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IPA60R250CP

CoolMOS Power Transistor

Product Summary

Features

V DS @ Tj,max

Lowest figure-of-merit R ONxQg

650

0.250

R DS(on),max@T j= 25C

Ultra low gate charge

Q g,typ

6.6

26

nC

Extreme dv/dt rated


High peak current capability
Qualified according to JEDEC1) for target applications

PG-TO220 FP

Pb-free lead plating; RoHS compliant


CoolMOS CP is designed for:
Hard switching SMPS topologies

Type

Package

Marking

IPA60R250CP

PG-TO220FP

6R250P
6R299P

Maximum ratings, at T j=25 C, unless otherwise specified


Parameter

Symbol Conditions

Continuous drain current 2)

ID

Value

T C=25 C

12

T C=100 C

Pulsed drain current3)

I D,pulse

T C=25 C

40

Avalanche energy, single pulse

E AS

I D=5.2 A, V DD=50 V

345

Avalanche energy, repetitive t AR3),4)

E AR

I D=5.2 A, V DD=50 V

0.52

Avalanche current, repetitive t AR3),4)

I AR

MOSFET dv /dt ruggedness

dv /dt

Gate source voltage

V GS

Power dissipation

P tot

Operating and storage temperature

T j, T stg

Mounting torque

Rev.2.1

Unit
A

mJ

5.2

V DS=0...480 V

50

V/ns

static

20

AC (f >1 Hz)

30

T C=25 C

33

-55 ... 150

M2.5 screws

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50

Ncm

2012-01-09

IPA60R250CP
Maximum ratings, at T j=25 C, unless otherwise specified
Parameter

Symbol Conditions

Continuous diode forward current 2)

IS

Diode pulse current 3)

I S,pulse

Reverse diode dv /dt 5)

dv /dt

Parameter

Symbol Conditions

Value

Unit

12

T C=25 C

40
15

V/ns

Values

Unit

min.

typ.

max.

3.75

Thermal characteristics
Thermal resistance, junction - case

R thJC

Thermal resistance, junction ambient

R thJA

leaded

80

Soldering temperature,
wavesoldering only allowed at leads

T sold

1.6 mm (0.063 in.)


from case for 10 s

260

K/W

Electrical characteristics, at T j=25 C, unless otherwise specified


Static characteristics
Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 A

600

Gate threshold voltage

V GS(th)

V DS=V GS, I D=0,52 mA

2.5

3.5

Zero gate voltage drain current

I DSS

V DS=600 V, V GS=0 V,
T j=25 C

V DS=600 V, V GS=0 V,
T j=150 C

10

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

nA

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=7.8 A,
T j=25 C

0.22

0.25

V GS=10 V, I D=7.8 A,
T j=150 C

0.59

f =1 MHz, open drain

1.3

Gate resistance

Rev.2.1

RG

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IPA60R250CP
Parameter

Values

Symbol Conditions

Unit

min.

typ.

max.

1300

65

55

150

40

17

110

Dynamic characteristics
Input capacitance

C iss

Output capacitance

C oss

Effective output capacitance, energy


related6)
Effective output capacitance, time
related7)

C o(er)
C o(tr)

V GS=0 V, V DS=100 V,
f =1 MHz

V GS=0 V, V DS=0 V
to 480 V

pF

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

12

Gate to source charge

Q gs

Gate to drain charge

Q gd

Gate charge total

Qg

26

35

Gate plateau voltage

V plateau

0.9

1.2

330

ns

4.5

27

V DD=400 V,
V GS=10 V, I D=7.8 A,
R G=23.1

ns

Gate Charge Characteristics

V DD=400 V, I D=7.8 A,
V GS=0 to 10 V

nC

Reverse Diode
Diode forward voltage

V SD

Reverse recovery time

t rr

Reverse recovery charge

Q rr

Peak reverse recovery current

I rrm

V GS=0 V, I F=7.8 A,
T j=25 C

V R=400 V, I F=I S,
di F/dt =100 A/s

1)

J-STD20 and JESD22

2)

Limited only by maximum temperature

3)

Pulse width t p limited by T j,max

4)

Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.

5)

ISDID, di/dt200A/s, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.

6)

C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

7)

C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev.2.1

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IPA60R250CP
1 Power dissipation

2 Safe operating area

P tot=f(T C)

I D=f(V DS); T C=25 C; D =0


parameter: t p
102

35

limited by on-state
resistance

30

1 s
10 s

25
100 s

20

I D [A]

P tot [W]

101

1 ms

15

10 ms

10

10

DC

10-1

0
0

40

80

120

100

160

101

T C [C]

102

103

V DS [V]

3 Max. transient thermal impedance

4 Typ. output characteristics

Z thJC=f(t P)

I D=f(V DS); T j=25 C

parameter: D=t p/T

parameter: V GS

101

60

20 V
0.5

12 V

45
100

10V

0.2

Z thJC [K/W]

8V

I D [A]

0.1
0.05

30
6V

0.02

10-1
0.01

5.5 V

15

5V

single pulse

4.5 V

10

-2

10-5

0
10-4

10-3

10-2

10-1

100

101

Rev.2.1

10

15

20

V DS [V]

t p [s]

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IPA60R250CP
5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D=f(V DS); T j=150 C

R DS(on)=f(I D); T j=150 C

parameter: V GS

parameter: V GS

25

1.6
20 V
12 V
6V

20

1.4

8V

6.5 V

10 V

5.5 V

1.2

R DS(on) []

I D [A]

15

5V

10

6V
7V

0.8

10 V

5.5 V

4.5 V

5V

5
0.6

0
0

10

15

0.4

20

10

15

V DS [V]

20

25

30

I D [A]

7 Drain-source on-state resistance

8 Typ. transfer characteristics

R DS(on)=f(T j); I D=7.8 A; V GS=10 V

I D=f(V GS); |V DS|>2|I D|R DS(on)max


parameter: T j
60

0.8

C 25

50
0.6

I D [A]

R DS(on) []

40

0.4

30
C 150

98 %

typ

20

0.2
10

0
-60

-20

20

60

100

140

180

T j [C]

Rev.2.1

10

V GS [V]

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IPA60R250CP
9 Typ. gate charge

10 Forward characteristics of reverse diode

V GS=f(Q gate); I D=7.8 A pulsed

I F=f(V SD)

parameter: V DD

parameter: T j
102

10
120 V

25 C, 98%

8
400 V

150 C, 98%

101

25 C
150 C

I F [A]

V GS [V]

4
100

10-1

0
0

10

15

20

25

30

0.5

Q gate [nC]

1.5

V SD [V]

11 Avalanche energy

12 Drain-source breakdown voltage

E AS=f(T j); I D=5.2 A; V DD=50 V

V BR(DSS)=f(T j); I D=0.25 mA

350

700

300
660

V BR(DSS) [V]

E AS [mJ]

250

200

150

100

620

580

50

540
20

60

100

140

180

Rev.2.1

-60

-20

20

60

100

140

180

T j [C]

T j [C]

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IPA60R250CP
13 Typ. capacitances

14 Typ. Coss stored energy

C =f(V DS); V GS=0 V; f =1 MHz

E oss= f(V DS)

105

10

104

Ciss

C [pF]

E oss [J]

103

102

4
Coss

101

Crss

100

0
0

100

200

300

400

500

Rev.2.1

100

200

300

400

500

600

V DS [V]

V DS [V]

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IPA60R250CP
Definition of diode switching characteristics

Rev.2.1

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IPA60R250CP
PG-TO220-3-31;-3-111: Outline/ Fully isolated package (2500VAC; 1 minute)

Dimensions in mm/inches

Rev.2.1

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2012-01-09

IPA60R250CP
Published by
Infineon Technologies AG
81726 Munich, Germany
2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office

(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev.2.1

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2012-01-09

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