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PFC Converter
Zhengyang Liu, Xiucheng Huang, Mingkai Mu, Yuchen Yang, Fred C. Lee, Qiang Li
Center for Power Electronics Systems
The Bradley Department of Electrical and Computer Engineering
Virginia Polytechnic Institute and State University
Blacksburg, VA 24061 USA
Abstract This paper presents the design consideration and
performance evaluation of gallium nitride (GaN) high electron
mobility transistor (HEMT) based dual-phase interleaved MHz
critical conduction mode (CRM) power factor correction (PFC)
converter. A 1.2kW 1-3MHz interleaved boost PFC converter
prototype is built with 97.9% peak efficiency and 120W/in3
power density. The significant impact of MHz frequency is
demonstrated as dramatically size reduction of boost inductor
and electro-magnetic interference (EMI) filter. Several inductor
designs are discussed. The corner frequency of EMI filter is
pushed to several hundreds of kHz. Finally, the limitation of
conventional boost PFC converter is discussed as high
conduction loss on diode rectifier bridge and high switching loss
caused by valley switching, which is negligible in other low
frequency PFC converter but significant in MHz PFC converter.
The totem-pole bridgeless PFC converter is introduced to
further improve the efficiency with no rectifier bridge and zerovoltage switching (ZVS) extension strategy.
I. INTRODUCTION
The critical conduction mode (CRM) boost power factor
correction (PFC) converters are widely used in off-line power
supplies due to its merits of zero-current switching (ZCS)
turn off of the diode and zero-voltage switching (ZVS) or
valley switching turn on of the main switch [1-3]. By
interleaving two CRM boost PFC converters, the ripple of the
input and output current and the size of the input differential
mode (DM) electromagnetic interference (EMI) filter can be
reduced significantly, while the power rating can be extended
to a higher level [4]. In addition, phase shedding strategy can
be used to improve the light load efficiency.
With the advent of 600V-class gallium nitride (GaN) high
electron mobility transistor (HEMT), the converters
switching frequency is able to be pushed to multi MHz. This
is a dramatically improvement compared to the high
frequency capability of a silicon (Si) based power
semiconductor device. Previous research has demonstrated
that the switching loss is dominant of total loss in MHz
frequency hard switching condition, and soft switching is still
critical to achieve high efficiency for the high voltage GaN
HEMT [5-7].
This work was supported primarily by the Power Management
Consortium (PMC) in CPES, Virginia Tech
611
D1
D2
L1
D1
L2
D2
D3
+
CO
VIN
Load
-
S1
S2
Master
Phase
Controller
Slave
Phase
Controller
600V
SiC Diode
2.7 inch
D4
600V
GaN HEMT
TSW /2 Delay
3.6 inch
Vin
IL2
IL1
10
5
Vin=240V
3
Vin=200V
1
Frequency (MHz)
Frequency (MHz)
10
(a)
20%PO
Vin
(100V/div)
50%PO
VDS_2
100%PO
(100V/div)
1
1/120
IL2
(a)
(b)
Figure 2. Variable frequency in half line cycle with (a) different input
voltage at full output power, (b) 230Vac input and different output power
IL1
1/240
Time (ms)
1/120
1/240
(10A/div)
Time (ms)
Valley Switching
ZVS
(10A/div)
(b)
(c)
Figure 4. Experimental waveforms of dual-phase interleaved CRM PFC
at full load, (a) waveform in line cycle, (b) zoom-in waveform when
vin>1/2Vo, (c) zoom-in waveform when vin<1/2Vo.
Table 2. Testing results of the PFC converter
Input voltage
230Vac
Output voltage
380V
Full power
1.2kW
Peak efficiency
97.9%
Power density
120W/in3
Input current THD
9.7% @ full load
Power factor
0.995 @ full load
Figure 6. Loss breakdown (single phase, full load, averaged in line cycle)
612
Material
Shape
Relative permeability
Winding
Turn
Core loss density (at Vin(t)_peak)
Air gap
Core loss (at Vin(t)_peak)
Winding loss (at Vin(t)_peak)
Inductor 1
Ferrite
Ferroxcube
3F45
ER23/3.6/13
900
400/44 AWG
12
500kW/m3
1.8mm
1.8W
5.2W
Inductor 2
Powder
Micrometals
-2
T80(20.2/12.6/6.35)
10
400/44 AWG
34
4000kW/m3
3.11W
0.54W
20mm
23mm
1.8mm
9mm
12mm
23mm
23mm
(a)
(b)
Figure 7. Inductor design comparison. (a) inductor 1, (b) inductor 2
(a)
(b)
Figure 8. Simulated magnetic field strength in the winding regions of two studied cases, (a) The field penetrating the winding region
in ferrite inductor (case 1), (b) The field penetrating the windng region of powder inductor (case 2)
613
10
Ferrite
420/46
Powder
420/46
10
R
(ohm)
Rac
(ohm)
10
304
808
1800
2912
451
570
3110
4131
420/46
330/46
250/46
175/46
10
-1
10
-2
10
10
5
10
10
Rac (ohm)
10
Freq (Hz)
-1
10
-2
10
10
10
10
Freq (Hz)
614
Measurement
Amplitude (dB)
120
Prediction
EN55022 class B
quasi peak standard
100
80
60
40
100k
1M
10M
100M
Frequency (Hz)
(4)
Figure 8 shows the distribution of instant loss and half line
cycle averaged loss with different input voltages. Although
the equation is complicated, the trend is clear that such
switching loss is significant and increase with input voltage.
To solve the non-ZVS problem of CRM boost PFC
converter, totem-pole bridgeless PFC converter, which can
achieve full input voltage ZVS by operating in quasi-square
wave (QSW) mode in certain conditions, is seems a good
candidate. Several papers [15][16][17] have talked about this
possibility and demonstrated in Si-based totem-pole
bridgeless PFC converters. Paper [18] demonstrates a 50kHz
frequency CCM hard switching totem-pole PFC reaching
99% peak efficiency. The specialty for GaN-based MHz PFC
converter is that the non-ZVS loss is quickly becoming the
most significant loss (Figure 8(b)) which is not often true for
Si-based comparatively low frequency PFC converter.
To solve the non-ZVS issue, quasi-square-wave (QSW)
mode operation is adopted in the region that the input voltage
is than one half of the output voltage. Figure 12 shows the
simulated line cycle input voltage and current waveform.
615
ACKNOWLEDGMENT
The authors would like to thank Transphorm Inc. for
providing GaN device samples.
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616