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EXPERIMENT-1

P-N JUNCTION DIODE CHARACTERISTICS

1. DIODE FORWARD CHARACTERISTIC


1.2mA

0.8mA

0.4mA

0A

0V

I(D11)

0.1V

0.2V

0.3V

0.4V

0.5V

0.6V

0.7V

0.8V

0.9V

1.0V

1.1V

1.2V

V1(D11)

KNEE VOLTAGE: 0.6 V

2. OPERATING POINT
Dc line equation: Id=(1-Vd)/1000
1.2m

0.8m

(792.079m,203.710u)

0.4m

0
0V

I(D11)

0.1V
0.2V
(1- V1(D11))/1000

0.3V

Quescent Condition:
Vf= .792 V
If= .2 mA

0.4V

0.5V

0.6V
V1(D11)

0.7V

0.8V

0.9V

1.0V

1.1V

1.2V

Dc line equation: Id = (5-Vd)/1000


6.0m

(923.745m,4.0593m)

4.0m

2.0m

0
0V

I(D11)

0.1V
0.2V
(5- V1(D11))/1000

0.3V

0.4V

0.5V

0.6V

0.7V

0.8V

0.9V

1.0V

V1(D11)

Quescent Condition:
Vf= .924 V
If= 4.06 mA
NOTE:
Operating point of diode changes as we change the supply voltage
3. DIODE DC RESISTANCE
Dc resistance is calculated at the operating condition.
Quescent Condition:
Vf = .792 V
If= .2 mA
Rdc= Vf/If =.792/.2 K Ohm = 3.96 K Ohm
Quescent Condition:
Vf= .924 V
If= 4.06 mA
Rdc= Vf/If =.924/4.06 K Ohm = .228 K Ohm = 228 Ohm
NOTE:
Dc resistance is a function of forward current of diode. It is inversely
proportional to If.

4. DIODE DYNAMIC RESISTANCE


for Quescent Condition:
Vf = .792 V
If= .2 mA

1.1V

1.2V

1.2m

0.8m

0.4m

0
0V

I(D11)

0.1V
0.2V
(1-V1(D11))/1000

0.3V

0.4V

0.5V

0.6V

0.7V

0.8V

0.9V

1.0V

1.1V

1.2V

0.9V

1.0V

1.1V

1.2V

V1(D11)

Dynamic resistance = 11.881/62.693 K Ohm = 189.5 Ohm

For Quescent Condition:


Vf= .924 V
If= 4.06 mA
6.0m

4.0m

2.0m

0
0V

I(D11)

0.1V
0.2V
(5-V1(D11))/1000

0.3V

0.4V

0.5V

0.6V

0.7V

0.8V

V1(D11)

Dynamic resistance = 11.872/1.2951 Ohm = 9 Ohm


NOTE:
Dynamic resistance is also a function of current. We have calculated it at the
operating point. It varies inversely with current.
5. COMPARISION OF DC AND DYNAMIC RESISTANCE

600M

400M
DC RESISTANCE

DYNAMIC RESISTANCE
200M

0
0V

0.1V
V1(D11) / I(D11)

0.2V
0.3V
D(V1(D11)) / D(I(D11))

0.4V

0.5V

0.6V

0.7V

0.8V

0.9V

1.0V

1.1V

1.2V

V1(D11)

From the plot it is clear that both dc as well as dynamic resistance decreases
with increase in current but at each point dc resistance is higher than dynamic
resistance.

DISCUSSION QUESTIONS:
1. Replace the diode with D1N4002, D1N4148, and D1N750. Compare the characteristics
and resistance values in a tabular form.
As per the given circuit condition in the question:
DIODE

KNEE
VOLTAGE
(in Volt)

Vf
(in Volt)

If
(in
mAmp)

D1N914
D1N4002
D1N4148
D1N750(ZENE
R)

.6
.35
.4
.47

.792
.534
.564
.661

.2
.466
.426
.334

DC
RESISTAN
CE
(in K
Ohm)
3.96
1.14
1.32
1.98

DYNAMIC
RESISTANCE (in
Ohm)
189.5
100
96.9
11.8

2. What conclusions can be drawn from the comparison of simulation of


characteristics of diode?
1. All are having knee voltage near about .7 volt and hence ALL ARE SILICON
DIODES
2. We can see that D1N4002 has HIGH FORWARD CURRENT and LOW FORWARD
VOLTAGE among all
3. For a particular current dc resistance is always greater than ac resistance.
4. For different diode the operating voltage and current are different. The ac
resistance is also different in each case. So we can choose a particular diode
according to our requirement and fix the value of other components like resistors
and voltage source.
NOTE:
1. Germanium Signal Diodes These have a low reverse resistance value giving a lower forward
volt drop across the junction, typically only about 0.2-0.3v, but have a higher forward resistance value
because of their small junction area.
2. Silicon Signal Diodes These have a very high value of reverse resistance and give a forward volt
drop of about 0.6-0.7v across the junction. They have fairly low values of forward resistance giving
them high peak values of forward current and reverse voltage.

3. Why the values of DC resistance, Dynamic resistance and average AC


resistance are different for different type of diode?
For different diodes the doping is different and hence the behaviour of the
depletion region under same operating condition is different.
So it leads to different value for the said characteristics
NOTE:
DC RESISTANCE- Resistace at the operating point.
AC OR DYNAMIC RESISTANCE- Resistace to change in state (V,I)
4. Specify the application for each diode used in the simulation.

DIODE
D1N914

D1N4002

D1N4148

D1N750

FEATURES
MAXIMUM
SWITCHING
TIME=4nS
LOW Vf, HIGH If,
LOW LEAKAGE
CURRENT AND HIGH
PIV AND HIGH
SURGE CURRENT
ELECTRICAL
EQUIVALENT OF
D1N914 WITH
SWITCHING
TIME=4nS
ZENER DIODE,
Vz=4.7V

APPLICATION
BLOCKING DIODE,SMALL
SIGNAL FAST SWITCHING
RECTIFICATION
INVERTERS,CONVERTES AND
FREE WHEELING

SMALL SIGNAL FAST


SWITCHING PURPOSE IN
RADIO, TV AND DIGITAL
CIRCUITS
VOLTAGE REGULATION

5. Study the output of following diode limiter circuit. Discuss the outcome. Determine V0 as

Vin is varied from -5 to +5 V. The two diodes are identical.

4.0V
D1 ON AND D2 OFF

B
2.0V

0V
D2 ON AND D1 OFF

-2.0V
-5.0V
V(V0)

A
-4.0V

-3.0V

-2.0V

-1.0V

0.0V

1.0V

2.0V

3.0V

4.0V

5.0V

V_Vin

WHHEN Vin < -1.7V


D1 is reverse biased and D2 is forward biased. So D1 behaves as an open switch
and D2 as a closed switch. So the output voltage is clamped to -1.6 volt.
WHHEN Vin > 2.7V
D2 is reverse biased and D1 is forward biased. So D2 behaves as an open switch
and D1 as a closed switch. So the output voltage is clamped to 2.6 volt.
WHHEN -1.7V < Vin < 2.7V (REGION IN BETWEEN A AND B IN THE GRAPH)
Both D1 and D2 are reversed biased and behave as open switches. So the output
is just the same as the input.
NOTE:
Here a little discrepancy is coming to picture as the diode carries very less
current in nano or micro amp when it is reverse biased also.

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