IRFP150A

Advanced Power MOSFET

FEATURES

BVDSS = 100 V

Avalanche Rugged Technology

RDS(on) = 0.04

Rugged Gate Oxide Technology

Lower Input Capacitance

ID = 43 A

Improved Gate Charge

Extended Safe Operating Area

TO-3P

175 C Operating Temperature

Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.032 (Typ.)

1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol
VDSS

Characteristic
Drain-to-Source Voltage

43
30.4

1
O

Drain Current-Pulsed

VGS

Gate-to-Source Voltage

EAS

Single Pulsed Avalanche Energy

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

O
1
O
1
O
O3
2

170

+
_ 20

740

mJ

43

19.3

mJ

6.5

V/ns

Total Power Dissipation (TC=25 C )

193

Linear Derating Factor

1.28

W/ C

TJ , TSTG

Continuous Drain Current (TC=100 C)

IDM

PD

Units

100

Continuous Drain Current (TC=25 C)

ID

Value

Operating Junction and

- 55 to +175

Storage Temperature Range

TL

Maximum Lead Temp. for Soldering

300

Purposes, 1/8 from case for 5-seconds

Thermal Resistance
Symbol

Characteristic

Typ.

Max.

R JC

Junction-to-Case

--

0.78

R CS

Case-to-Sink

0.24

--

R JA

Junction-to-Ambient

--

40

Units

C /W

Rev. B

1999 Fairchild Semiconductor Corporation

N-CHANNEL
POWER MOSFET

IRFP150A

Electrical Characteristics (TC=25 C unless otherwise specified)

Symbol

Characteristic

BVDSS

Drain-Source Breakdown Voltage

BV/ TJ
VGS(th)
IGSS
IDSS
RDS(on)

Min. Typ. Max. Units

100

--

--

0.11

--

V/ C

2.0

--

4.0

Gate-Source Leakage , Forward

--

--

100

Gate-Source Leakage , Reverse

--

--

-100

--

--

10

--

--

100

--

--

0.04

VGS=10V,ID=21.5A

4
O

--

VDS=40V,ID=21.5A

4
O

Gate Threshold Voltage

Drain-to-Source Leakage Current

Static Drain-Source
On-State Resistance
Forward Transconductance

--

28.34

Ciss

Input Capacitance

--

1750 2270

Coss

Output Capacitance

--

420

485

Crss

Reverse Transfer Capacitance

--

185

215

td(on)

Turn-On Delay Time

--

17

50

Rise Time

--

20

50

Turn-Off Delay Time

--

80

160

Fall Time

--

45

100

Qg

Total Gate Charge

--

75

97

Qgs

Gate-Source Charge

--

13.2

--

Qgd

Gate-Drain(Miller) Charge

--

34.8

--

td(off)
tf

VGS=0V,ID=250 A
ID=250 A
See Fig 7

--

Breakdown Voltage Temp. Coeff.

gfs

tr

Test Condition

nA
A

pF

VDS=5V,ID=250 A
VGS=20V
VGS=-20V
VDS=100V

VDS=80V,TC=150 C

VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=40A,

ns

RG=6.2
See Fig 13

4 O
5
O

VDS=80V,VGS=10V,
nC

ID=40A
See Fig 6 & Fig 12

4 O
5
O

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

Min. Typ. Max. Units

Test Condition

IS

Continuous Source Current

--

--

43

ISM

Pulsed-Source Current

1
O

--

--

170

VSD

Diode Forward Voltage

4
O

--

--

1.6

TJ=25 C ,IS=43A,VGS=0V

trr

Reverse Recovery Time

--

135

--

TJ=25 C ,IF=40A

Qrr

Reverse Recovery Charge

--

0.65

--

ns
C

Notes ;
Temperature
1
O Repetitive Rating : Pulse Width Limited by Maximum Junction
o
2
L=0.6mH, I AS=43A, V DD=25V, R G=27 , Starting T J =25 C
O
O3 ISD <_ 40A, di/dt <_ 470A/ s, VDD<_ BVDSS , Starting T J =25 oC
_2%
4 Pulse Test : Pulse Width = 250 s, Duty Cycle <
O
Essentially
Independent
of
Operating
Temperature
5
O

Integral reverse pn-diode

in the MOSFET

diF/dt=100A/ s

4
O

N-CHANNEL
POWER MOSFET

IRFP150A

Fig 1. Output Characteristics

VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V

[A]

Top :

ID , Drain Current

[A]

102

ID , Drain Current

Fig 2. Transfer Characteristics

10

@ Notes :
1. 250 s Pulse Test
2. TC = 25 oC

100

10-1

100

102

175 oC

101
25 oC

- 55 oC
100

101

3. 250 s Pulse Test

10

VGS , Gate-Source Voltage [V]

[A]

VDS , Drain-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current

Fig 4. Source-Drain Diode Forward Voltage

0.06

0.05

IDR , Reverse Drain Current

RDS(on) , []
Drain-Source On-Resistance

@ Notes :
1. VGS = 0 V
2. VDS = 40 V

VGS = 10 V

0.04

0.03
VGS = 20 V

0.02

0.01
@ Note : TJ = 25 oC
25

50

75

100

125

150

101

175

@ Notes :
1. VGS = 0 V

175 oC
o

2. 250 s Pulse Test

25 C
100
0.4

0.00
0

102

0.6

0.8

ID , Drain Current [A]

1.0 1.2

1.4

1.6

1.8

2.0

2.2

2.4 2.6

2.8

VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 6. Gate Charge vs. Gate-Source Voltage

Ciss= Cgs+ Cgd ( Cds= shorted )

Coss= Cds+ Cgd

[V]

Capacitance

[pF]

C iss

Crss= Cgd

VGS , Gate-Source Voltage

3000

2000
C oss

1000

00
10

@ Notes :
1. VGS = 0 V

C rss

2. f = 1 MHz

101

VDS , Drain-Source Voltage [V]

VDS = 20 V

10

VDS = 50 V
VDS = 80 V

@ Notes : ID =40.0 A
0

10

20

30

40

50

60

QG , Total Gate Charge [nC]

70

80

N-CHANNEL
POWER MOSFET

Fig 7. Breakdown Voltage vs. Temperature

1.2

1.1

1.0

0.9

Fig 8. On-Resistance vs. Temperature

RDS(on) , (Normalized)
Drain-Source On-Resistance

BVDSS , (Normalized)
Drain-Source Breakdown Voltage

IRFP150A

@ Notes :
1. VGS = 0 V
2. ID = 250 A

0.8
-75

-50

-25

25

50

75

100

125

150

175

3.0

2.5

2.0

1.5

1.0
@ Notes :
1. VGS = 10 V

0.5

2. ID = 20.0 A
0.0
-75

200

-50

-25

25

50

75

100

125

150

175

200

TJ , Junction Temperature [ oC]

TJ , Junction Temperature [ oC]

Fig 9. Max. Safe Operating Area

Fig 10. Max. Drain Current vs. Case Temperature

[A]

102

100 s

ID , Drain Current

Operation in This Area

is Limited by R DS(on)
10 s

1 ms
10 ms
DC

101

@ Notes :
1. TC = 25 oC

100

40

30

20

10

2. TJ = 175 oC
3. Single Pulse
10-1
100

101

0
25

102

50

75

100

125

Tc , Case Temperature [ oC]

VDS , Drain-Source Voltage [V]

Fig 11. Thermal Response

Thermal Response

100

D=0.5
@ Notes :
1. Z J C (t)=0.78

0.2

C/W Max.

2. Duty Factor, D=t1 /t2

10- 1
0.1

3. TJ M -TC =PD M *Z

J C

(t)

0.05

PDM
0.02
0.01

t1
single pulse

t2

Z JC(t) ,

ID , Drain Current

[A]

50
103

10- 2
10- 5

10- 4

10- 3

10- 2

10- 1

t 1 , Square Wave Pulse Duration

100

[sec]

101

150

175

N-CHANNEL
POWER MOSFET

IRFP150A
Fig 12. Gate Charge Test Circuit & Waveform

Current Regulator
50K
12V

VGS

Same Type
as DUT

Qg

200nF

10V

300nF

VDS

Qgd

Qgs

VGS
DUT
3mA

R1

R2

Current Sampling (I G)
Resistor

Charge

Current Sampling (I D)
Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout

Vout

90%

VDD

Vin

( 0.5 rated V DS )

RG
DUT
Vin

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD

LL
VDS
Vary tp to obtain
required peak ID

BVDSS
IAS

ID

RG

C
DUT

ID (t)

VDD

VDS (t)

VDD

10V
tp

tp

Time

N-CHANNEL
POWER MOSFET

IRFP150A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
--

IS
L
Driver

VGS
RG
VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
IS controlled by Duty Factor D

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

IS
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

Vf

Body Diode
Forward Voltage Drop

VDD

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
CoolFET
CROSSVOLT
E2CMOSTM
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC

ISOPLANAR
MICROWIRE
POP
PowerTrench
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
TinyLogic

UHC
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.