MJE13003

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SILICON
NPN POWER TRANSISTOR

DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE13003 is a
silicon NPN power transistor designed for high speed
power switching applications.

MARKING: FULL PART NUMBER

TO-126 CASE
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage
VCEV
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Peak Base Current
IBM
Continuous Emitter Current
IE
Peak Emitter Current
IEM
Power Dissipation
PD
Power Dissipation (TA=25C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JA
Thermal Resistance
JC
ELECTRICAL
SYMBOL
ICEV
ICEV
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
fT
Cob

400
700
9.0
1.5
3.0
0.75
1.5
2.25
4.5
40
1.4
-65 to +150
89.0
3.12

CHARACTERISTICS: (TC=25C unless otherwise noted)

TEST CONDITIONS
MIN
TYP
VCE=700V, VBE(OFF)=1.5V
VCE=700V, VBE(OFF)=1.5V, TC=100C
VEB=9.0V
IC=10mA
400
IC=0.5A, IB=0.1A
IC=1.0A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1.0A, IB=0.25A
VCE=2.0V, IC=0.5A
8.0
VCE=2.0V, IC=1.0A
5.0
VCE=10V, IC=100mA, f=1.0MHz
4.0
VCB=10V, IE=0, f=100kHz
40

MAX
1.0
5.0
1.0
0.5
1.0
3.0
1.0
1.2
40
25

UNITS
V
V
V
A
A
A
A
A
A
W
W
C
C/W
C/W

UNITS
mA
mA
mA
V
V
V
V
V
V

MHz
pF

R1 (23-October 2013)

MJE13003
SILICON
NPN POWER TRANSISTOR

ELECTRICAL
SYMBOL
td
tr
ts
tf

CHARACTERISTICS - Continued: (TC=25C unless otherwise noted)

TEST CONDITIONS
TYP
MAX
Resistive Load
0.1
VCC=125V, IC=1.0A, IB1=IB2=0.2A
1.0
tp=25s, Duty Cycle < 1.0%
4.0
0.7

tsv
tc
tfi

Inductive Load
IC=1.0A, Vclamp=300V, IB1=0.2A
VBE(off)=5.0V, TC=100C

UNITS
s
s
s
s
s
s
s

4.0
0.75
0.15

TO-126 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Base
2) Collector
3) Emitter
MARKING:
FULL PART NUMBER

R1 (23-October 2013)
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