2N6027

2N6028
w w w. c e n t r a l s e m i . c o m

SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS

DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028
devices are silicon programmable unijunction transistors,
manufactured in an epoxy molded package, designed for
adjustable (programmable) characteristics such as
Valley Current (IV), Peak Current (IP), and Intrinsic
Standoff Ratio ().

MARKING: FULL PART NUMBER

TO-92 CASE
MAXIMUM RATINGS: (TA=25C)
Gate-Cathode Forward Voltage
Gate-Cathode Reverse Voltage
Gate-Anode Reverse Voltage
Anode-Cathode Voltage
Peak Non-Repetitive Forward Current (t=10s)
Peak Repetitive Forward Current (t=20s, D.C.=1.0%)
Peak Repetitive Forward Current (t=100s, D.C.=1.0%)
DC Forward Anode Current
DC Gate Current
Power Dissipation
Operating Junction Temperature
Storage Temperature

SYMBOL
VGKF
VGKR
VGAR
VAK
ITSM
ITRM
ITRM
IT
IG
PD
TJ
Tstg

ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)

2N6027
SYMBOL
TEST CONDITIONS
MIN MAX
IGAO
VS=40V
10
IGKS
VS=40V
50
IP
VS=10V, RG=1.0M
2.0
IP
VS=10V, RG=10k
5.0
IV
VS=10V, RG=1.0M
50
IV
VS=10V, RG=10k
70
IV
VS=10V, RG=200
1.5
VT
VS=10V, RG=1.0M
0.2
1.6
VT
VF
VO
tr

VS=10V, RG=10k
IF=50mA
VB=20V, CC=0.2F
VB=20V, CC=0.2F

0.2
6.0
-

0.6
1.5
80

40
5.0
40
40
5.0
2.0
1.0
150
50
300
-50 to +100
-55 to +150

2N6028
MIN MAX
10
50
0.15
1.0
25
25
1.0
0.2
0.2
6.0
-

0.6
0.6
1.5
80

UNITS
V
V
V
V
A
A
A
mA
mA
mW
C
C

UNITS
nA
nA
A
A
A
A
mA
V
V
V
V
ns

R2 (4-February 2014)

2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS

TO-92 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Anode
2) Gate
3) Cathode
MARKING:
FULL PART NUMBER

R2 (4-February 2014)
w w w. c e n t r a l s e m i . c o m

2N6027
2N6028
SILICON
PROGRAMMABLE
UNIJUNCTION TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS

R2 (4-February 2014)
w w w. c e n t r a l s e m i . c o m

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Central Semiconductor:
2N6028 2N6027