Physica E 56 (2014) 288295

Contents lists available at ScienceDirect

Physica E
journal homepage: www.elsevier.com/locate/physe

Improvement of photoresponse properties of NiO/p-Si photodiodes

by copper dopant
R.K. Gupta a,n,1, A.A. Hendi b, M. Cavas c, Ahmed A. Al-Ghamdi d, Omar A. Al-Hartomy d,e,
R.H. Aloraini b, F. El-Tantawy f, F. Yakuphanoglu d,g,n
a

Department of Chemistry, Pittsburg State University, Pittsburg, KS 66762, USA

Physics Department, Sciences Faculty for Girls, King Abdulaziz University, Jeddah, Saudi Arabia
c
Maden Higher Vocational School, Firat University, Elaz, Turkey
d
Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia
e
Department of Physics, Faculty of Science, Tabuk University, Tabuk 71491, Saudi Arabia
f
Department of Physics, Faculty of Science, Suez Canal University, Ismailia, Egypt
g
Department of Physics, Faculty of Science, Firat University, Elazig 23169, Turkey
b

H I G H L I G H T S

Solgel spin coating technique was used to fabricate undoped and Cu doped NiO lms.
The optical band gap value of the NiO lms was decreased with increase in Cu doping level.
The optimum Cu dopant content for NiO is 0.2% for the improved photoresponse characteristics of the diode.
The transient current measurement indicated that the lms could be used as a photosensor.

art ic l e i nf o

a b s t r a c t

Article history:
Received 12 July 2013
Received in revised form
10 September 2013
Accepted 27 September 2013
Available online 12 October 2013

Solgel spin coating technique was used to fabricate undoped and Cu doped NiO lms. The effects of Cu
doping on the optical properties of NiO lms were investigated. The optical band gap value of the NiO
lms was decreased with increase in Cu doping level. The band gap values for 0.1 at%, 0.2 at%, 1.0 at%, and
2.0 at% Cu doped NiO lms were 3.74 eV, 3.69 eV, 3.68 eV, and 3.67 eV, respectively. The junction and
photoconducting properties of the Al/CuNiO/p-Si/Al device were studied that Ion/Ioff value of the Al/Cu
NiO/p-Si/Al device rstly increases with increase in Cu doping level up to 0.2% of Cu and then decreases
with further increase in the Cu doping level. The transient photocurrent measurement indicated that
photocurrent under illumination was higher than the dark current and transient photocurrent increases
with increase in light intensity. The CV characteristics of the diode were also investigated at different
frequencies. The observed behavior of the diodes was explained on the basis of the interface states.
& 2013 Elsevier B.V. All rights reserved.

Keywords:
NiO
Cu doped NiO
Band gap
Schottky diode
Solgel

1. Introduction
Nickel oxide (NiO) is a transition metal oxide having with a
wide band gap in the range from 3.6 to 4.0 eV [1]. NiO is a p-type
of semiconductor and is a promising candidature for many
applications such as lithium ion batteries [2], solar cells [3],
antiferromagentic layer [4], electrochemical capacitors [5], chemical sensors [6], and electrochromic coatings [7]. Stoichiometric
NiO at room temperature is an insulator with a resistivity of
n

Corresponding authors.
E-mail addresses: ramguptamsu@gmail.com (R.K. Gupta),
fyhanoglu@rat.edu.tr (F. Yakuphanoglu).
1
Tel.: 1 6202354763
1386-9477/$ - see front matter & 2013 Elsevier B.V. All rights reserved.
http://dx.doi.org/10.1016/j.physe.2013.09.014

1013 cm [8]. The electrical conductivity of NiO can be manipulated by changing the concentration of Ni ion during doping. Guo
et al. [9] have studied the effect of Li ion doping on the electrical
properties of NiO lm. It was observed that the resistivity
decreased to 1.33 k cm at 0.11 mol%, which was one order of
magnitude lower than that of the undoped NiO lm.
Thin lms of NiO were prepared by physical and chemical
deposition techniques, such as, DC and RF sputtering [10,11],
pulsed laser deposition [12], electrochemical deposition [13],
chemical vapor deposition [14], solgel [15], and spray pyrolysis
[16]. Among these techniques, solgel method has many advantages such as low temperature processing, low cost, and easy
technology [17]. Zhao et al. [12] have studied the effects of Cu
content on the morphology, structure, optical and electrochromic

R.K. Gupta et al. / Physica E 56 (2014) 288295

properties of NiO lms. It was observed that Cu doping reduces the

response time for both the coloring and bleaching states, and the
reversibility of the redox reaction was increased as well. The effect
of W doping on the resistance switching behavior of NiOx lms
were studied [9]. It was reported that the resistive switching
behavior of NiOx can be enhanced by doping NiOx with W of
different oxidation valence. The effect of Li doping of the properties of NiO lm was investigated [15]. Hot point probe results
showed that all deposited lms have a p-type semiconductor
behavior. It was observed that the electrical resistivity decreases
from 106 cm for the non-doped lms up to 102 cm for the
lms prepared with the highest doping concentration, indicating
that the doping action of lithium is carried out.
In this work, we have fabricated thin lms of undoped and Cu
doped NiO using solgel technique. The effects of Cu doping on
structural and optical properties of the NiO lms were studied. The
junction properties of pure and Cu doped NiO with p-Si were
investigated in detail.

2. Experimental details
NiO and Cu doped NiO thin lms were fabricated using solgel
spin coating method. The required chemicals for the synthesis
were of analytical grade and used without further purication.
Nickel acetate, copper acetate, 2-metoxyethanol, and ethanolamine were used for fabrication of the lms. In typical synthesis,
0.5 M of nickel acetate was slowly dissolved in 2-metoxyethanol
followed by addition of ethanolamine. The molar ratio of ethanolamine to nickel acetate was 1.0. For copper doped NiO, the
required amount of copper acetate in atomic percentages (at)
was added in the above mixture to get 0.1 at%, 0.2 at%, 1.0 at% and
2.0 at% of copper doped NiO. The prepared mixtures were stirred
using a magnetic stirrer at 60 1C for 30 min to obtain clear
homogeneous solution and then sol was kept for aging for 20 h
prior to lm deposition. The pure and copper doped NiO lms
were deposited on microscopy glasses for optical studies by sol
gel spin coating method and followed by heating at 150 1C for
10 min to evaporate the solvent and remove organic residuals. The
prepared undoped and copper doped NiO lms were annealed at
400 1C for 1 h in a furnace.
Prior to fabrication of the Schottky diode, the substrate (p-type
crystalline silicon wafer with 600 m in thickness, 510 cm
resistivity, and 1 1 1 orientation) was chemically etched by the
solution of HF for 1 min and then rinsed in re-distilled water using
an ultrasonic bath for 1015 min. Aluminum (Al) ohmic contact
was evaporated on back side of silicon by thermal evaporation
followed by a thermal treatment at 570 1C for 5 in N2 atmosphere.
The lm was deposited onto the front side of silicon wafer by spin
coating with a rotating speed of 2000 rpm for 20 s. After each
coating, the deposited sol was dried at 150 1C for 10 min to obtain
solid lm. The coating procedure was repeated for 5 times. After
coating of the lms, a circular top contact (contact area 3.14 cm2)
was made by evaporating aluminum using physical mask.
Surface morphology was investigated using a PARK system XE
100E atomic force microscopy (AFM). The transmittance and
absorbance properties of the lms were taken using a Shimadzu
UVvis-NIR 3600 spectrophotometer. The electrical characterization of the diode was done using 4200 Keithley semiconductor
characterization system. Photovoltaic measurements were
executed using a 200 W halogen lamp. The light intensity of the
halogen lamp was measured using a solar power meter (TM-206).
The transient photoconductivity measurements were performed
using Keithley 6517 A electrometer.

289

3. Results and discussion

3.1. Structural properties of the lms
The surface morphology and grain size analysis of the NiO and
Cu-doped NiO was performed using atomic force microscopy.
The AFM images of the lms are given in Fig. 1. The images were
taken under different magnication to have better view of the
surfaces. The surface roughness values for NiO, 0.1% Cu doped NiO,
0.2% Cu doped NiO, 1% Cu doped NiO, and 2% Cu doped NiO were
observed to be 18.37 nm, 10.63 nm, 20.13 nm, 20.65 nm, and
34.75 nm, respectively. The surface roughness of the lms is
increased with increasing dopant content.
3.2. Optical properties of the lms
The optical property of the lms is a very important parameter
to study for fabrication of any photodiode. The optical properties
and thus the band gap of the lms could affect the electrical
properties of the photodiodes. The optical properties of pure NiO
and Cu doped NiO lms were studied in the UVvisible region
of the solar spectrum. Fig. 2 shows the optical properties of
the various lms in the range of 3501200 nm. The inset of
Fig. 2a and b shows the zoomed gure for more clarity. As seen
in the optical transmittance spectra (Fig. 2a) of the lms, the
optical transparency of the NiO lm depends on the doping level
of Cu. The optical transmittance of the NiO rst decreases with
increasing the Cu doping level up to 0.2% and then increases with
further increase in the Cu doping level. The initial decrease in the
optical transmittance of the NiO lm could be due to increased
absorption by free carriers [18]. Whereas, the increase in the
optical transmittance of the lms could be due to change in the
grain size of the lms. Since optical transmittance/absorption of
the lms affects the band gap of the lms. It would be interesting
to study the effect of transmittance on the optical band gap of
the lms.
The band gap of the NiO and Cu doped NiO lms were
calculated using the fundamental absorption edge of the lms.
The fundamental absorption of the lms corresponds to electron
excitation from the valence band to the conduction band [19]. The
absorption coefcient of the lm () and the incident photon
energy of the solar spectrum h are related by the equation [20]
h1=n Ah  Eg

where A is a constant, Eg is the band gap of the lm and the

exponent n depends on the type of transition. For allowed
transition n 1/2 [21]. Using the above equation, the band gap of
the lms could be calculated. The band gap of the NiO and Cu
doped NiO lms was estimated from the plot (h)2 vs. h, and by
extrapolation the linear portion of the curves until they intercept
the photon energy axis. The optical band gap of pure NiO lm was
calculated to be 3.69 eV. As seen in Fig. 2c, the optical band gap of
Cu doped NiO lms decreases with increase in the Cu doping level
in the NiO. The band gap values of 0.1%, 0.2%, 1%, and 2% Cu doped
NiO lms are 3.74 eV, 3.69 eV, 3.68 eV, and 3.67 eV, respectively.
The decrease in the band gap due to copper doping in NiO lm
could be due to formation of some additional energy levels in the
NiO close to the valence band edge, which results in the reduction
of the energy associated with the transition from valence band to
conduction band. Das et al. [22] have reported an increase in the
optical band gap from 3.66 eV to 3.81 eV corresponding to
undoped and 10% P doped NiO thin lms. The band gap of
thermally evaporated NiO lm was reported to 3.3 eV [23]. Nel
et al. [24] have studied the effect of oxidation on the band gap of
the NiO lms and observed that the band gap of NiO (3.4 eV)
increased after oxidation.

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R.K. Gupta et al. / Physica E 56 (2014) 288295

Fig. 1. AFM images of undoped NiO (a), 0.1% Cu doped NiO (b), 0.2% Cu doped NiO (c), 1.0% Cu doped NiO (d), and 2% Cu doped NiO (e) lms.

3.3. Junction properties of the diodes

The diode characteristics of the fabricated Al/NiO/p-Si/Al and
Al/CuNiO/p-Si/Al device were studied under dark and various
light illuminations. As evident from Fig. 3, the device shows
rectication behavior. It is further noted that the reverse bias
current density increases with increase in light intensity. The
current-voltage (IV) characteristics having rectication behavior

can be investigated using thermionic emission model [25]. According

to thermionic emission model, the IV characteristics of a diode can
be expressed as



qV  IRS
I I 0 exp
2
nkT
where V is the applied voltage, q is the electronic charge, n is the
ideality factor, k is the Boltzmann constant, T is the temperature, RS is

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291

Fig. 2. Transmittance vs. wavelength (a), absorbance vs. wavelength (b), and (h) vs. h plots (c) for undoped NiO and Cu doped NiO lms.

Fig. 3. IV characteristics of (a) Al/NiOp-Si/Al and (b) Al/0.2% CuNiOp-Si/Al diode under dark and light of various intensities.

the series resistance, and I0 is the reverse saturation current.

The reverse saturation current I0 can be expressed as [26]



 qfb
3
I 0 AAn T 2 exp
kT
where A is the active device area, An is the effective Richardson
constant (equal to 32 A/cm2 K2 for p-type silicon) and b is the barrier
height [27]. The ideality factor is determined from the slope of the
linear region of forward bias ln IV plot. The barrier height of the
device is calculated using Eq. (2). The ideality factor and barrier height
of the diode were determined to be 1.49 eV and 0.54 eV, respectively.
The higher value of ideality factor, compare to ideal value of 1, shows

that the diode exhibit a non-linear behavior. The higher value of the
ideality factor shows the presence of inhomogenities of Schottky
barrier height and existence of interface states, oxide layer on silicon
wafer and series resistance [28]. The IV characteristics of the Cu
doped NiO devices show very similar characteristics to the undoped
NiO based diode. Fig. 3b shows the IV characteristics of Al/0.2%Cu
NiO/p-Si/Al as a representative plot.
As seen in Fig. 3, the IV characteristics of the device show that
the reverse current increases with increasing light illumination
intensity. Fig. 4 shows the variation of photocurrent with light
intensity for Al/NiO/p-Si/Al as a representative plot. All the other
devices having different Cu doping level show similar nature.

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R.K. Gupta et al. / Physica E 56 (2014) 288295

The photocurrent nature of the diode was analyzed by the following

relation [29]
I ph AP m

where Iph is the photocurrent, A is a constant, m is an exponent and P

is the light intensity. The value of m was determined from the slope

Fig. 4. Variation of Iph with light intensity (P) for Al/NiO/p-Si/Al diode.

of log(Iph) vs. log(P) plot and was found to be 0.52. The obtained m
value between 0.5 and 1 suggests the presence of continuous
distribution of trap levels [30]. To better understand the effect of
Cu doping on the diode characteristics of the devices, the transient
photocurrent measurements of the diode were performed under
various light intensities. Fig. 5a and b shows the transient photocurrent measurements of Al/NiO/p-Si/Al and Al/0.2% CuNiO/p-Si/Al
device. As evident from these gures, the photocurrent of the diodes
increases after illuminating the device and return to initial value of
current after turning off the illumination. The initial rise in the
current indicates more generation of free charge carriers on illuminating the device. The decay of the photocurrent after turning off the
illumination is due to trapping of the charge carriers in the deep
levels. Clearly, this suggests that the fabricated devices exhibit a
photoconducting behavior and could be used as photo-sensor. Fig. 5c
shows the variation of Ion/Ioff of the Al/Cu-NiO/p-Si/Al device vs. Cu
doping level in NiO. As seen in the gure, the Ion/Ioff of the Al/Cu-NiO/
p-Si/Al device rstly increases with increase in Cu doping level up
to 0.2 at% of Cu and then decreases with further increase in the
Cu doping level. These results indicate that the optimum Cu dopant
content for NiO is 0.2% for the improved photoresponse characteristics.
The capacitance of the devices as a function of voltage and
frequency were studied to further characterize the junction properties. Fig. 6 shows the forward and reverse bias CV characteristics
of the Al/NiO/p-Si/Al and Al/0.2%CuNiO/p-Si/Al diode at various
frequencies. As seen in Fig. 6, in general, the capacitance of the diode

Fig. 5. Transient current for (a) Al/NiOp-Si/Al diode and (b) Al/0.2%CuNiOp-Si/Al diode (c) Variation of Ion/Ioff of the Al/CuNiO/p-Si/Al device vs. Cu doping level (dotted
line is guide to eyes).

R.K. Gupta et al. / Physica E 56 (2014) 288295

293

Fig. 6. CV characteristics of (a) Al/NiOp-Si/Al and (b) Al/0.2% CuNiOp-Si/Al diode under different frequencies.

Fig. 7. GV characteristics of (a) Al/NiOp-Si/Al and (b) Al/0.2% CuNiOp-Si/Al diode under different frequencies.

decreases with increase in applied frequency. The decrease in the

capacitance of the device at low frequencies depends on the ability of
the electron concentration to follow the applied alternating current
(AC) signal. If the CV measurement carries out at sufciently high
frequencies, the charge at the interface cannot follow an AC signal
[31]. On the other hand, conductance of the diodes increases with
increase in the frequency in the reverse bias voltage (Fig. 7). It is
further noted that the conductance of the lm is independence of the
frequency in the forward bias voltage. As the fabricated diode is a
non-ideal diode, we further investigated the effect of series resistance
on the capacitance and conductance. The corrected capacitance (CADJ)
and corrected conductance (GADJ) of the devices were calculated
using the following equations [32,33]
C ADJ

GADJ

G2m C m 2 C m
a2 C m 2
G2m C m 2 a
a2 C m 2

where
a Gm  G2m C m 2 RS

where CADJ and GADJ are series resistance compensated capacitance

and conductance, respectively. CADJV and GADJV plots as a function
of frequencies are shown in Figs. 8 and 9, respectively. In interesting
feature in GADJV plots was observed. We observe a peak in GADJV
plots which could be due to the presence of interface [15]. It is
further noted that the peak position moves towards lower negative

voltage with increase in the frequency and intensity of the peak

increases with increase in the frequency. This behavior indicates that
the interface states can follow the AC signal. The deviation from the
ideal behavior of the diode could be due to presence of series
resistance across the junction. The series resistance of the diode
can be estimated using the following expression
RS

Gm =C m 2
1 Gm =C m 2

Gm

Fig. 10 shows the variations of RS with applied bias voltage at

different frequencies. As seen in Fig. 10, the series resistance depends
on the bias voltage as well as on the applied frequency. It is further
noted that the series resistance is higher at lower frequency. This is
because the interface states can follow the AC signal and yield an
excess capacitance at low frequency. Whereas at higher frequencies,
the low series resistance is due to the fact that the interface states
cannot follow the AC signal and do not make a contribution to
interface states [34]. Another interesting feature in RSVf plot is
observed. The RSV plots have a peak and the peak position shifts
towards lower positive bias voltage with increase in frequency. It is
also noted that the peaks intensity decreases with increasing
frequency. This behavior indicates that the interface states changes
with frequency. The density of interface states (Dit) can be calculated
by the following relation [35],
2
3

2 4
Gmax =
h
i5
Dit
qA
Gmax =C ox 2 1  C m =C ox 2

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R.K. Gupta et al. / Physica E 56 (2014) 288295

Fig. 8. CADJV characteristics of (a) Al/NiOp-Si/Al and (b) Al/0.2% CuNiOp-Si/Al diode under different frequencies.

Fig. 9. GADJV characteristics of (a) Al/NiOp-Si/Al and (b) Al/0.2% CuNiOp-Si/Al diode under different frequencies.

Fig. 10. RSV characteristics of (a) Al/NiOp-Si/Al and (b) Al/0.2% CuNiOp-Si/Al diode under different frequencies.

where Cm is the measured capacitance, (Gmax =) is the measured

conductance, Cox is the capacitance of the insulating layer, A is the
area of the diode and is the angular frequency. As seen in Fig. 11,
the Dit values for the diode are decreasing with increasing frequency,
indicating that at low frequencies the interface states density
strongly depends on frequency.

4. Conclusions
Undoped and Cu doped NiO lms were deposited using solgel
spin coating method. Atomic force microscopy images conrm the
smoothness of the lms. The optical study showed that the band
gap of the NiO increased after Cu doping. The junction properties

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295

Fig. 11. DitF characteristics of (a) Al/NiOp-Si/Al and (b) Al/0.2% CuNiOp-Si/Al diode under different frequencies.

of the lms showed Schottky nature. The transient current

measurement indicated that the lms could be used as a photosensor. The variation in the capacitance and conductance with
frequency was explained on the basis of interface states density.
Acknowledgments
This study was supported by TABUK University under projects
No. S-01951434 and S-01961434. Authors thank to Tabuk University
for supporting. Also, this work was supported by Tunisian Ministry of
High Education. The authors gratefully acknowledge and thank the
Deanship of Scientic Research, King Abdulaziz University (KAU),
Jeddah, Saudi Arabia, for the research group Advances in composites,
Synthesis and applications. This work is as a result of international
collaboration of the group with Prof. F. Yakuphanoglu.
References
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]

H. Sato, T. Minami, S. Takata, T. Yamada, Thin Solid Films 236 (1993) 27.
T. Li, S. Ni, X. Lv, X. Yang, S. Duan, J. Alloys Compd. 553 (2013) 167.
J Bandara, H Weerasinghe, Sol. Energy Mater. Sol. Cells 85 (2005) 385.
S.S. Nkosi, B. Yalisi, D.E. Motaung, J. Keartland, E. Sideras-Haddad, A. Forbes,
B.W. Mwakikunga, Appl. Surf. Sci. 265 (2013) 860.
F. Zhang, Y. Zhou, H. Li, Mater. Chem. Phys. 83 (2004) 260.
Y. Du, W.N. Wang, X.W. Li, J. Zhao, J.M. Ma, Y.P. Liu, Mater. Lett. 68 (2012) 168.
K.K. Purushothaman, G. Muralidharan, Sol. Energy Mater. Sol. Cells 93 (2009)
1195.
W.L. Jang, Y.M. Lu, W.S. Hwang, W.C. Chen, J. Eur. Ceram. Soc. 30 (2010) 503.
Wen Guo, K.N. Hui, K.S. Hui, Mater. Lett. 92 (2013) 291.
J. Kim, H. Na, S. Lee, Y.H. Sung, J.H. Yoo, D.S. Lee, D.H. Ko, H. Sohn, Curr. Appl.
Phys. 11 (2011) e70.

[11] S. Nandy, S. Goswami, K.K. Chattopadhyay, Appl. Surf. Sci. 256 (2010) 3142.
[12] R.K. Gupta, K. Ghosh, P.K. Kahol, Physica E 41 (2009) 617.
[13] L. Zhao, G. Su, W. Liu, L. Cao, J. Wang, Z. Dong, M. Song, Appl. Surf. Sci. 257
(2011) 3974.
[14] H. Wang, G. Wu, X.P. Cai, Y. Zhao, Z.F. Shi, J. Wang, X.C. Xia, X. Dong, B.L. Zhang,
Y. Ma, G.T. Du, Vacuum 86 (2012) 2044.
[15] A.A. Al-Ghamdi, W.E. Mahmoud, S.J. Yaghmour, F.M. Al-Marzouki, J. Alloys
Compd. 486 (2009) 9.
[16] I.A. Garduno, J.C. Alonso, M. Bizarro, R. Ortega, L Rodrguez-Fernandez, A. Ortiz,
J. Cryst. Growth 312 (2010) 3276.
[17] F. Yakuphanoglu, J. Alloys Compd. 507 (2010) 184.
[18] X. Wu, T.J. Coutts, W.P. Mulligan, J. Vac. Sci. Technol., A 15 (1997) 1057.
[19] J.C. Manifacier, M. De Murcia, J.P. Fillard, E. Vicario, Thin Solid Films 41 (1977)
127.
[20] V.R. Shinde, T.P. Gujar, C.D. Lokhande, R.S. Mane, S.H. Han, Mater. Chem. Phys.
96 (2006) 326.
[21] J.S. Cruz, G.T. Delgado, R.C. Perez, C.I.Z. Romero, O.Z. Angel, Thin Solid Films
515 (2007) 5381.
[22] N.S. Das, B. Saha, R. Thapa, G.C. Das, K.K. Chattopadhyay, Physica E 42 (2010)
1377.
[23] Wenjuan Yu, Liang Shen, Shengping Ruan, Fanxu Meng, Jialue Wang,
Enrui Zhang, Weiyou Chen, Sol. Energy Mater. Sol. Cells 98 (2012) 212.
[24] J.M. Nel, F.D. Auret, L. Wu, M.J. Legodi, W.E. Meyer, M. Hayes, Sens. Actuators, B
100 (2004) 270.
[25] S.M. Sze, Physics of Semiconductor Devices, Wiley, New York,, 1979.
[26] R.K. Gupta, R.A. Singh, Mater. Chem. Phys. 86 (2004) 279.
[27] S. Karatas, A. Turut, Nucl. Instrum. Methods Phys. Res., Sect. A 566 (2006) 584.
[28] F. Yakuphanoglu, Y. Caglar, M. Caglar, S. Ilican, Mater. Sci. Semicond. Proc. 13
(2010) 137.
[29] S Kazim, V. Alia, M Zulfequar, M. MazharulHaq, M. Husain, Physica B 393
(2007) 310.
[30] F. Yakuphanoglu, B.F. Senkal, Synth. Met. 159 (2009) 311.
[31] F. Yakuphanoglu, S. Okur, Microelectron. Eng. 87 (2010) 30.
[32] E.H. Nicollian, A. Goetzberger, Bell Syst. Technol. J. 46 (1967) 1055.
[33] I. Dokme, S. Altindal, T. Tunc, I. Uslu, Microelectron. Reliab. 50 (2010) 39.
[34] S. Karatas, A. Turut, Vacuum 74 (2004) 45.
[35] W.A. Hill, C.C. Coleman, Solid State Electron. 23 (1980) 987.