l._---L_.....L.._-.L_.....L--l
200
..
ti'
.i::'
,_
Q)
05.00
3.00
40
60
80
PbO
Weight % PbO
Fig.12.10. Variation of density with composition in the system PbO-Si02 From R. R. Shaw
and D. R. Uhlmann, J. Non-Cryst. Solids, 1,474 (1969),
Effect of Reat Treatment. In addition to composition, the roomtemperature density of glasses depends on prior heat treatment (Fig.
3.1(b)); a rapidly cooled glass has a higher specific volume than the same
composition cooled more slowly. The transformation from a supercooled
liquid, in which structural rearrangement occurs with temperature
*J.
600
800
'Vi
20
400
Temperature (OC)
"v'
changes, to the glassy solid, in which the structure is fixed and independent of temperature, is clearly illustrated in the normal measurement of
thermal expansion coefficient which gives a result such as that shown in
Fig. l2.11. A sudden increase in the expansion coefficient occurs at a
temperature of 500 to 600C for commercial silicate glasse.s; this is
sometimes referred to as the transformation temperature but is better
referred to as a transformation range, since its value depends on the rate
of heating and prior treatment of the glass. (The decrease in length at
about 700 corresponds to viscous flow of the sample under the stresses
imposed by the measuring device.)
The dependence of expansion behavior on prior heat treatment is
illustrated in Fig. 12.12. Curve a corresponds to the lenwh observed after
the sample is held at temperature long enough to cometo equilibrium. The
time required is longer at the lower temperatures. The upper curve b
corresponds to a sample of the same composition which has been rapidly
cooled. With the rate of heating used, the same expansion coefficient
(slope of the curve) is found up to about 400; aboye this temperature the
glass contracts until at about 560 it reaches the equilibrium structure and
again expands. Curve e shows a sample which has been annealed for a
long time at 500. On reheating, th~ expansion coefficient remains
constant even aboye this temperature, corresponding to a time lag
required for structural equilibrium to be established. In curve d an
intermediate result is found for a sample with a slower rate of cooling.
These changes correspond to variations in the expansion coefficient (Fig.
12.13). AH samples approach a constant value, corresponding at low
THERMAL PROPERTIES
100
.,..-,
80
x
E
60
E
,8.
e
o
e
ro
40
";
o><
UJ
20
OL-...l::::.--L..-..L_L--'--,--'--:--'-----:-:-:-'--'-=--'---=-:-:-~=
100
200
300
400
700
Temperature (OC)
Fig. 12.12. Linear dmension changes for the same glass after different heat treatments. (a)
IdeaIly slow heating to equilibrate at each temperature aboye 400; (b) rapidly cooled; (e)
long anneal at 500; (d) slow1y cooled. Samples b, e, and d were measured at heating rate of
100C/min.
I
"
.-,
30
"'8
x
u
~
u
E
,8.
20
eQ)
"
~
Q)
10
e
e
o
";
e
ro
o><
UJ
_ 10 L--.l.---L--.JL---'--"---'_..L.....-L----I.__. L - - l - - - ' - _ L - - J
200
300
400
500
600
700
100
Temperature (oC)
598
599
temperature to the expansion coefficient of the glass and at high temperature to the supercooled liquido Behavior in the transition range is variable,
depending on the heat treatment.
In many glasses containing B2 0 3 , striking variations have been reported
in sorne of the property versus composition relations; the c1assic example
of this is the pronounced minimum in the thermal expansion coefficient of
glasses in the Na 2 0-B 2 0 3 system, originally reported at about 15 g-atom%
Na2 0. This has been referred to as the boric oxide anomaly and was
originally attributed to the conversion of B0 3 triangles to B04 tetrahedra
for alkali concentrations of less than about 15% and the formation of
singly bonded oxygens for larger alkali concentrations. Subsequent NMR
results (see Fig. 3.9) have indicated, however, that the fraction of boron
atoms in tetrahedral coordination continues to increase with increasing
alkali oxide content up to about 30 to 35 g"atom% alkali oxide. AUhough
several workers have reported minima in the thermal expansion versus
composition relation fOl- Na 2 0-B 2 0 3 glasses, they often disagree on the
location of the minima (Fig. 12.14). Much of the variation seen in Fig.
12.14 is likely associated with variations in experimental procedure,
sample purity, composition intervals selected, and the temperature range
of the measurements.
This question has been c1arified by an investigation of the thermalexpansion behavior of glasses in all five alkali borate systems,'carried out
over a common temperature interval (-196 to +25C) at narrow (l or
2 g-atom%) composition intervals. The results, shown in Fig. 12.15,
indicate the absence of any sharp minima in the thermal expansion versus
composition relations. Rather, these relations are characterized by broad,
spread-out minima, with no single composition uniquely identifiable with
a minimum. The pronounced increase in thermal expansion occurs in the
range of composition, around 30 g-atom% alkali oxide, at which the NMR
results indicate a cessation in the process of each added oxygen converting two boron atoms from B0 3 to B0 4 configurations. Beyond this range,
singly bonded oxygens are presumably formed in appreciable concentrations, resulting in a decrease in coherence of the network and an increase
in expansion coefficient. The broad minimum shown in Fig. 12.15 reftects
a competition between two processes: the formation of B04 tetrahedra,
tending to decrease the expansion coefficient, and the introduction of
modifying cations, tending to increase it. The larger the size of the cation,
the larger its effect on the expansion coefficient.
Fictive Temperature. The changes that occur in density and other
properties after cooling and during annealing in the region of the glass
transition are dependent on time in a way that depends on the thermal
history of the specimen as well as on the temperature (Fig. 12.16). One
601
lHERMAL PROPERTIES
INTRODUCTION TO CERAMICS
600
18
l'
16
x
~ 14
~I
'"~
~
~.
:j
E
::- 12
e
(l)
'
-=Q;
"O
<n
:j
10
'"x
e
o
';
e
c.
.4
.3
(l)
NazO
(o)
ro
.2
/LizO
(l)
:5 6
ro
.1
(l)
o O
-?io-U-J:L....,o"---"'"- O
'"
(l)
:::;:
Mole ~
NuzO
Fig. 12.14. Normalized lhermal expansion coefficients o sodium borate glasses reporled by
differenl invesligalors. From R. R. Shaw and D. R. Uhlmann, J. Non-Cryst. Solids, 1,347
(1969).
O
O
10
15
20
Mole
(12.15)
d'T
T
'T
dO = K(T - 'T) exp A exp B
*J.
45
25
% MzO
1/':;,-
..'
./'
,1
1.:/
.!:,.
!)'
(12.16)
THERMAL PROPERTIES
'J
:~
3.355r----r------,-----,----------,
One heating
o Two heatings
6 Three heatings
500-hr heating
"'E 3.345
-!,
~
d7 = K o[I7
dO
3.335
-'--_ _-'
550
600
',;
I
t
~
E
2
T [+ K I7
500
Q)
>
t5 400
Fig. 12.16. (a) Density variation at room temperature o medium fiint glass rapidly cooled
after long heat treatment at temperatures shown. From A. Q. Tool and E. E. HiIl, J. Soco Glass
Technol., 9,185 (1925). (b) Change in fictive temperature o samples illustrated in Figs. 12.12
and 12.13.
T exp B'
7
T [2 ] exp A
(12.17)
602
600
.a
~
The addition of the quadratic term in the brackets complicates the linear
dependence on the driving force suggested by Tool. The results can be
interpreted in terms of a spectrum ratherthan a single relaxation time. For
more detailed discussion of these points see reference 3.
12.5
700 r-.-----,--r--r-------,-.,----,---,-------,-,------,
603
.f
604
INTRODUCTION TO CERAMICS
, THERMAL PROPERTIES
contraction, and that all microstresses are pure hydrostatic tension and
compression (interfacial shear is negligiblc). Then the stresses on each
particle are given by
For comparison, the predictions of Eqs. 12.22 and 12.23 are plotted in
Fig. 12.17 for a two-phase composite body whose end-member properties
are
(12.18)
al = 12 x 1O-6 / o C
K I = 1.5
G I = 0.8
where a r and ai are the average volume expansion coefficient and the
volume expansion coefficient for particle i, D. T is the temperature change
from the stressfree state, and K is the bulk modulus, (K = - P /(D. V/V) =
E /3(1 - 2f.-L), where P is the isotropic pressure, V the volume, E the
elastic modulus, and f.-L Poisson's ratio.) If the stresses are nowhere large
enough to disrupt the structure, the summation of stresses over an area or
volume is zero. Consequently, if VI and V 2 are the fractional volumes for
a mixture of materials,
and
(12.19)
(12.20)
Vi = F;prVr
Pi
(12.21)
10 11 dyne/cm2
10 11 dyne/cm 2
PI = 1.86 g/cm 3
a2 = 4.5 x 1O- 6OC
K 2 = 3.6
lO" dyne/cm 2
G 2 = 2 X 10 11 dyne/cm 2
P2 = 2.09 g/cm 3
These values are typical of glasses in the LbO-B 20 3 system for compositions containing less than 20 g-atom% LbO, which have been shown to
exhibit phase separation (see Table 3.6). Figure 12.17 shows that the
predictions of the Turner relation (Eq. 12.22) lie below those of the
Kerner expression (Eq. 12.23) by as much as 12% for this system. The two
Kerner curves shown in the figure were obtained by reversing the role of
matrix and inclusion; with decreasing difference between the end-member
properties, the difference between the two Kerner curves decreases.
Finally, it is seen that the curve predicted by the Kerner relation is
where F; is the weight fraction of phase i, and pr and Pi are the mean and
individual phase densities. Substituting in Eq. 12.19 and eliminating D. T,
P" and V r gives an expression for the coefficient of volume expan~ion of
the aggregate which was originally obtained by Turner*
a
60S
(12.22)
13,----.,.------,--------,-----,------
An alternative model for the expansion behavior of composite materials takes into account shear effects at the boundaries between the grains
or phases. It is here assumed that the overall dilation of a composite body
is a r D. T, where a r is the overallexpansion coefficient and D. T is the
temperature difference between the initial unstressed state and the final
stressed state of the body. Analyzing the displacement of the individual
components and applying continuity relations at the interfaces, the
overall expansion coefficient can be expressed by the relation first
'
obtained by Kernert
x
e
Qj 8
o
'
~
6
x
5
4 L -_ _- ' -_ _- L_ _--::-'-".-_----=-'::-_-;-'
~'"
,,'
0.2
0.4
0.6
0.8
1.0
Volume Iraction 01 second phase
Fig. 12.17. Comparison of predicted therma1 expansion coefficients of a two-phase material.
From R. R. Shaw, Ph.D. thesis, MIT, 1%7.
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
606
25 r - - - - - - - - - - - - r - - - - - - r - - - - - ,
Al
607
0.6 r--r--,---,--....,--,-----,-----,
'"o
0.5
); 20
~
~
e
ID
15
lE
ID
o
e
o
Vi 10
e
ro
a.
ro
ID
: 0.2
"
ID
~
ID
e
::i
75
Weight per cent oxide
Fig. 12.18. Thermal expansion coefficients of end members nd intermediate compositons
in the systems MgO-W and AI-Si0 2 glass. The solid lines are calculated from Eq. 12.22. After
W. D. Kingery, J. Am. Ceram. Soc., 40, 351 (1957).
0.1
lI
tr
expansion coefficient for use in Eqs. 12.22 and 12.23 can be derived by
substituting (.6 V / V o .6 T) in place of IX for each phase for the temperature
range concerned. This confirms that substantial stresses and changes in
the overal1 expansion coefficient are to be expected at the transformation
temperatures.
Microstresses. The stresses developed as a result of large differences
between the expansion coefficients of two materials or in crystal10graphic
directions in a composite are sufficient to cause microcracks to occur in
the body. These fissures are of great importance for understanding many
practical properties of real ceramics. We have already il1ustrated them for
a number of systems. One important result of these microfissures is
hysteresis in the thermal expansion coefficient measured for a polycrystal1ine aggregate or a composite body in which large stresses are developed. This occurs, for example, in some Ti0 2 compositions (Fig.
12.20). Polycrystal1ine titania, when cooled from the firing temperature,
develops microcracks, and as these form, the overall observed expansion
coefficient is lower than the expansion coefficient of the individual
crystals. On heating, these cracks tend to close, and at low temperatures
abnormally low expansion coefficients are observed. This kind of expansion hysteresis occurs particularly in polycrystalline compositions when
the expansion coefficient is markedly different in different crystalline
directions. It also occurs for mixtures of materials having different
expansion coefficients.
608
INTRODUCTlON TO CERAMICS
THERMAL PROPERTlES
609
+O.s- -
Ea
liT
a=--1 - J.L
(12.24)
. +0.4 ..
c
'"Oc:
+0.2 0.0
200
400
Restraining
force
Fig.12.21.
+ 6f)
(12.25)
(12.26)
~b
(12.27)
(12.28)
INTRODUCTION TO
610
611
THERMAL PROPERTIES
CE~MICS
7,
I
0.5
0.4
e
o
e
ro
o.
x
';;
0.3
0.2
Fig. 12.22.
0.1
00
200
600
400
Temperature (OC)
800
(a)
-5,000
Tension
O
~
.;;
e
'"'"
5,000
t
10,000
15,000
Fig. 12.23.
cooling.
200
600
400
Temperature ("C)
800
(b)
(a) Expansion of glaze and porcelain bodies and (b) stresses developed on
?
high-expansion glass-ceramic bodies in the Na20-BaO-Ab03-Si02 systemo In this case, compressive stresses in the range of 25,000 psi and
overaIl strengths in the range of 38,000 psi can be obtained. * Such
strengths permit the tableware based on these materials to be guaranteed
for 3 years against breakage.
*See D. A. Duke, J. E. Megles, J. F. MacDowell, and H. F. Bopp, J. Am. Ceram. Soc., 51.
98 (1968).
612
ti
INTRODUCTION TO CERAMICS
THERMAL PROPERTIES
~.
!L = k aT =! Nvl aE
ax 3
ax
A
Since
Ne;) = N(;~)e;) =
(12.29)
(~;)
(12.30)
lf c(w)vl(w)
7
?
dw
=3
(12.32)
"
rr
lb tttttd
613
where e (w) is the contribution to the specific heat per frequency interval
for lattice waves of that frequency and 1(w) is the attenuation length for
the lattice waves.
The major process giving rise to a finite thermal eonductivity and
energy dissipation from thermal elastic waves is phonon-phonon interactions corresponding to phonon scattering called Umklapp processes. In
addition to phonon interaction, which is important over a wide temperature range, various lattice imperfections give rise to anharmonicities and
result in phonon scattering, which further decreases the mean free path
and affects the conductivity. At sufficiently high temperatures, generally
aboye room temperatures, the imperfection scattering is independent of
temperature and vibrational frequency for all types of imperfection. At
low temperatures a variety of different scattering mechanisms resultirig
from the lattice imperfections gives rise to a number of specific results. If
more than one process is operative, the effective value of 1/l is found by
adding 1/l for each process; this corresponds approximately to additivity
of the corresponding thermal resistances for operative processes. Effects
of impurity defects and microstructure on the thermal conductivity of
dielectrics have been experimentally investigated with results in general
agreement with theoretical predictions. The mechanism and temperature
dependence of phonon conductivity in dielectric solids are quite well
understood.
\
Photon Conductivity. In addition to the vibrational energy in solids, a
much smaller fraction of the energy content results from higherfrequency electromagnetic radiation energy. Because this fraction of the
total energy is so small, it is usually neglected in discussing heat capacity
and thermal conductivity, but it becomes important at high temperatures
because it is proportional to the fourth power of temperature. The energy
per unit volume of blackbody radiation at temperature T is given by
E
= 4(m 3 T 4
e
(12.33)
614
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
..,
"
l..>
16 un 2T 3 1r
kr = 3
(12.35)
!
~
!
i
(12.36)
rI
'l
615
250
--r-----,----------r---
200
;::;
~
.:;
150
~
Vl
'i
Ti02
ro
- - - - Mullite'
E 1bo
Q.l
.<::
f-
Berman (1951)
50
(BeO
O~::..:::.::.~=:::::::::..l..----l..--L----.J
o
800
1200
1600
0"
Temperature ("K)
Fig.12.25.
o~
Berman (\951)
0.30 ----
,-
-.--_ _--...
,.....
'b~_Q_o----tr"'--=--0_ 0 _ 0 -0 _
0.20
oS
-5
ro
CL
Q.l
~
e
ro
Q.l
0.10
::;:
Fig. 12.24. Thermal conductivity of single-crystal aluminum oxide over a wide temperature
range.
O~==--~===-~--~_=__---l--800
1200
1600
2000
Temperature (oKl
~ll'~ 12.2?
Inverse phonon mean free path for several crystalline oxides and for vitreous
Sllca (Kmgery, 1955).
616
617
INTRODUCTION TO CERAMICS
THERMAL PROPERTIES
Table 12.3. Thermal Conductivity of Quartz (Birch and Clark, 1940) and Rutile
(Charvat and Kingery, 1957)
618
619
Temperature (oC)
Si0 2
Normal to e-Axis
Parallel to e-Axis
00016
0'0012
00010
0'0084
0'0074
00240
00027
00019
00015
0'0012
0'0010
00158
O
100
200
300
400
200
Ti02
Ratio
169
1'58
. 1'50
143
135
152
0.30
""'e
r:-l'
-----.
;t=
0.10
<ll
Vl
::J
..:~
I
~
.;;
Carbides at
1100 F
0
0.03
=e::J
0.01
Oxides at
ro
1475 F
0
E
<ll
30
100
300
Fig. 12.27.
carbides.
expected in ceramic oxides has been found in beryllia. At low temperatures, below room temperature, this effect leads to observable scattering
resulting from the presence of different weight isotopes.
Boundary Effects. The scattering of phonons at grain boundaries
results in a maximum for thermal conductivity at very low temperatures,
as illustrated in Fig. 12.24. For materials at room temperature, the phonon
mean free path has decreased to values somewhat lower than 100 A, as
illustrated for several materials in Fig. 12.26. At higher temperatures these
values are even lower, and the crystallite size which is necessary for
phonon scattering at boundaries to beco me important relative to other
scattering processes is extremely smal!. It is perhaps of importance for
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
620
621
200 r----,.----------r----,---.,..----r---~
150
ro
100
<l!
Vl
50
2000
0.04
"
YE
u
~
E
0.03 -
Singlecrystal Ti0 2
TI to e axis
'1 u
<l!
Vl
ro
.!:!
.o 0.02
'>
:;:
u
::J
"O
ro
<l!
-'=
1-
""
""____
"
'\r.
)(->:->:
y:"
_ x_ _x-><-sin'gle.crystal Ti0 2
4' t..J:o e axis
0.01
---......
Polycrystalline Ti02
--C-""-'I=::2::::;:=::=:::~Si~ngle.crystal CaF2
Polycrystalline CaF2 28/L
200
600
Temperature
(al
Fig. 12.28.
800
("C)
Fig. 12.28 (Continued). (b) Resistivity of sing1e-crystal and polycrystalline AhO" TiO" and
CaF,. From Charvat and Kingery, 1957.
Impurities and Solid Solutions. In much the same way that comptex
structures and atoms of different size lead to increased anharmonicity and
a lower conductivity, the presence of impurity atoms in solid solution
leads to a decrease in the thermal conductivity. The effect of impurities
can be treated in terms of the mean free path related to a scattering
coefficient for the impurity center. The effects causing phonon scattering
arise from differences in mass of an element substituted in the lattice,
differences in binding force of the substituted atom compared with the
original structure, and the elastic strain field around the substituted atom.
Impurity scattering increases as the temperature is' raised at very low?
temperatures, but it becomes independent of temperature at temperatures 7
greater than about half the Debye temperature, as might be expected,
since the average wavelength is comparable with or less than the size of 7
the point imperfection for this temperature range. The numerical factors
,
required to apply this theory quantitatively to ceramic systems are not
well known, and the results may be uncertain by an order of magnitude.
The inverse mean free paths for different scattering processes are
additive:
1
1
-1= - +-+ ...
Ltolal
flhermal
llmpUrllY
(12.37)
622
INTRODUCTION TO CERAMICS
THERMAL PROPERTIES
0.07
I
\
623
..------,.----,----,---~-~
,)
0.06
IOO..-----,..---.,-----,---..,-------:r----,---,----,
"8
~
VI
o-~---
60
-o--~~
-:;
.:;;
',o::
. .-
40
.~
.-.
0--
0_--
__
Q)
...
0-
ro
~
~
_ __ -
0--
40Q0;(~olycrystallineJ
2000C
~sing'ecrystail
s
t; 0.03
rI
.-'
cr: 20
~
~0.04
Vt
._600C
:::J
'O
c:
~ 0.02
(;j
0.05
--!:;.
80
---'"E
_ -0- - ---
1000 oc
"'i"
~
~
..c
f-
0.01
00
Fig. 12.29.
4
Vofume % CrZ03
ar NiO
Cr20,-AI,03~olutions.
(-
r.
MgO
Fig. 12.30.
60
80
100
NiO
.r
'
'i
INTRODUCTION TO CERAMICS
624
0.035,---...,.----,.---,--..,..---,.---,--.,-----,.-
10,----r--....,------.-----,.--,----r-----,
1) Th Oz.o
2) U02.00
3) UOz+x
4) Tho.9UO.102+X
5) Th o.74 U OZ6 0z
6) UOZ.l8
7) Tho.74 LJ O.Z6 02+X
8) Tho.69UO.3102+X
u
o
.,g 0.025
u
QJ
'"
'"E
u
1>
o
I
0.015
............
5
~ 10-1
'"
~
-o-c-o_ o __
:l
-o
e
o
Quartz crystal
..!3
"'$4
.~
625
THERMAL PROPERTIES
0 ......
....
.~
0
- ".,- 6
E
~
r.
f-
0005
..----9-0
--.-
a---o--
o~_.o_-.-.--.-_-.--~._
8
~_.'--_.l.-I _---..L-_...LI_---'_ _L - _ - ' - _ - - - ' - _ - '
o
200
400
600
800
Temperature e
Fig. 12.31. Thermal conductivity data for various compositions in the U0 2-Th0 2-0 2
system.
--
/'
10-4 ~--'---'----I----I..-.....JI---..l----'
2
10
20
50
100
200
500
Temperature K
Fig. 12.32. Effect of neutron irradiation on the thermal conductivity of crystalline quartz and
vitreous silica.
solid solution is formed in which Ca2+ and He+ substitute for ZrH ; 0 2vacancies are formed to balance the charge deficiency. For compositions
approximately 92Zr0 24Hf0 24CaO, a calculated phonon mean free path
of 3.6 is in general agreement with the complex solid solution formed.
Neutron Irradiation. When a crystalline material is irradiated with
neutrons, the resultant structure contains displaced atoms and lattice
strains corresponding to the presence of impurities but with larger
associated strain energies. As a result, neutron irradiation leads to a
decrease in the thermal conductivity that is particularIy important at low
temperatures, as illustrated in Fig. 12.32.
12.8 Phonon Conductivity of Single-Phase Glasses
In the same way that the thermal conductivity of highly disordered
crystals such as the (Th,U)02+x composition shown in Fig. 12.31 has a low
value, glasses, with their completely noncrystalline structure, are found to
have a phonon mean free path that is limited to the order of interatomic
distances by the random structure. This fixing of the mean free path by
the structure leads to a much more limited range of thermal-conductivity
values for glasses than is found for crystals.
627
THERMAL PROPERTIES
0.0200 r------,---..,-----r--,---------,---,.-----,--,----,
0.002 r - - - - , - - - - - ,
;j
i
8
u
Tu
QJ
Vl
ro
0.0100
.u
:::J
"O
o
u
ro
E 0.0050
ID
..c
1-
oO
400
800
Temperature
1200
2000
(oK)
significant variations do occur among different compositions. Experimental data for a variety of compositions, sorne of which are illustrated in Fig.
12.34, range between a value of about 0.0033 cal/sec oC cm2 at room
temperature for fused silica to a value of 0.0013 for a glass containing 80%
lead oxide. In general, the thermal conductivity of fused silica is similar to
that found for soda-lime-silica glass, and these values are larger than
those observed for borosilicate glasses which in tum are higher than
values found for high-index optical glasses containing large fractions of
heavy metal ions.
The mean free path of phonons in fused silica, soda-lime-silica glass,
and Pyrex glass has been estimated from the elastic wave velocity,
volume heat capacity, and thermal conductivity values, as illustrated in '
Table 12.4. The experimental finding that the mean free path of silica is
greater than that of a soda-lime-silica glass and is still greater than that of
a Pyrex composition is established beyond experimental error and
suggests that the more complex structure in the borosilicate and soda-lime
glass more severely limits the mean free path.
Table 12.4.
G!ass
Fig. 12.33. Thermal conductivity of fused silica over a wide temperature range.
k
(ca! cm/sec oC cm 2 )
p
(g cm S)
(ca! cm-S
C-l)
220
247
223
0'0037
00037
0'0026
039
050
042
v = yI(E/p) 1 = ~/lcv
(cm sec- 1)
5,5 x 105
5'2 x 105
5,5 x 10 5
5'2
43
3-3
0.006.--.-----r---,--r
'",
E
u 0.004
,
U
o
u
u
QJ
0.002
CJ)
.s
.><::
(Sodo-lime-si.I..i.C..0............................/
........-:.....
Fused Si02
=:::;:-~~ .
'.'
"
12.9Photon Conductivity
~:B""iI'"t' (", ,:
~b(BO)O
:-:-:-_--::-:-=---=-=-=-_:-::-::----:-:::::----;::-;
O L . - _ - L . _ - - - l_ _
-200
600
Fig. 12.34. Thermal conductivity of severa! g!ass compositions. From Kingery, 1949;
Ratcliff, 1960.
626
kr
=16(m2T3=16
3
3 lTn
2T 3{
r
(12.38)
when a, the absorption coefficient, and 11, the index of refraction, are
assumed independent of temperature and wavelength. However, these
depend on frequency, particularly the absorption coefficient.
628
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
1)
629
ISOe}
.'"
Q;
o
u
c:
o
+=
Q.
In
.n
00.1
E
u
'"
Q.
(f)
2.
345
7'); J ~
Wavelength (1')
Fig.I2.35. Absarptian caefficient far single crystals and glasses at different wavelengths and
temperature levels. From Lee and Kingery, 1960; Neurath, 1952; Grove et al., 1960.
INTRODUCTION TO CERAMICS
630
631
THERMAL PROPERTIES
50r------,----,----r-------'----,
100.----..~
10
Alz03 single""
...-Alz03-Crz03
crystol
......,....'"
single crystol
e
.Q
VJ
VJ
75
'EVJ
e
o
--Vycor gloss
=:
~
E
<>
(
i
. i
e
o
.;
(J)
'E
~ 50
o
0.04
~
~
Sintered Al Z03
Porosity =0.25%
Fritted vycor gloss
Porosity= 2.6 %
25
0.01
Sinte red Al Z03
Porosity =3.0%
0.001L-.-----.l..--.l---'------:------'
100
500
1000 2000
Temperature K
Fig. 12.36. The temperature dependence of the integrated mean free path for various
materials. Preeision of high values is about :!:100%.
small compared with the sample size. For single crystalsand for most
measurements of glass conductivity, this is not the case; as a result, the
measured conductivity is actually less than would be observed for a large
specimen. This is illustrated in Fig. 12.38, in which data for single crystals
of alumina and for silica glass are compared with calculated values. The
effects of boundaries are discussed subsequentIy.
For samples in which radiation conductivity is appreciable, the temperature dependence of the overall heat transfer changes from a negative
to a positive exponent, leading to a minimum in the experimental
conductivity.
\ Effects of Boundaries. Just as the thermal conductivity of crystals is
limited at low temperatures when the sample dimensions become the
0.01
0.02
Volume fraction pores
0.03
Fig. 12.37. Transmission of polycrystalline alu mina containing small amounts of residual
porosity (equivalent thickness 0.3 mm).
same order of magnitude as the phonon mean free path, and boundary
effects predominate in gas conduction at low pressures when the molecular mean free path is large, boundary effects are found to predominate for
photon conductivity when the sample size is similar to the photon mean
free path. This boundary effect has led sorne authors to emphasize the
limitations of assigning a conductivity value to the photon process and to
treat photon conductivity as something quite different from other heattransfer processes. We prefer instead to emphasize that boundary effects
are important for all conduction mechanisms and that the development of
photon conduction theory is exactIy parallel to that for other energytransfer mechanisms.
There are three photon energy-transfer processes that can be separately identified for energy transfer between two boundaries separated by
632
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
,/
u
o
1,'
0.1
'1
/.1
U
QJ
:>::
lenglh =2.22 cm
(abserved)
//
Vl
~
~
,1
I
,j -- Fused SiO z
!1
(abserved) .
"
0.01
...
2S
0.001
/1
Fused 5;02 -"/' /
(calcu1ated)
633
(12.39)
/
I
I ~- Vycor glass
'-"
(12.40)
(abserved)
length = 5.1 cm
(abserved)
Temperature K
(12.41)
..
The ratio of the observed radiant-energy transfer when the mean free
path is large compared with the sample size and the maximum photon
conductivity for an infinitely large sample is, to a first approximation,
given by
for P < 1
any material. First, energy may be transferred directly from one boundary
to the other without interaction with the intervening material. In this case,
the only effect of the material is to alter the photon velocity, and
eonsequently the rate of heat transfer, but its own temperature is not
affected by and has no infiuence on the rate of heat transfer. Second,
energy may be transferred by photon energy exchange between the
boundary and the material. This transfer is limited to a region having a
thickness of the order of magnitude of the mean free path of the photons,
and the rate of energy exchange is determined by the temperature of the
boundary and the temperature gradients in the material. Third, energy
may be transferred by photon processes within the material, independent
of the boundaries. This last is obviously the only process which can be
described as a material property; it has been discussed in previous
sections.
Boundary effects are important as a practical matter because the values
of photon mean free paths commonly found for ceramic materials, 0.1 to
10 cm, are the same order of magnitude as common sample sizes.
(12.42)
which only applies when the ratio P is much less than unity. Under these
conditions the observed conductivity, that due to boundary conditions, is
only a fraction of the expected eonductivity based on an infinite samp1e
size. The ratio of these values is given for different optical thicknesses
and boundary emissivities for single-crystal alu mina, clear fused silica,
and Vycor glass in Fig. 12.39. Increasing the ratio dllr by increasing the
sample thickness increases the apparent conductivity. The importance of
the emissivity of the boundary as well as the sample thickness can be seen
from the increased apparent conductivity of samples bounded with
graphite rather than platinum.
At the boundary regions, where radiation interacts with the material
over a finite photon mean free path, the energy emission from an opaque
boundary or uniform temperature region such as a furnace enclosure is
given by
(12.43)
where e is the emissivity of the surface. If photon energy transfer is an
634
INTRODUCTION TO CERAMICS
THERMAL PROPERTlES
635
0.20 ~---..-------,-----r----'------,
{'iJ
Al z0 3
single o
crystal.
0.16
1750
\
:.::
Vycor gloss o
Fused SiOz A
"-
~ 0.12 -
1700
>,
o
3:
>
o
u
"O
.8
u
4-
4QJ
Vl
'-
o...
O'
0.08
.2
E
:J
'6
QJ
"O
QJ
'c
i5
'0
-O
05
-L.
1.0
1.5
d;..e (dimensionless)
-L
2.0
--'
Fig. 12.39. Effect of sample size and boundary material on the fractional transfer resulting
fram direct exchange between boundaries. From Lee and Kingery, 1%0.
O
12.10
16002
QJ
a.
QJ
1-
1550
1500
2.5
:J
.....
O'
O'
...l-
.l.-
E
0.04
1650
20
40
60
80
Distonce from surfoce (cm)
100
1450
Fg. 12.40. Calculated changes in temperature gradients near boundaries in a glass tank.
After Walther et al., Glasteeh. Ber., 26, 193 (1953).
(a)
( b)
(e)
Fig. 12.41. Idealized phase arrangements. (a) Parallel;a~~((b) continuous major phase; (e)
continuous minor p h a s e . ) ' /
r"Lt-VJ'
many microstructures. It is characteristic of the orm o porosity normally present. A discontinuous major phase (Fig. 12.41 e) with a minor
phase appearng as a continuous boundary material, or example, is
typical o the glass bond distribution in many ceramics, the metal
636
_,
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
0.07
"
...
'
637
r----------,-----,------,r-----,
0.06
.!2.
u
0.05
.!2.
u
Q)
(12.44)
wher.e v J and Vz are t~e volume fraction of each component, equal to the
frachon of cross-sechonal area. Under these conditions, the heat conduction is dominated by the better conductor; if kJ ~ k z, km = vJk l In
con~rast, for heat fiow perpendicular to the plane of the slabs, they are
eqUlvalent to an electrical series circuit, the heat fiow through each slab is
equal, but the temperature gradients are different. The total conductivity
is given by
::; 0.04
ro
,.
.;;!.
.;:-
~u 003
.
:::J
U
0.02
Q)
oC
1-
0.01
(12.45)
20
40
60
80
100
or
(12.46)
(12.47)
ni
Fig. 12.42.
638
INTRODUCTION TO CERAMICS
THERMAL PROPERTIES
In this equation (T
4
1 -
T2
(12.48)
q =4n2creclfATm3 T
(12.49)
Considering heat transfer across a f1at cavity, with paraIJel sides and
thickness dp , an effective conductivity is defined by
(12.50)
An effective concluctivity is thus defined which gives the proper heat flux
when inserted in the normal thermal conductivity relations:
(12.51)
Consequently the effect of radiation on pore conductivity is proportional
to the pore size and to the third power of temperature. Pores of larger size
639
10 -5 L--.l_-L_.L-.L.L_~----:-:~~:::-:=--::=--:::
o 200 400 600 800 1000 1200 1400
Temperature (OC)
Fig. 12.43.
transfer.
Effective thermal conductivity of pore spaces for conduction and radiation heat
size porosity remains a good barrier to heat f1ow. The calculated conductivity of different-size pores over a wide temperature range is iIlustrated
in Fig. 12.43.
Although the above discussion is valid for opaque materials, most
ceramic materials are more or less translucent and transmit a considerable
fraction of the incident radiation, especially in thin sections; the Iatter
effect must be considered in real cases. If we think of. the material
surrounding the pores as radiation shields which diminish the radiant
transfer we can see the physical significance of the previous sections: the
smaller ~he pore size and the larger the porosity, the more pores or shields
there are across the radiant flux, and the radiant transfer, or the effective
photon conductivity, is decreased. On the other hand, the higher the
emissivity, the greater the transfer between surfaces and the larger the
effective conductivity.
640
O.OZOr--,---,---,-----r-------,----r-,--,--,
INTRODUCTION TO CERAMICS
t>
N.,
\~s"";m"
'E
0.016
..5
u
"\.\~fter
~.~
/Specimen No.2
reheoting
specimenNa.2~ ~~
0.012
V1
"6
u
betare reheoting./
~ ......
o_~t>
:~
~ o.ooa
11-
o-";::;o-..!11_11 o
11
-o
e
).'Specimen NO.3
ofter reheotir1g
(5
0-0_0.
0--0---0
U;
-c 0.004
1-
---.L_-LI_~I~_L~::-!:-:::--.lL---;::;S;--..L-~
oo
200
400
600
Temperature
1000
oC
Fig. 12.44. Thermal conductivity of po\ycrystalline titania samples after various heat
treatments. From Charvat and Kingery, 1957.
0.07,----..,-------,:----,-----,---,
l'''~
!3 0.05
o) 200 cl Mognesio.spinel
b) 600cl
D
e) 200 cl Alumino -zireonio
d)
aooDel
-;'0
QJ
VI
"8 0 .04
'S
:~
g 0.03
-o
8u
'O
E 0.02
QJ
.c
1--
o0!---~-----:!4;::-0---;:61r;0----;~--~IOO
Volume % zirconia or spinel
Fig. 12.45. Therma\ conductivity for MgO-MgAbO. and Al,O,-ZrO, two-phase systems in
which grain-boundary microcracks occur.
641
643
THERMAL PROPERTIES
INTRODUCTION TO CERAMICS
642
as a result has a large infiuence on the resulting conductivity. Data for the
MgO-MgAb04 system and the AI 20 3-Zr02 system are illustrated in Fig.
12.45. In bo'lh cases, microstructure studies indicated that cracks formed
along grain boundaries.
The effect of heating and reheating results from increased cracking on
cooling or by annealing of cracks previously present. The opening and
clpsing of such cracks also give a hysteresis loop in measurements; this
phenomenon has also been observed experimentally in aluminum titanate
and in anisotropk metals. The much lower conductivity of marble than
that of single crystals of calcite is attributed to this phenomenon.
Typical thermal conductivity values for a number of ceramic systems
are collected in Table 12.5 and Fig. 12.46. In general, materials with a high
0.1
Pure dense EeO
.,
.!2.
~_J/
J-1
1.!2.
u
Q)
0.01
ro
.:;
:;
'O
Material
100C
ro
lOOOC
Q)
.c
1-
,AbOa
BeO
MgO
. MgAI 20 4
Th0 2
Mullte
U02.00
Graphite
Zr02 (stabilzed)
Fused silca glass
Soda-lime-silca glass
TiC
Porcelain
Fire-clay refractory
TiC cermet
0.072
.525
.090.
.036
.025
.014
.024
.43
.0047
.0048
.004
.060
.004
.0027
.08
insulating firebrick
~l/tID:.....::J
Powder~d
./
,;/o--
MgO
1}{}t..{L'C';:~
0.0001
0.00002 O
,.l
.014
.0045
.0037
.02
~2000DF
0.015
.049
.017
.014
.007
.009
.008
.15
.0055
.006
2S00DF
insulating firebrick
E 0.001
400
SOO
1200
Temperature
Fig. 12.46.
2000
Ce)
range.
644
INTRODUCTION TO CERAMICS
THERMAL PROPERTIES
Suggested Reading
l.
2.
3.
4.
5.
6.
7.
8.
12. 11.
C. Kittel, Introducton to So/id State Physics, 3d ed., John Wiley & Sons, Inc.,
New York, 1968.
De Launay in F. Seitz and D. Turnbull, Eds., Salid State Physics, Vol. 2,
Academic Press, Inc., New York, 1956.
J. D. Mackenzie, Ed., Modem Aspects of tlle Vitreous State, Vol. 3,
Butterworth, London, 1965.
R. H. Doremus, G/ass Science, John Wiley & Sons, Inc., New York, 1973.
W. D. Kingery, J. Am. Ceram. Soc., 42, 617 (1959).
W. D. Kingery, "Thermal Conductivity of Ceramic Dielectrics," Progress in
Ceramic Science, Vol. 2, J. E. Burke, Ed., Pergamon Press, New York, 1961.
Engineering Properties of Se/ected Ceramic Materia/s, The Am. Ceram. Soc.,
Columbus, Ohio, 1966.
1. E. Campbell and E. M. Sherwood, Eds., High- Temperature Materia/s and
Teclln%gy, John Wiley & Sons, Inc., New York. (1967).
Problems
12.1.
12.2.
12.3.
12.4.
12.5.
Explain why the thermal conductivities of glasses are often orders of magnitude
lower than those of crystalline solids.
For glasses in the O to 50% KzO, lOO to 50% SiOz composition range, predict the
thermal expansiono Explain the results in terms of (a) the melting point of the
compositions and (b) the structure of the glasses.
On the basis of your knowledge of the Al zO,-CrZ0 3 system predict the nature of the
curve of thermal conductivity versus composition for single crystals and
polycrystals.
Drawa typical thermal conductivity versus temperature curve (10 to 20000 K) for a
glass and a crystalline material, and explain the similarities and differences.
A porcelain of composition 25% quartz (- 200 mesh), 25% potash feldspar
(- 325 M), 15% ball clay (air-lIoated), and 35% kaolin (water-washed) was fabricated
into specimens by slip casting and divided into three groups. Each group was fired at
one of three temperatures for an hour (1 200C, \300(:, 1400C) but was not labeled,
and the student lost his record. He had available a recording dilatometer for
measuring thermal expansiono How can he teH at which temperature each group was
fired?
lf dense polycrystalline samples of several compositions across the MgO-CrZ03
binary were examined for thermal conductivity as a function of their composition,
describe their expected relative thermal conductivity with an appropriate plot.
Assume that samples are quenched rapidly from 1800C anO. tested at (a) room
temperature and (b) 400C for thermal conductivity.
12.6.
12.7.
12.8.
12.9.
12.10.
\.,
645
Calculate the effect on the thermal conductivity of ThOz (90% dense) at 1500C of
varying the pore size from 0.2 in. in diameter to 0.02 in. in diameter when the pores
are isolated.
12.12. (a) Estimate the thermal conductivity of fused silica at room temperature.
(b) At what temperature would heat transfer by radiation equal phonon thermal
conductivity for a glass of average optical absorption coefficient 7 cm within a
piece I m thick? (Velocity of elastic waves = 5000 m/sec, specific heat =
0.22 cal/g, density = 2.2 g/cc, refractive index = 1.5.)
12.\3. Discuss the effects of porosity on thermal diffusivity in pure MgO at (a) low
temperature, where lattice conduction is predominant, and (b) at high temperature,
where radiation conductivity is predominant.
647
OPTICAL PROPERTIES
13
-e
Optical
Properties
Many different optical properties of ceramic products are of concern in
different applications. Perhaps most important are those optical glasses
and crystals used as windows, lenses, prisms, filters, or in other ways
requiring useful optical properties as the primary function of the materia!.
AIso, however, much of the value and usefulness of products such as tile,
ceramic tableware and artware, porcelain enamels, and sanitary ware
depends on properties such as color, translucency, and surface gloss.
Consequently, optical properties are important in one way or another for
1110st ceramics.
The variety and complexity of optical properties of potential interest
make it essential that we restrict our attention to a few of the major
aspects of the problem, rather than attempting any comprehensive
treatment. In doing this we first consider properties important for use in
optical systems-the index of refraction and dispersion. These properties
form the basis for extensive applications of optical glasses. Then we
consder various aspects of light reflection, scattering, reflectance, translucency, and gloss. Finally, we consider light absorption and color
development and control in ceramic systems and sorne more recent
applications.
-Y
v2 = 2v
where
[_1
+ _1]
Me M"
(13.4)
s a force constant and Me and M" are the ionic masses of caton
lag 10 (wavelength, A,
J.Lm)
-2
-4
10
\
Metal \
8
L,
l,
'"e-'"
,2
Q. 5
(;
U)
.D
ro
13.1
'O 4
x
Introduction
Visible spectrum
Q)
= n - ik
646
(13.1)
-'=
Dielectric
2
f.--
Fig. 13.1.
dielectrics.
Radio
...----
~.....,.--
-------J
Infrare d .,
Optical
L.-Ultra~
"violet
'---X-ray--'
f-oE.
,.J
-y-raY"--1
Table 13.1.
<
Ultraviolet
.2
.1
----4-- Visible
.3
.4
Near IR
.5 .6 .7 .8.9 1
L16
QCl
I 1.
35
Titania (TiO l
1. 12
6.8
1
7
7.51
1.15
IA5
8.51
126
[.25
9.2
9.5
9.5
13
[.13
9.61
L13
11.81
12 1
.75
L6
16
121
131
14.51
I
I
?'
114
1.13
11.2
129
1 1.55
1.48
I I
Germanium (Ge)
231
251
251
251
30
30
31
.4
1.25
351
381
40
40
1.45
1 .38
471
1.55
.2
1.25
I
I
221
.2
16
1.42
1
15
.4
.2
1.21
Silicon (Si)
11.8
Sodium lodide (Na!)
Sodium Chloride (NaCI)
Potassium Chloride (KCl)
Silver Chloride (AgCI)
15
15
15
125
,;,.
Il:>
5.51
115
Extreme IR
40 50 60
551
6.2
12
30
5.~
.IA3
.39
20
4.21
1. 2
<:l'\
41
L18
-J_.L"
+Middle IR-+-Far IR
3
4
5 6 7 8 910
50
551
70
1
80 100 Microm
650
INTRODUCTION TO CERAMICS
OPTICAL PROPERTIES
LiF
15
NaF
r'j
.
.
D IsperSlOn
dn
di\.
(13.6)
and this value can be determined directIy from Fig. 13.3 and is shown in
Fig. 13.4. However, most practical measurements are made by using the
refractive index at fixed wavelengths rather than by determining the
complete dispersion curve. Values are most commonly reported as
reciprocal relative dispersion, or v value:
KBr
nD-l
lE
NaCI
ID
TICI
I
10
'u
KCI)
IDo
I
I
I
<='
u
c:
I
I
l~
Vl
.c
KI TlBr
"(
1.70
(13.7)
where nD, n F , and nc refer to the refractive indices measured with sodium
D light, the hydrogen F line, and hydrogen C line (5893 , 4861 , and
6563 -these are indicated in Fig. 13.3a). Typical values of the refractive index vary from 1.0003 for air to the range of 1.3 to 2.7 for solid
oxides. Silicate glasses have refractive indices of about 1.5 to 1.9.
651
~-~--~-~--~--~-~----,
1.65
><
~
1.60
.!':
ID
>
.."
u
ro
Fig. 13.2.
't
ce:
1.55
1.50 -
Vvacuo
Vmu(cl'"ial
(13.5)
to t
Hydrogen F Sodium
Hydrogen
Fig.13.3. (a) Change in refractive index with wavelength for typical glasses in the visible
spectrum.
652
INTRODUCTION TO CERAMICS
4.0
Ge
--------
'"e
0.01
2
<.>
Si
-<
~
~
"tj
3.0
.
<1J
o- 0.001
><
<1J
U
'"
O
TiO~
<1J
.2:
.g
Amorphous selenium
SrTiO~
~:----:=====~A;-:S:-2~S:-I glass
<1J
ct:
AgCl ____
-----------
2.0
MOOI
I~
QI
Wavelength (microns)
13 .4.
F 19.
\-
Fused silica-:--:::::==---==:::::=-----
-JL~i~F~-=======~~s::
NaF -
Incident wave
Wavelerigth imicronsl
lb)
11=-.-
IS
Primary
transmitted wave
(13.8)
5
13 ..
Fg.
653
654
OPTICAL PROPERTIES
INTRODUCTION TO CERAMICS
specular reflection. The fraction of light reflected in this way is given for
normal incidence by Fresnel's formula:
R =
(n _1)2+
(n + 1)2 +
e
e
-'---'-;;----:'-=
(13.9)
'.
Within the optical region of the spectrum (Fig. 13.1) the index of
absorption is much less than the index of refraction; thus Eq. 13.9 reduces
to the useful form
R
= (~~ ~r
(13.10)
or
dI
-=-{3dx
lo
1
T= lo = exp (- (3x)
In - = -{3x
lo
(13.11)
~:/
Refiected
LO
>,
~0.8
eQ)
~ 0.6
u
~
'O 0.4
e
g
~ 0.2
lL.
0LZ:::L:dLLli:1:LL:LLlL~:::lL::~'j2k:LL!1LLLL::J:L:LLL:1L:LL~~
0.2
0.3
0.5
0.6
0.7
0.8
LO
Wavelength (microns)
1.5
2.0
2.5
3.0
Fig. 13.6. Change in reflection, absorption, and transmission of light with wavelength for a
green glass.
(13.12)
(13.13)
655
(13.14)
To=exp(-Ecx)
(13.15)
656
INTRODUCTION TO CERAMICS
OPTICAL PROPERTIES
.l =
I
K 7Tr
A
(13.16)
-1 = exp(-Sx) = exp(-KN7Tr 2 x)
o
(13.17)
v: = i3 7Tr
(13.18)
S=~KVpr-1
(13.19)
L
= exp (- 3KV: 4r
~)
lo
p
(13.20)
R=~
I
(13.21)
where e is the angle to the incident beam. The scattered intensity of the
scattered light is a maximum parallel to the beam and a minimum normal
to the incident beam. The scattering coefficient can be determined by the
integration of the scattered intensity at all angles to the incident beam. In
terms of the scattering normal to the beam, it is given by
657
140
For NaDline (A
= 0.589 micran)
~ 120
.:t.
~'"
:.:: 100
M
11
CI)
d max --~
27T(m-l)
80 _
-E
QJ
'
~ 60o
OD
.~
40
:t::
ro
167T
S = -3- R 90
87T
= TRo.
en
(13.22)
The value of the scattering factor K is mainly dependent on (1) the ratio
of the particle diameter to the wavelength of the incident light, usually
measured in terms of a = 27Tr / A, and (2) the relative refractive index of
the particle and the medium (m = n parlicle/ n medium)' In addition, the amount
20
Fig. 13.7. Effect of particle size on the scattering coefficient (S = 3KVp lr4) of a fixed
volume of particles (1.0 vol%) for a relative refractive index of 1.8 (Ti0 2 in glass).
658
INTRODUCTION TO CERAMICS
OPTICAL PROPERTIES
_"
659
No field
Applied field
~
"
Fig. 13.8.
Shift of electro n c10ud giving rise to dipole moment and electronic polarization.
a= n:-+ 1 Mp =
3Eo
No n
3Eo
No
Eo - is
d3
R
00
QcI = -Ze]
(13.24)
ro
(13.23)
Fig. 13.9.
=-
(Z )2 d
/ro
e 4 1TE od 2
(13.25)
660
INTRODUCTION TO CERAMICS
Table 13.2.
From this,
and
ji
= 41TE:or0
E/Ze
= Zed = 41TE:or03 E
(13.27)
(13.28)
Number of
Eleetrons
(13.26)
661
OPTICAL PROPERTIES
10
Chargc
-1
Ne
Na
2.4
1.0
A
9.0
4.2
0.5
K
2.2
36
Br
Kr
Rb
54
12.6
1
19.0
Xe
18
(13.29)
In the unrationalized esu system of units, 41TE:o equals 1 so that the
electronic polarization is equal to r0 3 That is, for helium,
Cl
7.0
...,
+1
-2
6.3
10.3
3.6
Cs
6.1
+2
Mg
0.3
Ca
1.3
+3
Se
0.9
Sr
2.2
Ba
4.2
La
3.3
(13.30)
This calculation is only an approximation, as indicated previously, and
actually gives a value about five times too small. Its main interest fram
our point of view is that it illustrates the closerelationship between the
atomic volume and atomic polarizability.
The molar refractivity Roo of gases can be determined experimentally by
measuring the refractive index for various wavelengths, as in Fig. 13.3, and
then extrapolating to an infinite wavelength. This procedure, with sorne
modification, is also applicable to ions in solution. However, the value thus
obtained is the sumrnation of the refractivities of the separate ions; to
obtain individual values, we must assume a value of sorne one particular
ion. A reasonable assumption is that the molar refractivity of the H+ is zero,
since this consists of a single proton. The molar refractivities of a number
of ions are collected in Table 13.2, in which they are grouped according to
the total number of orbital electrons. As indicated before, ion size has a
considerable effect, but increasing negative charge for any given number of
orbital electrons also has a substantial effect. This is understandable, since
the outer electrons are less firmly bound in a negative ion than in a positve
one; thus, in addition to size effects, the outer electrons are expected to
contribute the major share to the polarizability.
In general, then, we expect that the ionic polarizability increases with the
sizeof the ion and with the degree of negative charge on isoelectric ions.
Since the index of refraction increases along with the polarizability, as
indicated in Eq. 13.23, we obtain high refractive indices with large ions
(nPbS = 3.912) and low indices with small ions (nSiC 14 = 1.412). However, the
immediatesurroundings and arrangement of ions also.affect the refractive
l
.~
662
OPTICAL PROPERTIES
INTRODUCTION TO CERAMICS
Table 13.3. Refractive Indices of Sorne Glasses and Crystals
Average
Refractive
Index
Glass composition:
, From orthocIase (KAISbOg)
From albite (NaAISi 30 g)
From nepheline syenite
Silica glass, Si0 2
Vycor glass (96% Si0 2)
Soda-lime-silicaglass
Borosilicate (Pyrex) glass
Dense ftint optical glasses
Arsenic trisulfide glass, AS 2S 3
Crystals:
Silicon chloride, SiCl4
Lithium ftuoride, LiF :-8
Sodium ftuoride, NaF ~ ~
Calcium ftuoride, CaF2 /0"
Corundum, Al 20 3
PericIase, MgO
Quartz, Si0 2
Spinel, MgAl 20 4
Zircon, ZiSi0 4
OrthocIase, KAISbOg
Albite, NaAlSi 30 g
Anorthite, CaAl 2Si20 g
Sillimanite, AI 20 3Si0 2
Mullite, 3Ah032Si02
Rutile, Ti0 2
Silicon carbide, SiC
Litharge, PbO
Galena, PbS
Calcite, CaC0 3
Silicon, Si
Cadmium telluride, CdTe
Cadmium sulfide, CdS
Strontium titanate, SrTi0 3
Lithium niobate, LiNb0 3
Yttrium oxide, Y20 3
Zinc selenide, ZnSe
Barium titanate, BaTi0 3
3.0
f
Birefringence
r--r---'---'---r---r---'---r--r--,---'--~-~
2.S
2.6
Diamond -..,.,.
2.4
1.51
1.49
1.50
1.458
1.458
1.51-1.52
1.47
1.6-1.7
2.66
~ 2.2
"tJ
.0=
~u 2.0
E.K.
MgO '\
~
LiI
fluoborate".V
E.K.
srF2
glasses \
y f1uogermanate
E.K.
BaF2
glasses
f1uoride
.
~CsI
glasses
L1F
~
~E.K. f1uosilicate
~ t
NaCl
glasses
Titanium glasses
E.K. h t
Ordinary oplical glasses
II uop hosp a e
glasses
&
f rJ.. f r
1.8
CaF2
1.6
1.0
0.008
0.009
j(
t
1.2
,i"
..,
11I
E.K.
rare element
borate glasses ~
1.4
1.412
1.392
1.326
1.434
1.76
1.74
1.55
1.72
1.95
1.525
1.529
1.585
1.65
1.64
2.71
2.68
2.61
3.912
1.65
3.49
2.74
2.50
2.49
2.31
1.92
2.62
2.40
663
"-
'\'"
L----''-----J_----J_----J_--l._--l._--L_--L_--L_--L_--L_..J
120
100
SO
20
40
60
= ~D: 1~ e
F
Fig. 13.10. Range o optical properties obtained with crystals and ordinary optical glasses
and with Eastman Kodak Company f1uoride and rare earth glasses.
0.055
0.007
0.008
0.008
0.021
0.010
0.287
0.043
oscillators in the ultraviolet. There is strong interaction with electromagnetic radiation of the natural frequency causing resonance, or reinforcement
of the natural oscillations, and a high absorption at this resonant frequency
(compare with Chapter 18). At frequencies far from the resonant frequency
for a single electron,
2
0.17
2 _
~
1 + Ne j7fm
2
Vo -
(13.31)
where N is the number of atoms per unit volume, e is the electronic charge,
m is the electronic mass, Vo is the natural frequency, and v is the frequency
of the incident radiation. In general, there is a sum of terms of the form of
Eq. 13.31, for solids the interaction between adjacent ions must also be
considered, but the same general shape of the dispersion characteristic
results (Fig. 13.11). The index increases with decreasing wavelength in the
visible range, and this is referred to as normal dispersion. One of the
-:/
}
664
INTRODUCTION TO CERAMICS
OPTICAL PROPERTIES
x
u
'"
.!':
'">
:.J
'"
o::
Visible speclrum
Frequency~
--o- Wavelenglh
Fig. 13.11.
n = A + A 2 + A4
665
(13.32)
It can easily be shown that Eq. 13.31 leads to this result if v is much less
Incident beam
~han vo. In the region of the natural frequency where resonance occurs the
mdex decrea.ses with decreasing wavelength, and tbis is referred t~ as
Incidenl beam
anomalous dIspersion.
13.3
Fig. 13.12.
II
l
....
!,
rf
Fig. 13.13.
666
INTRODUCTION TO CERAMICS
reflected image, that is, to the narrowness of the specular reflection band
and its intensity.* These factors are primarily determined by the index of
refraction and by the surface smoothness. In order to obtain a high surface
gloss, it is desirable to use alead-base glaze or enamel composition fired to
a temperature at which it flows out to form a completely smooth surface.
The surface gloss can be decreased by using a lower-index glass phase or
by creating surface roughness. Surface roughness can be produced by
grinding or sand blasting, by chemical etching an initially smooth surface,
and by the deposition of particulate material from a suspension, solution,
or vapor phase. Difficulties in obtaining high gloss with glazes and enamels
usually result from surface roughness caused by crystal formation, a wavy
surface, or craters created by bursting bubbles.
13.4
OPTICAL PROPERTIES
667
Incident beam
Diffuse
reflection
(a)
Incident beam
transmission
Specular
transmission
(b)
Fig.13.14. Speeular and diffuse refiection and transmissi?n from (a) surface coating of gIaze
or enamel and (b) plate of translucent gIass or porcelam.
.tir... _
668
INTRODUCTION TO CERAMICS
O'
/" ~ ~100
la' 20'
-l-..--..<
O'
30'
~ ~
"z. v 40'
Too
OPTICAL PROPERTIES
ID'
',< 50'
\
20'
-l-.. -J...
30'
"z.. '<40'
,
60'
-<
'-- 70'
100
O'
lO'
---1
100
(b)
O'
20'
~ ~100
1--. 3D'
"- 40'
v
/~.('I;"'",
J '"
lO'
---1.
20'
--J
10"
rW
",
\: 60'
\
\- 70'
\
/W~/"I
~---:l'----'lLO--}--1 90'
00
50'
y
' 70'
\
30'
'- "40'
'" 50'
" 60'
'\
/W~I~"1",
100 90 '
10
(a)
Incrt lldditions
SnOz
ZrSi0 4
ZrOz
ZnS
TiO z (anatase)
TiO; (rutile)
Incrt proclucts of rcactions
Air Pares
As Z0 6
PbAsz0 6
Ca 4Sb 4 0 1a F 2
N ucleatecl ancl crystallizecl
NaF
CaFz
CaTiSi06
ZrOz
CaTiO a
TiO z (anatase)
TiOz (rutile)
lao'
-~~~-----:c::--"-':-'-90'
10
10
no
ncrY8tnl/nl;11IB8
\.-- 60'
Opacificrs
50'
\- 70'
\
- ao'
669
rW
I 90'
100
~
~
F!g. 13.15, ~olar reflectance diagrams for four glazes. (a) High-gloss black glaze; (b)
hlgh-gloss ChIna g,laze; (e) medium-low-gloss sanitary ware glaze; (d) low-gloss semimat
glaze. From A. DInsdale and F. Malkin, Trans. Brit. Ceram. Soe., 54, 94 (1955).
2.0
2.0
2.2
2.4
2.52
2.76
on melting
1.0
2.2
2.2
2.2
from the glass
1.3
1.4
1.9
2.2
2.35
2.52
2.76
1.33
1.33
1.47
1.6
1.68
1.84
0.67
1.47
1.47
1 .47
0.87
0.93
1 .27
1.47
1.57
1.68
1.84
R' -
R~)]
(13.33)
670
OPTICAL PROPERTIES
INTRODUCTION TO CERAMICS
671
0.95
~
0.90
(13.34)
0.85
,
That is, the reflectance of a thick coating is getermined equally as much by
the absorption coefficient as by the scattering characteristics.
The covering power of an opaque coating is related to the fraction of Iight
reflected from adjacent areas in the underlying material, one area having a
high backing reflectance R' and the other a low backing reflectance. This is
measured in terms of a contrast ratio 01' opacifying power CR' = R o/ RR'. It is
convenient to take R' = 0.80, so that C o.so = Ro/R o.so , that is, the ratio of
reflectance with a completely absorbing backing and the reflectance with a
fairly good reflectance backing. This ratio can be related to the reflectance
of a specimen having R' = O from Eq. 13.33. This equation is graphically
represented for any value of the reflectivity by the family of curves in Fig.
13.16. For a specific contrast ratio Roo, scattering coefficient, coating
thickness, and value of Ro, the opacity 01' contrast ratio can be determined.
Oood opacification is obtained with high values of reflectivity, thick
coating, and high values of the scattering coefficient 01' some combination
of these.
The particular combination of opacifiers used depends on the system
being opacified and on the method of fabrication. For sheet-steel porcelain
enamels a thin coating applied by spraying 01' brushing is desired. The
reflectance of the base is low. For good covering power with a low value of
the backing reflectance in thin layers, the highest possible value of the
scattering coefficient must be obtained. For this purpose titania-opacified
enamels, in which the relative refractive index is high and particle sizes
equal to the wavelength of light can be obtained by nucleation and
precipitation, are preferred. In contrast, cast-iron enamels are applied on
the heavy metal sections by a dry process in which the coating is put 00 the
hot ~etal as a powder. This technique and the roughness of the casting
reqUlre that a heavy coat of enamel be used. Coating thicknesses are on the
?rder of 0.070 in. compared with a value of 0.007 in. for sheet steel, an
mcrease of a factor of 10. ConsequentIy, a lower opacifying power can be
satisfactorily used on cast iron than for sheet steel applications, and a more
economical opacifier than titania is indicated. (Also, the long cooling cycle
which varies with the casting thickness makes control of a nucleation
process very difficult.) Antimony base opacifiers have been found satisfactory.
0.80
0.75
o
>t:
oi
2u 0.70
a.>
::
a.>
0:0
0.65
0.60
I'~
~.
0.50
0.45 L_.-L::",,::-l---L--L---L---:-=---=-=::----:'
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.0
Opacity, Ca.SO
Fig. 13.16.
"
672
INTRODUCTION TO CERAMICS
'1""""4
[ ......
......-l
00 C"l C'1? M
~~ci6<~~
<O
......
~~
b'n:Z.
E-<
ZE-<
~~~
...... 1:-
C'l000'
00
O' O
............
11
ZE-<
1I
......
Z..o
00
alo
........C'l<oanan
....
C<;>C<;>
'<1'
g......
'<1''''''' OOC'l
<:3
11
re
'<1' .
......
11
O
::
ro
111
60
...
",9
ti
~
~
'"
~~u::~
40
Cf:I""""f10M
VI
t- ......
:E
e:
~ee
biJN
~~
C'l
......
00 C'l
i:5
C'l 1:-
20
O'
al~
Z
......
~~
fx.<
oO
20
40
60
80
100
120
140
I:-MI:-an'<l'
160
~or.i~e-:i<
Fig. 13.17.
::l
fx.<
80
e'"
11
100
II
~O
01._
'<1'0
<oC'l
1:-
Rclation between diffuse reftectance and thickness for three different coatings.
c::
.~
m._
m m
al O
S
O
673
/
'"
1:- tI:- 00
11
U3
674
100 .-----;-;o;;;"o-r----:T--r-T-----
INTRODUCTION TO CERAMICS
different rom that o the matrix is the most satisactory; sodium and
caIcium fluoride are very commonly used, as indicated in Table 13.5.
FrequentIy the translucency o single-phase oxide ceramics is cited as an
indication o their overaIl quality. This index o quality works reasonably
weIl because the pore size is similar in different bodies and the translucency
depends almost excIusively on the pore concentration. (Strength and'other
properties are cIosely related to the porosity.) In aluminum oxide, or
example, the index o reraction o the solid is relatively high (nD = 1.8),
whereas the index o reraction o the pore phase is near unity, giving a
relative index o 1.8, which is very high. The pore size or these bodies
usuaIly corresponds to the original particIe size o the starting material
(requentIy 0.5 tQ 2 microns) and is nearIy the wavelength o the incident
radiation so tht the scattering is a maximum. ConsequentIy, as indicated in
Fig. 13.18, the transmission is ound to be reduced to 0.01 % by the addition
o about3% porosity. Even when the porosity is reduced to a value o 0.3%,
the transmission is stiII only about 10% that o a completely dense sample.
That is, or high-density single-phase ceramics containingfine porosity the
translucency is a sensitive measure o the residual porosity and consequently a good indication o the quality o the ware.
The aesthetic value o many porcelain compositions is judged by the
translucency.
This together with good mechanical properties is the basis
,
or compositions such as bone china and hard porcelain having high
translucency. For porcelain bodies the phases present are normaIly a glass
.., having an index o reraction o approximately 1.5, muIlite (nD = 1.64), and
quartz (nD = 1.55). As discussed in Chapter 11, in the normal microstructure o dense vitrified porcelain the muIlite phase appears as fine needle
crystals in a glassy matrix with larger quartz crystals which are undissolved
or partiaIly dissolved (see Fig. 11.11). Consequently, although the particIe
size o the muIlite is in the micron range, the particIe size o the quartzis
much larger. Both because o the difference in particIe size and becauseo
the greater difference in the index o reraction, the muIlite phase is the
main contributor to scattering and decreased translucency in porcelain
bodies. The primary method by which the translucency can be increased is
to increase the glass content, decreasing the amount o mullite present.
This can be accomplished, or example, by increasing the ratio o eldspar
to c1ay, as discussed in Chapters 7 and 11. Frit porcelains and compositions, such as dental porcelains having a high eldspar content, are given
high translucency by increasing the amount o glass at the expense o
muIlite development. For other purposes, however, this is deleterious,
since it lowers the strength which the presence o muIlite adds to the body.
In the same way that porosity greatIy decreases the translucency o
single-phase alumina, the presence o voids (nD = 1) is deIeterious in
~
"o
:@
75
i.i
.=
c:
o
'Vi
.~
50
0.04
'"c:ro
.=
25
0.01
0.03
0.02
80-
~ 70 f-
1/
/1
c:
ro
~ 60-
'"c:
50f-
/1
Q)
.=ro
1/
1
1 1
1
40 L_L----:::-~-'------::;*----;~;"
3.955
3.965
3.975
3.985
Density (g/cm 3 )
(b)
Fig 13 18
675
676
INTRODUCTION TO CERAMICS
OPTICAL PROPERTIES
porcelain bodies: Translucent bodies are only obtained when the ware is
?red t? a sufficIent temperature for the fine pores resulting from the
~nterstIces bet~:en cl.ay particles to be completely eliminated. This occurs
m ware contam~ng hIgh feldspar or frit content which develops a large
glass.y ph~se or m ware fired to a sufficientIy high temperature so that the
densIficatIOn process ca? go to completion. Typically, in high-fired
transl~cent wa~e, the resId.u~1 ~orosity is limited to pores of large size
result~ng from mhomogeneItIes m the mixing process. Even these pores
contn.but~ substantial~y to decrease the translucency; as much as 5%
porosity IS found eqUIvalent to 50% mullite.
Anothe~ way of achieving a highly translucent body is to adjust the index
of r~fractIon ?f the various phases present so that a better match is
obta~ned than IS normally found. For a typical body in which quartz and
mulhte. are bot~ p~esent this is not possible because the quartz and mullite
hav~ dff~ren.t mdIces of refraction. The mullite which is present in a fine
partI.cle SIZ~ IS the phase which the glass should be closest to in' order to
~btam ~axImum tr~nslucency (minimum scattering). In practical compositIO~S thIS approach !S best realized in English bone china having liquid with
an I~dex of refractIon of about 1.56, which brings it into a region nearly
eqUIv~lent .to the c~ystal phases present. This, together with its low
POroSIty, ~Ives Enghsh bo.ne chi~a its exceptionalIy good translucency.
!he effectIveness of. changmg the mdex of refraction of the liquid phase is
IlIustrated for a senes of tests compositions in Fig. 13.19.
50 , - - - - - - , - - - r - - , - - - - - ,
::: 40 ID
Quartz
e
-'"
.~
Mullite
:S 30 E
E
o
.;;
.'!!
20
~1O
r:'
f-
1.65
1.70
~ig.. 13.I~. Elfect of changing liquid index on translucency of 20% quartz, 20% mullite, 60%
hqUld mIxture. From G. Goodman, J. Am. Ceram. Soc., .33, 66 (1950).
677
678
INTRODUCTION TO CERAMICS
OPTICAL PROPERTIES
I
{
,.
"
Ir
679
680
INTRODUCTION TO CERAMICS
z
OPTICAL PROPERTIES
681
t
fin
~
d yz
0Jl
.~
e:
_1
al spheneal
symmetry
StabillzatlOn due to lome attraetlOn
Isolated metal
Ti: '+ ion
dz! d X I _ y
I~infi~
';;;-;;;-;;d
of spherieal
symmetry
d x 2_
Fig. 13.20.
= Dq(teO
}_.:_:_:_::_::_:_--t-I=_x_.:d_",,_d_.,,}}::: :::::.
t
y
-xy
d d" d ,
. 13 .21 .
Flg.
field.
~Dq(oetl
\Ld"dx'_y'
Crystal field energy relationships for Ti3+ ion in an octahedral and tetrahedral
y2
If the Ti3+ ion is surrounded by four negative ions arranged at the corners
of a tetrahedron (a tetrahedral field), the electronic energy in the dZ 2 and
d X 2_ y 2 orbitals is less than that in the d xy, dyz and d xz orbitals, and the
magnitude of the splitting in this case is smaller than in the octahedral field.
These splittings are illustrated.schematically in Fig. 13.21.
The total energy difference between the higher and lower energy levels is
denoted by IODq. For d orbitals, this is generally in the range of 1 to 2 eVo
Hence absorption of light, associated with electronic transitions between
the lower and upper d levels, generally occurs in the visible or nearinfrared
regions of the spectrum. Such absorption is used, in fact, to determine
values for the energy splitting IODq.
For transition metal ions with more than a single d electron, two factors
nust be considered in assessing the distribution of the d electrons among
:he available orbitals. These are the tendency toward a maximum number
)f parallel spins and the preference for orbitals of lower energy in the
igand field. In many cases, these infiuences are in confiict with each other
e.g., for ions having 4 to 7 d electrons placed in an octahedral field). In
iUch cases, the state having the maximum number of parallel spins is
Jreferred when the IODq splitting is small relative to the interaction
;ausing paraIlel spins; the state having the maximum number of electrons
683
OPTICAL PROPERTIES
INTRODUCTION TO CERAMICS
682
Table 13.6.
Number of
d electrons
1
2
3
4
5
6
7
8
9
10
Ion
Til+
Vl+
V2+
Cr+
Cr2 +
Mn3+
Mn 2 +
Fe3+
Fe2+
Col+
Co2+
Ni 2 +
Cu 2+
2n 2 +
Octahedron
10 Dq/cm
Tetrahedron
10 Dq/cm
20,300
18,000
11,800
17,600
14,000
21,000
7500
14,000
10,000
18,100
10,000
8600
13,000
O
9000
8400
5200
7800
6200
9300
3300
6200
4400
7800
4400
3800
5800
O
Oxide
Octahedron
10 Dq/cm
6000
1
1j.
5r-----,------,r------,---r---..,--------,
16,800
'Eu 4
7300-9800
12,200
9520
Q)
Cu in Pb glass (green)
Q)
eL
1: 3
t>O
.
8600
Q)
1 eV
~ 2
Q)
e
o
:g
e
of this kind are usuaIly semiconductors and are always deepiy colored
(Fe 304, black; Fe Z03, red; TlCldTlCl, red; Au zC1 4, dark red; TbOs, dark
blue).
To be used in ceramics, stability at elevated temperatures is required,
and this limits the palette of available colors. As the temperature level is
increased, the number of stable colors diminishes so that underglaze
colors forhigh-temperature porcelains (1400 to SOOC) are limited and
marking colors for 1800C are not available; overglaze colors and colors
for low-temperature glazes and enamels are numerous. Colors in glazes
and enamels are normally formed either by solution of ions in the glass
phase or bydispersion of solid colored particles in the same way as
colored particles are dispersed in paints.
The colors of ions in silicate glasses depend primarily on the oxidation
state and coordination number. Coordination number corresponds to
being in a network former or network modifier position. For example, in
normal silicate glasses Cu z+ replaces Na+ in a modifier position and is
surrounded by six or more oxygen ions; Fe 3 + and Co z+ usuaIly replace
Si4+, forming Co0 4 and Fe04 groups in the network. However, as the
basicity of a host glass changes, there is a change in the function of these
o L_----l_ _~:==:::::::::~:....--~~~;-------:;;,
400
450
550
650
700
Wavelenglh (m}.L)
Fig. 13.22.
---T----684
INTRODUCTION TO CERAMICS
OPTICAL PROPERTIES
685
The adaptability of the eye to color distribution also means that apure
color may not be the most satisfactory one. For example, we are.
accustomed to a reddish tinge in incident Iight; this is particularIy true
when artificial light is used for viewing. Consequently, a white porcelain
with transmission completely independent of wavelength is described as
bluish by a typical observer; a sample having increased transmission in
OPTICAL PROPERTIES
INTRODUCTION TO CERAMICS
686
687
2.5 r - - - - , - - - - - , - - - - . , - - - - , - - - - , - - - - r - - - - ,
,.
1.0
Q)
2.0
'"e
o
c.
'"~
~ 0.5
6;)1.5
ro
a:::
Carbon are
Q)
Q)
>
:;::;
ro
1.0
50-watt
600
incandeseent
lamp
700
A (nm)
Fig. 13.23. Color's sensilivilY of typical observer under dark-adapted (curve A) and
lighl-adapled (curve B) condilions.
the red part of the spectrum, which gives it an off-white color from a
p\lysical point of view, is, on comparison, described by an observer as a
whiter color.
In addition to the eye's sensitivity and bias, color depends to a great
extent on the light source in which it is viewed. Shadows on snow are blue
because the incident light from the sky is that color. Similarly, we
commonly find that colors appear quite different under daylight, incandescent light, and fluorescent light. The widespread nature of this phenomenon is perhaps less well recognized. As an example, light entering a room
diffused from a large tree is mostly green, whereas sunlight reflected to
surroundings in a room with a red-carpeted area is mostly red. Colored
objects viewed under these two situations may appear quite different.
This causes difficulty in color matching, since colors appearing the same
under standard conditions or under a particular light source may not
match at all when viewed in sorne other surroundings. The spectral
distribution of sorne common light sources is shown in Fig. 13.24.
In view of these variables it is obvious that the specification of color in
meaningful terms such as red or green or blue and the shades of
differences among them is not easy. A variety of systems has been
proposed. In general there are three fundamental variables of color as
mental phenomenon. The most important for most purposes is hue, whic.h
may be described as the main quality factor in color. It is the essential
0.5
O l---...:=-.L---..I------L---L--~0:-----L---=700
400
500
60
Wavelength (mil)
Fig.13.24.
e:*
688
arl-
tt
INTRODUCTION TO CERAMICS
ness vares vertcally, hue vares wth positfon about the center in a
horizontal plane, and saturation varies with the distance outward normal
to the center vertical. This color cylinder is illustrated in Fig. 13.25 and
provides the basis for the arrangement of color chips in the Muncel color
system.
9'7
MH ritMen
OPTICAL PROPERTIES
q'
'Me
to$' ,
689
Fig. 13.25. Diagram of color cylinder. Brightness varies along axis, hue along circurnference,
and saturation along radius.
690
INTRODUCTION TO CERAMICS
e'"
<l)
E
E
u
o
t
e
!"
::::l
'
(ij
691
693
OPTICAL PROPERTIES
o
Spontaneous decay
Excitation
Spontaneous
and stimulated
emission
(a)
Spontaneous decay
o
Spontaneous and
stimulated emission
Excitation
Spontaneous decay
_-L--l----l---------JL---
CD
(b)
Fig.13.26. S
system.
694
695
INTRODUCTION TO CERAMICS
OPTICAL PROPERTIES
ft:.
"
sin
rCrl
=-,'
(13.35)
For a typical glass with n = 1.50" the critical angle is about 42.
Because of total internal reflection, a glass rod can transmit light around
corners. An image incident on one end of the rod, however, is seen at the
other end as an area of approximately uniform intensity, representing the
average of the intensities incident on the initial end. If the single rod is
replaced by a bundle of smaller fibers, each fiber transmits only the light
incident 00 it, and an image can be transmitted with a resolutioo equal to
the individual fiber diameters.
Despite this potential for transmitting images, fiber optic devices were
limited for many years by problems of light loss. Among the sources of loss
...
696
INTRODUCTION TO CERAMICS
......
~_~-,_~
......._t**_tj+_$tH
697
OPTICAL PROPERTIES
Modulator
Laser source
Transmission line
I
I
Detector
18
10 5 photon/pulse
Transmission line
10-.1 or 40 dB
1055
Fig. 13.27. Schernatic diagrarn of a laser cornrnunications systern. Frorn E. Snitzer, Bull.
Am. Ceram. Soc., 52, 516 (1973).
niques for modulation have all been the sub)ect of cons!d~rable technical
attention. Since lasers cannot be used for dlrect transmlSSlOn through the
atmosphere, because of high attenuation in rain, fog, or snow, mu~h
activity has also been directed to transmission lines based on fiber opbc
technology.
. .
.
In discussing fiber optic wave guides for commumcabons, reference IS
often made to single-mode and multimode fibers. Her~ the ter.m mo.de
describes the possible discrete distributions of electnc field mtenslt,Y
across the aperture of the fiber which can pr?~agate. Eac~ mode IS
characterized by specific phase and group veloclbes. ConventlOnal fiber
optic configurations, with a step change in index of.refrattion ?etween core
and c!adding, have core diameters (lO to 100 mlcrons) whlch are large
enough to support many modes. With such multimode fib~rs, the rate of
transmitting information would be limited by the spreadmg of a pulse
because of differences in the velocity of propagation in the different ~od~s.
For single-mode operation, core diameters in the range of ~ few.mlcrons
are required. Since most fiber handling requires outer (c1addmg) dIameters
in the range of at least 100 microns, single-mode fibers would have
c1adding-core-diameter ratios in the range of 20 or 30 to 1; such. ~bers
represent a most critical test of fabrication techniques and the ablhty to
control formo
With an optical communication system, it is anticipated that repeater
699
OPTICAL PROPERTIES
698
INTRODUCTION TO CERAMICS
800
500
F'
13 28
1000
1300
1500
1700
Wavelenglh (nm)
p~~ks ~a~ be associated with absorption due to OH- ions. From R. D. Maurer, Proc. IEEE,
61,452 (1973).
'1
v -
2 _
Vo
2ve(Ko + 2)E
3mv,,2
(13.36)
700
INTRODUCTION TO CERAMICS
The index of refraction n varies as [v Z- voZr\ and hence Eg. 13.36 directly
expresses the linear variation of the index with electric field.
The effect of an applied electric field may also be represented in terms of
the polarizability. In the derivation of Eq. 13.28, it was assumed that the
dipole strength JL Was a linear function of the applied field, JL = aE, and for
N. dipoles the polarization is P = NJL = NaE. Por crystals which lack a
center of symmetry, the polarization is not a linear function of the electrical
field. Rather
(13.37)
where a' = Na and (J' and y' are material constants associated with the
nonlinear terms.
r = A; [n,(E) -
OPTlCAL PROPERTIES
701
~~~:~:~~~U~:~~f~:'~~~;h~i:~~~~~~:~:i~f~J!f~~~~::::~~i:~\::
Suggested Reading
nlE)]
(13.38)
where 11. 0 is the wavelength of the light in vacuum and n(E) and nlE) are
the field-dependent in dices of refraction. The form taken by n,(E) - nz(E)
depends on the crystal symmetry and on the direction of application of the
electric field as well as the propagation and polarization directions of the
optical beam.
Among the important electrooptic materials are LiNb0 ; LiTaO},
3
z
Ca Nb z0 7 , Sr, Ba l _, Nb z0 6 , KH zP0 4 , K(Tax Nb _x )03' and BaNaNbsO,s. In
many of these crystals, the basic structural' unit is a Nbor Ta ion
coordinated by an octahedron of oxygen ions. Because of the change in the
refractive index with electric field, electrooptic crystals can be used in a
variety of electronic applications such as optical oscillators, frequency
doublers, voltage-controBed switch es in laser cavities, and modulators for
optical communications systems.
In addition to applied electric fields, changes in the index of refraction of
crystals can also be induced by strain (the so-caBed acoustooptic effect).
The strain acts to alter the internal potential of the lattice, and this changes
the shape and size of the orbitals of the weakly bound electrons and hence
caUSes changes in the polarizability and refractive indexo The effect of
strain on the refractive indices of a crystal depends on the direction of the
strain axes and the direction of the optical polarization with respect to the
crystal axes.
. JII, O
Publishing
F. S. Sears, Principies of PhYSICS,
ptlCS, Add'son-Wesley
I
1. Company, lnc., Reading, Mass., 1946.
.
W'I & Sons
,
2. H. C. van de Hulst, Light Scattering by Small Partlcles, John 1 ey
lnc New York, 1957.
N Y k
3. R. ~. Evans, An Introduction to Color, John Wiley & Sons, lnc., ew or,
4.
WI9~8~.
England, 1951.
O 'fi d " Ceram
5. W. W . Coff een, "How Enamels , Glasses and Glazes are pacI e ,
.
Ind 70 120 (April, 1958); 77 (May, 1958).
I .
G .,G ,d an "Relation o Microstructure to Trans Iucenc Y o Parce am
6.
. 00 m ,
6 (1950)
.'
B d' "1 A n Ceram Soco 33, 6 .
.
948
o les, . 1" C
'. GI~zes Industrial Publications, Chlcago, 1 .
7. C. W. Parme ee, eramlC,
W. &Sons lnc
,.,
8. D. B. Judd, Color in Business, Science, and Industry, John ley
New York, 1952.
.
2d d Methuen
9. L. E. Orgel, An Introduction to Transition -Metal Chemlstry, e.,
,
& Ca., Ud., London, 1966.
.
S
lnc New
10. B. A. Lengyel, Introduction to Laser Physics, John Wlley & ons,
.,
1966. an d D . W . Jon,
es Eds ., Modern Oxide Materials, Academic
11. York,
B. Cockayne
Press, lnc., New York, 1972.
."
Acta 9 205
Crystals and Polarizing Matenals, Opto
"
12. A. Sma kula , "Synthetic
,
(1962).
OPTlCAL PROPERTlES
13.
13.9.
E. Snitzer, "Lasers and Glass Technology," Bull. Am. Ceram. Sac., 52, 516
(1973).
14.
R. D. Maurer, "Glass Fibers for Optical Cornrnunication," Prac. IEEE, 61, 452
(1973).
(1969).
17. D. Marcuse, Ed., Integrated Optics, IEEE Press, New York, 1973.
"
Problems
13.1. Windows for CO, lasers (10.6 microns) and CO lasers (5 microns) require low
absorption yet high strength and ease of fabrication. Contrast the properties and
requirements of oxides and halides.
13.2. Forthefollowingcompounds,decide whether (a) n' p K,(b) Il' = K,or (e) Il' "" K:
MgAl,O.
SiC
CsC}
SiO, (fused)
13.3
703
INTRODUCTION TO CERAMICS
702
InP
GaAs
CdS
Na,O-CaOSiO, (glass)
Ge
ZrO,
UO,
AI,O,
FeO
NiO
Determine for MgO the polarizability and polarizability per mole at 10 kHz and the
molar refraction for light at A = 0.590 micron. Compare these values and comment.
What would the dilference be if the complex permittivity were used?
13.4 Infrared-transmitting optics are becoming of great importance. Arsenic trisulfide
glasses are suitable for this purpose. In terms of their absorption characteristics.
explain why silicate glasses are not used. What common impurities might you expect to
be harmful in As,S,? Why?
13.5 What differences in index of refraction and dispersion would you expect between LiF
and PbS? List reasons for your answer.
13.6 In the production of porcelain it is desirable to have a high degree of translucency,
which is frequentIy not achieved. How would you define translucency as a measurable
characteristic? Discuss the factors which contribute to translucency in porcelains. and
explain techniques used in (a) composition selection, (b) fabrication methods. and (e)
firing procedures which would enhance the translucency.
13.7. Which material transmits infrared radiation of the longest wavelength: MgO, SrO, or
BaO?
13.8. Titania is extensively used to opacify porcelain enamels. What are the light-scattering
particles? What particle characteristics give these enamels a high opacifying quality?
Explain the relative and absolute importance of refractive index, particle size, crystal
structure, color, transparency, etc. Explain how the light-scattering particles are
formed in the enamel.
Zinc sulfide is an important phosphor with a band gap of 3.64 ~V for.:he cubic (zinc
blende) structure. U nder proper excitation zinc blende doped .wlth C~ (O.O! ato m:"')
.
d' t' of 6700 i When zinc vacancies are produced In the ZInC bIende l~ttIce
emlts ra la IOn
fOl.
.,
d 4400 A ( )
ti' n of Cl- 'ons,
the radiation
emItted IS centered aroun
. .a
.
.
b y the Incorpora o
Com ute he longest wavelength capable of producing ftuorescen.ce on ~he assum.ptln
that ~xcitation is independent of impurity levels. (b) Lo.cate the I~punty levels In the
band gap in relation to the valence band (illustrate wlth a drawIng).
14
Plastic Deformation,
Viscous Flow,
and Creep
705
25,000
2500
20,000
2000
.;
o-
~ 15,000
~
ii5
10,000
1000
5,000
500
O o1L.--~---=-0.-!-01:-:0:---;;-0.-;;0:-;15:---;~;:;--~0;:;;::.025
Deflection (in.)
14.1
Introduction
14 .1. Stress-strain curves for crystaIs of KBr and Mg'O tested in bending.
From A.
F 19.
5 )
E.
Gorum, E. R. Parker, and J. A. Pask, J. Am. Ceram. Soc., 41, 161 (19 8.
.Q.tbeL material are the elastic JTlo-!:!lus E, the yield st~~~~.~X,. and
~he
-.
....
"
_-
*Units of stress include meganewton/m = 1450 psi = 101 Kg/cm2 = 1.01 kg/mm 2 = lO' bar.
2
706
INTRODUCTION TO CERAMICS
\' The term yield point has been used with various more or less distincl
meanings. It is best reserved for deformation in which the stress drops ofl
/mmediately after deformation is initiated, giving a definite maximum (Fig
\ 14.2), called the upper yield point; the following lower value required fOI
continued deformation is the lower yield point. This kind of deformation i~
commonly observed for low-carbon steels; it is found in sorne samples 01
lithium fluoride and also for aluminum oxide and magnesium oxide at higt
temperatures.
Creep Deformation. ~~.ellme!lsurements.Ctr.e. made at constant stres~
oVC;;LaILe)(tended time period at elevated temperatures, a technical eree
-curve is observed, corresponding tocontinuing<:ieformation with time (Fig
14.3). After-i-;:;ii elasti~' extension thereisa period during which th(
deformation rate de'reases (primary creep or transient creep); this i:
follow~y -; stlO'~t()r long period of a minimum orconstant rate of cree]
(steadY..::~~~ic;-.ree:>=orsecondarycreep); finally there is frequentIy a periol
when deformation rate increases because of impendingfracture (accelerat
Tng.creep..octertiary_cfee'p).
. _.
- ~The shape of cre e lLcuLv.e5.(Eig.. 14.3LY-aries,.depending _onparticula
conditions of test anQ.Jh~}l1aterialte~t~.d.Jr~.e_Tl.t.ly_theinitial
part of tht
curve can be represented by an expression
0.7 r - - - , - - - - , - - - - , - - - - ,
== (constant)O'''.
(14.1
0.6
0.5
0.4
~oweryield
Q)
E
o
E
~
Tertiary
creep
'"Io
0,3
.-1
uc:
x 6
Q)
ca
70
0.2
0.1
Elastic extension
0.001
0.002
0.003
0.004
Deflection (in.)
Fig. 14.2. Stress-strain curve for crystal of LiF ilIustrating yield point. From J. J. Gilman and
W. G. Johnston, reference 6.
OL-_J.-_..l-_~_---L_--'_----::"
100
200
300
Time (hr)
WO
708
INTRODUCTION TO CERAMICS
709
,..., + 0.02
~
QJ
tlD
ro
-5 - 0.02
oC
no
-0.04
QJ
~ - 0.06
'l
Fig. 14.5.
rate.
L - -..1.-
200
Temperalure
Deormation o sample with fixed load and temperature increasing at a constant
Fig. 14.4.
(14.3)
= (constant) a n
(14.2)
where n varies between 2 and 20, with a value of 4 being most commonly
observed.
.The strong temperature dependence of the constant-stress deformation
rate has led to the development of \:'_i"ioysIefractory load tests. In these
measurements a fixed load is._.2PJie,d,.fl<:Lihe__ saIllpletemperatJJee-is
in~r_~~_~~,d_il_t1.~onstantrate,.The res!1J!.i~g<i~i()DIlationis a complex sum of
thermal expansion and creeP()fa sample which usually contains ~o~~id~';~
bletemperature gradients; the overall result is similar to that shownin'Pfg.
14.5. Either a fixed deformation (oiten 10%) or rate of deformation (oiten
pe~ 10 temper~.t~r~-\~se) is taken as an end-point temperature,
mdlcatmg the load-bdring capacity. Although these tests do not discriminate between deformation mechanisms, ~h_eY.JI1-dj~~I1__~~9.gIiiil;e
way the difference in load~bearingcapacity betweensamples.ofthe same
material and between different materials.
= dvldx
!%.
(14.4)
710
INTRODUCTION TO CERAMICS
where 7 is the force exerted on a unit area of aplane parallel to the direction
of flow and dv {dx is the normal velocity gradient. The viscosity coefficient
71 has units of shear stress per velocity gradient (g{cm-sec, or poise, p); the
reciprocal of viscosity is caBed the fluidity (4) = 1/71). Sometimes it is
convenient to discuss fluid-flow properties in terms of the ratio of viscosity
to density; this is caBed the kinematic viscosity (v =r{p cm 2 {sec).
The viscosity varies over wide limits. For water at room temperature and
for liquid metals the value is of the order of 0.01 P (l cP). For soda-limesilica glasses at the liquidus temperature the value is about 1000 P; in the
annealing range the viscosity of glasses is about 10 14 P.
At the lower temperatures the deformation curve for a glass sample with
a fixed load is similar to the creep curve shown in Fig. 14.3. It is
distinguished from plastic flow in that the rate of deformation during the
constant-rate period shown in Fig. 14.3 is directly proportional to the
applied stress; this is generally not true for plastic deformation and creep of
complex materials.
14.2 Plastic Deformation of Rock Salt Structure Crystals
The first studies of crystal plasticity were those of E. 'Reusch,* who
discovered and investigated the plastic deformation of sodium chloride.
The plastic deformation of sodium chloride and other alkali halide crystals
was extensively studied during the 1930s. t These studies and the investigationof oxide crystals, particularly MgO, have been renewed and intensified
under the stimulus of developments in the theory of dislocations.
It is clear, as has already been discussed in Chapter 4, th?t the plastic
deformation of crystals takes place by the movement of dislocations
through the crystal structure. (Disloationshavebee;:;-discussedTn Secti<>n
4JO and are illustrated in Figs. 4.14 to 4.24.LThe impOttancej)t<iiffusion in
thegu~!.o_~~?~es_is._dis<:lJs_s~~i~ .. ~c!i~I1 __1..4.?-=- CrY~~Jl.?g~~pbj_~liY-the
deformation process consists of crystal elements glidd1'g" ayer one another
(called slip) or being homogeneouslysheared (called twin'ning). These
processes are illustrated in Fig. 14.7. The slip mechanism is simpler and is
of very widespread importance; we restrict our discussion almost completely to this process. Macroscopically it is observed that slip tends to take
place discontinuously in bands such as those shown in Fig. 14.7. In
addition, the slip direction and usually the plane of slip have a definite
crystallographic orientation. The stress required for plastic deformation of
*Pogg. Ann., 132,441 (1867).
tSee, for example, E. Schmidt and W. Boas, Plasticity of Crystals, Chapman & Hall, Ltd.,
London, 1968 (originally published 1935).
711
Crystal__~_
axis
}-~---;J
t
Twinning
Slip
la)
I
I
I~
L
\
I
I
>
O
~
),
\
\
__
J~:ion
Plane of
reflection
Twinned
O \
9\
Twinning
Slip
(b)
147
.. Schematic representation of
F Ig.
twinning.
(a)
macroscopic and
(h)
F
A cos ~c~~__~"-_
(14.5)
The particl!JtPlanes and dire.ctigns in which slip takes place are dictated
tri
712
Ir
INTRODUCTION TO CERAMICS
~,
M'
rC:':f'tt'
713
Fig. 14.9. (a) Deformation markings on surface of bent MgO crystal showing group of (110)
deformation offsets in region of increasing deformation, going from Ieft to right (l75x).
Courtesy M. L. Kronberg, J. E. May, and J. H. Westbrook. (b) Etched crOSs section of (110)
deformation bands in bent MgO crystal (l30x). Courtesy T. L. Johnston, R. J. Stokes, and C.
H. Li.
.
Fig. 14.8.
(a)
(b)
Fig.14.10. Translation gliding in the (110) direction and on (a) the {110} plane and (b) the
{lOO} plane for crystals with the rock salt structure. {IIOXIIO) glide is preferred.
<
\
714
INTRODUCTION TO CERAMICS
Table 14.1.
15
Crystal
Slip System
Number
o Independent
Systems
--
r------,------,------r-----r-----,12
T = 1300C
10 _
N
Comments
E
u
-....
'Vi
o.
Dll
C (diamond), Si, Ge
NaCl, LiF, MgO, NaF
NaCl, LiF, MgO, NaF
TiC, UC
PbS, PbTe
{I11}(lIO)
{1I0} (110) {I lO} (110)
{001} (110)
{II 1} (110)
{III} (110)
{001} (110)
{I lO} (001)
5
2
At T >0.5Tm
At low
temperatures
At high
temperatures
--
la
~
t)
Vl
Vl
ro
..c:
ro
Vl
<lJ
Vl
<lJ
-c
<lJ
At high
temperatures
3
3
CaFz, U0 2
{001} (110)
{I lO}
{III}
{OOO I} (1120)
Ti0 2
{101} (101)
{110}(001)
MgAl 2O,
{lll}(lIO)
{IIO}
Vl
-c
<lJ
oVl
<lJ
o:::
OL-_ _.........l
0.02
{001} (110)
..c:
>
Vl
N"'o"
6 ~
CaFz, U0 2
--L
--L
0.04
0.06
-L
....J
0.08
0.10
<lJ
o:::
Engineering strain
At high
temperatures
C; (graphite),
A120 3 , BeO
Vl
Vl
even at high temperatures. In weakly ionie crystals such as PbTe and PbS
slip occurs on {lOO} planes at low te'Tlperatures because the polarizability
of the ions reduces the repulsive forces.
In ionic crystals a dislocation must also maint~~r:!-lhe~_ation-anion site:.
ratio. As a result, an edge dislocation-for shpO a (I10) plane in a [11 O]
direction inmagnesium oxide requires the removal of aplane of molecules
(two planes of atoms) with a Burgers vector larger than the elementary
Mg-O separation. Atom pairs must be removed for the crystal to come
back to the correct structure, as iIIustrated in Fig. 14.12.
~~pjc_deformatiofLtQ_take_pJaG~_(experimentally observed
yielding), iLi.~nec_es_s~!.YJocause_.disJocil:!i<:>nst()start moving. If there ar~
n.o dislocations pr~t, som~_'!1~~b~_CL~-!e.d...;jLexistingdislQcationsare
pinne~J~x_i'!1P_urities,some...mustbeJreeliOnce th~..s.ejnitiaLdislocations
are movin&-they_ac.c.elq-te.__9-Dcl_~~Il_~e_~ncreasing multiplication__a!l_d~
Fig. 14.11. In single-crystal MgO slip occurs on a more difficult system for the (l11) axis than
it does for the (J lO) and (lOO) axes. From S. M. Copley and J. A. Pask in Materials Sciellce
Research, Vol. 13, W. W. Kriegel and H. Palmorr 111, Eds., Plenum Press, New York, 1966, pp.
189-224.
Slip direction
)
(110)
Fig. 14.12. Edge dislocation structure in MgO showing slip direction, Burgers' circuit, and
Burgers' vector b.
715
716
INTRODUCTlON TO CERAMICS
~ms.copkYLeJ!ijng.._Plastic..:.deiQnnatiolLcharact~r$tC$_are.related.b.o.th
tJhe,~I1rgYJeq~r~dtoJol}Tl. ci.$locations .ornta teJh~iLf)}.Qy.ement an d
tothe force requredto k~ep them movng atany specfied\'~.l.<;.!y.Ether
c;~ 'be ' resiretio~on plastc deformaton. It'{sfound'lat for filamentary
dslocatonfree whskers a very large stress s necessary to ntate plastc
deformation; however, once slp s ntiated, it contnues at a much lower
stress leve!.
The mcroscopc theory of plastic deformation was founded by Orowan,
who first nterpreted"plastic flow as a .dY.!:1.9:!!1.~PJ.9.f~ssby.Yh.!:,bJb~J:,at~of
glde is gven by the moQiJ~_.d"lSlocationdensitYNnlaI1.d.JheiLaverage
velocity}: Thus, thi'plasticostran rates gven by the productofJ..b_~'~t~~
terms and the magntude of the Burgers vector.
dE
= dt =
N b-V.
ni
(14.6)
Glman and Johnston* first clearly tested ths relatonshp; they were able
to evaluate the velocty and the number of moble dslocatons separately n
UF crystals. As shown n Fg. 14.13, etch-pt technques can be used to
dstngush the moton of an ndvidual dslocaton loop. The large
flat-bottom etch pts correspond to the nital poston of the dslocation,
whereas the ponted-bottom pts show ther postons after an appled
stress has caused them to move.
Stress-stran curves for the same lthum fluorde crystals wth dfferent
surface treatmeil.fareshowo'iriFg. 14~14.In'as-cleaved crys'ials'm~;;h~ni
cal stresses present durngd{;llVage lead to formation of dslocatons'and
easy. slip. After chemicaLp<:lli~h!1g~hgh.yjeld$tress<lnd~efiniteYieTa
point are ob$erv.ed, correspo!}ding'to the elimination of mobiledisiocns
from previoush.anclI]g_~d the requirement fOdrining newo'n'eS-.~A.f!~:~_
polishingand sprinkling with ca'borndin powdei, impacts causeformati.onoLmanynew dislocation loops and again easy plastic deformation.
.Th'!.U.$.,generation
and multiplication
of dislocations require morefo:'c~
-'.
.
'
than their subsequent movement; however, the ratio of these stresses is
iefdom-more than a factor of2,an'd crystals as actually used almost always
have surface imperfections present. The growth of an initial singledslocation loop into a glide band containng many dislocations is illustrated in Fig. 14.15. The stress necessary for dislocation multiplication and
formation of a glide band (Fig. 14.14) corresponds to about 800 g/mm 2 in
this lithium fluoride crystal compared wth the value of ab.out 600 g/mm 2
necessary to enlarge a single half-loop (Fig. 14.13) without multplication
takng place. The stability of small dislocation half-loops and the stresses
'"
*See refercnce 6.
"r
(001)
(100)
--Stress
Glide
direction
1101]
(010)
(b)
Fig. 14.13. Etch pits showing motion of individual dislocation loop in a lithium f1uoride
A - As cleaved
B -Chemically polished
e-
Polished, then
sprinkled with
carborundum
;;;;.
c:
ID
E
o
E
.!f 0.25
"O
c:
ID
Length
Height
Width
CIl
00
= 1 in.
= 55 mils
= 250 mils
4
6
Deflection (mils)
Fig. 14.14. Stress-strain curves showing effects of surface treatment for UF crystals. From
J. J. Gilman and W. G. Johnston, referencc 6.
717
r
i
1
719
----
'.
106 r - - - - - , - - - - - r - - - - - - , - - - , - - - - ,
'U'
<1J
Vl
-2- 100
~
'(3
ID
:>
c:
Ero 10- 2
u
o
Vi
i:S
10- 4
10- 6
Softened
1O- 8 '-100
Fig. 14.15. Growth of glide bands from dislocation half-Ioops. Strain rate 2 x 10-' seco (a)
Single-dislocation half-Ioops at the surface of a LiF single crystal; (b) same crystal after
bending shows glide bands passing through fiveof the half-Ioops; (e) a light etch reveals many
dislocations in each glide bando From J. J. Gilman and W. G. Johnston, reference 6.
718
As grown
-..L_--'
As grown
nOK
--'-_-J..
500 1000
5000 10,000
Applied shear stress (g/mm 2)
-'
50,000
Fig.14.16. Dislocation velocities in a typical LiF crystal as grown, heat-treated, and at nK.
From W. G. Johnston and J. J. Gilman, J. Appl. Phys., 30, 192 (1959).
*J.
/
INTRODUCTION TO CERAMICS
720
721
:oo
Dislocation velocty
Vl
o~
<1J.Q
.D Vl
E'6
:::l
1 11
}I
Strain~
Fig. 14.18. Different shapes o the stress-strain curve at the beginning o the yielding process
and interpretation in terms o dislocation density and velocity. Fram J. J. Gilman, reerence &
1
I
I~ Germanium
'0.
I
11
oC
.8
.1
I
l.
10 -3
10- 2
Compressive strain,
10- 1
E=
6L/L
Fig. 14.17. Average etch-pit density versus plastic strain in LiF, ram W. G.
Johnston and J. J. Gilman, J. Appl. Phys.,
30,129 (1959), and in germanium, framI. R.
Patel and B. H. Alexander, Acta Met., 4,
385 (1956).
~tr~~~-!_~hf~~~~~!.slocatiorc'i!ioTi(m~:}li:t,s,,_tJi~~~producCoLdislo.catio~
concentration.<l:!1:d_~~Li{fYTs suffi<::i_e.~_tJ-,llow the crystal to defor~'~tthe
"
.. _ . . . . . . _ .
',_'
. . . . _
l.
SOCo
723
,
(
Table 14.2.
(V-T")
Material
Crystal Structure
Rock salt
Rock salt
Rock salt
Rock salt
Rock salt
Rock salt
Flourite
Fluorite
Diamond
Diamond
Diamond
Diamond
LiF
NaCI
NaCI (ultra high purity)
KCI
KBr
MgO
CaF z
UO z
Oe
Si
OaSb
InSb
..)
m (at R.T.)"
13.5-21
7.8-29.5
3.9
20
65
2.5-6
7.0
4.5-7.3
1.35-1.9b
1.4-1.5 b
2.0
1.87 b
1
1
-10.0
~I
1.2
10
15
Eu
tiD
-'"
7.5
6.25
NO
10
6.25 x 10
VI
VI
3 x 10
~
4
VI
VI
VI
10 1.[
'"
o'"
.c
VI
"O
:>
VI
"O
o'"
Do
g
~
VI
5.0
.c
'"
:>
'Vi
M
VI
o:::
VI
o:::
'"
2800
2400
.-
.e.
VI
VI
__
0 _ _ 19.0%
1600
1200
>=
Deformation (% )
(b)
800
400
Fig. 14.19 (Continued). (b) At low temperatures, irradiation hardens ceramic material s as
shown here for LiF at room temperature. The dosages are in e1ectrons/cm'. From A. D.
Whapham and M. J. Makin, Phil. Mag., 5, 237-250 (1960).
o
6
69% KBr
3.3% KBr
(14.7)
0~=~10~0;==~2~O~0==K=C~:~00;==~40~0:----5.J0-0-=~J600
Temperature
(oC)
(a)
Fig. 14.19. (a) Yield stress of KCI-KBr solid solutions as a function of temperature
'
compressed along (lOO) direction. From N. S. Stoloff et al., J. Appl. Phys., 34, 3315 (1%3).
\..
7:h
10
KBr
2000
"O
Qj
The strain hardening for MgO compressed in three orientations was shown
in Fig. 14.11 (sIop'e or~ versus E) tQ..a~_b_~J.!l!l-,;ti~'.1_()fcl)lsJallograp_~ic
Qrientation.
~motion of dislocations may also be inhibited by impurities in the
lattice~,S~lisfihltionalimpuritieswlih the same'valence blwith different
ionie rad;]'crease the yield strength becse of the associated strain field
around'1he impdly (Fig. 14.19a). In fact the dislocations tend to become
INTRODUCTION TO CERAMICS
724
40
4.0
1/2.
3.5
30
3.0
:2
;
Vl
Vl
Vl
Vl
Q)
Q)
20 t:;
t:; 2.0
tlll
tlll
e
.:
Q)
Q)
Q)
Q)
e
e
.~ 1.5
';'
10
1.0
(14.8)
0.5
Data in Fig. 14.20b show this dependence for several alkali halide crystals.
However more complex behavior has been observed (Fig. 14.21 and 14.22) .
and must be related to impurity segregation, impurity oxidation state, etc.
In.manycases the solute mayformprecipitates-whichalso act as
inhibitors to dislocation motion. The precipitation-hardening mechanism is
geeraI-Y'more-effeciive than solid-solution strengthening. The AgCl-NaCI
system has limited solid-solid solubility below 175C, which leads to
precipitation in single crystals and results in large increases in the
compressive yield strength oyer the pure crystals and over the solidsolution-strengthened crystals (Fig. 14.21).
IncI'e~sing. the teJl1QeIJlJ!!!'.e. at .which deformation tests are maqe
decreases the effects of all these strengtheningtechniques (strain:-so'iti~n,
precipitation). The lattice planes are more "flexible"because ofabsorbed
thermal energy:-Which causes'l~iti~~'b;~o~s; "thus the impedence.of
these obsta.cIes is less. In -addjtio~, slip which may be impeded on on~_~Ell
systern..may be accommodated on. another sys!e.m.,; H:i&J)~L!.~!1JP~I.JlJ~I'~.s
alsoincrease theamilt"oLsolubleimpurities andcan lead to coarseningO,f
predpiiates (Chapter 9),which.de:eases~Jh~~~i111mbeI::O-C()FsiacTesjo
dislocation motion. A. J offe and others * indicated that sodium chloride was
brittl~in air butremained ductile when immersed in water so that a new
surface was continually being formed. This was believed to result from the
removal of surface mkrocracks by the solubility of the surface in water.
Recently it has been found by A. E. Gorum, E. R. Parker, and J. A. Paskt
and A. Aerts and W. D. Dekeysed that freshly cIeaved samples of NaCl,
KCI
0.5
1.0
Engineering strain
(%)
(al
40
..
r;;l
IJ
o
.
30
[',
..
[',
O
2.0
1.5
E
E
O
"";,.. 2
()
[',
f!.
()
;;:;
o
20
KCI
Ca2+ o
&
;;,..
b
&
0.01
....
KBr
Sr2+ o
..
Ba2+ [',
....
NaCI
NaBr
IJ
I'l
()
<SI
0.04
0.03
e 112 (mole fraction) 112
0.02
0.05
10
lb)
Fig. 14.20. (a) Engineering stress-strain curves of KCI crystals doped wi.th various. amounts
of Sr'+. Crystals tested in compression in a (100) direction after air-coohng followmg ~ half
hour anneal at 725C. (b) Values of yield strength versus the square root of concentrahon o
M2+ for various dopants in alkali halide crystals. From G. Y. Chin et al.,J. Am. Ceram. Soc., 56,
369 (1973).
725
726
INTRODUCTION TO CERAMICS
727
900 ,----,----,--,--.,--,----.-----r--,------,---,
soo
so
700
.~ 70
'"
P
~
500
400
E
~
600
6.0
"'E
5.0 ~
-'"
60
"'o
4.0 :::;
'"'"
'"
"C
~ 50
,c:::=------~
~ 40
3.0
2.0
'"
'">
.~
'"a.
1.0
':;;'
'"
>
':j 30
a.
300
'"'"
'"
:""!
20
200
10
100
Strair
40
50
60
80
Molecular percent
90
100
NaCl
1%
Fig. 14.22. Alloying single-crystal MgO results in hardening, but the effect is limited with
NiO. From T. S. Liu, R. J. Stokes and C. H. Li, J. Am. Ceram. Soc., 47, 276-279 (1964).
(al
(
75%
25
20%
'"o
50%
%- Molecular percent
NaCI
x 20
'Vi
.9-
'"'"
'">
'"
a.
'Vi
'"'"
E
o
u
15
14.3
10
85%
5%
O
2%
Strain
(bl
Fig. 14.21. (a) Solid-solution and (b) preciptaton hardening in the silver chloride-sodium
chloride alloy system. From R. J. Stokes and C. H. L, Acta Met., ID, 535 (1962).
re-
~Cl,
and other ionic crystals remain ductile for long periods of time if
stored under conditions such that surface damage cannot occur. The
several mechanisms by which surface contamination can prevent ductility
have not been completely elucidated. Various mechanisms by which
*Mater. Sci.,
1, 114 (1963).
INTRODUCTION TO CERAMICS
728
'"E
..2
tlD
s.
'"'"
~
'"
ro
e
o
el.
o
""IDu
o::
E'" 10-,1
:::.
07
0.9
1.0
1.3
TA
1.5
1.8
(kg/mm- 2)
22
2.6
~ ~
"Jr
1O-5/see
,
slip. The variation of the yield stress with temperature and strain rate is
shown in Fig. 14.24.
l.mpu!:J~s.in. the lattice cause hardening, as discussed for r9.~JL_~alt
structures. Dopants such'is-N aF, YF 3 , or N dF 3 cause a dipole tobe formed
between the impurity and:'ihe liiitice defect (vacancy or interstiCiJ),.~whlcfi'
g'ives a very effective obstacle to dislocation motio,n. The effects of 0.002%
Nd in CaF z can be seen in the yield characteristics at 160C (Fig. 14.25),
more than doubling the value from 1500 to 3500 kg/mm z
L-_---:-=-:-----..J
100
150
Temperature (OC)
Fig. 14.24. Temperature dependence of critical resolved shear stress of CaF2 From P. L.
Pratt, C. Roy and A. G. Evans, Mat. Sci. Res., 3, 225 (1966).
3.2
Fig. 14.23. The stress dependence of the dislocation velocity. From A. G. Evans and P. L.
Pratt, Phi/o Mag., 20, 1213 (1969).
14.4
50
1% Strain
5
1=4
E
ti,
-25
'"'" 3
u'"
~
.!!!
~2
<>:
Elongalion
Fig. 14.25. Slress-strain curves of CaF2 single cryslals of various dopant levels tested in
compression along the [112] direclion. From R. N. Kalz and R. L. Coble.
730
2200
20
18
14
o
o
12
16
'"
11
10
14
J1o
- 9 "'E
u
12
8
Ul
Ul
~Ul
Fracture
"O
"'o
Ul
Ul
~
Ul
"O
;;:
- 14
- 0.1 in.lin.lmin
tlll
-'"
10
Fracture
x 1260 (2300)
Upper yield stress
13
;;:
20
731
INTRODUCTION TO CERAMICS
4
12
16
-10
"'E
'i
.,0.
12
'-
1200
Ul
Ul
- 0.025 in./in.lmin
U5
1700
1800
4
- 0.001 in./in. min
1470 (2678)
1570 (2858)
1670 (3038)
O '----''--'--':..u.L
1600
Fig. 14,26 (Continued). (b) I1lustration oi the strong dependence oi yield stress on
temperature and strain rate ior single-crystal AI,O,. From M. L. Kronberg, J. Am. Ceram.
Soc" 45, 274-279 (1962).
1500
Temp (oC)
(b)
- 0.01 in./in.lmin
--1....:.0_.0_1.L.~
Ll.L.lL_
----.J
Elongation (in,)
(a)
Fig. 14.26. (a) Deiormation behavior oi single-crystal alumina. On the leit the effect oi
temperature and on the right the effect oi strain rateo A sharp yield stress and a large yield drop
are apparent.
".
1
B
w 3
.e::
.:g
"O
.g
QJ
f-
o0:;--"""~~"--~::---::::!:-;;--~--.l--.l---.1
300
'400
of the structure is also indicated. These are the slip directions in this
structure and correspond to the minimum Burgers vector of a dislocation
required for basal plane slip. This Burgers,{~.fJQ.!:ls substantially larger
than the one that would be required for close~pac-kedhexagonalmetal
(the o;ygen-'~xygen dislnce in Fig. 14:28). ~--- --.__
The large Burgers vector and the fact that the ion motion which
corresponds to moving the dislocation through the structure is a jump from
site 1 to site 2, directly over an oxygen ion in the next layer below, certainly
would require a large amount of energy for dislocation motion. Hence it
seems more likely that the dislocation will slip as two partial dislocations
with the Burger~ vectors b' and b". The energy dependence of a dislocation
on b2 , as discussed in Chapter 4, means that separation into partials
corresponds to a lesser total energy for the dislocation, but the region
between the two partial dislocations is not crystallographically perfect.
Instead, it corresponds to a stacking fault or error in the order in which
atomic layers are added onto the basal plane. In this particular example of a
partial dislocation, the Burgers circuit around one of the partial dislocations causes the oxygen ions to be in satisfactory registry but not the
aluminum ions and cation vacancies. The ion motion to move the
dislocations from sites 1 to 3 and then from 3 to 2 can take place along
saddle points in the structure and should be a much lower-energy process
than the direct 1 to 3 movement.
A further reduction in the total dislocation line energy and in the energy
necessary to move the dislocation through the lattice can be achieved by
also moving the aluminum ions along through troughs in the structure by
the paths b:-b~-b':-b~. This corresponds to splitting the total dislocation
into four partials separated by areas of stacking faults. The plasticdeformation process, as illustrated in Fig. 14.29, then consists of moving
these associated partial dislocations through the structure.
V1
~
.;
e
733
QJ
600
Time lhn
,
I
Faulted
Faulted
Faulted
1';1
F2
F
_----;.--:~ Unslipped
Slipped
material
Fig. 1,~.28. Structure of AlzO., sh0v.:ing two layers of large oxygen ions with hexagonal array
l~ Al a~d ~acant octahedral mtersbces. Slip directions and Burgers' vector b for basal plane
s Ip are mdlcated.
732
material
"~----~-------,/
Extended dislocation
734
INTRODUCTION TO CERAMICS
(a)
30
:s
'"'"~
Air annealed
20
Vacuum
annealed
:;;
.r:
'"
CfJ
As received
10
0.50
0.36
1%
o----<
Elongation
(b)
Verneuil sapphre
0
0.0002 in,min
1500
!\
r
I,
i
"'E 20
Laboratory
Ilamepolished
~
~
Air annealed
15
U;
Commercal
Ilamepolished
'"
.r:
CfJ
10
As received
005
0.16
0.06
0.13
1%
o----<
Elongation
Fig. 14.30. (a) Effect of thermal treatments on ntial yielding ~f (A) Czochralski and (B)
Verneuil sapphire crystals. f is the yield drop factor. From R. F. Flrestone and A. H. Heuer, J.
. / The general shape of creep curves and their change with stress and
temperature have been described in Figs. 14.3, 14.4, and 14.27. TQe,
time-dependent deformation becomes increasingly im-.pQrJ!lnLa~JhUem
perature level is raise<tinlhe_use_LJ~fractories as structural materials at
4igh-Jli~p~t1!Jr~s, cr~J~p_..and__C.I:eep.:uiJ~lJre..~~~op.irties ._aS_~.Je.--rnain
mecjlNdc;Lcriteriafor.usefulness. As it becomes more important to use
ceramics in high-temperature applications, especiaHy in energyconversion systems, the understandingof creep becomes more important.
735
'.
736'
INTRODUCTION TO CERAMICS
'737
12 1 - - - - , - - - , - - _ - ,_ _,--_ _.,.--_----,
was discussed in Chapter 9. The two rate-controlling deformation processes which describe the deformation of a wide range of ceramic
materials are dislocation c1imb and diffusional creep. Grain-boundary
sliding may also be important under sorne conditions.
Dislocation Climb. Dislocation c1imb, the movement of dislocations
out of their slip planes, requires a diffusional kind of jump of an atom
aboye the dislocation line into the dislocation; this is equivalent to the
motion of the dislocation into an adjacent plane, just as volume diffusion
isequivalent to a vacancy migration. Thus the climb process depends on
., the diffusion of lattice vacancies and the rate of deformation is controlled
by diffusion (Fig. 14.31). The steady-state strain rate for small stresses
15
~1O
'" E
--
u
t>D
-'"
'"'"
~
~
ro
-'=
Q)
'"
Q)
>
Q)
>
o 4
'"
~
ro
u
8""
--
1100
'2
~
1300
1400
1500
Temperature (OC)
1600
1700
, Vacancy/
(b)
Fig. 14.30 (Continued). (b) Alloying single crystals of AbO, ncreases its strength (tested in
air). From K. C. Radford and P. L. Pral(, Proc. Bril. Ceram. Soc., 15, 185-202 (1970).
. Acr
,~=
(llH)
exp - RT .
(14.9)
101
Obstacle
Of
1
(b)
(a)
Fig. 14.31. By absorbing vacancies, a dislocation can climb out of its slip plane to where its
glide is not hindered by an obstacle.
7T
Dcr 4 . 5
= bO.5G3.5No.5kT
(14.10)
*J.
738
INTRODUCTION TO CERAMICS
20
739
~~~~~"--"--'-'--'-'--'--""'--""'--""'-----rr-:-l
ro
'6
~
'1
10
8
:fl
6
4
e
ti"o
e
ro
&
1L-L......L......L......L.......L-.L-.l..-...L-..I-..L-..L-...l-...l-...l---L-J
'/
Radius 01 curvature = 2 mm
O
10
20
30
40
50
60
70
80
Time (hr)
I
r
Fig. 14.32. Effect of annealing on glide bands in plastically bent LiF crystal (500x). (a)
Etched before annea1; (b) annea1ed for 16 hr at 400C and re-etched. Large flat-bottomed pits
are original sites; small pointed pits are sites after anneal. From J. J.'Gilman and W. G.
Johnston, J. Appl. Phys., 7, 1018-1022 (1956).
[Ti
+ B / d 1/2
(14.11)
~~~l1tan<:l.(Tj,Jhe
fiom
*Z.
740
741
INTRODUCTION TO CERAMICS
30
'='1
E
~
~ 20
3
'i
<
Cl.
'"
'"o
V;
"O
O;
>=
(J
~
10
o
O
O
0.2
0.4
0.6
Fig. 14.34. Grain-size dependence of yield strength in hot-forged KCl materials (e-pure,
(100) forgings, O-pure, (111) forgings, and x-0.1 mIo SrCI, doped, (100) forgings). From
Roy Rice.
= kTd 2
(14.12)
Fig.14.35. Migration of atoms to grain boundaries parallel to the compressive stress results
in elongation of the grain and consequent strain.
(14.13)
where 8 is the grain-boundary width (see Section 6.6) and D b the diffusion
coefficient in the grain boundary.
As discussed in Chapter 6 andin Chapter 9,<iiJl:!J:.s.io!.!.!LJ~!:~~s_s~.j.!!.
ceramifj)-=:are_.oftencomplex
bec:::i\!se
of the
requirement
of. charge
_'.'
.
'..
.. ' . _. "-::1:
-neutrality.and because cations and anions ofte diff.Ist different rates.
Th~ effect~' oT;~bipolar diffusion and of stoidiiometry and impuritieS"
must be considered when ascertaining the controlling mcchanisms of
creep. Generally, the measured stress dependence and grain-size dependence are used to infer the operative mechanism, that s, Eqs. 14.10,14.12,
*J. Appl. Phys., 34, 1679 (1963).
742
INTRODUCTION TO CERAMICS
743
10- 5
30
20
10
Jlm
UJ
o
20
10- 6
cm- 2
10
"-
la)
Fig. 14.36. (a) Creep substructure formation in MgO crystals deformed at 1200C. The strain
rate , subgrain size OS, and dislocation density p, are shown as a function of strain. From
B. II1schner, High Temperatllre Plasticity, Springer-Verlag, Berlin, 1973.
stress values for various materials are generally proportional to the shear
modulus and the Burgers vector (subgrain size rx Gb{O").
Deformation Maps. M. Ashby* has introduced the deformationmechanism map as a method of displaying a material's deformation
behavior. Diagrams are constructed using the homologous temperature
T{Tm , where Tm is the absolute melting-point temperature, and the
normalized stress o"{G, where G is the shear modulus, as the axes;
various steady-state deformation mechanisms which are dominant in a
particular stress-temperature region are depicted as fields. The maps are
constructed from data for a given material using the strain-rate equations
(e.g., Eqs. 14.9, 14.12, and. 14.13). Figure 14.37 shows the tentative map for
magnesia.
* Phys.
,.
*Acta
744
INTRODUCTION TO CERAMICS
745
100
.",
.s
::
Deformed polycrystalline
sample <NaCli
"t:I
QJ
Ul
t-----+--<
>.
"O
ro
QJ
U5
10-3
la
10- 1
Ul
"O
QJ
E 10-
o
Z
Diffusional creep
la
Mg,~+
Stress (psi)
Fig. 14.36 (Colltillued). (b) Steady-state subgrain diameter-stress dependence for NaCI and
KCI. From M. F. Van, et al., reference 2.
Boundary
.1
.2
.3
.4
.5
.6.7
.10
Fig. 14.37.
IX
(1- p2/YI
(14.14)
746
, INTRODUCTION TO CERAMICS
40,000 r - - . . . - - - - - - - r - - - r - - - . , . - - - - , - - - - - ,
1Creep rate
10,000
600 psi
'i
g'"'"
;;;'"
-C
4,000
.~
--g
Q)
~
~
-C
'"E
o-
::J
'x
!ti
10- 5 :ll
1,000
400
10- 6
100
O
Fig. 14.38.
0.1
0.2
0.3
0.4
Volume fraction pores
0.5
747
Creep of Refractories
..
749
III
"O
fE
o
bll
::E
00
-the......CL~talline.R_l1a.~y_JhLglasL~~ur.S,J~~'.l1ItiKj_--!.he
weakest
.-structure_.Eor--highostrengthrefclories, complet~.~liIP-.iI1-on of the--g}ass-p.nase..s.....necessary, .buL because thisis not usually feasibfe~ne-
second approach is to minimize the w~ing-cIlaracteriscs.-ThiS"is
possibfebyt1nng le(;er.~iiijcatt~mperaturesat\Vhich-\'erylittIe wettill"g
or by modifyingth.~"glass compositionsoihat "ifde"SIfwef1&e
crystalline phases. This is not easily accomplished, since these same'
grain-boundary phases make possible the sintering of ceramics to higher
densities at lower temperatures. Another.met.ho<Lof
strengthening
refrac_.-._---._
__
occurs
..
~'
o,
ca
Vl
E c:
-""
ca
,--
..;-
0,....5
-,-
0,._7_ _--,
11
11
..
T/TM
'E
-o
o
_-
2u
bll
bll
CI)
(:J
t.n
.;
.9M
u>
u>
J--------
-----
--------
....
.3
III
N
.;;
J;u>
(J
~ lO"'
c:
III
1-
B t1
.....
IJ
E
ro
~ij
ro
'fO
11
0...0
~.
(:J
IJ
<:l
11
~--'-'-L-.L-...L.._~U-L-L.J--.l_---lJl..LLLLL-L---.J
800
2000
c:i
Fig. 14.40. (a) Tensile stress to activate various slip systems in single-crystal AI 2 0, and f10w
stress for fine-grained alumina indicating diffusional creep rather than plastic f1ow.
748
750
INTRODUCTION TO CERAMICS
751
1100
A1 2 0 3 + MgO
-9
-12
D A1 calculaled Irom dala
-ll
<l)
"-
-12
"'E
~
c::tlD
m;,,,,,
-13
DAl
-14
u
V1
~S. - 5 -70
-13
<l)
V1
~
~
C::'"
'O
S!
-15
i5 D,\1
Calculaled Irom dala
in agreemenl wilh
Eq.14.13
d - 1-10 microns
-16
tlD
1
-14
-15
I!
]
-16
S!
-17
-18
-19
4.2
4.2
5.0
5.8
10'I/T (oKJ
6.6
7.4
le)
Fig. 14.40 (Continued). (e) Calculated grain-boundary diffusion (Al) controlled creep at
T < 1500C in MgO saturated AbOJ. From R. M. Cannon and R. L. Coble, reference 2.
Fig. 14.40 (Continued). (b) Calculated diffusion coefficient for MgO saturated AbOJ
indicating Al ion 1attice diffusion controlled creep at T> 1400C. The a1uminum and oxygen
tracer diffusion coefficients are a1so shown.
"(
752
)'
g"
$ te
INTRODUCTION TO CERAMICS
Stress (psi)
fe:>
t e ' hntM
ti
t'
ah
tte
753
or decrease the yield strength. Figure 14.42 shows the effect of temperature on the yield strength of several carbides. Note also the importance of
,f
.P.'"
lb
lO' 1 _2_,_0_3_0rOO_40'--0_0_60--'0r-0--'l--l5_00---::..:11:.:.;.OT...::.O--'I...::.5r'0...::.00:....,
2
10- 2
MNen
\E--
SIO";":::---
,
,,
/~
p'
//
60
40
.-p/
cJ::/'C_-c:;\':.--
:;; 10- 3
.E
b
e
,{',---
40
';
c.
.c
o
'"....
~
Vi 20 -
<])
-o
o:;
>=
20
10 - 5 ';---L--;;";;--L---:;";,.--.L--::l::---.J-=-l::----L_,L--.L-J
3.1
al
~3
log stress
1100
Fig. 14.41. Steady-state creep behavior of UD, can be divided into two regimes with
different stress exponents. The transition between the regimes decreases with increasing
temperatures. From L. E. Poteat and C. S. Yust in Ceramic Microstructures, R. M. Fulrath
and J. A. Pask, Eds., John Wiley & Sons, Inc., New York" 1%8.
1500
1900
Temperature ('C)
Fig. 14.42. The temperature dependence of the yield stress for a number of transition
metal carbides. High temperatures are required for plastic deformation, and the strength
is greatly affected by stoichiometry. From G. E. Hollox, NBS Special Publication 303,
1969, pp. 201-215.
*J.
754
INTRODUCTION TO CERAMICS
755
Material
Polycrystalline Ah03
Polycrystalline BeO
Polycrystallme MgO (slip cast)
Polycrystalline MgO (hydl'ostatic pl'essed)
Polycrystalline MgAh04 (2-5.)
Polycrystalline MgAI 20 4 (1-3 mm)
Polycrystalline Th0 2
Polycl'ystalline Zr02 (stabilizcd)
Quartz glass
80ft glass
Insulating fil'ebl'ick
X 10- 5
X 10- 5)*
X 10- 5
X 10- 5
X 10-5
X 10- 5
X 10- 5) *
3 X 10- 6
20,000 X 10- 5
1.9 X 109 X 10- 5
100,000 X 10- 6
Al 10,000 psi
SiAlN
o Sialon 59 D
N { 6 HS 130 - 1
S13
4
O HS 130 - 2
0.13
(30
33
3.3
213.3
0.1
(100
* Extrapolated.
Fig. 14.43. Steady-state creep rate versus reciprocal absolute temperature for SiAlN 59D
and S"N. HS130-1 tested in air and for HS130-2 tested in argon; data normalized lo 10,000 psi.
From M. S. Seltzer, A. H. Clauer, and B. A. Wilcox, Battelle, Columbus, hio, 1974.
these materials are broadly divided into two groups: the noncrystalline
glasses are much more readily deformed than the crystalline oxide
materials. If we consider variations resuiting from porosity, illustrated in
Fig. 14.38, and variations resuiting from differences in grain size, we
conclude that most of the differences reported between different materials are probably unrelated to changes in the composition or crystal
structure but rather are caused by changes in microstructure. This
conclusion is illustrated in Fig. 14.44, which shows the high-temperature,
low-stress creep rates for a number of polycrystalline oxides. Variations
among different materials can all be included in a band of values' the
differences among individual polycrystalline oxides are best correiated
with microstructure variations.
0.001
8
0.005
0.0005
0.00002
14.7
{
I
756
INTRODUCTION TO CERAMICS
757
where the dots denote the time derivatives of the respective quantities.
Since for a normal stress a(14.16)
it follows that
z",,~omp,,~;,"~ !
-;:-
MgO-iension
-'E
/
o
AI20a-compression~/
""'-
, 10- 2
'Vi
Q.
L{)
Al,O,-I~,;,"
ro
~ lO-a
/
/
/~~~~~ion
\
c:
.~
U5
o AI 20 a -compression
8eO, MgOcompression
MgO-te~sion
10- 6
';,:;--;:;;:;~~-:-:::--:::~~---L---.J
0.70
Fig. 14.44.
0.40
0.35
a-A
F
= - AE. = -31)
- = -31)
-
Hence all cross sections decrease in area at arate which depends not on
their area but only on the load and the viscosity.
At sufficiently high stress levels, the viscosity is expected to decrease
with increasing stress. Such stress-dependent viscosities are familiar to
the polymer scientist but are noted less frequently for oxide liquids,
presumably because of the higher critical stresses for non-Newtonian
behavior. For a homogeneous Rb 20-Si02 glass tested in a temperature
range in which the low-stress viscosities were between 10 13 .5 and 10 17 . 1 P,
the critical stress level for non-Newtonian f10w was found* to be about
109. 1 dyne/cm 2 At higher stresses, the viscosity decreases markedly with
increasing stress. The development of two-phase iquid structures by a
phase-separation process apparently increases the critical stress for
non-Newtonian flow and results in a viscosity which increases over long
periods of tme at a given temperature.
When high pressure is applied to a liqud, the vscosity at any gven
temperature is observed to increase. Among oxides, this effect has been
most extensively studed for B2 0 3 t Pressures as small as 1000 atm
appled to this material increase its viscosity by as much as a factor of 4.
The effect of pressure on viscosty is larger at lower temperatures.
Models for Flow. A number of models have been proposed to describe
the flow behavior of liquds.
1. ASSOLUTE-RATE THEORY. According to this model, vscous flow
can be viewed as arate process dominated by a transition state of high
energy. Transport over the energy barriers is biased by the applied stress,
and the standard treatmentt ye1ds an expression for the viscosity
7
. L
Ji
E=L =-A
(14.15)
(14.17)
1)
= 2vo
(14.18)
where 7 s the shear stress, flE is the height of the energy barrier in the
absence of stress, Vo is the number of tmes per second the barrier is
*J. H. Li and D. R. Uhlmann, J. NOII-Crysl. Solds, 3, 127 (1970).
tL. L. Spcrry and J. D. Mackenzie, Phys. Chem. Glasses, 9, 91 (1968).
tS. K. Glasstone, K. J. Laidler, and H. Eyring, Tite Tlteory o/ Rate Processes,
McGraw-Hill Book Company, New York, 1941}.
758
INTRODUCTION TO CERAMICS
attempted, and V o is the f10w volume. For small stress (rVo <{ 2kT). The
viscosity on this model should be independent of stress; at large stresses,
the viscosity should decrease strongly with increasing temperature. For the
small-stress case appropriate in most experimental situations, Eq. 14.18
becomes
1]
= VokT
V o exp
(dE)
kT
'=
1]0
(dE)
exp kT
3. EXCESS-ENTROPY THEORY. According to this model, the decrease in configurational entropy of a liquid with falling temperature
results in an increased difficulty of deformation. Considering the size.of
the smallest regio n of a system which can change to .a new config.uratIO.n
without simultaneous external changes in configurahon and relatmg thls
to the configurational entropy, an expression for the viscosity can be
obtained:*
(14.19)
The c10se relation of this expression to similar functions for diffusion (see
Chapter 6) and other processes treated by absolute-rate theory is
apparent.
2. FREE-VOLUME THEORY. According to this model, the critical
step in f10w is opening a void of sorne critical volume to permit molecular
motion. The void is viewed as forming by the redistribution of free
volume VI in the system. The free volume is defined as
1]
1]
'=
Bexp (K;o)
(14.21)
'=
e exp [~]
TS
(14.23)
where
(14.20)
759
I
(
:
1]
= E exp [_F_]
T- T o
(14.24)
760
INTRODUCTION TO CERAMICS
Litlleton softening
point
761
.c
.;;
10 7
Vl
'>
Working {
range
10 6
10 5
10 2 -
Melting {
range
1 ~~~~~!::..J.~----L.-L--L-L....J.......J
200
800 1000 1200 1400 1600
Temperature ("C)
Fg. 14.45.
10 2 L--J-_..L---l-.-L-..L---l-.-L-----,-J
straight line, the slope of which determines the activation energy. The
~tro~g temperature dependence of an oxide glass-forming material is shown
m Flg. 14.46. The app~rent activation energy for flow is higher at low
tempe~atur~s than at hlgh te~peratures. For most oxide glass formers,
excludmg S10z and GeO z, whlch exhibit Arrhenian behavior over the fuIl
range, the apparent activation energy at low temperatures is larger by a
factor. of 2 or 3 than that at high temperatures. In contrast, for most
organ!c glass formers dE low lemperalure exceeds dE h;gh lemperalUre by an order of
magmtude or more. This change in apparent activation energy with
temperature, together with the magnitudes of the dE's obtained from the
l~w-tempe~ature data, indicates that the flow cannot be regarded as a
~Imply achvated process, as suggested by absolute-rate theory but that it
mv~lv~s coope~ative motion of more than one atom or mole~ule.
Slgmficant dff~rences ~xist in the detailed forms of the viscositytemperatu~e. relahons of ddferent liquids. Sorne materials, like SiOz and
GeOz, exhlblt an Arrhenian or nearly Arrhenian temperature dependence
over ~he fu~1 range of temperature in which data are available. Other
maten~ls, hke ~Z03' salol, and possibly the alkali silicates, exhibit
Arrhema~ be?avlOr a~ low t~mp~ratur.es, as the glass transition is ap?roached, an mtermedlate reglOn, m WhlCh appreciable curvature is found
m the log TI versus liT relation; and a high-temperature region, corres-
Fig. 14.46. Vscosity-temperature relation for sodium disilicate. From G. S. Meiling and D.
R. Uhlmann, Phys. Chem. Glasses, 8, 62 (1%7).
ponding to the fluid range, of much smaIler and in sorne cases negligible
curvature. For other materials, like anorthite (CaO' Alz03 2SiO z) and
O-terphenyl, curvature in the log TI versus liT relation is observed over
the fuIl rarige of viscosity, with the curvature being smaIl at high and low
temperatures and large at intermediate temperatures. For others, like
glycerin, more gradual curvature is observed over the entire range of
temperature. These differences in flow behavior are illustrated by the data
on a number of organic liquids shown in Fig. 14.47.
Such complexity in form of the temperature dependence of viscosity is
. beyond description by any of the standard theoretical models, each of
which is based on a relatively simple picture of the flow process. It seems,
however, that free-volume models can provide a useful representation of
4
flow behavior in the fluid range (TI < 103 .5 - 10 P), and it is suggested that
they be applied in this range and not in the vicinity of the glass transition,
the range in which significant variability in form is observed.
Time Dependence. In the regio n of the glass transition, the viscosity of
glass-forming liquids is observed to depend on time. This is illustrated by
762
INTRODUCTION TO CERAMICS
763
15.5.------.-------,------,-------,
15.0 r--'-"---~=---T=-----=;::--"':::;::""':'=;:"~
~ 15.0
o
:;:
10.0
ii
.2
;
~
.;
o
U
<Il
.;;;
!llJ
14.0 l -_ _----l
-:-:::-I::-:;-_ _----'
2000
5.0
Fig. 14.48. Viscosity-lime curves for two soda-lime-silicate glass samples at 486.7"C. Upper
curve, sample previously healed al 477.8C for 64 hr; lower curve, sample in .fres~ly drawn
condilion. From J. E. Stanworlh, Physical Properties 01 Glasses, Oxford Umverslty Press,
1953.
4.000
ljTx 103o K- l
5000
Fig. 14.47. Viscosity-temperature relations for glycerin, a-phenyl, o-cresol, salol, and
o-terphenyl. From W. T. Laughlin and D. R. Uhlmann, J. Phys. Chem., 76, 2317 (1972).
~he data sh?wn. in Fig. 14.48. These data indicate that the viscosity
mcreas.es wlth time for specimens cooled to the annealing temperature
from hlgher temperatures and decreases with time for specimens initially
h~ld a~ temperatures below the annealing temperature. In both cases, the
vIscostty approaches an equilibrium value which is characteristic of the
annealing temperature.
The variations shown in Fig. 14.48 can qualitatively be related to the
accomp~nying changes of the volume with time. For samples cooled to
th.e ho~dmg temperature from higher temperatures, the volume de creases
wtth time toward its equilibrium value. This decrease in volume and
hen~e in free volume, is accompanied by an increase in the viscosi;y. In
detall, th~ form o! the data in the figure is unexpected. The top curve for
the sp~clmen whlch had a higher initial viscosity indicates more rapid
re!axatIon to the eq~i~i?riu~ visc?sity than the lower curve for the sample
wIth the smaller Imtml vIscoslty. In contrast to this behavior, the
r'
I
!
I
I
765
which serve as weak links in the Si-O network. For a typical soda-limesilicate glass at high temperatures, the effectiveness of various divalent
cations in decreasing the viscosity seems to correlate with their ionic
radii. This is illustrated by the data shown in Fig. 14.51.
In borate glasses, the viscosity at high temperatures is observed to
decrease with increasing concentration of alkali oxide. At intermediate
temperatures the viscosity decreases with small additions of alkali oxide,
then increases to a maximum, and then decreases again with increasing
modifier concentration; at low temperatures the viscosity increases with
alkali oxide additions. This behavior is not satisfactorily understood at the
present time.
In complex oxide glasses, the addition of modifying cations generally
decreases the viscosity at any given temperature; the addition of silica or
alumina usually increases it. Beyond this, there is a general mixing effect,
in which the addition of more than one type of alkali or alkaline earth ion
results in a higher viscosity than would be obtained with the same total
100
Si
8
'V>
2i
'0
.e 80
U
;:6
~5
'<t
.....
Vl
.;;
ro
~
'Vi
.w 4
60
VI
:>
40
Mg-
~~
Ni",Co
Mn Cu
Ca
Cd
O'--~-:;;--;;~~----:l~~---l
10 20
30 40
Metal oxide (mole
0.50
%)
-'Pb
1.50
Fig. 14:50. Eff~c~ of modifie: oxides on vscosity of fused silica. O, Li,O-SiO" 1400C' O
K;O-SIO" 1600 C, f::", BaO-SIO" 1700C. From J. O'M. Bockris J. D Mac'
"
Kltchener, Faraday Soc., 51, 1734 (1955).
'
.
kenzle, and J. A.
764
1.00
B.
'"I
I
766
INTRODUCTION TO CERAMICS
The application of pressure, not necessarily hydrostatic, has been o?served to alfect
14.2. . severa 1 processe s whl'ch are presumed to be diffusion-controlled. Glve several
.
. waysf
in which pressure can affect self-diffusion coefficients an~ the. expected dl.rectlo~ .~
change in D with increasing pressure for (a) vacancy dllfuslOn and (b) lOterstltl<l1
diffusion.
Suggested Reading
14.3.
3.
t~ken
14.7.
YF,
CaO
NaF
and discuss the mechanism for each case.
The force of interaction between a pair of parallel dislocation lines on adjac,ent slip
'ven by l
'Y = Ob!l
1
. g
panes
IS
, where 1 is the spacing between lines. . lf ad slip..band
.
widens by a multiple-cross-glide mechanism, how would the dislocatlOn ensltles m
slip bands in dilferent crystals change with the yield stress of the crystals? .
it
14.9.
Problems
14.1.
For CaF" give the (1) crystal structure, (2) c1eavage plan~, (3) primary slip.plane, (~)
Burger's vector, (5) dominant lattice defect type, and (6) lOftuence on pias tic ftow, at
1200C by additions of:
(a)
(b)
(e)
Sapphire rods are readily available with the e axis for~ing a 30 angle. with the rod
. ( ) The critical resolved shear stress is what fractlOn of the applied stress for
aXIs.
. o f sapp h'Ire very tem perature
plasticadeformation? (b) Why is plastic deformatlOn
dependent?
The steady-state creep rate of aluminum oxide has been tested at 1750C~6I.t h;~s been
14.4. observed that a polycrystalline material creeps at arate of 3 x 10 l.n./lO. sec,
whereas the rate for a single crystal is 8 x 10-10 in./in. se.c. Why the dlfference?
Would you expect the activation energy to be the same or dllferent for two forms of
AI,O,? Why?
.
The viscosity of SiO, glass is 10" P at 1000C and lO" at 1400C. What IS ~he
14.5 activation energy for viscous 1I0w of SiO, glass? These data were
at constant
pressure. Would you expect a difference in the activation energy If the data were
obtained at constant volume? Why?
.
14.6. (a) What are the essential similarities and dilferences in the plastic deformatlOn of
metals, ionic solids, and covalent solids?
, .
.
(b) Assuming hardness characteristics are related to ?Iastlclt~ as well as bond
strength, would you predict a hexagonal modificatlOn of SIC to be harder or
softer than a cubic modification? Why?
4.
'7.
767
14.10.
Compare the high-temperature creep behavior of (a) glass, (b) single-crystal AhO"
and (e) fine-grain polycrystalline AI,O" explaining any differences in deformation
mechanism. IIIustrate with curves of deformation versus time and stress versus
deformation rate for each material~ow would grain size alfect the behavior of the
polycrystalline alumina?J
formation.
..
bT b t
Explain how it is that glass fibers can be formed in spite of thls lOsta lIt Y u
metal fibers cannot.
~--~----~---~~-~----
--_.__..
_.
15
Elasticity,
Anelasticity, and
Strength
One of the main reasons why ceramics are not used more widely is the
fact that they fail with "glasslike" brittle fracture. They do not normally
exhibit appreciable plastic deformation, as discussed in Chapter 14, and
their impact resistance is low. The use of ceramics for many applications
is limited by these relatively poor mechanical properties. Alumina porcelains, for example, are widely used as dielectric materials. Their choice
is often dictated, not by their electrical superiority, but by the fact that
they are mechanically stronger than other available materials. ConsequentIy they can be used in automatic machinery without as much
chipping or breakage as possible competitors would be subject too
Similarly, even though the high-temperature creep strength and deformation properties of ceramics are the best available, their poor impaci
resistance limits their use in jet engines, where one impact failure is
catastrophic. Many similar examples can be cited.
At the same time, the difference between actual strength levels commonly obtained and the potential theoretical strength, which has been
demonstrated in several cases, is as great or greater for fracture characteristics as for any other property. ConsequentIy, this is a particularly
attractive area for future developments.
.
15.1
Introducton
1
j
768
769
INTRODUCTION TO CERAMICS
770
Ductile fracture
Torsional test
8rittle
fracture
771
E
J.L = 20 - 1
(15.4)
Ductile fracture
Tensile test
t
Vl
Vl
::'
U5
,~--Nominal tensile
----"--.
stre ngth
P
P
P P
-+
J.L-+ J.L- = - (2J.L-1)
E
E
E E
11 V = 3E
= BE
(J"
(15.1)
where (J" is the normal (tensile) stress, B is Young's modulus, and E is the
normal strain. Similarly, the shear stress 'T is directly proportional to the
shear strain y:
'T
= Oy
(15.2)
J.L
I1d/d
M/I
(15.5)
Strain ------
Fig. IS.1.
= -
3P (2J.L - 1)
-P
K
11 V/V
E
=
3(1-2J.L)
(15.7)
The stresses and strains corresponding to these relationships are iIlustrated in Fig. 15.2.
Anelasticity. In a number of applications, such as glass-forming liquids in the vicinity of the glass transition and polycrystalline materials at
high temperature, the elastic moduli cannot be taken as constant but
exhibit a significant dependence on time. This behavior is termed anelastic or viscoelastic and characterizes deformation which is recoverable,
but not instantaneously, after removal of a stress.
Anelastic behavior is frequently represented by mechanical models
consisting of arrays of elastic springs and viscous dash pots, an example
of which is shown in Fig. 15.3a. The response of such a model to stress is
described by
(15.8)
(15.3)
For plastic flow, viscous flow, and creep, the volume remains constant so
that J.L = 0.5. For elastic deformation Poisson's ratio is found to vary
between 0.2 and 0.3, with most materials having values of approximately
0.2 to 0.25. Poisson's ratio relates th~ modulus of elasticity and modulus
(15.6)
'TR
is given by
(15.9)
772
INTRODUCTION TO CERAMICS
773
(J
~f/2
Force
I
I
, - - - - - - r - - r__ T
I
I
I
(a)
~-Jl(t)(f)
I
I
I
I
I
I
-.J
(b)
(J
(a)
p
------,
,-----1----, I
I
I
Time
(b)
p
(e)
Fig. 15.2. Definitions of elastic constants. (a) Young's modulus; (b) shear modulus; (e) bulk
modulus.
15.2
Elastic Moduli
For a constant stress (J'o applied over a time interval lo and then released,
the resulting strain should have the time dependence shown in Fig. 15.3b.
This model is known as the standard linear solid and is generally
attributed to Zener. *
For such a solid, the relaxed modulus is the ratio of stress to the total
deformation after a long time; the instantaneous deformation on application of stress defines the unrelaxed modulus, Bu = (J'o/ Eo. If periods of
time that are short compared with the relaxation time are used (high
frequencies), the measured modulus is the unrelaxed modulus, since there
*C. Zener, E/asticity and Anelasticity of Meta/s, The University of Chicago Press,
Chicago, 1948.
I
774
G L = 0 , + 1/(02 - 0
problem requires specification of the mutual interaction of many secondphase inclusions. Such a treatment has not been effected, but a number of
upper and lower bounds on the elastic moduli have been evaluated. The
widest possible bounds are found by assuming that the material consists
of layers either parallel or perpendicular to an applied uniaxial stress. The
first (Voigt) model assumes that the strain in each constituent is the same,
whence
the Young's modulus E u of the composite becomes
,
(15.10)
V 2 (1- V 2 )
E2 E,
,+ 1/{K 2 -
V2
K,) + [3(1- V 2 )]/{3K, + 40 ,)
(15.11)
(15.16)
(15.12)
(15.13)
)
1
(15.15)
Again, similar relations may be written for the other moduli. The
designations E u and EL indicate, respectively, the upper and lower
'bounds on the elastic moduli.
Z. Hashin and S. Shtrikman* have determined upper and lower bounds
for the moduli which are considerably narrower than the aboye extremes
and did not include any special assumptions regarding the phase
geometry. In the case of the bulk modulus, it was demonstrated that the
bounds were the most restrictive that could be given in terms of only
volume fraction and phase moduli. This was interpreted as meaning that
the bulk modulus is indeterminate exactly, as long as only such information is available. It was considered that exact solutions could be obtained
only when further factors, such as the statistical details of the phase
distribution, were evaluated. It was recognized, howevcr, that such
information was rarely available, and even if available, its application
would be generally uncertain. Hashin and Shtrikman's expressions were,
for K 2>K, and 02>0,
K
V2
. 1- V 2
77S
INTRODUCTION TO CERAMICS
l.
.?"
----------------lIIiIf'..
r.t. .IOiiSSilHSilililSilllIIlSi~lIIiiSIi
?lill
t
1i1i'
0.8
'<l
I
"
~ 0.6
'<l
'<l
I
~
E
'"
.....I 0.4
0.2
02
0.4
06
OB
LO
Fig: ISA. C?mparison of observed with predicted variations of Young's modulus with
volume fractlo~ of second-phase material. From R. R: Shaw and D. R. Uhlman J
NOII-Cryst SOllds, 5, 237 (1971).
n, .
Table 15.1.
LO . - - - - r - - - - - - - - , - - - - , . - - - - - ,
Elastic modulus
o Rigidity modulus
:;
E 0.6
:;;
<U
Qj
ro
MacKenzie
.~ 0.4
l.L
0.2
Fi~. 15.5. Relative eJastic moduli of alu mina versus porosity. From R. L. Coble and W. D.
KlOgery, J. Am. Ceram. Soc., 29, 377 (1956).
;
776
777
E (psi)
X 10 6
X 10 6
X 10 6
X 10 6
X 10 6
X 10 6
X 10 6
X 10 6
X 10 6
X 106
68
X 106
45 X 10 6
22 X 10 6
10.5 X 106
10.5 X 10 6
10 X 10 6
10 X 106
10 X 106
14 X 10 6
25 X 10 fi
50 X 106
55
53
53
45
12
42
1.3
30.5
59
34.5
778
15.3 Anelasticity
For anelastic deformation there are two limits for the elastic modulus.
does not have an opportunity to occur, and the initial ratio between stress
and strain, called the unrelaxed modulus, is measured. However, if the
load is applied and the strain is measured at very long times, the relaxed
,modulus will be determined. Since the long-time strain is larger than the
instantaneous strain, the relaxed modulus is smaller than the unrelaxed
modulus.
Experimental data on mechanical relaxation are usually not well
described by the standard linear solid. Rather than a single relaxation time
TR, distributions,of relaxation times are required to represent the results.
Studies of stress relaxation are, for example, generally described by a
time-dependent modulus of the form
= EEQ + L~
H(TR) ex p ( -
~) d
In TR
D(t) =
the strain is
(15.21)
Since sin (wt - 8) = sin wt cos 8 - cos wt sin 8, the strain is seen to
consist of two components: one, of magnitude uo/ Ecos 8, in phase with
the stress; and one, of magnitude uo/ E sin 8, 90 out of phase with the
stress. In terms of a complex complian~e
..!- = D * = D, - iD 2
(15.19)
The respective distribution functions can be obtained from experimental data on creep or stress relaxation, and the results from one type of
study can be used to predict behavior under other experimental conditions (see discussion in reference 1). Relaxation data can also be
described in terms of distributions of activation energies, and under many
~ondi.tio~s t~ese activation-energy spectra can be related to correspondIOg dlstnbutlOns of relaxation times. *
In addition to investigating creep and stress relaxation studies of
anelastic, behavior are frequently carried out with a periodi~ stress or a
peri.odic strain. A periodic experiment at frequency w is qualitatively
eqUlvalent to a transient experiment at time t = l/w. When a periodic
*See, for example, R. M. KimmeI and D. R. Uhlmann, J. Appl. Phys., 40, 4254 (1969).
(15.22)
Ua
(15.18)
(15.20)
= Uo sin wt
E(t)
779
INTRODUCTION TO CERAMICS
where D, = l/E cos 8, D 2 = l/E sin 8, and tan 8 = D 2 /D , . The real part of
the compliance DI is proportional to the energy stored in the specimen
due to the applied stress and is called the storage compliance. The
imaginary part of the compliance D 2 is termed the loss compliance, since
it is proportional to the energy loss. This may be seen from the energy
dissipation per cycle:
tiU =
or
dE = -
ti U =
7T
Uo-
."
SIn u
7TUo
8) sin wt dwt
D 2
(15.23)
(15.24)
a complex modulus:
E* = El + iE 2
(15.25)
(15.26)
ro
-00
H(TR)w2TR2dl
l+w2TR2
nTR
(15.27)
780
INTRODUCTION TO CERAMICS
tt
781
Elastic modulus
El
",-o
u =
:J . -
.---_ u
u .
:J '"
3 -00.
'-o'"
27T
V3
w =
27TQ-1
(15.32)
Wo
~Eu
~.~
o.
where w is the half-width of the resonant peak and Q-I is termed the Q
of the system.
Various processes can lead to anelastic deformation. In silicate glasses
containing only a single type of alkali, two loss peaks are observed at
temperatures below the glass-transformation range. These are illustrated
by the data in Fig. 15.7 for a NazO3SiO z glass. The peak at - 32C is du~
to the stress-induced motion of the alkali ions and is termed the alkah
peak. The smaller loss maximum at 182C has been associated with the
presence of nonbridging (singly bonded) oxygen ions and is termed the
NBO peak. Each loss peak is accompanied by a relaxa~ion of the sh~ar
modulus and is superimposed on a general decrease In modulus wth
Vl
~E
w'"
0.001
0.01
0.1
1
Frequency,
Fig. 15.6.
10
100
1000
TW
and
(15.28)
,---.-------,--,--,---r--,2.6
Similar expressions may be written for the storage and loss compliances
(see reference 1).
In dynamic experiments, tan 8 is widely used as a measure of the
energy dissipation per cycle, since
30
00>
u
=
27T tan 8
(15.29)
=ln~
An
+,
'"S
2.3
...x
I
Q'
20
c::
:p
:E
'"
E
QJ
:;
-o
o
Vl
:J
e
(15.30)
!t
......-o
I
2.0 E
10
'"
QJ
..c::
en
and hence
= 7T tan 8.
OL::=:L-_-L_--L-,------:-:-:--:--::-:-::_-:-:::::;----;:; 1. 7
- 200 -100
O
100
200
300
500
Temperature (OC)
(15.31b)
782
INTRODUCTION TO CERAMICS
783
10
9
18
'" 8
16
~x
r
Q'
106
0.0
14
.x
ro
12
10
'"o~
Q)
a.
:j4
1f
-E
'
oC
15.4
Vl
8 ::
.x
4
2
30
Fig. 15.8. Height of alkali loss peak and Na diffusion coefficient at 415C in sodium silicate
glasses. From D. E. Day in Amorplzous Materia/s, John Wiley & Sons, Inc., New York, 1972.
I
!
1
~
~
l'
*~ee D. E. Day in Amorphous Matera/s, John Wiley & Sons, Inc., New York, 1972, for
'
revlew and references.
. (21TX)
= O"h sIn
-A-
(I5.33)
The work per unit area to separate the two planes of atoms is then
)
(
784
INTRODUCTION TO CERAMICS
(J
(Jth
Such strengths have been obtained only with thin fibers of fused silica and
whiskers of crystalline oxides such as Alz0 3 Por most commercial
bodies, strengths in the range of E/lOO to E/I000 or less are typically
observed. Por example, the strengths ofwindow glass are generalIy in the
range of 104 psi (E/lOOO); strengths of high-alumina porcelains are
typicalIy about 5 x 104 psi (again about E/IOOO).
Griffith-Orowan-Irwin Analysis. To explain this marked discrepancy
between the theoretical and actual strengths of materials, use is generalIy
made of the suggestion of Griffith* that flaws in the materials can act as
"'\I~tress concentrators and that the separation of surfaces in fracture takes._
'-place, sequ.entially rather than simultaneouslyacross the cr~~,~ee~?~i,~
Prom thls concept, two approaches have been folIowed. The first, due
initially to Griffith, is based on the suggestion that a crack propagates
when the decrease in stored elastic energy associated with its extension
exceeds the increase in surface energy associated with the formation of
new surfaces. Por elliptical cracks of major axis 2e .in a thin plate, this
condition may be expressed
------- -----(J
'\
\
\
\
\
\
\
A/2
....
(A/2
Jo
a'h sin
(2 : X) dX = JI.;'h
(15.34)
This work .m.ay be equated with the surface energy 2"1 of the two new
surfaces, glvmg
a'h =
27T"I
-!i
(7Te a
de
E
(15.35)
Por the initial part of the curve near the equilibrium spacing, ao, Hooke's
law may be expressed
X
a = E ao
(15.36)
where E is Young's modulus. Por this small X part of the curve, one
obtains from Eq. 15.33
da ---cos
_ 27Ta'h
(27TX)
27Ta'h
- - ""'-dX
JI.
JI.
JI.
or
(15.37)
-!i
(4 e)
de "1
(15.41)
(15.42)
a..
(15.38)
(15.39)
(15.40)
e)1/2
2a ( p
(15.43)
where p is the radius of the crack tipo On this basis, failure would be
expected when the stress at the crack tip exceeds the theoretical strength .
of the material; that is, when a.. = a'h'
It was noted by Orowan:j: that the minimum radius of curvature at the
tip of a crack is of the order of a magnitude of the interatomic spacing ao.
If p in Eq. 15.43 is replaced by ao, the condition for failure becomes
E
E
a'h""'S to 10
785
_ (E"I)1/2
4e
a -
,
I
(15.44)
786
787
INTRODUCTION TO CERAMICS
Por materials which are not completely brittle, or nearly so, 'Yp is
generally much larger than 'Y and dominates the fracture process.
.Irwint considered the crack-extension force G for the case in which a
load P is applied to a plate with a crack of length 2c:
2
d(1/m)
(15.46)
dc
'TTCa
(15.47)
_ (EGc)1/2
af- - -
(15.48)
'TTC
* Rep.
= a(Yc)l/2
(15.50)
where ay is the yield stress of the material. This relation should provide a
useful estimate for most ceramics, since their yield stresses generally
exceed the stresses required for fracture.
Statistical Nature of Strength. An important consequence of the
theory that brittle fracture is initiated at Griffith flaws is that the fracture
strength of a brittle solid is statistical in nature, depending on the
probability that a flaw capable of initiating fracture at a specific applied
stress is present. This is the main explanation of the scatter of results
normally found for the strength of ceramic materials. A corollary of the
statistical nature of the flaws present is that the observed strength is
related in sorne way to the volume of material under stress or the surface
area of material under stress. Consequently, observed strengths vary with
the manner in which tests are conducted. It is found in practice that the
fracture stress of a brittle material is not so high when tested with a tensile
specimen having a large surface area and volume under the maximum
stress as when tested in a bend test in which the stresses decrease from a
maximum at the surface to zero at the neutral axis. In the bend specimen
the area under maximum stress and a volume under stress are smaller,
and consequently higher strength values are observed.
There have been various attempts to develop a statistical theory for the
strength of brittle solids. These all involve an assumption about the
number of dangerous flaws related to the specimen volume or surface
area. Direct observations of flaws that are likely to cause fracture suggest
that this relationship changes from one material to another and probably
depends on the fabrication method and oil treatment after fabrication.
Consequently, no generalized statistical strength theory can be expected
to hold for all materials. The best known of these statistical theories was
developed by W. Weibull.t He assumed that the risk of rupture is
(15.45)
G= p
=i(~~cr
(15.49)
-----..~-----------~_
788
INTRODUCTION TO CERAMICS
fu f(a-) dv
---_. __ ..-
.. ~_..
_.
proportional to a function of the stress and the volume of the body. That
IS,
R
..
789
140
130
120
(15.51)
110
(:J"
100
.:;
o-
>.
u
(15.52)
'"rr
70
60
'"
ro
ID
50
Cl::
40
30
20
10
oL-..L.-L~-.-L~:::--L;;-!-:-...JL.,~~~-;L-~~~~--'-~4
o 0.02
0.14
0.18
0.22
Relative fracture stress 13
:::J
.~
(15.53)
(l9~7),
80
c:
90 .
*J.
791
";;
4i
c.
~
0==
~~
t"
c~
~~
-"''''..
:!!
]
al
co'"
...
01l
'"<Xi
b"
".
:<!;
'<j'
aJnpeJj
O
O
O
JO IiJuanbaJ;:j
L{)
Table 15.2.
_"!
Matcrial
CO
O "'E
E
-"<t;i,
06
b
O
'----;:;;--'<j'::-~~~!::----=L-l,-----.l_--J
O
~
aJnpeJj
JO IiJuanbaJ;:j
790
Modulus of
Rupturc (psi)
792
INTRODUCTION TO CERAMICS
surfaces with one's finger can reduce the strength from the 105 to the 104 psi
range. Etching the surface of a damaged body, as with HF for glasses, often
restores the original strength. Such a restoration is shown by the data in
Table 15.3 for 0.25-in.-diameter glass rods tested for 60-min periods.
Table 15.3.
Surface Treatment
Strength (psi)
6500
2000
250,000
Fig.15.12. S ketch illustrating dislocation pile-up and crack formation at interseetion of two
slip bands.
* Phys.
793
...
j
795
INTRODUCTION TO CERAMICS
Once ~icr~cracks ar~ formed, the stress fields at their tips induce plastic
deformatlOn In the adJacent grain if the material is ductile' and crack
growth is slow, since the stress field can be relieved by plastic ftow. For
semibrittle materials, or in general when ftow can take place only at high
str~ss.levels, stress builds up at the grain boundary until the strength of the
~ohd IS ex~eeded, and fracture takes place. Assuming the slip-band length
.IS proporhonal to the grain size d, the fracture stress for this case may be
expressed
15 kpsi
:t
(15.54)
where
_ (37TYE)'/2
k,1- jJ2
(15.55)
Equation 15.54 has the form of the Petch relation and predicts that the
strength should increase with decreasing grain size (as d- I / 2 ) of the
polycrystalline array. In cases in which the sizes of the initial ftaws are
limited by the grains and scale with the grain size and in which brittle
behavior is observed, the strength should vary with grain size as
(15.54a)
Equation 15.54a is known as the Orowan relation.
. An. alternative mechanism for crack initiation in polycrystalline
ceramlcs focuses attention on the internal stresses which occur due to
~nisotropic thermal contraction. In the analysis by F. J. P. Clarke,* fracture
IS assum~d to initiate at grain-boundary pores and propagate along the grain
boundanes, and when the pores are much smaller than the grain size,
spontaneous fracture is expected when
105
Fig. 15.13. Strength versus grain size relation for polycrystalline AI,O,. From S. C.
Carniglia, J. Am. Ceram. Soc., 55, 243 (1972).
(15.56)
strength with average grain size must reftect processing techniques which
produce samples in which the size of the most severe ftaw scales with the
average grain size. In engineering practice, the most severe ftaws in a body
are usually associated with porosity, surface damage, abnormal grains, or
foreign inclusions, and care is often taken to minimize the size of the most
severe ftaw and ensure that it is close to the average f1aw size.
The differences in strength behavior among the different types of
ceramic materials can be viewed with a different emphasis. Once a crack
has been initiated in brittle materials such as glasses and many ceramic
single crystals, the stress conditions are such that the crack begins to
propagate. There is no large energy-absorbing process comparable with the
pIastic deformation of ductile materials. Consequently, there is no
mechanism by which the applied stress is limited, and the crack continues
796
INTRODUCTION TO CERAMICS
ELASTICITY, ANELASTICITY, AND STRENGTH
to complete failure in a uniform stress field. That is, the initiation of cracks i
is the critical stage of the rupture process.
In polycrystalline ceramics, obstacles such as grain boundaries can
hinder crack propagation and prevent fracture of the body. The in crease in
stress for a crack to change direction at a boundary has been analyzed by
M. Gell and E. Smith,* for typical polycrystalline arrays; increases of
factors of 2 to 4 are anticipa,ted.
For materials of high toughness such as metal-bonded carbide cutting
tools, new cracks must be nucleated as the fracture passes each phase
boundary; the ductile behavior of the metal phase provides a mechanism
for energy absorption that requires increased stresses to keep a crack
moving. U nder these conditions the material does nt fracture even when
stresses exceed the crack nucleation leve!. A sufficiently high stress level to
provide for crack propagation must be exceeded before failure occurs.
The concepts of brittleness and ductility are also reflected in the fracture
surface energies (y + Yp in Eq. 15.45) derived from studies of controlled
crack propagation. Such studies of a number of silicate glasses have been
carried out by S. M. Wiederhorn. t Values in the range of 3500 to
z
4700 ergs/cm were found in tests carried out at 300 oK; at 77K the values
ranged from 4100 to 5200 ergs/cm z. For comparison, the energy represented by zthe formation of the new surfaces is estimated as about
1700 ergs/cm . These results indicate that glasses are nearly ideally brittle
materials. The difference between the measured fracture energies and the
estimated surface energies very likely reflects viscous deformation processes taking place in the vicinity of the crack tipo Sorne such deformation may
be anticipated even for glasses tested well below their glass transition
temperatures, since the stresses in the region ahead of the crack tip well
exceed the critical stress for non-Newtonian flow (see Section 14.7). The
extent of the plastic (viscous) zone is, however, quite small-in the range of
6 t9 26 A, according to Wiederhorn's estimates.
In the case of single crystals, the fracture process depends on the
crystallographic orientation of the fracture plane and takes place preferentially along those planes having the lowest fracture surface energies. In
many cases, this leads to a cleavage type of fracture occurring on a single
crystallographic plane with much lower fracture surface energy than other
planes in the crysta!. Fracture surface energies of various single crystals
are shown in Table 15.4. With the exception of AlzO], all the data reflect
c1eavage fracture and indicate fracture energies which exceed the expected
surface energies by factors which are similar to, or perhaps slightly larger
than, those found for silicate glasses.
*Acta Met.,
Table 15.4.
797
Crystal
Mica, vacuum, 298K
Lif, N 2(l), 77K
MgO, N 2(l), 77K
CaF2, N 2(l), 77K
BaF2l N 2(l), 77K
CaCO], N 2(l), 77K
Si, Nll); 77K
NaCl, Nll), 77K
Sapphire, (lOTl)plane,
Sapphire, (loTO) plane,
Sapphire, (1123) plane,
Sapphire, (loT 1) plane,
Sapphire, (2243) plane,
Sapphire, (1123) plane,
4500
400
1500
500
298K
298K
77K
77K
77K
293K
300
300
1800
300
6000
7300
32,000
24,000
16,000
24,000
tO~
798
INTRODUCTION TO CERAMICS
2.0
Porcelain
(dry)
1.5
Sodalime
glass (wet>
Lead glass
(weV
Pyrex (dry)
Fused si/ica
(weV
0.5
.0:11-~-~-~-~:;--;-1O~0;-;;0-:-:10:-!.0:-:-0-0-L_L~
799
I
I
Uf
0.8
b
~ 0.6
log t =-+B
:<;
b
10 sec
(1S.S7)
Vi
.~
l t'
where t is the time to failure and A and B are constants Th'
cann t b
rd'
.
IS re a IOn
o lel vha I at very short times but provides a useful description over
near ly a t e range of the data.
.AIthough ceramic materials such as the glasses cited in Fig IS 14
wlthstand a given stress for a short period of tl'me lowe' 't can
.
,
r s resses
eul"Ima telyIead .to f rac~ur~ Jf. apphed
for a sufficientIy long period of time
. onsequentIy, In speclfYIng the strength of a ceramic material and fi . .
~~ USt con?itions, we ~ust know the. rate of load application ~r the ~~;
e s ress JS to be apphed as weIJ a~ other factors.
ro
Qj
0.4
Room temperature"'
o::
100 sec
0.2
--*'---- B Ti-----4-<>--O
200
300
400
500
600
700
800
900
Temperature (OKl
Fig. 15.15. Relative strength of gIass tested in air versus temperature for load s of various
durations. Semiquantitative composite curves from results of various investigators. From R.
E. Mould, Glastech. Ber., 32, 18 (1959).
800
INTRODUCTION TO CERAMICS
-~---r-__r-___,--,-----,
22
6.-----,--------.----.--'--.
20
Symbol Abrasion
18
A
2.3R
16
A=
ID
<D
'"o
18.8 kcal/mole
-10C
-; 14 -
:g 12
-'=
bo
10
Vi
8.
O)
1-
-1
-2'-2.0
-'3.0
-'4.0
--'
5.0
1000/T('K)
Fig. 15.16. Temperature dependence of the time to failure of sode-lime-silica rods in bending
test. From R. J. Charles in Progress in Ceramic Science, Vol. 1, Pergamon Press, New York,
1%1.
4
10- 1 1
10
10 2
10
10 3
load duration (sec)
T t
lass specimens with various
Fig 15 17 Static fatigue curves for so da- lIme-Sllca e g
h . k J A
.
..
. .. d H O F
R E Mould and R. D. Sout WIC , m.
abrasions, tested immersed In dlstille
2'
rom . .
.
Ceram. Soc., 42, 582 (1959).
10-3
0.9
10-2
Symbol Abrasion
e
lO
c
d
0.6
.?
b'
e
f
0.5
0.4
0.3
0.2
0.1
~4L~--h--+-~0--I\-----;2--1----S-E6
loglO (1/10.5)
h t'
'th' glven abraslOn treatment or t e
Fig.15.17.(J";"isthestrength.at77K;to.,ls~ e Iml~> .. ~,.:: k ...
strength to fall to a half of 1tS value at 77
~~I~j\
'<\
802
INTRODUCTION TO CERAMICS
100%
OE
0,7
DE
O~
Applied force (kg)
1,1
Fig. 15.19. Dependence of crack velocity on applicd force for soda-lime-silicate glass. The
percentage o relative humidity is given on the right-hand side of the diagram, and the Roman
numerals indicate the three regions o crack propagation. From S. M. Wiederhorn, J. Am.
(
In this region, the velocity is apparently Iimited by the transport of water
vapor to the crack tipo In regio n 111, the crack velocity is strongly dependent
on K but independent of the environment. At constant K, the crack
velocity in this region is found to depend on temperature and glass
composition, as shown in Fig. 15.19.
The plot in Fig. 15.19 was made to test the predictions of the
stress-corrosion model, which indicates that the crack velocity should vary
exponentially with stress-intensity factor, as
803
V = V oexp
(-E'+bK)
RT
(15.58)
805
INTRODUCTION TO CERAMICS
Table 15.5.
V=AK/
(15.59)
Compressive (e) or Transverse (tr) Strengths under Conditions Indieated with a Maehine-Loading Rate of 0.005 in./min
-195C
240C
22,000
65,700
37,400
95,200
81,600
30,500
152,000
64,500
19,700
57,300
63,800
26,600
116,500
36,600
6010
45,700
35,800
8000
68,300
11,000
55,600
23,500
38,500
52,200
14,200
110,000
V av = gAK7 v
R
where
g =
11
1/"
[a(t )]n
-0'0
dt
(15.61)
where V"<llie is the value obtained from Eq. 15.59 with K 1 taken as K 1Rv '
Values of g for different values of n have been given by Evans and
806
INTRODUCTION TO CERAMICS
Up
(Yc )112
< KIc
(15.63)
Knowing this upper limit to the size of cracks which can be present in
specimens surviving the proof test and knowing the crack-propagation
velocity as a function of stress-intensity factor for the material, one can
then in principie guarantee a minimum service life under given stress
conditions for all samples. Use of this approach depends on factors such
as ensuring (1) that additional damage does not occur to the body during
. subsequent handling, (2) that the conditions of the proof test approximate to the conditions of use, (3) that the in-service stress
conditions for the bodies can be estimated, (4) that the crack velocity
versus K 1 relation is available for similar stress conditions as expected
during use, (5) that account is taken of slow crack growth which occurs
during unloading after the proof test, and so on. Although these factors
may limit the widespread use of the technique, it does seem to offer new
pro mise for ensuring the integrity of ceramic bodies when sufficient
information is available on the materials and in-service conditions.
Considerations such as these seem likely to receive increasing attention
in coming years, as structural engineers turo more to ceramic materials to
withstand harsh environments. Because of their outstanding resistance to
corrosion and high temperatures, ceramics will increasingly be used in
structuralload-bearing applications, in which the probability of failure is a
critical design parameter. For such critical applications, great pressure
will be placed on the ceramics engineer to provide materials whose failure
characteristics are better known and understood.
* Met.
Trans., 5, 27 (1974).
807
808
INTRODUCTION TO CERAMICS
809
Fig. 15.21. Fracture path in a sample of thermal1y cracked po1ycrystalline aluminum oxide.
Courtesy R. L. Coble.
Fig. 15.20. .Microstructure of initial1y dense Al,O, which has been deformed at high
temperature In a bend test. Pores appear on tensile (top) side of specimen (lOOx). Courtesy R.
L. Coble.
15.8
Effects of Microstructure
0'0
exp (- IlP)
(15.64)
36, 65 (1953).
l-
811
1.0 r-----r-......- - r - - - , - - - - , - - - , - - - ,
Ryschkewtch
Iron, Goetzel
o Stanless steel
o Plaster of Pars
..
0.8
~ 0.6
c:
~
1il
Q
>
".
1;
I (a)
.,
~/~
..
~ 0.4
a::
0.2
<
"
Fig.. 15.22. Grain-boundary fracture path in large-grain high-density AI,O,. (a) Polished
sectlOn (l58x); (h) transmitted 1ight (l50x). Courtesy R. L. Coble.
810
0 0'---1.----'-:---'---'--'----1---'
0.1
0.6
0.7
One place where pores can be helpful rather than harmful is in the case
of a high-stress gradient. For example, under stresses such as those
induced by thermal shock, discussed in Chapter 16, pores tend to hinder
crack propagation so that surface checking is obtained rather than
complete fracture. This occurs because the stress drops off very rapidly
from a high value at the surface to a low value in the interior.
The simplest kind of two-phase system is glazed ceramics. In this case,
the glaze is usualIy weaker than the underlying body; also, fracture is
normalIy observed to start on the surface. ConsequentIy, higher strengths
are found with a glaze that has a lower thermal expansion coefficient than
the body; this places the glaze under a compressive stress when the glaze
body composite is cooled. Initial and final stress distributions in a bend
specimen are as shown in Fig. 15.24. The tensile stresses in the body are
smalI compared with the compressive stresses in the glaze so that
substantial strengthening can normalIy be obtained in this way. In sorne
cases fracture initiates at the glaze-body interface, particularly when an
increased tensile stress is placed on the body by the glaze expansion and
high glaze compression prevents fracture from starting at the surface.
ConsequentIy, excessive glaze compression is not desirable.
In multiphase systems various aspects can predominate, depending on
the kind of fracture observed. The most common feature affecting
812
813
INTRODUCTION TO CERAMICS
"-
"-
- - - Compression
Tension~
Problems
Fig. 15.24.
Stresses in glaze and body after cooling and with an applied bending stress.
15.1.
15.3.
15.4.
decreases. Explain.
Fracture in polycrystalline MgO occurs at a stress leve! approximately equal to the
yield stress determined in single crystals. Give several mechanisms by which crack
nucleation may, or has been reported to, occur in polycrystalline MgO. Are grain
boundaries intrinsically weaker or stronger than the individual crystals of the
polycrystalline mass? Discuss, covering all terms of an appropriate theoretical
strength model.
G1ass fibers, 20 microns in diameter by 100 cm long, are loaded with a weight of
100 g in lab air.
(a) What elongation rate would you expect at a viscosity level of 10" P?
(b) lf the fibers fractured during the test, Griffith f1aws of what size would be
indicated?
lf the test were conducted in vacuum, what breaking stress might be expected
(for the same "worst" f1aws)?
(d) lf you were an engineer, would you design products around such strength
(e)
15'.5.
~'
3.
4.
814
INTRODUCTION TO CERAMICS
Glass containers are presently fabricated from soda-lime-silicate glasses. Why are
these compositions used? What is a typical range of composition? What is the
structural effect of the small AI,O, additions used? Why are they used? How might
these compositions be strengthened? How might soda-alumina-silicate glasses be
easier to strengthen? Why? Why are soda-lime-silicate glasses preferred for the
container application?
15.9. Define work of fracture.
15.10. A series of glass rods of circular cross section (1/4 in. diameter) fracture at an
average stress of 10,000 psi when bent. Assuming the modulus of elasticity is lO' psi,
poisson's ratio is 0.3, surface tension is 300 ergs/cm" and the fictive temperature is
625C:
(a) What is the average depth of the Griffith flaw?
(h) It is desired to coat this rod with another glass of different coefficient of
thermal expansion but of essentially the same physical properties in order to
double-the average strength of the rods. Should the new glass have a higher or
lower coefficient than the parent rod? Is there a minimum depth or thickness to
the coating? If so, compute the thickness.
(e) For your minimum recommended thickness, compute the difference in coefficient of thermal expansion (linear) needed to double the strength of the rods.
(d) What will the tensile stress and compressive stress be in the various parts of
the coated rod?
15. t \. A set of samples of AI 2 0, doped with Cr 20, indicated that Cr2 0, did not affect the
strength but porosity did, although there was sorne scatter in the data.
15.8.
97.7
92.4
94.8
93.6
87.5
58.1
Number of
Bars Broken
Average
Modulus of
Rupture (psi)
24
25
19
32
32
23
33.4
29.5
3\.0
27.9
24.0
9.5
815
15.13.
(e)
these conditions the stresses are the same as if the sample were allowed to
expand freely and then compressed back to its original size by an applied
restraining force. The stress required is praportional to the elasticity of
the material and the elastic strain, which is equal to the product of the
thermal expansion and temperature change. For a perfectIy elastic rod
restrained in only one direction,
16
Thermal and
Compositional
Stresses
The susceptibility of ceramic materials to thermal stresses and thermal
shock failure is one of the main factors limiting their usefulness. For
mary high-temperature applications, for example, structural praperties
are satisfactory at the temperature at which the structure is used, but
failures often Occur at lower temperatures during heating and cooling.
Similar1y, the glass or teacup that cracks when suddenly heated or cooled
is familiar to us all. In addition, there are many applications in which
temperature changes result in stresses that are desirable or in which stress
relief resulting from temperature changes may be detrimenta1. All these
different situations are usually discussed as separate problems; here we
first consider the problem of temperature changes and resulting stresses
in a general way and only later consider specific applications.
Among these applications, two of particular interest are related to glass
technology. Annealing of glass objects used for structural or optical
purposes is primarily aimed at removing stresses. However, sometimes
desirable patterns of residual stresses can be used to improve glass
properties. Both applications invo1ve the same fundamentals as those
used in discussing thermal shock failures and are considered in the
present chapter. Also to be discussed are other techniques which may be
used to strengthen ceramic bodies.
16.1
817
= -
Ea (T' - To)
(16.1)
819
INTRODUCTION TO CERAMICS
boiling water at 1000 e into an ice bath at ooe. U nder these conditions the
rate of heat transfer from the surface is high; the surface reaches the
new temperature instantly, but the interior remains at a uniform value,
T o = 100. The surface, if free, would contract by an amount a (T o - T') =
looa; however, it is restrained by the bulk which remains at T o = 100,
and tensile stresses arise in the surface. For stress equilibrium the surface
stress must be balanced by a compressive stress in the interior.
, The overall size of the sample is determined by its average temperature
Ta The stress at any point depends on the difference in temperature
between that point and the average; this gives the strain at that point and
fixes the stress. The restraint on free strain is similar to that in Eq. 16.1 and
leads to a stress in an infinite slab given by
t~re is lower than the average temperature, and surface tensile stresses
818
cry
crz
Ea
-JL
-1- ( Ta
T)
(16.2)
Table 16.1.
For the plate plunged into ice water, the maximum stress at the surface
occurs at zero time when T a = 100, T s = O. For a typical soft glass,
E = 107 psi, a = 10 x 10-6 in./in. e, JL = 0.20, and cry = crz = 12,500 psi.
This is well aboye the fracture stress (about 10,000 psi), so that we would
expect soft glass to fracture under these conditions. In contrast, for Pyrex
,glass the expansion coefficient is about 3 x 10- 6 oe, so that this treatment
does not normal1y lead to failure but is a borderline case. For fused
quartz, a = 0.5 x 1Q-6oe, so that no dangerous stresses are developed.
In addition to sudden changes in temperature, a steady rate of temperature change can also lead to temperature gradients and thermal stresses
(Fig. 16.1). When the surfaces of a plate are cooled at a constant rate, a
temperature distribution results which is parabolic. The surface tempera-
Infinitc slab
Thin plate
Thin disk
.~
t':'
a.
E
'Vi
Ts
Uz
O'y
O'z
=O
0'.
aE(T" - '1's)
O'r
=O
(jO
-.L
O'r =
Long; hollow
eylindcl'
O'r
O'y
O'z
O'y
O'z
= O
(J x
= aE('P
Ea_
l - .L
Cl
(Tu -
1\)
'l'c)
(l
Long; solid
eylinclcl'
0'.
O' r -
_ (t
- .L)Ea (1' - ']' s )
1 - 2.L
0'0 -
t':'
a.
E
Ts
Ta
Te
= ()
Uo --
Te
o
'Vi
Solicl sphcl'c
1-
O'r
. _
O'Hollow sphcl'e
(b)
O'r
O'r
O
-
]<'
J~(']' a _1')
...
O't -
O'r -
O'r =
aE
O_' --
- ~"('1' - '1')
1 - .L"
.,
1-.L
O' -
,"
1 - .L
r'
Fig. 16.1. Temperature and stress distributions for p1ate that is (a) cooled from the surface
and (b) heated from the surface.
= ()
]<'
(5 ...
OJ
(a)
OJ
1-
=O
Uy
O'z
.~
Ccntcl'
SlII'faec
Shltpe
-,
-'-
,_ ..- - -
(7' a - ']' .. )
820
INTRODUCTION TO CERAMICS
821
(J
(16.4)
(J
= Ea (To - T')/(1- L)
0.7
(Js
Ea el>rm
1- L 3klpc p
(16.3)
.j\ 0.4
o::
Table 16.2. Temperature Differences between Surface and Center of Various Shapes Cooled at a Constant Rate (4) = dt /d(})
<1l
E
'O
:3
3
0.3
2
1.5
rp" _
Shape
thic:knc~~
1.0
_---+----0.5
cf>r m :!
k/pc Jl
0.0
T",
O.liD
T",
1',~
~:..-l..---.l---L-__:_--:-'----'--~
Nondimensional time
Fig. 16.2. Variation of nondimensional surface stress with dimensionless time for an
inlinite fiat plate with different values of Biot's modulus /3.
Tm
T".
(J;".x = 0.31{3
= 0.31 r'k h
(16.5)
nl
822
INTRODUCTION TO CERAMICS
Table 16.3.
Conditions
h
(Btu/hr/ft 2OF)
823
.
. . r 'd bath with rapid rates of heat
transfer, we have
For ImmerSlOn In a IqUl
E 162 d alling
~r~a~ f~:l~~~~~~~et~~~~~~~~r:~~~~r:;~::~~~n~em~~rat~rea~iff~rence
h
(ea l/s3e/em 2OC)
190
90
20
2
26.0
7.0
1000-10,000
35-150
6.T =o"(I-.t)
0.026
.012
.0027
.00027
.0035
.00095
.1-1.0
.005-0.02
(16.6)
Ea
. d'cat
For other shapes, as In
1
e d in Table 16 . 1, other geometrical constants
are required, so that in general
6.T
= O"(l- .t) 5 = R5
(16.7)
Ea
where 5 is a shape factor, O" is the fracture stress, an.d R =. 0"(1- .t)/Ea
is a material constant that can be described as a matenal r~sIsta~C~t facto~
for thermal stresses. High fracture stress, low mOddulu~ ~ elaSt~C~::r:al
low thermal expansion coefficient indicate a goo reSIS ance
stress failure on this criterion of failure.
.
.
l
It is worth noting that the relationship of Eq. 16.7 only appbes ~Ire~t ~
when the quench is so rapid that the surface tempera~ure reaches Its o~~
value before the average temperature changes. ThIS occurs to a g
. t'Ion w h e n f3 -- r m h /k is equal to or greater than 20. For
approxIma
O4 a glass
th t
16.3
apply.
Under conditions when t h e rate of heating is not so high, we can
combine Eqs. 16.4 and 16.5:
O"
(O"mux)- Ea(To- T')/(l- .t)
= 0.31
r",h
k
(16.8)
By recombining,
kO" (l - .t)
6. T =
1
Ea
1
0.31 rmh
(16.9)
k:~~~e:)i Ea, again with the failure criterion of fracture occurnng when
I
'5
1
0.31rm h
(16.10)
Here the material constant ineludes the thermal conductivity, and the
te
824
INTRODUCTION TO CERAMICS
s~~~r e~ are
--'--I--,---,--I-----,----,__~
3,000 _
TiC
Fused SiO,
Zircon
AI,O,
MgO
1,000 -Porcelain
Grass
e
...
"~
300-
100
Porcelain
Radialion
30 -"om 1000'C
JO/turbine blades'
-;:Fo-rc-ed.,..c-o-nv~ec-,-tjo-n-~
air f10w 2.5 Ib/sec/tI'
10
O.O~O:I-o:<~--io:,-oi3-(J7-----=f~-~::--__::_L--J
QI
Q3
10
rm h (cal/secOC/cm '/cm)
d"~
re
825
resistance about six times as good as indicated in Fig. 16.3, so that results
shown there should be regarded as illustrative rather than definitive.
An important feature of Fig. 16.3 is that the curves for a number of
materials cross. This occurs for magnesium oxide and porcelain, for
example, at a value of rmh = 0.03. For moderate rates of surface heat
transfer, magnesium oxide is better; for more rapid surface-heat-transfer
coefficients or larger sample sizes porcelain has better stress resistance.
Consequently, we cannot say that we are able to arrange a list of materials
in a single order of thermal stress resistance, even for a given criterion of
failure.
Other conditions of heat transfer are frequently encountered, such as
steady-state heat flow out through the walls of a hollow cylinder, constant
rate of heating from the surface, and cooling by radiation from an
elevated temperature. Each of these requires a different material constant
and leads to a different list of the relative advantages of different
materials. For these applications it is essential to understand the conditions of heat transfer.
All the aboye discussion has been predicated on the assumption that
failure occurs when the thermal stress reaches the fracture stress. Such
an approach directs attention to the conditions which govern the nucleation of fracture.For porous materials (such as most refractories) and for
nonhomogeneous materials (such as cermets), however, the large stress'
gradient and short stress duration mean that fracture, even though
initiated at the surface, may be stopped by a pore or grain boundary or
metal film before resulting in complete failure. The question "When is a
crack a failure?" cannot be answered unequivocally but depends on the
particular material and application. In a refractory, for example, whose
main function is as a high-temperature corrosion-resistant heat container,
surface cracks cause no difficulties, but it is desirable to avoid thermal
spalling-the actual breaking away of pieces of brick. as a result of
thermal stresses. For these materials increased porosity-(which decreases
both R and R " since the conductivity is decreased and the strength is
decreased to a greater extent than the elasticity) leads to better spalling
resistance, and a porosity of 10 to 20% is often optimum.
These considerations lead to a second approach to the problem oJ
thermal shock-treating the conditions which govern the propagation of
cracks rather than their nucleation. This approach has been advanced by
D. P. H. Hasselman, * who noted that the driving force for crack
propagation is provided by the elastic energy stored at the momentof
fracture. Considering further that crack propagation under conditions of
10,000
*,$"''',
10
*J. Am. Ceram. Soc., 52, 600 (1969), and Inl. J. Fract. Mech., 7, 157 (1971).
826
INTRODUCTION TO CERAMICS
until the released strain energy equals the total surface energy of fracture.
This condition is fulfilIed by the final crack lengths shown by the dotted
curves in Fig. 16.4. These final crack lengths are subcritical with respect
to the critical temperature difference required for their initiation, and a
finite increase in this temperature difference is required before the cracks
again become unstable. FinalIy, in contrast to short cracks which propagate with significant kinetic energy, cracks with initiallengths to the right
of the minima in Fig. 16.4 are expected to propagate in a quasi-static
fashion.
For a material with smalI cracks, which propagate kineticalIy on
initiation of fracture, the crack length is expected to change with severity
of quench, as shown schematicalIy in Fig. 16.5; the corresponding
variation of strength is shown schematicalIy in Fig. 16.6. For thermal
stresses less than that required to initiate fracture, no change in strength
or crack length is anticipated. At the critical stress for fracture, the cracks
propagate kineticalIy, their length changes rapidly to a new value, and the
strength shows a corresponding abrupt decrease. Since the cracks are
then subcritical, the temperature difference must be increased above that
required for fracture initiation, Ll Te, before the cracks again propagate,
and over the range between Ll Te and Ll Te', the range in which no further
crack propagation occurs, no change in strength is expected. For more
severe quenches (Ll T > Ll Te')' the cracks grow quasi-staticalIy, and the
strength correspondingly decreases. Curves of the form of Fig. 16.6 have
been observed in a number of studies of thermal shock damage. Figure
16.7, for example, shows results obtained on polycrystalIine Al203 sampies of various grain sizes.
+ 16(1- JL 2)NI 3 ]
/-
9(1 - 2JL)
112
(16.11)
3
S 10
lE
u
Regan af instability
No change
in crack length
Regian af stabilty
Kinetic crack
prapagatian
~~
10-1
../
/
/
/
827
l"
/~ Quasi-static
I
crack propagatian
//
/"
'----y---------/ I
No fracture
initiatian
I
I
I
I
I
I
I
10
(!l T)c
(!l T)c'
Temperature difference !lT
Fig. 16.4. Thermal strain required to initiate crack propagation as a function of crack
length and crack density N. Poisson's ratio taken as 0.25. From D. P. H. Hasselman J. Am.
'
Ceram. Soc., 52, 600 (1969).
828
INTRODUCTION TO CERAMICS
829
No change
in strength
So~
Instantaneous [
decrease
in strength
"
"
!;---~'.....
:'----..r--I
40
:No change:
:
In
40 (microns)
: strength :
I
O~
I
I
---:-:-=--_---:-:--,:::--:--
---'
10
(fJ.T)c
(fJ.T)c'
Temperature difference fJ.T
~ 40
~
34 (microns)
or
= O'f(l- JL)
Ea
R' = kO'f (l
- JL)
Ea
10
o
60
(l6.12a)
50
10 (microns)
40
(l6.12b)
30
R"'E
- 0'/(1- JL)
20
10
OOL--L-21..00-.L--:4.L00=--..l.---:6::-00=-..L--;;;;::--"--~1
0'00
Temperature (OC)
Fig. 16.7. Room-temperature moduli of rupture of Al,O, specimens of various grain sizes
as functions of quench temperature. From T. K. Gupta, J. Am. Ceram. Soc., SS, 249 (1972).
(16.13a)
R""- EYcrr
- 0'/(1- JL)
(16.13b)
830
INTRODUCTION TO CERAMICS
reaches a maximum within a few seconds after quenching. With continued cooling, the interior contracts at a greater rate with changing
temperature than the rigid outside (recall the change in thermal expansion
coefficient on going through the glass transition) until an isothermal state
is again attained at room temperature.
The initial large thermal contraction of the surface relative to the
midplane tends to produce tensile stresses in the surface and compressive
stresses in the midplane. In an elastic solid, such as that illustrated in Fig.
16.1, these stresses appear and then are cancelled by stresses of opposite
sign during the later stages' of cooling. In the case of glass, however,
stresses can relax at high temperatures; the stresses induced in the later
o,-8
lf2 1-
3 1-
4 15~
16.4
_\
.1
.1
"'=
r...
'--
\\\ JI
'-"
1\
.3
PJ
E
S
1-
c:
~
Q)
.2 i
0.61
c:
~
(cal/cm 2
h
oC sec)
To (OC)
8 M (nm/cm)
Q)
t-
cm
0.0053
616
1190
r.-,
0.61
cm
VI
c:
.g
:
-o
(/)
,"-J
~-
0.0053
648
1315
'd
l--
\V
1\
-~
c:::7
V .~ 400 ~l'CJ
.
ro
.~
8~~I\I-iloo
1U
'--/
rc:J
'--./
A
M
1\
V
\\
e--
\..J
A'
'---/
1\ /
2O
.3
.2-
.....,
V"J
.~
--=-.J
1\
,V'
'-''"'
1\
il.Tmax
.2 -
.....
1~
il.T:nax
.4
6-~
.1
.3
.2
il.Tmax
.3
71- Al
8 M
.2
6~Tmax
831
J 0.61 l
cm
0.0053
738
1335
\\J l
-~
0.61
cm
0.0106
737
2100
Fig. 16.8. Stress distributions through thickness of plate glass during quenching for
different quench conditions. From O. S. Narayanaswamy and R. Gardon, J. Am. Ceram.
Soc., 52, 554 (1969).
832
INTRODUCTION TO CERAMICS
/~
..- ........
....
833
0.0106_---
;;; 2000
e
'"
0.0079
-----
~.
C/J
1500
'"Ea .
Resultant stress
o 0.0053
Applied stress
'"~
O'"
1000
0.0026
500
0.0003
(natural convection)
Ow=::=-.=..1..---'-_ _-'--_--l_ _-.L._~
500
600
700
800
Initial temperature To(oe)
Fig. 16.9. Degree of temper as a function of initial temperature and quench rate
(heat-transfer coefficient). From R. Gardon in Proceedillgs 01 VII bltematiollal Congress on
Glass, leG, Brussels, 1966, pp. 79-83.
Stress (psi)
Fig. 16.10. Residual stress, applied stress, and resultant stress distribution for transverse
loading of a tempered glass plateo
16.5
Annealing
834
INTRODUCTION TO CERAMICS
Table 16.4.
835
Glass Type
pSI
3.5
3.65
2.5
0.24
0.26
0.18
Fused silica
96% silica (Vyeor)
Soda-lime-silica
Lea9-alkali silicate
40% PbO
80% PbO
Low expansion borosilieate
13, bl'ewsters
0.19
-0.07
0.27
2.7
-1.0
3.9
Htress difference,
{Tu
{T,
(n, - lI u)ln
"
= 10 13 - J j - dynes/cm-
= rlB psi
where r is the retardation difference (m..,/cm) and (n, - n,)/ 11
is the fractional retardation difference (cm/cm).
preexisting stresses but rather involves cooling freshly formed and largely
stress-free material in such a way that unduly large permanent stresses
are avoided.
Analysis of the rate of decrease of stress at constant temperature
during annealing is complicated by the fact that this rate is dependent on
the past thermal history, which varies from spot to spot in the ware with
normal glass operations. The variations with thermal history result from
the fact that the glass structure and viscosity change with past history in
the transition range, as discussed in Chapters 3 and 14.
If the rate of stress relief is taken as proportional to the stress
dO"
1
- = --O"
dt
(16.14a)
where
0"0
836
INTRODUCTION TO CERAMICS
=-!l
M
is
(16.15)
.2:.;;
loo H( T ) e
837
-liT
dT
.~ 'IEQ ~-------:::==-------:;T::--im-e
>
(16.16a)
(a)
EV
where n is temperature-dependent, having a value of about 2 at temperatures near the upper part of the transformation range and increasing to
about 3 at temperatures near the lower part of this range.
The fact that a distribution of relaxation times is required to describe
the experimental data is associated with two phenomena: (1) a distribution of molecular processes is involved in the relaxation, and (2) the
properties of the glass change during the relaxation process. The expeeted
distribution of molecular processes is related to structural variations in
the materia!. Foremost among the property changes which are important
in annealing of glass is the variation of viscosity with time. Such a
variation is shown by the data in Fig. 16.11a, and the corresponding
variation in specific volume is shown in Fig. 16.11b. The variation of
viscosity with time introduces an essential nonlinearity into the relaxation
process, as
der
1
-=---er
dt
T(er)
EQ
Time
L---"::::==~------
>
(b)
Fig. 16.11. Variation of (a) viscosity and (b) specific vol~m~ with time during ~nn~aling ~f
a glass (schernatic). Equilibriurn viscosity (1)EQ) and eqUlhbnum volurne (VEQ ) mdlcated In
figure.
(16.17a)
where the time, and hence the stress, variation of the relaxation time is
associated with the time dependence of the viscosity. The efects of such
a nonlinearity have been explored by O. S. Narayanaswamy,* who
introduces a reduced time scale to allow for the changing viscosity.
For many commercial glasses, the rate of stress release on annealing is
*J.
::J
er
(l6.17b)
ero
839
INTRODUCTION TO CERAMICS
the annealing range. Taking a value for a' = 2.5a, E = 10 psi, klpc =
0.0013 in. 2 /sec (0.0084 cm2 /sec), and JL = 0.2, which are typical values for
a number o soda-lime-silica glasses, the safe rate o cooling is given as
838
ep
(16.18)
(16.19)
'.
where U is the stress in psi. At the annealing point, 'T/ = lO\) , the time
required for coarse annealing is about 14 min, assuming that the residual
stress is reduced to 375 psi, whereas for fine annealing (u = 50 psi) the
requirement is about 204 mino
The final stress in the cooled glass will be a summation of the
unreleased stress present before cooling and the residual stress res.ulting
from the cooling process, both corrected or sorne stress release that
,occurs during cooling. If the glass is cooled at a constant rate, the
temperature distribution is parabolic, as discussed earlier in this chapter.
For a thick plate of half thickness r m, Te - T a equals 1/3(Te - T s);
thereore from Table 16.2 for a cooling rate of ep C/sec,
e -
eprm
Ea'
=3(1-v)
.T =
C/sec
(16.22)
= 6k/pc p
650...---....,---,----r--,.-----r-------,
(16.20)
Eu
E
rm a
-5
a.>
u
18(1- JL)k/pc p
100 ~
""'-_ _..........--.= 80 :::
"@ 550
E
~ 500
~
~
60
- 40 -o
20 ~
~-~-~:-------.:"\c-+-----------1 O ~
.~
450
400 L_L_L_-h---:+;::::::~~~=';==?'
380 O
60
120
180
240
300
360
42D
Time t (sec)
Ea'rm 4>
(16.21)
where a' is the expansion coefficient in the annealing range. For a typical
glass, a' is two to three times the value measured at low temperaturesin
Fig 16 12
840
INTRODUCTION TO CERAMICS
I hr
healing
y, hr al
Ta +5
Cool lo 7:, - 25
all'C/min
Cool lo
Ts -75 al
Cool al
2'C/min allO'C/min
~r-'"\~I\I\
500
:':
~ 400 Q)
Q.
~ 300
200
Fig. 16.13. Typical annealing schedule for Hn.-thick soda-lime-silica ordinary ware eooled
on two sides.
841
(J"
AV
3(1- 2.L) V
(16.23)
842
INTRODUCTION TO CERAMICS
843
penetration should tend to be proportional to the first power, rather than the
square root, of time. The disadvantages of this process include the fact that
glasses generally have a positive temperature coefficient of conductivity,
which tends to cause channeling of current flow to any slightly overheated
area of a plate-shaped conductor, resulting in perforation-an efect which
is accentuated by the increase in resistivity, and corresponding increase in
voltage and power for a given current, which accompanies increasing depth
of penetration. The one-dimensional character of electrically indu.ced
migration can be mitigated by electrolyzing one side to twice the req~l.red
depth, followed by a reversal of polarity and the passage of half the ongmal
quantity of charge in the opposite direction.
Both diffusion and electrical-migration ion-exchange techniques are
limited by relaxation processes taking place at elevated temperatures.
This results in the tensile strength of the body going through a maximum
as the time of ion exchange is extended. The higher the temperature for a
given composition, the earlier the maximum is reached and the steeper the
decline thereafter. Even for ion-exchange temperatures below the nominal strain point of the glass, viscous and viscoelastic relaxation processes
can still occur at appreciable rates. This is particularly true of the surface
layer, where stress levels are often in the range of 100,000 psi. In addition
to such stress relaxation, use of a chemically strengthened body at
elevated temperatures can result in a decrease in strength associated with
a decrease in the concentration gradients.
In addition to such a stuffing of the surface by substituting a large ion
for a smaller ion, strengthening can also be achieved by exchanging with a
smaller ion aboye the transformation range, as Li for Na. The surface
regions containing the smaller ions are generally characterized by smaller
expansion coefficients than the bulk glass and hence result in a surface
compression. The magnitude of the compression achieved in this way is,
however, considerably smaller than that which can be obtained by the
stuffing technique. A technologically significant example of this is provided by the surface dealkalization of glasses by high-temperature
treatment with a variety of acidic reagents, such as gaseous S02 or S03.
The resulting surface skin has a lower thermal expansion coefficient as
well as higher durability. Unfortunately, the process tends to be selflimiting, since the dealkalized surface tends to prevent further diffusive
loss of alkali oxide.
Changes in the molar volume of the surface regions of a glass can also
be effected by crystallization of the surface. This process, which is well
covered in the patent literature but not much used in technological
practice, is often coupled with an ion exchange of the surface region to
provide a favorable glass phase for crystallization. In many cases, the
844
INTRODUCTION TO CERAMICS
Problems
16.1.
16.2.
16.3.
Suggested Reading
B. A. Boley and J. H. Weiner, Theory of Thermal Stresses, John Wiley &
Sons, Inc., New York, 1960.
2.
3.
4.
5.
6.
16.4.
16.5.
16.6.
oi
1.
845
846
16.7.
INTRODUCTION TO CERAMICS
(a)
(b)
(e)
17
16.8.
Des~ri~e what oc~urs in crazing of a glaze. What is the cause of crazing? How might
a tnaxJal porcelam body Or a glaze composition be altered to prevent it from
occurring?
16.9.
16.10.
A glass sandwich of Pyrex-soft glass-Pyrex was made and heated to form a bond.
Calculate the normal stresses and the shear stress acting at the interface of the two
glasses after cooling to room temperature. Pyrex has a thermal expansion coefficient
6
of 3.6 x 10- and the soft glass a thermal expansion coefficient of 8.4 x 10- 6 Assume
all viscous or plastic flow ceases below SOOC. The slabs are 0.01 in. thick. Young's
modulus for Pyrex is 6 x lO' kg/cm 2 and for soft glass is 7 x lO' kg/cm 2
Electrical
Conductivity
NU~~....::c'":)
l
(
Electrical-Conduction Phenomena
848
INTRODUCTION TO CERAMICS
ELECTRICAL CONDUCTIVITY
charge per part!cle ze, where z. is the valence and e the electronic charge,
t~en the electnc-current densIty for the i 'h particle is given by
seconds-practical units. Other measurements or calculations are reported in terms of electrostatic units (esu), in which the fundamental units
are centimeter, gram, and second, and the dielectric constant is taken as
plain number. Conversion factors are given in Table 17.1.
If we consider the charge carriers as initially having a random movement with an average drift velocity of zero, the equation of motion
resulting from the application of a steady average external force, F = zeE,
is
ji
nZiev
(17.1)
(T = i
(17.2)
where E is the electric field strength, taking any field distortion into
accoun~. (The current density, drift velocity, and field strength are vector
propertIes, and vector notation has advantages. The nonvectorial notation
is suitable for our purposes, however, and is simpler for sorne readers.)
.Consequently,
(Ti
(nize) E
m (dV
dt
zeE
(17.9)
(17.10)
(17.3)
and by integrating,
v (t)
= Vo
(~ t)
exp
(17.11)
V,
E,
(17.4)
+~) =
The drift velocity is directly proportional to the locally acting electric field
strength, and this ratio is defined as the mobility:
.ti
849
(n,zie).ti
(17.5)
out
zeE
(~~ =
o), we have
zeTE
(17.12)
v=-m
(17.6)
(T
(nze) (Z;T)
nz~2T
(17.13)
(17.7)
,-
That is, the charge transported is proportional to the charge density (zen),
the acceleration of charge in a given field (proportional to ze /m), and T
corresponding to the time that these forces act on the charge between
collisions and random motion.
'
Kinds of Charge Carriers. The general characteristics of solids in
relation to mobile charged particles have been discussed in Chapters 4
and 6. They can be described in terms of the electron energy band
structure, such as those shown in Fig. 17.1. For metals there is always a
finite concentration of electrons in the conduction band; for semiconduc-
(17.8)
851
ELECTRICAL CONDUCTIVITY
'O
o~
X
M
D D
__ ~------ --.
--~------
Fig. 17.1.
lU"OC'"' '
--------------} Partly
.
occupled
Occupied
DlIlIl'I.i!!:Il
Metal
Semiconductor
Insulator
Electron energy bands in (a) metals, (b) semiconductors, and (e) insulators..
MateriaIs
Metals:
Copper
Iron
Molybdenum
Tungsten
ReOl
er02
Semieonduetors:
Dense silieon earbide
Boron earbide
Germanium (pure)
FelO.
Insulators:
Si0 2 gIass
Steatite poree!ain
Fire-clay briek
Low-voltage poreelain
850
Resistivity (ohm-cm)
1.7 X 10- 6
10 X 10-6
5.2 X 10-6
5.5 X 10-6
2 X 10-6
3 x lO-s
10
0.5
40
10-2
> 1014
> lO'
8
10
10"_10'
te
852
He .. *1 t !!Mc'httbili ..
iN
INTRODUCTION TO CERAMICS
= /-,1 (n,ze )
..
-;
t'"
rfJ
(17.14)
.5
(17.15)
8...:
+ t 2 + ... + ti + ... = 1
(17.17)
o "Cl
'"
.-
==
=
~ o
~Q"
..: 8
'" o
cU
.Sl
'tU
-g
6A
E
o
o
ci
g
Z
~ ~
853
854
INTRODUCTION TO CERAMICS
ELECTRICAL CONDUCTIVITY
-_1
@a=zieEa
~a---1
E J'\f;Qt
(a)
jo~ning
(b)
Djstance-~
Fig. 17.2. Potential barriers (a) without and (b) with an applied field E for an ion with
charge z,e, and interatomic spacing a.
."
a I2)
_ zenav exp (-.:lO'+ZeE
kT
(17.18)
(17.19)
J lro~~d -
855
J lb.c'w~d -
T("C)
10-8700
JIn<.
='
J~o~~d
_.
J4,.ckw~d -
10- 9
(l7.20~
(ne~;a
e -AGtlkT) E
ID
~
~
c:
uE
,l
ID
o
~ 10- 11
o
'ji
_ eza 2 V
J.l, -
--py- e
Low
1--- temperature
extrinsic
~~
ID
:E
-AGtlkT
(17.22)
o.
~
.0"",-
High
temperature
intrinsic ---
o
o
~.
:
10- 12
350
'C:;
~
(17.21)
400
\\
E lO-lO
500
600
0"'"
(17.23)
10- 13
1.00
1.10
1.20
1.30 1.40
I/Txl0 3
1.50
1.60
1.70
Fig. 17.3. Diffusion coefficients measured directly (open circles) and calculated from the
electrical conductivity data (c1osed circles) for Na+ in sodium chloride. From D. Mapother,
H. N. Crooks, and R. Maurer, J. Chem. Phys., 18, 1231 (1950).
(17.24)
857
INTRODUCTlON TO CERAMICS
ELECTRICAL CONDUCTlVITY
856
700
700
NaCl:Mn
500
NaCl
175'C o~~,
1
~
0,
10-'\-
E
u
E
u
AgBr:S
E
~ 10- 6
,,
10- 8 -
225' o-.~
.........0,
----
AgBr:Cd
b\
~
'0,\\
225'
325'
b...
0,
1.0 I--------.:~~:::o::_:t_-:-------;/-------325'
275
10- 12
~...L--'-----l_..L-....l--..L_L<L..J 10- 5
1.0
2.0
1000/T
(a)
2.5
3.0
1.0
1.5
1000/T
(b)
Cation .co~ductivity in NaCI. In (a) the curve for the pure crystal shows stages I
(mtrmslc), 11 (extrmslc), and 111 (association), and the curve for the heavily doped crystal
shows stages 11, m, IV (precipitation), and lIJ' (association with precipitation frozen). Part
(b) for the pure crystal shows the additional rise in stage I' from the anion contribution to
the. conductivity. The conductivity is expressed in ohm-' cm-l. From Kirk and Pratt, Proc.
Bra. Ceram. Soc., 9, 215 ( 1 9 6 7 ) . '
0.5,=-L_l...--:7.::--l.---!:-_.J-~_.....L.........J_,-L_L---L_.L--L_L-I
~ig ..17.~.
1000
-
l
j
400
c(ppm) S
2000
c(ppm) Cd - - -
Fig, 7.5. Conductivity isotherms for AgBr doped with Cd' and S'-. The dashed lines for
AgBr:S are outside the equilibrium solubility limit. From J. Telfow, Ann. Phys., 5, 63 (1950),
and Z. Phys. Chem., 195, 213 (1950).
858
INTRODUCTION TO CERAMICS
ELECTRICAL CONDUCTIVITY
CdBr2, increased conductivity results from the increased vacancy concentration, which now contributes the major part of the "total conductivity. Using the concepts discussed for the concentration of the individual
defects and their relative mobilities, the minimum of the relative conductivity curve can be used to measure the ratio of mobilities. As Ag2S is
added to AgBr, more silver interstitials are formed, and by similar
we can understand why the conductivity increases, with no
, reasoning
..
mlmmum.
The precise application of these relationships is somewhat disturbed by
chemical effects; different solutes affect the mobility, as shown in Fig.
17.6. Calcium is significantIy more effective than strontium or barium in
increasing the conductivity of potassium chloride at the same temperature. This may refiect the interaction of moving vacancies with a strain
field around solutes, by which the larger barium ion may hold additional
vacancies in its strain field to help accommodate elastic distortion.
Another way of looking at this is to describe the elastic strain field as
contributing to the stability of vacancy-solute associates giving rise to a
greater association between vacancies and solute ions in the case of
barium.
(ze)2 e
o KCI + CaCI2
+ KCI + SrCI2
x KCI + BaCI2
l' =
10
10 17
(1 + eR)
(17.26)
20
10 17 30
(17.27)
T= 732C
10- 7
Eu
(17.25)
10 )e
859
10 17
Fig. 17.6. The specific conductivity of KCI with various admixtures as indicated. The
concentration of foreign cations is given as the number per cubic centimeter; this may be
converted to a molarfraction by dividing by the numberof K+ ions percublc centimeter, that is,
1.62 x 1023 From reference 2.
860
INTRODUCTION TO CERAMICS
861
ELECTRICAL CONDUCTIVITY
1.0
~\',
\
\ \
0.9
\
\
0.8
\
\
\
\
\
\
\
\
\
\
\
\
\
"
0.3
III
"-
'- ........
..........
/
/
AgCI:Cd
0.2
..........
-- --
/
/
0.1
15
~/
OL----l_-L_..L::=:::l=:=-oI.~"."b=d=~
0,./
!{J/
/
I
/
/
"'/
10
'" I
'- I
/
I
0.2
0.3
0.4
0.5
0.6
kT//iHa - > -
0.7
0.8
Fig. 17.7 (COTltiTllled). (e) Curves showing the degree of association p as a function of the
reduced temperature kT/l!.H. at three different concentrations: 1, e = 10- 4 ; 11, e = 10-'; 111,
e = 10- 2 The dashed lines have been calculated from simple association. The fulllines refer to
a more elaborate calculation using Debye-Hckel theory. From reference 2.
I ",Q(;
/ .1
/ .'1
/
/
O '--:-=-----L--L--L-::-:-~-L-..L----L-.....J
500
1000
0.1
(e)
/-'2<::
l'%'
0./
<:/)/
./
2000
5000
e(ppm)
c(ppm)
(a)
(b)
Fig. 17.7. (a) and (h) Conductivity isotherms for AgCI:Cd. The experimental points and
the calculated curves with association and with Debye-Hckel interactions, including
association, are taken directly from the reference. The results of the simple theory without
association have been calculated for comparison with K F I/2 = 21.7 ppm and (J = BAo/B v =
11.13 at 239.6C and K F 'J2 = 45.9 ppm and (J = 8.63 at 267.3C. From H. C. Abbink a~d
S.
Martin, Jr., J. Phys. Chem. Solids, 27, 205 (1%6).
.'
INTRODUCTION TO CERAMICS
862
ELECTRICAL CONDUCTIVITY
863
Calculated Irom
~Iectrical conductivity
t:.
10\
"9
10-1
.~ 10- 8
c-
10-2
;::
Q;
o
u
e
o
.;
:E
i5
10--1
~_-'-_--J.
0.8
1.2
_ _' - - _ . . L . - _ - ' - _ - L ~
1~
2D
1000lT
Fg. 17.8.
2A
2B
32
(oK- )
position within the unit cel\. The calculation not only confirmed the
existence of paths with very low activation barriers to Ag migration but
showed that the height of the barrier increased rapidly with either a small
increase or small decrease in the size of the migrating ion.
The {3 -aluminas are hexagonal structures with approximate composition AM Il O\7. The mobile ion A is a monovalent specie such as Na, K, Rb,
Ag, Te, or Li, and M is a trivalent ion, Al, Fe, or Ga. Related phases also
occur with approximate formulas AM7 0ll ({3') and AM5 0 s ({3"), the latter
having extremely high conductivities. The conductivities for several
{3-aluminas are plotted as a function of temperature in Fig. 17.10.
The crystal structure consists of planes of atoms parallel to the basal
plane. Four planes of oxygens in a cubic close-packed sequence comprise
a slab within which aluminum atoms occupy octahedral and tetrahedral
sites as in spinel. The spinel blocks are bound together by a rather open
layer of the monovalent ion and oxygen. This loosely bound layer is
thought to be disordered and provide a two-dimensional path for atom
motion with greater than single jump distances.
As the monovalent conduction ions become larger, their mobility
becomes impeded, u(Na (3-Ab03)> u(K (3-AI 2 0 3). As the ion becomes
too small, for example, Li {3-Ahd 3, the ion "rattles around" in the
&8
864
INTRODUCTION TO CERAMICS
ELECTRICAL CONDUCTIVITY
300
100
25
-25
E
u
E
.r::
---
::.:: -1
:;
b
01J
..9
t&
865
where the substitution JL = JLo + RT In P Oz has been made for the chemical potential of oxygen and zoz- = - 2. If we allow current to flow (ions to
migrate), this voltage is slight1y less because we no longer have thermodynamic equilibrium.
Equation 17.28 is a form of the N ernst equation, which at equilibrium
relates the standard free-energy change !J.Go of the virtual process (no
current flow) to the voltage, !J.Go = - zF</>. For example, for the reactions
CO + 0 2- = 2e' + CO 2
at side I of Zr02
(17.30)
1/202 (in air) + 2e' ~ 0 2at side 11 of Zr02
!J.Go
CO+ 1/202~C02
Temperature (OC)
3 800
the voltage is
-2
-3
Thus if carbon monoxide is flowed over one side of the zirconia cell and is .
oxidized to carbon dioxide by the flow of oxygen ions, the e1ectron flow
through an external circuit can do useful work. Operated at about 700C
electrical conversion efficiencies of - 80% are realizable.
It is clear that for power generation both the voltage and current flux
are critica!. The voltage is determined by the overall chemical reactions,
for example, those in Eq. 17.30, the current delivery depends on the rate
of diffusion of the current-carrying ions. Thus, a high conductivity is
important in addition to completely ionic conductivity (t, = 1). If there is
electronic current conduction in the electrolyte, the measured voltage </>m
is less than that, </>, given in Eq. 17.28:
-4
1000/T(OK)
Fig. 17.10.
We can derive these relationships by beginning with Eq. 9.11 for the ion
= d</> /dx :
. = - B [aJLI
dA-.]
ax + zF d;
}I
</>m = </> - -F
Z ,
(side 1) -
JLI
(side II) =
JZ,F(~:) dx = - z,F</>
IJ
te dJL
(17.31)
where te is the electronic t.ransference number which may vary across the
electrolyte.
The f3 -alumina fast ion conductors have been proposed as e1ectrolytes
for a sodium-sulfur storage battery. In this case the sodium ion is the
conducting ion. Above 300C the overall reaction is
=1
JLI
"..", .
(17.32)
(17.28)
(17.29)
866
INTRODUCTION TO CERAMICS
111
(Eg )
27rkT)3/2( ')3/4
n = P = 2 ( -z
memh exp - 2kT
I
~
!2
b
= p = K =
e, exp ( - 2~T )
-16
10
(17.34)
O
Since
= 2
e7rm:l/~r;z~1/2kTY/2
CT =
lel(nfe + PJLh)
5
3
10 fT
(17.35)
(17.36)
(17.37)
(OK)
10-6
(17.33)
.r:
10-
867
868
INTRODUCTION TO CERAMICS
al =
27TkT)312 31.
(E
(m .m ,,) exp - 2kT
[ 2Ie I(-rg
)]
ELECTRICAL CONDUCTIVITY
(/L.
+ /Lh)
(17.38)
Crystal
Table 17.4. Value of the Energy Gap at Room Temperature for Intrinsic Semiconduction
Crystal
E. (eV)
BaTiO,
C (diamond)
Si
a-SiC
PbS
PbSe
PbTe
Cu 20
Fe 2O,
AgI
KCl
MgO
AhO,
2.5-3.2
5.2-5.6
1.1
2.8-3
0.35
0.27-0.5
0.25-0.30
2.1
3.1
2.8
7
>7.8
>8
Crystal
Ti0 2
CaF2
BN
CdO
LiF
Ga2O,
CoO
GaP
Cu 20
CdS
GaAs
ZnSe
CdTe
869
Diamond
Si
Ge
InSb
InAs
InP
GaP
AlN
Electrons
Roles
Crystal
Electrons
Roles
1200
400
1800
1700
200
650
120
lO
PbS
PbSe
PbTe
AgCl
KBr (loo K)
CdTe
GaAs
Sn02
SrTi03
Fe 2O,
Ti0 2
Fe3 O.
CoFe 2O.
600
900
1700
50
100
600
8000
160
6
0.1
0.2
200
700
930
1800
1600
3800
105
23,000
3400
150
Feo}
E. (eV)
MnO
CoO
NiO
GaSb
3.05-3.8
12
4.8
2.1
12
4.6
4
2.25
2.1
2.42
1.4
2.6
1.45
~O.I
2500-4000
650
10-'
3000
0.1
10-8
eT.
=-.
m.
(17.39)
/L
1
1 ]-'
= [ /LT
+ /Lr
/LT = /LT0T-
312
/Ll = /LrT+
(17.40)
315
(17.41)
and /Lr and /L~ are constants. Thus, the temper~ture dependence of the
mobility term for quasi-free electrons and holes IS ~~ch smal1er than that
for their concentration. As a result, the conducttvtty (Eq. 17.37) has a
temperature dependence which is mostly determined by the concentration termo
.
In ionic host lattices, where there is interaction between orbl~als of
neighboring ions, there is a polarization of the lattice associated wlth the
870
ELECTRICAL CONDUCTIVITY
INTRODUCTION TO CERAMICS
ex
exp [- 2;ry]
(17.42)
where E p = e 2/ Kelrrp (l/ Kelr is the difference between the reciprocals of the
optical and static dielectric constants and r p is the dimension of a lattice
distortion).
For conduction which primarily results from the mobility of small
polarons, the temperature dependence of the conductivity is (from Eq.
17.42)
ex n.L ex
exp [ (-
2;r) - (2;ry) ]
(17.43)
871
OB
Electrons
EH
+++++++++++
net accumulation of electrons at the top of the slab and an effective net
positive charge accumulation at the bottom. At steady state the voltage
gradient EH, in the x direction opposes any further accumulation due to
the motion electrons in the magnetic field:
(l7.44)
EH = vB
or in terms of current density je
EH = RHjeB
(l7.45)
H -
1 [P.L~.h - n.L~.e]
\el (p .L
H.h
(17.47)
+ n.L H.eY
For materials with quasi-free e1ectrons the Hall mobility (Eq. 17.46) is
the same as the drift mobility (Eq. 17.11). For polar compounds in which
the electronic defects are trapped or localized at specific sites (small
polarons), the drift and Hall mobilities are not identical.
Another technique for independentIy measuring the concentration of
carriers is from the thermoelectric or Seebeck effect. When a temperature
gradient is imposed on a semiconductor (Fig. 17.13), more e1ectrons are
excited into the conduction band at thehigher temperature, but the hot
electrons tend to diffuse to the colder region. When the chemicalpotential gradient due to these two effects is equal but opposite to the
electric-field gradient, we have a steady state. In addition to the flow of
heat by phonons (lattice vibrations), a heat of transport H is associated
with particle migration in a thermal gradient. Thus if we write an electroncurrent-flux equation similar to Eq. 9.11 but also include the thermal-
872
INTRODUCTION TO CERAMICS
ELECTRICAL CONDUCTIVITY
+++++
+++++
Q=
n type
(17.48)
= [_ k 8ln 11 +
80fT)
(17.49)
HoJ _1_
eT
The first term in the brackets can be obtained from Eq. 4.50 (we would use
Eq. 4.51 for electron holes). Thus the Seebeck effect is related to
concentration of carriers:
Qe =
e~ [(E
p -
Be) + H:]
(17.50)
[In N
+ H:]
e
n kT
=~
>Q
e
w
00
(17.52)
In glasses cortaining significant concentrations of alkali oxides, particularly sodium, the current is carred almost entirely by alkali ions. The
mobility of these ions is much larger than that of the network-forming
ions at aH temperatures, and at temperatures below the glass transition
they are more mobile by several orders of magnitude.
WheD the current. is carried completely by the alkali ions, their
transference number is unity, and the conduction characteristics are
determined by the concentration and mobility of the alkali ions. A main
difference between glasses and crystals is the fact that there is no single
value for the energy barrier between sodium ion positions in glasses.
Rather, the energy configuration along a coordinate corresponding \0
sodium migration through the glass is similar to that illustrated in Fig.
17.14. There are often adjacent low-energy positions with but a small
energy barrier between them; large-energy barriers occur between occasional adjacent positions in accordance with the random nature of the
glass structure.
Fig. 1:. ~3. Seebeck effect of a semiconductor. The majority carrier diffuses to the cold
end, glVlng a A<b/A T.
8x
+ Pf.LhQh
+ Pf.Lh
p type
le/Dc [8n +~
nf.LeQe
nf.Le
+++++
+ + ++ +
Tco1d
je =
873
the ~ajori~y ~arriers, the sign of the voltage is opposite, but the
magmtude IS glven by a similar expression:
(17.51)
l.
Position co-ordinate-
Fig. 17.14.
network.
Potential energy barriers along the path o sodium ion migration in a glassy
874
INTRODUCTION TO CERAMICS
ELECTRICAL CONDUCTIVITY
t_)
= ep exp ( __
R
(17.53)
Re
:J +
A z exp (-
:J +
A 3 exp ( -
:J + . ..
(17.54)
+280 --r-r--r---r----,-,----r----,---,
+240
+200
+160
Charge curve
+120
+80
e~
::>
o
+40~----~~~~~~~~~~~~~~~;;;;;;::~
-40
-80
-120
-160
-200
-240
875
Discharge curve
= u o exp (- RET)
(17.55)
- 2800~____,,~__;_;~_;;:;;-~~~:;--~:;--~:::-----l----.L----.l
200
250
300
400
450
500
Time (sec)
Fig. 17.15. Absorption current during charging and discharge of soda-lime-silicate glass.
. From E. M. Guyer, J. Am. Ceram. Soc., 16,607 (1933).
_ _ _ _ _.....
, __
' ....
' __
, .rt'
..
876
'
.------~~----
INTRODUCTION TO CERAMICS
..-
...
877
ELECTRICAL CONDUCTIVITY
10 , - - - - - , - - - , - - - - , - - - - . , . - - - - - ,
o
10 10
8 -
(a) _ _---;:;r-of!
10 9
+6
10 8
10 7
E
u
E
.r:
6
.8 10
Z.
0.2
0.4
0.6
0.8
V>
.;
1.0
100C
5
o:: 10
<l)
Relative thickness
150C
10 4
200C
250C
10:3
300C
350C
10 2
(17.56)
400C
10 '----L---l--..L---:~-_::_::_---;';;:----::7'0
O
10
20
30
40
50
Na20(%)~
100
IL---,L--~---;:~1- - t . I;----AI;;--~I
90
80
70
60
50
40
30
- - - S i0 2(%)
879
ELECTRlCAL CONDUCTlVITY
INTRODUCTION TO CERAMICS
878
CaO
Ba
.9
BaO
PbO
1010 l . . - - - l _ - - - ' L - . . - l - . . - l - . . - l - O
10
20
30
40
50
60
CaO, BaO or PbO (%)
7
Beo
6 '--_ _-:::-:0.5
-L..
1.0
----I
1.5
E
u
E 10 12
..c
MgO
.?'
Fig. 17.18. Vari~tion of ~es.is~ivity with divalent ion radius for 0.20Na,O-0.20RO-0.60SiO,
glas.ses. D.~shed ~me = reslstlVlty of 0.20Na,O-0.80SiO, glass. From O. V. Mazurin and R. V.
Brallovskll, SovIet Phys. Salid State, 2, 243 (1960).
~<Il 10 10
ZnO
'Vi
<ll
'"
106
10
20
30
40
50
l..-_-..l.._ _. l - _ . . - l - - - '
20
40
60
Na20 or K 2 0 (%)
80
Fig. 17.19. Effect of replacement of SiO, by other oxides on a weight percent basis in an
O.l8Na,O-0.82SiO, glass. From M. Fulda, Sprechsaal, 60, 769, 789, 810 (1927).
INTRODUCTION TO CERAMICS
880
4.0
3.5
2.0
0.8 r----,----r-----=:,.::---_=_;
I
t
33
e
::o
31
29
"uo
27
:o
e
~ 0.7
.g Q} 25
E".::::E 23
""ro
~ 6 21
ID
e
19
~o
ID
ID
:;; 0.6
>
::o
~
ro
<>::
:g
>
<>::
oO o.
f::,
17
15
13
O
0
00
50
2.0
e
29
:o
27
"ueo
25
O
::o
Fig. 17.20. Variation of aetivation energy for de eonduetion with eomposition in the system
Na,OXAI,O,. 2(4 - X)SiO,. From J. O. Isard, f. Soco G/ass Techno/., 43, lB (1959).
" ID 23
(50
-". ___
E
""-ro
<':1<':1
21
<':lo
O
~
~
ID~
19
17
ro
>
::o
<>::
::o
15
13
O
O
50
29
:o
27
"eo
25
O
::o
.6
.g ~ 23
~ O
E" ...
21
-
<':l.
""ro
~
~ 19
c~
ID
o
ro
>
17
::o
::o
<>::
15
13
<':1
O
10
20
DO O O
30
50
Mol% CS20
Fig.17.21. Variation of aetivation energy with eomposition for Na,O-SiO" K,O-SiO" and
Cs,O-SiO, glasses. Different symbols in each plot indicate results of different investigators.
From R. M. Hakim and D. R. Uhlmann, Phys. Chem. G/asses, 12, 132 (1971).
881
882
INTRODUCTION TO CERAMICS
883
ELECTRICAL CONDUCTIVITY
40
(j)
... 35
ro
>.
~ 30
Q)
."
1 25
u
20
CszO
RbzO + CszO
CszO
CszO
LizO + CszO
15 L--L._L-.....L.._L-.....L..---JL-.....L..-...l_.....L..-...l_.....L..---'_.....L..---J'----'----'
O 02.5 0.5 0.75 1.0
O 0.250.5 0.75 1.0
O 0.25 0.5 0.75 1.0
O 0.25 0.5 0.75 1.0
Molar concentration ratio
0.5
X
(Fraction 01 sodium ions)
1.0
Fig. 17.23. Variation of aetivation energy for de eonduetion with substitution of other
alkali ions for Cs in binary silieate glasses eontaining 15% alkali oxide. From R. M. Hakim
and D. R. Uhlmann, Phys. Chem. Glasses, 8, 174 (\967).
contrast, subsequent electrolysis measurements* suggested that the current is carried by H+ ions or electrons and not by Pb 2 + ions, and it was
suggested that the agreement between measured resistivities and those
caIculated from diffusion da was fortuitous. Still later workt has
indicated, however, that variations in the oxidation-reduction state of the
PbOSi0 2 glass have no significant effect on its e1ectrical behavior and
tends to support the original suggestion. Studies of several MO-B 2 0 3Ab03 glasses have been carried out. The results for glasses of approximately the composition 2MOxB 2 03Ab03 are shown in Fig. 17.24 and'
indicate that the conductivity depends little, if at all, on the nature of the
alkaline earth metal. Sorne of these glasses are noted for electrical
resistivities which are higher than the purest available grade of fused
silica.
When glasses of high resistivity are required, the alkali content should
be kept to a minimum and divalent ions such as lead and barium used as
d.
884
ELECTRICAL CONDUCTIVITY
INTRODUCTION TO CERAMICS
885
Temperature (OC)
12
[;,
11-
o CuO-glasses-wen (1961a)
o SrO-glasses Hiraya-3
[;, BuO-glasses (1961)
910o
ID
::!.
"- 9
o
.so>
7
6
70
Fig. 17.24. Variation of resistivity at 450C with composition in MO-B 2 0 3-AI 2 0 3 g1asses.
From O. V. Mazurin, G. A. Pav1ova, E. 1. Lev, and E. K. Leko, Soviet y Phys. Tech. Phys. 2
2511 (1957).
' ,
10 5 ' -_ _- L . - , - _ - I .
3.0
2.8
2.6
l
j
1.8
'-_----'
1.6
1.4
887
ELECTRICAL CONDUCTIVITY
INTRODUCTION TO CERAMICS
886
-3
T(OC)
100
25
-4
-5
-6
-7
E
v
-8
S
O
.:;
-9
o
o
o
60
69Jo
0.0-11
.e
oo
o
'00
::o
(55)
9
//
\7\7
00
\7
7
\7 \7
'o
5.0
////////0
0.0
.2
\?<v\7\7
tth.
3.0
(50)
.;
'"
-14
(40)
11
o o
\7"7
-13
-15
1.0
LO
-12
(30)
.I::
\7~\7
6D
e
ov
y 13
'O
/
/
E
o
\7
\7
\7
\7
\7
60
g -10
p(5)
15
o
\7
\7
\7
60
.I::
\7
\7\7
17
\7
\7
\7
\7
\7
\7
66
6
DO
7.0
5 L-L--L_t:..-.J-.-L~_-.L----.L-----l.---:~-L-~I~
1.2
1.6
2.0
2.4
2.8
3.6
66
10 3IT(OK)
(b)
o o o o
9.0
11,0
13.0
10 3IT(OK)
Fig. 17.26 (Continlled). (b) Logarithm of resistivity versUS liT for glasses containing 55%
(FeO + Mg0}-45% P 2 0,. Ttie numbers in parentheses are the percentag es of FeO. From K.
W. Hansen, J. E/ectrocllem. Soc., 112, 994 (1965).
(a)
Fig. 17.26. (a) Log conductivity as a function of liT for four typical V 2 0,-P,O, glasses.
From A. B. Schmid, J. Appl. Pllys., 39, 3140 (1968).
Davis.*
*Electronic
tSee N. F. Mott, J. Non-Cryst. So/ids, 1, l, (1968), for discussion.
1971.
.tj:
't
'
&r'd
889
ELECTRICAL CONDUCTlVITY
INTRODUCTlON TO CERAMICS
888
400
9
\
\
100
Eu
\
\
.2-
80
..c
,~
60
""'"
";;
E
E
..c
p type
.2-
n type
E.
>
I
40
Q>
10- 2
"1
\
\
\
'>
Ul
""u
10- 4
10- 6
:J
"O
o::
10- 8
20
10-10 -
00
10- 12
o
Fig. 17.27. The effect of Fe+ 3 /Fe,o", on resistivity at 200C for glasses containing 55%
Fe0--45% P,OJ. From K. W. Hansen, J. Electrochem. Soc., 112, 994 (1965).
10 3/T(OK)
Solids, 5, 55 (1970).
position with a decreased metal content (CU2-x 0. is ano examp.l~) and are
sometimes called deficit semiconductors. If the lmpunty addlt~ons have
filled electron levels close to the energy level of the conduct~on band,
electrons may be excited from impurity atoms into the conduClon ba?d;
these are caBed donor levels. The electron excited into""the conductlOn
band is able to contribute to the conductivity. Negative carrier (n-type)
oxide conductors most commonly result from a nonstoichiometric composition with an excess metal content (Zn!+x is an example) and are
sometimes caBed excess semiconductors..-----.-"
Strontium Titanate. For SrTi0 3 -x, density, lattice. parame~er, a,nd"
conductivity data have demonstrated that the mass acbon re\abonshlps
which we have discussed in Chapter 4 are valid.* Single crystals were
12
7
reduced at 1200 to l400C in gas mixtures (P02 = 10- to 10- atm) in
ELECTRICAL CONDUCTIVITY
1061--1---r------r--_~
891
10 4
00 =
e'"' crystal
a = amorphous
1/20 2(g) +
V~'+~J
(17.57)
~
~
10- 2
[00]
4
E 10-
.c:
10- 8
. ; lO-lO
.S:
.g 10- 12
"tJ
c:
<'310- 14
10- 16
10- 18
10-
~ig.
20
0~---;-----:2----3L---.J4
E (ev)
7.29. . Relation
(17.58)
and fram this the concentration of free electrons for conduction is given
as
[e'] = (2K(T)) 1/3 po,-J/6 = 2 1/3 p o ,-1/6 exp (- 3~~)
(17.59)
.s 10- 6
::.::
o
o
o("T)
= K(T)
Solzds, 4, 1 (1970).
,.
on - ryst.
Nb 20 6
Mo0 2
cao
Ag 2S
cas
caSe
Sn02
CszS
Cs 2Se
BaO
Ta 20ij
WO a
;;- 10
BaTiO a
PbCr04
Fea04
~
~
Vi
c:
Q.I
g10
p-Type
Ag 20
C r 20 a
MnO
CoO
SnO
NiO
A1 20 a
M n a0 4
Co a0 4
SiC
PbS
PbSe
Cu 20
Cu 2S
Pr 20a
19
Q.I
SnS
Sb 2Sa
CuI
Q.I
Q)
c::
Amphoteric
PbTe
U0 2
Ir0 2
20
10 18 L--L-L...L.I....l..LllL_...l-..L..JLW...LLJ.L.----'--'-'--L.LL.u..L_-'--'-....L.J....L.LLL--:-'--'_l..W..llJ
10- 12
10- 11
lO-lO
10- 9
10- 7
Si
Ge
Sn
890
Fig. 17.30. (a) Concentration of free electrons as a function of oxygen pressure in SrTiOj.
Dashed Iines indicate P!i~ dependence.
10
20
F---,--,.---,-----,------.
ELECTRICAL CONDUCTIVITY
893
(17.60)
Since we know that zinc atoms fit into interstitial position in the structure
(see Chapter 4), this same relationship can be written as
Zn(g) = Zn (in ZnO)
I : P0 2
II: P02
III : P02
IV : P02
These in terstitial zinc atoms correspond to impurity levels' in the structUre. They may be expected to become ionized by a reaction such as
= lO- lI atm
= 10-10 atm
= 10- 9 atm
= 10- 8 atm
oc e-E,IkT
(17.63)
""Eu
--
~
<1>
OJJ
e
ro
..c
u
.;
e
<1>
"D
"D
<1>
"
<1>
ro
:E 10- 4 -
10- 3
(e)
Fig. 17.30 (Continued). (b) Temperature dependence of the free electron concentration (Eq.
17.59) at fixed ~xy~en pr~ssures. (e) Measured densities compared to those calculated from
the defect reactlOn mvolvmg oxygen vacancy formation. From H. Yamada and G R M'll J
Solid State Chem., 6, 169 (1973).
. . 1 er, .
892
(17.62)
10- 4
Calculated density change (gjcm 3 )
(17.61)
.894
INTRODUCTION TO CERAMICS
895
ELECTRICAL CONDUCTIVITY
El
10,000 .-------.------,..----1
Eu
I
E
Q.
--.L..-M.- ----
.r:
'E Z
J
~--(M/)"
z;..
1000
:~
55~
:::J
'O
e
o
<.)
10
100
1000
Fig. 17.32. Effect of oxygen pressure on electrical conductivity of zinc oxide. From H. H.
V. Baumbach and C. Wagner, Z. Phys. Chem., B22, 199 (1933).
(17.64)
which is a combination of Eqs. 17.61 and 17.62. The mass-action
,expression for this relationship is
K = [ZniJ[e'J
PZn(8)
(17.65)
If the material is in the extrinsic range in which reaction 17.64 is the main
CUzO
CUz- x O + x Cu(g)
(17.67)
corresponding to a reduction in the copper content. This 'can be interpreted in terms of oxygen content by the equilibrium to form cuprous
oxide:
(17.68)
Adding these equations gives
(17.69)
896
897
INTRODUCTION TO CERAMICS
ELECTRICAL CONDUCTIVITY
copper atom, the charge balance requires that an electron from one of the
adjacent oxygen ions be taken along with the copper ion when it is
removed from the lattice. Formation of the impurity center (equivalent to
Eq. 17.67) corresponds to
CUcu
= Cu(g) + V Cu
(17.70)
However, the Ti4 + ions present have an electron affinity such that the
conduction electrons react with the lattice ions to give
2e' + 2Thi
----.f---
0 0 + 2 V hu + 2h .
E
u
~
3;
~CdO'6000C
101-
11-~
(17.73)
o
u
0,1
(17.73a)
(17.76)
The relative concentration of free conduction electrons and Ti3+ ions, Ti~i,
depends on the relative energy levels of the conduction band and the Ti4 +
acceptor levels. Mass-action equations can be written for reactions
corresponding to Eqs. 17.75 and 17.76. In this particular case it turns out
that most of the electrons are associated with specific Ti4 + ions and
consequently have a much lower mobility than they would if they were in
the conduction bando
In general, then, behavior of semiconducting ceramic materials in the
impurity-controlled region depends to a large extent on atmosphere,
(~;r
202(g) =
= 2Tih
1
10
Oxygen pressure (mm Hg)
100
898
INTRODUCTION TO CERAMICS
ELECTRICAL CONDUCTIVITY
899
.c
'S
~ 10- 2
u
e
o
10- 4
10 -5 o:::---'----:';--'--~--L-l-..L---L-l-.L_L_.l_.i.._.J
6
8
10
12
14
1000/r (01<)
Fig. 17.35:. Semico?ductor properties o yellow-green n type o silicon carbide and black p
type o slhcon carblde. From G. Busch, Herv. Phys. Acl., 19, 189 (1946).
"21 O2 ()
g = Oo + V"Ni +2N"IN;
(17.77)
...
900
t - sirt
901
ELECTRICAL CONDUCTIVITY
INTRODUCTION TO CERAMICS
10 3
If a smaIl amount of lithium oxide is added to the nickel oxide and the
mixture is fired in air at the same temperature, a product with much lower
resistivity is obtained. For pure nickel oxide the resistivity after firng in
air is approximately 108 ohm-cm; the addition of 10 atomic% lithium gives
a product with a resistivity of about 1 ohm-cm. Appreciable quantities of
lithium are dissolved into nickel oxide lattice and result in the formation
of NJ+ content equivalent to the amount of lithium added to the solution.
X-ray studies indicate a homogeneous crystal of the same structure as the
initial nickel oxide but with a somewhat smaIler unit cell. The reaction
resulting in this product can be represented as
10 14
10 12
E
u
10
E
u
I
.c:
.s 10 8
.c:
2~
.;;
10 10
10
.i':'
':;
.~
:;:;
Vl
';
Q)
cr
';
<V
Cl::
10- 1 L-....L_L.--L_L.---'--_l....-~
O
5
10
15
Atom per cent Li +
(17.78)
The formation of ions of increased valency (Ni3+) is promoted by the
introduction of lower-valence ions at normal cation sites.
In order to obtain this result, it is necessary that the ion have nearly the
same size as the ion being substituted, and furthermore the ion must have
a fixed valency. The second ionization potential of lithium is more than
twice as large as the third ionization potential of nickel, so that this
condition is satisfactorily fulfilled in the LizO-NiO system.
In the same way the insulating characterstics of nickel oxide can be
improved by the addition of a stable trivalent ion such as Cr3+ in solid
solution. The effect of adding trivalent ions to the lattice is to decrease the
fraction o Ni3+ ions which forms. Since electron transfer between Ni2+
and Cr3+ does not occur, the overall conductivity is substantiaIly decreased.
Hematite. The same result can be obtained in a number of other
systems of both n-type and p-type semiconductors. For example, FeZ03
is an n -type semiconductor in which oxygen ion vacancies are formed
along with electrons that tend to be associated with specific cations. This
is equivalent to forming a certain fraction of Fez+ ions. If Ti4+ is added to
FeZ03 in solid solution, an increased fraction of the Fe3+ is forced into the
Fez+ state-a number equal to the Ti4+ additions. As a result, the
conductivity of the product is substantially increased; it is determined
primarily by the concentration of titanium oxide added and is much less
dependent on oxygen pressure and firing conditions than is the pure
material. Variations of conductivity with additions of LizO in NiO and
.
TiO z in FeZ03 are illustrated in Fig. 17.36.
Spinels. Another method of obtaining semiconductors with a controlled resistivity and avoiding difficulties due to stoichiometry deviations is
by forming solid solutions of two or more compounds of widely different
conductivity. In particular, it is found that magnetite, Fe304, is an
1 L-L-L-'---L-L-JL-JL-JL-J---l
O
0,5
1.0
H
(b)
(a)
Fig. 17.36. Effect o (a) added LizO on the conductivity o NiO and (b) added TiO z on the
conductivity o FezO" From K. Lark-Horowitz, E/ec. Eng., 68, 1087 (1949).
z
exceIlent semiconductor having a specific resistance of about lO- ohm10
cm compared with values of the order of 10 ohm-c~ for most
stoichiometric transition element oxides. Fe304. has a spmel type 0\'"
crystal structure, as described in Chapte~ 2. In. thls str~cture the oxyg~n
ions are nearly on a close-packed cublc lathce; catlOns are partly.m
octahedral sites and partly in tetrahedral sites. The structure of magnehte
can be described by the notation
Fe3+(Fe2+Fe3+)04
(17.79)
which denotes that one-third of the iron ions (all plus th~ee val~nce) are
on tetrahedral sites and two-thirds (both divalent an~ ~nvalent IOns! a~e
on octahedral positions. The good electrical conduchvlty of magnehte IS
related to the random location of Fe2+ and Fe3+ ions on these octahe?r~l
sites so that electron transfer from cation to cation. can take p.lace. Thls IS
best illustrated by the order-disorder transformatlOn occurn?g at a~out
3
z
1200K. Below this temperature the Fe + and Fe + i~ns are distnbuted m ~~
ordered pattern on the octahedral sites; aboye thls te~perature the.
and Fe3+ positions are randomly distributed (order-dlsord~r tr~nsItlons
are discussed in Chapter 6). The effect of this is to substanhally mcrease
....
the electrical conductivity (Fig. 17.37).
In general, a condition for appreciable cond.uchvlt y m the spmel
structure is the presence of ions having mulhple ~alen~e states at
equivalent crystaIlographic sites. The num?er o~ thes.e IOnsz~n Fe3~: can
be controlled by controlling the S~!.9:",s9}~tIonS 10 whlch Fe or Fe ~e
::eI:
/~,-:.>9;\D <'
INTRODUCTION TO CERAMICS
902
I
r
E
u
10
.c
Z'
.;;
~
lO?
';
903
ELECTRICAL CONDUCTIVITY
::
'u
al
o.
(/)
200
2000
-2
----4
10- 4 0:;---'-~_---.L---:--L----!6:--..---L_-L_....L.....:.-L10
1000/r (OK)
~ig:
E
u
E
.c
-8
oS
b
dil~t~d ?y
j-lO
-12
-14
4 5
10
20
25
Fig. 17.38. Reported Iiterature data or the electrical conductivity o aluminum oxide.
From A. A. Bauer and J. L. Bates, Battelle Mem. Inst. Rept., 1930, July 31, 1974.
904
INTRODUCTION TO CERAMICS
905
ELECTRICAL CONDUCTIVITY
Polycrystalline Ceramics
2000
1500
Temperature (oC)
500
200
100
O,.::;::..-=.:;::..----=-.-------,----T---,
-2
-4
E
Singlecrystal Al20a
E
S
-6
..c:
1 6 5 0 0 vec e
-5
I
Eu -6
E
S
-0.2
E
u
1500C
..c:
g1
estIma te
0.15
0.15
0.2
OD
.!2
1400C
-7
~ -8
.!2
Error ~T O
.A. A
3- 6
-8
0.2
.i-
g-lO
u
::J
"O
e
o
~ -12
u
Eu
Cl!
~
O
w -14
-16
0.4
Fig. 17.39. Conductivity isotherms for single crystals of (a) MgO, from C. M. Osburn and
R. W. Vest, J. Am. Ceram. Soc., 54, 428 (1971), and (b) AI,O" from K. Kitazawa and R. L.
Coble, J. Am. Ceram. Soc., 57, 250 (1974).
Fig. 17.40. Electrical conduetivity of our best insulating materials. From A. A. Bauer and J.
L. Bates, Battelle Mem. Inst. Rept., 1930, July 31, 1974).
than 100 to 150 . for electronic conductivity. This means that exce?t for
very thin films or extremely fine-grained samples (less tha.n 0.1 mlcr~n)
the efects of boundary scattering are small compared wlth the lattlce
scattering. Consequently, the grain size in uniform-composition materials
has but Httle efect.
.
However, substantial efects can result from impu~ity concentrat~on
and changes in composition in grain boundaries. Partlcularly for oXIde
materials there is a tendency to form a glassy silicate phase .at t~e
boundary between particles. A number of the mierostructures glven m
Chapter 10 illustrate this clearly. The str~cture corre~ponds to a twophase system, with the minor phase bemg the contmuous ~n~ .. The
resulting conductivity depends on relative values of the conduCtlvltles of
the individual phases. At room temperature the conductivity of both
Temperature (OC)
o
o
0"1
o
o
r--..
o
oIJ)
o
o
rt)
....-4
I"""'i
.......
.......
-1
....
I
E
u
I
S
b
tlD
E -2
907
ELECTRlCAL CONDUCTIVITY
INTRODUCTION TO CERAMICS
906
1 LaCr03
2 Zr02-25% Gd203
3 Zr02-33% LaCr03
4 Zr02-10% YZ03
5 ZrOz-2l% Nd203
6 Zr02-13% La203
7 Zr02
8 Zr03Sr
9 Zr03Ca
-3
,,
lO"
E
u
'" ""
'"'"'" "" ""
'""''" '" "'"
'"'"
'
.<::
.9-
"
"
104
._.- Clay-bonded
90% alumina
---- Corundum
_
- 60% alumina
'" '"
'"
........
'"
........
103 L.L-L...L-....L.....L.-L-L~~~~-;;:;-L.-;;7"-'-;::
1.3
1.2
1.1
1.0
0.9
0.8
0.5
1000/T("K)
(a)
Fig. 17.42.
~"-" "--~'""""""f
90S
INTRODUCTION TO CERAMICS
T(OC)
500
600
800
1000
ELECTRICAL CONDUCTIVITY
909
\\
"'""
\\
\ \
""
"".", \ \
.'\. \ \
""'" \ \
\
\ \
'",
._.~
Chrome-magnesla "
Fused silica
\
lO"
\
\
- - High-purity polycrystalline
magnesia
High-voltage
porcelain
\ \
Temperature (OC)
Fig. 17.43. Decrease in resistivily with ternperature for sorne typical oxide cerarnics
(mostly bonded with a vitreous phase).
\'
10
lO" OL-L.-2-l0-0--'--40LO--J'--6:-LO-O--'--::80:-:0=---''--:-=:-'"-;1~200
\
\
L-...l--L.-L--l.--J--"-'---..L-...L.-L-..l._L---U-...L-....lL-L--J
1.3
1.2
1.1
1.0
0.9
08
103/T(OK)
0.7
0.6
0.5
(h)
l
,
.\
powdered metals that have an oxide coat.ing and a~e compressed at low
temperatures to a high density. The contmuous oXide phase n:eans that
the overall dc conductivity remains low, even though a su~stantIal part of
the material may be present as a metallic conduct?r. T~ls sa~~ sort of
process occurs in silicon carbide heatin? elements, ~n whlc.h a slhca layer
is formed between semiconductor grams. As an mcreasmg amount of
oxide phase develops, the resistivity gradually inc~eas.es. ~ata for sorne
systems in which the microstructure and phase dlstnbutlOn have been
measured are illustrated in Fig. 17.44.
.
.
Particularly for materials such as oxide semiconductors 10 whlch the
equilibrium of a nonstoichiometric composition with t~e atmosphe~e
determines the conductivity to a large extent, substantml changes m
properties can result from different firing conditions and the. extent ~o
which the high-temperature composition is retained on. coohng. R~~ld
cooling rates tend to retain the high-temperature, hlgh-c~nductIvIty
structures. Similarly, dense samples tend to react less on coohng than do
porous samples. Consequently, electrical properties are frequently correlated with porosity, although the effectof porosity i.s in contr~llin? the
kinetics of compositional changes rather than any dlrect contnbutlOn.
ELECTRICAL CONDUCTIVITY
0.0025
Suggested Reading
Eu
I.
0.0020
2.
..c:
:3
0.0015
3.
.o
~
u
::J
-o
0.0010
4.
5.
c:
0.0005
6.
O
O
7.
20
60
80
100
8.
(a)
9.
0.7'-1'-'-1-1--,--,---,---._-,
911
0.6
Problems
~
10.5
17.1.
x
E
Rigdon and Grace* measured the electrical conductivity of single crystals of CaWO.
It can be assumed that t, = I. Given their data:
~ 0.4
(b)
..c:
:3
;; 0.3
.:;
:e
::J
0.2
0.1
90
100
(b)
Fig.17.44. Change in conductivity with composition for (a) phenol-KI emulsions and (b)
pressed copper powder. From P. Grootenhuis et al., Proc. Phys. Soco (London) B65 502
(1952).
'
,
910
*J.
912
lNTRODUCTlON TO CERAMICS
18
(~$)
where E was the applied field, Q was an activation energy, and V o was found to be
essentially independent of temperature over the range of experimentation.
(a) Explain briel1y why stoichiometric NaCI is transparent, whereas crystals
annealed in Na vapor exhibit coJoration.
(b) Explain the motion of the colored region of the crystal under the influence of an
external field.
(e) Based on your explanation in (b), formulate an expression for the migration
velocity v, and identify V o and Q in terms of physically meaningful parameters.
17.5. Plastic deformation of sodium chloride crystals results in crystals with much lower
electrical resistance than undeformed crystals. In addition, the deformed crystals can
be irradiated with X rays, which turn them yellow. Is this due to dislocations or sorne
other defect generated through movement of dislocations?
17.6. The electrical conductivity of VO, is 0.1 (ohm-cmr' at 723K. The diffusion
coefficient of 0'- measured at this temperature is \.0 x 10-" cm'/sec. Calculate the
mobility of 0- and its transference number (density of VO, = 10.5). How do you
interpret this result?
17.7.
Dielectric
Properties
Given that the electrical conductivity of a 40 mole% Na,O-60 mole% SiO, glass
3
is 5 x 10- (ohm-cm)-' at 673c, calculate the sodium ion diffusion coefficient.
(b) What would be the effect of changing the Na,O-SiO, ratio on the electrical
conductivity in this system? Why?
(a)
17.8.
1,
914
D1ELECTRIC PROPERTIES
INTRODUCTION TO CERAMICS
greater resistance to environmental changes (particularly at high temperatures at which plastics frequently oxidize, gasify, or decompose), and the
ability to form gastight seals with metals and become an integral part of an
electronic device. It should be noted that the selection of a particular
. dielectric frequently depends on its ability to be formed as a gastight part
to operate under unusual environmental conditions, on its sitable
thermal-expansion characteristics, on its satisfactory thermal stress resistance and impact resistance, on its ability to be formed into complex
shapes with good dimensional characteristics, and on other characteristics which are completely independent of the electrical behavior but are
essential for the building of practieal devices.
18.1
!I
I
1
Q IIdt
V=-=--
I=C
dV
dt
iwCV
(18.4)
(18.5)
E'
C o- = CoK'
(18.6)
1"0
dI
L dt
(18.7)
(18.1)
le
Electrical Pbenomena
Q=CV
915
(18.8)
1
(18.2)
J-L'-L
'
0
- oK m
L -L
(18.9)
J-Lo
V = Vo exp iwt
(18.3)
Table 18.1.
Quantity
....
Cl'I
C=Q
Conductivity
(J=-
sec 2 couF/kg m 2
[arad
9 X lO ll
c2 (c = 3 X 10 10 cm/sec)
D
E
sec 2 couF/kg m 3
[arad/m
4rr X 9 X 109
e:!
mho/m
9 X 10"
c'2
=-
\Q
Elect;ic charge
)1. =
coul/sec m
amp/m
3 X 10
5
9
coul
coul
3 X 10
coul m
amp sec m
kg m/sec coul
volt/m
coul/m 2
[arad volt/m 2
12rr X 10 5
E"
sec 2 couF/kg m 3
[arad/m
36rr X 10 9
c-
Electric polarization
coul/m
12rr X 10 5
Electric potential
cf>
kg m 2/sec 2 coul
volt
1
3(fQ
l/c
Inductance
L=--
kg m 2/couF
henry
-- X lO- ll
l/c 2
Electric susceptibility
ratio
ratio
Loss tangent
V
dlm/dt
1
K' -
[arad volt/m
-----------"-,-"~-~"-
tan
E"
ij
=,
.---------,
...
.~."".~,,~
l/c
?
,"-,
ratio
ratio
coul m /sec
amp m 2
3 X 10 13
coul/m sec
amp-turn/m
12rr X 10 7
kg/sec coul
volt sec/m =
weber/m 2
1X
l/C
kg m/couF
henry/m
36rr X 10-
ratio
ratio
coul/m sec
amp-turn/m
ratio
ratio
ratio
ratio
kg m 2/sec couF
Magnetic permeability
)1.=-
Magnetic susceptibility
Xm
B
H
Km' -
Magnetization
B
iVI=--H
Q (quality) factor
1
Q=-
Relative dielectric
constant
tan
,
K
=-
10- 6
13
l/c
3 X 10 7
ij
ohm
l/cl
kg m 3/sec couF
ohm-m
-t X
ratio
ratio
EO
Resistance
R=~
Resistivity
p=-
Relative magnetic
permeability
)1.0
\Q
..,J
3 X lO ll
1 X 1O-{
Qd
._.-.'~-------
....
Conversion Ratios
To Change
from RationTo Change from
alized mks
esu to emu
Units to esu
Multip/y by:
Multiply by:
mks Units
Primary
Derived
Symbol
Capacitance
Current density
(J
,
Km
)1.'
=)1.0
X 10- 11
10- 9
1/c 2
918
Lo
INTRODUCTION TO CERAMICS
N 2A L'
d
(18.10)
In these equations L' is the permeability of the medium, Lo the permeability of, a vacuum, and K:" the relative permeability.
Units. A variety of units is used for dielectric and magnetic properties,
and these are sometimes confusing. Three basic sets of units are used. In
the electrostatic-units system (esu), electrical energy is related to mechanical and thermal energy in the cge system by Coulomb's law for the force
exerted between electric charges. The dielectric constant is arbitrarily
taken as a plain number. In electromagnetic units (emu) the permeability
is taken as a plain number. These formulations lead to sorne inconsistencies and fractional expressions in dimensional equations; these can be
eliminated by taking the electrical charge as a fourth-dimensional unit.
Thisis done in a rationalized system in which for practical units the meter
(m), kilogram (kg), second (sec), and coulomb (c) are used as primary
units. This is called the mks or Georgi system. Several derived units such
as amperes and ohms are used for convenience. In this system the
dielectric constant of free space becomes Eo = (367T )-1 X 10-9 ::=
8.854 X 10- 12 F/m; the permeability of free space is Lo = 47T X 10-7 =
1.257 X 10-6 R/m. Units for a number of quantities of lnterest are collected
and compared in Table 18.1.
Polarization. A dielectric material reacts to an electric field differentIy
from a free space because it contains charge carriers that can be
displaced, and charge displacements within the dielectric can neutralize a
part of the applied field. Since V = QJC and C = K'Co, we can write for a
capacitor containing a dielectric
QIK'
V=--
Co
D =
EoE
+P
= E' E
(18.13)
NL
= E'E -
EoE::= Eo(K'
-1)E
(18.15)
=K'-l=~
EoE
(18.16)
(18.12)
where the polarization is the surface charge density of the bound charge,.
equal to the dipo1e moment per unit volume of material:
where N is the number of dipoles per unit volume and L is the avera~e
dip le moment. The electric dipole moment correspo.nds to tw.o electnc
Chjarsof opposite polarity Q separated by the dlstance d.
L = Qd
(18.14)
(18.11)
That is, only a fraction of the total charge, the free charge QI K', sets up
an electric field and voltage toward ti/e outside; the remainder, the bound
charge, is neutralized by polarization of the dielectrico We can schematically represent (Fig. 18.1) the total electric flux density D as the sum of
the electric field E and dipole cha~P-:--'-"-'----'--
920
INTRODUCTION TO CERAMICS
M""
E7
~
------'__
.1
Ele
El
El
P bound
charges per
Un!1 area
$E7
,
'8:
El
tP
}------/
,,-
/EBEB
/3:'3
/E!
EEl
921
"'71 _
~~
m
i9 E7
DlELECTRIC PROPERTIES
E'=E+E,+E 2
(18.19)
.'
(18.20)
The contribution to the field arising from individual molecular interactions can be assumed equal to zero if they are arranged either in complete
disorder or in a symmetrical array. Using this assumption, first made by
Mosotti, we obtain for the local field
E' = E
+~=~(K'+2)
3Eo
(18.21)
By inserting this local Mosotti field into Eqs. 18.16 and 18.18, we obtain a
relation between the polarizability per unit volume Na and the relative
dielectric constant K I
Na K'-1
3Eo=K'+2
(18.22)
Fig. 18.3.
922
INTRODUCTION TO CERAMICS
No field
Field applied
Electronlc poJarization
-E
Atomic polarization
~.~
Orientation polarization
88888
88888
88088
88808
88888
8888e
08888
80888
923
DIELECTRIC PROPERTIES
+ al + Xo + x,
(18.24)
aspa ce charge
/,
:oro
____ +d:l~
.!:!
ro
oo..
{i:i"-
.'-. -/
_
aeletronic
100
10 2
10 4
10 6
10 8
10 10
10 12
10.j
10
16
10 lB
Frequency
Fig.18.5.
924
INTRODUCTION TO CERAMICS
DIELECTRIC PROPERTIES
processes are able to follow an applied high-frequency field and contribute to the dielectric constant at frequencies up to the infrared region of
the spectrum. Orientation and space charge polarization have relaxation
times corresponding to ~ particular system and process but, in general,
participate only at lower frequen6es.
The rate of heat generation in a dielectric is proportional to the product
of voltage and current and is zero for an ideal dielectric but has sorne
appreciable value for any dielectric with a finite response time.
For the situation depicted in Fig. 18.6, the variation of polarization with
time parallels the variation of charge with time. These variations can be
represented by simple physical models. During charging, for example, if
the rate of change of the polarization with time is assumed proportional to
the difference between its final value and its actual value
Vollage
Time _ _
Time _ _
(18.27)
(18.25)
(18.26)
vb Ql2L
Current
925
(18.28)
= K"E
(18.29)
one obtains
K =
Kse-
iB
= Ks(COS 8 - i sin 8)
(18.30)
Time _ _
(a)
"
K' -
.,')
= -E" = -1(,
E - lE
.
IK"
Eo
(18.31)
Eo
Ks
COS 8
(18.32)
K" =
Ks
sin 8
(18.33)
K'
and from Eqs. 18.32 and 18.33 the loss tangent is given by
r'-,
tan 8 = K")K' =
Time--;.-
Fig. 18.6. Schematic behavior of charge buildup and current flow in (a) an ideal dielectric
and (b) a real dielectrico
E"/E'
(18.34)
926
D1ELECTRIC PROPERTIES
INTRODUCTION TO CERAMICS
. , + WE ") -Co V
( !WE
Eo
. C oK V
=!W
(18.35)
W = 27TE'
per cycle
(18.36)
V
O'T
= WE
11
V0
T
= WI;
V0 2
T tan 8
V0 2
= 27TfE' Ttan 8
(18.37)
. ,Co
. CV = tWf
= tW
T V
------~
l = GC = we" Co V
l = le tan {;
'o
927
_
E
-.
Eoo
+ Es - Eoo
1 + iWT
(18.38)
DIELECTRIC PROPERTIES
929
e$ -
-----=::::--------KW=O
t an
and
c:
.g
-@
K~=oo
----------=::::"",
Ci
WK " -
KO' - KOC:
---T-
-----------:=;;000-------
3'"
.io
:~
::J
"O
c:
"
'"
(;
K max
-o
KO'-K oo'
- -2- ----,......-----
~
VI
VI
...J
Frequency, w =27rf _ _
Fig: 18.8. Rela~ation spectra of relative dielectric constant, conductivity, ;nd loss factor for
a simple relaxatlOn pwcess with a single relaxation time.
1+
W 2T
(18.39b)
E"
(E. - Eoo)WT
=,=
E
E. + EooW T
2
(18.40)
Equations 18.38 to 18.40 are often termed the Debye equations. The
frequency dependence of E' and E" have been illustrated by the curves for
K' and K" in Fig. 18.8. The Debye curves for dielectric dispersion E' and
absorption E" are symmetric about WT = 1. The maximum of the absorption curve and the midpoint of the dispersion curve occur at a frequency
given by W max = l/T, and the half width A log WT of the absorption curve is
approximately 1.14 decades in frequency.
The Debye equations are based on the assumption that the transient
polarization can be represented by a simple exponential with a single
relaxation time. Hence any model which predicts a simple exponential
rise of polarization on applying a field will in an ac field lead to dielectric
dispersion and absorption curves of the form given by Eqs. 18.39 and
18.40. For most materials, however, the experimental data are not well
described by the Debye equations. Rather, the dispersion of the dielectric'
constant occurs' over a wider range of frequency, and the absorption
curves are much broader and flatter than shown in Fig. 18.8.
These differences from single-relaxation-time behavior are generally
associated with the fact that in condensed phases the environments of
different ions are not aH identical. Even in crystals, the magnitudes of the
interactions between ions and of the thermal fluctuations are not identical
for aH places and aH times. Hence it seems reasonable that a spread of
relaxation times, distributed about the most probable relaxation time, is
observed in experiments. The greater variation in the environments of
different ions in glasses relative to crystals can be used to explain the
broader distributions of relaxation times usually required to describe
relaxation phenomena in amorphous materials. A sharp dichotomy between crystals and glasses should not, however, be suggested. Even in
crystals a distribution of finite width should 'be expected, and in fluid
liquids, behavior closely similar to that piedicted by a single-relaxationtime mode! is observed.
For a distribution of relaxation times, Eq. 18.38 becomes
E
928
"
(18.39a)
(E. - E~)WT
"
E
.l!!
VI
oo
= Eoo + 1 +WT
.=
E~ + (E. - E~)
l~ G(T) dT
o
1+
IWT
(18.41)
930
DlELECTRIC PROPERTIES
INTRODUCTION TO CERAMICS
(18.42)
Table 18.2.
931
Porosity:
No liquid penetration at 10,000 psi pressurc
Thermal stress resistance:
Type A-withstand 20 cycles from 100C into 0 water
Type B-withstand 5 cycles from 100C into 0 water
Transversc strength:
Greater than 3000 psi
Dielectric strength:
Greater than 180 volts/mil
Dielectric constan t:
Less than 12 after 48-hr water immersion
Loss factor (K' tan ) :
Grade L-1
<0.150
L-2
<0.070
L-3
<0.035
L-4
<0.016
L-5
<0.008
L-6
<0.004
933
INTRODUCTION TO CERAMICS
DlELECTRIC PROPERTIES
and lower frequencies is in the range from 5 to 10, indieating that about
one-third of the polarizability usually corresponds to electronic processes for silicate structures. For high-index-of-refraction materials the
electronic polarizability is increased. For example, for barium oxide, K~
equals n 2, whieh equals 4, whereas the measured die1ectric constant is
about 34; that is, for these high-dielectric-constant materials ionic contributions overshadow the electronie part. In contrast to ionie crystals,
completely covalent structures have no mechanism for ionie polarizability. This is illustrated in germanium, for example, in whieh K ~ = n 2 = 16.
Similarly, dielectrie measurements at low frequencies give K' = 16.
Ionie Polarizability. The ionic polarizability arises from the displacement of ions of opposite sign from their regular lattice sites under the
inf!uence of an applied field and also from the deformation of the
electronic shells resulting from the relative displacement of the ions.
For ions that can be treated as hard spheres, the dipole moment per
molecule is ze (0+ - 0-), where ze is the ionic charge and 0+ and 0- are the
displacements from equilibrium positions. For the sodium chloride structure the volume per molecule is 2a 3, where a is the nearest-neighbor
distance. It can be shown that for the sodium chloride lattice in a uniform
external field E, the ion displacement is given by
932
o~ - o:'" = ze~
Po
(J..._J...)
m M
(18.44)
K"
Tan = Material
LiF
MgO
KBr
NaCI
Ti0 2 (11 e-axis)
Ti0 2 (..Le-axis)
AbOJ (11 e-axis)
AbOJ (..L e-axis)
BaO
RCI
Diamoml
Mullite
Mg 2Si0 4 (forsterite)
Fused silica glass
Vycor (96 Si0 4 4 B 20 J) glass
Soda-lime-silica glass
High-lead glass
K'
9.00
9.65
4.90
5.90
170
85.8
10.55
8.6
34
4.75
5.68
6.60
6.22
3.78
3.85
6.90
19.0
K'
0.0002
.0003
.0002
.0002
.0016
.0002
.0010
.0010
.001
.0001
.0002
.0003
.0001
.0008
.01
.0057
as the magnitude of these values increases. The ratio K '/ K ~ is about 2.5 for
sodium chloride and about 8.5 for barium oxide. Room-temperature
dielectrie constants for a number of single crystals and glasses of interest
for ceramics are collected in Table 18.3.
Ion Jump Polarization. Orientation polarization effects are of decisive
importance in liquids such as water and in molecular solids and gases, but
they are not of major concern for ceramic systems. They occur in glasses
and crystals when two or more equivalent positions for an ion are present.
This is perhaps most clearly illustrated for crystalline solids by the
association between a lattiee vacancy and an ion of greater valence than
those normally present in the lattice. As discussed in Chapter 4, fpr
example, additions of small amounts of calcium chloride to a crystal of
KCI lead to increased concentration of cation vacancies. There is a
tendency for the Ca2 + ions in these crystals to be associated with a
positive ion vacancy, and the associated pair has a dipole moment. When
an electrie field is applied, the Ca2 + and the vacancy can exchange
positions by a simple jump of the cation to a neighboring position. This
934
INTRODUCTION TO CERAMICS
DlELECTRIC PROPERTIES
Fig. 18.9. Reorientation o a lattice vacancy pairo Other crystal deect pairs give similar
results.
kind of process is shown schematically in Fig. 18.9. The average polarizability per particle resulting from this process is given by
aJ =
1
1+
iWT
(zed)2
kT
(18.45)
where d is the distance between the two atom positions, ze is the ion
charge, and T is the relaxation time for the jump process. Then for the
complex dielectric constant, K' = K' - iK", we have
(18.46)
where n is the number of ion pairs, N is the number of ions per unit
volume, and Eo equals 8.85 x 10- 12 F/m.
A similar effect can arise in glasses when there are multiple sites
available to a modifier ion whieh cannot contribute to the observed dc
conductivity. This is schematically illustrated in Fig. 18.10, whieh shows
two equivalent positions in which the modifier ion can reside; charge
displacement Occurs by an atom jump rather than movement about an
equilibrium position.
These effects in crystals are not normally observed at room temperature but can be used as a sensitive tool for investigating relaxation
t
~
Q)
935
Position co-ordinate - -
*
936
>
t-u;;*trt.,
INTRODUCTION TO CERAMICS
DIELECTRIC PROPERTIES
When the high-temperature data are plotted against frequency, they give
an apparent dielectric constant increasing at low frequencies as a result of
electrode polarization. ConsequentIy, they are not solely a material
property but also depend on the electrodes used for measurements and in
applications.
18.3
937
a. Dc conductivity losses
. b. Ion jump and dipole relaxation losses
2. Ion vibration and deformation losses
3. Electron polarization losses
Fi.g. 18.11. Effect oC Crequency and temperature on the dielectric constant oC an AlzO, crystal
wlth field normal to the e axis.
20 r - - - - - , - - - - , - - - - - - - - - - - ,
".... 5 X 10 2 cycles/sec
'" 15
...
lO!
WE 11
Ul
= cr = WE' tan o
(18.47)
u
u
or
~1O
a.>
a:;
'6
a.>
>
+'
~
a.>
et::
0:---~=----,-L-:---.....-l---.....J
200
Temperature
400
ce)
Fig. 18.12. Effect oC Crequency and temperature on the dielectric constant oC a soda-limesilica glass. From M. J. O. Strutt, Arch. Elektrotech., 25, 715 (1931).
cr
cr
tan 8 = 27TfK' Eo = (8.85 x 10 14)(27Tf)K'
(18,48)
938
INTRODUCTION TO CERAMICS
= To exp
(k~)
10 4
Fig. 18.13.
10 6
10 8
Frequency (cycles/sec)
(18.49)
where To is the period of atomic vibrations, of the order of 10- 13 seco The
value of the activation energy caQ vary considerably, but if it is similar to
that for ionic migration processes, it is in the order of 0.7 e V, giving a loss
maximum over a spectrum range corresponding to 103 to 106 Hz, a region
. of particular concern for many dielectric applications.
Ion vibration and deformation losses become important at room
temperature only at frequencies in the infrared corresponding to 10 12 to
10 14 Hz. This is beyond the range of frequencies that are normaHy of
concern for electronic applications. These processes begin. to become
apparent in the higher-frequency measurements, 10 10 Hz.
The total value for tan o is the sum of individual contributions already
discussed. At room temperature the resulting curve for a glass or a crystal'
having considerable impurities or defects is as illustrated in Fig. 18.13. At
lower frequencies conduction losses become important, at moderate
frequencies ion jump and dipole losses are most important, at intermediate frequencies dielectric losses are small, and at sufficientIy high
frequencies ion polarization effects give energy absorption.
For reasonably good insulators (Chapter 17) the conductivity increases
exponentially with temperature. ConsequentIy, for this process we would
expect tan o to increase exponentially with temperature, as indicated in
Eq. 18.48.
A significant part of the increase in tan o of the soda-lime-silicate
glasses indicated in Fig. 18.14 corresponds to conduction losses. These
losses are directIy related to the dc conductivity of the glass. Such
conductivity gives rise to currents w.hich in an ac field are in phase with
the applied voltage and hence caus~ die1ectric losses which are indepen-
10,..-----.,-----,------,-----,------,
Fused silica glass
1.0
0.1
0.01
0.001
0.0001
L -_ _..-.J
100
--l
---'-
200
300
Temperature ("e)
--'-
400
-'
500
Fig. 18.14. Increase in tan : with increasing temperature for a soda-lime-silica glass and for
fused-silica glass.
939
940
tan 0= wRe
0.08 r - - - - , - - - - , - - - - - , - - - - - ,
0.07
~..,..-...----.......-.....
l'i4C
0.05
(18.50)
*J.
941
DlELECTRIC PROPERTIES
INTRODUCTION TO CERAMICS
0.03
0.02
0.01
O l -_ _- L ,_ _- L_ _- - ' - : - _ - - - '
10 2
10 3
10 4
10"
10 6
Frequency (cycles/sec)
(a)
10
10 2 L......L--L_L..-L........L-l_.L-~-...l.~
2.0
2.4
2.6
3.0
1000/T (OK)
lb)
Fig. 18.15. Tan [) versus frequency at different temperatures and log W m . . versus liT for
Georgia kaolin. From J. Van Keymeulan and W. Dekeyser, J. Chem. Phys., 27,172 (1957).
K+ > Rb+, and the dielectric losses follow in the same order. For example, a
glass composition consisting of 53.3% Si02, 32% M20, 10.2% PbO, and
6
4.5% CaF2 gives values for tan o (at 1.5 x 10 Hz) of 0.0132 for lithium,
0.0106 for sodium, and 0.0052 for potassium. In general, a substitution O
large divalent ions such as barium oxide or lead oxide for the alkalis
allows the formulation of reasonably low-melting glasses which have low
values for tan O. Glasses with 20 to 30% BaO or 30 to 50% PbO have
values of tan o as low as 0.0005.
In addition to the use of divalent ions alone as modifiers, they are
effective in small amounts as blocking ions; they prevent the easy
942
INTRODUCTION TO CERAMICS
DIELECTRIC PROPERTIES
mobility of alkali ions by filling up critical sites through which the alkali
ions would normally pass. This is illustrated in Fig. 18.16 for the change in
0.012
"
943
12
0.1
0.Ql0
10
K'
'<:l
)o
0.008
'"...c:
oS
0.01
1-
Lime-alumina-silica
~
c:
o
'<:l
0.006
1-
Potash-Iead-silicate
0.001
'"
Qj
'i:i
0.004
Vycor
96Si0 2 -4B 2 0
'">
:;:;
ro
Qj
ce
0.002
0.0001 L--L_--L_L----.L_--L_L----L-:---'-::_-'-:-::----'-:-:--'
10 10 2 10 3 10 4 10 5 10 6 10 7 10 8 10 9 10 10 10 11 10 12
Frequency (cycles I sec)
2
Fig. 18.17.
O
O
o for
32
32
24.9
17.8 14.2
-MgO(%)
7.1
25
DlELECTRIC PROPERTIES
945
188C
141C
20
\
15
'",
84C
10
1: 00 -----;..
------------
20
15
'"o
159C
80C
'~Ir
10
'"
121C
laglO frequency
Fig.18.18. Dielectric dispersion and absorption curves, corrected for dc conductivity for a
typical soda-lime-silicate glass. From H. E. Taylor, 1. Soco Glass Technol., 43, 124 (1959).
, I-!
~I
... Glass
Glass
Glass
... Glass
'"
1
4
18
19
Es -
Ero
= Ero + (1 +WT
. )13
(18.51)
o Pyrex
no 2
18.4
.!2
:3
7
Fig. 18.19. Reduced die1ectric loss curves for several glasses. Glass 1, 0.12NazO'88SiO z ;
glass 4, 0.24Na zO0.76SiO z; glass 18, 0.IONazO0.20CaO0.70SiO z ; glass 19, O.18Na zO'
O.IOCaOO.72SiO z From H. E. Taylor, 1. Soco Glass Technol., 43, 124 (1959).
944
Dielectric Conductivity
The dielectric loss phenomena discussed in the last section can also Qe
described as an ac conductivity of solids. This is in accordance with Eq.
18.47, which defines the dielectric conductivity as u = WE". As illustrated
in Fig. 18.8, this part of the conductivity increases as the frequency is
'"1. Am. Ceram. Soc., 46, 235 (1%3).
946
INTRODUCTION TO CERAMICS
DIELECTRIC PROPERTIES
947
Temperature (OC)
10 11 l'i2;::5::1-....:5r:-0 T __-r-IOrO_,--=:15r0-,-_:;:20~0--,.;25~0-.:3~0~0~35~0-:4~00~45~O~
-"'h...~
A-e 60
e+~""'1
11
11
(l8.53)
ID 10 r--,,;;;;;::::t--+----i:---f---f---+--+-----+---l
~~(~
10 9 r---t--+---:::~~"'i:;_--_j__-__+--+~-I---~
~~
~ 10
"
(l8.54)
VK n
eyeles/sf~
~ 1081--t--t---+--J-t--~'~~'lsl---+--+---+--~
= LJ
A-e 2000
r----------t---t--+---fl- "--.::'tkl----t----1---1
~~
10 6
r---t--+-~_--+--_j__--+I-""-~-J--.--j---l
~
1\\
I Overhealed
1\
105,~---L--~----.L--_!_;__--L--~---l.1- ~...::!:---! __
~
1000/T (OK)
l
'1
(a)
(b)
948
INTRODUCTION TO CERAMICS
DIELECTRIC PROPERTIES
and we have
log
Vi
log
(18.55)
K'=
,(23+ K~) +
(i + 3:~) +
VmK m
Vm
km'
949
VdK~
(18.56)
Vd
120 r---,---,----,---,---,----,----,---,----,--,
100
'",
-i 80
2
'"e
u
u
{ 60
ID
ID
"O
ID
>
~ 40
ID
a::
O:--L.-L_--L---L_L--L........l_..l--L..-l
O
0.2
0.4
0.6
0.8
Volume Iracton 01 high K' phase
1.0
Fig. 18.22. Expressions for the resultant dielectric constant of various mixtures of two
dielectrics.
20
0'-="-'----'--'---::-'-:---'--'---'---:'-::--'--_:_'
O
~
M
~6
1~
Volume fraction TiO z
Fig. 18.23. Comparison of experimental data with theoretical expressions for dielectric
constants of two-phase mixtures.
18, 84 (1939).
950
INTRODUCTION TO CERAMICS
DIELECTRIC PROPERTIES
no~mally encountered. Using the simpler Eq. 18.53 has been found
satIsfactory for most purposes. If the solid phases and their distribution
and individual dielectric constants are known, these can be combined in
an appropriate way and then corrected for the volume fraction porosity
present. In Fig. 18.24 the dielectric constant of a polycrystalline TiO z is
shown to .decreas~ wit~ increasing porosity. I~ sorne of these samples a
decrease.m poroslty wI.th increased firing time was observed, indicating
lhe opem~g of flato gram-boundary cracks resulting from the boundary
stresses dlscussed m Chapters 5 and 12. The variation in microstructure
among samples is clearly illustrated in the range of values found for any
.
particular porosity.
951
"i
'"
Vi
120 r---r--,---,--,.--'---r--,
10
E
u
<lJ
"O
<lJ
>
::
100
'"
o::
OL-_ _.L--_ _. L -_ _. l . -_ _. l . - _ - - - l
"
'"
't
e
o
u
u
.:;
<lJ
""
~
<lJ
:E
.!'!
<lJ
o::
1-
0.1
40
0.01
20 -
100
200
300
Temperature (OC)
500
Fig.18.25. Die1ectric constant and tan S or a steatite ceramic over a range o temperatures
and frequencies.
INTRODUCTION TO CERAMICS
DIELECTRIC PROPERTIES
l S r - - - - - - - - - - . -_ _. - _ - - ,
-'
e
ro
<n
e
o
u
u
10
.::
U
Q)
~
"
Q)
;>
::;
ro
Qj
o:::
O'-----'----L-_.....L._ _.L-_--l
<o
0.01
0.001
0.0001 ~---:=--_::_:_::__--l---.L.-_--..-J
O
200
300
400
SOO
Temperature (oC)
Fig. 18.26. Dielectric constant and tan 8 for an alumina porcelain over a range of
temperatures and frequencies.
dielectrics with a dielectric constant aboye 12, and (3) ferroelectric and
ferromagnetic ceramics. A large part of the first group consists of lowand high-tension electrical insulators composed primarily of triaxial
porcelain mixtures of clay, f1int, and feldspar. These insulators are
inexpensive and are easily manufactured; for high-voltage applications
the water absorption must be zero in order to ensure high dielectric
strength and also high mechanical strength. This is less important for
~o~-tension applications, and although increased vitrification usually
mdlcates better quality, it is more expensive to achieve in manufacturing.
A second group of materials in this c1ass is high-temperature porcelains
used as supports for electrical heating elements; these must be free from
defor~ation under mechanical loads and have a high resistivity at high
o~e~atmg temperatures. For these, the glassy phase must be kept to a
mlmmum, and more or less porous products are generally used. A special
~53
and important application is as spark plugs for high-compression automobile and aircraft engines. These have high thermal and electrical
stress resistance and operate at temperatures near 1100C. High-alumina
porcelains have been found most satisfactory.
For applications as high-frequency insulation, vitrified products are
required which are dimensionally stable, have good mechanical strength,
and have a low loss factor. Requirements and c1assifications for these
materials have already been indicated in Table 18.2. Many difierent
compositions are used for different applications. Low-loss steatite is the
most widely used; it is unsurpassed for economy in manufacture, since a
large fraction of tale, which is soft, readily formed, and does not cause
excessive die wear, is used as a raw material. The resulting product
consists of clinoenstatite, or one of its polymorphic forms, in a glassy
matrix. Steatite bodies usually have a loss factor corresponding to class
L-3 toL-5. For lower dielectric losses, forsterite ceramics having Mg 2 Si04
as a main crystalline phase are frequentIy used. A1kaline earth oxide
fluxes are used to give excellent dielectric properties. The high expansion
coefficient is detrimental for thermal shock but is an advantage for
forming metal ceramic seals, since it provides a good match for sorne of
the nickel-iron alloys. Other crystalline phases used for low-loss applications are zircon, ZrSi04, and cordierite. Both of these materials have low
expansion coefficients and consequentIy exceptionally good thermal
shock resistance.
Sorne typical applications and property descriptions of a number of
ceramic dielectrics are listed in Table 18.4. In Table 18.5 the batch
compositions to form sorne of these are illustrated by means of typical
examples.
Space Charge Polarization. Polycrystalline and polyphase aggregates
exhibit an interfacial or space charge polarization arising from differences
between the conductivity of various phases presento This polarization
resulting from heterogeneity is particularly important for compositions
such as ferrites and semiconductors in which the electrical conductivity is
appreciable; also for polycrystalline and polyphase materials at higher
temperatures. This manifests itself as a high dielectric constant and
causes a peak in the loss factor.
If we have two layers of material of different conductivity present, as
schematically illustrated in Fig. 18.21a, motion of the charge carriers
occurs readily through one phase but is interrupted when it reaches a
phase boundary. This causes a buildup of charges at the interface which,
to an outside observer, corresponds to a large polarization and high
dielectric constant. Electrically the actual system resembles an equivalent
circuit for series layers illustrated in Fig. 18.27a, but the macroscopic
Table 18.4.
Material-.
Porcelain
6
Lithia
Porcelain
7
Titania, Titanate Ceramics
Higb-Frequency
Insulation.
Ceramic-toMetal Seals
SparkPlug Cores,
High-Volt.ageHigh-Temperature Insulation
Ceramic
Capacitors,
Piezoelectric
Ceramics
2.5-2.7
0.0
2.7-2.9
0.0
3.5-3.8
0.0
2.34
'0.0
3.5-5.5
0.0
5.5-8.1 X lO"
1350-1500
8.6-10.5 X lO's
1000-1100
11 X lO"
1000-1100
3.5-5.5 X lO"
1000-1200
I X lO"
1000
7.0-10.0 X 10--<1
O. 007-{). 05
8000-30, 000
80,000-250,000
20,000-45,000
O. 5-{). 7
15-52 X lOs
Excellent
0.005-{).006
8000-10, 000
65,000-130,000
16,000-24,000
0.3-{).4
13-15 X 10'
Moderate
0.005-0.010
8000-10, 000
60,000-100,000
18,000-20,000
O. 03-{). 04
13-15 X lOs
Poor
0.010-{).015
10,000-15,000
80,000-150,000
20,000-35, 000
0.4-{).5
20-30 X 10'
Good
250-400
200-350
200-300
10 13_10 15
450-1000
0.0008-{).0035
5,5-7.5
W-L-5
10 13_10 15
above 1000
0.0003
6.2
1.,.6
1
High-Voltage
Porcelain
2
Alumins.
Porcelain
5
Zireon
Steatite
Forsterite
Power Line
In.ulation
8parkPlug Cores,
Thermocouple
Insulation,
Protection
Tubes
Higb.Freq uency
Insulation.
Electtical
App!iance
Insulation
2.3-2.5
0.0
3.1-3.9
0.0
5.0-6.8 X lO"
1000
O. 002-{). 005
3000-8000
25,000-50,000
9000-15,000
O. 2-{). 3
7-]4 X lOs
Moderately good
-\Q
ti>
~.
25D-400
Te-value (OC)
Po..er raetor at I Me
DicleC'tric constant
L-grade (JAN Spee. T-IO)
ti
..
_..
U 1
IO '10 '
500-800
0.001-{).002
8-9
Ir2-L-5
10 1'_10"
200-500
O.006-{).010
6.0-7.0
L2
temperature
60,000
8000
0.3
Exeellent
200-300
250-350
10 13_10 15
700-900
0.0006-{).0020
8.0-9.0
lA
0.05
5.6
1.,.3
-------
- - - - - - - - - . - - -----------
_ _ _ _ _ _ _r -
Mterial-.
Typical Applications-t
Properties
\Q
50-200
108.lOl.I
200-400
0.0002-{).OSO
15-10,000
~,._~~("
ti>
ti>
0.008-{).01
4000-10,000
40,000-120,000
10,000-22,000
0.3-{).5
10-15 X 10'
Poor
10
Alumina, Alumi
num Silicate
Refractories
11
Massive Fired
Talc.
Pyrophyllite
Lo..-Voltage
Porcelain
Cordierite
Refractories
Switch Bases.
Lo..-Voltage
Wire Holders,
Light
Receptac1es
Vacuurn
Spacers, HighTemperature
Insulation..
High-Frequeney
Icsulation,
Vacuum Tube
Spacers, Ceramic
Models
2.2-2.4
0.S-2.0
1.6-2.1
5.0-15.0
2.2-2.4
10.0-20.0
2.3-2.8
1.0-3. O
5.0-6.5 X lO"
900
2.5-3.0 X lO"
1250
S.0-7.G X lO"
1300-1700
11.5 X lO"
1200
0.004-{).005
1500-2500
2S, 000-50, 000
3500-6000
0.2-{).3
7-10 X lO'
Modera!e
0.003-{) .004
1000-3500
20, 000-4S, 000
1500-7000
0.2-{).25
2-5 X lO'
Exeellent
O. 004-{). 005
700--3000
15,000-60, 000
1500-6000
0.17-{).25
2-S X 10'
Execllent
0.003-{).OOS
2500
20,000-30.000
7000-9000
0.2-{).3
4-5 X 10'
Good
40-100
40-100
80-100
40-100
10 12 _10"
10 1'-10"
10 1'-10"
400-700
0.0002-0.010
4.5-6.5
10 12 _10 15
600-900
0.0008-{).OJO
S.0-6.0
300-~00
O. 010-{). 020
6.0-7.0
~00-700
0.004-{).010
4.5-5.5
---._----------~_...-.-_---.._-----~
956
DIELECTRIC PROPERTIES
INTRODUCTION TO CERAMICS
Table 18.5.
Tale
BaF z
BaH elay
Bentorite
BaC03
Mg(OH)z
Zireon
Al z0 3
Firing tcmpcraturc (oC)
Relative dielectric constant,
84
Forsterite
71.3
10
3
3
2.6
ZireonTale
Alumina
Poreelain
32
5
7
3
l~
6.8
19.5
957
53
K'
1330
6.5
1250
6.6
1325
7.51
95
1600
10" . - - - - - , - - - . - - - , - - - , - - - , - - - - - - - , - - ,
8 .Ve
ab
= 20,000
T2
= abT]
1O~
E
u
I
I:
.s
E
(a)
(b)
10
The geometrical shape and distribution of the two phases are important,
as has been discussed by R. W. Sillars. * Perhaps the most important
occurrence of this phenomenon is for semiconducting polycrystalline
materials in which the grain boundaries, or a grain-boundary phase, have
a high resistance. Then the structure corresponds to thin layers of
boundary material. If the individual capacitance e1ements in Fig. 18.27 are
considered, the. time constant for current flow in each can be represented
as 'TI = CIR I and 'T2 = C 2R 2. These can be related by the re1ative values of
WT 1
Fig. 18.28.
characteristics.
*J.
958
INTRODUCTION TO CERAMICS
,)
p= P
o
+ po- P~ 2
I~
1 + T/W
= PIP2(K; + XIKD 2
PIK~2+XIP2K~2
00
Tp =
Eo
(18.57)
+ P2
PO= X,PI
[PIPlpIK;2 + XIP2K~2)]1/2
X,PI + P2
X ~
959
DIELECTRIC PROPERTIES
perimental results together with calculations from Eq. 18.59 are illustrated
in Fig. 18.29.
The time constant for this interfacial polarization, and consequently the
frequency at which it becomes important, is proportional to the product
of resistivities, as indicated in Eqs. 18.57 to 18.59. For most dielectrics at
room temperature this product is so large that the interfacial polarization
is negligible even at low frequencies. For semiconductors and semiconducting ferrites this resistivity product is not so large, and the effect is
important at room temperature. For other dielectrics this factor increases
as the temperature is raised. At the same time, the conduction losses and
ion jump losses also increase. (These can in one sense be considered local
space charge polarization resulting from mobility barriers, as illustrated in
2500
K:K~
=--.:...--=...-
K;+XIK~
2
K ,
Eo
+ P2)2
(18.58)
2000
e
o
u
u
.;:
1500
t>
QJ
PIP2(K; + xlKD
X,PI + P2
~---'--'---.:...~
1000
"O
QJ
.2:
(~:r2
X ~
-'
.r3
Vl
K,'+ P2 2 K2
K& = Xlpt
(X,P,
T K'
'",
ro
500
ID
o::
For the structur~ of most c?mmon practical interest, the resistivity of the
boundary layer IS substanhalIy larger than the resistivity of the grain:
2
QJ
20,000
E,
E 15,000
.<::
.2-
10,000
::;
Vl
'Vi
QJ
o::
(18.59)
5,000
10
10 2
10 3
..1.-._ _- '
lO
10 5
Frequency (cycles/sec)
Fig. 18.29. Die1ectric constant, resistivity, and tan 8 for Nio.ZIlo.Fe,. Froro C. G. Koops,
Phys. Rev., 83, 121 (1951).
960
DIELECTRIC PROPERTIES
INTRODUCTION TO CERAMICS
.~
961
to increased lattice vibrations and a resulting increase in electron scattering by the lattice; a greater field strength is required to accelerate
electrons to a point at which an electron avalanche is initiated. In
contrast, the intrinsic die1ectric strength of glasses is independent of
temperature at low temperatures, corresponding to a random lattice
structure in which electron scattering remains independent of temperature. This characteristic of glass structure is similar to the thermal
conductivity behavior (re1ated to the phonon scattering) as discussed in
Chapter 12. At low temperatures solid solutions in crystalline materials
increase the electron scattering and consequentIy increase the dielectric
strength. As the temperature increases, the intrinsic breakdown strength
passes through a maximum at about room temperature, at which for most
insulators sufficient electrons are available for the' characteristics of
avalanche formation to change. The dielectric strength for e1ectronic
breakdown at low temperatures, the intrinsic electron breakdown
strength for glasses and crystals, is of the order of 1 to 10 x 106 V/cm.
Thermal breakdown behavior can be differentiated from intrinsic
breakdown in that it is associated with electrical stresses of appreciable
time duration for local heating to occur, and it takes place at high enough
temperatures for the electrical conductivity to increase. Electrical energy
losses raise the temperature even further and increase the local conductivity. This causes channeling of the current; local instability and break,down result in the passage of high currents with resulting fusion and .
vaporization that constitute a puncture of the insulation.
The effect of time duration and temperature on the breakdown behavior
of glasses depends critical1y on the conduction characteristics, and
consequentIy the composition. In general, intrinsic behavior is usual1y
found below about - 50C, whereas thermal breakdown usually occurs at
temperatures above 150C. At intermediate temperatures the breakdown
characteristic depends on the applied voltage, the time duration of the
applied voltage, and the test conditions as shown in Fig. 18.30. Results for
sorne glasses with different soda content are compared in Table 18.6. It is
seen that the intrinsic low-temperature behavior is nearly independent of
composition, whereas the temperature at which thermal breakdown
begins is strongly dependent on the resistivity and the alkali content of the
glass. J. J. Chapman and L. J. Frisco* have found that the die1ectric
breakdown strength of glasses decreases as the frequency, and conse~
quentIy the dielectric loss and dielectric heating, is increased. Although
for one glass studied, a die1ectric strength of about 1000 V Imil was found
* Elee.
962
963
DlELECTRIC PROPERTIES
INTRODUCTION TO CERAMICS
.
I-~::::===-_::::::::---c::;..:::::::::-,~-==:::::----o-_=---.J;]
Time 5
10- sec
800 ,.-----r--r---r----r----r--~-~
10- 3 sec
..c
1i'e o 6
700
10- 2 sec
~
VI
~ 600
.g 4
tl
QJ
Qj
:0
1 sec
~ 500
30 sec
.c
1i'o
~
.l:;
~6;~0~-:;;~~~---l-;;-....L.-;2~0----l-4;l;:0-l---:~.l-8.l0----l-1.l00--.l~120
400
VI
~ 300
-a
Temperature (C)
-'"
ro
Ji 200
Fig. 18.30. Effect of test temperature and test duration on the breakdown strength of a
pyrex glass. From J. Vermeer, Pllysica, 20, 313 (1954).
100
Table
18.6.
Relationship
between Thermal
Resistivity
Breakdown
and
Electrical
Thickness (mils)
Electrode area
1>'>" by 1>'>"
Tested in oil at
room temperature
Glass No.
2
Intrinsic breakdown
strength, E b (volts/cm)
Critica1 temperature (oC)
Per cent Na20 in glass
Resistivity at 200C
(ohm-cm)
-1
9 X 106
-150
12.8
11.2 X 10 6
-125
5.1
9.2 X 106
-60
3.5.
9.9 X 106
+150
0.9
2 X 10 8
6 X 10 8
1.25 X 10 9
2.5 X 10 14
Firing conditions
1350C 4 hr
1250C 4 hr
Fig. 18.31. Dielectric strength of two titania bodies fired to different densities and tested in
oi! with H-in. x ll-in. electrodes. From G. Economos, in Ceramic Fabrica/ion Processes, W.
D. Kingery, Ed., John Wiley and Sons, N.Y., 1950, p. 205.
at
60 Hz, this had decreased to about a tenth of that in th e megacyc1e
range.
In the same way the testing conditions and electrode design are
important for fixing the measured' dielectric strength, minor hetero-
964
18.7
INTRODUCTlON TO CERAMICS
Ferroelectric Ceramics
965
DIELECTRIC PROPERTIES
3Eo
NaE
1 - Na/3Eo
NalEo
1- Nal3Eo
X=K ' - 1 = L =
EoE
I -
(18.62)
crystalline solids.
.
The result of spontaneous pQlarization at sorne critica! temperature 1!$
the appearance of very high dielectric constants together wi~h ~ h~st~resis
loop for polarization in an alternating field (Fig. 18.32). Thls lS similar to
p
(18.63)
(18.61)
(18.60)
By introducing the Mosotti field (Eq. 18.21) for the.local field: '
E'=E+L
(18.66)
T =NC=NaoT
e
3Eo
3Eo
tan a
=(;)., =(Ki -
_ _ _ _.-L------'L-f---jL----J-L-----E
(18.64)
ao = kT
larger than that for the electronic and ionic portions, a critical temperature is reached at which
N( C)
3Eo = 3Eo kT
Na
Fig. 18.32.
= 1
(18.65)
* J. Am. Chem. Soc., 58, 1486 (1936).
l)E o
966
the hysteresis loop observed for ferrornagnetic rnaterials and results frorn
the presence of different domains in which there is complete alignrnent of
electric dipoles. The boundaries between ferroelectric dornains are crystallographic dornain walls which have a 90 0 or 180 0 orientation in bariurn
titanate. The dornains in a polycrystalline bariurn titanate cerarnic are
illustrated in Fig. 11.30, in which differences in orientation are brought out
by the etching"
'At low field strengths in unpolarized material, the polarization is
initially reversible and nearly linear with an applied field; the slope of the
curve gives the initial dielectric constant K~. At higherfield strengths the
polarization increases more rapidly as a result of switching of ferroelectric dornains, thatis, the changing polarization direction in dornainsby 90 0
or 1800 ; this occurs by dornain boundaries rnoving through the crystal. At
the highest field strengths the increase of polarization for a given increase
in field strength is again less, corresponding to polarization saturation,
having all the dornains of like orientation aligned in the direction of the
electric field. Extrapolation of this curve back to the E = Oordinate gives
P., the saturation polarization corresponding to the spontaneous pt>larization with all the dipoles aligned in parallel.
When the electric fieldis cut off, the polarization does not go to zero but
r,ernains at a finite value called the rernanent polarization Pro This results
frorn the oriented dornains being unable to retum to their original randorn
state without an additional energy input by an oppositely directed field.
That is, energy is required for a change in dornain orientation. The
strength of the electric field required to return the polarization to zero is
known as the coercive field Be.
At low ternperatures the hysteresis loops become fatter, and the
coercive field becomes greater, corresponding to a larger energy required
to reorient the dornain walls; that is, the dornain configuration is frozen in.
At higher ternperatures the coercive force decreases until at the Curie
temperature no hysteresis remains, and there is only a single value for the
dielectric constant. Hysteresis loops for barium titanite, which has a
Curie temperature of about 12SOC, are illustrated in Fig. 18.33. In Fig.
-zf-zf-i--zf--f*
-65C
oc
30C
90C
1I
12
10
\/
~6
.....
4
-17SC
967
DIELECTRIC PROPERTIES
INTRODUCTION TO CERAMICS
0-0-
O
-50
1\~V
1\
-25
25
50
75
100
125
Temperature (C)
120C
Pig. 18.33. The change in barium titanate ferroelectric hysteresis loop shape with temperatUre.
Pig. 18.34. Confirmation of the Curie-Weiss law for a barium-strontium titanate composilion. Prom S. Roberts, Phys. Rev., 71, 890 (1947).
968
INTRODUCTION TO CERAMICS
969
DlELECTRIC PROPERTIES
4.040
4.030
4.020
Vl
23
ID
4.010
ro
Do
4.000
Q;
u
Cubic
3.980
3.970
-150
-100
200
-50
Ti
10,000
Qo
.Ba
'",
.,..;
8,000
Fig. 18.35.
ro
"t
e
6,000
.~
U
ID
a:;
'O
4,000
ID
.>
::;
ro
a:;
cr:
"
2,000
_
q5~0:=::=_~1'!:l0=0~~_=:t:50:::::~~0f~~":::5t::0:::::::='1~0~0----;~--;;;'200
Temperatu re ("C)
(b)
Fig. 18.36. (a) Dimensions of pseudocubic unit cell of BaTiD,. From H. F. ~ay and P.
Vousdan, Phi!. Mag., 7,40, 1019 (1949). (b) Temperature dependence of dielectnc constant.
From W. J. Merz, Phys. Rev., 76, 1221 (1949).
the domains are more effectively oriented, and a higher dielectric constant
results. At the same time, there is a strong temperature dependence of the
dielectric constant, and circuit characteristics change even over a
moderate-temperature range. Fortunately, the temperature depend~nce
and also other properties such as the dielectric constant can be modlfied
by forming solid solutions over a wide range of compositions. In the
2
perovskite lattice substitutions of Pb 2 +, Sr2+, Ca +, and Cd2+ can be made
DlELECTRIC PROPERTIES
Fig. 18.37. Ion positions in tetragonal BaTiD,. From G. Shirane, F. Jona, and R. Pepinsky
Proc. I.R.E., 42, 1738 (1955).
'
8ooo,---,--_ _,---
,--_---,
f,
56l
_____ llOO
'1
I
I
'", 6000
I
I
,
,
...;-
c:
~
c:
u
u
QJ
I
I
~ 4000
~
/\
"O
//
QJ
:>
Qi
o:: 2000
_........ -_/
\.
----
/1
,,/
'o/
...... _ - /
-~0;V0'------;l~00;:;----~0:------lOLO----.J160
Temperature (OC)
970
971
973
INTRODUCTION TO CERAMICS
DlELECTRIC PROPERTIES
972
7.
8.
Problems
18.1.
18.2.
Suggested Reading
1.
2.
3.
4.
5.
6.
A. R. von Hippe1, Dieleetries and Waves, John Wiley & Sons, lnc., New
York, 1954.
A. R. von Hippel, Ed., Dieleetric Materials and Applications, Technology
Press, Cambridge, Mass., and John Wiley & Sons, lnc., New York, 1954.
Eneyclopedia of Physies (Handbueh der Physik), S. Flgge, Ed., Vol. 17,
Dielectrics, Springer, Berlin, 1956: (a) W. F. Brown, "Dielectrics," pp.
1-154; (b) W. Franz, "Dielectrischer Durchschlag" ("Dielectric Breakdown"), pp. 155-263; (e) P. W. Forsbergh, Jr., "Piezoelectricity, Electrostriction and Ferroe1ectricity," pp. 264-392.
E. J. Murphy and S. O. Morgan, "The Die1ectric Propeties of Insulating
Materials," Bell Sys. Teeh. J., 16, 493 (1937); 17, 640 (1938).
J. M. Steve1s, "The Electrical Properties of Glass," Handbueh der Physik, S.
Flgge, Ed., Vol. 20, Electrical Conductivity n, Springer-Verlag, Berlin,
1957, pp. 350-391.
W. Kanzig, "Ferroelectrics and Anti-ferroe1ectrics," Solid State Physies, F.
Seitz and D. Turnbull, Eds., Vol. 4, Academic Press, lnc., New York, 1957,pp. 5-199.
18.3.
18.4.
18.5.
18.6.
18.7.
In general, glasses used as dielectric insulation are low in alkali content and high in
alkaline earth or lead content.
(a) What are the properties desirable for dielectric insulators?
(b) Why are low-alkali glasses preferred for insulation?
(e) Explain in terms of the structure why alkaline earth-containing glasses are
desirable for dielectric insulation.
(d) What are the disadvantages of fused quartz?
Sketch the dielectric constant and loss factor as a function of frequency from 1 to
10. 8 Hz in:
(a) Germanium (high purity).
(b) CaFz.
(e) Label the dispersion regions with appropriate polarization mechanisms.
(d) For CaFz (only) give the temperature dependence for the change in frequency
at which dispersion occurs for each mechanism.
If the atomic radius of atom A is twice that of atom B, the electronic polarizability of
atom A is roughly
times that of B, other things being equal.
List the following crystalline materials in the order of their expected index of
refraction K = n' (from lowest to highest):
LiF
MgO
NaI
KF
PbO
NaBr
CaS
RbF
NaF
NaCI
CsF
CaO
A fine-grained ceramic specimen of rtile (TiO,) has a K' of 100 at 20C and 100 Hz.
To what do you attribute this high value? How would you experimentally distinguish
the various contributing mechanisms?
It is desirable to have capacitors with high storage capacity and small size. Discuss
how you would go about making a ceramic material to use as a dielectric to fit this
need. What properties are important, and what factors must be controlled?
A 2-cm disk 0.025 cm thick of steatite was measured and found to have a
capacitance of 7.2 LF and a dissipation factor of 72. Determine the following: (a)
permittivity, (b) electric loss factor, and (e) electric susceptibility.
974
INTRODUCTION TO CERAMICS
18.8. If one observes a loss-peak maxima for dipole relaxation at a temperature of 300C
when his oscillator is set at 1 Hz, at what temperature should he observe the peak
when he changes to 100 Hz, assuming an activation energy of 1.0 eV?
18.9. Describe four polarization mechanisms which exist in a typical dielectric such as
BaTiO, at a temperature below the Curie point. Draw a curve of dielechic constant
and loss factor as a function of frequency from 10 to 10'0 Hz.
18.10. (a) Explain why the dielectric constant for silicon carbide is the same as the
square of the index of refraction n'.
(b) For KBr would you predict K = n'? Why?
(e) For aH substances, the index of refraction is equal to unity at high enough
frequencies. Explain this.
18.11. Sketch a hysteresis curve for a typical virgin ferroelectric, and explain the cause for
this nonlinear relationship in terms of the mechanisms involved. How would this
curve change if the material in question were antiferroelectric?
19
Magnetic
Properties
Many of the magnetic eharaeteristies of eeramies are analogous to their
dieleetric eharaeteristics. Magnetie polarization and dielectrie polarization, permanent eleetrie dipoles and permanent magnetic dipoles, sponteneous magnetization and a spontaneous eleetrie moment, and other
similarities between magnetic and dieleetrie phenomena are striking.
However, individual positive and negative eleetric eharges (monopoles)
exist; there is no eorresponding magnetic monopole; magnetie fields arise
from spinning eleetrons or eurrent loops.
The magnetie eharaeteristies of eeramie materials are of inereasing
importanee as the field of solid-state electronics eontinues to expando
Although the lodestone (Fe,O.) was known to have useful magnetie
properties and used in eompasses beginning in the thirteenth eentury, it
was in 1946 that studies of J. L. Snoeek at the Philips Laboratories in
Holland led to oxide eeramics with strong magnetic properties, high
eleetrieal resistivity, and low relaxation losses. Ceramie magnets are
often used in high-frequeney deviees in whieh the greater resistivity of
the ferrimagnetic oxide gives them a decisive advantage over metals; their
use as cireuit elements for radio, television, and eleetronie deviees has
inereased as this teehnology has developed over the last 30 years. The use
of eeramie magnets as memory units with rapid switehing times in digital
eomputers has been essential to the explosion of eomputer teehnology.
Magnetic eeramies are important as speeial eireuit elements in mierowave
deviees and in devices which rely on their permanent magnet behavior.
Extensive and thorough treatments of magnetic materials and properties are given in referenees 1 to 3. The reader is eneouraged to go to these
texts for a more detailed eoverage than is possible here.
19.1
Magnetic Phenomena
976
INTRODUCTION TO CERAMICS
MAGNETIC PROPERTIES ,
~llustrated in Fig. 18.1. As a resu1t the total magnetic flux density B, which
IS analogous to the total electric flux density D, is the summation of the
magnetizing field and the total effect of the magnetic dipoles:
B = .toH + .toM = .t I H
susceptibility:
M
/.to
VEo
H = 1207TH
V/m
(19.1)
(19.2)
Then
(19.3)
Pm =
(19.4)
Frequently the magnetic field strength and flux density are measured in
units of oersted and gauss. The conversion factors are
I
,\
47T
H (A/m) = 103 H (O e)
(19.5)
= nPm = ncxmH
(19.7)
.t'
Xm = H = ncx m = .to - 1
977
"B
r-
~
47Tm == 9.27 X
10-24 A m2 /electron
(19.8)
where h is Planck's constant and .tB is defined as one Bohr magneton, the
orbital contribution to the magnetic moment of an atom by one electron
when 1 = 1. This is not the only mechanism which contributes to the'
magnetic moment of an atom. The electron itself has an intrinsic angul~r
momentum which gives rise to an electron-spin contribution of approxlmately 2s Bohr magnetons, where s is the spin quantum number ( 1/2).
In ceramic materials the orbitals are essentially fixed by the lattice and
tied down by bonding in such a way that their moments cancel (orbital
quenching); the main contribution to the magnetic mom~nt of. these
materials results from electron spins whichare free to onent wlth the
magnetic field. The coupling between orbital and electron-spin moments
does affect the observed results, however, so that the constant relating
spin quantum number to the magnetic moment of an atom or ion is on1y
approximately equal to 2.
According to the Pauli exclusion principie, only two electrons can fill
any energy level; these have opposite spin directions (s + 1/2, s ~
-1/2), and their magnetic moments cancel. Per.manent magnetIc m?ments
arise in systems in which unpaired electrons are present. These mclude
metals with conduction electrons, atoms and molecules containing an odd
number of electrons, and atoms and ions with partially filled inner
electron shells, for the most part the transition elements, rare earth
elements, and actinide elements. The electronic structures of these
elements have been discussed in Chapter 2.
=:
(19.6)
where
is the magnetizability of the elementary constituents. The
magnetic moment is proportional to the magnetizing field strength.
Magnetic properties, in parallel with dielectrics, can also be measured as
the ratio of the magnetization to the applied field, caP.ed the magnetic
CX m
979
MAGNETIC PROPERTlES
978
INTRODUCTION TO CERAMICS
.Lv
e
= - 4m
.Lor
2H
(19.9)
where e is the charge on the e1ectron, m is the mass, r is the radius of the
orbit, and the magnetic field H is applied normal to the plane of the orbit.
For electronic orbits of radius of about 1 , the factor e 2 .Lor 2 /4m is about
.10- 28 cm'. There are about 1022 to 1023 atoms/cm 3 ; thus the volume
diamagnetic susceptibility Xm should be in the order of 10-5 to 10-6 , which
is about the actual measured value of solids. As for the induced electronic
polarizability, the diamagnetic susceptibility is independent of temperature.
Diamagnetism is associated with aH ceramic materials in which the ions
have closed e1ectronic shells, that is no unpaired electrons. This generally
means that ceramics not containing transition metal ions or rare earth ions
are diamagnetic.
Paramagnetic Materials. Ions from the transition series and rare earth
series possess a net magnetic moment because the ion contains an odd
number of electrons (Tab1e 19.1). In the absence of a magnetic field these
moments usual1y point in random directions, producing no macroscopic
magnetization. However, in the presence of a magnetic field, the moments
tend to line up preferentially in the field direction and produce a net
magnetization. When the unpaired electrons are acted on individually
with no mutual interaction between them, the effect is called paramagnetism. The paramagnetic susceptibility Xm is positive because the moments
line up in the same direction as the field and thus enhance the magnetic
flux density.
For examp1e, the Mn2 + ion has a half filled 3d shell containing five
electrons; according to Hund' s rule ihe five electrons are unpaired, that
Ion
MgH
AIH
2-
Sc H
TiH(Ti H
VH(VH)
CrH(Cr H )
MnH(MnH)(Mn H
Fe H
Fe 3 +
.COH(COH)
Ni H
CuH(CU+)
Zn 2 +
CdH
Numbcr of
Unpaired Electrons
2p6
2 p6
2/6
O
O
O
3 p6
3p 6(3d 1)
3d 2(3 p 6)
3d 3(3d 4)
3d 5(3d 4 )(3d 3 )
3d 6
3d 5
3d 7(3d 6)
3d S
3d9(3d\O)
3d\O
4d lO
0(1)
2(0)
3(4)
5(4)(3)
4
5
3(4)
2
1(0)
O
O
.
l'
t magnetic moment per ion of
is have the same spins, whlch resu ts m a ne . .
.
f
M 2+
fi~e Bohr magnetons 5.LB' An ionic solid contammg n nonmterac mg n
ions has a paramagnetic susceptibility propor~ion~l to nlland't~ 5.L~ ig-~
attractive force for most paramagnetic matenals IS sma , WI . Xm -. h a
t 10-6 Although the individual magnetic moments tend to alIgn ~It
;agne~ic field, there is also an opposing tendency of thermal motlOn to
randomize the spins.
. I th
Ferromagnetic and Ferrimagnetic Materials. In sorne matena s e
f c moments of the individual ions are strongly coupled, and thus
magne l
.
. the solid in which the spins are aligned parallel even in
there are reglO ns m
t' fi Id This results in a large microscopic
th absence of a magne IC e .
. h
m:gnetic moment for the small regions, called Wei~s domai~s, e~en 10 t e
.. d t t 1 the Welss domams m a f er10wered by a paralle1 a1ignment
:~:~~~~fci~~rer~a~~~~n;~:t:m::e;~y ~s
980
INTRODUCTION TO CERAMICS
MAGNETIC PROPERTIES
(MnO, Fea, NiO, and Coa) exhibit this behavior. Thus the spins of the d
electrons of adjacent iron ions in Fea are aligned in opposite directions.
We caIl this behavior antiferromagnetism. In an Fea crystal having the
rock salt structure, ions on any (111) plane have paraIlel spins, but ions on
adjacent (111) planes have antiparaIlel spins. The aligned moments of the
ions in the two directions cancel, and the Fea crystal as a whole has no
magnetic momento Antiferromagnetism with no net magnetic moment is a
special case in which the number of spins aligned in opposite directions is
just equaI. In the more general case in which ions with unpaired electrons
are arranged on two sublattices with antiparaIlel spin alignment, we must
sum the net moment for each sublattice. A ferrimagnetic material is one in
which these net moments for the two sublattices are unequal, which
resuIts in a net macroscopic magnetic moment. That is, we have incomplete cancelation of the antiferromagneticaIly arranged spins. This c1ass
of materials is the most important group of magnetic oxides.
Magnetic Domains. A ferromagnetic or ferrimagnetic material is divided up into many smaIl regions or domains each of which is fuIly
magnetized; that is, aH the moments within each domain are aligned in the
same direction. When the bulk material is unmagnetized, the net magnetization of these domains is zero. The way that the magnetization vectors,
that is, these net magnetic moments, sum to zero is important in
understanding magnetic oxides. The two opposing magnetic domains in
Fig. 19.1a sum to zero; however, the energy of the material is lowered by
the successive breakup of the domains shown in Fig. 19.1b and c. In each
of these latter two cases the sum of the magnetization is also zero. The
pie-shaped domains on the ends of material are caIled c10sure domains
and complete the magnetic flux path within the solid; when the magnetic
flux is kept mostly in the solid, Fig. 19.1b and e, the energy of the system
is lower.
r~
/
/
(a)
I
I
I//-7---
)-I
--(b)
erg/cm
Domain wall--x/
-."
IN
I
'IN
/
/
/
I
N\
NI,
~j,
~
y-- - 7
/
/ /
/ /
~
(e)
Fig. J9. I. Several domain structures of a solid, each having zero net magnetization.
/
/
1m1\\~11Ijl \\\
/~
/
I
/~
!t
,I
).
i , !t
\
t
981
Just as dielectrics change their length when polarized, magneti~ materials change their length when magnetized. The fractional change m len?th
(di/O associated with a change in magnetization from ze.ro to saturabon
(aIl spins aligned) is the magnetostriction. For example, NIFe2~4 .contracts
in the direction of the magnetization by about 45 parts per mI1hon at t~e
saturation magnetization. The amount of dimensional change observed ~s
a function of both the magnetic field strength and the crystaIlographlc
orientation.
.
Hysteresis. The state of magnetization of a solid is a func~lOn of the
strength and direction of the magnetizing field. If w~ consl~er a ferrimagnetic material which contains many smaI1 magnebc domal.ns but no
net magnetization, we can examine what happens to the domams as the
982
INTRODUCTION TO CERAMICS
MAGNETIC PROPERTIES
field strength is increased (Fig. 19.3). As the field is increased from zero
the effect on the solid is to displace domain boundaries in a reversibl:
.fashion. If the magnetic field is switched off, the domain boundaries
return to their starting positions. Thus the initial part of the B - H curve
results from reversible domain boundary displacement, and the slope is
~a11ed the initial permeability J-LI. As the magnetic field strength is
~ncreased, there is an irreversible boundary displacement, and at first the
I~duced ma~netization increases more rapidly than the field strength and
~Ives a maXlmum slope J-Lmax. Finally in the upper part of the magnetizahon curve all domain boundaries have been displaced,and further
increases in the magnetic field cause rotation of the domains in the
direction of th.e applied field. At this point the materialis saturated; higher
fields cannot mduce more magnetization.
As the magnetic field is decreased to zero, the induced magnetization
does not decrease to zero, but the alignment of most of the domains
during magnetization results in a remanent magnetization or remanence
--------------
Slope =
Mi
H
Slope =
Mrev
Fig. 19.3. Magnetization characteristic and hysteresis loop caused by domain action.
983
984
INTRODUCTION TO CERAMICS
MAGNETIC PROPERTIES
\0
B
T
985
temperature, the slope yields the value for the magnetic dipole moment
P m This same expression applies to condensed-phase paramagnetic
materials and is often given in reciprocal form:
= Pm X B = IP ni" B I sin O
(a)
!-~T=T
2
X - nPm p.,o
----~.B
Lowest energy
magnetic. m~me~ts parallel to the applied field is given as PmB sin O. The
energy dlstnbutIon as a function of O is given by
E(O)
TdO
PmB cos O
= -
(19.10)
N(O) dO
(19.11)
where N(O) is ~he number of magnetic dipoles per unit volume at an angle
O to the .appbed field and A = n 1(27T fo~ sin O exp [PmB cos 01kT] dO),
where ~ I~ th~ t~tal number of dipoles per unit volume. Finally the
magnetIzatIon IS glven by
M
wher~ L
JN(O)Pm
cos OdO
nPm(COthL - {)
(19.12)
[;k':J
M = nPm
nPm[P3'r;]
XH
(19.13)
=--
HappHed
(19.15)
T - Te
(19.16)
where C is defined by Eq. 19.14, and Te = CA, which ineludes the effect of
the exchange field.
For an antiferromagnetic material we assume opposing electron spins,
and therefore the magnetic dipoles for the two sublattices are equal bu.t
opposite. However, above a transition temperature called the Neel
temperature TN =
\C,
bility is given oy
M
C
C
--=x=
=
T + AC/2 T + T
Happlkd
(19.17)
(19.18)
which for Fe3+ ions is 2(x - y)5p.,8' Again by assuming a Curie law type of
behavior in the paramagnetic region of a ferrimagnetic material, the
986
INTRODUCTION TO CERAMICS
MAGNETIC PROPERTIES
= AAB(2xy -
(19.19)
x 2a - y2(3)
(J = AABXyC(2 + a + (3)
~= A~BXyC[X(1 + a) - y(1 + (3)]2
Ferromagnetic
-
Paramagnetic
->-
l~nrd:o 1
I"
Slope =
T-1~
X-=-c-
T-;..
(19.20)
param!;.-et-ic-j-r------;>,/
and where AAB is the exchange constant for interactions of the ions on the
a and b sites and is a negative term; a is defined as AAA / AAB and {3 is
defined as ABB/AAB. Both of these latter terms are also negative. The origin
of ~hese e~change constants (Weiss or molecular field constants) in
fernmagnetIc materials is discussed in the next section. The temperature
dependence of the susceptibility for these four cases is illustrated in Fig.
19.5.
987
(a)
--.,>
(b)
Paramagnetic
-----o
T
-=:::::::~'-TN
......
x-
Ferrimagnetic
c:
1
-x1 =el'- +
- -EXo 1'-8
:
T=-
---?-
~c)
c/xo
ro
~f-------_~
Q)
c:
o
T ---...
(d)
c:
OD
ro
E
c:
o
c:
Ferromagnetic
Paramagnetic
.;:J
ro
{f)L-
- L_ _
988
INTRODUCTION TO CERAMICS
Antiferromagneti~
Xl
-I~
989
MAGNETIC PROPERTIES
electrons, especialIy transition metal ions, and the way in whieh these
outer electrons interact with the electrons of neighboring ions.
Direct Exchange Interaction. The magnetie dipoles in a ferromagnetic
material (e.g., Fe, Ni) are orientated spontaneously so that a net macroscopic magnetic moment is observed. Even in a polycrystaIline material
the dipoles are paralIel to one another except as one approaches the Curie
temperature. The coupling between the electron spins which results in
this paralIelism is not of magnetic origino Such a magnetic dipole-dipole
interaction would be too smalI by a factor of about 103 to explain the
observed Curie temperatures (350C for Ni,770C for Fe). The only
adequate explanation of this interaction is based on quantum mechanics. *
This direct exchange interaction may either be positive or negative (Fig.
19.9) and is given by the exchange integral. The magnitude and the sign of
the exchange integral depend on the ratio DId, where D is the atomic (or
ionie) separation of the interacting atoms (or ions) and d is the diameter
of the electron orbit under consideration (the 3d or 4/ orbits of the
transition metals). From Fig. 19.9 it is seen that Dld < 1.5 gives a negative
Paramagnetic -------."..
T->-
Fig. 19.7. Susceptibility of an antiferromagnetic material for cases when the fie1d is applied
perpendicular (X x) and parallel (Xi) to the magnetic dipo1es and applied to a polycrystalline,
that is, random (X random) set of dipoles.
..;\
(Jx_y
Fe
e
::;;
l'2
Q)
e;;;
O~----t!l---------=-2LO-------
M
e
u
x
ro
.c
atomic separation
diameler of 3d orbit
Fig. 19.9. Slater-Bethc'curve showing the magnitude and sign of the exchange integral as a ,function of Dld. From reference 2.
(a)
(b)
(e)
Fig. 19.8. Nel's prediction for magnetization (]"._y versus temperature in a ferrimagnetic
material where x and y refer to the sublattices.
990
INTRODUCTION TO CERAMICS
whic? separate the metal ions with partialIy filled outer orbitals. That is,
the ~lfect ex::hange betw~en metal ions is partialIy or wholIy obscured by
~he mt~rvenmg oxygen IOns. Two mechanisms by which a negative
~nteractlOn may be obtained and in which the oxygen ion plays an
~mporta~t role have been suggested and are calIed the superexchange
mteractlOn and the double exchange interaction.
. , S.uperexchange In.teracti.on. Since the bonding in the oxides is mainly
IOnIC, the. oxygen Ion wlth a fulI 2p sheIl has an inert gas electron
configuratIon, and its interaction in this ground state with metalIic ions is
smaIl. The superexchange interaction has been proposed for the case in
which there is a mechanism of excitation from this ground state.
The possible excitation mechanism involves the temporary transfer of
one oxygen 2p electron to a neighboring metal ion. Qualitatively we can
describe the superexchange interaction by considering the folIowing
example of ferric ions in an oxide. We go from a ground state of these
ferric ions in which the five 3d electrons according to Hund's rule are alI
aligned. The six 2p electrons of the oxygen ions form three pairs in which
~ach of the pairs have canceling spins. Recalling that the p orbit is shaped
hke the dumbbelI (F~. 2.5), let us consider the interaction when an
excited state exists and one of the p electrons temporarily becomes one
c;>f the d electrons of the iron ion. The transfer process in which we have
one ferric ion on one side of the oxygen and another ferric ion on the
other side is given as folIows
Fe3+(3d 5 ) ~ Fe3+(3d 5 )
1l1H
H1H
The one ferric ion now becomes a ferrous (Fe2+) io~; The unpaired
electron of the oxygen p orbital which was directed toward the ferric ions
now can interact in a negative way with the unpaired ferric ion on the
other side. If the 3d shelIs of the metal ions are less than half fulI, the
superexchange should favor a positive interaction; for 3d shelIs which are
half filled or more than half filIed, like our example of the ferric ion a
negative interaction with antiparalIel spin is probable. It is generail y
a~sumed that this superexchange interaction diminishes rapidly as the
dlstanc~ between the ions increases. The dumbbell shape of the 2p orbital
makes .It r~asonable to as sume that the interaction for a given ionic
separatIon IS greatest when the metal oxygen-metal angle is 180 and is
Ieast when this angle is 90. Thus in a spinel lattice we concIude that the
a -b interacti~n is rel~tively strong, the a -a interaction is relatively weak,
and the b -b mterachon is probably intermediate.
Double Exchange Interaction. Another mechanism has also been pro-
MAGNETIC PROPERTIES
991
.,
1:
,.......
;:
,......,
>-3
~~~~'T:1
::r
o
::l
o
.....
ao
ao
-a -
,-...
x
.....,
I
x
.......
,-...
;.
~
c
-7
'T:1
,-...
(1l
~
,-...
x
.....,
x
.......
...,
,.......
;:
,......,
+'I1
+-
O"
'"
--
(1l
O"
+-
'I1
O"
_.
.;;
+VI
1:
'"
>-<~
__
_0""'1
I ~
::l
0"+
N
;:,,~.
<E--
g-::;::1:'g.
,-...
\0-.1:
~'"
.....,
\O
N
.....,
1-+)
_.
::l
'" o
..... ::l
o
..... o
o
_.
I>l .....
8::l @ _.
o
n ::l
::r o '"
::ro ::
~ <:3""2..
_.
o
ie,O,
lMn,O.
Mn,O.)
;Mn,O.
::
;!l.
....
..,Z
'"q
::
\:l:l
I
I
...
"
"<:l
'"
S'
.?>te
!!';!;. o. ~
..........
o
::r "n
..,
oz
:>
..,
O
(j
t"l
\:l:l
;..-
"O
o~'<
s:
....
(j
~
rg.a
... o o
a=
;!;. CJ<:I
S' .
_. g
.....
g _.
,-...
\O
o ::r
'" ::l ::l ;:
.....,
n..... ..,
o-..... ..,
o
o n
::l .....
I>l",g.
C "9. o
o
o.
..... ::l ..,
n_'_0p.:>
::l _
.., ---
Density
(A)
p
(ohm-cm)
(room temp)
241.1
230.6
231.6
5.33
5.00
5.24
8.44
8.51
8.39
lO'
lO
4 x 10-'
234.6
234.4
5.29
5.38
8.38
8.337
10
10'_10
3
2
3.94
2.3
239.2
5.42
5.35
8.37
8.70
8.22
8.36
8.33
8.34
b.c.t.
Qo = 5.75
Co = 9.42
lO'
Qo
200.0
207.1
159.7
4.52
4.75
228.8
4.84
10
-lO'
Mo
J.m
(cale)
J.m
UO
u.
M.
(room temp)
B.
Te
K,
("C)
(x 10-')
(x 1
M = 5 J.B
T N =9.5K
560
7000
510
6400
92
400
480
6000
585
-40
-130
-5
+4
93.9
56
496
300
6230
3800
80
50
425
270
5300
3400
520
585
+2000
-69
-1
-1
2.3
1.3
455
160
2000
25
l3S
1700
-63
-60
-1
30
1.1
2.6
2.3
31
69
81
140
330
1800
4200
27
65
73.5
110
310
417
1500
3900
440
670
575
-40
-83
42"K
-107
Antiferromagnetic
5
4.55 112
4
4.1
98
O
2.5
2.5
Bo
(OOK)
1.85
80
218
185
25
85
O
I::l
(j
Molecular
Weight
198.2
o~::r",
o _. ~
_
Table 19.2.
:Fe,O.
,,Fe",O.
"n
-..:-./:'.r------
Fe,O.
;Fe,O.
Fe,O.
Fe,O.)
Fe,O.
r:e 2 04
Fe2 04:
uenehed
;low-cooled
::r
::r8::l(JQ
("D
,...... ("D
o.
::r..,
_. o o o.
<: ..... l:l _.
'" o
....,
o ~ ::l o
::l:; '" _
,...
:>
:-o
,. . . =:;0 Er
e:S-~::l
~
.......
,-...x
cf'
'" .., ::
<: _.
o oo. (1l
'"
\,0,1
o ~ ::l '" a
ac::ro .....
oo,e:."'::r
a::l -',-... (1l
a::x _.,.......
("D
c+
10-"
-.~~"'-.
~::;" ~~ o
("D
'T:1
g o a o _.g
o..... 2.. o a en
--
O"
,......
'O
'O
N
"r1
"'~>-30
o .....
o' =r
~
VI
"&c=D~~e:..
~
::r (1l
~ ..... ~ o ::l 1:
::l ~ ~
..... '"
CJ<:I ..... ::l S 7'
o _. o o """
a!!'.., a _.
o...c::::=
o
::l
n
'<
~=:'::r-'
o o __ <:
--
~ ~
s. en ~ ~
ong-Q.. ::r
...
"'0_
~ a - '" o
~ "O (ji' g- o.
("C
_. go.
::l 2
o ::l C.
::l C. o
..... "O ::l
_. ~ ~
so
~.
~
~
1=
a~"O"'"
@o::roo
o n ..,
o ~
~ ~
~.
::l
_. So
o o
..... ~ .., ::l .....
=r~,......U'JPJ
o
_.::r _. ::l
<:3" '" o ::l ~
::l Q.. . . . ~
5000
994
INTRODUCTION TO CERAMICS
(n - lO)JLB.
MAGNETIC PROPERTIES
would be JLm
Table 19.3. MnFez04 Curie Temperature T" Saturation Magnetization 0'0 per Gram
at 4.2"K, and Corresponding Moment pm per Formula Unit Measured on Two
Polycrystalline Samples and Single Crystal
( = amount of Mn at B sites)
Heat Treatment
T,(OK)
at 4.2K
(G cm'g)
n" at 4.I K
Sample
(1'-,,)
610
108.5 :!:0.2
4.49 :!:0.01
0.11-0.12
Polycrystalline
1150c quenched
1150C slowly cooled
and annealed at
1000, 900, and 700C
555
111.8 :!:0.2
4.61 :!:0.01
0.05-0.08
585
110.4:!:0.2
Single crystal
620
106.8:!: 0.2
4.42 :!:0.01
0'0
100
80
.....
""
:i
E 60
~
b
40
Mg
20
Source.
120
Cu
100
200
300
400
Temperature (OC) _
600
700
995
Reference l.
quenched and slowly cooled. Nickel ferrite has similar properties, and it is
80 to 90% normal spinei.
Magnesium ferrite transforms at high temperatures to the normal spinel
structure as the divalent magnesium ions are thermally excited onto the
tetrahedral a sites. In this case the magnetization is strongly infiuenced by
the cooling rateo Quenching retains the normal spinel structure; slow
cooling allows the inverse spinel structure to occur because enough
thermal energy and time are available to allow the magnesium ions to
migrate to the preferred octahedral b sites. The saturation moment for a
rapidly quenched sample is 2.23JLB; a slow furnace cool resuIts in 1.28JLB'
The Mgz+ ion has no net moment so that the inverse spinel should have
zero magnetization and the normal spinel 10JLB. Magnesium ferrite has
high resistivity and low magnetic and dielectric losses and with its
derivatives has wide applications in microwave technology.
Mixed Ferrites. The pure ferrites listed in Table 19.2 have a wide
range of properties; magnetic constants differ in magnitude and often
have different signs. Therefore, a solid solution of two ferrites allows
even greater variation of the magnetic parameters. For instance, the
gradual replacement of the divalent manganese ion in manganese ferrite
with a ferrous ion reduces the magnitude of the magnetic anisotropy (.
and K,) to zero and yields a material of high permeability. With a high
enough concentration o Fez+ ions the sign of the anisotropy and
magnetostriction is reversed; ferrous ions also have the effect of decreasing the resistivity, which is usualIy an undesirable effect.
rt*
996
INTRODUCTION TO CERAMICS
" "1
#" .. ,
tt
11
997
MAGNETIC PROPERTIES
~---r----'-------''-----'---'
10
4,1
///I!
//r
l-----I------l---i---#~_9
/ /I
/;1 1
1--_ _ ~---j--___::_f0!?1-!-1-----l8
/////;;
/ / /.'1;
1/1 1
/ 1
L--.l----7't-/--T/~/'-+'I__f_1
--t------j 7 ~'
/
/1
/
/
/;/
Qj
/1/1
/;
ro
L------4-~-:::-_:hil-L-f--_+---j 6 E
~
e
L~:LW~~~-;;:::-1---t--_ 5 .~
N
.~
bO
ro
L~~I!7___i___+_-"'-1-__\____+----l 4 ~
o
""
~
.a
w0-~W:--+--~\-\---t--_ 3 c'i5
...
~.
1-_--+-~-+_-----l2
I
ZnFe Z 4
O2
O4
O6
0.8
1.0
F'
19 12
s~~i'd
998
999
MAGNETIC PROPERTIES
INTRODUCTION TO CERAMICS
I
I
1//
1
G-L_I
\
/
I
I
--
I---+------~----I
\
I~:
/
///
Fi
19.13.
)./
//
:E)
J-----
:0
)-
(Fe2?A(Fe3)"\M3)~012 w~tho~t~h~
ox~gen ions;.the unit ceH side ao conbsists ~~t~:~:ta~fdt~~~~ ~n~~dd ~O~Sn~;i~~ ~~~~~ cUbe
l
':;
antiparaHel, as are the e ion and d ion moments. For M/ Fe2 o Fe/ 0 12
- 3 .Le - (3 .Ld - 211.
) = 311.
,-0
,- c
.Loel -
- 5.LB
(19.24)
if we as sume a moment of 5.LB per Fe3+ ion. The predicted moments per
formula unit are more difficult to estimate for the gar~et str~cture th.an f~r
spinel because there is a contribution due t.o splO-orblt couphng m
..
addition to the contribution of the electron s p l o . .
Magnetization-temperature curves for several garnets are ~hoW~ ~ F;;~
predicted by Neel (FIg: 1 ..
19 . 14 . First we see the behavior
.
.
h h th magnetIzatlOn deuncompensated antiferromagnetIsm, In W IC
e
t
creases to zero at the compensation temperature and then has a mome~
in the opposite direction which increases and then de:reases as ~he .cun~
tem erature is reached. This is caused by a more rapld randomlZa~lOn.o
the ~oments on one sublattice relative to the other. Thus, a magnetJza~lOn
of opposite sign on passing through the compensation tem~eratur~ re ers
to a change in the direction of magnetization in the crystall.Ine lattIce, b.ut
there is still a positive interaction with an external magnetJc field In ~tl~.
. .
. t
s of 11. per formu la um IS
19.14 the spontaneous magnetIzatlOn In erm
,-B
lotted
only
as
positive
values.
.
.
11
f a
P
1k ds of catlOn Sltes a ows or
.h
The open garnet s~ru~ture W.lt. sge~:;:ee~ rare earth garnets as well as
wide range of substJtutlOn, mlXIll
1000
INTRODUCTION TO CERAMICS
21------r---_-----
MAGNETIC PROPERTIES
perpendicular to the plane of the film. Small magnetic domains with spin
up, separated by regions with spin down, appear as bubbles in a polarizing
microscope. The spin up-spin down array provides the binary input for a
digital computer, and thus we have the term bubble memory materials.
Note that the induced anisotropy due to thermal stresses is the source of
this behavior rather than intrinsic anisotropy.
Orthoferrites. The crystal structure of the orthoferrites is that of
perovskite (Fig. 2.28) with the general formula MFe03, MCo0 3, and
MMn03, where M is La3+Ca2+, Sr 2 +Ba2 +, y3+, or arare earth ion; the Fe,
Co or Mn ion is trivalent or tetravalent, depending on the valency of M.
The compounds LaMn03, LaFe03' and LaCr03 are antiferromagnetic
with Neel temperatures of 100, 7S0, and 3200 K respectively. Sorne o the
mixed oxides such as LaMn03 doped with calcium, strontium, or barium
show ferromagnetism over a limited range of composition. The single
oxides RFe03 in which R is yttrium or arare earth metal also show weak
ferromagnetism. There is a slight misalignment (canting) of the two
antiferromagnetically coupled lattices. This canting, which is of the arder
of 10-2 radians, is sufficient to introduce a small net magnetic moment.
Ilmenites. A number of oxides with the structure of ilmenite (FeTi03)
and corundum are ferromagnetic or show parasitic ferromagnetism. Sorne
examples are a-Fe203, MnTi0 3, CoTi0 3, and NiTi03; the oxides CoMn03
and NiMn03 ha"e the same structure but are ferrimagnetic at rool11
temperature.
'
Although the uses of these magnetic ceramics have not found so wide
an application as the ferrites, their wide range of magnetic characteristics
will most certainly lead to greater futur~ use.
Dy
14
O)-------J~o_~--~~~~~~
19.5
200
300
Temperature ('K) ----."..
P'
19. 19.14. Spontaneous magnetization in
dE'
Bohr magnetons per formula units versus
emperature of Gd Tb Dy H
,
,
, o, an
r Iron garnets. From reference 1.
1001
..,+
1,'
'J
r.
f-:~) ,t ~;
-~.
__
INTRODUCTION TO CERAMICS
1002
2 t tetrahedral
1 ! fivefold
""O
-o
""
8
"
z
""
00
4t
octahedral
2 t 3 t octahedral
The hexagonal ferrites are of interest because of their high magnetocrystalline anisotropy, making them suitable for permanent magnets.
They have high coercivity, approaching the value 2K / Es for pure
rotation. The best known of these compounds is barium ferrite, which is
also known as ferroxdure or hexagonal M compound. There are other
more complex derivative compounds known in the literature as hexagonal
X, W, Y, and Z compounds. The magnetic properties and compositions
for a series of these hexagonal compounds is given in Table 19.4.
These compounds are prepared by sintering the appropriate mixture of
oxides at temperatures near 1300C. Anisotropic specimens can be
prepared by the application of a magnetic field during pressing and
sintering. This results in the rotation of the particles so that easy
directions tend to become aligned parallel to the magnetic field. This
maximizes the effects of the anisotropy field (2K / Es), which is an
indication of the degree of preference for a particular magnetization
direction (in Table 19.5 barium ferrite has an anisotropy field of
17,000 Oe). This treatment reduces the coercivity (typically from 3000 to
15000e) but increases their remanence B, (from 2000 to 4000 G). The
coercive force also depends on the particle size; if the grain size is below
single-domain size, the coercivity is expected to be high because the grain
boundary interacts with each domain. Typically a change in the average
grain diameter from 10 to 1 micron increases the coercivity from about
100 to 2000 Oe.
'O
I
O
'O
00
N
00
... ""
0\ -
...D
'-l
V')
""
......
::
8
o
8
.:!l
E
:l..
1003
00
<V')
Table 19.5.
....
Q
Q
.;.
BaM
PbM
SrM
Mg,W
Mn,W
Fe,W
CO,W
Ni,W
CU,W
Zn,W
NiFeW
ZnFeW
MnZnW
Feo.,ZnuW
F eo.,Nio.,ZnW
Feo.,CO O7,Zno.7'W
FeNio,Zno., vy
Co
(A)
ao
23.18
23.02
23.03
5.889
5.877
5.864
.. .
...
32.84
.
...
...
...
.. .
.. .
.. .
.. .
.. .
"
.. .
., .
...
...
5.88
. ..
. ..
. ..
. ..
.. .
...
.. .
.. .
.
...
...
"
Density
d
Molecular
Weight
5.28
5.65
5.11
5.10
5.31
5.31
5.31
5.32
5.36
5.37
1,112
1,181
1,062
1,512
1,573
1,575
1,581
1,580
1,590
1,594
1,577
1,584
1,583
1,589
1,586
1,584
1,581
...
. ..
...
...
. ..
. ..
. ..
B,
380
320
370
310
320
340
330
' 34<l
273
380
370
380
350
360
360
K,
or
(K , +2K,)
(10 6 ergs/cm3)
3.3
2.2
3.5
OOK
/Lm
T,
(kOe)
(To
(/LB)
(oC)
17.0
13.7
20
100
80
108
20
18.6
20.6
450
452
460
97
98
27.4
27.4
415
455
79
108
22.3
30.7
520
430
104
29.5
45
H~
. ..
. ..
3.0
-5
2.1
19.0
12.7
. ..
. ..
12.5
10.2
2.4
1.9
2.1
1.6
II.l
(-004)
. ..
9.1
2.2
. ..
.\-
.~-
---'-.
....
g
01
Mg,Y
Mn,Y
Fe,Y
CO,Y
Ni 2Y
CU,Y
Zn,Y
Feo.,Zn,.,Y
Mg2Z
Mn2Z
Fe 2Z
CO,Z
Ni,Z
CU,Z
Zn,Z
Fe,X
Zn,U
.. .
.. .
43.6
.. .
.. .
.. .
43.56
.. .
.. .
.. .
.
., .
.,
5.9
...
.
.. .
.,
5.88
.. .
.. .
...
.. .
...
52.30
5.88
.. .
.. .
.. .
84.11
113.2
.. .
.. .
...
5.88
5.88
5.14
5.38
5.39
5,40
5,40
5.45
5,46
...
5.20
5.33
5.33
5.35
5.35
5.37
5.37
5.29
5.36
1,346
1,406
1,408
1,414
1,414
1,424
1,428
1,423
2,457
2,518
2,520
2,526
2,526
2,536
2,539
2,386
3,651
119
167
(-0.6)
185
127
(-2.6)
(-0.9)
227
191
(- 1.0)
(-0.9)
.. .
.. .
267
.. .
247
310
...
295
Me,Z = Me,Ba3Fe'4041
Me,X = Me,Ba,Fe'8046
Me,U = Me,Ba.Fe36060
Source. Reference 1.
.,
., .
.. .
(-1.8)
10
29
42
6.9
10.6
280
290
28
14
39
25
28
72
9.8
6.3
7.1
18.4
340
390
55
24
69
54
60
31.2
24.6
27.2
60.5
...
...
9.0
9.5
...
13
...
., .
0.6
1,4
.. .
.. .
9.6
92.5
.,
.,
...
130
410
440
360
400
1006
1007
MAGNETlC PROPERTlES
INTRODUCTION TO CERAMICS
.
..
. terin atmosphere, and the size and distribueffects of ImpuntIes an~ s~n
g
ces for the magnetic propertion of porosity have sIgmficant consequen
1
\
V . bTt
ay result from batchingproblems,
antv~;i;t:ns are also important, and careful
but microscopIC composI IOn.a (b 11 'llI'ng calcination coprecipitation,
'
.
.
der preparatIon a m I ,
attentIon to pow .
u in that the cations are present In the
etc.) is extremely Important. As~ m g f on affects the microstructure
correct proportio?s, the sinten~g ~?~r~~tion of the cations within the
(grain size, porosIty) and als~ t be ISdn 'es and in second phases. The
. l'
t the gram oun an ,
fal pressure of oxygen in the
crystalhne attIce, a
h
sintering time and temperature, ~ e ~~~ ~ust be controlled. The oxygen
sintering atmosphere, and the c.~~hng r d to the phase equilibria. It was
pressur~ should be chos e: d ~~ th:~~~e oxygen stoichiometry influenc~s
shown m Chapters ~'. 6, a l '
d that the ratio of ferrous and fernc
the valence of trans~tlOn meta lIO~S. an conductivity. To maintain a high
l
. desirable to keep the iron in
ion content determmes. t~~ e ec nca h
.
resistivity, a slightly oXldIzmg atmosp ere IS
tieso
Composition~1Eflects. 'f
";--
.
.'
. causes oxidation of sorne of the
the Fe3+ state.
In manganese fernt.es, firm~ In ~:da~:uses a sharp deterioration of the
manga~ese to for,? tn~a~lnt ;~~~ shows the effect of various sintering
magnetIc propertIes. .a. ~
rmeability and coercivity of manganese
,
.
nt arises
atmospheres on the resIstIvIty, pe
.
ff ct of the oxygen enVIronme
cies' location of the cations on
ferrite. Another Imp~rtant e ~
because of the for,?atI(~n of catlOn vac:nindu~ed anisotropy which can
nonequivalent lattIce sItes leads t? a
nd decrease permeability.
stabilize the positio.ns of the d.O;aI~ V;:~\~t:in a random distribution of
.
:~:ring to take place (slow cooling). In manganese ferrite the magne za-
Sintering atmosphere
Resistivity (ohm cm)
Initial permeability
Maximum permeability
Coercivity (Oe)
Source. Reference 5.
Air
lOS
50
138
1.67
C02
Relium
6 X 103
228
3200
0.50
103
232
3220
0.89
1008
INTRODUCTION To CERAMICS
tion per formula unit is O.76Ln after quenching from 1400C; it increases
to 2.68Ln when quenched from 14000C.
The importance of composition on the bulk magnetic properties has
been discussed for the mixed ferrites. Table 19.7 further indicates the
compositional variation of properties for manganese-zinc and nickel-zinc
ferrites. The low-frequency permeabilities of the manganese-zinc ferrites
are higher; the nickel-zinc ferrites have much higher resistivities. However, as the frequency of measurement is raised, the difference in the
permeabilities becomes less significant. Substitution of zinc for manganese affects both the saturation magnetization and the anisotropy, but it is
the anisotropy which has the greatest effect on the permeability. At low
temperatures the substitution of the Zn 2 + for Mn2+ on a sites increases the
magnetization of the two sublattices. The presence of zinc also reduces
the strength of the a-b interactions and decreases the Curie temperature.
Grain Size and Porosity. The permeability of polycrystaJline ferrites
increases with increasing grain size, assuming that other factor s remain
constant. Evidence for this is shown in Fig. 19.15 for the initial permeability of manganese-zinc ferrite. All samples have the same composition and
the same crystal anisotropy and magnetostriction. The distribution of
pores does change; pores are within the grain (intragranular porosity) as
0000
"'.,.,0000
..qt--('I~
OON...t::
20 microns
L...........-..
4
o 00 o
0000
rt'I lrl t"- r'1 '<T '<T .,.,
'"I
S3
x
:;
.9
.~ ~
VNNOO.....c
U-.Vl'<Tr'1'"
:;
'J)
<U
0_
0.0
E E
o~
20
_.,'.
1009
1010
INTRODUCTION TO CERA.MICS
Il
".-P = 0.070
600
500
d.,-d
Porosity
=---;;-
400
i
~ 300
I
..=,
200
K1
(19.25)
J.L - 1 = 47TB/
3K
5000
"<; .
Ot===_~1~00=----~0;----~---200--~
-200
T(DC) _,..
4000
100
~
Vl
'0
3000
- 75
>
OD
'Vi
Vl
3:
1011
MA.GNETIC PROPERTIES
<ll
Vl
Vl
2000
50 ooe
.;
1000
25
~...L..--L---,L,---.,L:-----:L.-_---.J_----l
10
15
20
25
Average grain diameter tj) (microns) _ _
5
30
Fig. 19.16. The initial permeability of a nickel-zinc ferrite as a function of average grain
diameter (i), together with an indication of the percentage of crystallites found to contain
visible pores (ii). From Guillaud and Paulus, reference 1.
. .,
d ' n walls are included within the grains,
As the grain Slze IS mcreas~d, omal . b ndaries or at intergranular
b ome pmned at gram ou
Id be sensitive to the grain size and the
and t h ey may .ec.
pores. Thus thelr motlOn wou
f ores within the grains and at
distribution of porosity.
In addition to the strong effects on J.L O P ..
"t and hys.
h
. m permeabl1Ity, coerCIVI y,
the grain boundanes, t e. maxlJ~u18 shows the effect of porosity on the
terisis are also affected. F..gure 1. . f 'tes This is demonstrated more
magnetization loops of lllcke1-ZInC ern .
,",,#,!'pmtt
J'
rr r TraStF
5'
; ntTt
1013
MAGNETIC PROPERTIES
INTRODUCTION TO CERAMICS
1012
P?
3T
40.-----.-----,----.,-------,,-------
4000
30
1460'C
p = 5.04
_-..:.r---Z50'C
--
QJ
2.
P'" 4.17
Qj
62-
20
10
He
o
o
10
H (Oe) ______
20
30
40
4.20
Density (g/cm 3 )
Fig.19.18. The effect of porosity on the B/H loops of nickel-zinc ferrites (33NiO, 17ZnO,
balance Fe,O, and Fea). The densities indicated were oblained by firing al lhe lwo differenl
lemperalures. From reference 3.
2
4.45
4.40
4.35
4.30
4.25
(a)
1600.-----.,-----,----,----,
~
.'. .
B m
1200
.~:
...."
800
4o.?.20
o
o
4.25
4.30
o o
4.35
4.40
Density (g/cm 3 ) ~
lb)
Fig. 19.19. (a) The variation of initial permeability, measured at 10 kHz, and coercivily,
with density for specimens of Mg Fe,O. (b) The variation of maximum induction and
remanent induclion with density for Mg Fe,O. From reference 5.
1014
with grain sizes less than 150 . In this case the magnetic behavior is
superparamagnetic. In a superparamagnetic material the Langevin equation 19.12 is calculated for the net magnetic moment of the material due to
the micrograins rather than the individual dipoles. Thus they have larger
moments per partic!e, and thus the term superparamagnetic is used. For
larger-grain films (150 ) deposited at temperatures aboye 400C the films
spow ferrimagnetism similar to bulk nickel ferrites.
Hexagonal Ferrites. The microstructural features important for cubic
ferrites also apply to hexagonal ferrites. However, because hexagonal
ferrites are generally used as hard magnetic materials, we must also
evaluate the infiuence of ceramic processing on the coercivity. A reduction of the grain size from 10 to 1 micron in barium ferrite increases the
coercivity from 100 to 2000 Oe. The effect of nuc!eation and growth of
domains is to reduce the coercivity below the value which would be
obtained if only rotation of the magnetization were possible. This
as sumes that there is considerable crystalline and shape anisotropy. High
coercivities may arise in three ways: (1) The nuc!eation of domains may
require high fields. If the nuc!eation field is greater than the field required
to move the domain walls,which are throughout the specimen, then we
require a switching or reversal field to reverse the magnetization which
results in a rectangular loop. (2) There may be barriers which inhibit wall
motions and which can only be overcome by high reverse fields. (3) The
material may exist in such a condition that domains cannot form (Le., as
very fine partic!es). In this case only rotational processes are possible. A
finely divided structure (small grain size) has been demonstrated to
increase the coercivity in almost all permanent magnet materials. This is
an important feature.
Further improvements in properties are obtained by aligning the
crystallites during pressing or slip casting by carrying out these processes
under a high magnetic field. Thus in barium ferrite the hexagonal axes are'
preferentially aligned, giving the polycrystalline mass an anisotropic
magnetic behavior. Improvements in the initial permeability by a factor of
about 3 are possible by partic!e alignment.
Suggested Reading
.n..
MAGNETIC PROPERTIES
INTRODUCTION TO CERAMICS
1015
4.
I
I
I
Problems
19.1.
(a)
19.2.
19.3.
19.4.
19.5.
19.6.
19.7. The magnetic moment of a ferritc, Lio.,Fe2.,0" has becn measured and observcd tI
be 2.6 Bohr magnetons per unit of spine1 formula. How do you justify this resul
1016
INTRODUCTION TO CERAMICS
from the known net spins associated with the ions involved? What position(s) in the
crystal lattice does Li+ occupy? Fe+'?
(a) The domain ",,:all energy (180) for iron metal is about 10-' l/m' (1 erg/cm').
How much of thls energy would you predict is magnetostatic
_
magnetostrictive
, exchange energy
crystalline anisotropy
nueleus-electron interaction
other
---(specify).
19.9. Ferromagnetic and ferrimagnetic behavior is observed to occur only in compounds
which inelude ions of the transition and rare earth series. What is unique about the
structure of these ions that leads to this type of magnetic behavior? Why are only
sorne of the compounds of these ions ferromagnetic or ferrimagnetic and others are
not?
19.10. (a) Crystals of MnF, are antiferromagnetic and have a Curie point of nK. At
ISooK the magnetic susceptibility X is 1.8 X 10-' per mole.
(i) If temperature is decreased below ISooK, how will the susceptibility
change?
(ii) At what temperature will the susceptibility have maximum value?
(iii) At what temperature ..viii the susceptibility have minimum value?
(b) A magnesium ferrite has composition
19.8.
(e)
and has a lattice constant of 8.40 . The FeJ+ ion has a magnetic moment of
S Bohr magnetons. Compute the saturation magnetization which this material
would I.ave.
It is desired to use the aboye ferrite in a solid-state device which requires high
nitial pcrmeability and low coercive force. What sort of microstructural
features would you aim for in processing the material?
Index
1018
Areal analysis, 528
Asbestos, 7, 79
Atomic, bonding in solids, 4lff
mobility, 220
structure, 25ff
Auger spectroscopy, 20 I
Austenite, 83
Autocatalytic effects, 355
Avrami:322
Azimuthal quantum number, 977
Balling milling, 484
. Band gap of ceramics, 155
BaO, crystal structure, 61 .
BaO-SiO, , phase diagram, 114
submicrostructure, 113ff
Base exchange capacity, 76,135
BaTi0 3 , crystal structure, 67,968
ferroelectric properties, 967
microstructure, 566
BaTi0 4 -TiO, system,294
Batteries, 863
Bauxite,8
Bayer. process, 8
Beer-Lmbert equation, 655
BeO, crystal structure, 61
BeO-AI,03 system, 284
Beryl,79
lliot's modulus, 820
Bisque fire, 11
lllack coring, 504
lllackbody radiation, 613
Bloch temperature, 987
B, 03' structure, 102
Bohr atom, 27
Bohr, magneton, 977
theory,26
Bond strength, 59
Bonding, covalent, 38
intermediate typ8S, 39
ionic, 36,41
energy,41
metallic, 39
Van der Waals, 39
Borax,8
Bom-Haber cycle, 143
Boron nitride structure, 78
Boundary layer, 409
Boundary stresses, 197
in laminates, 198
INDEX
INDEX
in threc-dimensional structures, 199
Bravais lattices, 51,53
Bricks, fire-clay, 306
high-alumina, 305
supersilica, 306
Brouwer diagrams, 160ff
Brucite, structure, 78
Bulk modulus, 771
Burgers vector, 164,714
CaF, , crystal structure, 66
Calcination reactions, 414
Calcogenides, 998
CaD, crystal structure, 61
CaD-Al, 03 -SiO" diffusion in, 262
Capacitance,914
Capillary forces, 10
pressure, 498
rise, 186,210
Carbide structures, 78
Camegieite, 70, 72
CaTi0 3 crystal structure, 67
Cauchy formula, 664
CaZr0 3 crystal structure, 67
CdFe,0 4 crystal structure, 64
CdO crystal structure, 61
Cellular structure, 354
Celsian, 79,373
Cement, ciment fondu, 569
high-alumina,569
microstructure, 569
portland, 569
Ceramic, ind ustry, 3
processes,4
proaucts, 16
Ceramics, definition, 3
Cermet systems, 498, 573
Chalcogenide glasses, 886
Chamber kilns, 12
Chemical diffusion coefficient, 398ff
Chemical potential, 132
Chemical vapor transport, 403
Chromosphore, 655, 679, 681
Chrysoberyl,79
Chrysotile,7
Clausius-Clapeyron equation, 273
Clay minerals, 6
crystal structures, 73
Cleavage crack, 793
Cleavage planes, 783
~T
Clinker, 571
Close-packed cubic structure, 47
Close-packed hexagonal structure, 50
CoAl, 0 4 , crystal structure, 64
Coatings, 13
by flame-spraying oxides, 574
Coercive field, 966
Coercive force, 983
Coercivity, 1002
Coesite,273
Coke,577
Collision frequency, molecules, 3 ~ 1
Color, 678
brightness, 687
hue,686
Muncel system, 688
saturation, 687
specification, 685
Colorants,681
constituents,678
enamels,685
glasses,685
glazes,685
for silicate glasses, 682, 683
Color centers, resulting from bombardment,677
resulting from impurities, 677
Compatibility triangles, 300
Compensation temperature, 999
Complex defect, 148
Composition, of commercial glasses, 109
of dielectrics, 956
of refractories, 542
of triaxial porcelains, 532ff
Condensation coefficien t, 331
Conductivity, dielectric, 925
electrical, 847
Conductivity isotherm, 857
Configurational entropy, 140
Consulute temperature, 289, 323
Constitutional supercooling, 355
Contact angle, 209ff
Contrast ratio, 670
Conversion factors, practical and esu units,
850
CoO, crystal structure, 61
defects in, 159
diffusion, 244
Cooling rates for glass formation, 350
Coordination number, 44
1019
1020
diamond,44
fluorite,68
gamet, 999
graphite, 78
oxides, 6 I ff
perovskite, 68, 968
rock saIt, 42
silica types, 71, 72
spinel, 64, 992
wurtzitc,63
zinc bIend, 63
CrystaIline glazes, 361
mat, 361, 362
Crystallization paths, 303
Crystal systems, 5 1,54
CsCI crystal structure, 61,66
CsI crystal structure, 6 I
Curie law, 984
Curie temperature, 965, 972, 985, 989,
994
::urie-Weiss law, 965
::urved surfaces, pressure difference, 185
hrken equation, 232, 387
Jealkalization, 843
le I3roglie equation, 30
Jebye eq uations, 929
lebye-Huckel screening constant, 859
lebye-I-luckel theory, 148
lebye temperature, 586, 615,621
lebye theory, specific heat, 586
'ecomposition, blistering during, 505
kinetics, 418
rcactions, 504
spinodal,431
trapped gases, 506
dectrons, unpaired, 979
efect reaction equations, rules, 129, 130
cfects, association of, 148
130m repulsion, 144
chemistry, 129
concentrations, 142
Coulomb interactions, 144, 149, 150
iensi ty changes, 136
:ffective charge, 129
mergies of formation, 144
'renkel, 126
nteractions, 129
nterstitials, 125, 128
ntrinsic, 144
e ;7
UP'
1NDEX
,\
aro.]7
r: Pf'
1NDEX
notation, 126
oxygen pressure effects, 158ff
polarization effects, 144
Schottky, 126
Defloccula ted particles, 11
Deformation, Al, 0 3 crystals, 728
flourite structure, 727
microscopic tllCory of, 7 I 6
rock saIt structure, 710
Deformation-mechanism map, 743
Degrees of freedom, 270
Dehydra tion reactions, 414
Density, 589
changes with temperature, ceramics, 589
glasses, 595
and defects, 136
measurement, 531
of states, 153
thermal history effects, 596
Dendritic growth, 355
Derivative crystal structures, 69, 80
Devitrite, 299
rate of growth, 356
Diamagnetism, 978
Dialllond structure, 44
synthetic, 273
Dielectric, breakdown, 930
of glasses, 961
conductivity, 945
constant, 647, 914
of crystals and glasses, 931
effeets of porosity, 949
frequency dependence, 923
physical properties of, 954
polyphase ceramics, 947
typical values of, 933
1055, factor, 647, 914
for crystals and glasses, 937
mixture rules, 947
properties, 913
resistivity,914
strength,960
effects of porosity, 963
Diffuse interface, 182, 183
Diffusion, activation energy, 227
ambipolar,400
and sintering, 401
boundary conditions, 223
chemical or in tero, 232
creep, 739, 741
37 "
77
1021
tension, 169
100p,716
mixed,166
mobility, 722
screw,164
strain energy, 171
surface, 250ff
velocities, 719
Dispersion, 650
normal,663
relative reciprocal, 651
and wavelength, 653
Distribution coefficient, 353
Dolomite,8
Domains, I3aTiO., 566
bubble,1001
ferroelectric, 966
magnetic,980
Weiss,979
Domain walI, 981
d-orbitals, 679
Drain casting, 11
Drift, mobility, 869
velocity, 847
Dry pressing, 10
Eddy-current 1055,1012
Effective charge, 129
Effective mass, 154, 866
Elastic modulus, 705,770
porosity, 775
in two-phase systems, 773
typical values, 777
see a/so Young's modulus
Electrical and magnetic units, 916
Electrical breakdown,930
Electrical ceramics, microstructure, 560ff
Electrical conduction, 847
in Cu, 0,895
and diffusion, 852, 873
effect of grain boundaries, 906
effects of porosi ty , 906
electronic, 866, 884
in glasses, 873, 884
hopping mechanism, 870
in insulators, 902
ionic, 852, 873
in NiO, 899
and nonstoichiometry, 888
polarization, 874
1022
INDEX
1NDEX
polaroiJ, 870
precipitation effects, 856, 857
in semiconductors, 888
in SiC, 898
in SrTi0 3 , 889
in TiO, , 897
typical valucs, 851
in ZnO, 891
E1ectrical-migration ion-exchange, 843
Electrochemical potential, 391
Electrolytes, 864
Electromagnetic waves, in ceramics, 646
Electron affinity, 35, 39
Electron, acceptors, 156
configura tions, 27
donor levels, 156
" energy band levels, 152
energy levels, 46
holes, 125
mobility, 868, 869
orbits, 30
Electronegativity scale, 39,40
Electronic conductivity, in crystals, 866
in glasses, 884
in nonstoichiometric materials 888
typical values, 867,886-889 '
Electrooptic materials, 698, 700
Electrostatic potential, 194
Enamels, 13
microstructure, 549
network formers in, 105
Encrgy, band gap, 154, 868
of defect ionization, 155
of ionic bonds, 41
Enstatite, 79, 287
Enthalpy,22
of diffusion, halides, 236
and entropy diffusion in KCI, 236
Entropy,22
Error function, 224
Eucryptite, 80
,a-Eucryptite, 371
Euler's law, 523
Eutectic system, 281
Evaporation rate, 403
Exchange integral, 989
Excess entropy and enthalpy, 279
Exciton, 125
Extinction coefficient, 640
Extrinsic diffusion, 235
Extrusion,10
Forsterite, 79, 301, 310
ceramics, 308
dielectric, 953
Fracture, brittle, 769, 783
cleavage, 769
crack velocity, 802
effects of microstructure, 808
intergranular, 769
processes, 769
static fatigue, 797ff
stress corrosion model, 800
surface, conchoidal, 769
cup and cone, 769
energies, 796
toughness,787
Framework structures, 79
Frank-Read source, 169, no
Free energy, composition curves, 280
of formation, oxides, 394
Frenkel disorder, 126, 139
Fresnel's formula, 654
Friction, die-wall, 485
Frit, 361
Fused silica, 625
Fusion-cast ceramics, 354
Face-centered cubic, 47
Faraday constant, 392
Fa tigue, 769
F centers, 677
FeAI, 4' crystal structure, 64
Feldspar, 7, 79
FeO, crystal structure, 61
defects in, 158
Fermi, energy, 152, 154
level,152
statistics, 153
Ferrimagnetic materials, 979
direct exchange in teraction, 989
double exchange interaction, 990, 991
superexchange in teraction, 990
Ferrite, barium, 1001, 1002
applications of, 1006
hexagonal, 1001
magnesium, 1012
manganese, 994
manganese-zinc, 1006
mixed, 995,996
nickel,995
nickel-zinc, 1010
polycrystalline, 1006
properties, 993
thin films, 1013
zinc, 996
Ferroelectrici ty, 964
Ferromagnetic materials, 979
Ferroxdure, 1002
FeTi0 3 crystal structure, 69
Fe, TiO 4 crystal structure, 66
Fiber optics, 695
Fick's laws, 219
Fictive temperature, 599
Fining, 554
Fire-clay brieks, 306
Firing shrinkage, 507
differential,509
Fish scaling, 551
Fisher equation, 250
Florescence, 689
Flourescent lamp, 689
Flourite crystal structure, 66
Fluorspar, 8
Flux density, magnetic, 976
FOJming and firing, 9ff
.1
'1
'{
I
1023
specific volume, 92
structural units, 104
structure, of borates, 108
of germanates and phospha tes, 110
submicrostructure, 110
thermal conductivity, 624ff
viscosity, 93, 755
Glass-ceramic materials, 368
Corning ware, Cer-Vit, Hercuvit, 371
Li, O-Al, 0 3 -SiO, system, 369
microstructure, 555
nucleation, 368
properties of, 374
time-temperature cycle, 369
Glass formation, 13, 92ff, 312, 347ff
by chemical reaction, 94
by condensa tion, 94
critical cooling rate of, 347
by electrode'position, 94
by solidifica tion, 92
Glass miscibility gap, 110,117
borates, 117
MgO-SiO, , 111
oxides, 117
Glass structure models, crystallite, 95
micelles or paracrystals, 100
pentagonal dodecahedron, 98
random-network,95
Glass transformation range, 92
Glass transition, temperature, 93
thermal stress, 839
Glass wool, 577
Glazes, 13
compositions, 106
mat, 550
microstructure, 549ff
network formers in, 105
stresses, 609, 610
Glide, band, 716. See a/so Slip
Gloss,664
Grain boundary, 177ff, 188ff
angle of disregistry, 188
coincidence, 190
high-angle, 190
mobility, 456
phase separation, 200[f
potential, 190ff
segregation, 200[f
sliding, 740, 807
stress fields, 202
1024
stresses, cracking, 197
Grain growth, abnorrnal or discontinuous,
449
discontinuous or exaggerated, 461,487
growth ra te, 449
inclusion effects of, 455
induction period, 449
inhibitors, 457
liquid phase, 460, sal
rate equations, 452
residual,458
solute effects of, 455
Graphite, pyrolytic, 574
structure,78
Griffith flaws, 787
Griffi th-Orowan-Irwin analysis, 785, 786
Grog, 508
Growth rate, anisotropy, 336
Gypsum, 572
Hall effect, 870
Ilashin and Shtrikman model, 774, 775
Heat capacity, 583
porosity, 588
structural changes, 588
temperature dependen ce, 586
theory, 586
Hedvall effect, 425
Helmholz free energy, 22
Hexagonal c10se packing, 51
High-alulllina brick, 305
IIigh diffusivity paths, 234
High eucryptite, 70
Hole concentration, 866
Ilomologous temperature, 743
Hooke's law, 770
I-Iopping mechanislll, 870
llot pressing, 501, 502
Iund's rule, 978,990
Hydrogen bond crystals, 45
Ilydrostatic molding, 10
I-Iysteresis, ferroclectric, 965
loop, 965, 983
loss, 1012
magnetic, 981
Ideal solution, 279
llmenite crystal structure, 69
Immiscibility, 11 8ff
lncipient surface energy, 325
INDEX
INDEX
Inc1usion partic1e, mobility, 458
lncongruent meIting, 285
Inductance, 915
Induction period, 449
Insulation, high-frequency, 953
Intensive variables, 270
thermal,612ff
Interatomic bonds, 36
Interconnectivity, 376
Interdiffusion,386
Interface, adsorption, 208
glazes,211
metal brazes, 212
structure, 204
thermodynamic properties, 179
Interfacial energy, values, 206-209
In terstices, 49
In trinsic,' diffusion, 238
electronic defects, 153, 161
semiconductors, 152, 153
Inversion, tetragonal-monoc1inic, 83
Ion, exchange process, 374
mobility, 852, 854
units,221
lonic conductivity, applications of, 863
in alkali-free glasses, 882, 883
in crystals, 852
in glasses, 873
transference numbers, 853
lonic crystal radii, 58
lonic crystal structures, 62
lonic crystals, 4lff
lonic diffusion, incrystals, 239
clectrical conduction, 852, 873
dielectric loss, 937
in glasses, 257
polarization,933
lonization, energies, 32ff
potential, 39
Isostatic pressing, 10
Jadeite, 79
Jiggering, I 1
Jump frequency, 222
Kalsilite, 70
Kaolin, decomposition, 419
- dielectric losses, 940
ion substitution, 134
structure, 6, 75
KCl,235
defect formation entropy and enthalpy,
236
diffusion entropy and enthalpy, 236
dislocations in, 173
ionic bonding of, 36
Kernite,8
Kilns, 12
Kinematic viscosity, 410
KN BO 3 crystal structure, 67
Knudsen equation, 402
K, O crystal structure, 67
Kroger-Vink Notation, 127
Kyanite, 79
1025
in glass, 781-783
mechanical, 779
Loss factor, 925
Low angle grain boundaries, 172
Low-Ioss steatite, 309, 3 I O
Lucalox, 481
Madelung constant, 43
Magnesia-ehromite brick, 291
Magnesite,8
refractories, 308
Magnetic moment, 977
permanent,977
Magnetic ceramics, 975ff
compositional effects, 1007, 1008
effect of microstructure, 1013
effect of processing on, 1006
ferrites, 991
hexagonal, 1001
grain size effect, 1008, 1010, 1011
ilmenites, 100 I
microstructure, 560ff
orthoferrites, 100 I
permanent,1002
porosity effect, 1008, 1011, 1012
rare earth garnets, 998
soft,983
spinels, 991
Magnetization, saturation, 982
Magnetocrystalline anisotropy, 1002
constant, 994
Magnetostriction,981
Mass-action eq uilibria, 129
Mean free path, 615
Melting, incongruent, 287
and solidification, 12
Mercury porosimetry, 532
Metal crystals, 45
Metal-deficient oxides;diffusion, 242
Metal line, 409
Metasilicates, 70, 79
Metastable equilibrium, 269
Metastable phases, 3l!ff .
erystalline, 3I 2
glass, 3 I 2
from incomplete reaetions, 316
MgAl,0 4 crystal structure, 64
MgFe,04 crystal strueture, 66
,MgO, boundary diffusion, 254, 257
crystal structure, 61
1026
INDEX
INDEX
NaC!, Ca-surface segregation, 201
defect energies, 144, 150
grajn boundary velocity, 456
ionic conductivity, 855
space charge, 194ff, 197
structure, bonding energy, 41
Na, O crystal structure, 67
Na, O-SiO, , phase diagram, 287
Neel tempera ture, 985
Nepheline, 72, 373
Nernst-Einstein Equation, 220, 854
Network, formers, 97
intermediates, 97
modificrs,97
NiAl, O. crystal structure, 64
NiO, crystal structure, 61
electrical conduction, 899
grain boundary energy, 190
Nitride structures, 79
Nonequilibrium phases, 311
Nonisothermal processes, decomposition,
443
precipitation,440
sintering of glass spheres, 444
Nonstoichiometric solids, 157
"Nonwetting," 210-211
Normal spincl, 64
Nucleation, 328ff
critical nucleus, 330
at the grain boundary, 437
grain growth, 449
and growth, 321
heterogencous, 333
homogeneous,329
gas-phase, 405
rate equations, 321, 331-333
in solids, 431
surface energy, 328
temperatures, 334
Obsidian glasses, 16
Octahedril interstices, 49, 53
Oersted, 976
Olivine minerals, 79
Opacification, 666
TiO" used for, 363
Opacified enamels, 363
Opacifiers, 551
for silicate glasses, 669
typical examples, 763
.\,
, ~f'
-...:.~)
I,
1027
EcO-Al, 0),285
CaO-SiO" 118
Carbon (T-P), 274
Co-Ni-O,295
Fe-Fe,03,284
FeO-Fe, 0),283
Fe-Cr-O,296
FeO-SiO,,118
H O (T -P), 272
K: Al, Si. O " -SiO, , 289
K, O-Al, O) -SiO, ' 298, 300
K, O-SiO" 119
K,Si,Os-SiO,,315
Li, O-SiO, ' 119
MgO-AI, O)' 133
MgO-Al, O) -SiO, , 307
MgO-CaO,290
MgO-MgCr, 0 4 ' 291
MgO-NiO,132
MgO-SiO" 112,118,288,302
Na,E. O" -SiO, , 113
Na, O-B, O) -SiO, , 121
Na, O-CaO-SiO" 122
Na,O-CaO-SiO,,297
Na, O-SiO" 119, 359
Na,SiO)-SiO,,288
NO-CoO, 290
SiO, polymorphic, 87
SiO, (T-P) , 274
SrO-SiO,,118
TiO, -SiO, , 119
ZnO-SiO" 118
ZrO, -ZrCaO), 293
Phasc-equilibrium diagrams, 269ff
binary, 278
measurements, 276
tcrnary, 295
Phase, microscopy , 518
rule, derivation of, 270
relative amounts present, 526
separation, 280
glass, 111
transformations, 320
Phonon conductivity, impuritics and
solid solutions, 621
porosity effects, 638
scattering at grain boundary, 619,620
Phonons, 125
Phosphors, 689
cathode-ray tubes, 692
1028
INDEX
INDEX
lamp,691
Photon, 26
attentuation, 628
mean free path 01', 628
Photon conductivity, apparent, 633
effects 01' boundaries on, 630
mean free path, temperature dependence
629
'
Piezoelectric, 971
Pigments, 685
Planck, equation, 30
theory, 26
Plaster 01' paris, microstructure, 572
mold,ll
Plastic deformation, 7051'1'
Point counting, 528
Poisson's ratio, 770
Polarizability, 919
electronic, 660
molar, 921
Polarization, 658, 918
01' electrode, 936
ion jump, 933
mechanisms for, 921,922
remanent, 966
saturation, 966
spontaneous, 964,967
Polaron, 870
Polygonization, 175,452,737
Polymorphism,81
Polytypes,81
Pore, agglomeration, 458
stability, 488
Porcelain, 299
cordierite, 309, 310
enamels, 361
steatite, 309
Porosity, effects on creep, 745
measurelllent, 518,532
open and closed, 520, 531
in refractories, 547
Portland cement, 16
Potash feldspar, 289
Powder reactions, 420
Precipitate, coarsening, 425
coherent, 43 I
noncoherent, 431
structure, 437
Precipitation, 430
in crystalline ceralllics, 430
in enamels, 363
in glass-ceramics, 368
in glasses, 320, 375
at grain boundaries, 200
in glazes, 361
hardening, 724
heterogeneous, 437
kinetics 01',432
of.a metastable intermediate, 433, 435
oIlentation 01',433
01' solutes, 151
Principal quantum number, 27
Proportionallimit, 706, 770
Protoenstatite crystals, 309
Pyramidal system, 730
Pyrex, 118, 120,627
Pyrolytic graphite, 15
Pyrophyllite structure 75
Pyrosilicates, 70, 79 '
Pyroxines, 79
Q factor, 927
Quartz, 70, 80
Quartzite, 543
Radial distribution function, 94
Random-walk diffusion, 222
Raw materials, 5
Rayleigh relation, 656
Reaction, order, 381
products, interdiffusion, 387
rate, virtual maximum, 384
for powders, 422
theory, 228
heterogeneous, 38lff
through fluid phase, 402
Recrystallization, 4491'1'
primary, 449
secondary, 461
tempera ture, 451
Reflectivity, 670
boundary, 664
coatings, 664
total internal, 695
Refractiveindex, 647,650,651,652,662
Refractivity, molar, 658, 660
Refractories, baddeleyite, 548.
basic, 543
chelllically bonded 544
'
chrome, 544
\
I
;.','
compositions, 542
corundum, 548
dolomite, 547
fire-clay, 541
fu sed alumina briek, 548
fusion cast, 547
glass tank, 307
periclase, 544
silica, 541
thermal-insulating, 548
Refractory corrosion, 407,413
Regular solution, 279
Remanence,982,983
Residual porosity, 458
Resistivity, for commercial glass, 885
for insulators, 9021'1'
for refractories, 905
Resonance peak, 1006
Reuss model, 774
Rock salt structure, 61
Rubies, 133
Rutile crystal structure, 66
Safety glass, 830
Sapphirine, 308
Schottky disorder, 126, 127, 143
Schrodinger wave equation, 30
Seebeck effect, 871
Seed,554
Segregation, at grain boundary, 201
Semiconductors, deficit, 895, 896
excess, 893
Il-type, 889
valency-controlled,899
Serpentine, 301
Shear strain, 170
Shivering, 609
Silica bricks, 305
Silicate, crystal structures, 70
glasses, 103
Silica gel, 94
Silicates, diffusion in, 261
01' raw ma terials, 5
surface tension, 207
Silicon carbide, 8
SiIlimanite,79
Simple curbic structure, 47
SiO" density 01',70
g1ass structure, 100
metastable forms, 275
1029
vaporization, 403
Single crystal growth, 15
Czochalski, 15
hydrothermal, 15
vapor deposition, 403
Verneuil, 15
Sintering, 469
agglomerates, 481
ball milling, 484
dihedral angle, 486
driving force for, 469
evaporation-condensation, 470
liquid phase, 491
mechanisms, 474
nonisotllermal,444
particle size, 477
pore clusters, 485
pore elmination, 475
pore stability, 488
> witll a reactive liquid, 498
solid state, 474
solu te effects, 479
volume sllrinkage, 12
Skove kiln, 12
Slip, 710
bands, interaction 01', 793
casting, 385
plane, 163
systems, 712,714
SnZn, O. crystal structurc, 66
Soda asll, 8
Sodium chloride structure, 41
Sodium silicate, diffusion in, 262
Solarization, 678
Solid casting, 11
Solid solution, 13lff
density changes, 1361'1'
in terstitial, 126
substitutional, 126
substitution factors, 134
Solubility, temperature dependence 01',
135
Solute hardening, 719,723
Space-charge, at boundaries, 1901'1'
effects on grain growth, 456
p01arization, 875,953
width,196
Space lattices, 51
Spalling, 541, 822, 825
Specific heat, 584
lln;
1030
INDEX
strain curve, 705
Structure, of crystals, 25ff
of oxide glasses, 100ff
of surfaces and interfaces 204
Substructure formation, 74'2
Superparamagnetic ma terial 1014
Supers~~uration nucleation.'332
Superslhca bricks, 306
Supcrstructure,69
Surface, 177ff
active components, 182
effects ofimpurities, 181
energy, ~06, 208, 209
gradient term of, 182
value of, 183, 206-209
stress, 178
tension, 177ff
liquid, 177
solid, 178
Susceptibility, diamagnetic 978
electric, 919,964
'
magnetic, 976, 977
paramagnetic, 979
Talc, 7,309
Tempering, chemical, 841
stress distribution, 831
stress profile, 841, 842
thermally, 830
Tcnsile strength, 706, 769
TeO, crystal structure, 66
Ternary systems, 299
Terracotta, 508
Tetrahedral interstices 49
Thermal, breakdown, 960
Thermal conduction, 612ff 584
compositional effects in dlasses 627
effects ~f, neutron irradiation 624
poroslty, 637
'
structure 618
effective, 633, 638
effective radiation, 638
~missivity effect, 633
m gases, 612
gl~sses, by photons, 624, 627
mlcrocr~ck porosity, 640
on multtphase ceramics, 634
by phonons, 612-614, 618
phonon
613 scattering (Dmkl app processes),
:,1,:.
~'
/-
1:
\
~ !
632
by l'hotons, 631
in powders and fibrous materials, 640
radiant-energy transfer in pores, 638
by ndiation, 614
of stabilized zirconia, 623
temperature dependence, 615, 625
in translucent materials, 639, 640
in DO, -ThO, systems, 623
Thelmal diffusivity, 585
Tilerm,J etching, 212
Thermal expansion, 584
alJi,ometric crystals, 594
uf ccramics, 591ff
cocllicient, 591
of hystersis, 607
composites, 603
COJllposition dependence, 599
of gla~ses, 595ff
polY 1110r phic transformations, 606
tcmpc'rature dependence 591
Tkrmal properties, 583ff '
sliock~ crack propagation, 825ff
fracturc initiation, 822
rdractorics, 547
rcsistance, 822
spi,lling, 825
S1l0:s5,816
eooling rate, 838
from temperature change, 820
in various shapes, 819
strcsscS, 603
Tllcrmisior, 902
Tltennoclectric effect, 871
ThO, crystal structure, 66
Tliumpson-Freundlich (Kelvin) equation,
4Li,471
TitO, -DO, ,albite-anorthite, 133
Ti\l \)o\IJldaries, 188
Tic linc, 279
liO, crystal structure, 66
TOllghness, 796
Trill\slence number, 853
Trnsformation, displacive, 83
higll-low,82
in austenite, 83
in BaTO., 83
in SiO, , 86
in ZrO, ,83
order-disordcl, 145,14/
polymorphic, 82
reconstructuve,86
structural characteristics of, 82
twins,83
Translucency, 666, 672
porosity,674
Triaxial, porcelains, 496
white ware, changes during firing, 534
compositions, 532ff
dental porcelains, 534
fired microstructure, 535
hard porcelain artware, 534
hard porcclain tablcware, 534
hotel china, 534
low-tension e1ectrical porcelain, 534
mullite, 534, 535
semivitreous ware, 534
translucency, 534
Tridymite, 70, 80
l' -T:r curves, 347ff
Tunnel kilns, 12
Turbidity cocfficient, 656
Twinning, 710
Twist boundaries, 188
Ultramarines, 80
DO, , boundary diffusion, 251
crystal strllcture, 66
diffusion coefficients, 248
Vacancy pair, 148-150
Vapor growth, 341,405
Vaporizaton, 402
Vegard's law, 131
Viscoelastic behavior, 771
Viscous, deforma tion, 609
f1ow,absolute rate theory, 758
compositio nal dependence, 763, 765766
excess-entropy theory, of, 759
free-volum e theory of, 758
of glasses, 755
temperaturc dependence, 759
time dependen ce , 761-763
Vitrification,30lf f
kinetics, 491
silicates, 495
Vogel-Fulcher relation, 759
-------------'lII'--__
~.lIItrllllllllill.IIi$lm1
llIWi'WIllIiIII'III'
!
1032
Voigt model, 774
Volume fraction, 528
Vycor process, 110, 118
Warping, 508
\Veibull statistics, 787, 788
\Veiss (or molccular)constants, 986
Wetting and phase distribution,
209
angle,211
of solid surface by a liquid, 209
Williams-Landel-Ferry (WLF) relation,
758
Wollastonite,79
Wulff theorem, 430
\Vurtzite structure, 61
Wustite (FeO), defects in, 158
Pn
INDEX
; 1
,.
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