Professional Documents
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(IJARET)
Volume 7, Issue 3, MayJune 2016, pp. 0113, Article ID: IJARET_07_03_001
Available online at
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ISSN Print: 0976-6480 and ISSN Online: 0976-6499
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1. INTRODUCTION
The electrical properties of compounds, having a lamellar structure type MX2 (where
M is a metal and X a chalcogen group VI B: Se, Te or S), have been studied by many
authors because of their importance in applications in devices infrared and
photovoltaic and thermoelectric.
Most results were summarized by Wilson and Yoffe [1]. In many of these studies, it
was shown that the electrical conductivity decreases exponentially when the
temperature increases. The activation energy derived from the slopes of the graphs Ln
= f ( ), regularly grow [2, 3]. Thermoelectric power measurements (P.T.E.) obtained
by some authors in different temperature conditions and with various composition
[4,5] establishes the semiconductor character of MoTe2.Various models of band
structures have been deducted from these results [6, 7, 8]. Oslo, few authors who have
studied the Hall effect in the MoTe2. In order to supplement the results regarding
MoTe2, we performed a full characterization by Hall effect measurement. Indeed, the
Hall effect measurements allow simultaneous access to the type and the concentration
of carriers.
2. HALL EFFECT
We consider a cuboid sample subjected to the simultaneous action of orthogonals:
electric field a and magnetic induction .
The electric field
animates the free charge carriers of a drive speed e carried in
the direction of a.
The magnetic induction exerts on the carriers a known force as Lorenz:
=q e
(1)
when the carriers are n type (electron)
= -q e
(2)
in the case of p type carriers (holes).
q: a hole charge (q electron charge).
: Symbol of the cross product.
Under the effect of the Lorenz force, the trajectory of the carriers undergoes a
deviation from the direction of the applied field a and a transverse current can
appear in the sample. If the charges are not evacuated laterally, a transverse electric
field H nominated Hall field appears, opposing charge's lateral movement. This
derived field in the Hall voltage, which we denote VH (Fig. 1).
At the appearance of the Hall field H, the carriers are subject to the action of a
resultant field :
= a+
(3)
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Determination of The Type and The Density of Carriers In Mote2 Massive by Measuring The
Hall Effect
3. EXPERIMENTAL PROCEDURE
3. 1 Study of the Hall Effect continuously
3.1.1 Sample Preparation
We worked on samples of MoTe2 in the needles form. On this type of samples,
making side contacts, (contact area) is not very easy. For connection to the sample
body, we used copper son.
To ensure electrical contact with the sample, we dip the end of the copper son in
silver lacquer. The silver ball, is then carefully adhered to the sample surface as
shown in Figure 2:
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Determination of The Type and The Density of Carriers In Mote2 Massive by Measuring The
Hall Effect
Measurement methodology
In the absence of magnetic field, we set the resistance R V in order to obtain the
microvolt measurement near zero voltage.
We then apply a magnetic induction B. The indication of microvoltmeter is then the
only contribution of the Hall effect.
By artifice, we could reverse the effect of the misalignment. The value of R V is
chosen sufficiently high so as not to shunt the sample volume between the contacts 1
and 2 (Fig. 3).
3.1.3 Amplification of the Hall voltage
In addition to the stress due to misalignment, the voltages induced by the surrounding
noise can affect the measurement of VH. Furthermore, the measuring circuit must
have a sufficiently high input resistance to avoid the evacuation of lateral loads (Hall
of expenses).In order to minimize the effect of noise, the Hall voltage V H is measured
using shielded cables. A measuring amplifier carefully designed is called upon to
interface the sample and microvoltmeter (Figure 4).
In the diagram of Figure 4, control elements introduced therein to compensate for the
various offset voltages and currents. Similarly, operational amplifiers are selected
according to the above measurement conditions:
Ao1 = Ao2 = LF351
Ao3 = LM725The differential mode gain of the amplifier is given by:
+2
(1
(19)
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Les notations qui apparaissent dans cette figure sont explicites ci-aprs :
The notation that appear in this figure are explained below: E: MoTe2 sample
(R, A) amplifier made for continuous measurements (R allows zero adjustment to
make up for misalignment and A is the amplification coefficient)
I
: Power source;
uV: Microvoltmeter;
B: Magnetic field.
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Determination of The Type and The Density of Carriers In Mote2 Massive by Measuring The
Hall Effect
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Figure 8 Linearity contacts (longitudinal current I1 in function of the longitudinal tension V1)
The influence of the magnetic induction is studied for different values of the
longitudinal current I. For a given value of current I (here -1mA), the curve VH (B)
has two distinct zones (Figure 9):
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Determination of The Type and The Density of Carriers In Mote2 Massive by Measuring The
Hall Effect
VH(mV)
0,8
I=-0.1mA
I=-0.01mA
I=0.01mA
I=0.1mA
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
2000
4000
6000
8000
10000
12000
14000
16000
18000
B(Gauss)
Figure10. Joint effects of longitudinal current I and induction B (in Gauss) on the Hall
voltage VH.
a: The entire curve network; b: Scale expansion to better see the low VH curves.
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-1000
11,2 10-3
5,57 1020
-100
10,2 10-3
6,13 1020
-10
6,8 10-3
9,19 1020
+10
11,2 10-3
5,57 1020
+100
11,6 10-3
5,37 1020
These results show that the holes concentration in the MoTe2 samples studied is about
6 1020/m3. It is also very sensitive to the longitudinal current. The values found for the
carrier concentration are similar to those obtained by Jubier Jassim and al [14] in thin
layers of PbTe obtained by thermal evaporation at ambient temperature. These values
are also comparable to the manufacturer data for the doped germanium [15].
4.2 Alternative Measurements
4.2.1 Study of the Hall constant (RH) as a function of temperature
The Hall constant is studied in a temperature range extending from ambient to the
temperature of liquid nitrogen. Measurements are made in three different samples. The results
are shown in Figure 11. We observe on the curves of figure 11 a similarity great in the
behavior of samples in the vicinity of ambient temperature. RH increases precipitously when
the temperature decreases from ambient to 230 K.
14
12
10
Ln(RH)
1
2
3
0
3
(1000/T)K
10
11
-1
We can deduce that in this temperature range, the hole' concentration increases
rapidly with temperature. This behavior is typical of the intrinsic regime where
conduction occurs primarily by thermally activated jumps. At intermediate
temperatures (250K to 200K), Ln(RH) stops increasing and passes through a
maximum that corresponding to the exhaustion domain. A notorious dispersion
appears on the value of the Hall constant at very low temperatures, R H varies little.
This dispersion is probably due to the presence of acceptor states located in the
valence band.
These states contribute with a specific density NA, which ceases to be negligible
compared with the intrinsic density of holes at low temperatures. To try to explain this
singular phenomenon, we recall that the Hall constant depends on the temperature
only through the carrier concentration. Indeed, for an intrinsic semiconductor, a
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Determination of The Type and The Density of Carriers In Mote2 Massive by Measuring The
Hall Effect
statistical thermodynamics and solid state physics show that the carrier concentration
n at low temperatures are expressed by:
n = T3/2
(22)
EC: Energy of the lowest level of the conduction band
EV: Energy from the top of the valence band
T: Absolute temperature
kB: Boltzmann's constant
For a semiconductor P-type, the hole concentration remains substantially constant
(and low) at low temperatures. It increases rapidly as the temperature begins to
approach the ambient. This explains the sharp drop of R H at about ambient
temperature first, and stabilization on low temperatures as shown by the curves in
Figure 11.
4.2.2 Study of the resistivity as a function of temperature and frequency
We investigated the resistivity of monocrystalline MoTe 2 samples both depending on
the temperature (low temperature) and as a function of frequency. Les rsultats de
mesures faites en fonction de la temprature et frquence constante, sont reports
sur la figure 12, tandis que ceux de ltude en frquence sont rsums sur la figure 13.
A comparative study of the resistivity obtained by the continuous method (DC) and
the alternative method (AC) is reported in Figure 14. The resistivity is investigated
through the sample resistance because both are proportional, and the second is more
easily accessible by the measurement.
4.2.2.1 Study of the resistivity as a function of temperature
For an isotropic sample the electric conductivity is given by: = < (23)
n : electron concentration (number of electrons per volume unit)
q : elementary charge
m : mass of an electron
< : average relaxation time
The electrical resistivity being the inverse of the conductivity, it can be expressed
by:
(T) =
(24)
So depends on the temperature through average relaxation time < and more
particularly of the carrier concentration p or n. Theoretically, the resistivity varies
inversely with the concentration of carriers and thus with the temperature. That's the
evolution that can be observed on the curves in Figure 12.
7
Ln(Rac/1k)
f/f0 (kH)=0,1
f/f0 (kH)=1
f/f0 (kH)=5
f/f0 (kH)=60
f/f0 (kH)=100
f/f0 (kH)=150
f/f0 (kH)=200
(1000/T) K
-1
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120
174
206
231
6,0
141
193
221
300
Ln(Rac/1K )
5,5
5,0
4,5
4,0
3,5
3,0
-2
-1
Ln(f/f0)
This behavior has inspired us to compare the frequency effect on the resistance
measured by the continuous method (R =) on one hand, and alternative (R AC) on the
other. We obtained a network of curves Ln( ) as function of Ln( ), parameterized
by the temperature where f0 = 1 kHz. This network is presented in Figure 14.
1,0
0,5
Ln(R=/Rac)
0,0
-0,5
T=120K
T=174K
T=206K
T=231K
-1,0
T=141K
T=193K
T=221K
T=300K
-1,5
-3
-2
-1
Ln(f/f0)
Figure 14 Comparison of the frequency behavior of the resistance obtained by the AC and
DC methods.
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Determination of The Type and The Density of Carriers In Mote2 Massive by Measuring The
Hall Effect
5. CONCLUSIONS
Experimental study on molybdenum telluride samples (MoTe2) led to results that
highlight the semiconductor character of this material. This study used two methods
Hall effect measurements: the continuous measurement and the alternative
measurement.
Continues measures With such measures, made at ambient temperature, we
determined initially, the type of majority charge in the samples studied. Our
measurements reveal to the studied crystals are type P.
By studying the effect of magnetic induction to the Hall voltage, we had access to the
Hall constant and the concentration of charge carriers; it would be around 6x10 20/m3
in the samples studied. The holder concentration is highly sensitive to temperature
changes, we tried to identify this behavior by alternative measures.
AC measurements Measures AC, made of crystals on MoTe2 solid have aimed to
study:
- The evolution of the concentration of charge carriers when the temperature varies
(from ambient to the temperature of liquid nitrogen).
- The resistivity behavior for temperature or frequence variations
Concentration of charge carriers at low temperatures, the carrier concentration is
low and substantially constant (ionization mode). Around room temperature, the
concentration increases strongly with temperature, thus revealing the predominance of
the intrinsic regime.
REFERENCES
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
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