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Supporting Information

Excellent Quality White Light Emitting Diode by


Liquid type Nontoxicity Photoluminescent Nanomaterials
Huang-Yu Lin, Chang-Ching Tu,, Liang-Che Chen, , # Chien-Chung Lin,,* Xin Yin Chen,
Hsien-Hao Tu, Chin-Wei Sher, Hsisheng Teng, # Huang-Ming Philip Chen, Teng-Ming Chen,

Lih Y. Lin, and Hao-Chung Kuo,*

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung


University, Hsinchu, Taiwan
#

Department of Chemical Engineering National Cheng Kung University Tainan, Taiwan

Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan

Institute of Photonic System, National Chiao Tung University, Tainan, Taiwan

Department of Electrical Engineering, University of Washington, Seattle, WA, 98195, USA

To whom correspondence should be addressed: (H.C. Kuo) hckuo@faculty.nctu.edu.tw; (C.C.

Lin) chienchunglin@faculty.nctu.edu.tw.

These authors contribute equally

Figure S1. The atomic force microscopy (AFM) image of the nitride doped graphene oxide QDs:
(a)GQD1, (b)GQD2, (c)GQD3 which is with the roughness deviation from 1nm to 2nm. The information
of the height for graphene QDs indicates that most of the nano particles are monolayer or bilayer.1-2 (d)
The topographic features of porous silicon (PS) QD is from 40nm to 70nm indicates that the multilayer
composite structure.

Figure S2. The CRI correlation illustration indicates the various Munsell codes for the liquid type and
dispensing white LED samples. The excellent value of the R9 for the liquid type GQDs and PS QDs
component LEDs has been achieved to 88, and also obtained the high CRI of about 95.

Dispensing
GQD
Dispensing
GQD/PQD
Liquid
GQD
Liquid
GQD/PSQD
Dispensing
GQD
Dispensing
GQD/PSQD
Liquid
GQD
Liquid
GQD/PSQD

R1

R2

R3

R4

R5

R6

R7

R9

66.1

78.8

82.2

56.1

62.3

66.5

84.6

-3.4

76.5

82

93.2

71.6

71.2

70.5

92.4

35.6

74.9

83.1

94.3

80.3

77

81.2

89.7

-0.1

97.2

94.9

94.2

90.9

94.8

93.2

98.6

88.1

R10

R11

R12

R13

R14

R15

Ra

71.7

57.4

51.6

60.8

86.4

46.9

68.8

71

72.2

49.8

72

94.3

61.3

78.5

63.6

76.4

72.1

75.3

96.5

66.8

81.2

91.1

94.7

88.7

92

96

92.4

94.9

Table S1. The values of CRI No. 1 to No. 15 (R1-R15) and CRI of the dispensing and liquid type warm
white and neutral white QD LEDs.

The calculation of quantum efficiency

The PL quantum efficiency of graphene QD and porous silicon QD with the current driven are defined as
fluorescence quantum yield, which can be calculated and expressed by the formula S1 as below:

PL Quantum efficiency =
% &'

% &'

where #$ ( and #$)


/
 




/ 
 
!" 

!"


 



(1)

( is the integrated emission intensity in the visible band of the spectrum
%/) &'

% &'
(,( and #+

with and without the QDs, and #+

( is the integrated intensity which excited

by the 365 UV light with and without the QDs, respectively.3-4 Therefore, the photoluminescence
quantum yield has calculated of ratio of the visible photons and the UV photons and with the current
driven as shown in Figure S3.

Figure S3. (a)The PL quantum efficiency of the liquid type white LED and dispensing white LED
samples caculated by the equation (1).(b)The transmition spectrum of the glass

Supplemental Reference:

1. Zhu, S.; Tang, S.; Zhang, J.; Yang, B., Control the size and surface chemistry of graphene for the
rising fluorescent materials. Chem. Commun. 2012, 48 (38), 4527-4539.
2. Shen, J.; Zhu, Y.; Yang, X.; Li, C., Graphene quantum dots: emergent nanolights for bioimaging,
sensors, catalysis and photovoltaic devices. Chem. Commun. 2012, 48 (31), 3686-3699.
3. Suzuki, K.; Kobayashi, A.; Kaneko, S.; Takehira, K.; Yoshihara, T.; Ishida, H.; Shiina, Y.; Oishi, S.;
Tobita, S., Reevaluation of absolute luminescence quantum yields of standard solutions using a
spectrometer with an integrating sphere and a back-thinned CCD detector. PCCP 2009, 11 (42),
9850-9860.
4. Hsu, S.-C.; Chen, Y.-H.; Tu, Z.-Y.; Han, H.-V.; Lin, S.-L.; Chen, T.-M.; Kuo, H.-C.; Lin, C.-C.,
Highly Stable and Efficient Hybrid Quantum Dot Light-Emitting Diodes. Photonics Journal, IEEE
2015, 7 (5), 1-10.

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