Department of Electrical and

Computer Engineering

ECSE-330B Electronic Circuits I

Outline of Chapter 4

1- Intro to MOS Field Effect Transistor (MOSFET)

2- NMOS FET
3- PMOS FET
4- DC Analysis of MOSFET Circuits
5- MOSFET Amplifier
6- MOSFET Small Signal Model
7- MOSFET Integrated Circuits
8- CSA, CGA, CDA
9- CMOS Inverter & MOS Digital Logic
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ECSE-330B Electronic Circuits I

Small Signal Modeling

In response to signal input between
gate and source, vgs, signal current
flows in drain, id

Still to be determined:
- output resistance (ro)
- input resistance
- body terminal

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ECSE-330B Electronic Circuits I

Small Signal Output Resistance

Since the characteristic curve for ID-VDS indicates a
slope when in saturation, there is an output resistance
associated with the drain-source nodes.
ID
Linear over a wide range !
An output resistance can be
calculated for a given VGS-Vt
The Slope is the inverse of the
MOSFET output resistance rO.

I D
ro
VDS

VDS

I D

OP

From
Channel
Length
Modulation
(CLM)

VDS
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ECSE-330B Electronic Circuits I

Output Resistance ro
To derive an
expression for ro:
Start with full ID
equation
Take derivative and
simplify
Plug in the operating
point

iD
ro
vDS
iD = 12 k n

OP

W
(vGS Vt )2 (1 + vDS )
L

W
iD
2
= 12 k n (vGS Vt )
vDS
L
iD
vDS

=
OP

ID
ID
ID
=
=
ID
1
1 + VDS
+ VDS V A + VDS

ro

1
ID
MOSFETs 59

Department of Electrical and

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ECSE-330B Electronic Circuits I

Small Signal Modeling

The slope of the ID-VDS curve
indicates a finite resistance
between the drain and the source.

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Department of Electrical and

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ECSE-330B Electronic Circuits I

The MOSFET T-Model

Source absorption
Theorem

Figure 4.39 Development of the T equivalent-circuit model for the MOSFET. For simplicity, ro has been omitted but can
be added between D and S in the T model of (d).

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Department of Electrical and

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ECSE-330B Electronic Circuits I

The MOSFET T-Model

When input signal (voltage or
current) is applied at source
terminal, use the T-model.
Non-zero signal current
IG=0
flows in source
Input resistance looking
into source is finite when we
do not consider the frequency
response
Need to determine source
How describe source
resistance parameter
input resistance ?

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Department of Electrical and

Computer Engineering

ECSE-330B Electronic Circuits I

Source Resistance for T-model

Find the relationship between
source current and gate-source
voltage. We can identify a V=IR
relationship
Define rs as the input resistance
looking into the source
Can compute: rs = vgs/is
Since is = id, and id = gmvgs,
recognize that rs=1/gm=vgs/is
Source Absorption Theorem
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Department of Electrical and

Computer Engineering

ECSE-330B Electronic Circuits I

The MOSFET T Small Signal Model

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ECSE-330B Electronic Circuits I

The Body Effect Small Signal

Recall that DC Body effect occurs because Body and
Source not always maintained at same potential
The same thing can apply to AC analysis
The body terminal always connected to the most
negative DC power supply;
Body terminal will always be at signal (AC) ground.
The small signal body effect occurs when the source
is not at signal ground.
Result: the body behaves like a second albeit
weaker gate
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Department of Electrical and

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ECSE-330B Electronic Circuits I

Modeling the Small Signal Body Effect

Consider effect of small
changes in VBS on ID:
VBS dependence is in Vt:
Start with full ID expression
Take derivative and simplify

iD
vBS

OP

Vt = Vt 0 +
iD = 12 k n

2 f + VSB 2 f

W
(vGS vt )2 (1 + vDS )
L

iD
i v
W
1

= D t = 2 12 k n (VGS vt )(1 + VDS )( 1) 12 (2 f + vSB ) 2 ( 1)

vBS vt vBS
L

Insert the operating point

1
=
2 2 f + VSB

gm = gm

Body transconductance
g mb = g m

=
2

1
2 f + VSB
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ECSE-330B Electronic Circuits I

Hybrid- Small Signal Model

AC Body effect: another VCCS (dependent on gmb) in

parallel with the one dependent on gm
T model generally not used when modeling Body effect,
regardless of circuit topology
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ECSE-330B Electronic Circuits I

pMOS Small Signal Model

Small signal model for
PMOS is identical to that
for NMOS
Be careful of location of
G, D, and S terminals

DC

DC current flows one way,

signal current flows the other
way

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ECSE-330B Electronic Circuits I

Common Source MOSFET Amplifier

RL

RL' = RD RL
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ECSE-330B Electronic Circuits I

Small Signal Operation

Small signal analysis requires the use of small
signals to be valid
Start with expression for drain current:
W
2
iD = k n (vGS Vt ) (1 + VDS )
L
1
2

Substitute vGS = VGS + vgs, iD = ID + id

Expand quadratic term:
I D + id = 12 k n

(V

GS

W
(VGS + vgs Vt )2 (1 + VDS )
L

+ v gs Vt ) = (VGS Vt ) + v gs
2

= (VGS Vt ) + 2v gs (VGS Vt ) + v gs2

2

v gs2 << 2v gs (VGS Vt )

v gs << 2(VGS Vt )
MOSFETs 70