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Product Summary
Features
V DS @ Tj,max
650
0.250
R DS(on),max@T j= 25C
Q g,typ
6.6
26
nC
PG-TO220 FP
Type
Package
Marking
IPA60R250CP
PG-TO220FP
6R250P
6R299P
Symbol Conditions
ID
Value
T C=25 C
12
T C=100 C
I D,pulse
T C=25 C
40
E AS
I D=5.2 A, V DD=50 V
345
E AR
I D=5.2 A, V DD=50 V
0.52
I AR
dv /dt
V GS
Power dissipation
P tot
T j, T stg
Mounting torque
Rev.2.1
Unit
A
mJ
5.2
V DS=0...480 V
50
V/ns
static
20
AC (f >1 Hz)
30
T C=25 C
33
M2.5 screws
page 1
50
Ncm
2012-01-09
IPA60R250CP
Maximum ratings, at T j=25 C, unless otherwise specified
Parameter
Symbol Conditions
IS
I S,pulse
dv /dt
Parameter
Symbol Conditions
Value
Unit
12
T C=25 C
40
15
V/ns
Values
Unit
min.
typ.
max.
3.75
Thermal characteristics
Thermal resistance, junction - case
R thJC
R thJA
leaded
80
Soldering temperature,
wavesoldering only allowed at leads
T sold
260
K/W
600
V GS(th)
2.5
3.5
I DSS
V DS=600 V, V GS=0 V,
T j=25 C
V DS=600 V, V GS=0 V,
T j=150 C
10
I GSS
V GS=20 V, V DS=0 V
100
nA
R DS(on)
V GS=10 V, I D=7.8 A,
T j=25 C
0.22
0.25
V GS=10 V, I D=7.8 A,
T j=150 C
0.59
1.3
Gate resistance
Rev.2.1
RG
page 2
2012-01-09
IPA60R250CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
1300
65
55
150
40
17
110
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
C o(er)
C o(tr)
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 480 V
pF
t d(on)
Rise time
tr
t d(off)
Fall time
tf
12
Q gs
Q gd
Qg
26
35
V plateau
0.9
1.2
330
ns
4.5
27
V DD=400 V,
V GS=10 V, I D=7.8 A,
R G=23.1
ns
V DD=400 V, I D=7.8 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
t rr
Q rr
I rrm
V GS=0 V, I F=7.8 A,
T j=25 C
V R=400 V, I F=I S,
di F/dt =100 A/s
1)
2)
3)
4)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5)
ISDID, di/dt200A/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev.2.1
page 3
2012-01-09
IPA60R250CP
1 Power dissipation
P tot=f(T C)
35
limited by on-state
resistance
30
1 s
10 s
25
100 s
20
I D [A]
P tot [W]
101
1 ms
15
10 ms
10
10
DC
10-1
0
0
40
80
120
100
160
101
T C [C]
102
103
V DS [V]
Z thJC=f(t P)
parameter: V GS
101
60
20 V
0.5
12 V
45
100
10V
0.2
Z thJC [K/W]
8V
I D [A]
0.1
0.05
30
6V
0.02
10-1
0.01
5.5 V
15
5V
single pulse
4.5 V
10
-2
10-5
0
10-4
10-3
10-2
10-1
100
101
Rev.2.1
10
15
20
V DS [V]
t p [s]
page 4
2012-01-09
IPA60R250CP
5 Typ. output characteristics
parameter: V GS
parameter: V GS
25
1.6
20 V
12 V
6V
20
1.4
8V
6.5 V
10 V
5.5 V
1.2
R DS(on) []
I D [A]
15
5V
10
6V
7V
0.8
10 V
5.5 V
4.5 V
5V
5
0.6
0
0
10
15
0.4
20
10
15
V DS [V]
20
25
30
I D [A]
0.8
C 25
50
0.6
I D [A]
R DS(on) []
40
0.4
30
C 150
98 %
typ
20
0.2
10
0
-60
-20
20
60
100
140
180
T j [C]
Rev.2.1
10
V GS [V]
page 5
2012-01-09
IPA60R250CP
9 Typ. gate charge
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
120 V
25 C, 98%
8
400 V
150 C, 98%
101
25 C
150 C
I F [A]
V GS [V]
4
100
10-1
0
0
10
15
20
25
30
0.5
Q gate [nC]
1.5
V SD [V]
11 Avalanche energy
350
700
300
660
V BR(DSS) [V]
E AS [mJ]
250
200
150
100
620
580
50
540
20
60
100
140
180
Rev.2.1
-60
-20
20
60
100
140
180
T j [C]
T j [C]
page 6
2012-01-09
IPA60R250CP
13 Typ. capacitances
105
10
104
Ciss
C [pF]
E oss [J]
103
102
4
Coss
101
Crss
100
0
0
100
200
300
400
500
Rev.2.1
100
200
300
400
500
600
V DS [V]
V DS [V]
page 7
2012-01-09
IPA60R250CP
Definition of diode switching characteristics
Rev.2.1
page 8
2012-01-09
IPA60R250CP
PG-TO220-3-31;-3-111: Outline/ Fully isolated package (2500VAC; 1 minute)
Dimensions in mm/inches
Rev.2.1
page 9
2012-01-09
IPA60R250CP
Published by
Infineon Technologies AG
81726 Munich, Germany
2007 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.1
page 10
2012-01-09