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TRANSISTORS

AND
AMPLIFIERS

I.TRANSISTOR
FUNDAMENTALS
Transistor

Developed in December 23, 1947


in Bell Laboratories
By John Bardeen, William Shockley,
and Walter Brattain
Basically a reSISTOR that amplifies
electrical impulses as they are
TRANsferred from its input to its
output terminals

1. Bipolar Junction Transistor


It is a three layer semiconductor
device consisting of either two Ntype and one P-type layers of
materials or two P-type and one Ntype layers of semiconductor
materials.

Three Regions of BJT


Base

Region to which carriers flow from


emitter to collector.
1017 dopants/ cm3
Moderately doped

Three Regions of BJT


Emitter

Region from which carriers flow


1019 dopants/ cm3
Heavily doped

Three Regions of BJT


Collector

Region to which carriers flow


1015 dopants/ cm3
Lightly doped
Largest

BJT Structure and Construction


Metal contacts

Emitter
Base
Collector
Substrate

Epitaxial Planar Structure

BJT Structure and Construction

base

collector

collector

base

emitter

emitter

npn-type

pnp-type

Transistor Currents and Configuration


Common Base
Configuration
Vi
Vo
E
C
In this circuit, the
input
signal
is
applied
at
the
emitter, the output
is taken at the
collector and the
base is the common
terminal.
This has very low
input impedance.

Ie
RE

VEE

Ic
RC

VCC

Transistor Currents and Configuration


Alpha

()

In the dc mode, the levels of IC and IE due to


majority carriers are related by a quantity called
alpha and defined by the following equation:

Ic
Ie

Transistor Currents and Configuration


Common Emitter
Configuration
Ic
The input is applied to
Vi
the base, the amplified
output is taken from the
collector
and
the
emitter is the common R
B
terminal.
The circuit is the one
generally
used
for
transistors because this
has
the
best
combination of current
and voltage gains.

Ib

Ie

Vo
RE

VBB

Ie = Ib + Ic

VCC

Transistor Currents and Configuration


Beta

()

the ratio of collector current to the base current .

Ic
Ib

Transistor Currents and Configuration


Common Collector

Configuration

This circuit has the


input applied to the
base, the output taken
at the emitter terminal
and the collector is the
common terminal.
Impedance matching.

Vi

Ic

Ib

Ie

Vo

RB
RE
VBB

VCC

Transistor Currents and Configuration


Gamma

()

the ratio of collector current to the base current .

Ie
Ib

Comparison of Amplifier Configurations


Characteristic

Common Base

Common
Emitter

Common
Collector

Power Gain

moderate

highest

moderate

Voltage Gain

highest

moderate

Lowest (less
than 1)

Current Gain

lowest (less
than1)

moderate

highest

Input
Impedance

lowest

moderate

highest

Output
Impedance

highest

moderate

lowest

none

180o out of
phase

none

Phase
Inversion

Transistor Biasing
Bias
An electrical, mechanical or magnetic force
applied to a device to establish a desired
electrical or mechanical reference level for its
operation.
Is a DC voltage or current that sets the
operating point for amplifying the AC signal

Transistor Biasing
Fixed Bias
Is taken from a battery or power supply
VCC
RB
Vi

RC
Vo
C

Transistor Biasing
Self Bias
The amplifier produces its own DC voltage from
an IR drop across a resistor in the return circuit
of the common terminal.
Self bias is probably the type of bias used most
often because it is economical and has stabilizing
effect on the DC level of the output current.
Can be emitter stabilized or collector stabilized.

Transistor Biasing
Self Bias
VCC
RB

RC
Vo

Vi

C
C
RE

Emitter
Stabilized

Transistor Biasing
Self Bias
VCC
RB

RC
Vo

Vi

C
C

Collector
Stabilized

Transistor Biasing
Voltage-Divider Bias
The most stable type of circuit biasing.

VCC
RC

RL

Vo

Vi

C
C
R2

RE

Transistor Biasing
Signal Bias
VCC
RC
RB

Vo

C
C

RE

Regions of Transistor Action


LOADLINE

IB

VCC
RL

IB

SATURATION

ACTIVE

IB
IB

Q-POINT

BREAKDOWN

IC

IB
CUT- OFF

VCC

VCE

Regions of Transistor Action


Active region
Base-emitter junction is forward biased and the
collector-base junction is reversed biased.
Transistors active operation as an amplifier.
Saturation region
Both junctions are forward biased.
Switch on operation for the transistor.
Cut off region
Both junctions are reverse biased.
Switch off operation for the transistor.

Loadline and Q-Point


Loadline
- Is a straight line drawn on the collector

curves between the cut-off and saturation


points of the transistor.

Q-point

(Quiescent point )

- Is the operating point of the transistor with

the time varying sources out of the circuit.

Review Question:
Given the circuit below, draw the DC loadline
1K
10K

Ic
25 mA

VCC = 25V
DC Loadline
VBB = 3V

VCE
25 V

Analysis: At cut-off, IC = 0 thus VCE = VCC


At saturation, VCE = 0 thus IC = VCC / RC

BJT Small Signal Analysis


I1

I2
hi
hf I1

V1

hr V2

ho V2

Transistor Hybrid Equivalent Circuit

BJT Small Signal Analysis


H - Parameters
1.

hi short circuit input impedance (V2 = 0)

V1
hi =

(V2 = 0)

I1
2. hr open circuit reverse voltage transfer ratio)

V1
hr =
V2

(I1 = 0)

BJT Small Signal Analysis


H - Parameters
3.

hf short circuit forward current transfer ratio

hf =

I2

(V2 = 0)

I1
4. ho open circuit output admittance

I2
ho =

V2

(I1 = 0)

BJT Small Signal Analysis


Current Gain, Ai

Ai =

I2
I1

Ai =

hf
1 + ho Rl

BJT Small Signal Analysis


Input Impedance, Zi

Zi =

V1
I1

Zi

hi - hr Ai Rl

BJT Small Signal Analysis


Voltage Gain,Vi

Av =

V2
V1

Ai =

- Ai Rl
Zi

BJT Small Signal Analysis


Output Impedance, Zo

Zo =

V2

(short Vs)

I2
Zo =

Rs + hi
h + ho Rs

The re transistor model


The re model employs a diode and
controlled current source to duplicate
the behavior of a transistor in the
region of interest.
Note: BJT transistor amplifiers are
current controlled devices.

Common Base Configuration


Zo = ohms
Zi = re

26mV

26mV
re =

rac =
Id

Ie
Id direct current through
the diode

Common Emitter Configuration

26mV
re =
Ib

Common Collector Configuration

26mV
re =
Ib

2. Field Effect Transistor


Unipolar device which operates as a
voltage controlled device where the
voltage between two of the terminals
(gate and source) controls the current
through the device.
Major feature is very high input
resistance.

Advantages of JFET over BJT

Simpler to fabricate and occupies less space in


integrated form
Extremely high Rin
Less noisy
Exhibits no offset voltage at zero drain current
Relatively immune to radiation
Greater thermal stability

Disadvantages of JFET

Less gain
Smaller power ratings
Switching speed is slower

FET
Source
Drain
Gate

BJT
Emitter
Collector
Base

can be n-channel or p-channel

drain

gate n

source
G

p-channel

gate

n-channel

drain

source
D

S
n-channel

Types of
JFET, its
structure
and
parts

S
p-channel

JFET
Symbol

Operation of JFET
JFET is always operated with the gatesource PN junction reversed biased.
Reverse biasing of the gate source
junction with the negative voltage
produces a depletion region along the PN
junction which extends into the n-channel
and thus increases its resistance by
restricting the channel width as shown in
the preceding figure.

Operation of JFET

gate

VG
S

source

n-channel

drain

VDS
p

Pinch off Region

Vp pinch off voltage

Breakdown Region

Ohmic Region

Operation of JFET

Va avalanche breakdown
voltage

Regions of JFET Action

Ohmic Region linear region

JFET behaves like an ordinary resistor

Pinch Off Region

Saturation or Amplifier Region


JFET operates as a constant current device
because Id is relatively independent of Vds
Idss drain current with gate shorted to
source.

Regions of JFET Action

Breakdown Region

If Vds is increased beyond its value


corresponding to Va avalanche breakdown
voltage.
JFET enters the breakdown region where Id
increases to an excessive value.

Regions of JFET Action

Cut Off Region

As Vgs is made more and more negative, the


gate reverse bias increases which increases
the thickness of the depletion region.
As negative value of Vgs is increased, a stage
comes when the 2 depletion regions touch
each other.
Vgs (off) = -Vp
/Vp/ = /Vgsoff/

PROPER BIASING FOR


JFET
Vds

Vgs

N channel

P Channel

DC Biasing for JFET


1. Fixed Bias
- a separate power source.
VDD +
RL
ID

Vin
RG

VGG -

VGS +

DC Biasing for JFET


2. Self Bias
VDD +
RL
ID

Vin

VGS
RG

+
RS

VS

DC Biasing for JFET


3. Source Bias
VDD +
RL
ID

Vin

VGS +
RG

RS

VSS -

DC Biasing for JFET


4. Voltage Divider

VDD +

R1

RL
ID

Vin

VGS +
R2

VS

RS

Small Signal
JFET Parameters

AC drain resistance, rd

Dynamic drain resistance


The AC resistance between drain and source
terminals when JFET is operating in the pinchoff region.
rd = change in Vds / change in Id
(Vgs remains constant)

Small Signal
JFET Parameters

Transconductance, gm

Forward transconductance
transadmittance
Slope of transfer curve
Similar to gm of Vacuum Tubes

or

gm = change in Id / change in Vgs


(Vds remains constant)

forward

Small Signal
JFET Parameters

Amplification Factor, u
u = change in Vds / change in Vgs
(Id remains constant)
u = gm rd

Small Signal
JFET Parameters

DC drain resistance, Rds

Static or ohmic resistance of the channel


Rds = Vds / Id

Important JFET Formulas

Drain Current (Shockleys Equation)


Id = Idss ( 1 Vgs/Vp) exp 2
Id = Idss ( 1 Vgs/Vgsoff)exp 2
Similarly:
Vgs = Vgsoff (1 (Id/Idss)exp

Important JFET Formulas

When Vgs = 0, gm = gm0


Gm0 = - 2 Idss/Vp
gm = gm0 (1 Vgs/Vp)
gm = gm0 (Id/Idss)exp

Example

For an N-channel JFET


Idss = 8.7 mA
Vp = -3v
Vgs = -1v

Find the values of


Id
Gm0
gm

b. Metal Oxide Semiconductor Field


Effect Transistor (MOSFET)
Second category of the field effect
transistor
Because of the presence of an insulated
gate, then it is sometimes called IGFETs
MOSFETs differs from JFET in that it has
no PN junction structure.
It has two basic types: DE MOSFET and
E - MOSFET

Depletion Enhancement MOSFET


(DE - MOSFET)
Channel has free charge carriers
Current can be produced in the channel
with voltage applied between drain and
source but no gate voltage.
The gate voltage can deplete or enhance
the charge carriers in the channel to a
greater or lesser extent to control the
drain current.

Depletion Enhancement MOSFET


(DE - MOSFET)
The drain and source are diffused into
substrate material and connected by a
narrow channel adjacent to the insulated
gate
It can be operated two in modes, the
depletion mode or the enhancement mode
and
sometimes
called
depletion/enhancement mode MOSFET

Depletion Enhancement MOSFET


(DE - MOSFET)
It can be operated with a zero, positive or
negative gate-source voltage.
Normally operated in the depletion mode.
When configured as switch, it is normallyon.

D
SiO2

D
n-channel

SiO2

p-channel

G
n-substrate

p-substrate
S

S
drain

gate

drain
gate

source

n-channel D-MOSFET

source

p-channel D-MOSFET

Enhancement Only MOSFET


(E - only MOSFET)
The channel has very little doping.
Gate voltage must be applied to enhance the
amount of charge carriers in the channel to
produce drain current.

Enhancement Only MOSFET


(E - only MOSFET)
Operates only in the enhancement mode
Has no depletion mode
It has no structural channel
It has no IDSS parameter
For an n-channel type of this device, a positive
gate voltage above threshold induces a channel
by creating a layer of negative charges (inversion
layer) in the substrate portion that is adjacent to
the SiO2 layer.

Enhancement MOSFET (E - MOSFET)


An n-channel E-MOSFET has a positive VGS while a pchannel E-MOSFET has a negative VGS.
The conductivity of its channel is enhanced by
increasing the gate to source voltage.
For gate voltage below the threshold, there is no
channel to be formed.
If configured as switch, this device is normally off
LD MOSFET, VMOSFET and TMOSFET are EMOSFET technologies developed for higher power
dissipation.

D
D

SiO2 n
p-substrate

n
S

No
permanent
channel

Basic construction

n
+ G
+ n
S

Operation
drain

drain
gate

gate

n-channel

Inversion
layer

source

p-channel

source

Depletion Mode
Negative gate to
source voltage is
applied
n-channel is depleted
of some electrons
hence
decreasing
channel conductivity.

Enhancement
Mode
Positive gate voltage
is applied.
More conduction
electrons are
attracted to the
channel thus
enhancing channel
conductivity.

Enhancement MOSFET (E - MOSFET)


Gate 1

drain

Gate 2
source
N channel
- Either or both gates control the anount
of drain current

PROPER BIASING FOR


MOSFET
E-only

Vds

Vgs

N channel

P Channel

PROPER BIASING FOR


MOSFET
DE

Vds

Vgs

N channel

+/-

P Channel

+/-

II. AMPLIFIERS
Electronic devices capable of amplification or
increasing the amplitude of power, current or
voltage at its output.
Circuits designed to increase the amplitude of
level of an electronic signal.
Used as boosters.

AMPLIFIER
input

output

Classification of Amplifier

1. According to Function
a.Voltage Amplifier
- Voltage controlled source
- Op-amps are voltage amplifier
b. Current Amplifier
- current controlled source
- BJTs are current amplifier
c. Power Amplifier
- Boost the power level of the signal

Classification of Amplifier
2. According to Configuration
a. Common Base Amplifier
- Transistor amplifier where input is
applied at the emitter and output is
taken from the collector terminal.
- The base is common to both input
and output.
- maximum current gain is 1
- No phase inversion from input to
output .

Classification of Amplifier
2. According to Configuration
b. Common Collector Amplifier (emitter
follower)
- Transistor amplifier where input is
applied at the base, output is taken from
the emitter terminal.
- Maximum voltage gain is 1.
- Capacitors must have a negligible
reactance at the frequency of operation.
- No phase inversion from input to output.

Classification of Amplifier
2. According to Configuration
c. Common Emitter Amplifier
- Transistor amplifier wherein the input
is applied at the base and the output
is taken from the collector terminal.
- There is a phase inversion from input
to output.

Classification of Amplifier
3. According to Class of Operation
Efficiency

Class A

Class B

Class C

Class AB

50 %

78.5 %

100 %

Between A &
B

Below
180O

Slightly
greater than
180O

Conduction
Angle

360O

180O

Distortion

Low

High

Bias (Base

Linear
portion

Emitter)

Input

Output

Extreme Moderate

Cut-off

Below
Cut-off

Above
Cut-off

Output

Output

Output

Classification of Amplifier
4. According to Frequency
a. DC Amplifier
- amplifies DC signal.
b. Audio Amplifier
- amplifies signal whose frequency is
within the audio range (20 Hz 20 KHz).
c. RF Amplifier
- amplifies signal whose frequency is
within the radio frequency range.

Classification of Amplifier
4. According to Frequency
d. IF Amplifier
- amplifies signal whose frequency is in
between the carrier and the modulating
frequency.
e.Video Amplifier
- a wide band amplifier that amplifies
video signal.
- video signal refers to the frequency range
of the picture information which arises
from the television scanning process.

Classification of Amplifier

5. According to the signal being amplified


a. Small Signal Amplifiers
- Amplifier that utilizes only the very
linear portion of the
b. Large Signal Amplifiers
- Amplifier that utilizes almmost the full
rated output power

Classification of Amplifier

6. According to method of coupling


a. Direct Coupling
- Amplifiers connected or coupled
without any passive

Classification of Amplifier

6. According to method of coupling


b. Capacitive Coupling
- Amplifiers are connected or coupled
by the used

Classification of Amplifier

6. According to method of coupling


c. Inductive Coupling
- Amplifiers are connected or coupled
by the use of inductor transformer.

Classification of Amplifier

6. According to method of coupling


d.Transformer Coupling
- Most often, inductor is not used as
coupling device instead transformer
is used.

Classification of Amplifier

7. Power Amplifiers
a. Push-Pull Amplifiers
- Amplifier with two similar circuits
operating in phase.
- On amplifies the half of the cycle and
the remaining half is being amplified
by the other amplifier.

Classification of Amplifier

7. Power Amplifiers
a. Push-Pull Amplifiers

Classification of Amplifier

7. Power Amplifiers
a. Push-Pull Amplifiers

Classification of Amplifier

7. Power Amplifiers
b. Complementary-Symmetry Amplifiers
- Push-pull amplifiers using
complementary transistors such as pair
of pnp and npn.

Classification of Amplifier

7. Power Amplifiers
c. Quasi-Complementary Amplifiers
- Push-pull amplifiers using the same
transistors at the output but the driver is
using complementary transistors.

Multistage Amplifiers
a. Cascaded Amplifiers
- each stage as well as the type of inter-stage
coupling used are identical.

Multistage Amplifiers
a. Compound Amplifiers
- each stage may be different from the other
and also different types of inter-stage
couplings may be employed.

Compound Configurations
a. Cascade Connection
- a cascade connection is a series
connection with the output of one stage
then applied as input to the second stage.
- The cascade connection provides a
multiplication of the gain of each stage for a
larger overall gain.

AV = AV1AV2AV3AVn

AV(dB) = 20Log(AV)

Compound Configurations
b. Cascode Connection
- a cascode connection has one transistor on
top of (in series with) another.
- This arrangement is design to provide high
input impedance with low voltage gain to
ensure that the input Miller capacitance is
minimum.

Compound Configurations

c. Darlington Connection
- The main feature of Darlington connection
is that the composite transistor acts as a
single unit with a current gain that is the
product of the current gains of the individual
transistors.
- It is a circuit meant to boost input
resistance.

Compound Configurations

c. Darlington Connection

D = 1 2

Compound Configurations

d. Feedback Pair
- The feedback pair connection is a two
transistor circuit that operates like the
Darlington circuit.
- It uses a pnp transistor driving an npn
transistor.

Review Questions:
1. A PNP transistor is made of
a.
b.
c.
d.

silicon
germanium
carbon
either silicon or germanium

Review Questions:
2. The transistor is usually
encapsulated
a.
b.
c.
d.

graphite powder
enamel paint
epoxy raisin
black plastic

Review Questions:
3. Power transistors are invariably
provided with
a.
b.
c.
d.

solder connections
heat sink
metallic casing
screw bolt

Review Questions:
4.The transistor specification number
2N refers to a
a.
b.
c.
d.

diode
junction transistor
FET with one gate
SCR

Review Questions:
5. Which of the following is necessary
for a transistor action
a. the base region must be very wide
b. the base region must be very narrow
c. the base region must be made from
insulating materials
d. the collector region must be heavily
doped

Review Questions:
6. As compared to a CB amplifier, a CE
amplifier has
a.
b.
c.
d.

low current amplification


higher current amplification
lower input resistance
higher input resistance

Review Questions:
7. It is the most stable type of circuit
biasing
a.
b.
c.
d.

self-bias
signal bias
voltage-divider bias
fixed bias

Review Questions:
8.The quiescent state of a transistor
implies
a.
b.
c.
d.

zero bias
no output
no distortion
no input signal

Review Questions:
9. Each of the two cascaded stages has
a voltage gain of 30. What is the
overall gain?
a. 3
b. 9
c. 30
d. 900
Solution:
GTOTAL = (30) (30) = 900

Review Questions:
10. Which class of amplifiers operates
with the least distortion?
a.
b.
c.
d.

Class A
Class B
Class C
Class D

Review Questions:
11. Which of the following circuit is the
fastest switching device?
a.
b.
c.
d.

JFET
BJT
MOSFET
Triode

Review Questions:
12. Which of the following device is
unipolar?
a.
b.
c.
d.

FET
BJT
Zener diode
LED

Review Questions:
13.The cascaded amplifier which is
often used in the IC is
a.
b.
c.
d.

inductively coupled
capacitively coupled
direct coupled
transformer coupled

Review Questions:
14. Highest operating frequency can
be expected in case of
a.
b.
c.
d.

bipolar transistor
JFET
MOSFET
IGFET

Review Questions:
15. Which of the following is expected
to have the highest input
impedance?
a.
b.
c.
d.

MOSFET
JFET amplifier
CE bipolar transistor
CC bipolar transistor

Review Questions:
16.The ______ is quite popular in
digital circuits especially in CMOS
which require very low power
consumption.
a.
b.
c.
d.

JFET
BJT
D-type MOSFET
E-type MOSFET

Review Questions:
17. What is the amplification factor in
FET transistor amplifiers?
a.
b.
c.
d.

Zi
gm
ID
IG

Review Questions:
18.The E-MOSFET is quite popular in
what type of applications.
a.
b.
c.
d.

digital circuitry
high frequency
buffering
a, b and c

Review Questions:
19. A JFET just operates with
specifically
a. the drain connected to ground
b. gate to source PN junction forward
biased
c. gate connected to the source
d. gate to source PN junction reverse
biased

Review Questions:
20.The main difference of a MOSFET
from a JFET is that
a.
b.
c.
d.

JFET has PN junction


of the power rating
MOSFETs has two gates
MOSFETs do not have physical
channel

Review Questions:
21. A small signal amplifier
a. uses only a small portion of its load
line
b. always has an output signal in the mV
range
c. goes into saturation once on each
input channel
d. is always a common emitter amplifier

Review Questions:
22.The parameter HFE corresponds to
a.
b.
c.
d.

DC
AC
re
rc

Review Questions:
23. If the DC emitter current in a
certain transistor amplifier is 3 mA,
the approximate value of re is
a.
b.
c.
d.

3 K
3
8.33
.33 K

Solution: r = 26 mV = 8.6667
e
3 mA

Review Questions:
24. The input resistance of a common
base amplifier is
a.
b.
c.
d.

very low
very high
the same as CE
The same as CC

Review Questions:
25. Each stage of a four stage amplifier
has a voltage gain of 15.The overall
voltage gain is
a. 60
b. 15
c. 50625
d. 3078
Solution:
VOVERALL = (15) (15) (15) (15) = 50625

Review Questions:
26.The maximum efficiency of a
transformer coupled Class A
amplifier
a.
b.
c.
d.

25
50
78.5
100

Review Questions:
27. In a MOSFET, the process of
creating a channel by the addition
of a charge carrier is called
a.
b.
c.
d.

inducement
improvement
balancing
enhancement

Review Questions:
28. What is the current gain of a
common base circuit called?
a.
b.
c.
d.

gamma
delta
bravo
alpha

Review Questions:
29.The name of the very first
transistor
a.
b.
c.
d.

diode
junction transistor
point contact transistor
triode

Review Questions:
30. Region in a transistor that is
heavily doped
a.
b.
c.
d.

collector
emitter
base
gate

Review Questions:
31. In a common base amplifier the
voltage gain is ______ (April, 2003)
a.
b.
c.
d.

medium
low
zero
high

Review Questions:
32. In a common collector amplifier,
the input resistance is ______ (Nov,
2003)
a.
b.
c.
d.

high
zero
medium
low

Review Questions:
33. A depletion MOSFET (D-MOSFET)
can operate with which of the
following gate-source voltage? (Nov,
2003)
1. zero
2. positive
3. negative
a.
b.
c.
d.

1 only
2 only
3 only
1, 2 and 3

Review Questions:
34. What problem is caused by a
loosely coupled transformer in an
RF amplifier? (April, 2004)
a.
b.
c.
d.

a too-narrow bandpass
over coupling
optimum coupling
a too-wide bandpass

Review Questions:
35. Normally, how are high power
tubes tested? (April, 2004)
a.
b.
c.
d.

visually
individually
in their circuit
use portable testers

Review Questions:
1. Which are the three terminals of a
bipolar transistor?
a.
b.
c.
d.

Cathode, plate and grid


Base, collector and emitter
Input, output and ground
Gate, source and sink

Review Questions:
2. A transistor in which n-type and ptype materials are used is called
a.
b.
c.
d.

Unijunction
TTL
Bipolar
FET

Review Questions:
3. The region in an electronic
transistor that is lightly doped and
very thin is referred to the
a.
b.
c.
d.

Collector-base
Collector
Base
Emitter

Review Questions:
4. In the BJT schematic symbol, the
arrow
a.
b.
c.
d.

Points from p-type to n-type


Points from north to south
Points from n-type to p-type
Points from south to north

Review Questions:
5. _____ is the region in the transistor
that is heavily doped
a.
b.
c.
d.

Collector
Ground
Base
Emitter

Review Questions:
6.The arrow in the symbol of a
transistor indicates the direction of
a.
b.
c.
d.

Electron current in the collector


Donor ion current
Electron current in the emitter
Hole current in the emitter

Review Questions:
7.The base of a transistor serves a
purpose to what element of the
FET?
a.
b.
c.
d.

Source
Ground
Substrate
Gate

Review Questions:
8. ____ is the term used to express the
ratio of change in the DC collector
current to a change in base current
in a bipolar transistor
a.
b.
c.
d.

Gamma
Beta
Alpha
Delta

Review Questions:
9. Solve the collector current if the
base current is 200mA and the
current gain is 20
a.
b.
c.
d.

10 A
4A
1A
40 A

Review Questions:
10. In semiconductor technology, the
characteristic of a transistor in cutoff refers to a condition when
a. The transistor is at its operating point
b. No current flows from emitter to
collector
c. There is no base current
d. Maximum current flows from emitter
to collector

Review Questions:
11.The term fully saturated for a
transistor refers to
a. The collector current at its maximum
value
b. The collector current at its minimum
value
c. The transistor beta at its maximum
value
d. The transistor alpha at its maximum
value

Review Questions:
12.The flow of electrons in an NPN
transistor when used in electronic
circuits is from
a.
b.
c.
d.

Collector to emitter
Collector to base
Emitter to collector
Base to emitter

Review Questions:
13. A transistor acts as _____ when
saturated
a.
b.
c.
d.

Open circuit
Very low resistance
Very high resistance
Variable resistance

Review Questions:
14. For a BJT, the BE junction is
reverse biased and BC forward
biased.The BJT is in what
operating mode?
a.
b.
c.
d.

Forward active
Cut-off
Reverse active
Saturation

Review Questions:
15. At this operating mode, further
increase in base current will not
increase the collector current.
a.
b.
c.
d.

Cut-off
Reverse active
Forward active
Saturation

Review Questions:
16. Line representing all the DC
operating points of the BJT.
a.
b.
c.
d.

DC loadline
Collector curve
AC loadline
Operating line

Review Questions:
17. In order to have the best efficiency
and stability, where on the loadline
should a solid state power amplifier
be operated?
a.
b.
c.
d.

Just below the saturation point


At 1.414 times the saturation point
Just above the saturation point
At the saturation point

Review Questions:
18. What is another name for base
bias?
a.
b.
c.
d.

Fixed bias
Gate bias
Emitter bias
Beta bias

Review Questions:
19. What is the most stable type of
biasing
a.
b.
c.
d.

Current feedback
Fixed bias
Voltage divider
Voltage feedback

Review Questions:
20. Another name for voltage amplifier
a.
b.
c.
d.

Pre-amp
CE
Power amp
CB

Review Questions:
21. Semiconductor which is
considered to be low power of
small signal usually have power
dissipation ratings of
a.
b.
c.
d.

1 watt or less
5 watts or less
Exactly 1 watt
10 watts or less

Review Questions:
22. A big metallic object that helps to
cool transistors and usually
attached to the collector
a.
b.
c.
d.

Leads
Bleeder resistor
Heat sink
Transformer

Review Questions:
23.The h-parameter hf is a
a.
b.
c.
d.

Resistance
Reverse voltage gain
Conductance
Forward current gain

Review Questions:
24. Among the common emitter hparameters, which is the smallest?
a.
b.
c.
d.

hie
hre
hfe
hoe

Review Questions:
25. What is the approximate value of
thermal voltage at room
temperature?
a.
b.
c.
d.

1V
26 mV
0V
18.97 mV

Review Questions:
26. Which of the BJT amplifier
configuration has the highest
power gain?
a.
b.
c.
d.

CE
CC
CB
Emitter follower

Review Questions:
27. Another name for common
collector
a.
b.
c.
d.

Collector follower
Base follower
Emitter follower
Collector divider

Review Questions:
28. Which of the BJT amplifier
configuration can be used as a
buffer?
a.
b.
c.
d.

CB
CS
CC
CE

Review Questions:
29. Which transistor configuration has
the highest input resistance?
a.
b.
c.
d.

Common base
Common emitter
Common collector
Common transistor

Review Questions:
30. Capacitor used to established an
ac ground at a specific point in a
circuit
a.
b.
c.
d.

Electrolytic
Coupling
Bypass
Choke

Review Questions:
31. What do you call an amplifier
which has an output current
flowing during the whole input
current cycle?
a.
b.
c.
d.

Class AB amplifier
Class B amplifier
Class A amplifier
Class C amplifier

Review Questions:
32. An amplifier class in which the
transistor is biased way below cutoff and usually employs a tuned
circuit
a.
b.
c.
d.

A
B
AB
C

Review Questions:
33. An amplifier class in which a
transistor is conducting for half
of the input cycle
a.
b.
c.
d.

A
B
AB
C

Review Questions:
34. Which statement is wrong
regarding a class C amplifier?
a.
b.
c.
d.

Conductor angle less than 180o


Minimal noise
Biased way below cut-off
MAX = 100%

Review Questions:
35. Distortion at the upper end of the
loadline
a.
b.
c.
d.

Cut-off clipping
Upper end noise
Saturation clipping
Compliance clipping

Review Questions:
36. An amplifier with an input
resistance of 600 has an input
current of 500 A. It delivers 100
mA to a 1000 load. Calculate the
dB gain of the amplifier.
a.
b.
c.
d.

48.2 dB
25.2 dB
35.33 dB
50.4 dB

Review Questions:
37. If three amplifiers with a gain of 8
each are in cascade, how much is
the overall gain?
a.
b.
c.
d.

72
24
512
8

Review Questions:
38.The decibel gain in cascaded
amplifiers equal to the
a.
b.
c.
d.

Sum of voltage and current gains


Product of individual gains
Difference of individual gains
Sum of individual gains

Review Questions:
39. Which of the following is a
characteristic of a cascaded
amplifier
a.
b.
c.
d.

Double each amplifiers gain


Each amplifiers gain is increased
Increased overall gain
Total gain is decreased

Review Questions:
40. ____ is a unipolar semiconductor
device which the current is carried
by the majority carriers only
a.
b.
c.
d.

Field-effect transistor
Point-contact transistor
Zener diode
Junction transistor

Review Questions:
41. Portion of an FET which serves as
the path for current
a.
b.
c.
d.

Drain
Gate
Source
Channel

Review Questions:
42. An FET can act as an excellent buffer
amplifier because
a. It has a low input impedance and a high
output impedance
b. It has a high input impedance and a low
output impedance
c. It has a very high voltage gain and a low
noise level
d. Smaller size, longer life and lower
efficiency

Review Questions:
43. What FET terminal corresponds to
Base of BJT?
a.
b.
c.
d.

Drain
Source
Gate
Anode

Review Questions:
44.The maximum value of ID for JFET
a.
b.
c.
d.

10 mA
IMAX
100 A
IDSS

Review Questions:
45. Minimum VDS at which ID becomes
constant when VGS is zero
a.
b.
c.
d.

Cut-off
Saturation
Pinch-off
Turn-on voltage

Review Questions:
46. A mode of operation for depletion
type MOSFET to increase the size
of the channel
a.
b.
c.
d.

On mode
Depletion mode
Positive mode
Enhancement mode

Review Question:
1. The two types of bipolar transistor
are:
a.
b.
c.
d.

PN and NP
PNP and NPN
PPN and NNP
N and P

Review Question:
2. The three terminals of a bipolar
junction transistor are called
a.
b.
c.
d.

p, n, p
n, p, n
Input, output and ground
Base, emitter and collector

Review Question:
3. The largest region of a bipolar
transistor is the
a.
b.
c.
d.

Base
Emitter
Collector
N-region

Review Question:
4.The emitter of the transistor is
generally doped the heaviest
because it
a.
b.
c.
d.

Has to dissipate maximum power


Has to supply the charge carriers
Is the first region of the transistor
Must posses low resistance

Review Question:
5. In a PNP transistor, the p-regions
are
a.
b.
c.
d.

Base and emitter


Base and collector
Emitter and collector
None of these

Review Question:
6. During normal operation, the
highest percentage of electrons
leaves a NPN transistor from
which region?
a.
b.
c.
d.

Base
Emitter
Collector
N-region

Review Question:
7. For operation as an amplifier, the
base of an NPN transistor must be
a.
b.
c.
d.

Positive with respect to the emitter


Negative with respect to the emitter
Positive with respect to the collector
0V

Review Question:
8. A bipolar transistors majority
current carriers are:
a. Electrons
b. Holes
c. Dependent upon the type of
transistor
d. Always both electrons and holes

Review Question:
9. In which region is a bipolar
transistor normally operated
a.
b.
c.
d.

Saturation
Cut-off
Linear
Beta

Review Question:
10. A transistor has a common base
forward circuit gain hFE=0.98 the
DC forward current gain hFE is
a.
b.
c.
d.

49
50
98
Not determinable from the data
given

Review Question:
11. A CC amplifier has the highest
a.
b.
c.
d.

Voltage gain
Current gain
Power gain
Output impedance

Review Question:
12. When the transistor is fully
switched on, it is to be
a.
b.
c.
d.

Shorted
Open
Saturated
Cut-off

Review Question:
13. In which operating region should
normal figures calculated
a.
b.
c.
d.

Saturation
Breakdown
Cut-off
Active

Review Question:
14. Which transistor circuit
arrangement produces the highest
power gain?
a.
b.
c.
d.

Common base
Common collector
Common emitter
A transistors power gain is the same
in any circuit

Review Question:
15.The DC loadline of a transistor
circuit
a. Has a negative slope
b. Is a curved line
c. Gives graphic relation between IC and
IB
d. Does not contain the Q-point

Review Question:
16. For an amplifying transistor, if the
input signals current is 10 A peak
to peak, and the output signal
current is 1 mA peak to peak and
the voltage gain is 75, what is the
current gain?
a.
b.
c.
d.

10
75
100
250

Review Question:
17.The DC of a transistor is its
a.
b.
c.
d.

Current gain
Voltage gain
Power gain
Internal resistance

Review Question:
18. If in a bipolar junction transistor, Ib
= 100 A and Ic = 10 mA, what is
the value of its beta?
a.
b.
c.
d.

0.1
10
100
None of these

Review Question:
19. If Ic is 50 times larger than Ib then
DC is
a.
b.
c.
d.

0.02
100
50
500

Review Question:
20. If DC is 100, the value of dc is
a.
b.
c.
d.

99
0.99
101
0.01

Review Question:
21.The approximate voltage across
the forward-biased base-emitter
junction of a silicon BJT is
a.
b.
c.
d.

0V
0.7 V
0.3 V
Vbb

Review Question:
22. If the output of a transistor
amplifier is 5 Vrms and the input is
100 Vrms, the voltage gain is
a.
b.
c.
d.

5
500
50
100

Review Question:
23. When operated in cut-off and
saturation, the transistor acts like
a.
b.
c.
d.

Linear amplifier
A switch
A variable capacitor
A variable resistor

Review Question:
24. The maximum overall efficiency of
a class B push-pull amplifier cannot
exceed _____ percent
a.
b.
c.
d.

100
78.5
50
85

Review Question:
25.The main use of a class C
amplifiers is
a. As an RF amplifier
b. As stereo amplifier
c. In communication sound
equipment
d. As distortion generator

Review Question:
26.The JFET is
a.
b.
c.
d.

A unipolar device
A voltage-controlled device
A current controlled device
Answers A and B

Review Question:
27. A JFETs PN junction is between
the
a.
b.
c.
d.

Source and drain


Source and channel
Drain and channel
Gate and channel

Review Question:
28.The channel of a JFET is between
the
a.
b.
c.
d.

Gate and drain


Drain and source
Gate and source
Input and output

Review Question:
29. After Vds reaches the pinch-off
value Vp in a JFET, drain current Id
becomes
a.
b.
c.
d.

Zero
Low
Saturated
Reversed

Review Question:
30. In a JFET, drain current is
maximum when Vgs is
a.
b.
c.
d.

Zero
Negative
Positive
Equal to Vp

Review Question:
31. At cut-off, the JFET channel is
a. At its widest point
b. Completely closed by the depletion
region
c. Extremely narrow
d. Reversed biased

Review Question:
32. A JFET can be cut-off with the help
of
a.
b.
c.
d.

Vgs
Vds
Vdg
Vdd

Review Question:
33.The unit of measurement for
transconductance is
a.
b.
c.
d.

Ohm
Mho
Siemens
B or C

Review Question:
34. A D-MOSFET differs from a JFET
in the sense that it has no
a.
b.
c.
d.

Channel
Gate
PN junctions
Substrate

Review Question:
35. In an enhancement MOSFET, the
gate channel form a
a.
b.
c.
d.

PN junction
Capacitor
Dielectric
Resistor

Review Question:
36. A MOSFET differs from a JFET
mainly because
a.
b.
c.
d.

Of the power rating


The MOSFET has two gates
The JFET has a PN junction
MOSFET do not have a physical
channel

Review Question:
37.The main factor which
differentiates a D-MOSFET from
an E-MOSFET is the absence of
a.
b.
c.
d.

Insulated gate
Electrons
Channel
PN junctions

Review Question:
38. In an N-channel enhancement
MOSFET, an increase in negative
voltage at the gate causes drain
current to:
a.
b.
c.
d.

Increase
Decrease
Remain constant
None of the above

Review Question:
39.The polarity of Vgs for E only
MOSFET is
a.
b.
c.
d.

Positive
Negative
Zero
Depends on P or N channel

Review Question:
40. Which circuit produces a voltage
gain that is always less than unity?
a.
b.
c.
d.

Common-drain
Common-gate
Common-source
All of the above

Review Question:
41. Which amplifier circuit has the
lowest input impedance?
a.
b.
c.
d.

Common-drain
Common-gate
Common-source
Source-follower

Review Question:
42. Which JFET transconductance
value will produce the highest
voltage gain in a given circuit?
a.
b.
c.
d.

15000 microsiemens
5000 microsiemens
3000 microsiemens
2000 microsiemens

Review Question:
43. Which type of JFET amplifier
circuit is the most widely used?
a.
b.
c.
d.

Common-drain
Common-gate
Common-source
Source-follower

Review Question:
44. In a common source amplifier, the
output voltage is
a.
b.
c.
d.

90O out of phase with the input


In the phase with the input
Taken at the source
180O out of phase with the input

Review Question:
45. In a certain common-source (CS)
amplifier,Vds = 3.2 Vrms and Vgs =
280 Vrms.The voltage gain is
a.
b.
c.
d.

1
11.4
8.75
3.2

Review Question:
46. Which of the following circuits
generally has the greatest gain?
a.
b.
c.
d.

Common-source
Common-gate
Common-drain
None of the above

Review Question:
47.The input impedance of a MOSFET
a.
b.
c.
d.

Is zero
Is normally low
Is normally very high
Is too high for the use as a low-level
amplifier

Review Question:
48. A Gunn diode is noted for its ability
to
a.
b.
c.
d.

Oscillate at microwave frequencies


Rectify AC
Detect at low frequency
Amplify at DC

Review Question:
49. In an enhancement-mode
MOSFET
a.
b.
c.
d.

The gate bias creates the channel


The drain must be grounded
The gate must be grounded
The source must be grounded

Review Question:
50.The input impedance of a MOSFET
a. Is lower than that of a MOSFET
b. Is lower than that of a bipolar
transistor
c. Is between that of a bipolar transistor
and JFET
d. Is extremely high

Review Question:
1. In a PNP transistor, the p-regions
are
a.
b.
c.
d.

Base and emitter


Base and collector
Emitter and collector
Wala lang

Review Question:
2. The bias condition for a transistor
to be used as a linear amplifier is
called
a.
b.
c.
d.

Forward-reverse
Forward-forward
Reverse-reverse
Collector-bias

Review Question:
3. In cut-off,VCE is
a.
b.
c.
d.

0V
Minimum
Maximum
Equal to VCC

Review Question:
4. In saturation VCE is
a.
b.
c.
d.

0.7 V
Equal to VCC
Minimum
Maximum

Review Question:
5. To saturate a BJT
a.
b.
c.
d.

IB = IC
IB > IC(SAT) / DC
VCC must be at least 10 V
The emitter must be grounded

Review Question:
6. Once in saturation, a further
increase in base current will
a. Cause the collector current to
increase
b. Not affect the collector current
c. Cause the collector current to
decrease
d. Turn the transistor off

Review Question:
7. If the base-emitter junction is open,
the collector voltage is
a.
b.
c.
d.

VCC
0V
Floating
0.2 V

Review Question:
8. The maximum value of collector
current in a biased transistor is
a.
b.
c.
d.

BDCIB
IC(SAT)
Greater than IE
IE - I B

Review Question:
9. Ideally, a dc loadline is a straight line
drawn on the collector
characteristic curves between
a.
b.
c.
d.

The Q-point and cut-off


The Q-point and saturation
VCE(CUT-OFF)
IB = 0 and IB = IC / DC

Review Question:
10. If a sinusoidal voltage is applied to
the base of a biased npn transistor
and the resulting sinusoidal collector
voltage is clipped near zero volts, the
transistor is
a.
b.
c.
d.

Being driven into saturation


Being driven into cutoff
Operating nonlinearly
Answers A and C

Review Question:
11. The disadvantage of a base bias is
that
a.
b.
c.
d.

It is very complex
It produces voltage gain
It is too beta dependent
It produces high leakage current

Review Question:
12. Emitter bias is
a.
b.
c.
d.

Essentially independent of DC
Very dependent on DC
Provides a stable bias point
Answers A and C

Review Question:
13. The input resistance at the base of
a biased transistor depends mainly
on
a.
b.
c.
d.

DC
RB
RE
DC and RE

Review Question:
14. In a voltage-divider biased
transistor circuit, RIN(BASE) can
generally be neglected in
calculations when
a.
b.
c.
d.

RIN(BASE) > R2
R2 > 10RIN(BASE)
RIN(BASE) > 10R2
R1 << R2

Review Question:
15. In a certain voltage-divider biased
npn transistor,VB is 2.95 V.The dc
emitter voltage is approximately
a.
b.
c.
d.

2.25 V
2.95 V
3.65 V
0.7 V

Review Question:
16. voltage-divider bias
a.
b.
c.
d.

Cannot be independent of DC
Can be essentially independent of DC
Is not widely used
Requires fewer components than all
the other methods

Review Question:
17. In a voltage-divider biased npn
transistor, if the upper voltagedivider resistor (the one connected
to VCC) opens,
a.
b.
c.
d.

The transistor goes into cut-off


The transistor goes into saturation
The transistor burns out
The supply voltage is too high

Review Question:
18. A small signal amplifier
a. Uses only a small portion of its
loadline
b. Always has an output signal in the mV
range
c. Goes into saturation once on each
input cycle
d. Is always a common-emitter amplifier

Review Question:
19. If the DC emitter current in a
certain transistor amplifier is 3
mA, the approximate value of re is
a.
b.
c.
d.

3 K
3
8.33
0.33

Review Question:
20. For a common-collector amplifier,
Re = 100 , and ac = 150.The AC
input resistance at the base is
a.
b.
c.
d.

1500
15 K
110
16.5 K

Review Question:
21. For a common-emitter amplifier,
Rc = 1 K, RE = 390 , re = 15 ,
and ac = 75. Assuming that Re is
completely bypassed at the
operating frequency, the voltage
gain is
a.
b.
c.
d.

66.7
2.56
2.47
75

Review Question:
22. In the circuit of question no. 21, if
the frequency is reduced to the
point where XC(BYPASS) = RE, the
voltage gain is
a.
b.
c.
d.

Remains the same


Is less
Is greater
Indeterminate

Review Question:
23. In a darlington pair configuration,
each transistor has an ac beta of
125. If RE is 560 , the input
resistance is
a.
b.
c.
d.

560
70 K
8.75 M
140 K

Review Question:
24. The input resistance of a common
base amplifier is
a.
b.
c.
d.

Very low
Very high
The same as CE
The same as CC

Review Question:
25. In a common-emitter amplifier
with voltage-divider bias, RIN(BASE) =
68 K, R1 = 33 K and R2 = 15 k.
The total input resistance is
a.
b.
c.
d.

68 K
8.95 K
22.2 K
12.3 K

Review Question:
26. A CE amplifier is driving a 10 K
load. If Rc = 2.2 K and re = 10 ,
the voltage gain is approximately
a.
b.
c.
d.

220
1000
10
180

Review Question:
27. Each stage of a four stage amplifier
has a voltage gain 15. the overall
voltage gain is
a.
b.
c.
d.

60
15
50,625
3078

Review Question:
28. The overall gain found in question
27 can be expressed in decibels as
a.
b.
c.
d.

94.1 dB
47 dB
35.6 dB
69.8 dB

Review Question:
29. The overall gain of an amplifier in
cascade is
a.
b.
c.
d.

The sum
The average
The product
100% of the sum

Review Question:
30. The decibel gain in cascaded
amplifiers equal the
a. Sum of the voltage and the current
gains
b. Product of the individual gains
c. Difference of the individual gains
d. Sum of the individual gains

Review Question:
31. A transistor in which n-type and ptype materials are used is called
a.
b.
c.
d.

Unijunction
Bipolar
TTL
FET

Review Question:
32. In the PNP transistor ____ are the
majority carriers
a.
b.
c.
d.

Electrons
Holes
Donor atoms
Acceptor atoms

Review Question:
33. Biasing represents ____ condition
a.
b.
c.
d.

AC
DC
AC and DC
Neither AC nor DC

Review Question:
34. The following relationships
between alpha and beta are true
except
a.
b.
c.
d.

Beta = alpha/ (1- alpha)


Alpha = beta/ (beta - 1)
Alpha = beta/ (beta + 1)
(1- alpha) = 1/ (1 + beta)

Review Question:
35. In the darlington pair
configuration, each transistor has a
beta of 100. What is the effective b
of the pair?
a.
b.
c.
d.

1000
100
10,000
1

Review Question:
36. In a certain emitter feedback bias
circuit, the base resistance is 100
K and the beta of the transistor is
99. What is the resistance seen by
the emitter circuit looking to the
base?
a.
b.
c.
d.

99
10 K
1 K
99 K

Review Question:
37. The circuit that provides the best
stabilization of operating point is
a.
b.
c.
d.

Base bias
Collector feedback bias
Voltage divider bias
Emitter feedback bias

Review Question:
38. A small signal amplifier
a. Uses only a small portion of its
loadline
b. Always has an output signal in the mV
range
c. Goes into saturation once on its input
cycle
d. Is always common emitter amplifier

Review Question:
39. Equivalent circuit model
commonly used in small signal
analysis at high frequencies
a.
b.
c.
d.

Ebers-Moll
Ideal model
Hybrid-Pi or Giacoletto
H parameters

Review Question:
40. The smallest of the four hparameters of the transistor is
a.
b.
c.
d.

Hr and Ho
Hi and Ho
Hr and Hf
Hi and Hf

Review Question:
41. The main consideration in the
output stage of an amplifier is the
a.
b.
c.
d.

Power output
Power gain
Voltage gain
Fidelity

Review Question:
42. _____ amplifiers are usually placed
at the input stages
a.
b.
c.
d.

Voltage
Resistance
Current
Power

Review Question:
43. The output stage in an amplifier is
also called
a.
b.
c.
d.

Mixer stage
Power stage
Detector stage
RF stage

Review Question:
44. Semiconductor which is
considered to be low power or
small signal usually have power
dissipation ratings of
a.
b.
c.
d.

1 watt or less
5 watts or less
Exactly 1 watt
10 watts or less

Review Question:
45. Which transistor configuration has
the highest input resistance?
a.
b.
c.
d.

Common base
Common emitter
Common collector
Common transistor

Review Question:
46. In CC amplifier, voltage gain
a.
b.
c.
d.

Cannot exceed unity


Depends on the output impedance
Is dependent on the input signal
Is always constant

Review Question:
47. Which of the following
configurations can be used as
buffer?
a.
b.
c.
d.

CE
CB
CC
CG

Review Question:
48. Which of the following
combinations has no phase
inversion of the signal?
a.
b.
c.
d.

CB and CE
Two CEs
CC and CE
Any of these

Review Question:
49. The collector current flows for
____ in a class A amplifier
a.
b.
c.
d.

Less than the whole cycle


Half cycle
Less than the half cycle
The entire cycle

Review Question:
50. A class A circuit would not work
well as
a.
b.
c.
d.

A stereo hi-fi amplifier


A TV transmitter PA
A low level microphone preamplifier
The first stage in a radio receiver

Review Question:
51. The Q point will be located at ____
if the base resistor is open
a.
b.
c.
d.

The lower end of the loadline


The upper end of the loadline
The middle of the loadline
The loadline

Review Question:
52. The transistor in class B amplifier
is biased at
a.
b.
c.
d.

Cut-off
Reverse
Saturation
Midpoint of the loadline

Review Question:
53. Crossover distortion is a problem
of what amplifier class?
a.
b.
c.
d.

A
B
C
AB

Review Question:
54. The maximum efficiency of a
resistance loaded class A amplifier
is
a.
b.
c.
d.

50%
30%
25%
78.5%

Review Question:
55. The maximum efficiency of a
transformer coupled class A
amplifier is
a.
b.
c.
d.

78.5%
100%
25%
50%

Review Question:
56. A transistor amplifier with 85%
efficiency is likely to be class
a.
b.
c.
d.

A
B
C
AB

Review Question:
57. Which is the characteristic of AC
loadline?
a. It always saturated
b. It is usually of less slope than that of
the DC loadline
c. It always cut-off
d. It is usually steeper than DC loadline

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