TM

FQP13N50/FQPF13N50
500V N-Channel MOSFET
General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power
factor correction, electronic lamp ballast based on half
bridge.

12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V

Low gate charge ( typical 45 nC)
Low Crss ( typical 25 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

D
!

G!
G DS

TO-220

TO-220F

GD S

FQP Series

FQPF Series

Absolute Maximum Ratings

Symbol
VDSS
ID

TC = 25C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current

FQP13N50

FQPF13N50

Units
V

12.5

12.5 *

7.9

7.9 *

50

50 *

500

- Continuous (TC = 100C)

IDM

Drain Current

VGSS

Gate-Source Voltage

30

EAS

Single Pulsed Avalanche Energy

(Note 2)

810

mJ

IAR

Avalanche Current

(Note 1)

12.5

EAR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

(Note 1)

17
4.5

-55 to +150

mJ
V/ns
W
W/C
C

300

dv/dt
PD
TJ, TSTG
TL

- Pulsed

(Note 1)

(Note 3)

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

170
1.35

56
0.45

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case

RCS

Thermal Resistance, Case-to-Sink

2002 Fairchild Semiconductor Corporation

FQP13N50
0.74

FQPF13N50
2.23

Units
C/W

0.5

--

C/W

Rev. B, September 2002

FQP13N50/FQPF13N50

QFET

Symbol

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

500

--

--

--

0.48

--

V/C

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
/ TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25C

IDSS
IGSSF
IGSSR

VDS = 500 V, VGS = 0 V

--

--

VDS = 400 V, TC = 125C

--

--

10

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

3.0

--

5.0

--

0.33

0.43

--

10

--

--

1800

2300

pF

--

245

320

pF

--

25

35

pF

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 6.25 A

gFS

Forward Transconductance

VDS = 50 V, ID = 6.25 A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 250 V, ID = 13.4 A,

RG = 25
(Note 4, 5)

VDS = 400 V, ID = 13.4 A,

VGS = 10 V
(Note 4, 5)

--

40

90

ns

--

140

290

ns

--

100

210

ns

--

85

180

ns

--

45

60

nC

--

11

--

nC

--

22

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

12.5

ISM

--

--

50

--

--

1.4

--

290

--

ns

--

2.6

--

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 12.5 A
Drain-Source Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 13.4 A,
dIF / dt = 100 A/s

(Note 4)

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.3mH, IAS = 12.5A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 13.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2002 Fairchild Semiconductor Corporation

Rev. B, September 2002

FQP13N50/FQPF13N50

Electrical Characteristics

FQP13N50/FQPF13N50

Typical Characteristics

VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :

ID , Drain Current [A]

10

ID , Drain Current [A]

10

10

150

25
0

10

-55
Notes :
1. VDS = 50V
2. 250 s Pulse Test

Notes :
1. 250 s Pulse Test
2. TC = 25
-1

-1

10

10

10

10

10

VGS , Gate-Source Voltage [V]

VDS , Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.4

IDR , Reverse Drain Current [A]

RDS(ON) [ ],
Drain-Source On-Resistance

1.2

VGS = 10V

1.0

VGS = 20V

0.8

0.6

0.4

10

10

150

25
Notes :
1. VGS = 0V
2. 250 s Pulse Test

0.2
Note : TJ = 25

0.0

-1

10

20

30

50

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

ID, Drain Current [A]

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature

3500

12

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

3000

VDS = 100V

Ciss
Coss

2000

1500

1000

Notes :
1. VGS = 0 V
2. f = 1 MHz

Crss

500

VGS, Gate-Source Voltage [V]

10

2500

Capacitance [pF]

40

VDS = 250V
VDS = 400V

2
Note : ID = 13.4 A

0
-1
10

10

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2002 Fairchild Semiconductor Corporation

10

15

20

25

30

35

40

45

50

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Rev. B, September 2002

FQP13N50/FQPF13N50

Typical Characteristics

(Continued)

3.0

1.2

RDS(ON) , (Normalized)
Drain-Source On-Resistance

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

2.5

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

150

2.0

1.5

1.0
Notes :
1. VGS = 10 V
2. ID = 6.7 A

0.5

0.0
-100

200

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Operation in This Area

is Limited by R DS(on)

10

Operation in This Area

is Limited by R DS(on)

10

1 ms

10 s
100 s
1 ms
10 ms
100 ms

10 s

ID, Drain Current [A]

100 s

ID, Drain Current [A]

-50

10

10 ms
DC

10

Notes :

10

DC

10

-1

Notes :

10

1. TC = 25 C

1. TC = 25 C

2. TJ = 150 C
3. Single Pulse

2. TJ = 150 C
3. Single Pulse

-1

10

-2

10

10

10

10

10

10

10

10

10

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area

for FQP13N50

Figure 9-2. Maximum Safe Operating Area

for FQPF13N50

15

ID, Drain Current [A]

12

0
25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current

vs. Case Temperature

2002 Fairchild Semiconductor Corporation

Rev. B, September 2002

(Continued)

10

D = 0 .5

0 .2
10

N o te s :
1 . Z J C ( t) = 0 .7 4 / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C ( t)

-1

0 .1
0 .0 5

PDM

0 .0 2

JC

( t) , T h e r m a l R e s p o n s e

FQP13N50/FQPF13N50

Typical Characteristics

0 .0 1

t1

s i n g le p u ls e
10

t2

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

10

D = 0 .5

0 .2
N o te s :
1 . Z J C ( t) = 2 .2 3 /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C ( t)

0 .1
10

0 .0 5

-1

0 .0 2

PDM

0 .0 1

JC

( t) , T h e r m a l R e s p o n s e

Figure 11-1. Transient Thermal Response Curve

for FQP13N50

t1

t2
10

s i n g l e p u ls e

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

for FQPF13N50

2002 Fairchild Semiconductor Corporation

Rev. B, September 2002

FQP13N50/FQPF13N50

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD
DUT

10V
tp

2002 Fairchild Semiconductor Corporation

ID (t)
VDS (t)

VDD
tp

Time

Rev. B, September 2002

FQP13N50/FQPF13N50

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

2002 Fairchild Semiconductor Corporation

Rev. B, September 2002

TO-220
4.50 0.20
2.80 0.10
(3.00)

+0.10

1.30 0.05

18.95MAX.

(3.70)

3.60 0.10

15.90 0.20

1.30 0.10

(8.70)

(1.46)

9.20 0.20

(1.70)

9.90 0.20

1.52 0.10

0.80 0.10
2.54TYP
[2.54 0.20]

10.08 0.30

(1.00)

13.08 0.20

(45

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

2.54TYP
[2.54 0.20]

10.00 0.20

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. B, September 2002

FQP13N50/FQPF13N50

Package Dimensions

(Continued)

3.30 0.10

TO-220F
10.16 0.20

2.54 0.20

3.18 0.10

(7.00)

(1.00x45)

15.87 0.20

15.80 0.20

6.68 0.20

(0.70)

0.80 0.10
)
0

(3

9.75 0.30

MAX1.47

#1
+0.10

0.50 0.05

2.54TYP
[2.54 0.20]

2.76 0.20

2.54TYP
[2.54 0.20]

9.40 0.20

4.70 0.20

0.35 0.10

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. B, September 2002

FQP13N50/FQPF13N50

Package Dimensions

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
FACT
ActiveArray
FACT Quiet Series
Bottomless
FAST
CoolFET
FASTr
CROSSVOLT FRFET
DOME
GlobalOptoisolator
EcoSPARK
GTO
E2CMOSTM
HiSeC
EnSignaTM
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop

ImpliedDisconnect PACMAN
POP
ISOPLANAR
Power247
LittleFET
PowerTrench
MicroFET
QFET
MicroPak
QS
MICROWIRE
QT Optoelectronics
MSX
Quiet Series
MSXPro
RapidConfigure
OCX
RapidConnect
OCXPro
SILENT SWITCHER
OPTOLOGIC
SMART START
OPTOPLANAR

SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I2