COIMBATORE INSTITUTE OF TECHNOLOGY

(Government Aided Autonomous Institution)

Department of Electrical and Electronics Engineering

Register Number: ___________

23-02-2015

B.E- EEE- II Semester (Section I)

Maximum Marks:50
Time Duration:

120 minutes

I Mid- Semester Examination

13FY25 Electron Devices and Circuits

Section I
Answer all the questions:

10x1=10

1. When a transistor is saturated

A) The emitter potential is more than the base collector potential
B) The collector potential is more than the base emitter potential
C) The base potential is more than the emitter collector potential
D) The base, emitter and collector are almost the same potential
2. If the value of a transistor changes 0.5% from its nominal value of 0.9, the percent
change in will be
A) 0%
B)2.5%
C)5%
D)7.5%
3. The input and output impedance of BJT under common collector configuration is
A) High and low respectively
B) High and high respectively
C) Low and low respectively
D) Low and high respectively
4. Consider the following statements related to JFET:
1. Its operation depends on the flow of minority carriers only
2. It is less noisy than BJT
3. It has poor thermal stability
4. It is relatively immune to radiation.
5. It has high input impedance
The correct statements are
A) 1,2,3,4 and 5
B) 1,2 and 5 only
C) 2,4 and 5 only
D) 3,4 and 5 only
5. The collector and emitter current levels for a transistor with common base dc current
gain of 0.99 and base current of 20A are respectively
A) 2mA and 1.98mA
B) 1.98A and 2mA
C) 1.98mA and 2mA
D) 2mA and 1.98A
6. A bipolar transistor is operating in the active region with a collector current of 1mA.
VT
gm
Assume =100 and thermal voltage
= 25mV, then the transconductance
is
____ for the transistor in the common emitter configuration.
r
7. For the question 6 , base resistance is__________.
8. For the question number 6, emitter resistance

I DSS

9. For an n channel JFET, the readings of

Then the corresponding values of

gmo

re

is__________.
=8.7mA,

= _______ and

10.Find the pin details of the following transistor

gm

VP

= -3V,

V GS

=_________.

= -1V.

Section B
Answer any ten from the following questions succinctly.
1. What is Early effect in a transistor?
2. What is space charge region in a transistor? How is it formed?

IS

10x2=20

3.

Write the expression reverse saturation current

(scale current) in a transistor? How it

4.
5.
6.
7.

is related to junction area and effective base width?

What is operating point? What are the factors the affect the stability of operating point?
Derive stability factor S for a transistor.
What is DC load line? Draw the DC load line for any bias circuit.
Write the Shockley equation for JFET. And explain each term in it.

8. What is reverse leakage current in a transistor? Explain why

I CEO >> I CBO .

9. Why BJT is called bipolar device and FET is called unipolar device? Mention some trivalent,
tetravalent and pentavalent elements
10. A transistor is operated in saturation region then
(a) Mention the relation between
(b)What is ideal value for

I C and I B .

V CE in saturation?

11. What is meant by small signal analysis of a transistor? What is the condition on input signal
for small signal analysis?
12. What is the reason to equivalent model a transistor?
13. Explain why gate current is zero in enhancement MOSFET?
14. What is pinch off voltage in JFET?
Section C

10x2=20

Elucidate any two of the following questions in detail.

1.

Explain the construction and operation of n channel Enhancement type MOSFET. Draw its
transfer and drain characteristics. And also derive it Drain current at various region. (10)
2. Derive in detail about the bipolar junction transistor current components using minority
carrier concentration profile
(10)
3. Model a BJT in common emitter mode operated using voltage divider configuration using r
parameter model. Derive current gain, voltage gain, input impedance and output impedance
using r parameter model in an amplifier.
(10)
4. Consider the common emitter amplifier circuit shown in figure
(10)

a. Suppose =100,

V BE Q =0.7 V

RC =2 K ,

R E=100 ,

R L=2 K and V CC = 20V. Determine the value required for

RB , for

IC

= 5mA.

b. Determine its operating region.

2

c. Draw the small signal equivalent circuit by assuming coupling capacitor

as short circuit.
d. Derive the expression for the voltage gain in terms of
e. Using the expression from d find voltage gain.
------------All the Best--------------

and .