SUP/SUB85N10-10

New Product

Vishay Siliconix

N-Channel 100-V (D-S) 175C MOSFET


  
V(BR)DSS (V)

rDS(on) (
)

ID (A)

0.0105 @ VGS = 10 V

100

85 a

0.012 @ VGS = 4.5 V

TO-220AB

TO-263

G
DRAIN connected to TAB
G

D S

Top View

G D S

SUB85N10-10

Top View
SUP85N10-10

N-Channel MOSFET

         


Parameter

Symbol

Limit

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

20

TC = 25C

Continuous Drain Current (TJ = 175C)

175 C)

TC = 125C

Pulsed Drain Current

IDM

Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb

ID

L = 0.1 mH
TC = 25C (TO-220AB and TO-263)
TA = 25C (TO-263)d

Operating Junction and Storage Temperature Range

85a
60a

240

IAR

75

EAR

280

PD

Unit

250c
3.75

mJ
W

TJ, Tstg

55 to 175

C

Symbol

Limit

Unit

    

Parameter
PCB Mount (TO-263)d
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case

40
RthJA
RthJC

62.5

C/W

0.6

Notes
a. Package limited.
b. Duty cycle  1%.
c. See SOA curve for voltage derating.
d. When mounted on 1 square PCB (FR-4 material).
Document Number: 71141
S-00172Rev. A, 14-Feb-00

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SUP/SUB85N10-10
New Product

Vishay Siliconix


      
 
 


Parameter

Symbol

Test Condition

Min

Typ

Max

V(BR)DSS

VDS = 0 V, ID = 250 mA

100

VGS(th)

VDS = VGS, ID = 250 mA

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 80 V, VGS = 0 V

Unit

Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage

Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C

On-State Drain Currenta

a
D i S
O S
R i
Drain-Source
On-State
Resistance

IDSS

ID(on)

rDS(on)

V
3

VDS = 80 V, VGS = 0 V, TJ = 125C

50

VDS = 80 V, VGS = 0 V, TJ = 175C

250

VDS w 5 V, VGS = 10 V

120
0.0085

0.0105

VGS = 4.5 V, ID = 20 A

0.0010

0.012

VDS = 15 V, ID = 30 A

0.017

VGS = 10 V, ID = 30 A, TJ = 175C
gfs

mA
A

VGS = 10 V, ID = 30 A

VGS = 10 V, ID = 30 A, TJ = 125C

Forward Transconductancea

nA

0.022
25

Dynamicb
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Chargec

Qg

Gate-Source Chargec

Qgs

6550
VGS = 0 V, VDS = 25 V, f = 1 MHz

pF
F

665
265
105

VDS = 50 V,
V VGS = 10 V
V, ID = 85 A

160
nC
C

17

Gate-Drain Chargec

Qgd

23

Turn-On Delay Timec

td(on)

12

25

tr

90

135

55

85

130

195

Rise Timec
Turn-Off Delay Timec
Fall Timec

td(off)

VDD = 50 V
V,, RL = 0
0.6
6W
ID ^ 85 A,
A VGEN = 10 V
V, RG = 2
2.5
5W

tf

ns

Source-Drain Diode Ratings and Characteristics (TC = 25C)b

Continuous Current

IS

85

Pulsed Current

ISM

240

Forward Voltagea

VSD

Reverse Recovery Time

Peak Reverse Recovery Current
Reverse Recovery Charge

IF = 85 A, VGS = 0 V

1.0

1.5

85

140

ns

IF = 50 A
A, di/d
di/dt = 100 A/
A/ms

4.5

0.17

0.35

mC

trr
IRM(REC)
Qrr

Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.

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Document Number: 71141

S-00172Rev. A, 14-Feb-00

SUP/SUB85N10-10
New Product

Vishay Siliconix

 
       
Output Characteristics

Transfer Characteristics
200

250
VGS = 10 thru 6 V
5V
I D Drain Current (A)

I D Drain Current (A)

200

150

100

4V

50

150

100

TC = 125C

50

25C
55C

3V
0

0
0

10

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

Transconductance

On-Resistance vs. Drain Current

0.020

250
TC = 55C
r DS(on) On-Resistance (
)

g fs Transconductance (S)

200
25C
150
125C
100

50

0.015

VGS = 4.5 V
VGS = 10 V

0.010

0.005

0
0

20

40

60

80

100

20

40

ID Drain Current (A)

80

100

120

ID Drain Current (A)

Capacitance

Gate Charge
20

V GS Gate-to-Source Voltage (V)

10000

8000
C Capacitance (pF)

60

Ciss
6000

4000

2000

Crss

Coss

VDS = 50 V
ID = 85 A

16

12

0
0

15

30

45

60

VDS Drain-to-Source Voltage (V)

Document Number: 71141
S-00172Rev. A, 14-Feb-00

75

50

100

150

200

Qg Total Gate Charge (nC)

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SUP/SUB85N10-10
New Product

Vishay Siliconix

 
       
On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

2.5

100

2.0
I S Source Current (A)

r DS(on) On-Resistance (W)

(Normalized)

VGS = 10 V
ID = 30 A

1.5

1.0

TJ = 150C

0.5

0
50

1
25

25

50

75

100

125

150

175

0.3

TJ Junction Temperature (C)

1.2

140

130
V(BR)DSS (V)

100
IAV (A) @ TA = 25C
I Dav (a)

0.9

Drain Source Breakdown vs.

Junction Temperature

1000

10
IAV (A) @ TA = 150C

ID = 250 mA

120

110

100

0.1
0.00001

0.6

VSD Source-to-Drain Voltage (V)

Avalanche Current vs. Time

0.0001

0.001

0.01

tin (Sec)

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TJ = 25C

10

0.1

90
50

25

25

50

75

100

125

150

175

TJ Junction Temperature (C)

Document Number: 71141

S-00172Rev. A, 14-Feb-00

SUP/SUB85N10-10
New Product

Vishay Siliconix



 
Maximum Avalanche and Drain Current
vs. Case Temperature

Safe Operating Area

1000

100

10 ms

80
I D Drain Current (A)

I D Drain Current (A)

100
60

40

100 ms
10

1 ms
10 ms
100 ms
dc

20

Limited
by rDS(on)

TC = 25C
Single Pulse

0.1
0

25

50

75

100

125

150

175

0.1

10

1000

100

VDS Drain-to-Source Voltage (V)

TC Ambient Temperature (C)

Normalized Thermal Transient Impedance, Junction-to-Case

2

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2
0.1
0.1
0.05
0.02
Single Pulse

0.01
104

103

102

101

10

Square Wave Pulse Duration (sec)

Document Number: 71141

S-00172Rev. A, 14-Feb-00

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