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The MJE13009 is designed for highvoltage, highspeed power switching inductive
circuits where fall time is critical. They are particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
100 WATTS
v
CASE 221A06
TO220AB
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO(sus)
400
Vdc
CollectorEmitter Voltage
VCEV
700
Vdc
VEBO
Vdc
IC
ICM
12
24
Adc
IB
IBM
6
12
Adc
IE
IEM
18
36
Adc
PD
2
16
Watts
mW/_C
PD
100
800
Watts
mW/_C
TJ, Tstg
65 to + 150
_C
Symbol
Max
Unit
RJA
62.5
_C/W
RJC
1.25
_C/W
TL
275
_C
THERMAL CHARACTERISTICS
Characteristic
10%.
Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves representing boundaries on device characteristics are given to facilitate worst case design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designers and SWITCHMODE are trademarks of Motorola, Inc.
REV 2
3676
Motorola, Inc. 1995
MJE13009
Symbol
Min
Typ
Max
Unit
VCEO(sus)
400
Vdc
1
5
*OFF CHARACTERISTICS
ICEV
IEBO
mAdc
mAdc
SECOND BREAKDOWN
IS/b
See Figure 1
See Figure 2
*ON CHARACTERISTICS
DC Current Gain
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
hFE
8
6
40
30
1
1.5
3
2
1.2
1.6
1.5
fT
MHz
Cob
180
pF
td
0.06
0.1
tr
0.45
ts
1.3
tf
0.2
0.7
tsv
0.92
2.3
tc
0.12
0.7
VCE(sat)
VBE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
3677
MJE13009
14
10 s
20
10
5
12
100 s
100
50
1 ms
2
1
0.5
TC = 25C
dc
THERMAL LIMIT
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.2
0.1
0.05
10
TC 100C
IB1 = 2.5 A
8
6
VBE(off) = 9 V
5V
0.02
0.01
3V
0
5
20 30
200 300
10
50 70 100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
500
100
200
300
400
1.5 V
500
700
600
800
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
1
SECOND BREAKDOWN
DERATING
0.8
0.6
THERMAL
DERATING
0.4
0.2
20
60
40
80
100
120
140
160
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
0.1
P(pk)
0.05
0.2
0.5
10
20
t1
t2
100
200
500
t, TIME (ms)
3678
1.0 k
50
30
TJ = 150C
25C
20
55C
10
7
5
0.2
VCE = 5 V
0.3
3
0.5 0.7 1
5
7
2
IC, COLLECTOR CURRENT (AMP)
10
20
MJE13009
2
1.6
5A
8A
12 A
0.8
0.4
TJ = 25C
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1
IB, BASE CURRENT (AMP)
0.7
1.4
0.6
IC/IB = 3
V, VOLTAGE (VOLTS)
IC/IB = 3
1.2
V, VOLTAGE (VOLTS)
3A
IC = 1 A
1.2
TJ = 55C
1
0.8
25C
150C
TJ = 150C
0.5
0.4
0.3
55C
0.2
25C
0.6
0.1
0.4
0.2 0.3
0.5 0.7
10
0
0.2 0.3
20
10
20
10K
4K
VCE = 250 V
2K
Cib
1K
C, CAPACITANCE (pF)
0.5 0.7
TJ = 150C
100
125C
100C
10
75C
50C
1
25C
0.1
0.4
REVERSE
FORWARD
+ 0.2
+ 0.4
0
0.2
VBE, BASEEMITTER VOLTAGE (VOLTS)
+ 0.6
TJ = 25C
1K
800
600
400
200
100
80
60
40
0.1
Cob
100
0.2 0.5 1 2 5 10 20 50
VR, REVERSE VOLTAGE (VOLTS)
200
500
3679
MJE13009
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
VCC
33
+125 V
MJE210
TEST CIRCUITS
0.001 F
33 1N4933
RC
5V
2N2222
PW
1k
MR826*
IC
RB
68
1k
+5 V
5.1 k
IB
TUT
Vclamp
*SELECTED FOR 1 kV
D1
VCE
51
1N4933
1k
D.U.T.
4.0 V
2N2905
0.02 F 270
CIRCUIT
VALUES
NOTE
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
TEST WAVEFORMS
SCOPE
RB
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
IC
ICM
t1
VCE
47 100
1/2 W
VBE(off)
OUTPUT WAVEFORMS
tf CLAMPED
tf UNCLAMPED t2
t1 ADJUSTED TO
OBTAIN IC
t
L (I )
tf
t1 coil CM
VCC
VCEM
TIME
MJE200
Vclamp
t2
t2
Lcoil (ICM)
Vclamp
VCC = 125 V
RC = 15
D1 = 1N5820 or Equiv.
RB =
VCC = 20 V
Vclamp = 300 Vdc
25 s
+10 V
Test Equipment
ScopeTektronics
475 or Equivalent
8 V
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
100_C. Increasing the reverse bias will give some improvement in device blocking capability.
The sustaining or active region voltage requirements in
switching applications occur during turnon and turnoff. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turnon
and the pulsed forward bias SOA curves (Figure 1) are the
proper design limits.
For inductive loads, high voltage and current must be sustained simultaneously during turnoff, in most cases, with the
base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or
below a specific value of collector current. This can be accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these devices is specified as a Reverse Bias Safe Operating Area
(Figure 2) which represents voltagecurrent conditions that
can be sustained during reverse biased turnoff. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
(1) For detailed information on specific switching applications, see
Motorola Application Notes AN719, AN767.
MJE13009
VOLTAGE REQUIREMENTS (continued)
In the four application examples (Table 2) load lines are
shown in relation to the pulsed forward and reverse biased
SOA curves.
In circuits A and D, inductive reactance is clamped by the
diodes shown. In circuits B and C the voltage is clamped by
the output rectifiers, however, the voltage induced in the primary leakage inductance is not clamped by these diodes and
could be large enough to destroy the device. A snubber network or an additional clamp may be required to keep the
turnoff load line within the Reverse Bias SOA curve.
Load lines that fall within the pulsed forward biased SOA
curve during turnon and within the reverse bias SOA curve
during turnoff are considered safe, with the following assumptions:
(1) The device thermal limitations are not exceeded.
(2) The turnon time does not exceed 10 s (see standard
pulsed forward SOA curves in Figure 1).
(3) The base drive conditions are within the specified limits
shown on the Reverse Bias SOA curve (Figure 2).
CURRENT REQUIREMENTS
An efficient switching transistor must operate at the required current level with good fall time, high energy handling
2K
ts
VCC = 125 V
IC/IB = 5
TJ = 25C
700
500
1K
200
t, TIME (ns)
tr
VCC = 125 V
IC/IB = 5
TJ = 25C
500
300
200
100
td @ VBE(off) = 5 V
70
tf
50
0.2 0.3
2
3
5
7
0.5 0.7 1
IC, COLLECTOR CURRENT (AMP)
10
20
100
90% IB1
tfi
10%
VCEM
10
20
IC
Vclamp
VCE
tti
tc
Vclamp
IB
90% IC
trv
0.5 0.7 1
2
5
7
IC, COLLECTOR CURRENT (AMP)
10%
ICM
2%
IC
CURRENT 2 A/DIV
tsv
0.3
IC
90% VCEM
0.2
VOLTAGE 50 V/DIV
t, TIME (ns)
700
300
IC
VCE
TIME
TIME 20 ns/DIV
MJE13009
Table 2. Applications Examples of Switching Circuits
CIRCUIT
SERIES SWITCHING
REGULATOR
Collector Current
A
VCC
24 A
VO
TC = 100C
VO
N
VCC
1
t
TIME
TIME
VCE
TURNOFF
24 A
Collector Current
VCC
IC
350 V
12 A
TURNON
VCC 400 V 1
700 V
COLLECTOR VOLTAGE
RINGING CHOKE
INVERTER
TIME DIAGRAMS
400 V
700 V
IC
toff
ton
VCE
VCC+
N(Vo)
t
LEAKAGE SPIKE
VCC
VCC + N(Vo)
COLLECTOR VOLTAGE
PUSHPULL
INVERTER/CONVERTER
VO
C
VCC
Collector Current
24 A
TURNOFF
IC
ton
t
VCE
2 VCC
VCC
2 VCC
VCC
400 V
toff
700 V
COLLECTOR VOLTAGE
SOLENOID DRIVER
VCC
SOLENOID
Collector Current
24 A
PD = 4000 W 2
350 V
TURNOFF (REVERSE BIAS) SOA
TURNOFF 1.5 V VBE(off) 9.0 V
TURNOFF DUTY CYCLE 10%
TURNOFF
TC = 100C
12 A
ton
toff
t
VCE
VCC
TURNON
VCC 400 V 1
700 V
COLLECTOR VOLTAGE
3682
IC
MJE13009
IC
AMP
TC
_C
tsv
ns
trv
ns
tfi
ns
tti
ns
tc
ns
25
100
770
1000
100
230
150
160
200
200
240
320
25
100
630
820
72
100
26
55
10
30
100
180
25
100
720
920
55
70
27
50
2
8
77
120
12
25
100
640
800
20
32
17
24
2
4
41
54
3683
MJE13009
PACKAGE DIMENSIONS
T
B
SEATING
PLANE
F
T
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
Q
1 2 3
H
K
Z
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A06
TO220AB
ISSUE Y
3684
MJE13009
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298
*MJE13009/D*
3685
MJE13009/D