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MGF0911A
L & S BAND /12W
non - matched
DESCRIPTION
OUTLINE DRAWING
Unitmillimeters
FEATURES
Class A operation
High output power
P1dB=41.0dBm(T.Y.P) @f=2.3GHz
High power gain
GLP=11.0dB(TYP.)
@f=2.3GHz
High power added efficiency
P.A.E=40%(TYP.)
@f=2.3GHz,P1dB
Hermetically sealed metal-ceramic package with ceramic lid
17.5
4 MIN
6.35
1.0
4.8
MGF0910S-01
APPLICATION
4 MIN
QUALITY
IG
14.4
9.4
Symbol
(Ta=25C)
Parameter
Ratings
Unit
-15
VGSO
-15
ID
Drain Current
10
IGR
-30
mA
IGF
63
mA
PT*1
53.6
Tch
Cannel temperature
175
Tstg
Storage temperature
-65 to +175
0.1
1.1
2.26
0.1
Ids=2.6A
4.5MAX
Vds=10V
10.0
GATE
SOURCE
DRAIN
GF-21
*1:Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
VDS=3V, VGS=0V
Limits
Unit
Min.
Typ.
Max.
10
IDSS
gm
Transconductance
VDS=3V, ID=2.6A
VGS(off)
VDS=3V,ID=20mA
-2
-5.0
P1dB
VDS=10V,ID(RF off)=2.6A
40
41
dBm
GLP *2
f=2.3GHz
10
P.A.E
*2 : Pin=22dBm
Rth(ch-c) *3
Thermal resistance
Vf method
*3 :Channel-case
Specification are subject to change without notice.
11
dB
40
2.8
C/W
MGF0911A
L & S BAND / 12W
non - matched
MGF0911A
L & S BAND / 12W
non - matched
MGF0911A
L & S BAND / 12W
non - matched
MGF0911A
L & S BAND / 12W
non - matched