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PD - 93907

IRF1407

AUTOMOTIVE MOSFET

HEXFET Power MOSFET

Typical Applications

Integrated Starter Alternator


42 Volts Automotive Electrical Systems

VDSS = 75V

Benefits

Advanced Process Technology


Ultra Low On-Resistance
Dynamic dv/dt Rating
175C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

RDS(on) = 0.0078

ID = 130AV

Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET Power MOSFETs utilizes the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175C junction
operating temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.

TO-220AB

Absolute Maximum Ratings


Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V


Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw

Max.

Units

130V
92V
520
330
2.2
20
390
See Fig.12a, 12b, 15, 16
4.6
-55 to + 175

A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )


10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.50

0.45

62

C/W

1
10/11/01

IRF1407
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Qgs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage


Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
75

2.0
74

Typ.

0.09

160
35
54
11
150
150
140

Max.

0.0078
4.0

20
250
200
-200
250
52
81

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss
Coss
Coss
Coss eff.

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance U

5600
890
190
5800
560
1100

V(BR)DSS
V(BR)DSS/TJ

IGSS

Units
V
V/C

V
S
A
nA

nC

ns

nH

pF

Conditions
VGS = 0V, ID = 250A
Reference to 25C, ID = 1mA
VGS = 10V, ID = 78A T
VDS = 10V, ID = 250A
VDS = 25V, ID = 78A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150C
VGS = 20V
VGS = -20V
ID = 78A
VDS = 60V
VGS = 10VT
VDD = 38V
ID = 78A
RG = 2.5
VGS = 10V T
D
Between lead,
6mm (0.25in.)
G
from package
and center of die contact
S
VGS = 0V
VDS = 25V
= 1.0KHz, See Fig. 5
VGS = 0V, VDS = 1.0V, = 1.0KHz
VGS = 0V, VDS = 60V, = 1.0KHz
VGS = 0V, VDS = 0V to 60V

Source-Drain Ratings and Characteristics


IS
ISM

VSD
trr
Qrr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Q
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
130V
showing the
A
G
integral reverse
520
S
p-n junction diode.
1.3
V
TJ = 25C, IS = 78A, VGS = 0VT
110 170
ns
TJ = 25C, IF = 78A
390 590
nC di/dt = 100A/s T
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Q Repetitive rating; pulse width limited by


max. junction temperature. (See fig. 11).
R Starting TJ = 25C, L = 0.13mH
RG = 25, IAS = 78A. (See Figure 12).
S ISD 78A, di/dt 320A/s, VDD V(BR)DSS,
TJ 175C
T Pulse width 400s; duty cycle 2%.

U Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
VCalculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
WLimited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.

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IRF1407
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

100

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP

ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

TOP

4.5V

10

100

4.5V

10

20s PULSE WIDTH


Tj = 25C

20s PULSE WIDTH


Tj = 175C

1
0.1

10

100

0.1

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000.00

3.0

5.0

7.0

9.0

11.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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13.0

2.0

(Normalized)

R DS(on) , Drain-to-Source On Resistance

ID , Drain-to-Source Current ( )

2.5

VDS = 15V
20s PULSE WIDTH
3.0

I D = 130A


TJ = 175C

100.00

10.00

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

T J = 25C

10

1.5

1.0

0.5

V GS = 10V


0.0
-60

-40

-20

20

40

60

80

TJ , Junction Temperature

100 120 140 160 180

( C)

Fig 4. Normalized On-Resistance


vs. Temperature

IRF1407
100000

15

VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd

C, Capacitance(pF)

V DS = 37V

VGS, Gate-to-Source Voltage (V)

Ciss

Coss

1000

Crss

V DS = 15V

100

10

100

1000.00

120

160

200

10000

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

80

Fig 6. Typical Gate Charge vs.


Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.


Drain-to-Source Voltage

100.00

40

QG , Total Gate Charge (nC)

VDS , Drain-to-Source Voltage (V)

TJ = 175C

OPERATION IN THIS AREA


LIMITED BY R DS (on)

1000

100

10.00
T J = 25C
1.00

100sec

10

1msec
Tc = 25C
Tj = 175C
Single Pulse

VGS = 0V

10msec

0.10
0.0

1.0

2.0

VSD , Source-toDrain Voltage (V)

Fig 7. Typical Source-Drain Diode


Forward Voltage

V DS = 60V

12

Coss = Cds + Cgd


10000

ID = 78A


3.0

10

100

1000

VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRF1407
140


LIMITED BY PACKAGE
120

VGS

D.U.T.

RG

100

I D , Drain Current (A)

RD

VDS

-VDD

80

10V
Pulse Width 1 s
Duty Factor 0.1 %

60

Fig 10a. Switching Time Test Circuit

40

VDS

20

90%
0
25

50

75

100

125

TC , Case Temperature

150

175

( C)

10%
VGS

Fig 9. Maximum Drain Current vs.


Case Temperature

td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

(Z thJC)

D = 0.50

0.1

0.20

Thermal Response

0.10
0.05
0.02
0.01


SINGLE PULSE
(THERMAL RESPONSE)

P DM

0.01

t1

t2


Notes:

1. Duty factor D =
2. Peak T

0.001
0.00001

0.0001

0.001

0.01

t1 / t

J = P DM x Z thJC

+T C

0.1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF1407

650

1 5V

ID

TOP

32A
55A

+
V
- DD

IA S
20V

0 .0 1

tp

Fig 12a. Unclamped Inductive Test Circuit


V (B R )D SS
tp

EAS , Single Pulse Avalanche Energy (mJ)

D .U .T

RG

520

D R IV E R

VDS

BOTTOM

78A

390

260

130

0
25

50

75

100

125

Starting T , Junction
Temperature
J

150

175

( C)

IAS

Fig 12c. Maximum Avalanche Energy


vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms


QG

10 V
QGD

3.5

VG

Charge

Fig 13a. Basic Gate Charge Waveform


Current Regulator
Same Type as D.U.T.

50K
12V

.2F
.3F

D.U.T.

+
V
- DS

VGS(th) Gate threshold Voltage (V)

QGS

3.0

ID = 250A
2.5

2.0

1.5
VGS

-75 -50 -25

25

50

75 100 125 150 175 200

T J , Temperature ( C )

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 14. Threshold Voltage vs. Temperature

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IRF1407
1000

Avalanche Current (A)

Duty Cycle = Single Pulse


Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25C due to
avalanche losses

0.01

100

0.05
0.10

10

1
1.0E-07

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

EAR , Avalanche Energy (mJ)

400

TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
300

200

100

0
25

50

75

100

125

150

Starting T J , Junction Temperature (C)

Fig 16. Maximum Avalanche Energy


vs. Temperature

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Notes on Repetitive Avalanche Curves , Figures 15, 16:


(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 15, 16).
t av = Average time in avalanche.
175
D = Duty cycle in avalanche = t av f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3BVIav) = T/ ZthJC
T/ [1.3BVZth]
Iav = 2
EAS (AR) = PD (ave)tav

IRF1407
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T*

Circuit Layout Considerations


Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

R
-

Q
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

RG
VGS

+
-

VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive


P.W.

Period

D=

P.W.
Period

[VGS=10V ] ***

D.U.T. ISD Waveform


Reverse
Recovery
Current

Body Diode Forward


Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

[VDD]

Forward Drop

Inductor Curent
Ripple 5%

[ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices


Fig 17. For N-channel HEXFET power MOSFETs

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IRF1407
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.1 13)
2.62 (.1 03)

10.54 ( .415 )
10.29 ( .405 )

-B -

3 .78 (.14 9)
3 .54 (.13 9)

4 .69 (.18 5)
4 .20 (.16 5)

-A -

1 .32 (.05 2)
1 .22 (.04 8)

6.47 (.2 55 )
6.10 (.2 40 )

4
1 5.24 ( .600 )
1 4.84 ( .584 )

L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - SOU RCE
4 - D R A IN

1.1 5 (.04 5)
M IN
1

1 4.09 (.5 55)


1 3.47 (.5 30)

4.0 6 (.160)
3.5 5 (.140)

3X
3X

1 .40 (.05 5)
1 .15 (.04 5)

0.93 ( .037 )
0.69 ( .027 )

0.3 6 ( .014 )

3X
M

B A M

0.5 5 (.022)
0.4 6 (.018)

2.92 ( .115 )
2.64 ( .104 )

2.54 (.1 00)


2X
N OTES:
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1 982.

3 O U TLIN E C O N F O R M S TO JE D E C O U TL IN E TO -220 A B .

2 C O N T R O L LIN G D IM E N S IO N : IN C H

4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU D E B U R R S .

TO-220AB Part Marking Information


EXAMPLE:

THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"

INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE

PART NUMBER

DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C

Data and specifications subject to change without notice.


This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/01

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/

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