Analog IC Design Lab

16MVD0070

TASK 1:

Study of DC and Small Signal models of a MOS

Transistor

AIM:

1) To Study the DC characteristics of MOS transistor

A) Transfer characteristics (Id vs Vgs)
B) Drain characteristics (Id vs Vds)
C) Transfer conductance (gm vs Vgs)
D) Rout
2) Vds(sat) for diff. vgs
3) To plot the Id vs Vgs curves as a function of VSB and calculate the
threshold voltage and Body effect ()
4) To plot the Id vs Vds curves as Vgs constant and calculate the channel
length modulation coefficient ()

Tools: Cadence Virtuoso

CIRCUIT DIAGRAM:

Schematic for plotting Id vs Vds characteristics for NMOS:

Analog IC Design Lab

16MVD0070

Schematic for plotting Id vs Vgs characteristics for PMOS:

Schematic used for finding the Body effect OF NMOS:

Analog IC Design Lab

16MVD0070

Schematic used for finding the Body effect OF PMOS:

Analog IC Design Lab

16MVD0070

Data analysis and Results:

1) The plot of Transfer characteristic (Id vs Vgs) and

The plot of Drain characteristic (Id vs Vds) is obtained as below:
NMOS:
A)Id vs
Vgs

B)Id vs
Vds:

Analog IC Design Lab

16MVD0070

PMOS:
a)Id vs Vgs

b)Id vs Vds:

Analog IC Design Lab

16MVD0070

b)TRANSFER CONDUCTANCE VS VGS(gm vs vgs):

For calculating gm:
gm=ID/VGS
NMOS:

Analog IC Design Lab

16MVD0070

PMOS:

d)ro vs vds:
For calculating ro :
ro=1/(Id/vds)
NMOS:

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16MVD0070

PMOS:

2.VDS(sat) for diff Vgs:

NMOS:

Analog IC Design Lab

16MVD0070

PMOS:

3. Calculation of Threshold voltage for diff. values of Vsb:

Selected NMOS transistor:-gpkd090_nmos1v
Width:120nm,Length:100nm
Vds:1v ,Vgs:1v
Vsb:Variable (0 to -1v)
Selected PMOS transistor:-gpkd090_pmos1v
Width:120nm,Length:100nm
Vds: -1v ,Vgs: -1v
Vsb:Variable (0-1v)

Analog IC Design Lab

16MVD0070

The plot of Id vs Vgs function of VSB is as below for NMOS:

VSB
0
-1

VGS
170mv(vto)
190mv(vt)

By using the formula :

VT=VTO+[-]
Vsb=1v ,2f=1 then =48.28m(VOLT)1/2

The plot of Id vs Vgs function of VSB is as below for PMOS:

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Analog IC Design Lab

16MVD0070

VSB
0
1

VGS
-290mv(vto)
-370mv(vt)

By using the formula :

VT=VTO+[-]
Vsb=1v ,2f=1 then =-193m(VOLT)1/2

4. Channel Length Modulation Co-efficient():

Channel length modulation coefficient of nmos is given by following relation
Id=(1/2)ncox(vgs-vth)2(1+vds)
By using the Drain characteristic(ID vs VDS)
ID1=73.01A & Vds1=696.16mv
ID2=76.76A & Vds2=831.7mv
By putting above values of Id vs Vds in below equation find out value of

Then = 0.515/volt for NMOS

Channel length modulation coefficient of pmos is given by following relation
Id=(1/2)ncox(vgs-vth)2(1+vds)
ID1=-27.25A & Vds1=-456.04mv
ID2=-15.84A & Vds2=-179.73mv
By putting above values of Id vs Vds in below equation find out value of

Then = 0.0049/volt PMOS

The value of channel length modulation co-efficient of NMOS is 0.515/VOLT
Pmos is 0.0049 /VOLT

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Analog IC Design Lab

16MVD0070

CONCLUSION:
1. The input characteristics (Id vs Vgs) of NMOS and PMOS was plotted and
calculated threshold voltage for nmos :170mv,Pmos:-290mv
2. BY varying Vsb values 0 to 1,calculated Body effect coefficient for
nmos:48.28m(VOLT)1/2 Pmos:-193m(VOLT)1/2
3. We get channel length modulation co-efficient value for
nmos:0.515/volt , Pmos:0.0049/volt
4. When the applied Vgs is below the threshold voltage no ID flows.Hence
studied the DC characteristic of NMOS and Pmos transistor

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