AH102A

Medium Power, High Linearity Amplifier

Product Features
350 3000 MHz
+46 dBm Output IP3
14.5 dB Gain
+27 dBm P1dB
MTTF > 1000 Years
Internally Matched
Single +9 V Supply
Lead-free/Green/RoHS-compliant
SOT-89 Package

Applications

Mobile Infrastructure
W-LAN / ISM / WLL / RFID
Broadband Wireless
PowerAmp Predistortion Circuitry

Product Description

Functional Diagram

The AH102A is a medium power gain block that offers

excellent dynamic range in a low-cost surface mount
package. The combination of a single supply voltage and
an internally matched device makes it ideal for both narrow
and broadband applications.

GND

Superior thermal design allows the product to achieve +46

dBm IP3 performances at a mounting temperature of +85
C with an associated MTTF of greater than 1000 years.
The AH102A is available in the environmentally-friendly
lead-free/green/RoHS-compliant SOT-89 package.

Operational Bandwidth
Test Frequency
Gain
Output IP3 (2)
Output P1dB
Noise Figure
Test Frequency
Gain
Output IP3 (2)
Output P1dB
Operating Current Range
Supply Voltage

RF IN

GND

RF OUT

Function
Input
Ground
Output / Bias
Ground

The broadband amplifier uses a high reliability GaAs

MESFET technology and is targeted for applications where
high linearity is required. It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AH102A will work for other applications within the 250 to
3000 MHz frequency range such as broadband wireless.

Specifications (1)
Parameter

Pin No.
1
2
3
4

Typical Performance (3)

Units Min
MHz
MHz
dB
dBm
dBm
dB
MHz
dB
dBm
dBm
mA
V

Typ

350
12.5
+43

11.5
+42

800
14.4
+46
+27
3.1
1900
13
+44.5
+27
200
+9

Max

Parameter

3000

Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power

Units

@ -45 dBc ACPR

W-CDMA Channel Power

@ -45 dBc ACLR

230

1. Test conditions unless otherwise noted: T = 25 C, Vdd = +9 V in a 50 ohm test fixture.

2. OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule.

Noise Figure
Supply Current
Supply Voltage

Typical

MHz
dB
dB
dB
dBm
dBm

900
14.5
22
30
+27
+46

1900
13.6
16
15
+27
+45

dBm

+21

+20

dBm
dB
mA
V

2140
13.5
19
15
+27
+44

+18.2
3.1

3.8
200
+9

3.7

3. Parameters reflect performance in a tuned application circuit.

Absolute Maximum Rating

Parameter

Rating

Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth

-55 to +150 C
+11 V
+17 dBm
160 C
25 C / W

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information
Part No.

Description

AH102A-G

Medium Power, High Linearity Amplifier

(lead-free/green/RoHS-compliant SOT-89 package)

AH102A-PCB900 900 MHz Fully Assembled Evaluation Board

AH102A-PCB2000 1.7-2.2 GHz Fully Assembled Evaluation Board
Standard T/R size = 1000 pieces on a 7 reel.

TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com

June 2012

AH102A
Medium Power, High Linearity Amplifier

Typical Device Data

VDS = +9 V, IDS = 200 mA, T = 25 C, unmatched 50 ohm system
S-Parameters

Output IP3 vs. Frequency

Vd = +9V, Temp = 25C

8 dBm / tone, 10 MHz spacing, Temp = 25C

P1dB vs. Frequency

20

50

28

10

46

26

42

24

-10

38

22

-20

34
S11

-30
0

500

S22

S21

1000 1500 2000 2500 3000

20
+7 V

+8 V

+9 V

+7 V

30

+8 V

+9 V

18

500

1000

Frequency (MHz)

1500

2000

2500

3000

500

1000

Frequency (MHz)

1500
2000
Frequency (MHz)

2500

3000

S-Parameters (VDS = +9 V, IDS = 200 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)

50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000

S11 (dB)

S11 (ang)

S21 (dB)

S21 (ang)

S12 (dB)

S12 (ang)

S22 (dB)

S22 (ang)

-10.52
-14.38
-15.96
-14.26
-12.32
-10.79
-9.66
-8.75
-8.08
-7.37
-6.87
-6.37
-6.00
-5.61
-5.12
-4.66
-4.43

-67.44
-71.97
-79.59
-97.77
-113.84
-127.15
-138.79
-149.08
-157.98
-165.53
-171.92
-178.50
174.94
169.08
162.18
156.21
152.94

16.70
15.99
15.67
15.34
15.05
14.64
14.33
13.99
13.67
13.45
13.24
13.02
12.78
12.59
12.42
12.14
11.96

161.42
164.33
161.23
149.69
136.98
125.04
113.77
102.45
91.00
80.21
69.79
58.73
47.41
36.08
23.91
11.75
5.65

-19.60
-19.33
-19.25
-19.46
-19.68
-20.00
-20.41
-20.76
-21.26
-21.75
-22.32
-22.88
-23.60
-24.44
-25.41
-26.51
-27.12

15.17
4.56
-3.24
-13.66
-22.39
-29.57
-37.29
-43.79
-50.64
-56.57
-63.25
-69.25
-76.47
-82.56
-88.72
-93.74
-96.59

-13.87
-20.59
-31.69
-24.05
-19.28
-16.57
-14.96
-13.80
-12.94
-12.17
-11.48
-11.05
-10.74
-10.46
-10.05
-9.83
-9.68

-71.59
-73.74
-37.96
41.02
34.21
23.81
12.82
1.56
-9.52
-21.95
-34.63
-47.68
-61.29
-74.90
-88.98
-103.94
-110.63

Device S-parameters are available for download off of the website at: http://www.wj.com

Application Circuit PC Board Layout

Circuit Board Material: .014 Getek (r=4.2), four layer, 1 oz copper

Microstrip line details: width = .026, spacing = .026

TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com

June 2012

AH102A
Medium Power, High Linearity Amplifier

Application Circuit: 900 MHz (AH102A-PCB900)

Typical RF Performance at 25C
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
IS-95A Ch. Power

ID=R1
R=0 Ohm

900 MHz
14.5 dBm
22 dB
30 dB
+27 dBm
+46 dBm

ID=C4
C= 1e4 pF
0805

+9 V

ID=C3
C=100 pF
ID=L2
L=22 nH

ID=C6
C=100 pF

ID=C1
C=100 pF

+21 dBm

@ -45 dBc ACPR

Noise Figure
Supply Voltage
Supply Current

ID=L1
L=6.8 nH

3.1 dB
+9 V
200 mA

NET="AH102A"

ID=C2
C=3.3 pF

Notes:
1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit.

S11 vs. Frequency

S21 vs. Frequency

0
+25 C

15

-5

-40 C

+85 C

-10
-15
-20

14
13
12

-25
-30
700

S 2 2 (d B )

-40 C

S 2 1 (d B )

S 1 1 (d B )

-5

S22 vs. Frequency

16

-40 C

800

900

11
700

1000

+25 C

800

-10
-15
-20

-30
700

1000

800

Frequency (MHz)

Frequency (MHz)

900

1000

Frequency (MHz)

OIP3 vs. Temperature

OIP3 vs. Output Power

900 MHz, 8 dBm/ tone

frequency = 900 MHz, Temp = 25C

50

+85 C

-25

+85 C

900

+25 C

50

45
45

40
35

40

30
35

25
+7 V

+8 V

+7 V

+9 V

20

+8 V

+9 V

30

-40

-20

20

40

60

80

12

Temperature (C)

Output Power (dBm)

ACPR vs. Channel Power

Noise Figure vs. Frequency

900 MHz, IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW

16

Temp = 25 C

-40

5
N o is e F ig u re (d B )

A C P R (d B c )

+25 C
-40 C

-50

+85 C

-60
-70
-80
14

16

18

20

Channel Power (dBm)

22

4
3
2
1
0
700

800

900

1000

Frequency (MHz)

TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com

June 2012

AH102A
Medium Power, High Linearity Amplifier

Application Circuit: 1900 / 2140 MHz (AH102A-PCB2000)

Typical RF Performance at 25C
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
IS-95A Ch. Power

1900
13.6
16
15
+27
+45

2140
13.5
19
15
+27
+44

Units
dB
dB
dB
dBm
dBm

+20

@ -45 dBc ACPR

ID=C4
C= 1e4 pF
0805

+9 V

ID=C3
C=56 pF
ID=L2
L=15 nH

ID=C6
C=56 pF

ID=C1
C=56 pF

dBm

W-CDMA Ch. Power

@ -45 dBc ACLR

Noise Figure
Supply Voltage
Supply Current

ID=R1
R=0 Ohm

+18.2

dBm

3.7

dB
V
mA

3.8
+9
200

ID=L1
L=1.8 nH
NET="AH102A"

ID=C2
C= 1.5 pF

Notes:
1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required.
2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier.
3. R1 is used as a placeholder for a different application circuit. It can be removed from the circuit.

S11 vs. Frequency

S21 vs. Frequency

S 1 1 (d B )

-5

S 2 1 (d B )

+25 C
-40 C
+85 C

-10
-15
-20

15

14

-5

13
12

+25 C
-40 C
+85 C

11

-25

S 2 2 (d B )

S22 vs. Frequency

1.8

1.9

2.1

2.2

1.7

1.8

1.9

Frequency (MHz)

2.1

-10
-15
-20
-25

10
1.7

+25 C
-40 C
+85 C

1.7

2.2

1.8

OIP3 vs. Output Power

OIP3 vs. Output Power

frequency = 1900 MHz

frequency = 2140 MHz

50

50

45

45

40

40

35

35

1.9

2.1

2.2

Frequency (MHz)

Frequency (MHz)

P1dB vs. Frequency

28

-40C

+25C

P 1 d B (d B m )

27

-40C

+25C

10

11

12

Output Power (dBm)

23

10

1.7

11

ACPR vs. Channel Power

ACLR vs. Channel Power

2140 MHz, 3GPP W-CDMA, Test Model 1 +64 DPCH, 5 MHz offset

1.9

2.1

2.2

Noise Figure vs. Frequency

-40

A C L R (d B c )

+85 C

-60

-70

N o is e F ig u re (d B )

+25 C

-40 C

-40 C

-45

+85 C

-50
-55
-60

14

1.8

Frequency (GHz)

1900 MHz, IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW

+25 C

-50

+25 C
-40 C
+85 C

Output Power (dBm)

-40

A C P R (d B c )

+85C

30
6

25
24

+85C

30

26

16

18

20

Channel Power (dBm)

22

4
3
2

+25 C
-40 C
+85 C

1
0

14

15

16

17

18

19

1.7

1.8

Channel Power (dBm)

TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com

1.9

2.0

2.1

2.2

Frequency (GHz)
June 2012

AH102A
Medium Power, High Linearity Amplifier

AH102A-G (Green / Lead-free SOT-89 Package) Mechanical Information

This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded
(maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.

Outline Drawing

Product Marking
The AH102A-G will be marked with a
102AG designator and an alphanumeric lot
code.

102AG
XXXX-X

Tape and reel specifications for this part are

located on the website in the Application
Notes section.

MSL / ESD Rating

Land Pattern

ESD Rating:
Value:
Test:
Standard:

Class 1C
Passes 1000V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114

ESD Rating:
Value:
Test:
Standard:

Class IV
Passes 1000V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101

MSL Rating: Level 1 at +260 C convection reflow

Standard:
JEDEC Standard J-STD-020

Mounting Config. Notes

1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135) diameter drill and have a final plated thru
diameter of .25 mm (.010).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contact the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.

TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com

June 2012