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PD -91623A
APPROVED
IRF3315
VDSS = 150V
RDS(on) = 0.07
Description
ID = 27A
TO-220AB
Parameter
Max.
27
19
108
136
0.91
20
350
12
13.6
2.5
-55 to + 175
Units
A
W
W/C
V
mJ
A
mJ
V/ns
C
Thermal Resistance
Parameter
RJC
RCS
RJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
0.50
1.1
62
C/W
1
12/09/98
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IRF3315
APPROVED
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
2.0
gfs
Forward Transconductance
11.4
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Reverse Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
V(BR)DSS
Typ.
0.187
9.6
32
49
38
LD
4.5
LS
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1300
300
160
Max. Units
Conditions
V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.07
S
VDS = 50V, ID = 12A
25
VDS = 150V, VGS = 0V
A
250
VDS = 120V, VGS = 0V, TJ = 125C
100
VGS = 20V
nA
-100
VGS = -20V
95
ID = 12A
11
nC VDS = 120V
47
VGS = 10V, See Fig. 6 and 13
VDD = 75V
ID = 12A
ns
RG = 5.1
6mm (0.25in.)
nH
G
from package
VGS = 0V
pF
VDS = 25V
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Conditions
D
MOSFET symbol
27
showing the
A
G
integral reverse
108
S
p-n junction diode.
1.3
V
TJ = 25C, IS = 12A, VGS = 0V
174 260
ns
TJ = 25C, IF = 12A
1.2 1.7
C di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
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IRF3315
APPROVED
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
100
10
4.5V
1
0.1
10
100
TJ = 25 C
100
TJ = 175 C
10
V DS = 50V
20s PULSE WIDTH
8.0
9.0
10.0
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7.0
10
100
3.0
6.0
1000
5.0
1
0.1
1
4.0
4.5V
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
I D = 27A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
TJ , Junction Temperature ( C)
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IRF3315
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2500
Ciss
2000
1500
Coss
1000
Crss
500
20
3000
C, Capacitance (pF)
APPROVED
16
10
VDS = 120V
VDS = 75V
VDS = 30V
12
0
1
ID = 12 A
100
20
40
60
80
100
100
1000
10
100
TJ = 175 C
10us
100us
10
1ms
TJ = 25 C
0.1
0.3
V GS = 0 V
0.6
0.9
1.2
TC = 25 C
TJ = 175 C
Single Pulse
1
1.5
10ms
10
100
1000
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IRF3315
APPROVED
30
RD
VDS
VGS
25
D.U.T.
RG
-VDD
20
10V
Pulse Width 1 s
Duty Factor 0.1 %
15
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( C)
10%
VGS
td(on)
tr
t d(off)
tf
10
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
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IRF3315
APPROVED
1 5V
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
V
- DD
0 .0 1
tp
1000
TOP
BOTTOM
800
ID
4.9A
8.5A
12A
600
400
200
0
25
50
75
100
125
150
175
V (B R )D SS
tp
IAS
Current Regulator
Same Type as D.U.T.
50K
QG
12V
.2F
.3F
10 V
QGS
+
V
- DS
VGS
VG
3mA
Charge
D.U.T.
QGD
IG
ID
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IRF3315
APPROVED
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
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IRF3315
APPROVED
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
-B -
3 .7 8 (.149 )
3 .5 4 (.139 )
4.69 ( .18 5 )
4.20 ( .16 5 )
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
IN TE R N A T IO N A L
R E C TIFIE R
LOGO
ASSEMBLY
L OT C O D E
PART NU MBER
IR F 1 0 10
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/98
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