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MCQsinFieldEffectTransistorAmplifiers|PinoyBIX
MCQs in Field Effect Transistor Amplifiers
ThisistheMultipleChoiceQuestionsinFieldEffectTransistorAmplifiers
fromthebookElectronicDevicesandCircuitTheory10thEditionby
RobertL.Boylestad.IfyouarelookingforareviewerinElectronics
Engineeringthiswilldefinitelyhelp.Icanassureyouthatthiswillbea
greathelpinreviewingthebookinpreparationforyourBoardExam.
Makesuretofamiliarizeeachandeveryquestionstoincreasethe
chanceofpassingtheECEBoardExam.
Online Questions and Answers Topic Outline

MCQsinFETAmplifiers
MCQsinFETSmallSignalModel
MCQsinJFETFixedBiasConfiguration
MCQsinJFETSelfBiasConfiguration
MCQsinJFETVoltageDividerConfiguration
MCQsinJFETSourceFollower(CommonDrain)
Configuration
MCQsinJFETCommonGateConfiguration
MCQsinDepletiontypeMOSFETs
MCQsinEnhancementtypeMOSFETs
MCQsinEMOSFETDrainFeedbackConfiguration
MCQsinEMOSFETVoltageDividerConfiguration
MCQsinDesigningFETAmplifierNetworks
Practice Exam Test Questions

http://www.pinoybix.com/2014/04/fieldeffecttransistoramplifiersmcqs_8.html
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Choosetheletterofthebestanswerineachquestions.
1.FETamplifiersprovide________.
A)excellentvoltagegain
B)highinputimpedance
C)lowpowerconsumption
D)Alloftheabove
2.ABJTisa________controlleddevice.
A)current
B)voltage
C)power
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D)resistance
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3.AnFETisa________controlleddevice.
A)current
B)voltage
C)power
D)resistance
4.TheEMOSFETisquitepopularin________applications.
A)digitalcircuitry
B)highfrequency
C)buffering
D)Alloftheabove
5.WhatistherangeofgmforJFETs?
A)1Sto10S
B)100Sto1000S
C)1000Sto5000S
D)10000Sto100000S
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6.ForwhatvalueofID isgmequalto0.5gm0?
A)0mA
B)0.25IDSS
C)0.5IDSS
D)IDSS
7.WhatisthetypicalvaluefortheinputimpedanceZiforJFETs?
A)100k
B)1M
C)10M
D)1000M
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8. Referring to the transfer characteristics shown below, calculate

gm at
VGSQ=1V.
A)2mS
B)3mS
C)4mS
D)5mS
9.UsethefollowingequationtocalculategmforaJFEThavingIDSS=10
mA,VP=5V,andVGSQ=2.5V.
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A)2mS
B)3mS
C)4mS
D)5mS
10.Referringtothefollowingfigure,calculategmforVGSQ=1.25V.
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A)2mS
B)2.5mS
C)2.75mS
D)3.25mS
11.Referringtothisfigure,obtaingmforID=6mA.
A)2.83mS
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B)3.00mS
C)3.25mS
D)3.46mS
12.Referringtothefigurebelow,determinetheoutputimpedanceforVGS
=3VatVDS=5V.
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A)100k
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B)80k
C)25k
D)5k
13.Calculategmandrdifyfs=4mSandyos=15S.
A)4mS,66.7k
B)4mS,15k
C)66.7k,4mS
D)Noneoftheabove
14. The steeper the slope of the ID versus VGS curve, the ________ the
levelofgm.
A)less
B)same
C)greater
15.WhenVGS=0.5Vpgmis________themaximumvalue.
A)onefourth
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B)onehalf
C)threefourths
D)twothirds
16.IfID =IDSS/2,gm=___________gmo.
A)1
B)0.707
C)0.5
D)1.414
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17. The more horizontal the characteristic curves on the drain
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characteristics,the________theoutputimpedance.
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A)less
B)same
C)greater
18.Whatis(are)thefunction(s)ofthecouplingcapacitorsC1andC2inan
FETcircuit?
A)tocreateanopencircuitfordcanalysis
B)toisolatethedcbiasingarrangementfromtheapplied
signalandload
C)tocreateashortcircuitequivalentforacanalysis
D)Alloftheabove
19.WheredoyougetthelevelofgmandrdforanFETtransistor?
A)fromthedcbiasingarrangement
B)fromthespecificationsheet
C)fromthecharacteristics
D)Alloftheabove
20.Referringtothisfigure,findZoifyos=20S.
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A)1.85k
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B)1.92k
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C)2.05k
D)2.15k
21.Referringtothisfigure,calculateAv ifyos=20S.
A)3.48
B)3.56
C)3.62
D)4.02
22.Forthefixedbiasconfiguration,ifrd<10RD ,thenZo=________.
A)RD
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B)RD||rd
C)RG
D)gm(RD||rd)
23.Whichofthefollowingisarequiredconditiontosimplifytheequations
forZoandAv fortheselfbiasconfiguration?
A)rd10RD
B)rd=RD
C)rd10RD
D)Noneoftheabove
24.Referringtothisfigure,calculateZoifyos=40S.
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A)2.92k
B)3.20k
C)3.25k
D)3.75k
25.Onwhichofthefollowingparametersdoesrdhavenoorlittleimpactin
asourcefollowerconfiguration?
A)Zi
B)Zo
C)Av
D)Alloftheabove
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26.Referringtothisfigure,calculateZoforVGSQ=3.2V.
A)362.52
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B)340.5
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C)420.5
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D)480.9
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27. Referring to this figure, calculate Zi for yos = 20 S. Assume VGSQ =

2.2V.
A)300.2
B)330.4
C)340.5
D)350.0
28.Whichofthefollowingis(are)relatedtodepletiontypeMOSFETs?
A)VGSQ canbenegative,zero,orpositive.
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B)gmcanbegreaterorsmallerthangm0 .
C)IDcanbelargerthanIDSS .
D)Alloftheabove
29.Referringtothisfigure,calculateAv foryos=58S.
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A)7.29
B)7.50
C)8.05
D)8.55
30.Referringtothisfigure,calculateZi ifrd=19k.
A)2.42M
B)2.50M
C)2.53M
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C)2.59M
31.Referringtothisfigure,calculateZoifrd=19k.
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A)1.75k
B)1.81k
C)1.92k
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D)2.00k
32.Referringtothisfigure,calculateAv ifrd=19k.
A)2.85
B)3.26
C)2.95
D)3.21
33.DeterminethevalueforRD iftheacgainis8.
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A)1.51k
B)1.65k
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C)1.85k
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D)2.08k
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34. Referring to this figure, calculate the value of RD if the ac gain is 10.
AssumeVGSQ=Vp.
A)2.2k
B)2.42k
C)2.62k
D)2.82k
35.ForanFETsmallsignalamplifier,onecouldgoabouttroubleshootinga
circuitby________.
A)viewingthecircuitboardforpoorsolderjoints
B)usingadcmeter
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C)applyingatestacsignal
D)Alloftheabove
Fill-in-the-blanks Questions
1.Afieldeffecttransistoramplifierprovidesexcellentvoltagegainwiththe
addedfeatureofa_____inputimpedance.
A)low
B)medium
C)high
D)Noneoftheabove
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2. The depletion MOSFET circuit has a _____ input impedance than a

similarJFETconfiguration.
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A)muchhigher
B)muchlower
C)lower
D)higher
3.The_____isquitepopularindigitalcircuits,especiallyinCMOScircuits
thatrequireverylowpowerconsumption.
A)JFET
B)BJT
C)DtypeMOSFET
D)EtypeMOSFET
4._____istheamplificationfactorinFETtransistoramplifiers.
A)Zi
B)gm
C)ID
D)IG
5._____isanundefinedquantityinaJFET.
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A)Ai
B)Av
C)Zi
D)Zo
6.The_____controlsthe_____ofanFET.
A)ID ,VGS
B)VGS ,ID
C)IG ,VDS
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D)IG ,ID
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7.Transconductanceistheratioofchangesin_____.
A)IDtoVGS
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B)IDtoVDS
C)VGStoIG
D)VGStoVDS
8.Thetransconductancegm_____astheQpointmovesfromVptoIDSS
A)decreases
B)remainsthesame
C)increases
D)Noneoftheabove
9.gmhasitsmaximumvalueforaJFETat_____.
A)Vp
B)0.5Vp
C)0.3Vp
D)IDSS
10.Thevalueofgmisatitsmaximumgm0atVGSequalto_____andzero
atVGSequalto_____.
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A)0V,Vp
B)Vp,0V
C)0.5Vp,0.3Vp
D)0.3Vp,0.5Vp
11.TherangeofinputimpedanceZi forMOSFETsis_____.
A)1k10k
B)100k1M
C)10M100M
D)1012to1015
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12.TherangeofoutputadmittanceyosforFETsis_____.
A)5S10S
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B)10S50S
C)50S100S
D)200S500S
13.The_____configurationhasthedistinctdisadvantageofrequiringtwo
dcvoltagesources.
A)selfbias
B)voltagedivider
C)fixedbias
D)Alloftheabove
14. _____ is the networkinput impedance for a JFET fixedbias

configuration.
A)RG
B)RD
C)Zero
D)Noneoftheabove
15._____isarequiredstepinordertocalculateZo.
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A)SettingIGequaltozero
B)SettingViequaltozero
C)SettingIDequaltoIDSS
D)Noneoftheabove
16._____configuration(s)has(have)ZoRD .
A)Fixedbias
B)Selfbias
C)Voltagedivider
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D)Alloftheabove
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17. _____ is the only parameter that is different between voltagedivider
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andfixedbiasconfigurations.
A)Zi
B)Av
C)Zo
D)Noneoftheabove
18.Theinputandoutputsignalsareinphaseina_____configuration.
A)fixedbias
B)sourcefollower
C)voltagedivider
D)selfbias
19.A_____configurationhasavoltagegainlessthan1.
A)fixedbias
B)selfbias
C)sourcefollower
D)voltagedivider
20. The input and output signals are 180 out of phase in a _____
configuration.
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A)sourcefollower
B)commongate
C)commondrain
D)voltagedivider
21. The isolation between input and output circuits in the ac equivalent
circuitislostina_____configuration.
A)commongate
B)commonsource
C)commondrain
D)Noneoftheabove
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22. The _____ configuration has an input impedance, which is other than
RG.
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A)commonsource
B)commongate
C)commondrain
D)Noneoftheabove
23.ThegatetosourcevoltageVGSofa(n)_____mustbelargerthanthe
thresholdVGS(Th)forthetransistortoconduct.
A)JFET
B)DtypeMOSFET
C)EtypeMOSFET
D)Noneoftheabove
24. rd changes from one operation region to another with _____ values
typicallyoccurringat_____levelsofVGS(closertozero).
A)lower,lower
B)lower,higher
C)higher,lower
D)Noneoftheabove
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25.The_____doesnotsupportShockley'sequation.
A)JFET
B)DtypeMOSFET
C)EtypeMOSFET
D)Noneoftheabove
Check your work.

AnswerinFieldEffectTransistorAmplifiers
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25/07/2016

MCQs in Field Effect Transistor Amplifiers

Online Questions and Answers Topic Outline

Practice Exam Test Questions

8. Referring to the transfer characteristics shown below, calculate

27. Referring to this figure, calculate Zi for yos = 20 S. Assume VGSQ =

2. The depletion MOSFET circuit has a _____ input impedance than a

14. _____ is the networkinput impedance for a JFET fixedbias

Check your work.

Complete List of Chapter Quiz in Electronic

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