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Lecture 4
Photolithography
Key Topics:
Photo =
Litho =
Graphy =
Minimum Feature
Resolution
Depth of Focus
Overlay Errors
Photoresist Response
E-beam and EUV lithography
Professor N. Cheung, U.C. Berkeley
s = (through) light
s = stone
= writing
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Lecture 4
Slow
several nm resolution
Professor N. Cheung, U.C. Berkeley
High throughput
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Contact Printing
hv
Photo
Mask
Plate
photoresist
wafer
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Proximity Printing
hv
Photoresist
g~20m
wafer
exposed
R = k ( g ) 1/2
~ 1 m for visible photons,
much smaller for X-ray lithography
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Projection Printing
hv
De-Magnification: nX
10X stepper
4X stepper
1X stepper
lens
focal plane
P.R.
wafer
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Lecture 4
Photon sources
Hg Arc lam ps 436(G -line), 405(H -line), 365(I-line) nm
Excim er lasers: KrF (248nm ) and ArF (193nm )
Laser pulsed plasm a (13nm , EUV)
Source M onitoring
Filters can be used to lim it exposure wavelengths
Intensity uniform ity has to be better than several % over the collection area
Needs spectral exposure m eter for routine calibration due to aging
Professor N. Cheung, U.C. Berkeley
EE143 F2010
Lecture 4
EE143 F2010
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Optical Stepper
field size increases
with future ICs
scribe line
2
wafer
Image
field
Translational
motion
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Qualitative Explanation
of image degradation by lens
+
Mask
lens
wafer
plane
+1
0
-1
parallel
optical
beam
P
Professor N. Cheung, U.C. Berkeley
P sin n
n 0, 1, 2,...
sin = NA of lens
P=L+S
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Mask Intensity
Imax
O
Image on wafer
x
After optical system
Imax
O
Professor N. Cheung, U.C. Berkeley
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Why
lm
NA
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point
best
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No defocus
Note degradation of
image contrast
and image slope
Defocus increases
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Field
Oxide
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Small P features
For Reference only
Best focus
Extreme Defocus
Professor N. Cheung, U.C. Berkeley
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Photomask Pattern